WO2017107256A1 - 显示面板与薄型晶体管阵列基板 - Google Patents

显示面板与薄型晶体管阵列基板 Download PDF

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Publication number
WO2017107256A1
WO2017107256A1 PCT/CN2016/070602 CN2016070602W WO2017107256A1 WO 2017107256 A1 WO2017107256 A1 WO 2017107256A1 CN 2016070602 W CN2016070602 W CN 2016070602W WO 2017107256 A1 WO2017107256 A1 WO 2017107256A1
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WIPO (PCT)
Prior art keywords
substrate
metal layer
display panel
photoresist spacer
conductive electrode
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PCT/CN2016/070602
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English (en)
French (fr)
Inventor
杜鹏
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深圳市华星光电技术有限公司
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Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US14/906,622 priority Critical patent/US10451945B2/en
Publication of WO2017107256A1 publication Critical patent/WO2017107256A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133388—Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate

Definitions

  • the invention provides a display panel and a thin transistor array substrate, in particular for a thin film transistor liquid crystal display (thin film)
  • a display panel of a transistor-liquid crystal display (TFT-LCD) and a thin transistor array substrate in particular for a thin film transistor liquid crystal display (thin film)
  • TFT-LCD transistor-liquid crystal display
  • color filter In a vertical alignment (VA) mode TFT-LCD panel, color filter (color Filter, CF) is important for the travel of the liquid crystal capacitor and for controlling the deflection of the liquid crystal molecules, but since the connected IC is only connected to the TFT substrate, the transfer plate (transfer) The pad) can transfer the signal of the common electrode of the CF from the TFT substrate to the CF substrate, which is an indispensable structure of the VA mode display panel.
  • the common electrode of CF is through the gold ball at the transfer point (Au Ball) is transferred to the CF substrate.
  • the size of the transfer board is generally large, which will occupy more peripheral wiring space, which is very unfavorable for the existing narrow frame design.
  • seal gold is often used (Au In The method of Seal) is to disperse the gold ball in the sealant, uniformly apply it to the peripheral position of the panel, and transmit the common electrode signal of CF to the CF substrate through a small transfer plate.
  • the difficulty with this approach is that the seal contains conductive material, which cannot be connected to any other signal except the common electrode of CF. Hole) contact, otherwise it will cause short circuit of different signals, so that the panel can not work normally. This problem is exacerbated for panels of the Array Gate Drive Circuit (GOA) architecture. This is because there are many frequency signal lines on the gate side of the GOA circuit.
  • GOA Array Gate Drive Circuit
  • the frequency signal line will overlap with the frame glue, and the frequency signal will also have a large number of vias on the line to connect the frequency signal with the GOA circuit.
  • the seal gold technology used in the panel can cause short-circuiting of the frequency signal in the GOA circuit.
  • FIG. 1 is a schematic diagram of a gate-side peripheral trace of a conventional array gate drive circuit architecture.
  • the frequency signal used by the GOA circuit such as CK1 and CK2 in FIG. More, it requires more space on the gate side. Vias are required on the frequency signal line (contact The hole 10 transmits the frequency signal to the GOA circuit. If these vias 10 are in contact with a gold ball (not shown), it may cause short circuits between the different signals, so that the GOA circuit does not work properly.
  • the GOA circuit 2 is made of the first metal layer 20, and the frequency formed by the via 10 being conducted to the second metal layer 21 is shown. Traces.
  • the insulating layer over the metal trace is etched away by dry etching, and the indium tin oxide electrode 22 connects the metal traces of the different layers.
  • the indium tin oxide electrode 22 is a frequency signal potential. If it is directly in contact with a gold ball (not shown) in the seal, a short circuit occurs between the frequency signal and the common electrode signal of the CF, so that the entire panel does not work normally.
  • the present invention optimizes the existing panel design, combining the arrays currently under development (on Array) photoresist spacer technology, redesigned the peripheral photoresist gap sub-design to solve the problem that the frequency signal lines appearing in the GOA circuit when applying the seal gold method are short-circuited.
  • a display panel includes a first substrate and a second substrate, wherein the first substrate is provided with a thin film transistor; the display panel has a non-display area, and the non-display area includes a metal layer; a via Hole) is located on the first metal layer; at least a portion of a conductive electrode is located in the via hole; a photo spacer (photo spacer, PS) for spacing the first substrate and the second substrate, the photoresist spacer covers the conductive electrode; and a second metal layer electrically connected via the conductive electrode on the via The first metal layer.
  • photo spacer photo spacer, PS
  • the photoresist spacer completely covers the conductive electrode.
  • the photoresist spacer is made of an insulating material.
  • the material of the conductive electrode is indium tin oxide (ITO).
  • the photoresist spacer is used to space the first substrate and the second substrate and a color filter in the via hole.
  • the second metal layer constitutes a frequency signal line.
  • the invention realizes the structure of the sealing gold on the GOA panel, can narrow the size of the panel frame, and further reduce the frame size of the GOA panel, which is in line with the current market development trend.
  • FIG. 1 is a schematic diagram of a gate-side peripheral trace of a panel of a conventional array gate drive circuit architecture
  • Figure 2 is a cross-sectional view of a via of the frequency signal line of Figure 1;
  • FIG. 3 is a schematic diagram showing the layout of a frequency trace according to an embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of a via of the frequency signal line of FIG. 3.
  • FIG. 3 is a schematic diagram showing the layout of frequency traces according to an embodiment of the present invention.
  • the present invention has a frequency signal line CK1' formed on a non-display area of a thin transistor array substrate.
  • the present invention uses a photoresist spacer 30 which is formed on a color filter to properly space the color filter and the thin transistor array substrate.
  • the photoresist spacer 30 is formed on the thin transistor array substrate, not only for appropriately spacing the color filter and the thin transistor array substrate, but also for the GOA circuit 4 connected to the frequency signal line CK1' (Fig. 4)
  • the over via 10' is completely covered, in particular the pattern of the photoresist spacer 30 is completely covered by the indium tin oxide electrode 22' (Fig.
  • the photoresist spacer 30 itself is made of an insulating material, the use of the sealing gold process avoids the contact between the frequency signal line and the gold ball (not shown) in the sealant, preventing short circuit between different signals.
  • the present invention is not limited to the above-described GOA frequency signal line CK', but is applicable to vias of similar structure.
  • the GOA circuit 4 is formed of a first metal layer 20' and is formed by a via 10' to conduct a second metal layer 21'.
  • the insulating layer over the metal trace is etched away by dry etching, and the indium tin oxide electrode 22' is formed in the via 10' and extends beyond the via 10' to The metal traces (i.e., the first and second metal layers 20', 21') are joined.
  • the photoresist spacer 30 not only covers the entire via 10', but also covers the most remote portion of the indium tin oxide electrode 22' extending outward, especially in the position indicated by the dotted line in the figure, to the entire indium oxide.
  • the tin electrodes 22' are all covered.
  • the pattern of the photoresist spacers 30 is larger than the pattern size of the indium tin oxide electrodes 22' at the via holes, so that the entire indium tin oxide electrode 22' can be completely covered.
  • the photoresist spacer 30 itself is insulated and has a large thickness. When the process of sealing gold is used, the photoresist spacer 30 can isolate the frequency signal line from the common electrode signal line of the gold ball and the CF. To prevent them from shorting. In this way, the sealing gold process can be applied to the panel of the GOA structure, which is beneficial to the reduction of the frame size of the GOA panel, and is very advantageous for the design of the narrow frame.
  • the invention realizes the structure of the seal gold on the GOA panel, narrows the size of the panel frame, and further reduces the frame size of the GOA panel, which is in line with the current market development trend.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)

Abstract

一种显示面板包括第一基板和第二基板，第一基板上设置有薄膜晶体管；显示面板具有一非显示区，非显示区包括第一金属层（20'），一第二金属层（21'）形成的一频率信号线，位于第一金属层（20'）上，且包括一过孔（10'）。一导电电极（22'），至少有一部分位于过孔（10'）中，以及一光阻间隙子（30），用于间隔第一基板和第二基板，光阻间隙子（30）覆盖导电电极（22'）。光阻间隙子（30）由绝缘材料所制成，并用于间隔第一基板和第二基板和一彩色滤片，位于过孔（10'）中。解决使用密封金方式时频率信号线之间相互短路的问题。

Description

显示面板与薄型晶体管阵列基板 技术领域
本发明提出一显示面板与薄型晶体管阵列基板，特别是用于薄膜晶体管液晶显示器(thin film transistor-liquid crystal display, TFT-LCD)的显示面板与薄型晶体管阵列基板。
 背景技术
现在的面板设计中，窄边框已经日益流行，窄边框的产品在市场上也具有更强的竞争力。
在垂直排列(vertical alignment, VA)模式的TFT-LCD面板中，彩色滤片(color filter, CF)对于液晶电容的行程，以及控制液晶分子偏转是重要的，但由于所连接的IC只和TFT基板连接，转移板(transfer pad)可以将CF的公共电极的信号由TFT基板传递到CF基板，是VA模式显示面板必不可少的一个结构。通常CF的公共电极是在转移处通过金球（Au Ball）传递到CF基板上，转移板的尺寸一般都比较大，会占用较多的外围走线空间，对现有的窄边框设计是非常不利的。为了减小转移板的尺寸，常会使用密封金(Au in Seal)的方式，就是将金球分散在框胶中，均匀的涂布在面板的周边位置，通过较小的转移板将CF的公共电极信号传递到CF基板上。这种方式的难点在于密封处含有导电物质，除了CF的公共电极之外，不能和任何其他信号的过孔(contact hole)接触，否则将导致不同信号的短路，使面板不能正常工作。对于阵列栅极驱动电路(GOA)架构的面板这个问题更加严重。此是因为GOA电路的栅极侧有很多频率信号线，一般情况下频率信号线都会和框胶重迭，而且频率信号在线也会有大量的过孔将频率信号和GOA电路连接，在窄边框面板使用的密封金技术会导致GOA电路中的频率信号短路的问题。
图1是是传统阵列栅极驱动电路架构的面板栅极侧外围走线的示意图，对于采用了GOA架构的面板来讲，GOA电路所使用的频率信号，如图1中的CK1、CK2，数量较多，在栅极侧需要占用较多的空间。频率信号线上都需要过孔(contact hole)10将频率信号传递到GOA电路中，如果这些过孔10与金球(无图示)接触，则可能导致不同信号之间相互短路，使得GOA电路不能正常工作。
图2是图1中的频率信号线的剖面图，如图2所示，通常GOA电路2都是由第一金属层20制作，通过过孔10导通至第二金属层21所形成的频率走线。在过孔10处，金属走线上方的绝缘层通过干蚀刻被挖开，氧化铟锡电极22将不同层的金属走线连接起来。氧化铟锡电极22上是频率信号电位，如果直接和密封处中的金球(无图示)接触，将会发生频率信号和CF的公共电极信号短路，使得整个面板不能正常工作。
 技术问题
为了解决频率信号相互短路的问题，本发明优化了现有的面板设计，结合现在正在开发中的阵列(on array)光阻间隙子技术，重新设计了外围的光阻间隙子设计，解决GOA电路在应用密封金方式时出现的频率信号线之间相互短路的问题。
 技术解决方案
依据本发明一实施例，提出了一种显示面板包括第一基板和第二基板，所述第一基板上设置有薄膜晶体管；所述显示面板具有一非显示区，所述非显示区包括第一金属层；一过孔(contact hole)，位于所述第一金属层上；一导电电极，至少有一部分位于所述过孔中；一光阻间隙子(photo spacer, PS)用于间隔所述第一基板和所述第二基板，所述光阻间隙子覆盖所述导电电极；以及第二金属层，经由所述过孔上的所述导电电极电连接所述第一金属层。
较佳地，所述光阻间隙子完全覆盖所述导电电极。
较佳地，所述光阻间隙子是由绝缘材料制成。
较佳地，所述导电电极的材料为氧化铟锡(ITO)。
较佳地，所述光阻间隙子用于间隔所述第一基板和所述第二基板和一彩色滤片，位于所述过孔中。
较佳地，所述第二金属层构成一频率信号线。
 有益效果
相较于传统阵列栅极驱动电路架构，本发明在GOA面板上实现密封金的结构，能将面板边框的尺寸缩窄，进一步缩减GOA面板的边框尺寸，符合现在的市场发展趋势。
附图说明
图1是是传统阵列栅极驱动电路架构的面板栅极侧外围走线的示意图；
图2是图1的频率信号线的过孔的剖面图；
图3是依据本发明一实施例的频率走线的布局示意图；以及
图4是图3的频率信号线的过孔的剖面图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本专利申请可用以实施的特定实施例。本专利申请所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本专利申请，而非用以限制本专利申请。
图3是依据本发明一实施例的频率走线的布局示意图，如图3所示，本发明具有频率信号线CK1’，CK2’形成在一薄型晶体管阵列基板的一非显示区。本发明使用了光阻间隙子30，光阻间隙子习用是形成在彩色滤片上以适当间隔彩色滤片和薄型晶体管阵列基板。本发明则是将光阻间隙子30形成在薄型晶体管阵列基板上，不仅用来适当间隔彩色滤片和薄型晶体管阵列基板，同时亦用于将和频率信号线CK1’相连的GOA电路4(图4)上的过孔10’完全覆盖，特别是光阻间隙子30的图案将过孔10’处的氧化铟锡电极22’(图4)全部覆盖。由于光阻间隙子30本身是由绝缘材料制成，因此在使用密封金制程时避免了频率信号线和密封胶中的金球(无图示)相互接触，防止了不同信号之间的短路发生，另外，本发明不仅仅是针对上述GOA频率信号线CK’，而是皆适用于类似结构的过孔。
图4是图3中的频率信号线的剖面示意图，如图4所示，GOA电路4是由第一金属层20’制作，通过过孔10’来导通第二金属层21’所形成的频率信号线和GOA电路4。在过孔10’处，金属走线上方的绝缘层通过干蚀刻被挖开，氧化铟锡电极22’被形成在过孔10’中并延伸至过孔10’之外，以将不同层的金属走线(即第一和第二金属层20’，21’)连接起来。光阻间隙子30不仅将整个过孔10’都全部覆盖，同时亦覆盖氧化铟锡电极22’向外延伸的最远程处，特别是如图中虚线框中标识的位置，以将整个氧化铟锡电极22’都全部覆盖。光阻间隙子30的图案比过孔处的氧化铟锡电极22’的图案尺寸更大，因此可完全覆盖整个氧化铟锡电极22’。光阻间隙子30本身是绝缘的，而且具有较大的厚度，当使用了密封金的制程时，光阻间隙子30就可以将频率信号线与金球和CF的公共电极信号线隔离开来，防止它们发生短路。这样就可以将密封金制程应用到GOA架构的面板上，有利于GOA面板边框尺寸的缩减，对窄边框的设计是非常有利的。
本发明在GOA面板上实现密封金的结构，将面板边框的尺寸缩窄，进一步缩减GOA面板的边框尺寸，符合现在的市场发展趋势。
综上所述，虽然本专利申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本专利申请，本领域的普通技术人员，在不脱离本专利申请的精神和范围内，均可作各种更动与润饰，因此本专利申请的保护范围以权利要求界定的范围为准。

Claims (10)

  1. 一种显示面板，其特征在于，包括：
    第一基板和第二基板，所述第一基板上设置有薄膜晶体管；所述显示面板具有一非显示区，所述非显示区包括：
    第一金属层；
    过孔，位于所述第一金属层上；
    导电电极，至少有一部分位于所述过孔中；
    光阻间隙子，用于间隔所述第一基板和所述第二基板，所述光阻间隙子覆盖所述导电电极；以及
    第二金属层，经由所述过孔上的所述导电电极电连接所述第一金属层；
    其中，所述导电电极完全由一绝缘材料所覆盖。
  2. 一种显示面板，其特征在于，包括：
    第一基板和第二基板，所述第一基板上设置有薄膜晶体管；所述显示面板具有一非显示区，所述非显示区包括：
    第一金属层；
    过孔，位于所述第一金属层上；
    导电电极，至少有一部分位于所述过孔中；
    光阻间隙子，用于间隔所述第一基板和所述第二基板，所述光阻间隙子覆盖所述导电电极；以及
    第二金属层，经由所述过孔上的所述导电电极电连接所述第一金属层。
  3. 如权利要求2所述的显示面板，其特征在于，所述光阻间隙子完全覆盖所述导电电极。
  4. 如权利要求2所述的显示面板，其特征在于，所述光阻间隙子是由绝缘材料制成。
  5. 如权利要求2所述的显示面板，其特征在于，所述导电电极的材料为氧化铟锡。
  6. 如权利要求2所述的显示面板，其特征在于，所述光阻间隙子用于间隔所述第一基板和所述第二基板和一彩色滤片，位于所述过孔中。
  7. 如权利要求2所述的显示面板，其特征在于，所述第二金属层构成一频率信号线。
  8. 一种薄型晶体管阵列基板，具有一非显示区，其特征在于，所述非显示区包括：
    一第一金属层；以及
    一频率信号线由第二金属层所制成，并位于所述第一金属层上；
    一过孔形成在该第一金属层上；
    一氧化铟锡电极，至少有一部分位于所述过孔中，并连接所述第一金属层和所述第二金属层；以及
    一光阻间隙子用于间隔所述薄型晶体管阵列基板和一彩色滤片，至少位于所述过孔中以密封在所述过孔中的所述氧化铟锡电极。
  9. 如权利要求8所述的薄型晶体管阵列基板，其特征在于，所述光阻间隙子的尺寸大于氧化铟锡电极的尺寸。
  10. 如权利要求8所述的薄型晶体管阵列基板，其特征在于，所述光阻间隙子是由绝缘材料制成。
PCT/CN2016/070602 2015-12-24 2016-01-11 显示面板与薄型晶体管阵列基板 WO2017107256A1 (zh)

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