CN207164424U - 阵列基板、显示面板及显示装置 - Google Patents

阵列基板、显示面板及显示装置 Download PDF

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CN207164424U
CN207164424U CN201721277826.8U CN201721277826U CN207164424U CN 207164424 U CN207164424 U CN 207164424U CN 201721277826 U CN201721277826 U CN 201721277826U CN 207164424 U CN207164424 U CN 207164424U
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data wire
array base
base palte
shield portion
conductive
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宋星星
喻琨
李中振
于大永
罗标
王文杰
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Priority to US16/332,645 priority patent/US11480837B2/en
Priority to PCT/CN2018/096655 priority patent/WO2019062297A1/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/1339—Gaskets; Spacers; Sealing of cells
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136218—Shield electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting

Abstract

本实用新型提供一种阵列基板、显示面板及显示装置，其包括数据线和位于数据线上方的遮挡件，该遮挡件包括导电屏蔽部，导电屏蔽部局部覆盖数据线；或者，遮挡件包括填充体，该填充体完全覆盖数据线，且用于填充与覆盖数据线的区域相对应的液晶占据的空间。本实用新型提供的阵列基板，其可以在实现对数据线的屏蔽作用的同时，避免短路现象的发生，从而提高了产品良率。

Description

阵列基板、显示面板及显示装置
技术领域
本实用新型涉及显示技术领域，具体地，涉及一种阵列基板、显示面板及显示装置。
背景技术
目前，在液晶显示器中，对于面板中公共电极的设置有多种情况，其中一种是将公共电极设置在彩膜基板中，还有一种是将公共电极和像素电极都设置于阵列基板上，例如HADS产品的顶层电极用作公共电极。
在现有的阵列基板中，数据线通常容易与位于其上方的金属层发生短路现象(Data Com Short，DCS)，从而降低了产品良率。
实用新型内容
本实用新型旨在至少解决现有技术中存在的技术问题之一，提出了一种阵列基板、显示面板及显示装置，其能够减少甚至避免短路现象的发生，从而提高了产品良率。
为实现本实用新型的目的而提供一种阵列基板，包括数据线和位于所述数据线上方的遮挡件，所述遮挡件包括导电屏蔽部，所述导电屏蔽部局部覆盖所述数据线；或者，
所述遮挡件包括填充体，所述填充体完全覆盖所述数据线，且用于填充与覆盖所述数据线的区域相对应的液晶占据的空间。
优选的，所述导电屏蔽部包括多个第一导电条，且多个所述第一导电条沿所述数据线的延伸方向间隔分布。
优选的，每个所述第一导电条与所述数据线相互垂直。
优选的，所述导电屏蔽部还包括多个第二导电条，多个所述第一导电条和多个所述第二导电条相互交叉形成网格状结构。
优选的，所述遮挡件还包括填充部，所述填充部覆盖所述数据线的未被所述导电屏蔽部覆盖的区域，且所述填充部填充与所述数据线的未被所述导电屏蔽部覆盖的区域相对应的液晶占据的空间。
优选的，所述阵列基板还包括多个像素单元，每个所述像素单元包括公共电极，所述公共电极与所述导电屏蔽部同层设置，且相邻的两个所述像素单元的所述公共电极与位于该相邻的两个所述像素单元的所述公共电极之间的所述导电屏蔽部连为一体。
优选的，每个所述像素单元还包括像素电极，所述像素电极与所述公共电极设置于不同层，且在二者之间设置有钝化层。
优选的，所述填充体所采用的材料包括氮化硅或者有机材料。
优选的，所述填充体的轴向截面为矩形或者等腰梯形。
作为另一个技术方案，本实用新型还提供一种显示面板，包括本实用新型提供的上述阵列基板。
作为另一个技术方案，本实用新型还提供一种显示装置，包括本实用新型提供的上述显示面板。
本实用新型具有以下有益效果：
本实用新型提供的阵列基板、显示面板及显示装置的技术方案中，通过使导电屏蔽部局部覆盖数据线，可以减小风险面积，从而可以减少短路现象的发生；或者，通过借助完全覆盖数据线，且用于填充与覆盖数据线的区域相对应的液晶占据的空间的填充体，避免短路现象的发生，从而提高了产品良率。
附图说明
图1为本实用新型第一实施例提供的阵列基板的局部剖视图；
图2为本实用新型第二实施例提供的阵列基板的局部俯视图；
图3A为本实用新型第三实施例提供的阵列基板的局部俯视图；
图3B为本实用新型第三实施例提供的阵列基板的局部剖视图；
图4为本实用新型第四实施例提供的阵列基板的局部剖视图。
具体实施方式
为使本领域的技术人员更好地理解本实用新型的技术方案，下面结合附图来对本实用新型提供的阵列基板、显示面板及显示装置进行详细描述。
第一实施例
请参阅图1，阵列基板包括数据线5、位于该数据线5上方的公共电极6和与该公共电极6同层设置的遮挡件4，其中，遮挡件4完全覆盖数据线5，用于对数据线5起到屏蔽作用，以避免由数据线5产生的电场会对液晶分子产生一定干扰，造成液晶异常偏转漏光。
由于在上述遮挡件4与数据线5之间的钝化层9存在异物，容易导致数据线5与遮挡件4电导通，从而二者容易发生短路现象(Data Com Short，DCS)，进而降低了产品良率。而且，由于遮挡件4完全覆盖数据线5，这使得风险面积较大，从而短路现象发生概率较大。所谓风险，是指数据线5与遮挡件4发生短路现象的风险。
第二实施例
为了解决上述技术问题，请参阅图2，本实用新型第二实施例提供的阵列基板，其包括数据线5和位于该数据线5上方的遮挡件，该遮挡件包括导电屏蔽部7，该导电屏蔽部7局部覆盖数据线5，这可以减小风险面积(即，导电屏蔽部7与数据线5相对的面积)，从而可以减少短路现象的发生，进而可以提高产品良率。
具体地，上述导电屏蔽部7包括多个第一导电条，且多个第一导电条沿数据线5的延伸方向间隔分布，优选的，每个第一导电条与数据线5相互垂直，以便于加工。
或者，上述导电屏蔽部7还可以包括多个第二导电条，多个第一导电条和多个第二导电条相互交叉形成网格状结构。这同样可以减小风险面积，而且网格状结构的屏蔽效果更佳。
在本实施例中，阵列基板还包括多个像素单元，每个像素单元包括呈板状的公共电极6，该公共电极6与上述导电屏蔽部7同层设置，且相邻的两个像素单元的公共电极6与位于二者之间的导电屏蔽部7连为一体。这样，可以使导电屏蔽部7能够与公共电极6同时制作，从而不会增加工艺步骤。
需要说明的是，在本实施例中，公共电极6呈板状，但是本实用新型并不局限于此，在实际应用中，公共电极6还可以采用例如梳齿状等的其他任意结构。
第三实施例
请一并参阅图3A和图3B，本实施例是对上述第二实施例所做的改进。具体地，在设置上述导电屏蔽部7的基础上，遮挡件还包括填充部13，该填充部13覆盖数据线5的未被导电屏蔽部7覆盖的区域，且填充部13填充与数据线5的未被导电屏蔽部7覆盖的区域相对应的液晶占据的空间。另外，填充部13设置在彩膜基板11上的黑矩阵12与阵列基板的钝化层9之间，可以用作隔垫物使用。
对于导电屏蔽部7的结构为：多个导电条沿数据线5的延伸方向间隔分布，上述填充部13设置在各个相邻的两个导电条之间的间隔区域中。对于导电屏蔽部7的结构为：多个第一导电条和多个第二导电条相互交叉形成网格状结构，上述填充部13设置在网格状结构的镂空区域。
借助填充部13，可以使数据线5的未被导电屏蔽部7覆盖的区域无液晶，从而可以解决改区域存在的因液晶异常偏转导致的漏光现象。
填充部13所采用的材料包括氮化硅或者有机材料等的不良导体材料，该材料与钝化层9所采用的材料相类似，能够很好地避免短路现象的发生。
本实施例提供的阵列基板的其他结构与上述第二实施例相同，在此不再赘述。
第四实施例
请参阅图4，本实用新型第四实施例提供的阵列基板，其与上述第一至第三实施例相比，其区别在于，遮挡件包括填充体8。
具体地，填充体8完全覆盖数据线5，且该填充体8用于填充与覆盖数据线5的区域相对应的液晶占据的空间，从而使该区域无液晶，进而从根源上解决因液晶异常偏转导致的漏光现象。另外，填充体8设置在彩膜基板11上的黑矩阵12与阵列基板的钝化层9之间，可以用作隔垫物使用。
优选的，填充体8所采用的材料包括氮化硅或者有机材料等的不良导体材料，该材料与钝化层9所采用的材料相类似，能够很好地避免短路现象的发生。
在实际应用中，上述填充体8的轴向截面可以为诸如矩形或者等腰梯形等的可以很好地起到支撑作用的形状。
在本实施例中，公共电极15呈梳齿状，但是本实用新型并不局限于此，在实际应用中，公共电极15还可以采用例如板状等的其他任意结构。
每个像素单元还包括像素电极10，该像素电极10与公共电极15设置于不同层，且在二者之间设置有钝化层9。
综上所述，通过使导电屏蔽部7局部覆盖数据线5，可以减小风险面积，从而可以减少短路现象的发生；或者，通过借助完全覆盖数据线5，且用于填充与覆盖数据线5的区域相对应的液晶占据的空间的填充体8，可以避免短路现象的发生，从而提高了产品良率。
作为另一个技术方案，本实用新型实施例还提供一种显示面板，其包括本实用新型上述各个实施例提供的阵列基板。
本实用新型实施例提供的显示面板，其通过采用本实用新型上述各个实施例提供的阵列基板，可以避免短路现象的发生，从而提高了产品良率。
作为另一个技术方案，本实用新型实施例还提供一种显示装置，其包括本实用新型上述实施例提供的显示面板。
本实用新型实施例提供的显示装置，其通过采用本实用新型上述实施例提供的显示面板，可以避免短路现象的发生，从而提高了产品良率。
可以理解的是，以上实施方式仅仅是为了说明本实用新型的原理而采用的示例性实施方式，然而本实用新型并不局限于此。对于本领域内的普通技术人员而言，在不脱离本实用新型的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本实用新型的保护范围。

Claims (11)

1.一种阵列基板，包括数据线和位于所述数据线上方的遮挡件，其特征在于，所述遮挡件包括导电屏蔽部，所述导电屏蔽部局部覆盖所述数据线；或者，
所述遮挡件包括填充体，所述填充体完全覆盖所述数据线，且用于填充与覆盖所述数据线的区域相对应的液晶占据的空间。
2.根据权利要求1所述的阵列基板，其特征在于，所述导电屏蔽部包括多个第一导电条，且多个所述第一导电条沿所述数据线的延伸方向间隔分布。
3.根据权利要求2所述的阵列基板，其特征在于，每个所述第一导电条与所述数据线相互垂直。
4.根据权利要求2所述的阵列基板，其特征在于，所述导电屏蔽部还包括多个第二导电条，多个所述第一导电条和多个所述第二导电条相互交叉形成网格状结构。
5.根据权利要求1-4任意一项所述的阵列基板，其特征在于，所述遮挡件还包括填充部，所述填充部覆盖所述数据线的未被所述导电屏蔽部覆盖的区域，且所述填充部填充所述数据线的未被所述导电屏蔽部覆盖的区域相对应的液晶占据的空间。
6.根据权利要求1-4任意一项所述的阵列基板，其特征在于，所述阵列基板还包括多个像素单元，每个所述像素单元包括公共电极，所述公共电极与所述导电屏蔽部同层设置，且相邻的两个所述像素单元的所述公共电极与位于该相邻的两个所述像素单元的所述公共电极之间的所述导电屏蔽部连为一体。
7.根据权利要求6所述的阵列基板，其特征在于，每个所述像素单元还包括像素电极，所述像素电极与所述公共电极设置于不同层，且在二者之间设置有钝化层。
8.根据权利要求1所述的阵列基板，其特征在于，所述填充体所采用的材料包括氮化硅或者有机材料。
9.根据权利要求1所述的阵列基板，其特征在于，所述填充体的轴向截面为矩形或者等腰梯形。
10.一种显示面板，其特征在于，包括权利要求1-9任意一项所述的阵列基板。
11.一种显示装置，其特征在于，包括权利要求10所述的显示面板。
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