WO2020080198A1 - 成膜装置 - Google Patents

成膜装置 Download PDF

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Publication number
WO2020080198A1
WO2020080198A1 PCT/JP2019/039685 JP2019039685W WO2020080198A1 WO 2020080198 A1 WO2020080198 A1 WO 2020080198A1 JP 2019039685 W JP2019039685 W JP 2019039685W WO 2020080198 A1 WO2020080198 A1 WO 2020080198A1
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WO
WIPO (PCT)
Prior art keywords
film forming
substrate
electron
holding surface
forming apparatus
Prior art date
Application number
PCT/JP2019/039685
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English (en)
French (fr)
Japanese (ja)
Inventor
亦周 長江
詩流 尹
図騰 馬
充祐 宮内
Original Assignee
株式会社シンクロン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社シンクロン filed Critical 株式会社シンクロン
Priority to JP2020542026A priority Critical patent/JP6859007B2/ja
Publication of WO2020080198A1 publication Critical patent/WO2020080198A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment

Definitions

  • the present invention relates to the field of thin film formation, and particularly to a film forming apparatus.
  • a vapor deposition device ion auxiliary vapor deposition device
  • a vapor deposition device that densifies a vapor deposition layer deposited on a substrate by irradiating ions when a thin film material is evaporated on the surface of the substrate in a vacuum container.
  • the ion gun irradiates the substrate with low-energy gas ions
  • the neutralization gun irradiates the substrate with neutralizing electrons (electrons) to neutralize the charge offset in the substrate due to the gas ions.
  • it is possible to produce a dense film with the kinetic energy of gas ions for example, Patent Documents 1 and 2).
  • the high-refractive index substance and the low-refractive index substance are alternately evaporated by a plurality of evaporation sources and stacked to obtain an antireflection film including a plurality of layers.
  • argon ions and oxygen ions irradiated from an ion gun simultaneously densify the evaporated material attached to the substrate, and at the same time, The neutralizing electrons emitted from the neutralizing gun prevent the substrate from being charged.
  • the conventional substrate holder has a region that is not covered by the irradiation region of the electron source, and the region of the substrate holder that is irradiated by the electron source (the lower shaded region) is negatively charged and is not irradiated ( It has been discovered that the positively charged region (the deeper region of the color) is irradiated with ions, which creates regions with different potentials in the substrate holder, resulting in abnormal discharge and affecting the film formation quality. .
  • a vacuum container a substrate holder having a substrate holding surface for holding a substrate, which is located in the vacuum container; a film forming unit for forming a thin film on the substrate, which is located in the vacuum container; An irradiation unit for irradiating particles to the substrate holder, which is located in a vacuum container, and the irradiation unit causes the substrate holding surface to have a single potential.
  • the single potential comprises one of a negative potential, a positive potential and a zero potential.
  • the irradiation unit is an ion source located in the vacuum container for emitting ions to the substrate, and an electron source located in the vacuum container for emitting electrons to the substrate. And, including.
  • the irradiation area of the substrate holding surface by the ion source is located within the irradiation area of the substrate holding surface by the electron source.
  • the electron source irradiates the entire area of the substrate holding surface, and the ion source irradiates a partial area of the substrate holding surface.
  • the electron source is located within the projection range of the substrate holding surface along the vertical direction of the vacuum container or the rotation axis direction of the substrate holder.
  • the vacuum container is provided with an exhaust unit, and the electron source is provided in proximity to an intermediate position of the exhaust unit along the movement direction of the substrate holder.
  • the film forming means includes a vapor deposition source having two or more electron guns, and the electron source is located between the two electron guns.
  • the film forming means includes a vapor deposition source having two or more electron guns, and in the two electron guns, one of them is provided along a direction of a connecting line between the two electron guns.
  • the distance between the electron gun and the electron source and the distance between the other electron gun and the electron source are both smaller than the distance between the two electron guns.
  • the ion source is located within the projection range of the substrate holding surface along the vertical direction or the rotation axis direction of the substrate holder.
  • the film forming apparatus further includes adjusting means for adjusting a radiation parameter of the electron source, and by adjusting a radiation parameter of the electron source, the electron is emitted from the electron source to the substrate holding surface.
  • Adjusting the electron density, the emission parameters include at least one of position, emission diameter, emission shape, orientation, bias current, and number of the electron sources.
  • the film forming apparatus further includes a potential detection unit, the potential detection unit can detect a potential state of the substrate holding surface, and the electron source is configured to detect the substrate based on the potential state.
  • the electron density emitted to the holding surface can be adjusted.
  • the effects of the present invention are as follows.
  • the film forming apparatus according to the present invention while making the electric potential state of the substrate holding surface a single electric potential by the irradiation means, it becomes difficult for regions having different electric potential states to exist, and further, generation of abnormal discharge in the substrate holder is suppressed.
  • the stability of the thin film formation process can be guaranteed, and the film formation quality can be improved.
  • Features described and / or shown in one embodiment are used in the same or similar manner in one or more other embodiments, combined with features in other embodiments, or characterized in other embodiments. Can be replaced.
  • the term "comprise / include” as used herein refers to a feature, an entire member, a step or the presence of one or more other features, an entire member, a step or the presence / addition of a member. Do not exclude.
  • FIG. 7 is a distribution diagram of charges on a substrate holding surface. It is a structural schematic diagram of the film-forming apparatus provided in this embodiment.
  • FIG. 3 is a charge distribution diagram of a substrate holding surface in the film forming process of FIG. 2. 3 is a simplified schematic plan view of FIG. 2.
  • FIG. 3 is a simplified schematic plan view of FIG. 2.
  • a film forming apparatus 1 is provided in the embodiment of the present application.
  • the film forming apparatus 1 is used for forming a thin film (the thin film may include a thin film such as an antifouling film or a hard film), and the substrate 4 with the thin film is a touch used in smartphones and tablet computers. It is applied to screens, displays, optical elements, satellite equipment, etc.
  • the film forming apparatus 1 forms a thin film on a vacuum container 2, a substrate holder 3 for holding a substrate 4 located inside the vacuum container 2, and a substrate 4 located inside the vacuum container 2.
  • the vacuum vessel 2 is the well-known film forming apparatus 1, is a generally used stainless steel vessel having a substantially cylindrical shape, and has a ground potential.
  • the vacuum container 2 provides a vacuum chamber for forming a thin film.
  • the vacuum chamber is formed inside the vacuum container 2.
  • the vacuum container 2 is provided with an exhaust port (exhaust part), and an exhaust mechanism is connected through this exhaust port.
  • the exhaust mechanism can exhaust the inside of the vacuum chamber by communicating with the vacuum chamber through the exhaust port, and the vacuum container 2 thereby forms the vacuum chamber on its inner wall.
  • the exhaust mechanism (not shown) may be a vacuum pump, and by operating the vacuum pump, the inside of the vacuum chamber becomes a predetermined pressure (for example, about 1 ⁇ 10 ⁇ 4 Pa to 3 ⁇ 10 ⁇ 2 Pa). Exhaust to.
  • the substrate holder 3 is provided above the vacuum chamber.
  • the substrate holder 3 rotates about one rotation axis.
  • the substrate holder 3 (that is, the holding mechanism of the substrate 4) may be a dome-shaped member made of stainless steel that is rotatably held about a vertical axis, and may be an output shaft of a motor (moving mechanism). Connected.
  • the substrate holder 3 may be held on the upper side inside the vacuum container 2 along the vertical axis.
  • the bottom surface (lower surface) of the substrate holder 3 is the substrate holding surface 12.
  • two or more substrates 4 are supported on the substrate holding surface 12, so that a large amount of film is formed and applied to industrial manufacturing.
  • an opening is provided at the center of the substrate holder 3 of the present embodiment, and the crystal monitor 10 (also referred to as a crystal film thickness meter) may be arranged there.
  • the crystal monitor 10 the resonance frequency is changed by depositing a vapor deposition material (evaporation material of the film forming material) on the surface thereof, and based on the change of the resonance frequency, it is formed on the surface of the substrate 4 by the film thickness detection unit.
  • the physical film thickness is detected.
  • the detection result of the film thickness may be transmitted to the controller (not shown).
  • An electric heater 11 (heating means) is arranged above the vacuum chamber so as to wrap the substrate holder 3 from above, and specifically, a filament heater may be used.
  • the temperature of the substrate holder 3 is detected by a temperature sensor such as a thermocouple, and the result is sent to the controller.
  • the controller controls the opening / closing state of the flap of the vapor deposition source 5 described later based on the output from the film thickness detection unit, and appropriately controls the film thickness of the thin film formed on the substrate 4. Further, the controller controls the electric heater 11 based on the output from the temperature sensor, and appropriately manages the temperature of the substrate 4. Further, the controller further manages the start and stop of the operation of the vapor deposition source 5.
  • the film forming means is arranged below the vacuum chamber.
  • the film forming means may be a film forming source.
  • the vapor deposition source 5 may be a vapor deposition source 5 of a resistance heating type (the resistance heating type may be a direct heating type, an indirect heating type, etc.).
  • the vapor deposition source 5 is provided with a crucible 5b and a flap 5a, the crucible 5b is provided with a concave groove for placing a film forming material on the upper part thereof, and the flap 5a is formed from the crucible 5b in the direction of the substrate 4 to evaporate all the film forming material. It is provided so as to be openable and closable at a position where it blocks the discharge of.
  • the flap 5a is controlled to open and close according to a command from the controller.
  • the vapor deposition source 5 is not limited to the resistance heating type, and may be the electron beam heating type vapor deposition source 5.
  • the vapor deposition source 5 when the vapor deposition source 5 is in the electron beam heating mode, the vapor deposition source 5 includes the same crucible 5b and flap 5a as described above, and the electron beam (e An electron gun 5c for irradiating ⁇ ) and evaporating it may be further provided with an electron gun power source (not shown).
  • the electron gun 5c may be disposed below the inside of the vacuum container 2.
  • the film forming means may include the vapor deposition source 5 having two or more electron guns 5c and 5c '.
  • a thin film may be applied (coated) on the substrate 4 after the film formation, and the thin film may have an (organic) silicon compound component.
  • the thin film is formed by the below-described silicon compound on the film formation surface of the substrate 4 (the substrate 4 may be transparent) by the following hydrolysis-condensation reaction, and has water repellency and oil repellency (
  • the thin film may be an antifouling film, which may include an oleophobic film, an oil repellent film, a hydrophobic film, etc.).
  • the irradiation unit includes an ion source 6 located in the vacuum container 2 for irradiating the substrate 4 with ions.
  • a shutter 6a that can be opened and closed is attached above the ion source 6.
  • the shutter 6a is appropriately opened and closed by a controller (not shown).
  • the ion source 6 is a device that emits ions toward the substrate 4, and induces charged ions (O 2 + , Ar + ) by plasma of a reactive gas (for example, O 2 ) or a rare gas (for example, Ar). Then, it is accelerated by the acceleration voltage and emitted to the substrate holder 3 (substrate 4).
  • the ion source 6 may be a device such as an ion gun.
  • the ions emitted by the ion source 6 can densify the vapor deposition material attached to the substrate 4 and improve the performance of the thin film.
  • the irradiation area of the substrate holding surface 12 by the ion source 6 is located within the irradiation area of the substrate holding surface 12 by the electron source 8.
  • the ion source 6 irradiates a partial area of the substrate holding surface 12.
  • the ion source 6 is provided so as to be offset from the rotation axis of a part of the substrate holder 3. As shown in FIG. 4, the ion source 6 is located within the projection range of the substrate holding surface 12 along the vertical direction or the rotation axis direction of the substrate holder 3.
  • the irradiation means includes an electron source 8 located in the vacuum container 2 for emitting electrons into the vacuum container 2.
  • the electron source 8 is a device that emits electrons (e ⁇ ) toward the substrate 4.
  • the electrons are induced by plasma of a rare gas such as Ar, accelerated by an accelerating voltage, and emitted.
  • the electrons emitted by the electron source 8 neutralize the ions attached to the surface of the substrate 4.
  • the ion source 6 and the electron source 8 are arranged on the bottom surface of the vacuum container 2.
  • the electron source 8 is closer to the rotation axis of the substrate holder 3 than the ion source 6 in the horizontal direction (direction perpendicular to the rotation axis of the substrate holder 3).
  • the electron source 8 is located on one side of the rotation axis.
  • the angle between the direction of the electron source 8 (electron emission direction) and the rotation axis is an acute angle.
  • the orientation of the electron source 8 and the axis of rotation are not parallel or perpendicular.
  • the ion source 6 is located on one side of the rotation axis.
  • the angle between the orientation of the ion source 6 and the axis of rotation is an acute angle.
  • the ion source 6 of the present embodiment operates toward the substrate holder 3, only a part of the ion beam can irradiate a partial region of the substrate holding surface 12 (for example, curvature of electrodes), arrangement, and / Or arrange based on orientation.
  • a partial region of the substrate holding surface 12 for example, curvature of electrodes
  • the potential state of the substrate holding surface 12 is made to be a single potential by the irradiation means, the regions having different potential states are reduced, and further, abnormal discharge is suppressed from occurring in the substrate holder 3, and the thin film formation process is performed. It is possible to guarantee stability and improve film formation quality.
  • the single potential may be one of negative potential, positive potential and zero potential.
  • the irradiation means can bring the potential state of the substrate holding surface 12 to a negative potential.
  • the potentials may be different in different regions on the substrate holding surface 12, and for example, when the substrate holding face 12 is in a positive potential state, the positive potential values in different regions may be different. When the substrate holding surface 12 is in a negative potential state, the negative potential values of different regions may be different.
  • the irradiation means is a radiation parameter for irradiating the substrate holding surface 12 from the ion source 6 and the electron source 8, for example, the position, orientation, radiation port shape, bias current, etc. of the ion source 6 and / or the electron source 8.
  • the electric potential state of the substrate holding surface 12 is held at a single electric potential, the occurrence of abnormal discharge can be avoided.
  • the electron source 8 is provided within the projection range of the substrate holding surface 12 (substrate holder 3) and at the intermediate position of the exhaust port (exhaust part) of the vacuum container 2. By providing them close to each other, the directivity of electrons emitted from the electron source 8 is improved, and the charged state of the substrate holding surface 12 is made constant (preferably negatively charged) during the film formation process. Further, the maximum value of the bias current of the electron source 8 is increased to bring the substrate holding surface 12 into a negatively charged state (negative potential state).
  • the film forming apparatus 1 further includes potential detecting means, and the potential detecting means can detect the potential state of the substrate holding surface 12.
  • the potential detection means may include one or more Faraday cups located on the substrate holder 3.
  • the potential state of the substrate holding surface 12 is measured with a Faraday cup, and the plurality of black points are different potential measurement points.
  • FIG. 3 shows a potential state diagram of the substrate holding surface 12 of the film forming apparatus 1 shown in FIGS. 2 and 4, and it can be seen that all the colors of the entire potential of the substrate holding surface 12 are light (in the figures, the lighter the color, the lighter the color). , Indicates that the potential is low), and exhibits a single negative potential state.
  • the potential state of the substrate holding surface 12 can be easily controlled, and in order to obtain a desired potential state, the electron source 8 can adjust the electron density emitted to the substrate holding surface 12 according to the potential state.
  • the potential detecting means can detect the potential states of different regions of the substrate holding surface 12, and when positive and negative potentials exist in the potential states of different regions of the substrate holding surface 12, the electron source 8 adjusts the emitted electron density. By doing so, the substrate holding surface 12 can be brought to a single potential state.
  • the substrate holding surface 12 (substrate holder 3) is located within the irradiation area of the electron source 8.
  • the potential state of the substrate holder 3 (substrate holding surface 12) can be set to a negative potential. Since the entire substrate holder 3 is located within the irradiation area of the electron source 8, the ions existing within the coverage of the entire substrate holder 3 can be neutralized by the electrons, and the electrons are continuously supplied.
  • a negative potential state (that is, the entire substrate holder 3 is a single potential) is made in the entire substrate holder 3 so that regions having different potential states are unlikely to exist, and further abnormal discharge is suppressed in the substrate holder 3 to form a thin film forming process. Guarantee the stability of and improve the film quality.
  • the electron source 8 irradiates the entire area of the substrate holding surface 12. In this way, the ions existing within the coating range of the entire substrate holder 3 can be neutralized by the electrons, and the electrons are continuously supplied to bring the entire substrate holder 3 into the negative potential state.
  • the electron source 8 When the electron source 8 is located outside the projection range of the substrate holding surface 12, the electron source 8 deviates far from the rotation axis and it becomes difficult to irradiate the entire substrate holding surface 12, and at the same time, the substrate holding surface 12 becomes It was thought that if it is located in a region far away from the source 8, it is difficult to be covered or the irradiated electron density is low and it is difficult to form a single potential state.
  • the ion source 8 irradiates the whole of the substrate holding surface 12 to form a single potential, so that the ion source 8 is moved along the vertical direction or the rotation axis direction of the substrate holder 3. It is located within the projection range of the substrate holding surface 12. The distance between the electron source 8 and the rotation axis is smaller than the radius of the substrate holding surface 12.
  • the vacuum container 2 is provided with an exhaust unit.
  • the electron source 8 is provided close to an intermediate position along the movement direction of the substrate holder of the exhaust unit.
  • the film forming means includes a vapor deposition source 5 having two or more electron guns.
  • the electron source 8 is located between the two electron guns 5c and 5c '.
  • the exhaust unit may include the exhaust port communicating with the inside of the vacuum container 2.
  • the exhaust side of the vacuum container 2 is formed, and the one side facing the exhaust side is the door side of the vacuum container 2. This door side is opened for convenient operation in the vacuum and for loading / unloading the substrate 4.
  • the exhaust port has a long hole structure on one side of the vacuum container 2.
  • the electron source 8 is close to the intermediate position of the exhaust port.
  • the electron source 8 may also be provided near the intermediate position on the exhaust side.
  • the direction of the connecting line between the two electron guns 5c and 5c ′ (the straight line connecting the positions of the electron guns 5c and 5c ′)
  • the distance between one of the electron guns and the electron source 8 and the distance between the other electron gun and the electron source 8 are smaller than the distance between the two electron guns. That is, the distance between one electron gun 5c of the two electron guns 5c and 5c 'and the electron source 8 and the distance between the other electron gun 5c' of the two electron guns 5c and 5c 'and the electron source 8. Is smaller than the distance between the two electron guns 5c, 5c '.
  • the electron source 8 is closer to the exhaust than the two electron guns.
  • the substrate holding surface 12 is set to a single potential state, Abnormal discharge can be avoided.
  • the potential state of the substrate holding surface 12 may be as shown in FIG.
  • the electron source 8 projects the substrate holding surface 12 along the vertical direction or the rotation axis direction of the substrate holder 3. Located within range.
  • the electron source 8 of the present embodiment emits electrons toward the substrate holder 3, only a part of the electron beam can irradiate the entire area of the substrate holding surface 12 (for example, curvature of electrodes), arrangement. And / or based on orientation.
  • the irradiation unit can adjust the potential state in the substrate holder 3.
  • the irradiation unit can change the potential state of the substrate holder 3 by changing the area of the irradiation region, the positions of the electron source 8 and / or the ion source 6, and the like.
  • the irradiation means adjusts the potential state in the substrate holder 3 by being arranged so that the particle density on the substrate holding surface 12 can be adjusted. At least one of the electron source 8 and the ion source 6 is arranged so that the particle density on the substrate holding surface 12 can be adjusted.
  • the film forming apparatus 1 may include a position adjusting member that is connected to the electron source 8. By adjusting the position of the electron source 8 by using the position adjusting member, the density of electrons emitted from the electron source 8 to the substrate holding surface 12 can be adjusted. Can be adjustable. Among them, the position adjusting member makes it possible to adjust the horizontal position and / or the height position of the electron source 8 with respect to the ion source 6.
  • the position adjusting member includes a mounting hole located at the bottom of the vacuum container 2 and a connecting bolt that connects the electron source 8 and the mounting hole.
  • the electron source 8 is positioned via the connection between the connecting bolt and the mounting hole. Is adjustable.
  • the mounting hole is a long hole. Further, the number of mounting holes is plural. Since the different mounting holes are distributed in different positions in the vacuum container 2, the electron source 8 is connected to the different mounting holes via the connection bolts, and different fixing positions are adjusted.
  • the film forming apparatus 1 includes an orientation adjusting unit that adjusts the orientation of the electron source 8.
  • the orientation adjusting means adjusts the orientation of the electron source 8 so that the density of electrons emitted from the electron source 8 to the substrate holding surface 12 can be adjusted.
  • a first support structure 9 (mounting base) is provided at the bottom of the electron source 8, and the first support structure 9 can mount the electron source 8 on the vacuum container 2.
  • the first support structure 9 can change the direction of the electron source 8.
  • a second support structure 7 (mounting base) is provided at the bottom of the ion source 6, which allows the ion source 6 to be mounted on the vacuum vessel 2.
  • the second support structure 7 can change the orientation of the ion source 6.
  • any of the numerical values quoted in the text include all lower and upper values that increase in one unit from the lower limit to the upper limit. It suffices if there is an interval of at least two units between them. For example, if the number of one member or the value of a process variable (for example, temperature, pressure, time, etc.) is 1 to 90, preferably 20 to 80, more preferably 30 to 70, Also, the values such as 15 to 85, 22 to 68, 43 to 51, 30 to 32, etc. are explicitly listed. For values less than one, one unit is appropriately considered to be 0.0001, 0.001, 0.01, 0.1. These are merely examples which are intended to be stated explicitly and all possible combinations of the numerical values listed between the lowest and the highest values are considered to be stated explicitly in a similar manner in the description. To be

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
PCT/JP2019/039685 2018-10-15 2019-10-08 成膜装置 WO2020080198A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2020542026A JP6859007B2 (ja) 2018-10-15 2019-10-08 成膜装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201821666566.8U CN209065995U (zh) 2018-10-15 2018-10-15 成膜装置
CN201821666566.8 2018-10-15

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WO2020080198A1 true WO2020080198A1 (ja) 2020-04-23

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CN (1) CN209065995U (zh)
TW (1) TWI720651B (zh)
WO (1) WO2020080198A1 (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007204799A (ja) * 2006-01-31 2007-08-16 Showa Shinku:Kk 真空装置および成膜方法
WO2013046918A1 (ja) * 2011-09-30 2013-04-04 株式会社シンクロン 成膜方法及び成膜装置
JP2017214607A (ja) * 2016-05-30 2017-12-07 コニカミノルタ株式会社 光反射鏡の製造方法及び蒸着装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6533511B2 (ja) * 2015-06-17 2019-06-19 株式会社シンクロン 成膜方法及び成膜装置
JP6392912B2 (ja) * 2017-01-31 2018-09-19 学校法人東海大学 成膜方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007204799A (ja) * 2006-01-31 2007-08-16 Showa Shinku:Kk 真空装置および成膜方法
WO2013046918A1 (ja) * 2011-09-30 2013-04-04 株式会社シンクロン 成膜方法及び成膜装置
JP2017214607A (ja) * 2016-05-30 2017-12-07 コニカミノルタ株式会社 光反射鏡の製造方法及び蒸着装置

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CN209065995U (zh) 2019-07-05
TWI720651B (zh) 2021-03-01
TW202035744A (zh) 2020-10-01
JP6859007B2 (ja) 2021-04-14

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