WO2020114036A1 - 阵列基板的制备方法、显示面板及蒸镀装置 - Google Patents

阵列基板的制备方法、显示面板及蒸镀装置 Download PDF

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Publication number
WO2020114036A1
WO2020114036A1 PCT/CN2019/105975 CN2019105975W WO2020114036A1 WO 2020114036 A1 WO2020114036 A1 WO 2020114036A1 CN 2019105975 W CN2019105975 W CN 2019105975W WO 2020114036 A1 WO2020114036 A1 WO 2020114036A1
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Prior art keywords
shielding sheet
base substrate
substrate
vapor deposition
carrier
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PCT/CN2019/105975
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English (en)
French (fr)
Inventor
刘淑杰
薛智勇
李海龙
马玲玲
米红玉
刘亮亮
Original Assignee
京东方科技集团股份有限公司
鄂尔多斯市源盛光电有限责任公司
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Application filed by 京东方科技集团股份有限公司, 鄂尔多斯市源盛光电有限责任公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/754,775 priority Critical patent/US11495625B2/en
Publication of WO2020114036A1 publication Critical patent/WO2020114036A1/zh
Priority to US17/953,986 priority patent/US11688746B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a method for preparing an array substrate, a display panel, and an evaporation device.
  • the current display screen will also be used in the field of watches and clocks.
  • a hole is formed in the middle of the panel to place the mechanical hand of the watch.
  • the organic material vapor-deposited on the substrate glass of the panel and the Frit glue (glass glue) used in the package have poor adhesion or even cannot be bonded, resulting in the Frit glue being unusable after curing.
  • the substrate glass and the cover glass are bonded together, the problem of package leakage at the middle opening will occur.
  • the present disclosure provides a method for preparing an array substrate, the method comprising: fixing a base substrate on a vapor deposition stage; attaching the base substrate to cover at least the substrate A shielding sheet in a preset area of the base substrate; an open mask plate is provided and aligned in association with the base substrate; and the substrate on which the shielding sheet is attached is aligned using the open mask plate
  • the substrate is vapor-deposited to form a vapor-deposited material layer.
  • the predetermined area is used to form a through hole therein, and the area of the blocking sheet is larger than the area of the through hole.
  • the attaching the shielding sheet on the base substrate includes: placing the shielding sheet in a fixed position of a carrier; positioning the carrier with the base substrate to make The masking piece is aligned with the corresponding preset area; the masking piece is attached to the preset area; and the masking piece is separated from the carrier.
  • the carrier has a recess corresponding to a predetermined area of the base substrate; placing the shielding sheet on a fixed position of the carrier includes: placing the shielding sheet on the carrier Inside the recess.
  • the vapor deposition stage is provided with an electromagnet
  • the material of the shielding sheet is a magnetic material
  • the material of the carrier is a non-magnetic polymer
  • the fixing of the shielding sheet to The preset through-hole area includes: activating the electromagnet and attracting the shielding sheet to the preset through-hole area of the base substrate.
  • the aligning the open mask with the base substrate includes: using a first alignment mark provided on the open mask with a third alignment on the base substrate The logo is aligned.
  • the aligning the carrier with the base substrate includes: aligning the second alignment mark provided on the carrier with the third alignment mark on the base substrate .
  • the preparation method further includes: after performing the vapor deposition, removing the shielding sheet and the vapor deposition material layer on the shielding sheet.
  • a display panel including an array substrate and a counter substrate disposed opposite to the array substrate, the array substrate is prepared using the preparation method described in any embodiment, and the display panel There are through holes penetrating the array substrate and the counter substrate, and the through holes penetrate the array substrate in the predetermined area.
  • a vapor deposition apparatus including: a vapor deposition stage for carrying a substrate; and a mask assembly for vapor deposition, wherein the mask assembly includes: an open type A mask plate, the open mask plate has at least one opening for vapor deposition; at least one shielding sheet corresponding to the at least one opening, and the area of each shielding sheet is smaller than the area of the corresponding opening.
  • the mask assembly further includes: a carrier for carrying the at least one shielding sheet, the at least one shielding sheet being disposed in a corresponding recess on the carrier.
  • the vapor deposition device further includes an electromagnet, and the material of the at least one shielding sheet is a magnetic material.
  • the material of the at least one shielding sheet is stainless steel.
  • the open mask has a first alignment mark
  • the carrier has a second alignment mark
  • the substrate has a third alignment mark
  • the first alignment mark, The second alignment mark and the third alignment mark align the open mask, the carrier, and the substrate.
  • the vapor deposition apparatus further includes a source for providing vapor deposition material to the substrate.
  • each of the at least one shielding sheet is arranged such that its projection on the substrate covers a corresponding through hole to be formed on the substrate.
  • FIG. 1 is a schematic flowchart of a preparation method provided by an embodiment of the present disclosure
  • FIG. 2 is a schematic structural diagram of an open mask provided by an embodiment of the present disclosure
  • FIG. 3 is a schematic structural diagram of a tray provided by an embodiment of the present disclosure.
  • FIG. 4 is a schematic structural diagram of a shielding sheet provided by an embodiment of the present disclosure.
  • FIG. 5 shows a schematic diagram of an evaporation apparatus according to an embodiment of the present disclosure.
  • a method for manufacturing an array substrate (and a display panel including the array substrate) is provided.
  • the method may include: fixing a base substrate on a vapor deposition stage; attaching a shielding sheet for covering at least a predetermined area of the base substrate on the base substrate;
  • the base substrates are arranged and aligned in association; the base substrate to which the shielding sheet is attached is vapor-deposited using the open mask plate to form a vapor-deposited material layer.
  • a method for preparing an array substrate (and a display panel including the array substrate) may include the following steps:
  • Step S101 fixing the base substrate on the evaporation stage
  • Step S102 attaching a shielding sheet for covering a preset area on the base substrate
  • Step S103 align and fix the open mask and the base substrate
  • Step S104 using an open mask to vapor-deposit the base substrate to which the shielding sheet is attached.
  • an array substrate or a display panel including the array substrate can be prepared.
  • the prepared display panel may include the array substrate prepared as above and a counter substrate disposed opposite to the array substrate.
  • the prepared array substrate and counter substrate have through holes penetrating both. That is, the display panel may have a through hole penetrating the array substrate and the counter substrate.
  • the through hole may be formed in the preset area. Therefore, in the following, the preset area may also be referred to as a preset through-hole area.
  • the above array substrate or display panel may be applied to a wearable device.
  • the above-mentioned array substrate or display panel may be used as the dial of the timepiece, and the through hole on the display panel is used to set the hands.
  • the array substrate may include the base substrate.
  • step S101 the base substrate is fixed on the vapor deposition stage.
  • step S102 a shielding sheet 1 (see FIG. 3) is attached to the predetermined through hole area of the base substrate to cover the predetermined through hole area of the base substrate.
  • step S103 the open mask 3 (see FIG. 2) is aligned with the base substrate and fixed.
  • the opening 31 (see FIG. 2) of the open mask plate 3 may correspond to the reserved through hole area of the base substrate.
  • the area of the opening 31 for vapor deposition of the open mask 3 is larger than the area of the shielding sheet 1.
  • step S104 the base substrate to which the shielding sheet is attached is vapor-deposited using an open mask.
  • the shielding sheet 1 covers the predetermined through hole area of the base substrate, it is possible to effectively prevent the predetermined through hole area of the base substrate from adhering to the vapor deposition material.
  • the evaporation material is an organic material, it is possible to effectively prevent the organic material from adhering to the predetermined through-hole area of the base substrate, so that the predetermined through-hole position of the base substrate is free of organic material.
  • the specific size of the shielding sheet 1 is not limited in this embodiment, and the shape and diameter of the shielding sheet may be set according to the shape and diameter of the through hole to be opened. In some implementations, a predetermined through-hole position on the base substrate may be punched to form a through-hole with a smaller area than the shielding sheet 1.
  • the diameter of the through hole can be made smaller than the diameter of the covering area of the shielding sheet 1 on the base substrate. In this way, there can be a ring-shaped reserved area without organic material around the through hole.
  • the glass glue located in the annular reserved area can be avoided from being affected by organic materials, and the adhesion is better, so that the array substrate and the opposite substrate are better bonded , Which can effectively alleviate the problem of package leakage at the through hole of the display panel.
  • the ring-shaped display panel in which the substrate has through holes may be prepared using the above-mentioned preparation method.
  • the shielding sheet 1 is used to shield the predetermined through-hole position of the base substrate to avoid evaporation of organic material to the predetermined through-hole position, thereby effectively alleviating or solving the problem of package air leakage at the through-hole position of the display panel.
  • the base plate is attached to cover the predetermined through-hole area
  • the shielding sheet 1 may specifically include the following steps.
  • the shielding sheet 1 is placed at a fixed position of the carrier (for example, tray) 2.
  • the tray 2 Position the tray 2 with the base substrate so that the shielding sheet 1 is positioned relative to the corresponding preset through hole area.
  • the tray 2 may be aligned and attached to the base substrate.
  • the shielding sheet 1 is attached (eg, fixed) to the predetermined through hole area. In some implementations, at this time or later, the shielding sheet 1 can be separated from the tray 2.
  • the tray 2 is removed.
  • the tray 2 can be separated from the vapor deposition area.
  • the shielding sheet 1 can be fixed to the predetermined through hole area of the base substrate by using the tray 2; the present disclosure is not limited thereto.
  • the base substrate may have multiple evaporation regions.
  • the open mask 3 for vapor deposition may have a plurality of openings 31 for vapor deposition.
  • Each vapor deposition area of the base substrate to be vapor deposited may have at least one preset through hole area.
  • a plurality of shielding sheets 1 may be provided on the tray 2 at positions corresponding to the preset through-hole regions of the base substrate in one-to-one correspondence.
  • the plurality of shielding pieces 1 may be fixed at preset positions of the tray 2 respectively. The position of the tray 2 where the shielding piece is to be provided faces the base substrate to be vapor-deposited (or to say, the surface of the base substrate to be vapor-deposited).
  • the shielding sheet 1 After the tray 2 is aligned with the base substrate to be vapor-deposited, the shielding sheet 1 will also be aligned with the predetermined through hole area one by one. Then, the shielding sheet 1 is attached to the preset through-hole area; at this time or later, the shielding sheet 1 is separated from the tray 2. Then remove the tray 2 away from the evaporation area. Next, the base substrate to be vapor-deposited using the open mask 3 is subsequently vapor-deposited. According to the embodiments of the present disclosure, the tray 2 may be used to fix the shielding sheet 1 to the reserved through-hole area of the base substrate to be vapor-deposited, with high accuracy and simple and convenient operation.
  • the tray 2 may have recesses (for example, recesses or grooves) corresponding to the predetermined through-hole regions of the base substrate.
  • the method for placing the shielding sheet 1 on the fixed position of the tray 2 may specifically include: placing the shielding sheet 1 in the recess of the tray 2.
  • the vapor deposition stage may be provided with an electromagnet
  • the material of the shielding sheet 1 may be a magnetic material
  • the material of the tray 2 may be a non-magnetic polymer.
  • the shielding sheet 1 can be fixed to the preset through-hole area by activating the electromagnet and attracting the shielding sheet 1 to the preset through-hole area of the base substrate.
  • the shielding sheet 1 is provided as a shielding sheet 1 of magnetic material, an electromagnet is provided on a vapor deposition stage for vapor deposition, and the material of the open mask plate 3 for subsequent vapor deposition is a magnetic material.
  • the magnetic material includes but is not limited to stainless steel.
  • the open mask 3 is fixed to the vapor deposition stage by the magnetic force with the electromagnet, so that the base substrate on the vapor deposition stage is vapor-deposited by the mask 3.
  • the shielding sheet 1 is configured to include a magnetic material, so that it can also be attached to a predetermined through-hole area of the base substrate depending on the magnetic force with the electromagnet.
  • the shielding sheet 1 may be attached to the base substrate as follows. After placing the shielding sheet 1 on the tray 2, the tray 2 is aligned with the base substrate; after that, the electromagnet on the evaporation stage is started, and the shielding sheet 1 is attached and fixed by the magnetic force between the electromagnets In the predetermined through hole area of the base substrate. Since the tray 2 is a non-magnetic material (for example, a polymer material), it is not magnetic and will not be affected by the electromagnet. After the shielding sheet 1 is attached to the base substrate, the tray 2 can be moved to separate the tray 2 from the shielding sheet 1. The shielding sheet 1 of magnetic material is fixed to the predetermined through hole area on the base substrate by the magnetic force with the electromagnet, the method is simple and reliable, and it is easy to operate.
  • the material of the shielding sheet 1 may be the same as the material of the open mask 3.
  • the shielding sheet 1 may be configured as a stainless steel shielding sheet 1, and it should be noted that the shielding sheet 1 may also be configured as other magnetic materials; the present disclosure is not limited to the embodiments shown here.
  • the open mask 3 may be provided with a registration mark (first registration mark) 32, and the tray 2 may be provided with a registration mark (second registration mark) 21, as shown in FIG. 2 and FIG. 3 shown.
  • An alignment mark (a third alignment mark, not shown in the figure) may be provided on the base substrate.
  • the method for aligning the tray 2 with the base substrate may specifically include: using an alignment mark (second alignment mark) 21 provided on the tray 2 and an alignment mark (third) on the base substrate Alignment mark) Alignment.
  • a third alignment mark for film layer preparation is provided on the base substrate.
  • the second alignment mark 21 on the tray 2 and the third alignment mark on the base substrate can be used to make the shielding sheet 1 placed on the tray 2 Alignment with the preset through hole area on the base substrate can effectively improve the alignment efficiency and alignment accuracy of the tray 2 and the base substrate.
  • aligning the open mask 3 with the base substrate may specifically include: using the first alignment mark 32 provided on the open mask 3 and the first alignment mark 32 on the base substrate The three alignment marks are aligned. Aligning the first alignment mark 32 on the open mask plate 3 with the third alignment mark on the base substrate can quickly align the open mask plate 3 with the base substrate, and can be effective The alignment accuracy between the open mask 3 and the base substrate is improved.
  • the shielding sheet and the vapor deposition material layer on the shielding sheet may be removed.
  • An embodiment of the present disclosure also provides a display panel, which may include an array substrate and a counter substrate disposed opposite to the array substrate.
  • the array substrate includes a base substrate and an evaporation material layer on the base substrate.
  • the array substrate may be an array substrate according to any embodiment of the present disclosure or an array substrate prepared according to any method embodiment of the present disclosure.
  • the vapor deposition material layer is prepared by any one of the preparation methods in the above technical solutions.
  • the array substrate and the counter substrate have through holes penetrating both. The through hole may penetrate the array substrate in the preset area.
  • FIG. 5 schematically shows an evaporation apparatus according to an embodiment of the present disclosure.
  • the vapor deposition apparatus 500 may include a stage 501 and a mask assembly 503 for vapor deposition.
  • the stage 501 is used to carry the base substrate 505 for vapor-depositing the substrate 505.
  • the mask assembly 503 may include: an open mask plate 3 having at least one opening 31 for vapor deposition; and at least one shielding sheet 1 corresponding to the opening 31.
  • the area of the shielding sheet 1 is configured to be smaller than the area of the corresponding opening 31.
  • the mask assembly may further include: a carrier (for example, a tray) 2 (see FIG. 3) for carrying the masking sheet 1.
  • the carrier 2 may be provided with a recess for receiving the shielding sheet 1.
  • the shielding sheet 1 is shown as being attached to the substrate.
  • the vapor deposition apparatus 500 further includes an electromagnet 507 to provide magnetic force.
  • the electromagnet may be installed on the vapor deposition stage.
  • the material of the shielding sheet 1 may be a magnetic material.
  • the shielding piece 1 is fixed to the evaporation platform by the magnetic force between the electromagnet, simple and reliable, and easy to operate.
  • the material of the open mask 3 may be set to the same material as the shielding sheet 1. In this way, both the open mask plate 3 and the shielding sheet 1 can be fixed to the vapor deposition stage by the magnetic force between the electromagnets, which is simple, reliable, and convenient to operate.
  • the open mask plate and the shielding sheet are fixed to the evaporation stage in the same manner to cooperate with the evaporation operation, which is beneficial to simplify the overall device and facilitate operation.
  • the materials of the shielding sheet 1 and the open mask plate 3 may be, for example, stainless steel materials.
  • the vapor deposition apparatus further includes a source 509 for providing vapor deposition material to the substrate.
  • the source 509 can be used to contain the material to be evaporated, such as an organic material.
  • the source 509 also has heating means for evaporating the material to be vaporized and/or means for exhausting or guiding the gas flow.
  • each of the at least one shielding sheet is configured such that its projection on the substrate covers the corresponding through hole 511 to be formed on the substrate (shown by a dotted frame in FIG. 5 ).
  • FIG. 5 is merely exemplary, and the present disclosure is not limited to the embodiment shown in FIG. 5.
  • the orientation of the vapor deposition apparatus shown in FIG. 5 may be changed or reversed.
  • the evaporation material is an organic material
  • adhesion performance and sealing performance can be provided.
  • the adhesion between the array substrate and the counter substrate can be improved, and the problem of package leakage at the through hole of the display panel can be effectively alleviated.

Abstract

一种阵列基板的制备方法，包括：将衬底基板固定在蒸镀载台上；在衬底基板上贴附用于至少覆盖衬底基板的预设区域的遮挡片（1）；将开放式掩模板（3）与衬底基板关联地设置并对位；利用开放式掩模板（3）对贴附了所述遮挡片（1）的衬底基板进行蒸镀以形成蒸镀材料层。还包括一种显示面板及蒸镀装置。

Description

阵列基板的制备方法、显示面板及蒸镀装置
相关申请的交叉引用
本申请要求于2018年12月4日提交的中国专利申请201811476207.0的优先权，并通过引用将其全文并入在此。
技术领域
本公开涉及显示技术领域，特别涉及一种阵列基板的制备方法、显示面板及蒸镀装置。
背景技术
随着显示屏的发展，目前显示屏也会应用于钟表领域，例如，目前有些产品中，在面板的中间开孔，用于放置手表的机械指针。但是如果采用传统的蒸镀及封装技术，由于在面板的基板玻璃上蒸镀的有机材料与封装使用的Frit胶(玻璃胶)粘接性不好甚至无法粘接，导致Frit胶固化后无法使用基板玻璃与盖板玻璃贴合粘接，则会出现中间开孔位置的封装漏气问题。
发明内容
本公开根据本公开一个方面，提供了一种阵列基板的制备方法，所述制备方法包括：将衬底基板固定在蒸镀载台上；在所述衬底基板上贴附用于至少覆盖所述衬底基板的预设区域的遮挡片；将开放式掩模板与所述衬底基板关联地设置并对位；利用所述开放式掩模板对贴附了所述遮挡片的所述衬底基板进行蒸镀以形成蒸镀材料层。
在一些实施例中，所述预设区域用于在其中形成通孔，所述遮挡片的面积大于所述通孔的面积。
在一些实施例中，所述在所述衬底基板上贴附所述遮挡片包括：将所述遮挡片放于载体的固定位置；将所述载体与所述衬底基板对位，以使所述遮挡片与对应的所述预设区域对位；将所述遮挡片贴附于所述预设区域；将所述遮挡片与所述载体分离。
在一些实施例中，所述载体具有与所述衬底基板的预设区域对应的凹部；所述将所述遮挡片放于载体的固定位置上包括：将所述遮挡片置于所述载体的凹部内。
在一些实施例中，所述蒸镀载台设置有电磁体，且所述遮挡片的材料为磁性材料，所述载体的材料为无磁性高分子聚合物；所述将所述遮挡片固定于所述预设通孔区域包括：启动所述电磁体，将所述遮挡片吸附于所述衬底基板的预设通孔区域。
在一些实施例中，所述将开放式掩模板与所述衬底基板对位包括：采用所述开放式掩模板上设置的第一对位标识与所述衬底基板上的第三对位标识进行对位。
在一些实施例中，所述将所述载体与所述衬底基板对位包括：采用所述载体上设置的第二对位标识与所述衬底基板上的第三对位标识进行对位。
在一些实施例中，所述制备方法还包括：在进行所述蒸镀之后，移除所述遮挡片和所述遮挡片上的蒸镀材料层。
根据本公开一个方面，提供给了一种显示面板，包括阵列基板以及与所述阵列基板相对设置的对向基板，所述阵列基板采用如任意实施例所述的制备方法制备，所述显示面板具有贯穿所述阵列基板和所述对向基板的通孔，并且所述通孔在所述预设区域中贯穿所述阵列基板。
根据本公开一个方面，提供给了一种蒸镀装置，包括：用于承载基板的蒸镀载台；和用于蒸镀的掩模组件，其中，所述掩模组件包括：开放式掩模板，所述开放式掩模板上具有至少一个用于蒸镀的开口；至少一个遮挡片，与所述至少一个开口对应，各所述遮挡片的面积小于对应的所述开口的面积。
在一些实施例中，所述掩模组件还包括：用于承载所述至少一个遮挡片的载体，所述至少一个遮挡片设置在所述载体上的相应凹部中。
在一些实施例中，所述蒸镀装置还包括电磁体，且所述至少一个遮挡片的材料为磁性材料。
在一些实施例中，所述至少一个遮挡片的材料为不锈钢材料。
在一些实施例中，所述开放式掩模板具有第一对位标识，所述载体具有第二对位标识，所述基板具有第三对位标识，并且其中通过所述第一对位标识、第二对位标识和第三对位标识将所述开放式掩模板、所述载体和所述基板对位。
在一些实施例中，所述蒸镀装置还包括用于向所述基板提供蒸镀材料的源。
在一些实施例中，所述至少一个遮挡片中的每一个被设置为其在所述基板上的投影覆盖要在所述基板上形成的对应通孔。
附图说明
图1为本公开实施例提供的制备方法的流程示意图；
图2为本公开实施例提供的开放式掩模板的结构示意图；
图3为本公开实施例提供的托盘的结构示意图；
图4为本公开实施例提供的遮挡片的结构示意图；以及
图5示出了根据本公开实施例的蒸镀装置的示意图。
具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
根据本公开的一些实施例，提供了一种阵列基板(以及包括该阵列基板的显示面板)的制备方法。所述方法可以包括：将衬底基板固定在蒸镀载台上；在所述衬底基板上贴附用于至少覆盖所述衬底基板的预设区域的遮挡片；将开放式掩模板与所述衬底基板关联地设置并对位；利用所述开放式掩模板对贴附了所述遮挡片的所述衬底基板进行蒸镀以形成蒸镀材料层。
请参考图1，根据本公开一些实施例的阵列基板(以及包括该阵列基板的显示面板)的制备方法可以包括以下步骤：
步骤S101，将衬底基板固定在蒸镀载台上；
步骤S102，在衬底基板上贴附用于覆盖预设区域的遮挡片；
步骤S103，将开放式掩模板与衬底基板对位并固定；
步骤S104，利用开放式掩模板对贴附了所述遮挡片的衬底基板进行蒸镀。
如此，可以制备阵列基板或包括该阵列基板的显示面板。
在一些实施例中，所制备的显示面板可以包括如上制备的阵列基板以及与阵列基板相对设置的对向基板。制备完成的阵列基板和对向基板上具有贯穿两者的通孔。也即，所述显示面板可以具有贯穿所述阵列基板和对向基板的通孔。所述通孔可以形成在所述预设区域中。因此，在下文中，该预设区域也可能被称作预设通孔区域。
根据本公开的一些实施例，上述阵列基板或显示面板可以应用于穿戴设备。例如，当上述阵列基板或显示面板应用于钟表时，可以将上述显示面板作为钟表的表盘，显示面板上的通孔用于设置表针。阵列基板可以包括所述衬底基板。
在一些实现方式中，根据步骤S101，将衬底基板固定在蒸镀载台上。之后，根据步骤S102，在衬底基板的预设通孔区域贴附遮挡片1(见图3)以覆盖衬底基板的预设通孔区域。然后，根据步骤S103，将开放式掩模板3(见图2)与衬底基板对位并固定。开放式掩模板3的开口31(见图2)可以与衬底基板的预留通孔区域对应。该开放式掩模板3的 用于蒸镀的开口31的面积大于遮挡片1的面积。然后，根据步骤S104，利用开放式掩模板对贴附了所述遮挡片的衬底基板进行蒸镀。
在蒸镀时，由于遮挡片1覆盖衬底基板的预设通孔区域，可以有效避免衬底基板的预设通孔区域粘附蒸镀材料。在蒸镀材料为有机材料时，可以有效避免衬底基板的预设通孔区域粘附有机材料，从而可以使得衬底基板的预设通孔位置没有有机材料。遮挡片1的具体尺寸本实施例不限定，遮挡片的形状以及直径尺寸可以根据需要打通的通孔的形状和直径尺寸设置。在一些实现方式中，可以在衬底基板上的预设通孔位置打孔形成比遮挡片1的面积小的通孔。即，可以使通孔的直径尺寸比遮挡片1在衬底基板上的覆盖区域的直径尺寸小。如此，可以在通孔的周围会有一圈没有有机材料的环形预留区域。在后续阵列基板与对向基板进行玻璃胶封装时，位于环形预留区域的玻璃胶可以避免受有机材料影响，粘结性较好，则使阵列基板与对向基板贴合粘结性较好，可以有效缓解了显示面板的通孔处封装漏气的问题。
在一些实施例中，可以采用上述制备方法制备其中基板具有通孔的环形显示面板。
根据本公开的实施例，利用遮挡片1遮挡衬底基板的预设通孔位置，避免有机材料蒸镀到预设通孔位置，从而有效缓解或解决显示面板的通孔位置封装漏气问题。
在一些实施例中，在衬底基板的蒸镀过程中，为便于将遮挡片1固定于衬底基板的预留通孔区域，在衬底基板上贴附用于覆盖预设通孔区域的遮挡片1可以具体包括以下步骤。
将遮挡片1放于载体(例如，托盘)2的固定位置。
将托盘2与衬底基板对位，以使遮挡片1与对应的预设通孔区域相对位。例如，可以将托盘2与衬底基板对位并贴附。
将遮挡片1贴附(例如，固定)于预设通孔区域。在一些实现方式中，此时或之后，可以将遮挡片1与托盘2分离。
之后，移走托盘2。可以使托盘2脱离蒸镀区域。如此，可以利用托盘2将遮挡片1固定在衬底基板的预设通孔区域；本公开并不限于此。
衬底基板可以具有多个蒸镀区域。对应地，蒸镀用的开放式掩模板3可以有多个蒸镀用的开口31。待蒸镀的衬底基板的每个蒸镀区域可以有至少一个预设通孔区域。多个遮挡片1可以设置在托盘2上与衬底基板的预设通孔区域一一对应的位置处。多个遮挡片1可以分别固定在托盘2的预设位置。托盘2的待设置遮挡片的位置朝向待蒸镀的衬底基板(或者说，衬底基板的待蒸镀的表面)。将托盘2与待蒸镀的衬底基板对位之后，则遮挡片1也会与预设通孔区域一一对准。然后将遮挡片1贴附到预设通孔区域；此时或之后，遮挡片1被与托盘2分离。然后将托盘2移走，远离蒸镀区域。接着，进行后续利用开放式掩 模板3对待蒸镀的衬底基板进行蒸镀作业。根据本公开的实施例，可以采用托盘2将遮挡片1固定于待蒸镀的衬底基板的预留通孔区域，精确度较高，且操作简单方便。
在一具体实施例中，托盘2可以具有与衬底基板的预设通孔区域对应的凹部(例如凹陷或凹槽等)。将遮挡片1放于托盘2的固定位置上的方法具体可以包括：将遮挡片1置于托盘2的凹部内。通过在托盘2上设置凹部来盛装并固定遮挡片1，结构简单，操作便捷。
在一具体实施例中，蒸镀载台可以设置有电磁体，遮挡片1的材料可以为磁性材料，托盘2的材料可以为无磁性高分子聚合物。在该示例中，可以通过如下方式将遮挡片1固定于预设通孔区域：启动电磁体，将遮挡片1吸附于衬底基板的预设通孔区域。
在一种实施方式中，遮挡片1设置为磁性材料的遮挡片1，蒸镀用的蒸镀载台上设置有电磁体，且后续蒸镀用的开放式掩模板3的材料为磁性材料。所述磁性材料包括但不限于不锈钢。开放式掩模板3依靠与电磁体之间的磁力与蒸镀载台相固定，以利用掩模板3对在蒸镀载台上的衬底基板进行蒸镀。遮挡片1被设置为包括磁性材料，从而也可以依靠与电磁体之间的磁力贴附在衬底基板的预设通孔区域。
在一具体示例中，可以如下将遮挡片1贴附到衬底基板。在将遮挡片1放在托盘2上之后，将托盘2与衬底基板对位；之后，启动蒸镀载台上的电磁体，则遮挡片1通过与电磁体之间的磁力贴附并固定在衬底基板的预设通孔区域。由于托盘2为非磁性材料(例如，高分子聚合物材料)，没有磁性，不会被电磁体影响。在遮挡片1贴附在衬底基板上之后，移动托盘2，即可以将托盘2与遮挡片1分开。磁性材料的遮挡片1通过与电磁体之间的磁力固定于衬底基板上的预设通孔区域，方式简单可靠，且易于操作。
在一具体实施例中，遮挡片1的材料可以和开放式掩模板3的材料设置为相同。例如，遮挡片1可以设置为不锈钢材料的遮挡片1，需要说明的是，遮挡片1也可以设置为其他磁性材料；本公开并不限于这里所示的实施例。
在一些实施例中，开放式掩模板3上可以设置有对位标识(第一对位标识)32，托盘2上可以设置有对位标识(第二对位标识)21，如图2和图3所示。衬底基板上可以设置有对位标识(第三对位标识，在图中未示出)。参考图3所示，将托盘2与衬底基板对位的方法具体可以包括：采用托盘2上设置的对位标识(第二对位标识)21与衬底基板上的对位标识(第三对位标识)进行对位。衬底基板上设置有用于膜层制备的第三对位标识。，在托盘2与衬底基板进行对位时，可以利用托盘2上的第二对位标识21与衬底基板上的第三对位标识进行对位以使置于托盘2上的遮挡片1与衬底基板上预设通孔区域相对准，可以有效提高托盘2与衬底基板的对位效率以及对位精度。
在一些实施例中，参考图2所示，将开放式掩模板3与衬底基板对位具体可以包括：采用开放式掩模板3上设置的第一对位标识32与衬底基板上的第三对位标识进行对位。利用开放式掩模板3上的第一对位标识32与衬底基板上的第三对位标识进行对位，可以较快的使开放式掩模板3与衬底基板对位完成，且可以有效提高开放式掩模板3与衬底基板之间的对位精度。
在进行所述蒸镀之后，可以移除所述遮挡片和所述遮挡片上的蒸镀材料层。
本公开实施例还提供了一种显示面板，其可以包括阵列基板以及与阵列基板相对设置的对向基板。阵列基板包括衬底基板和位于衬底基板上的蒸镀材料层。所述阵列基板可以是根据本公开任意实施例的阵列基板或根据本公开任意方法实施例制备的阵列基板。蒸镀材料层采用如上述技术方案中的任意一种制备方法制备。在一些实现方式中，阵列基板和对向基板具有贯穿两者的通孔。所述通孔可以在所述预设区域中贯穿所述阵列基板。
图5示意性地示出了根据本公开实施例的一种蒸镀装置。如图5所示，蒸镀装置500可以包括载台501和用于蒸镀的掩模组件503。载台501用于承载衬底基板505以用于对基板505进行蒸镀。掩模组件503可以包括：开放式掩模板3，开放式掩模板3上具有至少一个用于蒸镀的开口31；与开口31对应的至少一个遮挡片1。遮挡片1的面积被配置为小于对应的开口31的面积。
在一些实施例中，掩模组件还可以包括：用于承载遮挡片1的载体(例如，托盘)2(见图3)。载体2上可以设有用于盛装遮挡片1的凹部。在图5中，遮挡片1被示出为已贴附到基板。
在一些实施例中，所述蒸镀装置500还包括电磁体507，以提供磁力。在一具体示例中，电磁体可以设置于蒸镀载台。遮挡片1的材料可以为磁性材料。，遮挡片1靠与电磁体之间的磁力与蒸镀载台相固定，简单可靠，且操作方便。开放式掩模板3的材料可以设置为与遮挡片1的材料相同的材料。如此，开放式掩模板3和遮挡片1两者可以靠与电磁体之间的磁力与蒸镀载台相固定，简单可靠，且操作方便。另外，开放式掩模板和遮挡片以相同方式与蒸镀载台相固定以配合蒸镀作业，有利于简化整体装置，且方便操作。具体地，遮挡片1和开放式掩模板3的材料可以为例如不锈钢材料。
在一些实施例中，所述蒸镀装置还包括用于向所述基板提供蒸镀材料的源509。如本领域技术人员将理解的，源509可以用于容纳待蒸镀的材料，例如有机材料。在一个实施例中，源509还以具有用于使待蒸镀的材料蒸发的加热部件和/或排出或引导气流的部件。
在一些实施例中，所述至少一个遮挡片中的每一个被配置为其在所述基板上的投影覆盖要在所述基板上形成的对应通孔511(在图5中以虚线框示出)。
应理解，图5所示的示意图仅仅是示例性，本公开并不限于图5所示的实施例。例如，在其他实施例中，图5所示的蒸镀装置的取向可能被改变或颠倒。
根据本公开的实施例，可以有效避免衬底基板的预设通孔区域粘附蒸镀材料。尤其是蒸镀材料为有机材料时，可以有效避免衬底基板的预设通孔区域粘附有机材料，从而可以避免后续工艺中的用于接合或密封的胶受有机材料影响。如此，可以提供粘结性能和密封性能。根据本公开的实施例，可以使阵列基板与对向基板贴合粘结性较好，可以有效缓解了显示面板的通孔处封装漏气的问题。
显然，本领域的技术人员可以对本公开实施例进行各种改动和变型而不脱离本公开的精神和范围。这样，倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (16)

  1. 一种阵列基板的制备方法，包括：
    将衬底基板固定在蒸镀载台上；
    在所述衬底基板上贴附用于至少覆盖所述衬底基板的预设区域的遮挡片；
    将开放式掩模板与所述衬底基板关联地设置并对位；
    利用所述开放式掩模板对贴附了所述遮挡片的所述衬底基板进行蒸镀以形成蒸镀材料层。
  2. 根据权利要求1所述的制备方法，其中，所述预设区域用于在其中形成通孔，所述遮挡片的面积大于所述通孔的面积。
  3. 根据权利要求1所述的制备方法，其中，所述在所述衬底基板上贴附所述遮挡片包括：
    将所述遮挡片放于载体的固定位置；
    将所述载体与所述衬底基板对位，以使所述遮挡片与对应的所述预设区域对位；
    将所述遮挡片贴附于所述预设区域；
    将所述遮挡片与所述载体分离。
  4. 根据权利要求3所述的制备方法，其中，所述载体具有与所述衬底基板的预设区域对应的凹部；
    其中，所述将所述遮挡片放于载体的固定位置上包括：
    将所述遮挡片置于所述载体的凹部内。
  5. 根据权利要求3所述的制备方法，其中，所述蒸镀载台设置有电磁体，所述遮挡片的材料为磁性材料，所述载体的材料为无磁性高分子聚合物；
    其中，所述将所述遮挡片固定于所述预设通孔区域包括：
    启动所述电磁体，将所述遮挡片吸附于所述衬底基板的预设通孔区域。
  6. 根据权利要求1所述的制备方法，其中，所述将开放式掩模板与所述衬底基板对位包括：
    采用所述开放式掩模板上设置的第一对位标识与所述衬底基板上的第三对位标识进行对位。
  7. 根据权利要求3所述的制备方法，其中，所述将所述载体与所述衬底基板对位包括：
    采用所述载体上设置的第二对位标识与所述衬底基板上的第三对位标识进行对位。
  8. 根据权利要求3所述的制备方法，还包括：
    在进行所述蒸镀之后，移除所述遮挡片和所述遮挡片上的蒸镀材料层。
  9. 一种显示面板，包括阵列基板以及与所述阵列基板相对设置的对向基板，所述阵列基板采用如权利要求1-8中任一项所述制备方法制备，，所述显示面板具有贯穿所述阵列基板和所述对向基板的通孔，并且所述通孔在所述预设区域中贯穿所述阵列基板。
  10. 一种蒸镀装置，包括：
    用于承载基板的蒸镀载台；和
    用于蒸镀的掩模组件，
    其中，所述掩模组件包括：
    开放式掩模板，所述开放式掩模板上具有至少一个用于蒸镀的开口；
    至少一个遮挡片，与所述至少一个开口对应，各所述遮挡片的面积小于对应的所述开口的面积。
  11. 根据权利要求10所述的蒸镀装置，其中，所述掩模组件还包括：
    用于承载所述至少一个遮挡片的载体，所述至少一个遮挡片设置在所述载体上的相应凹部中。
  12. 根据权利要求10所述的蒸镀装置，还包括电磁体，且所述至少一个遮挡片的材料为磁性材料。
  13. 根据权利要求12所述的蒸镀装置，其中，所述至少一个遮挡片的材料为不锈钢材料。
  14. 根据权利要求11所述的蒸镀装置，其中，所述开放式掩模板具有第一对位标识，所述载体具有第二对位标识，所述基板具有第三对位标识，并且
    其中通过所述第一对位标识、第二对位标识和第三对位标识将所述开放式掩模板、所述载体和所述基板对位。
  15. 根据权利要求10所述的蒸镀装置，还包括用于向所述基板提供蒸镀材料的源。
  16. 根据权利要求10所述的蒸镀装置，其中，所述至少一个遮挡片中的每一个被设置为其在所述基板上的投影覆盖要在所述基板上形成的对应通孔。
PCT/CN2019/105975 2018-12-04 2019-09-16 阵列基板的制备方法、显示面板及蒸镀装置 WO2020114036A1 (zh)

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