CN109920857A - 一种肖特基二极管及其制备方法 - Google Patents
一种肖特基二极管及其制备方法 Download PDFInfo
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- CN109920857A CN109920857A CN201910209930.0A CN201910209930A CN109920857A CN 109920857 A CN109920857 A CN 109920857A CN 201910209930 A CN201910209930 A CN 201910209930A CN 109920857 A CN109920857 A CN 109920857A
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- China
- Prior art keywords
- gallium oxide
- epitaxial layer
- type material
- schottky diode
- electrode
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- Granted
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 107
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 107
- 239000000463 material Substances 0.000 claims abstract description 96
- 239000000758 substrate Substances 0.000 claims abstract description 52
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 238000001883 metal evaporation Methods 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000011777 magnesium Substances 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 229910052749 magnesium Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- 241001354791 Baliga Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- 238000003877 atomic layer epitaxy Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN201910209930.0A CN109920857B (zh) | 2019-03-19 | 2019-03-19 | 一种肖特基二极管及其制备方法 |
PCT/CN2019/103911 WO2020186700A1 (zh) | 2019-03-19 | 2019-09-02 | 肖特基二极管及其制备方法 |
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CN201910209930.0A CN109920857B (zh) | 2019-03-19 | 2019-03-19 | 一种肖特基二极管及其制备方法 |
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CN109920857A true CN109920857A (zh) | 2019-06-21 |
CN109920857B CN109920857B (zh) | 2021-11-30 |
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CN (1) | CN109920857B (zh) |
WO (1) | WO2020186700A1 (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110444618A (zh) * | 2019-08-09 | 2019-11-12 | 南京大学 | 基于非晶氧化镓薄膜的日盲紫外探测器及其制备方法 |
CN111129122A (zh) * | 2019-12-13 | 2020-05-08 | 中国科学技术大学 | 基于氧化镓的异质结半导体结构及其器件 |
CN111128746A (zh) * | 2019-12-05 | 2020-05-08 | 中国电子科技集团公司第十三研究所 | 肖特基二极管及其制备方法 |
CN111244189A (zh) * | 2020-01-20 | 2020-06-05 | 西安理工大学 | 一种含NiO/SiC异质结的SiC MPS二极管 |
WO2020186700A1 (zh) * | 2019-03-19 | 2020-09-24 | 南方科技大学 | 肖特基二极管及其制备方法 |
CN112186032A (zh) * | 2020-10-20 | 2021-01-05 | 西安电子科技大学 | 一种带场板结构的氧化镓结势垒肖特基二极管 |
CN112614781A (zh) * | 2020-11-30 | 2021-04-06 | 中国电子科技集团公司第十三研究所 | 氧化镓sbd的制备方法及结构 |
CN113066871A (zh) * | 2021-03-25 | 2021-07-02 | 电子科技大学 | 具有变k介质槽复合终端的氧化镓结势垒肖特基二极管 |
CN113066870A (zh) * | 2021-03-25 | 2021-07-02 | 电子科技大学 | 一种具有终端结构的氧化镓基结势垒肖特基二极管 |
CN113964210A (zh) * | 2021-09-13 | 2022-01-21 | 西安电子科技大学 | 一种低开启电压氧化镓功率二极管及其制备方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112820643B (zh) * | 2020-12-28 | 2022-11-08 | 中国电子科技集团公司第十三研究所 | 氧化镓sbd的制备方法及结构 |
Citations (7)
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JP2016025256A (ja) * | 2014-07-22 | 2016-02-08 | 株式会社Flosfia | 半導体装置 |
CN106415845A (zh) * | 2014-07-22 | 2017-02-15 | Flosfia株式会社 | 结晶性半导体膜和板状体以及半导体装置 |
CN106887470A (zh) * | 2017-01-23 | 2017-06-23 | 西安电子科技大学 | Ga2O3肖特基二极管器件结构及其制作方法 |
WO2018045175A1 (en) * | 2016-09-01 | 2018-03-08 | Hrl Laboratories, Llc | Normally-off gallium oxide based vertical transistors with p-type algan blocking layers |
JP2018078177A (ja) * | 2016-11-09 | 2018-05-17 | Tdk株式会社 | ショットキーバリアダイオード及びこれを備える電子回路 |
CN109075214A (zh) * | 2016-04-28 | 2018-12-21 | 株式会社田村制作所 | 沟槽mos型肖特基二极管 |
WO2019031204A1 (ja) * | 2017-08-10 | 2019-02-14 | 株式会社タムラ製作所 | ダイオード |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109920857B (zh) * | 2019-03-19 | 2021-11-30 | 珠海镓未来科技有限公司 | 一种肖特基二极管及其制备方法 |
-
2019
- 2019-03-19 CN CN201910209930.0A patent/CN109920857B/zh active Active
- 2019-09-02 WO PCT/CN2019/103911 patent/WO2020186700A1/zh active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016025256A (ja) * | 2014-07-22 | 2016-02-08 | 株式会社Flosfia | 半導体装置 |
CN106415845A (zh) * | 2014-07-22 | 2017-02-15 | Flosfia株式会社 | 结晶性半导体膜和板状体以及半导体装置 |
CN109075214A (zh) * | 2016-04-28 | 2018-12-21 | 株式会社田村制作所 | 沟槽mos型肖特基二极管 |
WO2018045175A1 (en) * | 2016-09-01 | 2018-03-08 | Hrl Laboratories, Llc | Normally-off gallium oxide based vertical transistors with p-type algan blocking layers |
JP2018078177A (ja) * | 2016-11-09 | 2018-05-17 | Tdk株式会社 | ショットキーバリアダイオード及びこれを備える電子回路 |
CN106887470A (zh) * | 2017-01-23 | 2017-06-23 | 西安电子科技大学 | Ga2O3肖特基二极管器件结构及其制作方法 |
WO2019031204A1 (ja) * | 2017-08-10 | 2019-02-14 | 株式会社タムラ製作所 | ダイオード |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020186700A1 (zh) * | 2019-03-19 | 2020-09-24 | 南方科技大学 | 肖特基二极管及其制备方法 |
CN110444618B (zh) * | 2019-08-09 | 2021-10-22 | 南京大学 | 基于非晶氧化镓薄膜的日盲紫外探测器及其制备方法 |
CN110444618A (zh) * | 2019-08-09 | 2019-11-12 | 南京大学 | 基于非晶氧化镓薄膜的日盲紫外探测器及其制备方法 |
CN111128746A (zh) * | 2019-12-05 | 2020-05-08 | 中国电子科技集团公司第十三研究所 | 肖特基二极管及其制备方法 |
CN111128746B (zh) * | 2019-12-05 | 2022-06-07 | 中国电子科技集团公司第十三研究所 | 肖特基二极管及其制备方法 |
CN111129122A (zh) * | 2019-12-13 | 2020-05-08 | 中国科学技术大学 | 基于氧化镓的异质结半导体结构及其器件 |
CN111244189A (zh) * | 2020-01-20 | 2020-06-05 | 西安理工大学 | 一种含NiO/SiC异质结的SiC MPS二极管 |
CN111244189B (zh) * | 2020-01-20 | 2022-08-26 | 西安理工大学 | 一种含NiO/SiC异质结的SiC MPS二极管 |
CN112186032A (zh) * | 2020-10-20 | 2021-01-05 | 西安电子科技大学 | 一种带场板结构的氧化镓结势垒肖特基二极管 |
CN112614781A (zh) * | 2020-11-30 | 2021-04-06 | 中国电子科技集团公司第十三研究所 | 氧化镓sbd的制备方法及结构 |
CN113066871A (zh) * | 2021-03-25 | 2021-07-02 | 电子科技大学 | 具有变k介质槽复合终端的氧化镓结势垒肖特基二极管 |
CN113066870A (zh) * | 2021-03-25 | 2021-07-02 | 电子科技大学 | 一种具有终端结构的氧化镓基结势垒肖特基二极管 |
CN113066870B (zh) * | 2021-03-25 | 2022-05-24 | 电子科技大学 | 一种具有终端结构的氧化镓基结势垒肖特基二极管 |
CN113964210A (zh) * | 2021-09-13 | 2022-01-21 | 西安电子科技大学 | 一种低开启电压氧化镓功率二极管及其制备方法 |
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Publication number | Publication date |
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CN109920857B (zh) | 2021-11-30 |
WO2020186700A1 (zh) | 2020-09-24 |
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Denomination of invention: A Schottky diode and its preparation method Effective date of registration: 20230221 Granted publication date: 20211130 Pledgee: Bank of China Limited Hengqin Guangdong-Macao Deep Cooperation Zone Branch Pledgor: Zhuhai GA Future Technology Co.,Ltd. Registration number: Y2023980033092 |