WO2020184353A1 - Conteneur de stockage de substrat - Google Patents

Conteneur de stockage de substrat Download PDF

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Publication number
WO2020184353A1
WO2020184353A1 PCT/JP2020/009290 JP2020009290W WO2020184353A1 WO 2020184353 A1 WO2020184353 A1 WO 2020184353A1 JP 2020009290 W JP2020009290 W JP 2020009290W WO 2020184353 A1 WO2020184353 A1 WO 2020184353A1
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WO
WIPO (PCT)
Prior art keywords
substrate
storage container
substrate storage
container
container according
Prior art date
Application number
PCT/JP2020/009290
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English (en)
Japanese (ja)
Inventor
秀洋 益子
Original Assignee
秀洋 益子
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 秀洋 益子 filed Critical 秀洋 益子
Priority to KR1020207030561A priority Critical patent/KR102438642B1/ko
Priority to CN202080019173.1A priority patent/CN113544836B/zh
Priority to JP2020514642A priority patent/JP6781998B1/ja
Publication of WO2020184353A1 publication Critical patent/WO2020184353A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67366—Closed carriers characterised by materials, roughness, coatings or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/0001—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor characterised by the choice of material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/17—Component parts, details or accessories; Auxiliary operations
    • B29C45/72—Heating or cooling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C70/00—Shaping composites, i.e. plastics material comprising reinforcements, fillers or preformed parts, e.g. inserts
    • B29C70/04—Shaping composites, i.e. plastics material comprising reinforcements, fillers or preformed parts, e.g. inserts comprising reinforcements only, e.g. self-reinforcing plastics
    • B29C70/06—Fibrous reinforcements only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67359—Closed carriers specially adapted for containing masks, reticles or pellicles

Definitions

  • the present invention relates to a substrate container used for transporting and storing substrates such as silicon wafers and glass substrates used in a semiconductor manufacturing process.
  • LSIs large-scale integrated circuits
  • CPUs central processing units
  • memories storage media
  • substrate transport containers used for transporting substrates such as silicon wafers and glass masks have a history of more than 20 years, and are constantly being developed to meet the demands of the times.
  • the analysis technology has been remarkably improved, and it has become possible to analyze the factors of various problems occurring on these substrates.
  • Silicon wafers (bare wafers), which are materials for making storage media such as integrated circuits (ICs) and memories, are made by slicing a single crystal silicon material called an ingot at a wafer manufacturing company and polishing it.
  • FOSB Front Opening Shipping Box
  • This FOSB houses a silicon wafer inside, it has excellent dimensional stability and rigidity, suppresses the generation of outgas, elutes less metal ions, and generates less particles (dust that cannot be seen with the naked eye). Must be.
  • thermoplastic resins such as high-purity treated polycarbonate resin, polybutylene terephthalate resin, and polyetheretherketone, which are low in elution ions and metals, are used as the material of FOSB.
  • the FOUP6 is a carrier container for transporting and storing wafers, and the bareware contained in the FOUP6 is converted into an IC or a memory through many semiconductor manufacturing processes.
  • the FOUP6 is required to have rigidity to move between machines in the factory by running on the ceiling, and is required to have a conductive or antistatic function in order to prevent electrostatic breakdown of the circuit formed on the wafer. ing.
  • the current mainstream of FOUP6 is a polycarbonate resin mixed with a conductive filler such as carbon fiber that imparts conductivity.
  • the wafer on which the IC circuit was formed at the IC production factory is transferred from FOUP to FOSB again, and it is a specialized factory for performing dicing, chip mounting, circuit check, and packaging, which are the post-processes of semiconductor manufacturing. Will be transferred to.
  • the semiconductor-related substrate transport container such as FOSB and FOUP described above is made of a high-purity polycarbonate resin (insulator) or the like, static electricity is likely to be generated, and the charging voltage due to static electricity may exceed 6 KV. possible.
  • insulator polycarbonate resin
  • static electricity is likely to be generated, and the charging voltage due to static electricity may exceed 6 KV. possible.
  • antistatic measures such as antistatic and imparting conductivity to semiconductor-related substrate transport containers such as FOSB and FOUP.
  • reliable conductivity is required by semiconductor manufacturers, and the surface resistance value of semiconductor-related substrate transport containers is ideally required to be 10 4 to 10 9 ⁇ .
  • conductive polycarbonate carbon-blended polycarbonate
  • black carbon or carbon nanotubes are mixed with polycarbonate to give conductivity, and electric charges can be instantly dissipated when grounded.
  • Conductive polycarbonate is widely used as a material suitable for transporting and storing wafers because it has strength and generates little outgas (see, for example, Non-Patent Document 1).
  • antistatic ABS resin is also used. Since the polymer itself has antistatic properties, the antistatic ABS resin has a permanent and stable antistatic effect. In addition, since it generates less outgas, it is suitable for transporting and storing wafers, and is used for molding chip trays and the like (see, for example, Non-Patent Document 1).
  • the substrate transport container such as FOSB and FOUP6 shown in FIG. 6 is required to have a "viewing window 6a" for visually confirming the state of the wafer housed inside from the outside. Therefore, in order to satisfy the conductivity of the substrate transport container, all the components thereof cannot be made of a thermoplastic resin mixed with carbon. That is, at present, a resin that satisfies the required level of conductivity and has transparency cannot be realized except by coating. For example, countermeasures against static electricity in the "view window 6a" of FOUP6 are dealt with by using a transparent resin material coated with an antistatic agent or a conductive material.
  • this kind of coating agent peels off little by little every time it is used or washed, and it does not provide a stable and permanent countermeasure against static electricity in the "view window 6a" and thus the substrate transport container, which is a big problem. It is being viewed.
  • the present invention has been made in view of the above problems, and even if a material in which carbon is mixed with a transparent thermoplastic resin is used, it satisfies the level of conductivity required in the semiconductor manufacturing process and also has transparency. It is an object of the present invention to provide a substrate accommodating container including the components provided.
  • the present invention is a substrate container for transporting or storing a substrate used in a semiconductor manufacturing process, wherein (a) a thermoplastic resin 99.8 to 98.5 wt% and (b) a single-walled carbon nanotube 0.01. It is characterized by having at least one component made of a material containing up to 0.05 wt%.
  • the substrate is a silicon wafer or a glass substrate
  • the thermoplastic resin is at least one of polycarbonate, cycloolefin, polyetherimide, polyetheretherketone, and polyethersulfone. It is preferably composed of one or more resins.
  • the surface resistance value of the material is preferably 1.0 ⁇ 10 10 ⁇ or less.
  • the substrate container according to the present invention is provided with at least one component using a material made of a mixture of 99.95 wt% of polycarbonate and 0.05 wt% of single-walled carbon nanotubes, and the surface resistance value of the material is 1.0 ⁇ 10. It is preferably in the range of 4 to 10 9 ⁇ .
  • the material has a transmittance of 20% or more when it is formed with a thickness of 1 mm.
  • the material is preferably a film layer provided on the surface of the thermoplastic resin layer and formed in a thickness range of 0.01 to 0.05 mm.
  • the film layer is formed on the surface of the thermoplastic resin layer by the film insert molding method, and the surface resistance value of the form layer is in the range of 1.0 ⁇ 10 4 to 10 9 ⁇ .
  • the transmittance is preferably 40% or more.
  • the substrate container is a FOUP (Front Opening Unified Pod) used for transporting and storing a silicon wafer
  • the FOUP includes a container body, a lid, and a bottom plate.
  • the component includes a viewing window formed in the container body and for a worker to visually confirm the state of the wafer housed inside from the outside.
  • the substrate accommodating container is a FOSB (Front Opening Shipping Box) used for transporting and storing a silicon wafer.
  • FOSB Front Opening Shipping Box
  • the substrate accommodating container is an RSP (Reticle Smif Pod) for accommodating a photomask, and the component is formed on the upper lid of the RSP, and a worker can use it. It is preferable to include a viewing window for visually confirming the state of the wafer housed inside from the outside.
  • RSP Reticle Smif Pod
  • the substrate accommodating container is a blanks case for carrying the photomask case glass, and the component includes the upper lid of the blanks case.
  • the substrate containing container according to the present invention it is preferable that all the constituent parts are made of the above-mentioned material.
  • the present invention is a method for molding a component using the above material, which includes (1) a heating step of setting the mold temperature to 160 ° C. or higher before filling the mold cavity with the material, and (2). ) It is characterized by including an injection step of injecting the material into the mold cavity and (3) a cooling step of rapidly cooling the mold temperature to a temperature of 90 ° C. or lower.
  • the substrate container according to the present invention includes at least one component made of a material containing (a) a thermoplastic resin of 99.95 to 99.99 wt% and (b) a single-walled carbon nanotube of 0.01 to 0.05 wt%. ..
  • the substrate container according to the present invention satisfies the level of conductivity required in the semiconductor manufacturing process and also has transparency even if a material in which carbon is mixed with a transparent thermoplastic resin such as polycarbonate is used. It can be provided with the components it has.
  • FIG. 1 is a schematic perspective view of the back side of the FOUP, which is the substrate storage container according to the embodiment of the present invention.
  • 2 (a) and 2 (b) are reference photographic views for explaining the transmittance of the material A constituting the substrate storage container of the same as above.
  • FIG. 3 is an exploded perspective view of the RSP, which is the substrate storage container of the same as above.
  • FIG. 4 is a perspective view of the blanks case, which is the substrate storage container of the same as above.
  • 5 (a) and 5 (b) are cross-sectional views of the materials constituting the substrate transport container according to the modified example of the same embodiment.
  • FIG. 6 is a perspective view of the back side of the conventional FOUP, which is a substrate transport container.
  • FIG. 1 shows a substrate storage container 1 according to the present embodiment, and the substrate housed in the substrate storage container 1 is, for example, a silicon wafer or a glass substrate used in a semiconductor manufacturing process.
  • the substrate container 1 is a substantially box-shaped container called FOUP, which is a carrier for transporting and storing 300 mm wafers used in semiconductor manufacturing factories, and is a front-opening type cassette that holds wafers. It is a body type.
  • a wireless tag called an RF tag that can be read and written is used for the substrate containing container 1, and this wireless tag is stored in the pocket of the FOUP, and the state of each substrate containing container 1 is collectively managed by a computer.
  • the substrate containing container 1 includes a container body 11, a bottom plate 12, and a lid 13.
  • the container body 11 includes a side wall 11a of the substrate containing container 1 and a top wall 11b, and the top wall 11b is formed with a substantially plate-shaped robotic flange 11c as a grip portion used for automatically transporting the substrate containing container 1. Will be done.
  • a bottom plate 12 serving as a positioning member for accurately positioning the substrate storage container 1 is attached to the bottom wall of the container body 11.
  • the bottom plate 12 is formed as a plate-shaped member, and is fixed to the bottom of the container body 11 via bolts or the like.
  • the bottom plate 12 is provided with, for example, various sensing pads and identification holes.
  • a viewing window 11d is formed on the back surface of the container main body 11 for workers to visually check the state of the wafer housed inside from the outside.
  • a card case holder (not shown) that can store a document or tag on which instructions and information for workers are written may be attached.
  • Manual handles 11e for manual handling are attached to the left and right side walls 11a of the container body 11.
  • the left and right inner surfaces of the container body 11 are provided with supporting portions having a plurality of shelves for horizontally gripping the silicon wafers at regular intervals so as to face each other.
  • the lid 13 is a plate-shaped member for closing the opening surface formed on the front surface of the container body 11 so as to be sealable, and prevents gas from entering from the outside of the substrate storage container 1 and is housed inside. Prevents contamination of the wafer.
  • this component is a component using material A made by blending 99.985 wt% of polycarbonate and 0.015 wt% of single-walled carbon nanotubes.
  • This component includes a viewing window 11d formed in the container body 11, and the viewing window 11d has a surface resistance value of 1.0 ⁇ 10 4 to 10 9 ⁇ , which is conductive as required by a semiconductor manufacturer. Since the level is satisfied and the transparency is above a certain level, the operator can visually check and confirm the state of the wafer housed inside from the outside. It is also possible to make all the components of the substrate containing container 1 by injection molding using this material A.
  • the material containing single-walled carbon nanotubes is mixed with the thermoplastic resin in a much smaller blending ratio than the multi-walled carbon nanotubes, the degree of dispersion of the single-walled carbon nanotubes is greatly related to the conductivity. Since it is not an invention relating to the dispersion method, detailed description thereof will be omitted here, but the material A used is a thermoplastic resin in which single-walled carbon nanotubes are uniformly dispersed.
  • the components of the board storage container 1 are, for example, a container body 11, a bottom plate 12, a lid 13, a robotic handle 11c, a viewing window 11d, a manual handle 11e, a side rail, a card case holder, and the like.
  • the thermoplastic resin is transparent and is composed of, for example, at least one resin of polycarbonate, cycloolefin, polyetherimide, polyetheretherketone, and polyethersulfone.
  • the thickness of the material A when used is preferably about 1 mm, and if it is less than 1 mm, sufficient rigidity cannot be obtained, while if it exceeds 1 mm, the permeability decreases.
  • the transmittance is 20% or more. In this case, as shown in FIG. 2B, the material A has a level of transparency at which the internal state can be visually recognized.
  • Carbon nanotubes carbon nanotubes
  • SWCNTs single-walled carbon nanotubes
  • DWCNTs double-walled carbon nanotubes
  • MWCNTs multi-walled carbon nanotubes
  • Single-walled carbon nanotubes are seamless cylindrical materials formed from single-walled graphene. It is known that single-walled carbon nanotubes have very high thermal and electrical conductivity.
  • Multi-walled carbon nanotubes have a structure in which multiple tubes with rounded graphene are concentrically stacked, and many nanocarbon fibers are intertwined. Since the structure of multi-walled carbon nanotubes is more complicated and diverse than that of single-walled carbon nanotubes, the structure cannot be clearly defined. Multi-walled carbon nanotubes are easier to mass-produce than single-walled carbon nanotubes, have a lower cost per unit, and have excellent thermal and chemical stability. That is, the multi-walled carbon nanotubes are different substances from the single-walled carbon nanotubes.
  • Double-walled carbon nanotubes show intermediate characteristics between single-walled nanotubes and multi-walled nanotubes. Double-walled carbon nanotubes are found in single-walled carbon nanotubes, along with useful properties found in multi-walled carbon nanotubes, such as high lifetime and field emission current density, and high stability in chemical, mechanical, and thermal treatments. It also shows the flexibility to be.
  • the numerical range of the weight ratio of single-walled carbon nanotubes of 0.01 to 0.05 wt% includes not only polycarbonate but also other amorphous resins (thermoplastic resins) such as cycloolefin resin and polyetherimide as thermoplastic resins. This is because it is assumed that the case will occur.
  • FIG. 3 shows RSP (Reticle SMIF Pod) 2 used in the semiconductor manufacturing process.
  • RSP2 is a type of substrate storage container 1 for transporting and storing a reticle for creating a circuit pattern like a negative on a silicon wafer and a photomask on which a circuit pattern is formed.
  • RSP2 by using the material A for the part of the viewing window 21a provided in the upper lid 21, it is possible to satisfy the level of conductivity required by the manufacturer as a countermeasure against static electricity and also the level of visibility, from the outside to the inside. You will be able to check the condition of the board.
  • the reticle and photomask are placed on the bottom plate 22.
  • the conventional RSP having conductivity is opaque, and the state of the internal substrate cannot be confirmed from the outside.
  • FIG. 4 is a schematic view of a blanks case 3 used in the semiconductor manufacturing process.
  • a glass substrate mostly artificial quartz glass
  • the blanks case 3 is a photomask case (generally a mask case).
  • the blanks case 3 is composed of an upper lid 31 and a container 32, and by forming at least one component (for example, the upper lid 31) using the material A, the requirement for conductivity is satisfied and the transparency is also satisfied. It becomes the substrate accommodating container 1.
  • the conventional conductive blank case has zero permeability (black), and the state of the internal substrate cannot be confirmed from the outside.
  • the substrate accommodating container 1 is the substrate accommodating container 1 for transporting or storing the substrate used in the semiconductor manufacturing process, and (a) thermoplastic resin 99.99 to 99.95 wt%, and ( b) At least one component using material A (conductive plastic) made of a mixture of 0.01 to 0.05 wt% of single-walled carbon nanotubes is provided.
  • This material A is formed to have a thickness of about 1 mm.
  • the substrate storage container 1 has a conductivity level (10 4 to 10 9 ⁇ surface) required in the semiconductor manufacturing process as a countermeasure against static electricity even if the material A in which carbon is mixed with a transparent thermoplastic resin is used.
  • the substrate accommodating container 1 can prevent electrostatic destruction of the IC substrate, and the state of the wafer accommodating inside can be visually recognized from the outside, and thus the yield of the final product can be improved.
  • the substrate container 1 can be applied as a container for transporting and storing various other semiconductor materials such as sapphire wafers, compound semiconductors, and pellicle.
  • the substrate storage container 1 is not limited to the FOUP, and can naturally be the FOSB used for transporting and storing the silicon wafer described above.
  • the surface resistance value may not reach the desired value.
  • injection molding is a characteristic of injection molding into a mold having a temperature lower than the resin temperature, so that an unnecessary skin layer is formed on the surface layer. The lower the mold temperature, the thicker the skin layer and the higher the surface resistance.
  • a resin containing multi-walled carbon nanotubes which is a conventional product, since the filling ratio of carbon nanotubes to the thermoplastic resin is large, this tendency does not appear so remarkably, but the formation of a skin layer is unavoidable.
  • weldless molding is used to prevent this kind of problem.
  • weldless molding before filling the mold cavity with the resin, the mold temperature is rapidly heated to a temperature equal to or higher than the heat distortion temperature of the resin, and then the resin is injected.
  • thermoplastic resin 99.99 to 99.95 wt% and (b) single layer carbon nanotube 0.01 to 0.05 wt% are mixed in the mold cavity.
  • a heating step of setting the mold temperature to 160 ° C. or higher (which is a thermal deformation temperature) and an injection step of injecting the material into the mold cavity (3) before filling the material. ) Includes a cooling step of rapidly cooling the mold temperature to a temperature of 90 ° C. or lower.
  • the solidification temperature can be accelerated, and not only the weld line can be eliminated, but also warpage, whiskers, cycle shortening, and dimensional defect reduction can be realized.
  • thermoplastic resin 99.99 to 99.95 wt%
  • a single-walled carbon nanotube 0.01 to 0.05 wt% in the substrate container according to this modification is shown in FIG. 5 (a).
  • the film layer 52 is provided on the surface of the thermoplastic resin layer 51 and has a thickness of 0.01 to 0.05 mm. Even in this case, the surface resistance value of the film layer 52 is in the range of 10 4 to 10 9 ⁇ , and the transmittance can be maintained at 40% or more.
  • the molding method of the film layer 52 will be described. Molding by film insert molding in which a material to be the film layer 62 is injected into an injection molding mold in which a thermoplastic resin layer 51 formed of polycarbonate or the like is inserted can be performed.
  • the inserted film layer 52 has a desired surface resistance value, and an effective antistatic effect can be obtained up to a total layer thickness of the thermoplastic resin layer 51 and the film layer 52 of about 2 mm.
  • an adhesive layer may be provided between the thermoplastic resin layer 51 and the film layer 52 to integrate them.
  • the position of the film layer 52 is not limited to the surface shown in FIG. 5A, and the structure is such that the thermoplastic resin layers 51 are provided on both sides of the film layer 52 as shown in FIG. 5B. You can also.
  • Example 1 In Example 1, a mixture of 99.99 wt% polycarbonate resin and 0.01 wt% single-walled carbon nanotubes was used as the resin constituting the substrate container 1 to form a thickness of 1 mm. In Example 2, a mixture of 99.98 wt% polycarbonate resin and 0.02 wt% single-walled carbon nanotubes was used as the resin constituting the substrate container 1 to form a thickness of 1 mm.
  • Comparative Examples 1 to 4 Further, for comparison with Examples 1 and 2 above, as Comparative Example 1, a mixture of 99 wt% polycarbonate resin and 1 wt% single-walled carbon nanotubes was used to form a thickness of 1 mm. As Comparative Example 2, it was formed with a thickness of 1 mm using 100 wt% of polycarbonate resin. As Comparative Example 3, a mixture of 97.5 wt% polycarbonate resin and 2.5 wt% multi-walled carbon nanotubes was used to form a thickness of 1 mm. As Comparative Example 4, a mixture of 90 wt% polycarbonate resin and 10 wt% carbon black was used to form a thickness of 1 mm.
  • thermoplastic resin of Examples 1 and 2 (a) 99.99 to 99.95 wt. % And (b) When a material made of a mixture of 0.01 to 0.05 wt% of single-walled carbon nanotubes is used, the surface resistance value ranges from 10 4 to 10 9 ⁇ , and the transmittance is 20% or more. There is. On the other hand, it can be seen that the resins of Comparative Examples 1 to 4 cannot simultaneously satisfy the range of surface resistance values of 10 4 to 10 9 ⁇ and the permeability of 20% or more.
  • the present invention is not limited to the configuration of the above-described embodiment, and various modifications can be made without changing the gist of the invention.
  • the material A can be applied to open cassettes, photomask cases, chip trays and the like used in semiconductor processes other than FOSB, FOUP, RSP and blanks cases. Needless to say, it can be applied to containers other than the semiconductor manufacturing field, such as the medical field, which require both antistatic measures and permeability at the same time.
  • Substrate storage container 2 RSP 3 Blanks case 11 Container body 11a Side wall 11b Top wall 11c Robotic flange 11d, 21a Peep window 11e Manual handle 12 Bottom plate 13 Lid 31 Top lid 51 Thermoplastic resin layer 52 Film layer

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Abstract

L'invention concerne un conteneur de stockage de substrat 1 qui transporte ou stocke des substrats devant être utilisés dans une étape de production de semi-conducteur, et comporte au moins un composant structurel (par exemple, une fenêtre de visualisation 11d) qui utilise un matériau obtenu en mélangeant (a) 99,99 à 99,95 % en poids d'une résine thermoplastique et (b) 0,01 à 0,05 % en poids de nanotubes de carbone à paroi unique. Avec cette configuration, le conteneur de stockage de substrat 1 peut comprendre un composant structurel ayant une transparence et satisfaisant le niveau de conductivité requis dans un processus de production de semi-conducteur, même si un matériau obtenu par ajout de carbone à une résine thermoplastique transparente telle qu'un polycarbonate est utilisé.
PCT/JP2020/009290 2019-03-08 2020-03-05 Conteneur de stockage de substrat WO2020184353A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020207030561A KR102438642B1 (ko) 2019-03-08 2020-03-05 기판 수용 용기
CN202080019173.1A CN113544836B (zh) 2019-03-08 2020-03-05 基板收纳容器
JP2020514642A JP6781998B1 (ja) 2019-03-08 2020-03-05 基板収容容器

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Application Number Priority Date Filing Date Title
JPPCT/JP2019/009223 2019-03-08
PCT/JP2019/009223 WO2020183511A1 (fr) 2019-03-08 2019-03-08 Contenant de stockage de substrat

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WO2020184353A1 true WO2020184353A1 (fr) 2020-09-17

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PCT/JP2020/009290 WO2020184353A1 (fr) 2019-03-08 2020-03-05 Conteneur de stockage de substrat

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JPWO2020184353A1 (ja) 2021-03-18
KR102438642B1 (ko) 2022-08-31
CN113544836B (zh) 2023-02-28
KR20200133794A (ko) 2020-11-30
JP6781998B1 (ja) 2020-11-11
WO2020183511A1 (fr) 2020-09-17
CN113544836A (zh) 2021-10-22

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