CN104465675A - 薄膜晶体管阵列基板、液晶面板以及液晶显示器 - Google Patents

薄膜晶体管阵列基板、液晶面板以及液晶显示器 Download PDF

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CN104465675A
CN104465675A CN201410856582.3A CN201410856582A CN104465675A CN 104465675 A CN104465675 A CN 104465675A CN 201410856582 A CN201410856582 A CN 201410856582A CN 104465675 A CN104465675 A CN 104465675A
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liquid crystal
film transistor
thin
crystal panel
layer
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CN104465675B (zh
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黄秋平
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明公开了一种薄膜晶体管阵列基板，包括第一基板、位于第一基板上的扫描线和数据线以及由扫描线和数据线交叉限定的像素区域；像素区域包括薄膜晶体管和位于薄膜晶体管上方的像素电极；其中，所述薄膜晶体管与所述像素电极之间设置有一金属遮光层，所述金属遮光层包括相互隔离的第一遮光区、第二遮光区和第三遮光区，所述第一遮光区位于所述源极/漏极与所述像素电极之间，所述像素电极通过所述第一遮光区电连接到所述源极/漏极；所述第二遮光区位于所述有源层上方；所述第三遮光区位于所述扫描线和数据线上方。本发明还公开了一种液晶面板，该液晶面板包括如上的薄膜晶体管阵列基板。本发明还公开了包含前述液晶面板的液晶显示器。

Description

薄膜晶体管阵列基板、液晶面板以及液晶显示器
技术领域
本发明涉及液晶显示技术领域,尤其涉及一种薄膜晶体管阵列基板、液晶面板以及液晶显示器。
背景技术
液晶显示器(Liquid Crystal Display，LCD)，为平面超薄的显示设备，液晶面板是液晶显示器的重要组成部分。
参阅图1-3，常用的液晶面板至少包括相对设置的阵列基板(array substrate)1和滤光基板(color filter substrate)2以及位于阵列基板1和滤光基板2之间的液晶层3。其中，阵列基板1包括第一基板11、位于第一基板11上的扫描线12和数据线13以及由扫描线12和数据线13交叉限定的像素区域14。其中，像素区域14包括薄膜晶体管14a和位于薄膜晶体管14a上方的像素电极14b。薄膜晶体管14a的栅极141与扫描线12电连接、其中的一个源极/漏极142与数据线13电连接，另一个源极/漏极143与像素电极14b电连接。滤光基板2包括第二基板21以及设置于第二基板21上的色阻单元22阵列，色阻单元22之间设置有黑色矩阵23相互间隔。
滤光基板2上的黑色矩阵22对应于阵列基板1上的扫描线12和数据线13以及薄膜晶体管14a的区域，以防止相邻的像素区域14之间漏光，影响显示质量。由于阵列基板1和滤光基板2之间具有间距，因此黑色矩阵22需要覆盖较大面积的区域才能防止漏光，降低了显示器的开口率。
另外，如图1中现有的阵列基板1中，薄膜晶体管14a的有源层144上方没有遮挡物，光线可以照射到该有源层144上，形成光生载流子，降低了显示器的性能。
发明内容
鉴于现有技术存在的不足，本发明提供了一种薄膜晶体管阵列基板，在薄膜晶体管阵列上方设置一金属金属遮光层，其可以代替传统的设置于滤光基板上的黑色矩阵，起到遮光的作用，并且该金属遮光层可以阻挡光线照射到薄膜晶体管的有源层，提高了显示设备的显示品质。
为了实现上述目的，本发明采用了如下的技术方案：
一种薄膜晶体管阵列基板，包括第一基板、位于所述第一基板上的扫描线和数据线以及由扫描线和数据线交叉限定的像素区域；
所述像素区域包括薄膜晶体管和位于薄膜晶体管上方的像素电极；该薄膜晶体管包括：位于所述第一基板上的栅极，所述栅极与所述扫描线电连接；位于所述栅极上的有源层；与所述有源层电连接的源极和漏极，所述源极/漏极的一端与所述数据线电连接，另一端与所述像素电极电连接；
其中，所述薄膜晶体管与所述像素电极之间设置有一金属遮光层，所述金属遮光层包括相互隔离的第一遮光区、第二遮光区和第三遮光区，所述第一遮光区位于所述源极/漏极与所述像素电极之间，所述像素电极通过所述第一遮光区电连接到所述源极/漏极；所述第二遮光区位于所述有源层上方；所述第三遮光区位于所述扫描线和数据线上方。
其中，所述薄膜晶体管上设置有第一绝缘介质层，所述金属遮光层位于所述第一绝缘介质层上，所述第一绝缘介质层中设置有第一过孔，所述第一遮光区通过所述第一过孔连接到所述源极/漏极；所述金属遮光层上设置有第二绝缘介质层，所述像素电极位于所述第二绝缘介质层上，所述第二绝缘介质层中设置有第二过孔，所述像素电极通过所述第二过孔连接到所述第一遮光区。
其中，所述金属遮光层为单层或多层黑色金属材料层。
其中，所述金属材料为钼。
其中，所述栅极上设置有栅极绝缘层，所述源极/漏极以及有源层位于所述栅极绝缘层上。
本发明还提供了一种液晶面板，包括相对设置的阵列基板和滤光基板以及位于阵列基板和滤光基板之间的液晶层，其中，所述阵列基板为如上所述的薄膜晶体管阵列基板，所述滤光基板包括第二基板以及设置于该第二基板上的色阻单元阵列。
其中，所述滤光基板于所述液晶层之间还设置有公共电极层。
其中，所述色阻单元阵列包括红色色阻、绿色色阻和蓝色色阻。
本发明的另一方面是提供一种液晶显示器，包括液晶面板及背光模组，所述液晶面板与所述背光模组相对设置，所述背光模组提供显示光源给所述液晶面板，以使所述液晶面板显示影像，其中，所述液晶面板为如上所述的液晶面板。
相比于现有技术，本发明实施例中提供的薄膜晶体管阵列基板，通过在薄膜晶体管阵列上方设置一金属金属遮光层，代替传统的设置于滤光基板上的黑色矩阵，起到遮光的作用。由于该金属遮光层设置于阵列基板上，可以更好对准需要遮挡的区域且距离需要遮挡的区域更近，因此需要较小的面积(相比于现有技术中黑色矩阵设置于滤光基板上)就可以覆盖需要遮挡的区域，进而像素区域可以获得更高的开口率。另外，该金属遮光层可以阻挡光线照射到薄膜晶体管的有源层，提高了显示设备的显示品质。
附图说明
图1是现有的一种液晶面板的结构示意图。
图2是如图1的液晶面板中的阵列基板的结构图示。
图3是如图1的液晶面板中的滤光基板的结构图示。
图4是本发明实施例提供的液晶面板的结构示意图。
图5是本发明实施例提供的阵列基板的结构剖面图。
图6是本发明实施例提供的阵列基板的结构俯视图。
图7是本发明实施例提供的滤光基板的结构图示。
图8是本发明实施例提供的液晶显示器的结构图示。
具体实施方式
如前所述，本发明的目的是为了改善传统的液晶面板中，用于遮光的黑色矩阵设置于滤光基板上时，由于液晶盒的间距使得黑色矩阵需要覆盖较大面积的区域才能防止漏光，降低显示器的开口率的问题，提供了一种薄膜晶体管阵列基板以及包含该阵列基板的液晶面板，通过在薄膜晶体管阵列上方设置一金属金属遮光层，代替传统的设置于滤光基板上的黑色矩阵，使液晶面板的像素区域可以获得更高的开口率。另外，该金属遮光层可以阻挡光线照射到薄膜晶体管的有源层，提高了显示设备的显示品质。
下面将结合附图以及具体实施例，对本发明实施例中的技术方案进行详细地描述，显然，所描述的实施例仅仅是本发明一部分实例，而不是全部实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护范围。
如图4所示，本实施例提供的液晶面板包括相对设置的阵列基板10和滤光基板20以及位于阵列基板10和滤光基板20之间的液晶层30。滤光基板20与所述液晶层30之间还设置有公共电极层40。
其中，参阅图5和图6，阵列基板10为薄膜晶体管阵列基板，该阵列基板10包括第一基板101、位于所述第一基板101上的扫描线102和数据线103以及由扫描线102和数据线103交叉限定的像素区域104。所述像素区域104包括薄膜晶体管104a和位于薄膜晶体管104a上方的像素电极104b。
具体地，薄膜晶体管104a设置于扫描线102和数据线103交叉点附近。如图5所示的，薄膜晶体管104a包括：位于所述第一基板101上的栅极1041，所述栅极1041与所述扫描线102电连接；位于所述栅极1041上的有源层1042；与所述有源层1042电连接的源极/漏极1043、1044，所述源极/漏极1043、1044的一端与所述数据线103电连接，另一端与所述像素电极104b电连接。进一步地，所述栅极1041上设置有栅极绝缘层108，所述源极/漏极1043、1044以及有源层1042位于所述栅极绝缘层108上。
其中，本实施例提供的阵列基板10中，所述薄膜晶体管104a与所述像素电极104b之间设置有一金属遮光层105，所述金属遮光层105包括相互隔离的第一遮光区1051、第二遮光区1052和第三遮光区1053。如图6所示的，所述第一遮光区1051位于所述源极/漏极1043、1044与所述像素电极104b之间，所述像素电极104b通过所述第一遮光区1051电连接到所述源极/漏极1043、1044；所述第二遮光区1052位于所述有源层1042上方；所述第三遮光区1053位于所述扫描线102和数据线103上方。具体地，如图5所示的，所述薄膜晶体管104a上设置有第一绝缘介质层106，所述金属遮光层105位于所述第一绝缘介质层106上，所述第一绝缘介质层106中设置有第一过孔1061，所述第一遮光区1051通过所述第一过孔1061连接到所述源极/漏极1043、1044；所述金属遮光层105上设置有第二绝缘介质层107，所述像素电极104b位于所述第二绝缘介质层107上，所述第二绝缘介质层107中设置有第二过孔1071，所述像素电极104b通过所述第二过孔1071连接到所述第一遮光区1051。
其中，在制备完成第一绝缘介质层106之后，通过PVD工艺在第一绝缘介质层106上制备得到金属遮光层105，然后通过光刻工艺将金属遮光层105划分为相互隔离的第一遮光区1051、第二遮光区1052和第三遮光区1053。金属遮光层105为单层或多层黑色金属材料层。优选的金属材料为钼。
金属遮光层105覆盖于扫描线102和数据线103以及薄膜晶体管104a等非显示区域的上方，可以起到遮光的作用。相应的该液晶面板中的滤光基板20上可以取消黑色矩阵的工艺。如图7所示，该液晶面板中的滤光基板20包括第二基板201以及设置于该第二基板201上的色阻单元202阵列，所述色阻单元201阵列包括红色色阻202R、绿色色阻202G和蓝色色阻202B。由于该金属遮光层105设置于阵列基板10上，可以更好地对准需要遮挡的区域且距离需要遮挡的区域更近，因此需要较小的面积(相比于现有技术中黑色矩阵设置于滤光基板上)就可以覆盖需要遮挡的区域，进而像素区域104可以获得更高的开口率。
另外，第二遮光区1052位于有源层1042上，可以阻挡光线照射到薄膜晶体管104a的有源层1042，减少光生载流子的产生，使得薄膜晶体管104a的工作状态更加稳定，提高了显示设备的显示品质。
进一步地，像素电极104b与金属遮光层105之间设置有第二绝缘介质层107，像素电极104b通过第二过孔1071仅与第三遮光区1053互相导通，像素电极104b与第一遮光区1051和第二遮光区1052之间绝缘，因此可以设计更大面积的像素电极104b，如图6所示的，像素电极104b可以延伸到第三遮光区1053上方(位于扫描线102和数据线103的上方)，增加了像素区域的面积，进一步提高了开口率。
本实施例还提供了一种液晶显示器，如图8所示，该液晶显示器包括液晶面板100及背光模组200，所述液晶面板100与所述背光模组200相对设置，所述背光模组200提供显示光源给所述液晶面板100，以使所述液晶面板100显示影像。其中，所述液晶面板100采用本实施例前述提供的液晶面板。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (9)

1.一种薄膜晶体管阵列基板，其特征在于，包括第一基板(101)、位于所述第一基板(101)上的扫描线(102)和数据线(103)以及由扫描线(102)和数据线(103)交叉限定的像素区域(104)；
所述像素区域(104)包括薄膜晶体管(104a)和位于薄膜晶体管(104a)上方的像素电极(104b)；该薄膜晶体管(104a)包括：位于所述第一基板(101)上的栅极(1041)，所述栅极(1041)与所述扫描线(102)电连接；位于所述栅极(1041)上的有源层(1042)；与所述有源层(1042)电连接的源极/漏极(1043、1044)，所述源极/漏极(1043、1044)的一端与所述数据线(103)电连接，另一端与所述像素电极(104b)电连接；
其中，所述薄膜晶体管(104a)与所述像素电极(104b)之间设置有一金属遮光层(105)，所述金属遮光层(105)包括相互隔离的第一遮光区(1051)、第二遮光区(1052)和第三遮光区(1053)，所述第一遮光区(1051)位于所述源极/漏极(1043、1044)与所述像素电极(104b)之间，所述像素电极(104b)通过所述第一遮光区(1051)电连接到所述源极/漏极(1043、1044)；所述第二遮光区(1052)位于所述有源层(1042)上方；所述第三遮光区(1053)位于所述扫描线(102)和数据线(103)上方。
2.根据权利要求1所述的薄膜晶体管阵列基板，其特征在于，所述薄膜晶体管(104a)上设置有第一绝缘介质层(106)，所述金属遮光层(105)位于所述第一绝缘介质层(106)上，所述第一绝缘介质层(106)中设置有第一过孔(1061)，所述第一遮光区(1051)通过所述第一过孔(1061)连接到所述源极/漏极(1043、1044)；所述金属遮光层(105)上设置有第二绝缘介质层(107)，所述像素电极(104b)位于所述第二绝缘介质层(107)上，所述第二绝缘介质层(107)中设置有第二过孔(1071)，所述像素电极(104b)通过所述第二过孔(1071)连接到所述第一遮光区(1051)。
3.根据权利要求2所述的薄膜晶体管阵列基板，其特征在于，所述金属遮光层(105)为单层或多层黑色金属材料层。
4.根据权利要求3所述的薄膜晶体管阵列基板，其特征在于，所述金属材料为钼。
5.根据权利要求2所述的薄膜晶体管阵列基板，其特征在于，所述栅极(1041)上设置有栅极绝缘层(108)，所述源极/漏极(1043、1044)以及有源层(1042)位于所述栅极绝缘层(108)上。
6.一种液晶面板，包括相对设置的阵列基板(10)和滤光基板(20)以及位于阵列基板(10)和滤光基板(20)之间的液晶层(30)，其特征在于，所述阵列基板(10)为权利要求1-4任一所述的薄膜晶体管阵列基板，所述滤光基板(20)包括第二基板(201)以及设置于该第二基板(201)上的色阻单元(202)阵列。
7.根据权利要求6所述的液晶面板，其特征在于，所述滤光基板(20)与所述液晶层(30)之间还设置有公共电极层(40)。
8.根据权利要求6所述的液晶面板，其特征在于，所述色阻单元(202)阵列包括红色色阻(202R)、绿色色阻(202G)和蓝色色阻(202B)。
9.一种液晶显示器，包括液晶面板(100)及背光模组(200)，所述液晶面板(100)与所述背光模组(200)相对设置，所述背光模组(200)提供显示光源给所述液晶面板(100)，以使所述液晶面板(100)显示影像，其特征在于，所述液晶面板(100)为权利要求6-8任一所述的液晶面板。
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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097831A (zh) * 2015-06-23 2015-11-25 京东方科技集团股份有限公司 低温多晶硅背板及其制造方法和发光器件
CN105404048A (zh) * 2015-12-17 2016-03-16 武汉华星光电技术有限公司 液晶显示装置
WO2016201729A1 (zh) * 2015-06-18 2016-12-22 深圳市华星光电技术有限公司 一种阵列基板及其制作方法、液晶显示器
CN106855670A (zh) * 2017-02-28 2017-06-16 厦门天马微电子有限公司 阵列基板、显示面板和显示装置
CN106918966A (zh) * 2015-12-24 2017-07-04 三星显示有限公司 显示装置
CN107093618A (zh) * 2017-05-04 2017-08-25 京东方科技集团股份有限公司 像素电路结构及使用其的显示器件
CN107290904A (zh) * 2016-04-04 2017-10-24 三星显示有限公司 显示装置
CN108020971A (zh) * 2017-12-22 2018-05-11 武汉华星光电技术有限公司 阵列基板、液晶面板以及液晶显示装置
CN110082975A (zh) * 2019-04-12 2019-08-02 深圳市华星光电半导体显示技术有限公司 阵列基板以及显示面板
CN110109306A (zh) * 2019-04-25 2019-08-09 武汉华星光电技术有限公司 阵列基板及其制造方法、显示面板
CN110178169A (zh) * 2017-01-19 2019-08-27 夏普株式会社 薄膜晶体管基板、显示面板及显示装置
CN110275333A (zh) * 2018-03-14 2019-09-24 群创光电股份有限公司 显示设备以及其制造方法
WO2020098022A1 (zh) * 2018-11-14 2020-05-22 惠科股份有限公司 一种显示面板的制程方法、显示面板及显示装置
CN111679496A (zh) * 2020-06-11 2020-09-18 Tcl华星光电技术有限公司 背光模组及其制作方法、显示终端
WO2022057024A1 (zh) * 2020-09-15 2022-03-24 信利半导体有限公司 一种显示面板及显示装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10345638B2 (en) * 2017-08-01 2019-07-09 Shenzhen China Star Optoelectronics Technology Co., Ltd Display panel and display device
CN109564916B (zh) * 2018-10-12 2022-06-28 京东方科技集团股份有限公司 用于电子器件的基板、显示装置、制造用于电子器件的基板的方法
CN112859466A (zh) * 2019-11-28 2021-05-28 京东方科技集团股份有限公司 显示基板和显示面板
US11953795B2 (en) 2021-09-29 2024-04-09 Tcl China Star Optoelectronics Technology Co., Ltd. Pixel unit of a display panel and display panel
CN113820883A (zh) * 2021-09-29 2021-12-21 Tcl华星光电技术有限公司 显示面板的像素单元及显示面板
CN114911103B (zh) * 2022-04-22 2024-03-08 广州华星光电半导体显示技术有限公司 阵列基板及液晶面板
CN115494672A (zh) * 2022-09-28 2022-12-20 厦门天马微电子有限公司 显示模组及显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1550826A (zh) * 2003-05-16 2004-12-01 ������������ʽ���� 液晶装置，有源矩阵基板，显示装置以及电子设备
US20050082540A1 (en) * 1999-10-01 2005-04-21 Ryuji Nishikawa Electroluminescence display device
CN101595567A (zh) * 2007-01-10 2009-12-02 索尼株式会社 半导体装置和显示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003289072A (ja) * 2002-03-28 2003-10-10 Sharp Corp 平坦化膜を有する基板及び表示装置用基板、並びにそれら基板の製造方法
JP2004252309A (ja) * 2003-02-21 2004-09-09 Seiko Epson Corp 電気光学パネル及び電子機器
JP4055764B2 (ja) * 2004-01-26 2008-03-05 セイコーエプソン株式会社 電気光学装置及び電子機器
KR100845667B1 (ko) * 2004-05-28 2008-07-11 샤프 가부시키가이샤 액티브 매트릭스 기판, 액티브 매트릭스 기판의 수정 방법, 대향 기판, 액정 표시 장치, 표시장치 및 표시 장치의 수정 방법
CN100464241C (zh) * 2007-07-03 2009-02-25 友达光电股份有限公司 液晶显示器的像素结构及其制造方法
TW200945648A (en) * 2008-04-23 2009-11-01 Ind Tech Res Inst Oganic thin film transistor and pixel and method for manufacturing the same and display panel
BR112012006575A2 (pt) * 2009-10-15 2019-09-24 Sharp Kk painel de tela de cristal líquido, processo para a produção do mesmo, e dispositivo de tela de cristal líquido.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050082540A1 (en) * 1999-10-01 2005-04-21 Ryuji Nishikawa Electroluminescence display device
CN1550826A (zh) * 2003-05-16 2004-12-01 ������������ʽ���� 液晶装置，有源矩阵基板，显示装置以及电子设备
CN101595567A (zh) * 2007-01-10 2009-12-02 索尼株式会社 半导体装置和显示装置

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016201729A1 (zh) * 2015-06-18 2016-12-22 深圳市华星光电技术有限公司 一种阵列基板及其制作方法、液晶显示器
CN105097831B (zh) * 2015-06-23 2019-03-29 京东方科技集团股份有限公司 低温多晶硅背板及其制造方法和发光器件
WO2016206236A1 (zh) * 2015-06-23 2016-12-29 京东方科技集团股份有限公司 低温多晶硅背板及其制造方法和发光器件
CN105097831A (zh) * 2015-06-23 2015-11-25 京东方科技集团股份有限公司 低温多晶硅背板及其制造方法和发光器件
US10347532B2 (en) 2015-06-23 2019-07-09 Boe Technology Group Co., Ltd. Low temperature poly silicon backboard, method for manufacturing the same and light-emitting device
CN105404048A (zh) * 2015-12-17 2016-03-16 武汉华星光电技术有限公司 液晶显示装置
WO2017101204A1 (zh) * 2015-12-17 2017-06-22 武汉华星光电技术有限公司 液晶显示装置
CN106918966A (zh) * 2015-12-24 2017-07-04 三星显示有限公司 显示装置
CN107290904B (zh) * 2016-04-04 2022-02-08 三星显示有限公司 显示装置
CN107290904A (zh) * 2016-04-04 2017-10-24 三星显示有限公司 显示装置
CN110178169A (zh) * 2017-01-19 2019-08-27 夏普株式会社 薄膜晶体管基板、显示面板及显示装置
CN106855670A (zh) * 2017-02-28 2017-06-16 厦门天马微电子有限公司 阵列基板、显示面板和显示装置
CN107093618A (zh) * 2017-05-04 2017-08-25 京东方科技集团股份有限公司 像素电路结构及使用其的显示器件
CN107093618B (zh) * 2017-05-04 2019-12-17 京东方科技集团股份有限公司 像素电路结构及使用其的显示器件
US10553670B2 (en) 2017-05-04 2020-02-04 Boe Technology Group Co., Ltd. Pixel circuit structure and display device using the same
CN108020971A (zh) * 2017-12-22 2018-05-11 武汉华星光电技术有限公司 阵列基板、液晶面板以及液晶显示装置
US11145684B2 (en) 2017-12-22 2021-10-12 Wuhan China Star Optoelectronics Technology Co., Ltd. Array substrate, liquid crystal panel and liquid crystal display device
CN110275333A (zh) * 2018-03-14 2019-09-24 群创光电股份有限公司 显示设备以及其制造方法
WO2020098022A1 (zh) * 2018-11-14 2020-05-22 惠科股份有限公司 一种显示面板的制程方法、显示面板及显示装置
US11112661B2 (en) 2018-11-14 2021-09-07 HKC Corporation Limited Method for manufacturing display panel, display panel, and display device
CN110082975A (zh) * 2019-04-12 2019-08-02 深圳市华星光电半导体显示技术有限公司 阵列基板以及显示面板
CN110109306B (zh) * 2019-04-25 2020-12-08 武汉华星光电技术有限公司 阵列基板及其制造方法、显示面板
CN110109306A (zh) * 2019-04-25 2019-08-09 武汉华星光电技术有限公司 阵列基板及其制造方法、显示面板
US11335711B2 (en) 2019-04-25 2022-05-17 Wuhan China Star Optoelectronics Technology Co., Ltd. Array substrate, manufacturing method thereof, and display panel
CN111679496A (zh) * 2020-06-11 2020-09-18 Tcl华星光电技术有限公司 背光模组及其制作方法、显示终端
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WO2022057024A1 (zh) * 2020-09-15 2022-03-24 信利半导体有限公司 一种显示面板及显示装置

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