CN111180527A - 一种GaN基PN二极管及其制备方法 - Google Patents
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Abstract
本发明提出一种GaN基PN二极管及其制备方法，所述二极管结构自下而上依次为高掺杂的n+型GaN衬底1、非掺杂GaN层2、p型AlGaN层3、p型AlGaN渐变结构4，其中p型AlGaN层3中Al组分摩尔含量为Al和Ga组分之和的0.2‑0.4；所述p型AlGaN渐变结构4中，Al组分从下而上逐渐减小且减小梯度逐渐增大至所述p型AlGaN渐变结构顶部为GaN层。由于渐变结构的极化效应会引入固定负极化电荷诱导自由空穴的产生，有利于提高掺杂效率，在以相对较低的掺杂浓度实现高的空穴浓度的同时，还可以降低载流子散射概率，提高载流子的迁移率，这会使得PN二极管更易获得高质量的P型欧姆接触以及更大的输出电流。
Description
技术领域
本发明属于半导体器件领域，具体为一种GaN基PN二极管及其制备方法。
背景技术
氮化镓作为第三代半导体材料，具有宽禁带，击穿场强高，散热性好以及自发极化等特性，同时又具备物理化学性质稳定，耐腐蚀，抗辐射等性质，被视为是下一代在高压高频等复杂环境下工作的电子器件的首选材料。由于高耐压及高电子迁移率的材料特性，氮化镓被广泛应用在PN二极管等电力电子器件中。然而，在氮化镓PN结外延生长的过程中，P型区往往是通过在外延生长中引入掺杂元素Mg，再通过退火等方式释放出氢激活P型氮化镓来形成的，而且由于激活效率低下，即使引入大量掺杂元素，想要使P型区的载流子浓度达到很高的程度也非常困难，而且大量的掺杂元素会增大载流子的散射概率，降低迁移率。而在PN二极管中，P型区高的载流子浓度有利于形成良好的欧姆接触，增大输出电流。而现有的技术方案不仅在获得高载流子浓度的P型区时有很大的困难，而且通过提高掺杂元素浓度来提高载流子浓度的方式会使得材料载流子的散射概率增大，不利于器件的输出电流的提高。
发明内容
为解决上述问题，本发明提供一种GaN基PN二极管，所述二极管结构自下而上依次为高掺杂的n+型GaN衬底1、非掺杂GaN层2、p型AlGaN层3、p型AlGaN渐变结构4，其中p型AlGaN层3中Al组分摩尔含量为Al和Ga组分之和的0.2-0.4；所述p型AlGaN渐变结构4中，Al组分从下而上逐渐减小且减小梯度逐渐增大至所述p型AlGaN渐变结构顶部为GaN层。
优选的，所述p型AlGaN渐变结构4至少包括第一渐变层、第二渐变层和第三渐变层；所述第一渐变层、所述第二渐变层和所述第三渐变层中的Al组分摩尔含量分别为Al和Ga组分之和的0.3-0.2、0.1-0.05、0.05-0。
优选的，所述高掺杂的n+型GaN衬底1的厚度为，电子浓度为1018cm-3～1020cm-3。
优选的，所述非掺杂GaN层2的厚度为5μm-10μm，电子浓度为1015cm-3～1017cm-3。
优选的，所述p型AlGaN层3的厚度为400nm-600nm，空穴浓度为1015cm-3～1017cm-3。
基于同样的发明构思，本发明另提供一种GaN基PN二极管制备方法，包括如下步骤
S1：高温清洗高掺杂的n+型GaN衬底1；
S2：温度大于1000℃，反应室压力小于50mBar的条件下，通入NH3作为N源，TMGa作为Ga源，在所述高掺杂的n+型GaN衬底1上外延生长5μm-10μm的非掺杂GaN层2；
S3：通入TMAl气体作为Al源，外延生长400nm-600nm的P型AlGaN层；
S4：将TMAl气体的流量逐渐减小至0，TMGa的气体流量增大，外延生长Al组分逐渐减小，减小梯度逐渐增大的p型渐变AlGaN结构。
优选的，所述S1中清洗方式为在外延系统中，1000℃-1200℃下，H2氛围中清洗5min-20min。
优选的，所述S1中的外延系统为金属有机化学气相沉积(MOCVD)、分子束外延(MBE)或氢化物气相外延(HPVE)。
此结构可在衬底背面蒸镀一层Ti/Al/Ni/Au金属叠层，经退火后形成n型欧姆接触，在渐变层上层蒸镀Ni/Au金属叠层，形成P型欧姆接触，制备成一个氮化镓基的垂直PN二极管。
将PN结的P型氮化镓替换成AlGaN可改变材料的能带结构，增大禁带宽度，使材料的反向击穿电压增大；由于渐变层的极化效应会引入固定负极化电荷诱导自由空穴的产生，有利于提高掺杂效率，在以相对较低的掺杂浓度实现高的空穴浓度的同时，还可以降低载流子散射概率，提高载流子的迁移率，这会使得PN二极管更易获得高质量的P型欧姆接触以及更大的输出电流。
利用渐变AlGaN材料诱导空穴自由载流子的原理如下：
首先，当沿(0001)方向外延生长Al组分渐变AlGaN基材料时，由于AlGaN材料电偶极子强度随着Al组分降低而降低，沿(0001)方向极化偶极子分布；沿(0001)面，随Al组分由高到低变化，会产生负净极化电荷；负净极化电荷可提高材料能带，从而提高施主杂质电离能，降低受主杂质电离能，降低背景电子载流子产生概率同时，促进自由空穴载流子的产生；因此，利用极化效应可以提高P型AlGaN材料的空穴载流子浓度，提高掺杂效率，增大器件的输出电流和击穿电压。
本发明引入AlGaN宽禁带材料，可改变能带结构，增大反向击穿电压；利用极化掺杂可以提高掺杂效率，更容易获得P型材料；极化掺杂可不用掺杂剂(或者用量少)，可以降低载流子散射概率，对保持载流子迁移率有好处。
附图说明
图1为本发明实施例1的GaN基PN二极管；
图2为本发明实施例1的渐变AlGaN层的极化效应图。
n+型GaN衬底1，非掺杂GaN层2，p型AlGaN层3，p型AlGaN渐变结构4
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本发明作进一步的详细说明。
实施例本实施例提供一种垂直GaN基PN二极管及其制备方法
如图1所示，本实例的GaN基PN二极管结构自下而上依次为厚度为9μm的高掺杂的n+型GaN衬底1、非掺杂GaN层2、厚度为450nm的p型AlGaN层3和厚度为50nm的p型AlGaN渐变结构4，其中0≤x≤0.4，n+型GaN衬底1的电子浓度为1018cm-3～1020cm-3，非掺杂GaN层2的电子浓度为1015cm-3～1017cm-3，p型AlGaN层3的空穴浓度为1017cm-3～1018cm-3，p型AlGaN层3中Al组分为0.3，p型AlGaN渐变结构4中，Al组分从靠近p型AlGaN层3到远离p型AlGaN层3逐渐减小，且减小梯度逐渐增大至AlGa1N渐变结构顶部为GaN层。AlxGa1-xN渐变结构4至少包括第一渐变层、第二渐变层和第三渐变层，所述第一渐变层、第二渐变层、第三渐变层中的x分别为0.2，0.1，0.05。
基于同样的发明构思，本实施例还提供一种垂直GaN基PN二极管制备方法，步骤如下：
将n+型氮化镓衬底放置在MOCVD反应腔中，在1150℃高温，H2氛围中清洗衬底10分钟；
在温度大于1000℃，反应室压力小于50mBar的条件下，通入NH3作为N源，TMGa作为Ga源，在n+型GaN衬底上外延生长9μm的非掺杂GaN层；
在上一步的基础上，通入TMAl气体作为Al源,外延生长450nm的P型AlGaN层；
在上一步的基础上，TMAl气体的流量逐渐减小至0，TMGa的气体相应增大，外延生长Al组分渐变的AlxGa1-xN层50nm，完成PN结的外延生长。
以上所述仅是本发明的较佳实施例而已，并非对本发明做任何形式的限制。虽然本发明已以较佳实例揭露如上，然而并非用以限定本发明。任何熟悉本专业的技术人员，在不脱离本发明技术方案范围内，当可利用上述所述的方法及技术内容做出些许的更改或修饰为等同变化的等效实施例，但凡是未脱离本发明技术发案的内容，依据本发明的技术实质对以上实例所做的任何简单修改、等同变化与修饰，仍属于本发明技术方案的范围。
Claims (8)
1.一种GaN基PN二极管，其特征在于：所述二极管结构自下而上依次为高掺杂的n+型GaN衬底、非掺杂GaN层、p型AlGaN层、p型AlGaN渐变结构，其中p型AlGaN层中Al组分摩尔含量为Al和Ga组分之和的0.2-0.4；所述p型AlGaN渐变结构中，Al组分从下而上逐渐减小且减小梯度逐渐增大至所述p型AlGaN渐变结构顶部为GaN层。
2.如权利要求1所述的GaN基PN二极管，其特征在于：所述p型AlGaN渐变结构至少包括第一渐变层、第二渐变层和第三渐变层；所述第一渐变层、所述第二渐变层和所述第三渐变层中的Al组分摩尔含量分别为Al和Ga组分之和的0.3-0.2、0.1-0.05、0.05-0。
3.如权利要求1所述的GaN基PN二极管，其特征在于：所述高掺杂的n+型GaN衬底的厚度为，电子浓度为1018cm-3～1020cm-3。
4.如权利要求1所述的GaN基PN二极管，其特征在于：所述非掺杂GaN层的厚度为5μm-10μm，电子浓度为1015cm-3～1017cm-3。
5.如权利要求1所述的GaN基PN二极管，其特征在于：所述p型AlGaN层的厚度为400nm-600nm，空穴浓度为1015cm-3～1017cm-3。
6.一种GaN基PN二极管制备方法，其特征在于：包括如下步骤
S1：高温清洗高掺杂的n+型GaN衬底；
S2：温度大于1000℃，反应室压力小于50mBar的条件下，通入NH3作为N源，TMGa作为Ga源，在所述高掺杂的n+型GaN衬底上外延生长5μm-10μm的非掺杂GaN层；
S3：通入TMAl气体作为Al源，外延生长400nm-600nm的P型AlGaN层；
S4：将TMAl气体的流量逐渐减小至0，TMGa的气体流量增大，外延生长Al组分逐渐减小，减小梯度逐渐增大的p型渐变AlGaN结构。
7.如权利要求6所述的GaN基PN二极管制备方法，其特征在于：所述S1中清洗方式为在外延系统中，1000℃-1200℃下，H2氛围中清洗5min-20min。
8.如权利要求6所述的GaN基PN二极管制备方法，其特征在于：所述S1中的外延系统为金属有机化学气相沉积、分子束外延或氢化物气相外延。
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111710762A (zh) * | 2020-06-28 | 2020-09-25 | 中国科学院半导体研究所 | 具有p型极化掺杂的III族氮化物光电子器件 |
| CN111769034A (zh) * | 2020-06-04 | 2020-10-13 | 东莞市天域半导体科技有限公司 | 一种渐变式pn结材料的制备方法 |
| CN113790744A (zh) * | 2021-09-10 | 2021-12-14 | 华能新能源股份有限公司 | 一种光探测方法及光探测器 |
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