WO2020186700A1 - Diode schottky et son procédé de fabrication - Google Patents
Diode schottky et son procédé de fabrication Download PDFInfo
- Publication number
- WO2020186700A1 WO2020186700A1 PCT/CN2019/103911 CN2019103911W WO2020186700A1 WO 2020186700 A1 WO2020186700 A1 WO 2020186700A1 CN 2019103911 W CN2019103911 W CN 2019103911W WO 2020186700 A1 WO2020186700 A1 WO 2020186700A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gallium oxide
- type material
- electrode
- epitaxial layer
- substrate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 107
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 107
- 239000000463 material Substances 0.000 claims abstract description 92
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 239000010410 layer Substances 0.000 claims description 55
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 238000001883 metal evaporation Methods 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 6
- 229910052749 magnesium Inorganic materials 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241001354791 Baliga Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
L'invention concerne une diode Schottky et son procédé de fabrication. La diode Schottky comprend : un substrat d'oxyde de gallium (102) ; une couche épitaxiale d'oxyde de gallium (103) située sur le substrat d'oxyde de gallium (102), un côté de la couche épitaxiale d'oxyde de gallium (103) à l'opposé du substrat d'oxyde de gallium (102) comportant de multiples tranchées ; de multiples structures de matériau de type p (105) situées dans les multiples tranchées ; une première électrode (104) recouvrant les structures de matériau de type p (105) et la couche épitaxiale d'oxyde de gallium (103) ; et une seconde électrode (101) située sur un côté du substrat d'oxyde de gallium (102) à l'opposé de la couche épitaxiale d'oxyde de gallium (103). Une structure d'hétérojonction PN est formée entre les structures de matériau de type p (105) et la couche épitaxiale d'oxyde de gallium (103), de manière à surmonter des difficultés techniques et des coûts élevés dans la formation d'un matériau dopé de type p à partir d'un matériau d'oxyde de gallium pour la fabrication de diodes Schottky à haute performance. De plus, les diodes Schottky fabriquées selon l'invention présentent une faible tension de mise sous tension et une tension de claquage inverse élevée sous une tension élevée et un courant important, ce qui permet d'améliorer la stabilité de fonctionnement des diodes Schottky.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910209930.0 | 2019-03-19 | ||
| CN201910209930.0A CN109920857B (zh) | 2019-03-19 | 2019-03-19 | 一种肖特基二极管及其制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2020186700A1 true WO2020186700A1 (fr) | 2020-09-24 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2019/103911 WO2020186700A1 (fr) | 2019-03-19 | 2019-09-02 | Diode schottky et son procédé de fabrication |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109920857B (fr) |
| WO (1) | WO2020186700A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112820643A (zh) * | 2020-12-28 | 2021-05-18 | 中国电子科技集团公司第十三研究所 | 氧化镓sbd的制备方法及结构 |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109920857B (zh) * | 2019-03-19 | 2021-11-30 | 珠海镓未来科技有限公司 | 一种肖特基二极管及其制备方法 |
| CN110444618B (zh) * | 2019-08-09 | 2021-10-22 | 南京大学 | 基于非晶氧化镓薄膜的日盲紫外探测器及其制备方法 |
| CN111128746B (zh) * | 2019-12-05 | 2022-06-07 | 中国电子科技集团公司第十三研究所 | 肖特基二极管及其制备方法 |
| CN111129122B (zh) * | 2019-12-13 | 2022-05-06 | 合肥中科微电子创新中心有限公司 | 基于氧化镓的异质结半导体结构及其器件 |
| CN111244189B (zh) * | 2020-01-20 | 2022-08-26 | 西安理工大学 | 一种含NiO/SiC异质结的SiC MPS二极管 |
| CN112186032A (zh) * | 2020-10-20 | 2021-01-05 | 西安电子科技大学 | 一种带场板结构的氧化镓结势垒肖特基二极管 |
| CN112614781B (zh) * | 2020-11-30 | 2023-01-17 | 中国电子科技集团公司第十三研究所 | 氧化镓sbd的制备方法及结构 |
| CN113066871A (zh) * | 2021-03-25 | 2021-07-02 | 电子科技大学 | 具有变k介质槽复合终端的氧化镓结势垒肖特基二极管 |
| CN113066870B (zh) * | 2021-03-25 | 2022-05-24 | 电子科技大学 | 一种具有终端结构的氧化镓基结势垒肖特基二极管 |
| CN113964210A (zh) * | 2021-09-13 | 2022-01-21 | 西安电子科技大学 | 一种低开启电压氧化镓功率二极管及其制备方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106415845A (zh) * | 2014-07-22 | 2017-02-15 | Flosfia株式会社 | 结晶性半导体膜和板状体以及半导体装置 |
| CN106887470A (zh) * | 2017-01-23 | 2017-06-23 | 西安电子科技大学 | Ga2O3肖特基二极管器件结构及其制作方法 |
| JP2018078177A (ja) * | 2016-11-09 | 2018-05-17 | Tdk株式会社 | ショットキーバリアダイオード及びこれを備える電子回路 |
| CN109075214A (zh) * | 2016-04-28 | 2018-12-21 | 株式会社田村制作所 | 沟槽mos型肖特基二极管 |
| CN109920857A (zh) * | 2019-03-19 | 2019-06-21 | 南方科技大学 | 一种肖特基二极管及其制备方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6349592B2 (ja) * | 2014-07-22 | 2018-07-04 | 株式会社Flosfia | 半導体装置 |
| WO2018045175A1 (fr) * | 2016-09-01 | 2018-03-08 | Hrl Laboratories, Llc | Transistors verticaux à base d'oxyde de gallium normalement bloqués ayant des couches de blocage d'algan de type p |
| JP7037142B2 (ja) * | 2017-08-10 | 2022-03-16 | 株式会社タムラ製作所 | ダイオード |
-
2019
- 2019-03-19 CN CN201910209930.0A patent/CN109920857B/zh active Active
- 2019-09-02 WO PCT/CN2019/103911 patent/WO2020186700A1/fr active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106415845A (zh) * | 2014-07-22 | 2017-02-15 | Flosfia株式会社 | 结晶性半导体膜和板状体以及半导体装置 |
| CN109075214A (zh) * | 2016-04-28 | 2018-12-21 | 株式会社田村制作所 | 沟槽mos型肖特基二极管 |
| JP2018078177A (ja) * | 2016-11-09 | 2018-05-17 | Tdk株式会社 | ショットキーバリアダイオード及びこれを備える電子回路 |
| CN106887470A (zh) * | 2017-01-23 | 2017-06-23 | 西安电子科技大学 | Ga2O3肖特基二极管器件结构及其制作方法 |
| CN109920857A (zh) * | 2019-03-19 | 2019-06-21 | 南方科技大学 | 一种肖特基二极管及其制备方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112820643A (zh) * | 2020-12-28 | 2021-05-18 | 中国电子科技集团公司第十三研究所 | 氧化镓sbd的制备方法及结构 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109920857A (zh) | 2019-06-21 |
| CN109920857B (zh) | 2021-11-30 |
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