WO2020118768A1 - 可折叠显示面板及其制作方法和可折叠显示装置 - Google Patents

可折叠显示面板及其制作方法和可折叠显示装置 Download PDF

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Publication number
WO2020118768A1
WO2020118768A1 PCT/CN2018/123404 CN2018123404W WO2020118768A1 WO 2020118768 A1 WO2020118768 A1 WO 2020118768A1 CN 2018123404 W CN2018123404 W CN 2018123404W WO 2020118768 A1 WO2020118768 A1 WO 2020118768A1
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Prior art keywords
layer
insulating layer
gate
gate insulating
foldable display
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Ceased
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PCT/CN2018/123404
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English (en)
French (fr)
Inventor
方宏
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/337,439 priority Critical patent/US10804478B2/en
Publication of WO2020118768A1 publication Critical patent/WO2020118768A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/431—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Definitions

  • the present invention relates to the field of display technology, and in particular, to a foldable display panel, a manufacturing method thereof, and a foldable display device.
  • the foldable product may cause the problem of backplane brittleness and the reliability of the product is low.
  • LTPS Low Temperature Poly-silicon
  • An object of the present invention is to provide a foldable display panel, a method for manufacturing the same, and a foldable display device.
  • the foldable display panel improves the display panel by replacing a traditional inorganic insulating layer with a bending-resistant organic insulating layer Bendability;
  • a cross-interconnected metal foil layer is added between the organic insulating layers, thereby improving the bending resistance of the display panel, improving the recoverability after bending, and further enhancing the trust of the product Sex and reliability.
  • the present invention provides a foldable display panel, which includes: a flexible substrate on which a barrier layer, a buffer layer, and a layer are sequentially stacked in a direction away from the flexible substrate An active layer, a gate insulating layer and a gate, a first organic insulating layer is provided on the gate insulating layer and the gate, the first organic insulating layer covers the gate, and A metal foil layer is provided on the first organic insulating layer, and a second organic insulating layer is provided on the metal foil layer; the first organic insulating layer and the second organic insulating layer are made of organic materials;
  • the metal foil in the metal foil layer is a cross-connected network structure.
  • a polyimide layer, a barrier layer, a buffer layer, and a layer are sequentially stacked between the flexible substrate and the first organic insulating layer in a direction away from the flexible substrate
  • the metal foil layer, the first organic insulating layer, the second gate insulating layer and the first gate insulating layer A source electrode and a drain electrode are provided; a flat layer is provided on the second organic insulating layer, an anode layer and a pixel definition layer are provided on the flat layer, and an isolation pillar is provided on the pixel definition layer.
  • the buffer layer includes: a first buffer layer, a second buffer layer, and a third buffer layer stacked in this order in a direction away from the flexible substrate.
  • the first buffer layer is composed of Made of silicon nitride material
  • the second buffer layer is made of silicon oxide material
  • the third buffer layer is made of amorphous silicon material;
  • the thickness of the first buffer layer is 500 angstroms
  • the thickness of the second buffer layer It is 2000-3000 angstroms
  • the thickness of the third buffer layer is 400-500 angstroms.
  • the gate insulating layer includes a first gate insulating layer and a second gate insulating layer, and the gate includes a first gate and a second gate; wherein The first gate insulating layer, the first gate, the second gate insulating layer and the second gate are sequentially stacked in a direction away from the flexible substrate.
  • the first gate insulating layer is made of silicon oxide material, the thickness of the first gate insulating layer is 900-1500 Angstroms; the second gate insulating layer is made of nitrogen Made of siliconized material, the thickness of the second gate insulating layer is 1000-1300 angstroms.
  • a foldable display device including the foldable display panel described above.
  • a method for manufacturing a foldable display panel includes the following steps: (a) providing a flexible substrate; (b) providing a barrier layer on the flexible substrate; (c ) Depositing a silicon nitride layer, a silicon oxide layer and an amorphous silicon layer in sequence on the barrier layer to form a buffer layer; (d) forming an active layer on the buffer layer and The layer undergoes exposure and development, etching and stripping processes to pattern the active layer; (e) a first gate insulating layer is provided on the active layer and the buffer layer, the first gate A polar insulating layer covers the active layer, a first metal layer is deposited on the first gate insulating layer, and the first metal layer is patterned to form a first gate; (f) A second gate insulating layer is provided on the first gate insulating layer and the first gate, the second gate insulating layer covers the first gate, and is on the second gate insulating layer Depositing a second metal layer and patterning
  • the method further includes: in step (g), using a photomask process to form a first via and a second via in the first organic insulating layer.
  • the method further includes: in step (i), using a photomask process and an etching process, the second organic insulating layer, the metal foil layer, and the first A third via and a fourth via are formed in the organic insulating layer, the first gate insulating layer and the second gate insulating layer, the positions of the third via and the fourth via are respectively The positions of the first via and the second via correspond.
  • the method further includes: after step (i), the following steps are included: (i1) filling the third via and the fourth via with a metal material to form separately Source and drain; (i2) coating resin on the second organic insulating layer to form a flat layer, and forming an anode layer and a pixel definition layer on the flat layer, and the anode layer Performing patterning; (i3) opening the pixel definition layer, and providing an isolation pillar in the pixel definition layer.
  • the advantage of the present invention is that the foldable display panel, the manufacturing method and the foldable display device of the present invention improve the foldability of the display panel by replacing the traditional inorganic insulating layer with a bending-resistant organic insulating layer; in addition , Adding a cross-interconnected metal foil layer between the organic insulating layers, so as to improve the bending resistance of the display panel, improve the recoverability after bending, and further improve the reliability and reliability of the product.
  • FIG. 1 is a schematic structural view of a foldable display panel in an embodiment of the invention.
  • FIG. 2 is a schematic diagram of a foldable display device in an embodiment of the invention.
  • FIG. 3 is a flowchart of steps in a method for manufacturing a foldable display panel according to an embodiment of the invention.
  • 4A to 4L are process flowcharts of the method for manufacturing the foldable display panel in the embodiment of the present invention.
  • An embodiment of the present invention provides a foldable display panel. Each will be described in detail below.
  • FIG. 1 is a schematic structural diagram of a foldable display panel according to an embodiment of the present invention.
  • the foldable display panel 100 of the present invention includes: a flexible substrate 110 on which a barrier layer 120, a buffer layer 130, and an active layer 140 are sequentially stacked in a direction away from the flexible substrate 110 1.
  • a gate insulating layer including the first gate insulating layer 151 and the second gate insulating layer 153 and a gate (including the first gate 152 and the second gate 154).
  • the flexible substrate 110 can be formed by coating a polyimide material 112 on a glass substrate 111 and curing it.
  • a corresponding flexible substrate 110 may also be formed by coating polyethylene terephthalate material on the glass substrate 111. Since the polyimide material 112 has the advantages of wide temperature, chemical resistance, high strength, etc., the manufactured substrate has good flexibility. It should be noted that before the foldable display panel 100 is manufactured, the flexible substrate 110 is peeled off from the glass substrate 111.
  • the barrier layer 120 is made of silicon nitride SiNx or silicon dioxide SiO 2 material, or is formed of a stacked material composed of them.
  • the buffer layer 130 includes oxide (for example, silicon oxide, SiOx) and/or nitride (for example, silicon nitride, SiNx).
  • the buffer layer 130 includes a first buffer layer 131, a second buffer layer 132, and a third buffer layer 133 that are sequentially stacked in a direction away from the flexible substrate 110.
  • the first buffer layer 131 is made of silicon nitride SiNx
  • the second buffer layer 132 is made of silicon oxide SiO X material
  • the third buffer layer 133 is made of amorphous silicon a-Si material.
  • the thickness of the first buffer layer 131 is 500 angstroms
  • the thickness of the second buffer layer 132 is 2000-3000 angstroms
  • the thickness of the third buffer layer 133 is 400-500 angstroms.
  • the arrangement of the first buffer layer 131 and the second buffer layer 132 can better buffer the damage to the substrate during the preparation process.
  • the first buffer layer 131 is made of silicon nitride material, which can generate hydrogen element to repair the low-temperature polysilicon layer (that is, the active layer 140 described later) during the preparation of the silicon nitride material, and improve the low temperature The electrical properties of the polysilicon layer.
  • the second buffer layer 132 uses silicon oxide material to improve the stress of the second buffer layer 132 and prevent the second buffer layer 132 from falling off.
  • the active layer 140 uses low temperature polysilicon (low temperature) poly-silicon (LTPS) process is formed on the buffer layer 130.
  • the low-temperature polysilicon process includes an excimer laser annealing (ELA) process.
  • ELA excimer laser annealing
  • the active layer 140 is exposed, developed, etched, and stripped to pattern the active layer 140.
  • the gate insulating layer includes a first gate insulating layer 151 and a second gate insulating layer 153, and the gate also includes a first gate 152 and a second gate 154; wherein The first gate insulating layer 151, the first gate 152, the second gate insulating layer 153, and the second gate 154 are sequentially stacked in a direction away from the flexible substrate 110.
  • the first gate insulating layer 151 is made of silicon oxide material, and the thickness of the first gate insulating layer 151 is 900-1500 angstroms.
  • the second gate insulating layer 153 is made of silicon nitride material, and the thickness of the second gate insulating layer 153 is 1000-1300 angstroms.
  • a first gate insulating layer 151 is provided on the patterned active layer 140 and the buffer layer 130, and the first gate insulating layer 151 covers the patterned active layer 140.
  • the first gate 152 is formed by depositing a first metal layer on the first gate insulating layer 151 and patterning the first metal layer.
  • a second gate insulating layer 153 is provided on the first gate insulating layer 151 and the first gate 152, the second gate insulating layer 153 covers the first gate 152, A second metal layer is deposited on the second gate insulating layer 153, and the second metal layer is patterned to form a second gate 154, and then passes through the first gate 152 and the second gate 154 To build a storage capacitor.
  • the gate insulating layer may be only a single layer of gate insulating layer, and the gate is only a single layer of gate.
  • a first organic insulating layer 161 is provided on the gate insulating layer and the gate.
  • the first organic insulating layer 161 is provided on the second gate insulating layer 153 and the second gate 154.
  • the first organic insulating layer 161 covers the second gate 154, a metal foil layer 162 is provided on the first organic insulating layer 161, and a second organic insulating layer 163 is provided on the metal foil layer 162 . That is, the metal foil layer 162 is provided between the first organic insulating layer 161 and the second organic insulating layer 163.
  • the gate may include only the active layer 140 without the barrier layer 120 and Buffer layer 130.
  • the first organic insulating layer 161 and the second organic insulating layer 163 are made of an organic material resistant to bending and having good flexibility.
  • the first organic insulating layer 161 and the second organic insulating layer 163 replace the inorganic insulating layer in the existing display panel, thereby improving the bending resistance of the foldable display panel 100.
  • the metal foil in the metal foil layer 162 is a cross-connected mesh structure.
  • the metal foil layer 162 is used to improve the folding resistance of the foldable display panel 100 while improving the foldable display panel The recoverability of 100 after bending, thereby improving the reliability and reliability of the product.
  • the metal foil layer 162, the first organic insulating layer 161, the second gate insulating layer 153 and the first gate A source electrode 173 and a drain electrode 174 are provided in the electrode insulating layer 151. Since the second organic insulating layer 163, the metal foil layer 162, the first organic insulating layer 161, the second gate insulating layer 153 and the first gate insulating layer 151 are provided with Three via holes 171 and a fourth via hole 172, and the third via hole 171 and the fourth via hole 172 are conductively processed, for example, filled with a metal material, to form the source electrode 173 and the drain electrode 174, respectively.
  • a flat layer 181 and an anode layer 182 are sequentially stacked on the second organic insulating layer 163 in a direction away from the flexible substrate 110.
  • a flat layer 181 is formed.
  • indium tin oxide ITO or indium zinc oxide IZO is sputtered on the flat layer 181 to form an anode layer 182, and the anode layer 182 is patterned.
  • the anode layer 182 is a transparent conductive film.
  • a pixel definition layer 191 is also provided on the flat layer 181.
  • the pixel definition layer 191 has an opening for exposing a part of the anode layer 182.
  • the pixel definition layer 191 is used to determine the distribution of red sub-pixels, green sub-pixels, and blue sub-pixels (that is, RGB).
  • an organic light-emitting layer (not shown in the figure) is disposed in the opening.
  • a transparent cathode layer (not shown in the figure) parallel to the anode layer 182 through the organic light-emitting layer above the opening, the organic material of the organic light-emitting layer emits light under the pressure difference between the anode layer 182 and the cathode layer provided .
  • the organic light emitting layer generally includes a hole injection layer (HIL), a hole transport layer (HTL), a light emitting layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL), and its structure is based on It is well known to those skilled in the art and is not shown in the drawings.
  • isolation pillars 192 are provided on the pixel defining layer 191 at intervals.
  • the isolation column 192 functions as a support and isolation in the physical space.
  • the foldable display panel 100 can improve the bendability of the display panel by replacing the traditional inorganic insulating layer with a bending-resistant organic insulating layer through the above-mentioned design; in addition, a cross is added between the organic insulating layer layers
  • the interconnected metal foil layer 162 improves the bending resistance of the display panel, improves the recoverability after bending, and further improves the reliability and reliability of the product.
  • FIG. 2 is a schematic structural diagram of a foldable display device according to an embodiment of the invention.
  • the present invention also provides a foldable display device 200.
  • the foldable display device 200 includes the foldable display panel 100 described above.
  • the specific structure of the foldable display panel 100 is as described above, and details are not described herein again.
  • FIG. 3 is a flowchart of steps of a method for manufacturing a foldable display panel according to an embodiment of the present invention.
  • 4A to 4L are process flowcharts of the method for manufacturing the foldable display panel in the embodiment of the present invention.
  • the invention also provides a manufacturing method of the foldable display panel as described above.
  • the specific structure of the foldable display panel 100 is as described above and will not be repeated here.
  • the method includes the following steps:
  • Step S310 Provide a flexible substrate.
  • a specific process for providing a flexible substrate is: coating a polyimide material on a glass substrate to cure to form a polyimide layer. Because the polyimide material has the advantages of wide temperature, chemical resistance, high strength, etc., the resulting substrate has good flexibility.
  • step S311 setting a barrier layer on the flexible substrate, the barrier layer covering the flexible substrate.
  • the barrier layer 120 is made of silicon nitride SiNx or silicon dioxide SiO 2 material, or is formed of a stacked material composed of them.
  • step S312 deposit a silicon nitride layer, a silicon oxide layer, and an amorphous silicon layer on the barrier layer in sequence by a chemical vapor deposition process to form the buffer layer 130.
  • the buffer layer 130 includes oxide (for example, silicon oxide, SiOx) and/or nitride (for example, silicon nitride, SiNx).
  • the buffer layer 130 includes a first buffer layer 131, a second buffer layer 132, and a third buffer layer 133 that are sequentially stacked in a direction away from the flexible substrate 110.
  • the first buffer layer 131 is made of silicon nitride SiNx
  • the second buffer layer 132 is made of silicon oxide SiO X material
  • the third buffer layer 133 is made of amorphous silicon a-Si material.
  • the thickness of the first buffer layer 131 is 500 angstroms
  • the thickness of the second buffer layer 132 is 2000-3000 angstroms
  • the thickness of the third buffer layer 133 is 400-500 angstroms.
  • the arrangement of the first buffer layer 131 and the second buffer layer 132 can better buffer the damage to the substrate during the preparation process.
  • the first buffer layer 131 is made of silicon nitride material, which can generate hydrogen element to repair the low-temperature polysilicon layer (that is, the active layer 140 described later) during the preparation of the silicon nitride material, and improve the low temperature The electrical properties of the polysilicon layer.
  • the second buffer layer 132 uses silicon oxide material to improve the stress of the second buffer layer 132 and prevent the second buffer layer 132 from falling off.
  • step S313 an excimer laser crystallization process is used to form an active layer on the buffer layer, and the active layer is exposed, developed, etched and stripped to form a pattern The active layer.
  • the active layer 140 uses low temperature polysilicon (low temperature) poly-silicon (LTPS) process is formed on the buffer layer 130.
  • the low-temperature polysilicon process includes an excimer laser annealing (ELA) process.
  • ELA excimer laser annealing
  • the active layer 140 is exposed, developed, etched, and stripped to pattern the active layer 140.
  • step S314 a first gate insulating layer is provided on the active layer and the buffer layer, the first gate insulating layer covers the active layer, in the first A first metal layer is deposited on the gate insulating layer, and the first metal layer is patterned to form a first gate.
  • step S315 a second gate insulating layer is provided on the first gate insulating layer and the first gate, the second gate insulating layer covers the first gate , Depositing a second metal layer on the second gate insulating layer, and patterning the second metal layer to form a second gate and construct a storage capacitor.
  • the gate insulating layer includes a first gate insulating layer 151 and a second gate insulating layer 153, and the gate also includes a first gate 152 and a second gate 154; wherein The first gate insulating layer 151, the first gate 152, the second gate insulating layer 153, and the second gate 154 are sequentially stacked in a direction away from the flexible substrate 110.
  • the first gate insulating layer 151 is made of silicon oxide material, and the thickness of the first gate insulating layer 151 is 900-1500 angstroms.
  • the second gate insulating layer 153 is made of silicon nitride material, and the thickness of the second gate insulating layer 153 is 1000-1300 angstroms.
  • step S320 forming a first organic insulating layer on the second gate insulating layer and the second gate through the processes of coating, exposure development, and annealing.
  • the first organic insulating layer 161 is disposed on the second gate insulating layer 153 and the second gate 154.
  • the gate insulating layer may be only a single layer of gate insulating layer, and the gate is only a single layer of gate.
  • the first organic insulating layer 161 is disposed on the first gate insulating layer 151 and the first gate 152. Therefore, in any case, the first organic insulating layer 161 is provided on the gate insulating layer and the gate.
  • step S330 deposit a metal layer on the first organic insulating layer, and pattern the metal layer to form a metal foil layer.
  • the metal foil in the metal foil layer 162 is a cross-connected mesh structure.
  • the metal foil layer 162 is used to improve the folding resistance of the foldable display panel 100 while improving the foldable display panel The recoverability of 100 after bending, thereby improving the reliability and reliability of the product.
  • step S340 forming a second organic insulating layer on the metal foil layer through the processes of coating, exposure development, and annealing.
  • the first organic insulating layer 161 and the second organic insulating layer 163 are made of an organic material resistant to bending and having good flexibility.
  • the first organic insulating layer 161 and the second organic insulating layer 163 replace the inorganic insulating layer in the existing display panel, thereby improving the bending resistance of the foldable display panel 100.
  • step S340 using a photomask process and an etching process, the second organic insulating layer 163, the metal foil layer 162, the first organic insulating layer 161, and the first gate insulating layer
  • the third via hole 171 and the fourth via hole 172 are formed in the 151 and the second gate insulating layer 153, and the positions of the third via hole 171 and the fourth via hole 172 are respectively the same as the first via hole 164 It corresponds to the position of the second via 165.
  • step S340 further includes the following steps after step S340:
  • step S341 filling the third via 171 and the fourth via 172 with a metal material to form the source electrode 173 and the drain electrode 174, respectively.
  • step S342 coating resin on the second organic insulating layer to form a flat layer, and forming an anode layer and a pixel definition layer on the flat layer, and patterning the anode layer 182 Change.
  • a flat layer 181 is formed by coating a resin on the second organic insulating layer 163. After forming the flat layer 181, indium tin oxide ITO is sputtered on the flat layer 181 to form an anode layer 182.
  • the anode layer 182 is a transparent conductive film.
  • a pixel definition layer 191 is also provided on the flat layer 181.
  • step S343 opening the pixel definition layer, and providing an isolation pillar in the pixel definition layer.
  • the pixel definition layer 191 has an opening for exposing a part of the anode layer 182.
  • the pixel definition layer 191 is used to determine the distribution of red sub-pixels, green sub-pixels, and blue sub-pixels (that is, RGB).
  • the organic light-emitting layer is disposed in the opening.
  • a transparent cathode layer parallel to the anode layer 182 through the organic light-emitting layer above the opening the organic material of the organic light-emitting layer emits light under the pressure difference between the anode layer 182 and the cathode layer provided.

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Abstract

一种可折叠显示面板（100）及其制作方法，可折叠显示面板（100）在栅极绝缘层和栅极上设置有一第一有机绝缘层（161），第一有机绝缘层（161）覆盖栅极，在第一有机绝缘层（161）上设置一金属箔层（162），在金属箔层（162）上设置一第二有机绝缘层（163）；金属箔层（162）中的金属箔为交叉互联的网状结构。该可折叠显示面板（100）在提高耐弯折特性的同时，提高了弯折后的可恢复性。

Description

可折叠显示面板及其制作方法和可折叠显示装置 技术领域
本发明涉及显示技术领域，尤其涉及一种可折叠显示面板及其制作方法和可折叠显示装置。
 背景技术
显示产品目前正在蓬勃发展，并且随着消费者对笔记本电脑、智能手机、电视、平板电脑、智能手表和健身腕带等各类产品的需求的持续提升，将来会涌现出更多的新显示产品。特别是，市场上的智能手机显示屏的主流趋势是全面屏，随着人们对智能手机超薄、形态多元化的需求不断增强，于是，可折叠的智能手机可能成为显示产业发展的新方向和产能突破点。这样，相对于目前所使用的背板技术，可折叠智能手机的技术需求及产品的信赖性要求会更高。
 技术问题
如果将现有低温多晶硅（Low Temperature Poly-silicon，简称LTPS）背板技术直接移植至可折叠产品上，那么可折叠产品可能会产生背板脆裂的问题，且产品的可靠性较低。
有鉴于此，需提供一种新型的可折叠显示面板或显示装置，以解决上述问题。
 技术解决方案
本发明的目的在于，提供一种可折叠显示面板及其制作方法和可折叠显示装置，所述可折叠显示面板通过将传统的无机绝缘层替换为耐弯折的有机绝缘层，以提高显示面板的可弯折性；另外，在有机绝缘层层间新增交叉互联的金属箔层，从而在提高显示面板的耐弯折特性的同时，提高弯折后的可恢复性，进一步提高产品的信赖性和可靠度。
根据本发明的一方面，本发明提供了一种可折叠显示面板，其包括：一柔性衬底，在所述柔性衬底上沿背离柔性衬底方向依次层叠设置有一阻挡层、一缓冲层、一有源层、一栅极绝缘层和一栅极，在所述栅极绝缘层和栅极上设置有一第一有机绝缘层，所述第一有机绝缘层覆盖所述栅极，在所述第一有机绝缘层上设置一金属箔层，在所述金属箔层上设置一第二有机绝缘层；所述第一有机绝缘层和所述第二有机绝缘层由有机材料制成；所述金属箔层中的金属箔为交叉互联的网状结构。
在本发明的一实施例中，在所述柔性衬底和所述第一有机绝缘层之间沿背离柔性衬底方向依次层叠设置有一聚酰亚胺层、一阻挡层、一缓冲层、一有源层、一第一栅极绝缘层、一第一栅极、一第二栅极绝缘层和一第二栅极。
在本发明的一实施例中，在所述第二有机绝缘层、所述金属箔层、所述第一有机绝缘层、所述第二栅极绝缘层和所述第一栅极绝缘层中设置一源极和一漏极；在所述第二有机绝缘层上设置有一平坦层，在平坦层上设置有一阳极层和一像素定义层以及设置在所述像素定义层上的隔离柱。
在本发明的一实施例中，所述缓冲层包括：沿背离柔性衬底方向依次层叠设置的一第一缓冲层、一第二缓冲层和一第三缓冲层，所述第一缓冲层由氮化硅材料制成，第二缓冲层由氧化硅材料制成，第三缓冲层由非晶矽材料制成；所述第一缓冲层的厚度为500埃，所述第二缓冲层的厚度为2000～3000埃，所述第三缓冲层的厚度为400～500埃。
在本发明的一实施例中，所述栅极绝缘层包括第一栅极绝缘层和第二栅极绝缘层，所述栅极包括一第一栅极和一第二栅极；其中所述第一栅极绝缘层、所述第一栅极、所述第二栅极绝缘层和所述第二栅极沿背离柔性衬底方向依次层叠设置。
在本发明的一实施例中，所述第一栅极绝缘层由氧化硅材料制成，所述第一栅极绝缘层的厚度为900～1500埃；所述第二栅极绝缘层由氮化硅材料制成，所述第二栅极绝缘层的厚度为1000～1300埃。
根据本发明的另一方面，提供一种可折叠显示装置，所述可折叠显示装置包括上述可折叠显示面板。
根据本发明的又一方面，提供一种可折叠显示面板的制作方法，其包括以下步骤：（a）提供一柔性衬底；（b）在所述柔性衬底上设置一阻挡层；（c）在所述阻挡层上依次沉积氮化硅层、氧化硅层和非晶硅层，以形成一缓冲层；（d）在所述缓冲层上形成一有源层，并且对所述有源层进行曝光显影、刻蚀和剥膜制程，以图案化所述有源层；（e）在所述有源层和所述缓冲层上设置一第一栅极绝缘层，所述第一栅极绝缘层覆盖所述有源层，在所述第一栅极绝缘层上沉积一第一金属层，并且对所述第一金属层图案化，以形成第一栅极；（f）在所述第一栅极绝缘层和所述第一栅极上设置一第二栅极绝缘层，所述第二栅极绝缘层覆盖所述第一栅极，在所述第二栅极绝缘层上沉积一第二金属层，并且对所述第二金属层图案化，以形成第二栅极，并构建存储电容；（g）在所述第二栅极绝缘层和所述第二栅极上形成一第一有机绝缘层；（h）在所述第一有机绝缘层上沉积一金属层，并且对所述金属层进行图案化以形成一金属箔层；以及（i）在所述金属箔层上形成一第二有机绝缘层。
在本发明的一实施例中，所述方法还包括：在步骤（g）中，采用光罩制程，在所述第一有机绝缘层中形成一第一过孔和一第二过孔。
在本发明的一实施例中，所述方法还包括：在步骤（i）中，采用光罩制程和刻蚀制程，在所述第二有机绝缘层、所述金属箔层、所述第一有机绝缘层、所述第一栅极绝缘层和第二栅极绝缘层内形成一第三过孔和一第四过孔，所述第三过孔和所述第四过孔的位置分别与所述第一过孔和所述第二过孔的位置相对应。
在本发明的一实施例中，所述方法还包括：在步骤（i）之后包括以下步骤：（i1）在所述第三过孔和所述第四过孔内填充金属材料，以分别形成源极和漏极；（i2）在所述第二有机绝缘层上涂覆树脂以形成一平坦层，并且在所述平坦层上形成一阳极层和一像素定义层，并且对所述阳极层进行图案化；（i3）对所述像素定义层进行开孔，以及在所述像素定义层设置隔离柱。
 有益效果
本发明的优点在于，本发明可折叠显示面板及其制作方法和可折叠显示装置是通过将传统的无机绝缘层替换为耐弯折的有机绝缘层，以提高显示面板的可弯折性；另外，在有机绝缘层层间新增交叉互联的金属箔层，从而在提高显示面板的耐弯折特性的同时，提高弯折后的可恢复性，进一步提高产品的信赖性和可靠度。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明一实施例中的可折叠显示面板的结构示意图；
图2是本发明一实施例中的可折叠显示装置的示意图；
图3是本发明一实施例中的可折叠显示面板的制作方法的步骤流程图。
图4A至图4L是本发明所述实施例中的可折叠显示面板的制作方法的工艺流程图。
 本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明的说明书和权利要求书以及上述附图中的术语“第一”、“第二”、“第三”等（如果存在）是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解，这样描述的对象在适当情况下可以互换。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含。
在本专利文档中，下文论述的附图以及用来描述本发明公开的原理的各实施例仅用于说明，而不应解释为限制本发明公开的范围。所属领域的技术人员将理解，本发明的原理可在任何适当布置的系统中实施。将详细说明示例性实施方式，在附图中示出了这些实施方式的实例。此外，将参考附图详细描述根据示例性实施例的终端。附图中的相同附图标号指代相同的元件。
本发明说明书中使用的术语仅用来描述特定实施方式，而并不意图显示本发明的概念。除非上下文中有明确不同的意义，否则，以单数形式使用的表达涵盖复数形式的表达。在本发明说明书中，应理解，诸如“包括”、“具有”以及“含有”等术语意图说明存在本发明说明书中揭示的特征、数字、步骤、动作或其组合的可能性，而并不意图排除可存在或可添加一个或多个其他特征、数字、步骤、动作或其组合的可能性。附图中的相同参考标号指代相同部分。
本发明实施例提供一种可折叠显示面板。以下将分别进行详细说明。
参考图1，图1是本发明一实施例中的可折叠显示面板的结构示意图。本发明所述可折叠显示面板100包括：一柔性衬底110，在所述柔性衬底110上沿背离柔性衬底110方向依次层叠设置有一阻挡层120、一缓冲层130、一有源层140、一栅极绝缘层（包括第一栅极绝缘层151、第二栅极绝缘层153）和一栅极（包括第一栅极152和第二栅极154）。
具体地，所述柔性衬底110可以通过在一玻璃基板111上涂布聚酰亚胺材料112并经固化后形成的。当然，也可以在玻璃基板111上涂布聚对苯二甲酸乙二醇酯材料而形成相应的柔性衬底110。由于聚酰亚胺材料112具有温度广、耐化学腐蚀、高强度等优点，因此制成的衬底具有良好的柔性。需注意的是，在制成可折叠显示面板100之前，会将柔性衬底110从玻璃基板111上剥离。
所述阻挡层120是由氮化硅SiNx或二氧化硅SiO 2材料制成，或者由它们构成的叠层材料形成。
所述缓冲层130包括氧化物（例如氧化硅，SiOx）和/或氮化物（例如氮化硅，SiNx）。优选地，所述缓冲层130包括沿背离柔性衬底110方向依次层叠设置的第一缓冲层131、第二缓冲层132和第三缓冲层133，所述第一缓冲层131由氮化硅SiNx材料制成，第二缓冲层132由氧化硅SiO X材料制成，第三缓冲层133由非晶矽a-Si材料制成。所述第一缓冲层131的厚度为500埃，所述第二缓冲层132的厚度为2000～3000埃，所述第三缓冲层133的厚度为400～500埃。所述第一缓冲层131和所述第二缓冲层132的设置能够更好地缓冲衬底在制备过程中对衬底的损伤。且，所述第一缓冲层131采用氮化硅材料，在制备氮化硅材料的时候能够产生氢元素用于修补低温多晶硅层（即后文所述的有源层140），提高所述低温多晶硅层的电性能。所述第二缓冲层132采用氧化硅材料，用于改善所述第二缓冲层132的应力，防止所述第二缓冲层132脱落。
所述有源层140是通过采用低温多晶硅（low temperature poly-silicon，简称LTPS）工艺而在所述缓冲层130上形成的。所述低温多晶硅工艺包括准分子镭射结晶（excimer laser annealing，简称ELA）工艺。另外，对所述有源层140进行曝光、显影、刻蚀和剥膜制程，以图案化所述有源层140。
在本实施例中，所述栅极绝缘层包括第一栅极绝缘层151和第二栅极绝缘层153，所述栅极也包括第一栅极152和第二栅极154；其中所述第一栅极绝缘层151、第一栅极152、第二栅极绝缘层153和所述第二栅极154沿背离柔性衬底110方向依次层叠设置。
所述第一栅极绝缘层151是由氧化硅材料制成，所述第一栅极绝缘层151的厚度为900～1500埃。所述第二栅极绝缘层153是由氮化硅材料制成，所述第二栅极绝缘层153的厚度为1000～1300埃。在本实施例中，在图案化的有源层140和缓冲层130上设置一第一栅极绝缘层151，所述第一栅极绝缘层151覆盖所述图案化的有源层140。通过在所述第一栅极绝缘层151上沉积一第一金属层，并且对所述第一金属层进行图案化，以形成第一栅极152。且，在所述第一栅极绝缘层151和所述第一栅极152上设置一第二栅极绝缘层153，所述第二栅极绝缘层153覆盖所述第一栅极152，在所述第二栅极绝缘层153上沉积一第二金属层，并且对所述第二金属层进行图案化，以形成第二栅极154，于是通过第一栅极152和第二栅极154以构建存储电容。
当然，在其他实施例中，所述栅极绝缘层也可以仅为单层的栅极绝缘层，所述栅极仅为单层的栅极。
在所述栅极绝缘层和栅极上设置有一第一有机绝缘层161。参考图1所示，在本实施例中，所述第一有机绝缘层161设置在所述第二栅极绝缘层153和第二栅极154上。所述第一有机绝缘层161覆盖所述第二栅极154，在所述第一有机绝缘层161上设置一金属箔层162，在所述金属箔层162上设置一第二有机绝缘层163。也就是说，所述金属箔层162设置在所述第一有机绝缘层161和所述第二有机绝缘层163之间。需说明的是，在本发明的其他部分实施例中，所述柔性衬底110与所述栅极绝缘层、所述栅极之间也可以仅包括有源层140，未设置阻挡层120和缓冲层130。
所述第一有机绝缘层161和所述第二有机绝缘层163由耐弯折、具有很好柔性特性的有机材料制成。所述第一有机绝缘层161和所述第二有机绝缘层163替代了现有显示面板中的无机绝缘层，从而改善所述可折叠显示面板100的耐弯折性。所述金属箔层162中的金属箔为交叉互联的网状结构，所述金属箔层162用于在提高所述可折叠显示面板100的耐弯折特性的同时，提高所述可折叠显示面板100在弯折后的可恢复性，从而提高产品的信赖性和可靠度。
进一步地，在本实施例中，在所述第二有机绝缘层163、所述金属箔层162、所述第一有机绝缘层161、所述第二栅极绝缘层153和所述第一栅极绝缘层151中设置源极173和漏极174。由于在所述第二有机绝缘层163、所述金属箔层162、所述第一有机绝缘层161、所述第二栅极绝缘层153和所述第一栅极绝缘层151中设置有第三过孔171和第四过孔172，并且通过对所述第三过孔171和所述第四过孔172进行导体化处理，例如填充金属材料，以分别形成源极173和漏极174。
进一步地，在所述第二有机绝缘层163上沿背离柔性衬底110方向依次层叠设置有一平坦层181和一阳极层182。其中，通过在所述第二有机绝缘层163上涂覆树脂，以形成一平坦层181。在形成平坦层181之后，在所述平坦层181上溅射氧化铟锡ITO或氧化铟锌IZO，以形成一阳极层182，并且对阳极层182进行图案化。所述阳极层182为透明导电膜。另外，在所述平坦层181上还设置有像素定义层191。所述像素定义层191具有开口，用于使阳极层182的一部分露出。所述像素定义层191用于确定红色子像素、绿色子像素、蓝色子像素（即RGB）的分布。
进一步地，本领域技术人员可以理解的，有机发光层（图中未示）设置于所述开口中。通过在开口的上方隔着有机发光层与阳极层182相平行设置透明的阴极层（图中未示），在阳极层182与所设置阴极层的压差作用下，有机发光层的有机材料发光。另外，所述有机发光层通常包括空穴注入层(HIL)、空穴传输层(HTL)、发光层(EML)、电子传输层(ETL)、及电子注入层(EIL)，其结构为本领域技术人员所熟知的，在附图中未示出。
进一步地，在所述像素定义层191上间隔设置的隔离柱192。所述隔离柱192起到物理空间上的支撑和隔离的作用。
所述可折叠显示面板100通过上述设计，即通过将传统的无机绝缘层替换为耐弯折的有机绝缘层，以提高显示面板的可弯折性；另外，在有机绝缘层层间新增交叉互联的金属箔层162，从而在提高显示面板的耐弯折特性的同时，提高弯折后的可恢复性，进一步提高产品的信赖性和可靠度。
参考图2，图2是本发明一实施例中的可折叠显示装置的结构示意图。本发明还提供一种可折叠显示装置200，所述可折叠显示装置200包括上述可折叠显示面板100，所述可折叠显示面板100的具体结构如上文的描述，在此不再赘述。
参考图3，图3是本发明一实施例中的可折叠显示面板的制作方法的步骤流程图。图4A至图4L是本发明所述实施例中的可折叠显示面板的制作方法的工艺流程图。
本发明还提供一种如上述可折叠显示面板的制作方法。所述可折叠显示面板100的具体结构如上文的描述，在此不再赘述。所述方法包括以下步骤：
步骤S310：提供一柔性衬底。
结合图4A所示，提供柔性衬底的具体工艺为：在一玻璃基板上涂布聚酰亚胺材料，以固化形成聚酰亚胺层。由于聚酰亚胺材料具有温度广、耐化学腐蚀、高强度等优点，因此制成的衬底具有良好的柔性。
结合图4B所示，步骤S311：在柔性衬底上设置一阻挡层，所述阻挡层覆盖所述柔性衬底。
所述阻挡层120是由氮化硅SiNx或二氧化硅SiO 2材料制成，或者由它们构成的叠层材料形成。
结合图4C所示，步骤S312：通过化学气相沉积工艺，在所述阻挡层上依次沉积氮化硅层、氧化硅层和非晶硅层，以形成缓冲层130。
所述缓冲层130包括氧化物（例如氧化硅，SiOx）和/或氮化物（例如氮化硅，SiNx）。优选地，所述缓冲层130包括沿背离柔性衬底110方向依次层叠设置的第一缓冲层131、第二缓冲层132和第三缓冲层133，所述第一缓冲层131由氮化硅SiNx材料制成，第二缓冲层132由氧化硅SiO X材料制成，第三缓冲层133由非晶矽a-Si材料制成。所述第一缓冲层131的厚度为500埃，所述第二缓冲层132的厚度为2000～3000埃，所述第三缓冲层133的厚度为400～500埃。所述第一缓冲层131和所述第二缓冲层132的设置能够更好地缓冲衬底在制备过程中对衬底的损伤。且，所述第一缓冲层131采用氮化硅材料，在制备氮化硅材料的时候能够产生氢元素用于修补低温多晶硅层（即后文所述的有源层140），提高所述低温多晶硅层的电性能。所述第二缓冲层132采用氧化硅材料，用于改善所述第二缓冲层132的应力，防止所述第二缓冲层132脱落。
结合图4D所示，步骤S313：通过采用准分子镭射结晶工艺，在所述缓冲层上形成一有源层，并且对所述有源层进行曝光、显影、刻蚀和剥膜制程，以图案化所述有源层。
所述有源层140是通过采用低温多晶硅（low temperature poly-silicon，简称LTPS）工艺而在所述缓冲层130上形成的。所述低温多晶硅工艺包括准分子镭射结晶（excimer laser annealing，简称ELA）工艺。另外，对所述有源层140进行曝光、显影、刻蚀和剥膜制程，以图案化所述有源层140。
结合图4E所示，步骤S314：在所述有源层和所述缓冲层上设置一第一栅极绝缘层，所述第一栅极绝缘层覆盖所述有源层，在所述第一栅极绝缘层上沉积一第一金属层，并且对所述第一金属层图案化，以形成第一栅极。
结合图4F所示，步骤S315：在所述第一栅极绝缘层和所述第一栅极上设置一第二栅极绝缘层，所述第二栅极绝缘层覆盖所述第一栅极，在所述第二栅极绝缘层上沉积一第二金属层，并且对所述第二金属层图案化，以形成第二栅极，并构建存储电容。
在本实施例中，所述栅极绝缘层包括第一栅极绝缘层151和第二栅极绝缘层153，所述栅极也包括第一栅极152和第二栅极154；其中所述第一栅极绝缘层151、第一栅极152、第二栅极绝缘层153和所述第二栅极154沿背离柔性衬底110方向依次层叠设置。所述第一栅极绝缘层151是由氧化硅材料制成，所述第一栅极绝缘层151的厚度的900～1500埃。所述第二栅极绝缘层153是由氮化硅材料制成，所述第二栅极绝缘层153的厚度的1000～1300埃。
结合图4G所示，步骤S320：通过涂布、曝光显影和退火的工艺，在第二栅极绝缘层和第二栅极上形成一第一有机绝缘层。
需说明的是，在本实施例中，所述第一有机绝缘层161设置在第二栅极绝缘层153和第二栅极154上。当然，在其他实施例中，所述栅极绝缘层也可以仅为单层的栅极绝缘层，所述栅极仅为单层的栅极。此时，所述第一有机绝缘层161设置在第一栅极绝缘层151和第一栅极152上。因此，在任何一种情况下，所述第一有机绝缘层161均设置在栅极绝缘层和栅极上。
在步骤S320中：采用光罩制程，在所述第一有机绝缘层中形成第一过孔164和第二过孔165。
结合图4H所示，步骤S330：在所述第一有机绝缘层上沉积一金属层，并且对所述金属层进行图案化以形成一金属箔层。
所述金属箔层162中的金属箔为交叉互联的网状结构，所述金属箔层162用于在提高所述可折叠显示面板100的耐弯折特性的同时，提高所述可折叠显示面板100在弯折后的可恢复性，从而提高产品的信赖性和可靠度。
结合图4I所示，步骤S340：通过涂布、曝光显影和退火的工艺，在所述金属箔层上形成一第二有机绝缘层。
所述第一有机绝缘层161和所述第二有机绝缘层163由耐弯折、具有很好柔性特性的有机材料制成。所述第一有机绝缘层161和所述第二有机绝缘层163替代了现有显示面板中的无机绝缘层，从而改善所述可折叠显示面板100的耐弯折性。
另外，在步骤S340中，采用光罩制程和刻蚀制程，在所述第二有机绝缘层163、所述金属箔层162、所述第一有机绝缘层161、所述第一栅极绝缘层151和第二栅极绝缘层153内形成第三过孔171和第四过孔172，并且所述第三过孔171和所述第四过孔172的位置分别与所述第一过孔164和所述第二过孔165的位置相对应。
进一步地，所述方法还包括：在步骤S340之后包括以下步骤：
结合图4J所示，步骤S341：在所述第三过孔171和所述第四过孔172内填充金属材料，以分别形成源极173和漏极174。
结合图4K所示，步骤S342：在所述第二有机绝缘层上涂覆树脂以形成一平坦层，并且在所述平坦层上形成一阳极层和像素定义层，并且对阳极层182进行图案化。
具体地，在本实施例中，通过在所述第二有机绝缘层163上涂覆树脂，以形成一平坦层181。在形成平坦层181之后，在所述平坦层181上溅射氧化铟锡ITO，以形成一阳极层182。所述阳极层182为透明导电膜。另外，在所述平坦层181上还设置有像素定义层191。
结合图4L所示，步骤S343：对所述像素定义层进行开孔，以及在所述像素定义层设置隔离柱。
所述像素定义层191具有开口，用于使阳极层182的一部分露出。所述像素定义层191用于确定红色子像素、绿色子像素、蓝色子像素（即RGB）的分布。
进一步地，图中未显示，本领域技术人员可以理解的，有机发光层设置于所述开口中。通过在开口的上方隔着有机发光层与阳极层182相平行设置透明的阴极层，在阳极层182与所设置阴极层的压差作用下，有机发光层的有机材料发光。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。
 工业实用性
本申请的主题可以在工业中制造和使用，具备工业实用性。

Claims (10)

  1. 一种可折叠显示面板，其包括：一柔性衬底，在所述柔性衬底上沿背离柔性衬底方向依次层叠设置有一阻挡层、一缓冲层、一有源层、一栅极绝缘层和一栅极，其中在所述栅极绝缘层和栅极上设置有一第一有机绝缘层，所述第一有机绝缘层覆盖所述栅极，在所述第一有机绝缘层上设置一金属箔层，在所述金属箔层上设置一第二有机绝缘层；所述第一有机绝缘层和所述第二有机绝缘层由有机材料制成；所述金属箔层中的金属箔为交叉互联的网状结构。
  2. 根据权利要求1所述的可折叠显示面板，其中在所述第二有机绝缘层、所述金属箔层、所述第一有机绝缘层、所述第二栅极绝缘层和所述第一栅极绝缘层中设置一源极和一漏极；在所述第二有机绝缘层上设置有一平坦层，在平坦层上设置有一阳极层和一像素定义层以及设置在所述像素定义层上的隔离柱。
  3. 根据权利要求1所述的可折叠显示面板，其中所述缓冲层包括：沿背离柔性衬底方向依次层叠设置的一第一缓冲层、一第二缓冲层和一第三缓冲层，所述第一缓冲层由氮化硅材料制成，第二缓冲层由氧化硅材料制成，第三缓冲层由非晶矽材料制成；所述第一缓冲层的厚度为500埃，所述第二缓冲层的厚度为2000～3000埃，所述第三缓冲层的厚度为400～500埃。
  4. 根据权利要求1所述的可折叠显示面板，其中所述栅极绝缘层包括一第一栅极绝缘层和一第二栅极绝缘层，所述栅极包括一第一栅极和一第二栅极；其中所述第一栅极绝缘层、所述第一栅极、所述第二栅极绝缘层和所述第二栅极沿背离柔性衬底方向依次层叠设置。
  5. 根据权利要求4所述的可折叠显示面板，其中所述第一栅极绝缘层由氧化硅材料制成，所述第一栅极绝缘层的厚度为900～1500埃；所述第二栅极绝缘层由氮化硅材料制成，所述第二栅极绝缘层的厚度为1000～1300埃。
  6. 一种可折叠显示装置，其中所述可折叠显示装置包括权利要求1至5任一项所述的可折叠显示面板。
  7. 一种如权利要求1所述的可折叠显示面板的制作方法，其中包括以下步骤：
    （a）提供一柔性衬底；
    （b）在所述柔性衬底上设置一阻挡层；
    （c）在所述阻挡层上依次沉积氮化硅层、氧化硅层和非晶硅层，以形成一缓冲层；
    （d）在所述缓冲层上形成一有源层，并且对所述有源层进行曝光显影、刻蚀和剥膜制程，以图案化所述有源层；
    （e）在所述有源层和所述缓冲层上设置一第一栅极绝缘层，所述第一栅极绝缘层覆盖所述有源层，在所述第一栅极绝缘层上沉积一第一金属层，并且对所述第一金属层图案化，以形成一第一栅极；
    （f）在所述第一栅极绝缘层和所述第一栅极上设置一第二栅极绝缘层，所述第二栅极绝缘层覆盖所述第一栅极，在所述第二栅极绝缘层上沉积一第二金属层，并且对所述第二金属层图案化，以形成一第二栅极，并构建一存储电容；
    （g）在所述第二栅极绝缘层和所述第二栅极上形成一第一有机绝缘层；
    （h）在所述第一有机绝缘层上沉积一金属层，并且对所述金属层进行图案化以形成一金属箔层；以及
    （i）在所述金属箔层上形成一第二有机绝缘层。
  8. 根据权利要求7所述的可折叠显示面板的制作方法，其中所述方法还包括：在步骤（g）中，采用光罩制程，在所述第一有机绝缘层中形成一第一过孔和一第二过孔。
  9. 根据权利要求7所述的可折叠显示面板的制作方法，其中所述方法还包括：在步骤（i）中，采用光罩制程和刻蚀制程，在所述第二有机绝缘层、所述金属箔层、所述第一有机绝缘层、所述第一栅极绝缘层和第二栅极绝缘层内形成一第三过孔和一第四过孔，所述第三过孔和所述第四过孔的位置分别与所述第一过孔和所述第二过孔的位置相对应。
  10. 根据权利要求9所述的可折叠显示面板的制作方法，其中所述方法还包括：在步骤（i）之后包括以下步骤：
    （i1）在所述第三过孔和所述第四过孔内填充金属材料，以分别形成一源极和一漏极；
    （i2）在所述第二有机绝缘层上涂覆树脂以形成一平坦层，并且在所述平坦层上形成一阳极层和一像素定义层，并且对所述阳极层进行图案化；以及
    （i3）对所述像素定义层进行开孔，以及在所述像素定义层设置隔离柱。
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