WO2019218775A1 - 一种led阵列装置的制造方法 - Google Patents

一种led阵列装置的制造方法 Download PDF

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Publication number
WO2019218775A1
WO2019218775A1 PCT/CN2019/079817 CN2019079817W WO2019218775A1 WO 2019218775 A1 WO2019218775 A1 WO 2019218775A1 CN 2019079817 W CN2019079817 W CN 2019079817W WO 2019218775 A1 WO2019218775 A1 WO 2019218775A1
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layer
led
manufacturing
led array
array device
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PCT/CN2019/079817
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English (en)
French (fr)
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沈奕
吕岳敏
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汕头超声显示器技术有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Definitions

  • the invention relates to a method for manufacturing an LED array device, and belongs to the technical field of LED display, especially micro LED display.
  • a micro LED display such as a micro-LED or a mini-LED is generally a display constructed by transferring and bonding a large number of tiny light-emitting diodes (LEDs) to a substrate of a driver circuit.
  • the micro LED display has the advantages of good display performance (active illumination, high brightness, high contrast, high color gamut, wide viewing angle, fast response), energy saving, long working life, etc., and is considered to be a more advanced display than liquid crystal display and organic light emitting display. Types of.
  • a large number of tiny LED devices are transferred and bonded to a base layer of a driving circuit to constitute an LED array device as a main body of the micro LED display, and generally one or more (or batches) of LED devices are transferred by using a transfer head.
  • the method to achieve, its transfer speed is slow, low efficiency, it is difficult to achieve mass production of micro LED display.
  • the technical solution adopted is as follows:
  • a method of manufacturing an LED array device characterized in that:
  • the LED device having a first electrode and a second electrode respectively on an inner side and an outer side, wherein the first electrode is provided with a first magnetic portion made of a soft magnetic metal, the first The surface of the magnetic portion is provided with a first bonding layer;
  • the outer side surface of the mother board is a first board body surface, the first board body surface defines a plurality of bonding positions constituting an array, and the bonding position is provided with a hard magnetic material a second magnetic portion; and, the following processing steps are employed:
  • Step 1 providing a base layer without magnetic insulation on the surface of the first plate body
  • Step 2 providing a driving circuit layer on the base layer, the driving circuit layer comprising a plurality of pads and a driving circuit connected to the pads, wherein the pads are above a bonding position of the motherboard, at least The surface is provided as a second bonding layer;
  • Step 3 Dispersing the LED device on the driving circuit layer, and the first magnetic portion is subjected to a magnetic field force of the second magnetic portion on the pad to cause the LED device to be positioned and adsorbed onto the pad and the first magnetic portion a bonding layer and a second bonding layer are in close contact;
  • Step 4 bonding the first bonding layer and the second bonding layer, whereby the pad is electrically connected to the first electrode of the LED device;
  • Step 5 separating the base layer and the mother board to obtain an LED array device.
  • the LED device may be an inorganic LED device of various emission wavelengths in a series of GaP, GaAs, GaN, or the like.
  • the LED device is a vertical structure LED device, that is, the P pole and the N pole of the LED device (ie, the first and second electrodes) are respectively on opposite sides of the device.
  • the first electrode may be a doped semiconductor layer (such as a P-type layer) exposed on one side of the LED device, or may be a conductor film layer covered on the doped semiconductor layer on one side of the LED device (eg, covered in a P-type) a Ni film or a Ti film on the layer;
  • the second electrode is generally a doped semiconductor layer (such as an N-type layer) exposed on the other side of the LED device, or may be covered with a doped semiconductor on the other side of the LED device.
  • a transparent conductive film layer on the layer (such as an ITO film overlying the N-type layer).
  • the semiconductor layer of the vertical structure LED device (such as P-type layer, N-type layer, quantum well layer) is generally grown on an epitaxial substrate (such as sapphire) by epitaxial method (such as epitaxy by MOCVD), and finally by laser stripping (generally A stripping method such that the laser penetrates the epitaxial substrate to the bottom of the semiconductor layer to cause decomposition of the bottom thereof, etc.) is peeled off from the epitaxial substrate; thus, the first magnetic portion and the first bonding layer of the LED device can be peeled off before the LED is peeled off First, it is placed on the first electrode (finally, the inside of the LED device) by vapor deposition, magnetron sputtering, electroplating, sputtering, etc., and finally the semiconductor layer and the metal film layer are peeled off from the epitaxial substrate to obtain A vertical structure LED device having a first magnetic portion and a first bonding layer on the inside.
  • the first magnetic portion is a soft magnetic metal, which can ensure that the first magnetic portion has conductivity for forming a connection of the first electrode, and it has no magnetic field in a general state (soft magnetic metal has low coercive force and high
  • the magnetic permeability of the metal which is generally in a demagnetized state without a magnetic field, ensures that the individual LED devices do not attract each other and cause agglomeration.
  • the first magnetic portion is preferably a soft magnetic metal layer (relative magnetic permeability > 100) composed of a magnetic metal such as iron, nickel, manganese or the like (such as pure iron) or an alloy thereof (such as silicon steel).
  • the first magnetic portion can be formed by a plating method to obtain a larger thickness (1 to 200 ⁇ m), and the first magnetic portion is designed to be thicker, and the first and second magnetic portions can be improved not only in the third step.
  • the magnetic attraction, during the stripping of the LED device from the epitaxial substrate, the first magnetic portion can also be used to support the semiconductor layer to avoid its breakage during the stripping process.
  • the first magnetic portion is preferably formed by a patterning method, for example, a photosensitive resin may be coated on the first electrode and patterned into a plurality of block-shaped holes exposing the first electrode, through the first electrode The electroplating is performed to grow a plating film of a soft magnetic metal in a block-like hole of the photosensitive resin, and finally the photosensitive resin is peeled off to leave a block-shaped first magnetic portion.
  • a patterning method for example, a photosensitive resin may be coated on the first electrode and patterned into a plurality of block-shaped holes exposing the first electrode, through the first electrode
  • the electroplating is performed to grow a plating film of a soft magnetic metal in a block-like hole of the photosensitive resin, and finally the photosensitive resin is peeled off to leave a block-shaped first magnetic portion.
  • the semiconductor layer covered by the first magnetic portion may remain intact, and the semiconductor layer covered by the first magnetic portion will be broken (or broken in a subsequent process), forming a plurality of size profiles by A magnetic portion covers an LED device defined by a region, such as a circular LED device - preferably the LED device has a size of 5 to 800 ⁇ m.
  • the LED device can be flipped or held in the correct posture in which the first and second bonding layers are in close contact with each other, in the LED device, preferably, the first magnetic portion is at a position on the inner side of the LED device, thereby If the LED device is adsorbed in the opposite posture, the distance between the first and second magnetic layers is relatively long, and the adsorption force is weak, and it is easy to design a certain cleaning mechanism to remove it, leaving only the LED device with the correct posture. Specifically, it is preferable that the first magnetic portion is disposed on the inner side of the LED device and the thickness does not exceed 1/2 of the entire thickness of the LED device. In the LED device, the thickness of the semiconductor layer and the first electrode is difficult to adjust arbitrarily.
  • a non-magnetic metal layer is further disposed between the first magnetic portion and the first electrode, and the thickness of the non-magnetic metal layer is passed. Adjusting, it is easy to make the thickness of the first magnetic portion not exceed 1/2 of the overall thickness of the LED device, and the non-magnetic metal layer may be non-magnetic such as gold, silver, copper, aluminum, etc. (in the present specification, the relative magnetic permeability is ⁇ a material composed of a metal or an alloy of 10 is considered to be a non-magnetic material, which may be disposed on the first electrode prior to the first magnetic portion by electroplating and using the same patterning method as the first magnetic portion described above. on.
  • the first bonding layer may directly be a surface layer of the first magnetic portion (the second bonding layer needs to adopt a material having good soldering property with the first magnetic portion), or may be separately provided for bonding.
  • Membrane layer In the case where the first bonding layer is a separately provided film layer, it may be formed on the first magnetic portion by plating, sputtering, hot dip plating or the like in order not to affect the first and second magnetic layers in the third step. The magnetic attraction between them is preferably such that the thickness of the first bonding layer does not exceed 1/2 of the first magnetic portion.
  • the first bonding layer may be a low melting point metal layer or a soft metal layer to facilitate bonding of the first and second bonding layers by stepwise heating or pressure bonding in step 4.
  • the first bonding layer is a low melting point metal layer, it is preferably a metal layer of indium or tin or an alloy layer containing indium or tin as a main component; and when the first bonding layer is a soft metal layer In the case, it is preferably a soft metal layer which is easily pressure-welded such as gold or silver.
  • the first bonding layer may also preferably be a nano metal coating such as nano silver or nano gold, which can generally bond the first and second bonding layers by means of temperature rising and pressing. The required temperature and pressure are relatively low, and the process suitability is good.
  • the mother board is preferably a glass plate (such as ordinary glass, quartz glass, sapphire glass), a ceramic plate or a non-magnetic metal plate, or a composite plate body of the above materials, which can be used in the above manufacturing process.
  • the formed LED array device provides good support without affecting the magnetic field of the second magnetic portion.
  • the second magnetic portion is made of a hard magnetic material, and specifically, it may be a composite composed of an alumino-nickel-cobalt permanent magnet alloy, an iron-chromium-cobalt-based permanent magnet alloy, a permanent ferrite, a rare earth permanent magnet material, or the like.
  • the second magnetic portion is composed of a neodymium iron boron alloy.
  • the second magnetic portion is made of a neodymium iron boron alloy and has better economy.
  • the bonding position of the motherboard is provided with a receiving hole, and the second magnetic portion is embedded in the receiving hole, and the second magnetic portion is embedded in the receiving hole of the motherboard.
  • the receiving hole is formed on the first plate surface of the mother board by a laser engraving, mask etching, mask electrolysis (in the case where the mother board is a metal plate), thereby forming the accommodated
  • the hole shape and position are very precise.
  • the receiving hole may be a blind hole or a through hole penetrating the mother board.
  • the second magnetic portion may be first formed into a shape corresponding to the above-described receiving hole, such as a cylindrical shape, and then embedded in the receiving hole.
  • the second magnetic portion In the case where the size of the LED device is small and the number is large, the second magnetic portion also requires a small size and a large number, in order to more efficiently place the second magnetic portion into the receiving hole of the motherboard,
  • the second magnetic portion is formed by filling a receiving hole of the mother board with a powder of a hard magnetic material (such as a neodymium iron boron powder, which can be used as a paste), and a mother board. The high temperature treatment is performed so that the hard magnetic material powder within the receiving hole is sintered into the second magnetic portion.
  • a hard magnetic material such as a neodymium iron boron powder, which can be used as a paste
  • the powder of the hard magnetic material is press-coated or scraped onto the surface of the mother board to be squeezed into the respective receiving holes, and the mother board is baked at a high temperature of 900 to 1200 ° C. Bake (which can be simultaneously pressurized outside the accommodating hole) to sinter the hard magnetic material powder into the second magnetic portion, thereby eliminating the need to insert the second magnetic portions one by one into the accommodating holes, which is very efficient to produce.
  • the accommodating hole is a through hole, whereby the penetration of the hard magnetic material powder in the accommodating hole can be detected from the other side of the mother board (preferably Fully infiltrated and extruded from the other side).
  • the mother board is made of a non-magnetic metal or alloy having a melting point of more than 1500 ° C. Specifically, it may be titanium.
  • a metal plate made of molybdenum, tungsten, chromium or an alloy thereof.
  • the mother plate is not only mechanically strong, non-magnetic, but also resistant to high temperatures, and is suitable for the above filling and sintering processes.
  • the mother board may preferably be made of a ceramic material having high temperature resistance and good mechanical properties such as zirconia ceramic.
  • the first plate surface of the motherboard may be polished.
  • a viscosity reduction treatment on the first board surface, such as providing a silicone polymerization on the first board surface.
  • a coating or coating of a fluoropolymer formed by spraying or vacuum coating).
  • the mother board can be placed in the magnetizer to make a strong magnetic field penetrate the mother board and the second magnetic portion thereof.
  • Magnetization if the motherboard is too large, it can be magnetized by scanning).
  • the magnetic field of the magnetizer passes vertically through the mother board during magnetization, whereby the magnetic field direction of the second magnetic portion is perpendicular to the first board surface, which can penetrate more effectively above the pad.
  • the second magnetic portion Magnetizing the second magnetic portion to correctly activate the second magnetic portion after sintering or after high temperature demagnetization (such as high temperature coating and annealing in the manufacturing process of the driving circuit layer, first and second bonding layers) Residual magnetic field for temperature-increasing bonding.
  • the second magnetic portion is magnetized between step two and step three, thereby being repairable in step two or the last step four (in the case of repeated use of the mother board), the second magnetic portion being The demagnetization state that may occur when the temperature is too high.
  • a non-magnetic insulating base layer is disposed on the first plate surface of the motherboard, and the base layer as the base of the driving circuit layer is required to not shield or weaken the magnetic field of the second magnetic portion penetrating the pad and in the step
  • the separation process of the fifth has a good supporting effect on the driving circuit layer and the LED device.
  • the base layer may be selected from an insulating, non-magnetic, organic film layer having a large tensile resistance. Specifically, it may be a polyester (PET), a cycloolefin polymer (COP), or a polyimide (PI). ) a polymer film layer.
  • the base layer is a polyimide film
  • the polyimide film in various polymer film layers, not only has good tensile and chemical resistance, but also has a higher glass transition temperature (400). Above °C), it can not only withstand various high temperature conditions (such as high temperature coating, annealing) and chemical conditions (such as film etching) when the driver circuit layer is subsequently fabricated, and in step 4, it can withstand the first and second bonds.
  • the high temperature required for bonding to the bonding layer (within 350 ° C, assuming that the first and second bonding layers are bonded by temperature-melting fusion), and having less in the process of separating the base layer from the mother substrate (step 5)
  • the deformation is to avoid damage to the driver circuit layer and the device layer thereon.
  • the thickness of the polyimide layer can be set in the range of 2 to 200 ⁇ m to facilitate the penetration of the magnetic field of the second magnetic portion and maintain good mechanical strength.
  • the polyimide layer can be formed by coating a polyamic acid solution on the first plate surface of the mother plate and subjecting it to high temperature or catalytic polymerization, or by bonding the formed polyimide film through a certain adhesive layer.
  • the first board is on the body surface.
  • the pitch of the pad is 1.2 to 5.0 times the size of the LED device.
  • the driving circuit layer may be a passive driving layer or an active driving layer including active devices.
  • the driver circuit layer is a passive driver layer, it can be designed such that each pad is led out by a lead or can be designed as a cross matrix - the driver circuit layer can be designed only to form a row electrode of the cross matrix (pad Set on the row electrode), and the column electrodes constituting the cross matrix are set after the LED device is bonded.
  • the above-mentioned driving circuit layer can be formed by a patterning method such as photolithography or the like by depositing (for example, magnetron sputtering, vapor deposition) a conductive film layer on a foundation layer, in particular, a metal film layer (such as Cu, Mo-Al-Mo).
  • a patterning method such as photolithography or the like by depositing (for example, magnetron sputtering, vapor deposition) a conductive film layer on a foundation layer, in particular, a metal film layer (such as Cu, Mo-Al-Mo).
  • the driving circuit layer may include a TFT device (thin film transistor) for controlling the individual light emitting of each LED device, and specifically, the TFT device may be made of silicon (eg, ⁇ - Si), an oxide semiconductor or an organic semiconductor, in order to allow sufficient driving current when the LED device operates, the TFT device is preferably low temperature polysilicon (LTPS) or indium gallium zinc oxide (IGZO) having a high electron mobility. ) constitutes.
  • TFT device thin film transistor
  • the TFT device may be made of silicon (eg, ⁇ - Si), an oxide semiconductor or an organic semiconductor, in order to allow sufficient driving current when the LED device operates, the TFT device is preferably low temperature polysilicon (LTPS) or indium gallium zinc oxide (IGZO) having a high electron mobility. ) constitutes.
  • LTPS low temperature polysilicon
  • IGZO indium gallium zinc oxide
  • the design of the above active driving layer and the LED device driving circuit can refer to the driving design of the existing AM-OLED display device, such as using 2T1C (that is, including two TFT devices and one capacitor, generally used in the driving circuit of the AMOLED) or A pixel drive design that is more complicated (such as further adding a compensation circuit) differs only in that its pixel output is changed to the pad, and the pad can also be made of the above metal film layer (such as Cu, Mo-Al-Mo). ) formed by a patterning method such as photolithography.
  • 2T1C that is, including two TFT devices and one capacitor, generally used in the driving circuit of the AMOLED
  • a pixel drive design that is more complicated differs only in that its pixel output is changed to the pad
  • the pad can also be made of the above metal film layer (such as Cu, Mo-Al-Mo). ) formed by a patterning method such as photolithography.
  • the surface of the pad may directly serve as a second bonding layer (generally, the first bonding layer is required to be a dedicated and corresponding bonding layer), or another film layer may be disposed on the surface of the pad as the second bonding.
  • the second bonding layer may be easily welded (melted)
  • a metal layer having a good wettability during soldering, such as a plating layer of gold, silver or copper, or the second bonding layer may also be a metal layer having a low melting point.
  • the second bonding layer may also be a soft metal layer, such as a thicker pure gold plating, so that in the fourth step, the first bonding layer and the second bonding layer are mutually made by applying pressure on the outside of the LED device. Bonding.
  • the second bonding layer is a nano metal coating such as nano silver or nano gold, which can bond the first and second bonding layers by means of temperature rising and pressing, but the temperature and pressure required for bonding Both are relatively low and the process suitability is good.
  • the second bonding layer may be formed by coating (such as evaporation, magnetron bonding, electroplating) in combination with a certain pattern (can be simultaneously patterned with the pad),
  • the pattern of the pad may be formed by electroplating (electroplating may be performed by driving a circuit layer to introduce current) or by hot dip plating, and in addition, the second bonding layer may be printed with a paste of low melting point metal particles or nano metal coating. Or printed on the pad.
  • a positioning layer may be disposed on the driving circuit layer, and the positioning layer is made of an insulating material, and the thickness thereof is preferably 0.6 to 2.0 times the height of the LED device.
  • the positioning layer includes a positioning hole corresponding to the bonding position, so that in the third step, the LED device is attracted by the second magnetic portion by being embedded in the positioning hole.
  • the second magnetic portion and the first magnetic portion are offset from the upper side of the second magnetic portion and the spatial isolation of the positioning layer.
  • the distance is far, so the magnetic attraction is weak, and the translation of the LED device is not limited, so it is difficult to form a stable adsorption, only when the LED device is embedded in the positioning hole, the distance between the second magnetic portion and the first magnetic portion More recently, the translation of the LED device is limited to form a more stable adsorption, whereby the positioning layer allows the LED device to be more accurately adsorbed on the bonding position.
  • the positioning hole can be set to be 1.1 to 1.5 times the size of the LED device, and the positioning hole of the size range can play a better positioning function. If the positioning hole is set larger than the size, the positioning is not accurate, and if the positioning is performed, The hole is smaller than this size, which causes the LED device to be ineffectively adsorbed in step 3.
  • the LED device comprises at least a first LED device, a second LED device and a third LED device which are successively decreasing in size, the first LED device, the second LED device and the third LED device having different illumination colors;
  • the positioning hole includes at least a first positioning hole, a second positioning hole and a third positioning hole, wherein the first positioning hole, the second positioning hole and the third positioning hole are respectively the first LED device and the second 1.1 to 1.5 times the LED device and the third LED device; and, in step 3, the first LED device, the second LED device, and the third LED device are sequentially spread onto the driving circuit layer such that the first LED device The second LED device and the third LED device are sequentially embedded in the first opening, the second opening and the third opening.
  • the first, second, and third LED devices may be GaN, GaP, and GaAs-based LED devices that emit blue, green, and red light respectively, and the adjacent ratios of the first, second, and third LED device sizes may be set to 1.6 to 2.0 (ie, the size of the first LED device is 1.6 to 2.0 times that of the second LED device, and the size of the second LED device is 1.6 to 2.0 times that of the third LED device), and in step 3, the first LED device When being spread on the driving circuit layer, it cannot be embedded in the second and third positioning holes and can only be embedded in the first positioning hole (it needs to be occupied by the first positioning hole).
  • the second and third LED devices Only the second and third positioning holes can be sequentially inserted, whereby the LED devices of different colors are respectively embedded in the corresponding positioning holes and connected with the corresponding pads, so that the LED array device to be manufactured is colored.
  • fourth, fifth, or even more LED devices of different sizes and colors may be further disposed to further increase the color gamut range of the LED array device to be manufactured, however, excessive Color settings can make the process and pixel structure too complex.
  • the positioning layer is a photosensitive resin coating, whereby the positioning holes can be conveniently formed by a yellow light process (ie, a patterning process of exposure and development).
  • the positioning layer may also be a silicone coating, a polyimide coating or a high temperature resistant ink layer, whereby it can withstand the high temperature of bonding of the first and second bonding layers (assuming the first and second The bonding layer is bonded by a heating method, and the positioning hole can be formed by a laser engraving process, a mask etching process or a micro-nano imprint process, whereby the positional shape of the positioning hole formed is accurate, and the embedding of the LED device can be ensured. effect.
  • the positioning hole is circular
  • the LED device has a circular profile
  • the LED device is arranged to have a circular shape.
  • the contour can be embedded in the positioning hole at different angles because the efficiency of embedding the positioning hole is improved.
  • the method of spreading the LED device onto the driving circuit layer can be classified into a dry dispersion method and a wet dispersion method.
  • the dry dispersion method includes applying or spreading a dry powder composed of a large amount of LED devices on a driving circuit layer, thereby causing the LED device to be close to the pad and being adsorbed by the second magnetic portion behind the pad, and then removing the non-adsorbing Excess powder.
  • the wet dispersion method an LED device is first dispersed in a liquid to constitute a dispersion of the LED device, and the dispersion is brought into contact with the driving circuit layer, whereby the LED device in the dispersion is adsorbed onto the pad.
  • the wet dispersion method easily maintains the dispersion of the LED device by the flow of the dispersion, and easily controls the concentration of the LED device in the dispersion, which is advantageous for controlling the adsorption process of the LED device.
  • the positioning layer may also have a certain hydrophobicity, for example, such that the dispersion has a contact angle of more than 100° on the surface of the positioning layer, thereby The dispersion is repelled by the positioning layer and tends to contact the pads in the positioning holes, which facilitates guiding the LED device suspended in the dispersion to the position of the positioning holes, so that the adsorption process of the LED device is more accurate and efficient.
  • the above hydrophobic positioning layer can be made of a high temperature resistant ink having a high hydrocarbon content, and the dispersion uses water as a solvent.
  • a certain clearing mechanism is further provided to remove the poorly-adsorbed or poor-position LED device
  • the cleaning mechanism adopts, but is not limited to, the following methods: 1) using a liquid or gas pair driving circuit Flushing the surface of the layer to rinse off the poorly-adsorbed or poorly-positioned LED device; 2) applying mechanical vibration on the mother board to shake off the poorly-adsorbed or poorly-positioned LED device; 3) Applying a reverse magnetic field on the outer side of the mother board to absorb the poorly-adsorbed or poorly-positioned LED device; 4) applying a sticky substance on the outer side of the mother board to poorly adsorb or poorly position The LED device is stuck.
  • the above method or a combination thereof can effectively remove the poorly-adsorbed or poorly-positioned LED device while retaining the well-adsorbed, position-accurate LED device.
  • the bonding of the first and second bonding layers can be performed by temperature welding (such as welding using a reflow furnace) and pressure welding (such as ultrasonic welding). Or a combination of the two is realized, and thus, an LED array device based on the base layer has been formed on the mother board.
  • a second conductive layer is further covered on the second electrode to form a second electrode connection of the LED device.
  • the top conductive layer may be a transparent conductive layer, such as a sputter coating of indium tin oxide, zinc aluminum oxide or indium gallium zinc oxide, or a coating of a transparent conductive polymer (such as PEDOT), or nano silver. , transparent conductive layer such as graphene.
  • the top conductive layer may also be a patterned non-transparent conductive film partially in contact with the second electrode, such as a metal film in contact with the edge of the second electrode.
  • the LED array device further comprises a filling layer, the filling layer is fabricated after the step four, and the top conductive layer is disposed on the filling layer, and the setting step is as follows: on the positioning layer (including the LED The outer side of the device covers the fill layer, the fill layer infiltrates and fills the gap between the LED device and the alignment layer; the fill layer is cured and patterned to form a exposed exit that exposes the second electrode of the LED device; The top conductive layer is disposed on the fill layer and the exposed exit to form a second electrode connection of the LED device.
  • the fill layer is primarily used to fill the gap between the LED device and the alignment layer, thereby providing a flatter surface to facilitate placement of the top conductive layer and avoiding short circuits between the first and second electrodes.
  • the filling layer may use a coating material with better leveling property, such as an ink or a photosensitive resin, which is coated on the outer side of the positioning layer and the LED device to flow in and fill the gap between the positioning layer and the LED device. And finally cured by baking or UV curing.
  • the filling layer is a photosensitive resin coating using a photosensitive resin coating which is easily patterned by a yellow light process to form the exposed outlet.
  • the filling layer may be a black or dark photosensitive resin coating, thereby also enabling the surface of the LED array device (except the LED device) to remain black or dark, which is advantageous for improving the LED array.
  • a colorized film layer may be further disposed over the top conductive layer.
  • the LED device in the case where the LED device is a blue LED device, the LED device can be defined as a first, second, and third LED device, at least a yellow fluorescent coating is disposed on the first and second LED devices, and then red and green are The filter films are respectively disposed on the first and second LED devices; in addition, red and green color conversion layers, such as red and green phosphor coatings, may be disposed on the first and second LED devices, respectively. Or quantum dot coating.
  • the above colorized film layer can be provided by printing, printing, yellow light or the like.
  • the base layer and the mother board can be separated from each other by mechanical peeling or the like.
  • the fabricated LED array device can be directly peeled off from the mother board, or a certain strip of adhesive tape (such as ultraviolet viscous adhesive tape) can be attached to the LED array device, and then removed.
  • the mother board is torn off to avoid the LED array device being overstressed and causing the circuit layer on it to malfunction.
  • the magnetic force generated by the magnetic field generated by the second magnetic attraction portion disposed on the mother board is applied to the first magnetic attraction portion of the LED device, so that the LED device can be automatically adsorbed to the solder to be bonded.
  • the magnetic attraction between the first and second magnetic portions can not only attract the LED device to the pad, but also realize the positioning and orientation of the LED device, thereby dispersing the LED device to the mother in actual operation.
  • a huge amount of LED devices can be simultaneously transferred to the corresponding pads. This process uses a transfer head to transfer one by one (or more batches) of LED devices. The method, its huge transfer efficiency should be significantly improved.
  • the LED device since the LED device is transferred and bonded to the driving layer on the base layer, the final base layer is peeled off from the mother board, so that the mother board can be reused, thereby, in actual manufacturing. It is not necessary to repeat the production of the mother board in the process, which greatly reduces the difficulty and cost of the above manufacturing process.
  • the base layer can be made of a flexible material, the LED array device fabricated by the above manufacturing method can also be flexible, conforming to the development trend of the display technology.
  • 1 is a schematic plan view of the entire display of the first embodiment
  • FIG. 2 is a partial plan view of a pixel of the display of the first embodiment
  • FIG. 3 is a cross-sectional view showing a pixel of a display of Embodiment 1;
  • FIG. 4 is a schematic view showing the shape and film layer of the LED used in the first embodiment
  • Figure 5 is a manufacturing step (1) of the LED used in the first embodiment
  • Figure 6 is a manufacturing step (2) of the LED used in the first embodiment
  • Figure 7 is a manufacturing step (3) of the LED used in the first embodiment
  • Figure 8 is a manufacturing step (4) of the LED used in the first embodiment
  • Figure 9 is a manufacturing step (5) of the LED used in the first embodiment
  • Figure 10 is a manufacturing step (6) of the LED used in the first embodiment
  • Figure 11 is a schematic plan view of the mother board used in the first embodiment
  • FIG. 12 is a partial schematic view of a motherboard used in the first embodiment
  • Figure 13 is a schematic view showing a method of disposing a second magnetic portion of the motherboard used in the first embodiment
  • Figure 14 is a cross-sectional view showing the mother board used in the first embodiment
  • 15 is a schematic view showing a base layer formed in a manufacturing method of the first embodiment
  • 16 is a schematic view showing a display electrode in the manufacturing method of the first embodiment
  • 17 is a schematic view showing a display of a row electrode copper metal layer in the display method of the first embodiment
  • FIG. 18 is a schematic view showing a display layer formed in a manufacturing method of the first embodiment
  • 19 is a schematic view showing a display in a manufacturing method of the first embodiment
  • 20 is a schematic view showing the display of the first embodiment, in which the second magnetic portion is magnetized;
  • 21 is a schematic view showing a display device of the first embodiment in which a LED device is embedded in a positioning hole;
  • Figure 22 is a view showing a display of the first embodiment, in which a magnet is used to remove a defective LED device;
  • FIG. 23 is a schematic view of a display of the first embodiment of the LED array device (semi-finished product);
  • Figure 24 is a view showing the display of the first embodiment in which the bottom electrode connection is formed in the manufacturing method
  • Figure 25 is a schematic view showing the formation of a fill layer in the display of the first embodiment
  • 26 is a schematic view showing a display of a first electrode layer in a manufacturing method of the first embodiment
  • Figure 27 is a schematic view showing a phosphor coating layer formed in the manufacturing method of the first embodiment
  • FIG. 28 is a schematic view showing a display of the first embodiment, in which a stripping adhesive tape is used to peel the LED array device out of the mother board;
  • Figure 29 is a schematic view showing the display of the first embodiment, in which the release adhesive paper is removed;
  • Figure 30 is a schematic view showing another display of the top electrode layer in the display method of the first embodiment
  • Figure 31 is a schematic view showing an alternative embodiment of the manufacturing step (6) of the LED used in the first embodiment
  • Figure 34 is a cross-sectional view showing a sub-pixel of the display of the second embodiment
  • Figure 35 is a schematic view showing the mother board used in the second embodiment, which forms a receiving hole
  • 36 is a schematic view showing a mother board used in the second embodiment, which forms a second magnetic portion
  • 38 is a schematic view showing a display of a second embodiment in which a base layer is formed in a method of manufacturing
  • 39 is a schematic diagram of a display of a second embodiment in which a buffer layer and a driver circuit layer are formed in a method of manufacturing;
  • FIG. 40 is a cross-sectional view showing a driving circuit layer of the display of the second embodiment
  • 41 is a plan view showing a driving circuit layer of a sub-pixel of the display of the second embodiment
  • FIG. 43 is a schematic view showing a display layer of a second embodiment in which a positioning layer is formed in a manufacturing method
  • 44 is a schematic view showing a second bonding layer formed in the manufacturing method of the second embodiment
  • 45 is a schematic cross-sectional view showing a sub-pixel of the display of the second embodiment
  • Figure 46 is a view showing the display of the second embodiment, in which the second magnetic portion is magnetized
  • 47 is a schematic view showing a display of a second embodiment in which a LED device is embedded in a positioning hole
  • Figure 48 is a schematic view showing the connection of the bottom electrode in the display of the second embodiment.
  • 49 is a schematic diagram of a display of a second embodiment, in which a fill layer is formed in a method of manufacturing;
  • Figure 50 is a schematic view showing a display of a second embodiment in which a top electrode layer is formed in a method of manufacturing
  • Figure 51 is a schematic view showing a display of a second embodiment in which a colorization layer is formed in a method of manufacturing
  • Figure 52 is a view showing the display of the second embodiment, in which the peeling adhesive tape is used to peel the display out of the mother board;
  • Figure 53 is a schematic view showing the display of the second embodiment in which the release adhesive paper is removed;
  • FIG. 54 is a schematic diagram of a pixel of a display of Embodiment 3.
  • 55 is a schematic view showing a display of a third embodiment in which a blue LED device is embedded in a positioning hole;
  • Figure 56 is a schematic view showing a display of a third embodiment in which a red LED device is embedded in a positioning hole;
  • 57 is a schematic view showing a display of a third embodiment in which a green LED device is embedded in a positioning hole;
  • Figure 58 is a cross-sectional view showing a sub-pixel of the display of the third embodiment.
  • Embodiment 1 A method of manufacturing an LED display 100 is provided. As shown in FIGS. 1 and 2, the display 100 is a passively driven monochrome LED display having a pixel area of 1.61 inches and a resolution of 40 ⁇ 32.
  • the body of display 100 is an LED array 101 comprising 40 x 32 LED devices 10 arranged in a square matrix with a pitch of 0.8 mm.
  • the LED array 101 is driven by row electrodes 102 and column electrodes 103 that intersect each other, each of which has a cross-sectional structure as shown in FIG.
  • the LED device 10 is a GaN-based blue light vertical structure circular LED device having a specification diameter of 0.3 mm
  • the film layer is a first bonding layer 11 and a soft magnetic metal layer from the inside to the outside.
  • a magnetic portion) 12 a non-magnetic metal layer 13, a first electrode 14, and a semiconductor layer 15.
  • the first bonding layer 11 is a 5 ⁇ m thick tin metal layer
  • the soft magnetic metal layer 12 is a 40 ⁇ m thick iron-nickel alloy layer
  • the non-magnetic metal layer 13 is a 40 ⁇ m thick copper metal layer
  • the first electrode 14 is 100 nm thick.
  • the nickel film; the total thickness of the semiconductor layer 15 is 4 ⁇ m, which includes an N-type layer (n-GaN) 151, a multiple quantum well (MQWs) 152, and a P-type layer (p-GaN) 153 as a second electrode of the LED device.
  • n-GaN N-type layer
  • MQWs multiple quantum well
  • p-GaN P-type layer
  • the LED device 10 is suspended and dispersed in DI water to form a dispersion, and the manufacturing method thereof is as follows:
  • an N-type layer 151, a multiple quantum well layer 152, and a P-type layer 153 are epitaxially grown on the sapphire substrate 16 by MOCVD (Metal Organic Compound Chemical Vapor Deposition) to form a semiconductor layer 15, Depositing a nickel film on the P-type layer by magnetron sputtering to form a first electrode 14;
  • MOCVD Metal Organic Compound Chemical Vapor Deposition
  • a 100 ⁇ m thick photosensitive resin coating 17 is applied on the first electrode 14 by a slit coating method, and a yellow light method (including pre-curing, mask exposure, development, and hardening) is employed.
  • a film or the like process step is patterned to form a series of circular holes 171 having a diameter of 0.3 mm, wherein the first electrode 14 is exposed at the bottom of the circular hole 171, and the pitch of the circular holes 171 is 40 ⁇ m;
  • the copper metal layer 13 is plated in the circular hole 171, and the plating current and time are controlled so that the thickness of the copper metal layer 13 is 40 ⁇ m; the first electrode 14 is continued.
  • the iron-nickel alloy layer 12 is further electroplated in the circular hole, and the plating current and time are controlled so that the thickness of the iron-nickel alloy layer 12 is 40 ⁇ m; the first electrode 14 is further used as the cathode, and the tin metal layer 11 is further plated in the circular hole. , controlling the plating current and time such that the thickness of the tin metal layer 11 is 5 ⁇ m;
  • the photosensitive resin coating 17 is immersed and washed away with a fading liquid, leaving a series of bosses formed by laminating the copper metal layer 13, the iron-nickel alloy layer 12 and the tin metal layer 11. 111 (height is about 85 ⁇ );
  • a release adhesive paper 18 is attached to the surface formed by the boss 111.
  • the release adhesive tape 18 includes a PET plastic film 181 and a 10 ⁇ m thick viscosity reducing adhesive layer 182, and the viscosity reducing adhesive layer 182 can be irradiated.
  • the semiconductor layer 15 at the bottom of the stage 111 remains intact (the semiconductor layer 15 without the support of the boss 111 is mostly broken, a small portion is bonded to the edge of the LED device, and is also broken in a subsequent process), together with the boss 111
  • the stripping adhesive tape 18 is peeled off from the sapphire substrate 16 to form the LED device 10, and the residual Ga metal is decomposed by the bottom of the semiconductor layer 15 with dilute hydrochloric acid;
  • the adhesive tape 18 is irradiated from the back side by ultraviolet light 183 (ultraviolet high pressure mercury lamp) to lower the adhesive force of the viscosity lowering adhesive layer 182, and the LED device 10 is washed out with DI water 19 to form
  • the DI aqueous dispersion 191 of the LED device 10 is washed with excess DI water to remove the dust of the semiconductor layer, and the excess DI water is filtered off to obtain a dispersion of the LED device having a dispersion density of (500 to 1000)/ml.
  • the suspension of the LED device 10 can be maintained by the flow of DI water.
  • a 304 stainless steel plate having a thickness of 2 mm and a size of 370 mm ⁇ 470 mm is used as the mother board 20, and a plurality of unit regions 22 conforming to the size of the display are defined on the first board surface 21 of the mother board 20, each of which The unit area includes a pixel area 23 conforming to the display area of the display 100, and a plurality of bonding positions 24 corresponding to the center of each pixel of the display 100 are defined in each of the pixel areas 23, as shown in FIG.
  • a circular receiving hole 25 having a diameter of 400 ⁇ m and a depth of 0.5 mm was engraved in the space, and a miniature neodymium magnet 26 having a diameter of 400 ⁇ m and a height of 0.52 mm was fitted into each of the receiving holes 25, thereby forming a series of second magnetic portions.
  • the first plate body surface 21 is mechanically polished (mainly flattening the top of the neodymium magnet protrusion), and then a fluoropolymer coating layer 27 is sprayed on the first plate body surface 21, and the coating layer 27 is solidified to form the structure of FIG. The surface of the board shown.
  • a polyamic acid solution was applied onto the first plate surface 21 by a slit coating method, and heat-baked to polymerize the polyimide film 31 having a thickness of 50 ⁇ m as a base layer, as shown in FIG. As shown in FIG. 1 and FIG.
  • a Mo-Al-Mo metal film 321 as a bottom electrode layer is deposited on the base layer 31 by magnetron sputtering (ie, "molybdenum-aluminum-molybdenum-bismuth") Layer alloy film, which can also be other metal film with good conductivity) and using photolithography process (including photoresist coating, photoresist pre-curing, mask exposure of photoresist, photoresist development, metal film) The process steps of etching, photoresist fading, etc.
  • the row electrodes 32 are patterned into 32 row electrodes 32, and the row electrodes 32 have a width of 500 ⁇ m and a pitch of 300 ⁇ m, which are connected to the first lead 322 (also patterned by the bottom electrode layer). ).
  • the mother board 20 is immersed in a plating bath of copper, and the row electrode 32 is used as a cathode (each row electrode is temporarily connected to each other to facilitate connection at the time of plating, and finally cut when the die is cut into a display unit), further A 5 ⁇ m thick copper metal layer 323 was plated on the row electrodes.
  • a 100 ⁇ m thick polyimide coating 33 as a positioning layer is further printed on the first board surface 21, and the positioning layer 33 is engraved by a laser to control the power of the laser and the engraving speed at the bonding position.
  • a plurality of positioning holes 331 having a diameter of 350 ⁇ m are formed thereon and the row electrodes 32 are exposed at the bottom thereof, thereby forming pads 324 for soldering the LED devices.
  • the mother substrate 20 was immersed in a plating bath of metal tin, and the row electrode 32 was used as a cathode, and a pad metal layer 325 having a thickness of 30 ⁇ m as a second bonding layer was plated on the pad 324.
  • the mother board 20 is placed in the scanning magnetizer 261 such that the magnetic field 262 of the magnetizer 261 penetrates the mother board 20 vertically to magnetize the second magnetic portion 26.
  • the mother board 20 is fixed on a vibrating table (not shown), and the vibrating table provides lateral vibration 411 (along the mother board surface) and longitudinal vibration 412 (vertical) with a frequency of 20 to 200 Hz.
  • the mother board surface is sprayed on the first board body surface, and the first magnetic portion 12 of the LED device 10 is subjected to the magnetic field of the second magnetic portion 26 to face the mother board with the first bonding layer 11
  • the attitude of 20 (fluid resistance and magnetic attraction, which causes the LED device 10 to tend to maintain the posture) is attracted to the positioning hole 331 and embedded in the positioning hole 331 and keeps the first and second bonding layers 11, 325 in close contact with each other. .
  • the lateral vibration 411 of the vibrating table causes the LED device 10 to horizontally move on the first plate surface 21 and fall into the positioning hole 331, thereby improving the efficiency of the adsorption process of the LED device 10; the scouring action and vibration of the dispersion 191 when spraying
  • the longitudinal vibration 412 of the stage can flush and shake off the LED device with poor adsorption and poor position.
  • the mother board 20 after the completion of the adsorption passes through the gate 42 with the magnet 421 on the upper side to further adsorb the poorly-adsorbed or poorly-positioned LED device through the magnet 421 (the height of the shutter 42 can be adjusted to avoid Good LED devices are also adsorbed).
  • the above steps may be repeated to cause the LED device 10 to be sufficiently embedded in the positioning hole 331 to form the LED array shown in FIG.
  • the residual LED device dispersion on the mother board is blown off with an air knife.
  • the mother board is passed through a reflow oven at 300 ° C, so that the first and second bonding layers 11, 325 which are the same as the tin metal layer are melted and The bonding layer 43 is formed by infiltrating each other.
  • each LED device 10 is soldered to the pad 324, and its first electrode 14 forms a bottom electrode connection with the row electrode 32 of the driver circuit layer.
  • a 20 ⁇ m-thick negative black photosensitive resin layer 44 as a filling layer is further coated on the first board surface 21, which penetrates and fills the gap between the LED device 10 and the positioning hole 331 (vacuum can be evacuated)
  • the bubble in the slit is removed, and the fill layer 44 is patterned by a yellow light process to form an opening (dew outlet) 441 exposing the second electrode 153 on the top of the LED device 10.
  • an indium tin oxide film 45 as a top electrode layer is further deposited on the mother board by magnetron sputtering, and the indium tin oxide film 45 is patterned into 40 column electrodes 451 by a photolithography process.
  • the column electrode 451 is connected to the second pin 452 patterned by the indium tin oxide film 45 in the same manner as the periphery (see FIGS. 1 and 2).
  • a layer of release adhesive paper 47 is attached to the LED array device 101.
  • the release adhesive tape 47 includes a PET plastic film 471 and an ultraviolet viscosity reducing adhesive 472, as shown in FIG. 29, in the auxiliary of the release adhesive tape 47.
  • the LED array device 101 is peeled off from the mother board 20 and cut into individual display units using a die.
  • the flexible LED display 100 can be obtained by irradiating the ultraviolet light 473 to remove the release adhesive paper 47.
  • the LED array device 101 can be attached to the rigid support plate 104 (such as an aluminum plate, a stainless steel plate, or a glass plate).
  • a hard plate such as a plastic plate may be in a straight or curved shape, and then ultraviolet light is removed to remove the release tape to obtain a rigid LED display 100 fixed on the support plate.
  • the soft magnetic metal layer 12 may also be changed to a coating of pure iron or silicon steel, and the second magnetic portion 26 may also be changed to an AlNiCo permanent magnet alloy or an iron chromium cobalt permanent magnet alloy.
  • the phosphor coating 46 may be omitted to obtain a blue LED display, and the LED device 10 may also be replaced with other luminescent color LED devices such as GaP, GaAs (the ratio of the epitaxial substrate to the semiconductor layer). Corresponding changes need to be made, refer to the prior art of the light-emitting semiconductor industry, to obtain LED displays of other colors.
  • one of the first and second bonding layers 11, 325 may also be changed to a gold plating layer (such as a plating layer or a vacuum plating layer), and the gold plating layer and the tin metal layer after melting may also be It has good wettability and is easy to form welds.
  • the first and second bonding layers 11, 325 may also be changed to a gold plating layer, and the first and second bonding layers may be welded by ultrasonic welding or the like.
  • at least one of the first and second bonding layers 11 and 325 may be changed to a coating of nano silver or nano gold, and the first and second bonding layers 11 and 325 are formed by temperature-temperature welding. Welding occurs.
  • the motherboard 20 can also be changed to a glass plate, a quartz glass plate, a sapphire substrate or a ceramic plate or other non-magnetic metal plate.
  • the receiving hole 25 can be formed by laser engraving or mask etching (for example, in the case where the mother board 20 is a glass plate or a quartz glass plate, photomask etching is performed using ammonium hydrogen fluoride).
  • the locating layer 33 can also be replaced with a more flexible silicone coating or a lower cost refractory ink printing layer.
  • the positioning layer 33 can also be made of a photosensitive resin coating, and the positioning holes 331 can be formed in a yellow light process to have a more precise shape.
  • the top electrode layer 45 may also be changed to a film of a metal or alloy such as Mo-Al-Mo, which may be coated by magnetron sputtering or the like and patterned into
  • the column electrode 451 has a light exit hole 452 at the top of the LED device 10, and an edge of the light exit hole 452 is in contact with the second electrode 153 at the top of the LED device 10 to form a top electrode connection.
  • the fill layer 44 does not need to be a black photosensitive resin layer.
  • a layer of black ink may be further coated on the top electrode layer, and a black ink layer may be opened at the top of the LED to facilitate light transmission of the LED device, and the black ink layer is further It may be an ink layer that is semi-transparent and completely covers the surface of the display, which is advantageous for further reducing display reflection.
  • the LED device 10 may be dried to form a powder, and the step of spraying the LED device dispersion into a step of dispersing the LED powder (which may be driven by an air flow) may also be performed.
  • the LED device 10 is transferred to a pad 324 where air knife blowing can be used to remove the less damped LED device 10.
  • a magnet 18' may be used instead of the release adhesive paper 18.
  • the magnet 18' can be attached to the positive side of the sapphire substrate 16, and the ultraviolet laser 161 is irradiated on the bottom side of the sapphire substrate 16 to thermally decompose the bottom of the semiconductor layer 15, whereby the bonding force of the bottom of the semiconductor layer 15 is caused.
  • the LED device 10 Upon disappearing (or weakening), the LED device 10 is attracted to the magnet 18' by the magnetic force between the first magnetic portion 12 and the magnet 18' to effect peeling.
  • the LED device 10 can be directly washed out from the magnet 18' by DI water or other fluid, or the LED device 10 can be scraped off from the magnet by other mechanical means; the magnet 18' can also be an electromagnet, thereby passing The LED device is separated from the magnet by removing the magnetic field; in addition, a pad film 181' may be attached to the magnet 18', thereby adsorbing the LED device 10 on the pad film, and finally removing the magnet 18'. The LED device 10 is caused to fall off from the pad film 181'.
  • an active matrix driven color LED display 200 having a 26-inch pixel area and a resolution of 1920 ⁇ 1080 is also prepared in the second embodiment, and each pixel 201 further includes red.
  • the main body of the display 200 is an LED array 203 comprising 925 ⁇ 1080 ⁇ 4 a total of 8,294,400 LED devices 10 arranged in a square matrix, and the LED device 10 has a pitch of 150 ⁇ m.
  • the LED device 10 of the second embodiment is substantially the same as the first embodiment (refer to FIG. 4), except that the LED device of the second embodiment has a diameter of 100 ⁇ m, and the thickness of the soft magnetic metal layer and the copper metal layer are both 20 ⁇ m.
  • the first bonding layer was changed to an indium metal layer having a thickness of 3 ⁇ m.
  • the LED device is suspended in DI water to form a dispersion having a dispersion density of (1000 to 2000)/ml, and the production method thereof is also the same as in the first embodiment (the first bonding layer needs to be changed to electroplating indium).
  • the mother board is a titanium metal plate with a thickness of 0.5 mm and a size of 640 mm ⁇ 400 mm (can withstand a high temperature of 1500 ° C or higher, in addition, the mother board can also be a tungsten, a molybdenum alloy plate or a zirconia ceramic plate), in the mother board
  • the first board surface defines a unit area and a pixel area corresponding to the display, and a bonding position corresponding to the sub-pixel 202 of the display is defined in the pixel area, as shown in FIG. 35, the laser 251 is used for bonding.
  • a circular through hole 25 having a diameter of 100 ⁇ m is engraved on the bit 202, and as shown in Fig.
  • a paste 261 made of neodymium iron boron powder (particle size of 1 to 5 ⁇ m) is scraped over the first plate surface 21 And applying pressure to the paste body 261 to be squeezed through the respective receiving holes 25, the mother board 20 is placed in an oven at 110 ° C to remove moisture, and the paste remaining on both sides of the mother board 20 is polished to remove the mother board 20 at 1000. Pressure sintering is performed in a pressure sintering furnace at ° C to sinter the neodymium iron boron powder in the accommodating hole 25 to form a neodymium iron boron magnet 26 as a second magnetic portion.
  • the two plate faces of the mother board 20 are polished, and then a fluoropolymer coating 27 is sprayed on the first board face 21, thereby forming a first board face as shown in FIG.
  • a polyamic acid solution was applied onto the first plate surface 21 by a slit coating method, and hot-baked and polymerized into a polyimide film 31 having a thickness of 10 ⁇ m as a base layer, in a polyimide film.
  • a silicon nitride (SiN x ) and silicon oxide (SiO 2 ) film as a buffer layer 32 is sequentially deposited on the amine film 31 by a PECVD method, and further an LTPS array manufacturing process (such as a nine-time lithography top gate process, or a reference)
  • the prior art of flexible AM-OLEDs forms a driver circuit layer 33 on the buffer layer 32.
  • the main body of the driving circuit layer 33 is composed of a scanning line 331 (in the X direction, each pixel corresponds to two scanning lines, a total of 2160), and a data line 332 (in the Y direction, each pixel corresponds to An array of two data lines, a total of 3840) and a power line 333 (side-by-side with the data lines) (including peripheral circuits, which are not described in detail herein), wherein the pitch of the scan lines 331 and the data lines 332 Both are 150 ⁇ m.
  • Each of the sub-pixels 202 corresponds to an intersection of the array, and the circuit thereof mainly includes: a first thin film transistor (T1) 334, a second thin film transistor (T2) 335, and a capacitor C 336.
  • the gate and the source of T1 are respectively connected to the scan line 331 and the data line 332, the drain is connected to one end of the capacitor C and the gate of T2, and the other end of the capacitor C and the source of the T2 are connected to the power line 333, T2
  • the drain is connected to the pad 339, whereby T1 can be controlled by the row scan signal of the scan line 331 to write the voltage signal of the corresponding data line 332 into the capacitor C, and the gate of the T2 is held by the capacitor C within one frame.
  • the voltage controls the channel current of T2, thereby further controlling the luminance of the LED device corresponding to the sub-pixel 202.
  • the pad 339 is connected to the drain of T2 through a via 338 on the planarization layer 337, and the pad 339 is photolithographically formed by a magnetron sputtering deposited Mo-Al-Mo film.
  • the 80 ⁇ m-thick photosensitive resin coating layer 34 as a positioning layer is further coated by the slit coating method on the driving circuit layer 33, and a plurality of positioning circular holes 341 having a diameter of 110 ⁇ m are formed by a yellow light process.
  • the holes 341 correspond to the respective pads 339 to expose the pads 339 at the bottom thereof.
  • an indium metal layer 35 having a thickness of 30 ⁇ m as a second bonding layer is further electroplated on the pad 339 by electroplating.
  • a positive voltage may be applied to the scanning line 331 and the data line 332 of the driving circuit layer 33, and a negative voltage is applied to the power source line 333, thereby making the pad 339 a cathode.
  • the pixel structure of the driving circuit layer is as shown in FIG.
  • Subsequent processing steps of display 200 mainly include:
  • the display 200 is peeled off from the mother board 20 by using a release tape 47 and ultraviolet light 471.
  • the above steps (1) to (4) and (7) can be carried out in the same manner as in the first embodiment.
  • the top electrode layer 45 may also be the same transparent conductive film or patterned metal film as in the first embodiment, except that it does not need to be patterned into column electrodes.
  • a black photosensitive resin coating layer 461 having a thickness of 10 ⁇ m is disposed on the top electrode layer 45 and a plurality of circular holes 462 corresponding to the top of the LED device 10 are patterned by a yellow light process (diameter 100 ⁇ m), using the inkjet printing method, the red, quantum dot coating 4631, the green quantum dot coating 4632 and the white phosphor coating 4633 are filled in the R, G, W sub-pixels of each pixel and dried, and the B sub-pixels are not required. The coating is filled in, thereby coloring the display.
  • the driver circuit layer 33 may also adopt a further improved TFT circuit design, such as a TFT circuit with a compensation design, and specifically refer to the existing pixel circuit design of the AM-OLED.
  • the LTPS-TFT device of the driver circuit layer 33 can also be changed to an IGZO-TFT device, and reference is made to the existing IGZO-TFT array substrate manufacturing process.
  • the red light quantum dot coating 4631 and the green light quantum dot coating 4632 may be replaced with a red phosphor coating 4631' and a green phosphor coating 4632', respectively.
  • the display 300 to be fabricated in the third embodiment is substantially the same as the second embodiment, except that each pixel 301 includes one red sub-pixel (R sub-pixel) 3021 and blue sub-pixel 3022 ( B sub-pixels) and two green sub-pixels 3023 (G sub-pixels).
  • the third embodiment adopts LED devices of three colors, which are red LED 101 (GaAs LED), blue LED 102 (GaN LED) and green LED 103 (GaP LED), respectively.
  • the LED devices have diameters of 100 ⁇ m, 162 ⁇ m, and 50 ⁇ m, respectively.
  • the structure and manufacturing steps are the same as those of the LED device used in the second embodiment, and are respectively prepared as DI water dispersions 1911. 1912 and 1913.
  • the design and fabrication steps of the mother board, the base layer and the driving circuit layer of the third embodiment are basically the same as those of the second embodiment.
  • the difference is that in the positioning layer 34, the positioning circular hole is divided into a first positioning hole 3411, a second positioning hole 3412 and a third positioning hole 3413 having diameters of 110 ⁇ m, 180 ⁇ m and 55 ⁇ m, respectively.
  • it corresponds to the R sub-pixel 3021, the B sub-pixel 3022, and the G sub-pixel 3023, respectively.
  • the subsequent processing steps of the display 300 are substantially the same as those of the second embodiment.
  • the difference is that there is no need to set the colorization layer on the display, and the process of embedding the LED device in the positioning hole includes:
  • the blue LED dispersion 1912 is sprayed on the first board surface 21 in the same manner as in the first or second embodiment, so that the blue LED device 102 is in the first and second
  • the magnetic portions 12 and 26 are embedded in the second positioning holes 3412 by the magnetic field, and the first and second bonding layers 11 and 35 are kept in close contact with each other. Due to the size, the blue LED device 102 cannot be embedded in the first and third layers.
  • the red LED dispersion liquid 1911 is sprayed on the first board surface 21 in the same manner, so that the red LED device 101 is embedded under the magnetic fields of the first and second magnetic portions 12, 26. Going into the first positioning hole 3411 and keeping the first and second bonding layers 11 and 35 close to each other, since the second positioning hole 3412 is already occupied and the third positioning hole 3413 is too small, the red LED device 101 cannot be embedded. Second and third positioning holes 3412, 3413;
  • the green LED dispersion liquid 1913 is sprayed on the first board surface 21 by the same method, so that the green LED device 103 is embedded under the magnetic fields of the first and second magnetic portions 12, 26. Going to the third positioning hole 3413 and keeping the first and second bonding layers 11 and 35 in close contact with each other, since the first and second positioning holes 3411 and 3412 are already filled, they cannot be embedded in the first and second positioning holes 3411. In 3412.

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Abstract

一种LED阵列装置的制造方法，采用垂直结构LED器件和母板，LED器件设有由软磁性金属构成的第一磁性部；母板设有由硬磁性材料构成的第二磁性部，以及：在第一板体面上设置无磁性绝缘的基础层；在基础层上设置包括多个焊盘的驱动电路层，焊盘与第二磁性部相对应；将LED器件散布到驱动电路层上，其第一磁性部受到第二磁性部在焊盘之上磁场的作用力而使LED器件定位地吸附到焊盘上；使得LED器件与焊盘相互键合；使基础层与母板相互分离，得到LED阵列装置。这种方法能够更快速、高效地将巨量的LED器件转移并键合到驱动电路层上。

Description

一种LED阵列装置的制造方法 技术领域
本发明涉及一种LED阵列装置的制造方法，属于LED显示、尤其是微LED显示的技术领域。
背景技术
诸如micro-LED或mini-LED的微LED显示器一般为将巨量微小的发光二极管(LED)转移并键合到驱动电路基层上所构成的显示器。微LED显示器具有显示性能好(主动发光、高亮度、高对比度、高色域、宽视角、响应快)、节能、工作寿命长等优点，被认为是比液晶显示器、有机发光显示器更先进的显示器类型。在现有技术中，将巨量微小的LED器件转移并键合到驱动电路基层上以构成作为微LED显示器主体的LED阵列装置，一般是采用转移头对逐个(或多批)LED器件进行转移的方法来实现的，其转移速度慢、效率低，很难实现微LED显示器的量产化。
由此，在微LED显示器的制造中，如何更加高效地将巨量微小的LED器件转移并键合到驱动电路的基层上以形成LED阵列装置，是微LED显示器制造技术在目前所面临的一个重要问题。
发明内容
本发明的目的为提供一种LED阵列装置的制造方法，其能够更快速、高效地将巨量的LED器件转移并键合到驱动电路基层上，所采用的技术方案如下：
一种LED阵列装置的制造方法，其特征为：
提供多个垂直结构的LED器件，所述LED器件的内侧和外侧分别具有第一电极和第二电极，所述第一电极上设有由软磁性金属构成的第一磁性部，所述第一磁性部的表面设有第一键合层；
提供一母板，所述母板的外侧面为第一板体面，所述第一板体面上定义有构成阵列的多个键合位，所述键合位上设有由硬磁性材料构成的第二磁性部；以及，采用以下加工步骤：
步骤一、在所述第一板体面上设置无磁性绝缘的基础层；
步骤二、在所述基础层上设置驱动电路层，所述驱动电路层包括多个焊盘以及连接到所述焊盘的驱动电路，所述焊盘处于母板的键合位之上，至少其表面设置为第二键合层；
步骤三、将所述LED器件散布到驱动电路层上，其第一磁性部受到第二磁性部在焊盘之上磁场的作用力而使LED器件定位地吸附到焊盘上且使所述第一键合层与第二键合层贴紧；
步骤四、使第一键合层和第二键合层发生键合，由此所述焊盘与LED器件的第一电极构成电连接；
步骤五、使所述基础层与母板相互分离，得到LED阵列装置。
具体地，所述LED器件可以为GaP、GaAs、GaN等系列的各种发光波长的无机LED器件。所述LED器件为垂直结构的LED器件，即LED器件的P极和N极(即所述第一、二电极)分别处于器件相对的两侧。所述第一电极可以为在LED器件一侧裸露的掺杂半导体层(如P型层)，也可以为在LED器件一侧覆盖在掺杂半导体层上的导体膜层(如覆盖在P型层上的Ni薄膜或Ti薄膜)；所述第二电极一般为在LED器件另一侧裸露的掺杂半导体层(如N型层)，也可以为在LED器 件另一侧覆盖在掺杂半导体层上的透明导电膜层(如覆盖在N型层上的ITO薄膜)。垂直结构LED器件的半导体层(如P型层、N型层、量子阱层)一般采用外延法(如采用MOCVD实现外延)在外延基底(如蓝宝石)上生长而成，最后通过激光剥离(一般使激光穿透外延基底照射到半导体层的底部而使其底部发生分解)等剥离方法从外延基底上剥离出来；由此，LED器件的第一磁性部和第一键合层可以在LED剥离之前先通过蒸镀、磁控溅射、电镀、喷镀等方法设置到第一电极之上(最终为LED器件的内侧)，最后才将半导体层及上述金属膜层从外延基底上剥离下来，得到内侧带有第一磁性部和第一键合层的垂直结构LED器件。
所述第一磁性部为软磁性金属，可以保证第一磁性部具有导电性以用于形成第一电极的连接，且其在一般状态下无磁场(软磁性金属即具有低矫顽力和高磁导率的金属，其一般处于退磁状态而无磁场)，保证各个LED器件不会相互吸引而引起团聚。所述第一磁性部优选为由铁、镍、锰等磁性金属(如纯铁)或其合金(如硅钢)构成的软磁性金属层(相对磁导率>100)。优选地，第一磁性部可采用电镀方法形成，以获得较大的厚度(1～200μm)，将第一磁性部设计得较厚，不仅可以在步骤三中提高第一、二磁性部之间的磁吸力，在LED器件从外延基底上剥离的过程中，第一磁性部还可用于支撑半导体层以避免其在剥离过程中的破碎。
所述第一磁性部优选采用图形化的方法形成，例如，可在第一电极上涂布光敏树脂并将其图形化为多个裸露出第一电极的块状孔，通过在第一电极上通电电镀使软磁性金属的电镀膜层生长在光敏树脂的块状孔中，最后剥离掉光敏树脂而留下块状的第一磁性部。在半导体层的剥离过程中，第一磁性部覆盖的半导体层可以保持完整，而无第一磁性部覆盖的半导体层将会破碎(或在后续过程中破碎)，形成了多个尺寸轮廓由第一磁性部覆盖区域所定义的LED器件，如 圆形LED器件——优选所述LED器件的尺寸为5～800μm。
为了保证在步骤三中，LED器件能够翻转或保持为第一、二键合层相互贴紧的正确姿态，在所述LED器件中，优选第一磁性部处于LED器件偏内侧的位置，由此，如果LED器件以相反的姿态吸附，第一、二磁性层的距离较远，其吸附力较弱，容易设计一定的清除机制对其进行清除，只留下姿态正确的LED器件。具体地，优选第一磁性部设置在LED器件偏内侧且厚度不超过LED器件整体厚度的1/2。由于在LED器件中，半导体层和第一电极的厚度很难随意地调节，因此，还优选第一磁性部与第一电极之间还垫设有无磁金属层，通过无磁金属层的厚度调节，容易使得第一磁性部的厚度不超过LED器件整体厚度的1/2，所述无磁金属层可以为金、银、铜、铝等无磁性(在本说明书中，相对磁导率<10的材料均认为是无磁性材料)的金属或合金所构成膜层，其可以通过电镀以及利用与上述与第一磁性部相同的图形化方法，先于第一磁性部设置在第一电极之上。
所述第一键合层可以直接为第一磁性部的表层(第二键合层需要采用与第一磁性部具有良好的焊接性能的材料)，也可以为另外设置的专门用于键合的膜层。在第一键合层为另外设置的膜层的情况下，其可以采用电镀、喷镀、热浸镀等方法形成在第一磁性部之上，为了不影响步骤三中第一、二磁性层之间的磁吸力，优选第一键合层的厚度不超过第一磁性部的1/2。优选地，所述第一键合层可以为低熔点金属层或软质金属层，以便于在步骤四中通过升温熔合或加压压合的方式使第一、二键合层发生键合。当所述第一键合层为低熔点金属层时，优选其为铟、锡的金属层或以铟或锡为主要成分的合金层；而当所述第一键合层为软质金属层时，优选其为金、银等易于压焊的软质金属层。除此之外，所述第一键合层还可优选为纳米银、纳米金等纳米金属涂层，其一般可通过升温加压的方式使第一、二键合层发生键合，其键合所需的温度和压力均比较低， 工艺适用性较好。
所述母板优选为玻璃板(如普通玻璃、石英玻璃、蓝宝石玻璃)、陶瓷板或是无磁性的金属板，也可以为上述等材料的复合板体，其在上述制造过程中能够为所形成的LED阵列装置提供良好的支撑，且不会影响到第二磁性部的磁场。所述第二磁性部由硬磁性材料构成，具体地，其可以为由铝镍钴系永磁合金、铁铬钴系永磁合金、永磁铁氧体、稀土永磁材料或者上述材料构成的复合硬磁性材料构成；优选地，第二磁性部由钕铁硼合金构成，作为一种常用且性能优秀的硬磁性材料，第二磁性部由钕铁硼合金构成具有更好的经济性。在本发明的一优选方案中，所述母板的键合位设有容纳孔，而所述第二磁性部嵌设在容纳孔之内，将第二磁性部嵌设在母板的容纳孔之内，其不仅可以保持第一板体面的平坦，还可加深容纳孔使得第二磁性部具有更大的体积以增强其磁场。优选地，所述容纳孔通过激光雕刻、掩膜蚀刻、掩膜电解(母板为金属板的情况下)等工艺方法在母板的第一板体面上形成，由此可使所形成的容纳孔形状和位置均非常精确。所述容纳孔可以为盲孔或贯穿母板的通孔。第二磁性部可以先制作为与上述容纳孔相对应的形状，如圆柱状，然后将其嵌入到容纳孔之中。
在所述LED器件尺寸很小且数量巨大的情况下，所述第二磁性部同样要求尺寸很小且数量巨大，为了更高效地将第二磁性部设置到母板的容纳孔中，在本发明的一优选方案中，所述第二磁性部的形成方法为：在母板的容纳孔中填充硬磁性材料的粉末(如钕铁硼粉末，可将粉末做成膏体)，对母板进行高温处理，使得容纳孔之内的硬磁性材料粉末烧结为第二磁性部。具体来说，可在母板形成容纳孔之后，将硬磁性材料的粉末压涂或刮涂过母板的表面使其挤入到各个容纳孔中，对母板进行900～1200℃的高温烘烤(可同时在容纳孔外加压)以将硬磁性材料粉末烧结为第二磁性部，由此不需要将第二磁性部逐个地嵌入 容纳孔中，其制作效率非常高。为了使得硬磁性材料粉末能够更加有效地填充到容纳孔中，优选所述容纳孔为通孔，由此可从母板的另一侧检测硬磁性材料粉末在容纳孔中的渗透情况(优选为完全渗透，从另一侧挤出)。为了使得母板能够适应硬磁性材料粉末的烧结温度，在本发明进一步的优选方案中，所述母板由熔点大于1500℃的无磁性金属或合金制作而成，具体地，其可以为由钛、钼、钨、铬或其合金制作而成的金属板，这种母板不仅机械结构强、无磁性，还能够耐受高温，适合上述填充、烧结的工艺。除此之外，为了能够承受硬磁性材料粉末的烧结高温，所述母板还可优选地采用耐高温且机械性能好的陶瓷材料，如氧化锆陶瓷制作而成。
优选地，在母板上设置完第二磁性部之后，为了使得第一板体面保持平坦，至少还可对母板的第一板体面进行抛光处理。为了使得在步骤五中，基础层容易与母板相互分离，在母板进行抛光处理之后，还可优选地对第一板体面进行降粘处理，如在第一板体面上设置一有机硅聚合物或含氟聚合物所构成的涂层或镀层(采用喷涂或真空镀膜的方式形成)。
为了保证第二磁性部具有正确和足够的磁场，在母板完成之后或是上述工艺步骤中，可将母板置于充磁机中使强磁场穿透母板而对其第二磁性部进行充磁(如母板太大，可采用扫描的方式进行充磁)。优选充磁时充磁机的磁场垂直穿过母板，由此第二磁性部的磁场方向垂直于第一板体面，其能够更加有效地穿透至焊盘的上方。对所述第二磁性部进行充磁，可正确地激活第二磁性部烧结成型之后或是被高温退磁之后(如驱动电路层制作过程中的高温镀膜和退火、第一、二键合层的升温键合)的剩余磁场。优选地，在步骤二和步骤三之间对第二磁性部进行充磁，由此可修复掉在步骤二或上一次步骤四(在母板重复使用的情况下)中，第二磁性部由于温度过高而可能出现的退磁状态。
在步骤一中，在母板的第一板体面上设置无磁性的绝缘基础层，作为驱动电路层基底的基础层要求不屏蔽或减弱第二磁性部贯穿至焊盘之上的磁场且在步骤五的分离过程中对其上的驱动电路层和LED器件具有良好的支撑作用。由此，基础层可选择绝缘、无磁性、具有较大抗拉伸性能的有机膜层，具体地，其可以为聚酯(PET)、环烯烃聚合物(COP)、聚酰亚胺(PI)等聚合物膜层。优选地，所述基础层为聚酰亚胺膜，在各类聚合物膜层中，聚酰亚胺膜不仅具有良好的抗拉伸、耐化学性能，还具有更高的玻璃化温度(400℃以上)，由此不仅可以承受后续制作驱动电路层时的各种高温条件(如高温镀膜、退火)和化学条件(如膜层蚀刻)，在步骤四中，还能承受第一、二键合层键合所需的高温(350℃以内，假设第一、二键合层采用升温熔合的方法进行键合)，以及在基础层与母板相互分离(步骤五)的过程中具有较少的变形，以避免其上的驱动电路层和器件层受到损伤。所述聚酰亚胺层的厚度可设定在2～200μm的范围内，以利于第二磁性部磁场的贯穿且保持较好的机械强度。聚酰亚胺层可以通过在母板的第一板体面上涂布聚酰胺酸溶液并经过高温或催化聚合形成，也可以将成型好的聚酰亚胺薄膜通过一定的粘合层粘附在第一板体面上。
在步骤二所设置的驱动电路层中，优选所述焊盘的节距为LED器件尺寸的1.2～5.0倍。所述驱动电路层可以为无源驱动层，也可以为包含有源器件的有源驱动层。在驱动电路层为无源驱动层的情况下，其可设计为每个焊盘都通过引线引出，也可设计为交叉矩阵——驱动电路层可以仅设计为构成交叉矩阵的行电极(焊盘设置在行电极上)，而构成交叉矩阵的列电极待到LED器件键合之后再进行设置。上述驱动电路层，可由沉积(如磁控溅射、蒸镀)在基础层上的导电膜层，尤其是金属膜层(如Cu、Mo-Al-Mo)经光刻等图形化方法形成。在驱动电路层为有源驱动层的情况下，驱动电路层可包含用于控制每个LED器件单 独发光的TFT器件(薄膜晶体管)，具体来说，所述TFT器件可以由硅(如α-Si)、氧化物半导体或是有机半导体构成，为了允许LED器件工作时具有充足的驱动电流，所述TFT器件优选为由电子迁移率较高的低温多晶硅(LTPS)或是氧化铟镓锌(IGZO)构成。上述有源驱动层、LED器件驱动电路的设计可参考现有AM-OLED显示器件的驱动设计，如采用2T1C(即包含两个TFT器件和一个电容，一般用在AMOLED的驱动电路上)或是更加复杂(如进一步加入补偿电路)的像素驱动设计，所不同的仅为将其像素输出端改为所述焊盘，所述焊盘同样可由上述金属膜层(如Cu、Mo-Al-Mo)经光刻等图形化方法形成。
所述焊盘的表面可以直接作为第二键合层(一般要求第一键合层为专门且对应的键合层)，也可在焊盘的表面设置另外的膜层来作为第二键合层。在步骤四中，为了便于在第一键合层为低熔点金属层的情况下通过升温处理使得第一、二键合层相互发生焊接，所述第二键合层可以为容易熔焊(熔焊时浸润性好)的金属层，如金、银或铜的镀层，或者，所述第二键合层也可以同样为低熔点的金属层。第二键合层也可为软质金属层，如较厚的纯金镀层，以便于在所述步骤四中，通过在LED器件外侧施加压力使得第一键合层与第二键合层相互粘结。又或者，第二键合层为纳米银、纳米金等纳米金属涂层，其可通过升温加压的方式使第一、二键合层发生键合，但其键合所需的温度和压力均比较低，工艺适用性较好。在第二键合层另外设置的情况下，第二键合层可以采用镀膜(如蒸镀、磁控键合、电镀)结合一定的图形化方式形成(可以与焊盘同时图形化)，也可以基于焊盘的图形采用电镀(可通过驱动电路层导入电流实现电镀)或热浸镀形成，除此之外，第二键合层还可采用低熔点金属颗粒的膏体或纳米金属涂料印刷或打印在焊盘上而成。
优选地，在步骤二设置完驱动电路层之后，还可在驱动电路层之上设置定 位层，所述定位层由绝缘材料制作而成，其厚度优选为所述LED器件高度的0.6～2.0倍，所述定位层包括与键合位相对应的定位孔，使得在步骤三中，所述LED器件通过嵌入所述定位孔而被第二磁性部所吸紧。在设有上述定位层的情况下，当LED器件偏离而不嵌入定位孔时，由于LED器件偏离第二磁吸部的上方且定位层的空间隔离作用，第二磁吸部与第一磁性部的距离较远，因而其磁吸力较弱，且LED器件的平移无限制，因而难以形成稳定的吸附，只有当LED器件嵌入到定位孔之内，第二磁吸部与第一磁性部的距离较近，LED器件的平移受限，才能够形成较稳定的吸附，由此，上述定位层可使LED器件更加准确地吸附在键合位上。所述定位孔的尺寸可以设置为所述LED器件尺寸的1.1～1.5倍，该尺寸范围的定位孔可以发挥较好的定位作用，如果定位孔设置大于该尺寸，其定位不准，而如果定位孔小于该尺寸，其会导致LED器件在步骤三中无法有效地吸附。
利用定位孔对大于其尺寸的LED器件的排除作用，还可使得所要制造的LED阵列装置彩色化。优选地，所述LED器件至少包括尺寸依次递减的第一LED器件、第二LED器件和第三LED器件，第一LED器件、第二LED器件和第三LED器件具有不同的发光颜色；所述定位孔至少包括尺寸依次递减的第一定位孔、第二定位孔和第三定位孔，第一定位孔、第二定位孔和第三定位孔的尺寸分别为所述第一LED器件、第二LED器件和第三LED器件的1.1～1.5倍；以及，在步骤三中，依次将第一LED器件、第二LED器件和第三LED器件散布到所述驱动电路层上，使得第一LED器件、第二LED器件和第三LED器件依次嵌入到第一开孔、第二开孔和第三开孔中。具体地，所述第一、二、三LED器件可以分别为发射蓝光、绿光、红光的GaN、GaP和GaAs系LED器件，第一、二、三LED器件尺寸的相邻比例可以设置为1.6～2.0(即第一LED器件的尺寸为第二LED器 件的1.6～2.0倍，第二LED器件的尺寸为第三LED器件的1.6～2.0倍)，在步骤三中，在第一LED器件散布到所述驱动电路层上时，其无法嵌入到第二、三定位孔中而只能嵌入第一定位孔(需使其占满第一定位孔)，同理，第二、三LED器件只能依次嵌入到第二、三定位孔中，由此不同颜色LED器件分别嵌入对应的定位孔中而与对应的焊盘连接，使得所要制造的LED阵列装置彩色化。除了第一、二、三LED器件之后，还可进一步设置第四、第五甚至更多尺寸、颜色不同的LED器件，以进一步提高所要制造的LED阵列装置的色域范围，然而，过多的颜色设置会导致工艺过程和像素结构过于复杂。
优选地，所述定位层为光敏树脂涂层，由此所述定位孔可以方便地采用黄光工艺(即曝光、显影的图形化工艺)形成。优选地，所述定位层也可以为有机硅涂层、聚酰亚胺涂层或耐高温油墨层，由此其可以承受第一、二键合层的键合的高温(假设第一、二键合层采用升温方式进行键合)，所述定位孔可由激光雕刻工艺、掩膜蚀刻工艺或微纳米压印工艺形成，由此所形成的定位孔的位置形状精确，能够保证LED器件的嵌入效果。为了使得在步骤三中，所述LED器件能够更加有效地嵌入到所述定位孔中，优选所述定位孔为圆形，所述LED器件具有圆形的轮廓，将LED器件设置为具有圆形的轮廓，其能够以不同的角度嵌入到定位孔中，因为提高了嵌入定位孔的效率。
在步骤三中，将LED器件散布到驱动电路层上的方法可分为干式分散法和湿式分散法。干式分散法包括将巨量LED器件所构成的干燥粉末涂抹或散布在驱动电路层上，由此使LED器件接近焊盘而被焊盘背后的第二磁性部所吸附，再除去无吸附的多余粉末。在湿式分散法中，先将LED器件分散到液体中构成LED器件的分散液，再使所述分散液与驱动电路层接触，由此使分散液中的LED器件被吸附到所述焊盘上，湿式分散法容易通过分散液的流动来保持LED器件 的分散，以及容易控制LED器件在分散液中的浓度，有利于对LED器件吸附过程的控制。进一步优选的，在设有上述定位层的情况下，还可使定位层具有一定的疏水性，例如，使所述分散液在所述定位层的表面具有大于100°的接触角，由此使得分散液受到定位层的排斥而倾向于与定位孔中的焊盘接触，其有利于将悬浮在分散液中的LED器件引导到定位孔的位置上，使得LED器件的吸附过程更加准确高效。上述疏水的定位层可以采用烃烯含量较高的耐高温油墨制作而成，而分散液采用水作为溶剂。
优选地，在步骤三中，还设有一定的清除机制以对吸附不良或位置不佳的LED器件进行清除，所述清除机制采用但不限于以下方法：1)、采用液体或气体对驱动电路层的表面进行冲洗，以将吸附不良或位置不佳的LED器件冲洗掉；2)、在所述母板上施加机械振动，以将吸附不良或位置不佳的LED器件震落；3)、在母板的外侧面之上施加反向磁场，以将吸附不良或位置不佳的LED器件吸掉；4)、在母板的外侧面之上施加粘性物，以将吸附不良或位置不佳的LED器件粘掉。上述方法或其组合可有效地清除掉吸附不良或位置不佳的LED器件，而保留吸附良好、位置准确的LED器件。
基于第一、二键合层所采用的材料类型，在步骤四中，第一、二键合层的键合可通过升温熔焊(如采用回流炉进行焊接)、压焊(如超声波焊接)或是两者的结合来实现，至此，已经在母板上形成了以基础层为基底的LED阵列装置。
优选地，在步骤四之后，还进一步在第二电极上覆盖一顶部导电层以构成LED器件的第二电极连接。具体地，所述顶部导电层可以为透明导电层，如氧化铟锡、氧化锌铝或氧化铟镓锌的溅射镀层，或是透明导电聚合物(如PEDOT)的涂层，或是纳米银、石墨烯等透明导电层。所述顶部导电层也可以为部分与第二电极接触的图形化非透明导电膜，如与第二电极边缘接触的金属薄膜。
优选地，所述LED阵列装置还包括填补层，所述填补层在步骤四之后进行制作，所述顶部导电层设置在填补层之上，其设置步骤如下：在所述定位层上(包括LED器件的外侧)覆盖填补层，所述填补层渗入并填补掉LED器件与定位层之间的缝隙；对所述填补层进行固化和图形化处理以形成露出LED器件第二电极的露出口；以及，在填补层及露出口上设置所述顶部导电层以构成LED器件的第二电极连接。所述填补层，主要用于填补掉LED器件与定位层之间的空隙，由此可提供更为平坦的表面以便于设置所述顶部导电层且避免第一、二电极之间的短路。所述填补层可选用流平性较好的涂布材料，如油墨或光敏树脂，其涂布在定位层和LED器件的外侧之后，可以流入并填补掉定位层和LED器件之间的缝隙，并最终通过烘烤或紫外固化的方法固化下来。优选地，所述填补层为一光敏树脂涂层，采用光敏树脂涂层，其容易通过黄光工艺进行图形化以形成所述露出口。进一步优选地，所述填补层可以为黑色或深色的光敏树脂涂层，由此，其还能够使得LED阵列装置的表面(除了LED器件之外)保持黑色或深色，有利于提高LED阵列装置作为显示装置时在强光环境下的可读性。
为了使得所制作的LED阵列装置彩色化，还可进一步在顶部导电层之上设置彩色化膜层。例如，在LED器件为蓝光LED器件的情况下，可将LED器件定义为第一、二、三LED器件，至少将黄色荧光涂层设置在第一、二LED器件之上，再将红、绿滤光膜分别设置在第一、二LED器件之上；除此之外，也可在第一、二LED器件之上分别设置红色和绿色的颜色转换层，如红、绿的荧光粉涂层或量子点涂层。上述彩色化膜层可以采用印刷、打印、黄光等方法进行设置。
在所述步骤五，可通过机械剥离等方法使基础层与母板相互分离。具体来说，可直接将制作好LED阵列装置从母板上撕离出来，也可在制作好LED阵列 装置的上贴附一定的剥离胶纸(如紫外减粘胶纸)，再将其从母板上撕离出来，以避免LED阵列装置受力过大而使得其上的电路层发生故障。除此之外，还可以在基础层与母板之间充入液体或气体，以使基础层和母板分离。
相比于现有技术，本发明的有益效果在于：
在本发明提供的制造方法中，利用设置在母板上的第二磁吸部所产生的磁场对LED器件第一磁吸部的磁吸力，使得LED器件能够自动地吸附到所要键合的焊盘上，其中，第一、二磁性部之间的磁吸力不仅能够使LED器件吸附到焊盘上，还能实现LED器件的定位和定向，由此在实际操作中，将LED器件散布到母板的第一板体面上，即可实现将巨量的LED器件同时转移到对应的焊盘上，这种过程相比于现有技术采用转移头对逐个(或多批)LED器件进行转移的方法，其巨量转移效率要显著地提高。
在上述制造方法中，由于LED器件是转移并键合到基于基础层的驱动电路层之上的，最终基础层从母板上剥离出来，使得母板可以重复使用，由此，在实际的制造过程中并不需要重复进行母板的制作，大大地降低了上述制造过程的难度和成本。此外，由于基础层可采用柔性材料制作而成，上述制造方法所制作的LED阵列装置还可以是柔性的，符合显示技术的发展趋势。
以下通过附图与实施例来对本发明的制造方法做进一步详细的说明。
附图说明
图1为实施例一的显示器整体平面示意图；
图2为实施例一的显示器的局部像素平面示意图；
图3为实施例一的显示器的像素剖面示意图；
图4为实施例一所采用LED的外形及膜层示意图；
图5为实施例一所采用LED的制造步骤(1)；
图6为实施例一所采用LED的制造步骤(2)；
图7为实施例一所采用LED的制造步骤(3)；
图8为实施例一所采用LED的制造步骤(4)；
图9为实施例一所采用LED的制造步骤(5)；
图10为实施例一所采用LED的制造步骤(6)；
图11为实施例一所采用的母板的整体平面示意图；
图12为实施例一所采用的母板的局部示意图；
图13为实施例一所采用的母板，其第二磁性部的设置方法示意图；
图14为实施例一所采用的母板的剖面示意图；
图15为实施例一的显示器，其制造方法中形成基础层的示意图；
图16为实施例一的显示器，其制造方法中形成行电极的示意图；
图17为实施例一的显示器，其制造方法中形成行电极铜金属层的示意图；
图18为实施例一的显示器，其制造方法中形成定位层的示意图；
图19为实施例一的显示器，其制造方法中形成焊盘的示意图；
图20为实施例一的显示器，其制造方法中对第二磁性部进行充磁的示意图；
图21为实施例一的显示器，其制造方法中使LED器件嵌入定位孔的示意图；
图22为实施例一的显示器，其制造方法中利用磁铁清除不良LED器件的示意图；
图23为实施例一的显示器，其LED阵列装置(半成品)示意图；
图24为实施例一的显示器，其制造方法中形成底部电极连接的示意图；
图25为实施例一的显示器，其制造方法中形成填补层的示意图；
图26为实施例一的显示器，其制造方法中形成顶部电极层的示意图；
图27为实施例一的显示器，其制造方法中形成荧光粉涂层的示意图；
图28为实施例一的显示器，其制造方法中利用剥离胶纸将LED阵列装置剥离出母板的示意图；
图29为实施例一的显示器，其制造方法中去除剥离胶纸的示意图；
图30为实施例一的显示器，其制造方法中的另一形成顶部电极层的示意图；
图31为实施例一所采用LED，其制造步骤(6)的一代替方案的示意图；
图32为实施例二的显示器整体平面示意图；
图33为实施例二的显示器的像素示意图；
图34为实施例二的显示器的子像素剖面示意图；
图35为实施例二所采用的母板，其形成容纳孔的示意图；
图36为实施例二所采用的母板，其形成第二磁性部的示意图；
图37为实施例二所采用的母板的剖面示意图；
图38为实施例二的显示器，其制造方法中形成基础层的示意图；
图39为实施例二的显示器，其制造方法中形成缓冲层和驱动电路层的示意图；
图40为实施例二的显示器，其驱动电路层的剖面示意图；
图41为实施例二的显示器，其子像素的驱动电路层的平面示意图；
图42为实施例二的显示器，其子像素的驱动电路层的电路示意图；
图43为实施例二的显示器，其制造方法中形成定位层的示意图；
图44为实施例二的显示器，其制造方法中形成第二键合层的示意图；
图45为实施例二的显示器，其子像素的剖层示意图；
图46为实施例二的显示器，其制造方法中对第二磁性部进行充磁的示意图；
图47为实施例二的显示器，其制造方法中使LED器件嵌入定位孔的示意图；
图48为实施例二的显示器，其制造方法中形成底部电极连接的示意图；
图49为实施例二的显示器，其制造方法中形成填补层的示意图；
图50为实施例二的显示器，其制造方法中形成顶部电极层的示意图；
图51为实施例二的显示器，其制造方法中形成彩色化层的示意图；
图52为实施例二的显示器，其制造方法中利用剥离胶纸将显示器剥离出母板的示意图；
图53为实施例二的显示器，其制造方法中清除掉剥离胶纸的示意图；
图54为实施例三的显示器的像素示意图；
图55为实施例三的显示器，其制造方法中使蓝色LED器件嵌入定位孔的示意图；
图56为实施例三的显示器，其制造方法中使红色LED器件嵌入定位孔的示意图；
图57为实施例三的显示器，其制造方法中使绿色LED器件嵌入定位孔的示意图；
图58为实施例三的显示器的子像素剖面示意图。
具体实施方式
实施例一
实施例一提供LED显示器100的制造方法，如图1、2所示，显示器100为被动驱动的单色LED显示器，其具有1.61英寸的像素区域，分辨率为40×32。显示器100的主体为LED阵列101，其包括40×32个按正方形矩阵排列的LED器件10，LED器件10的节距为0.8mm。LED阵列101由相互交叉的行电极102和列电极103进行驱动，每个像素具有图3所示的剖面结构。
如图4所示，LED器件10为GaN系蓝光的垂直结构圆形LED器件，其规格直径为0.3mm，其膜层由内到外依次为第一键合层11、软磁金属层(第一磁性部)12、无磁金属层13、第一电极14和半导体层15。其中，第一键合层11为5μm厚的锡金属层，软磁金属层12为40μm厚的铁镍合金层，无磁金属层13为40μm厚的铜金属层、第一电极14为100nm厚的镍薄膜；半导体层15的总厚度4μm，其包括N型层(n-GaN)151、多量子阱(MQWs)152和作为LED器件第二电极的P型层(p-GaN)153。
LED器件10悬浮、分散在DI水中形成分散液，其制造方法如下：
(1)、如图5所示，采用MOCVD(金属有机化合物化学气相沉积法)在蓝宝石基底16上依次外延生长N型层151、多量子阱层152和P型层153，形成半导体层15，采用磁控溅射在P型层上沉积镍薄膜，形成第一电极14；
(2)、如图6所示，采用狭缝涂布法在第一电极14上涂布100μm厚的光敏树脂涂层17，并采用黄光方法(包括预固化、掩膜曝光、显影、坚膜等工艺步骤)进行图形化，形成系列直径0.3mm的圆孔171，其中，第一电极14在圆孔171的底部裸露，圆孔171的间距为40μm；
(3)、如图7所示，以第一电极14作为阴极，在圆孔171中电镀铜金属层13，控制电镀电流和时间使得铜金属层13的厚度为40μm；继续以第一电极14作为阴极，在圆孔中进一步电镀铁镍合金层12，控制电镀电流和时间使得铁镍合金层12的厚度为40μm；继续以第一电极14作为阴极，在圆孔中进一步电镀锡金属层11，控制电镀电流和时间使得锡金属层11的厚度为5μm；
(4)、如图8所示，采用褪膜液浸泡并冲洗掉光敏树脂涂层17，留下由铜金属层13、铁镍合金层12和锡金属层11叠合而成的系列凸台111(高度约为85μ)；
(5)、如图9所示，在凸台111所构成的面上粘贴剥离胶纸18，剥离胶纸18包括PET塑料膜181和10μm厚降粘胶层182，降粘胶层182可照射紫外光降粘，由于凸台111的凸起，降粘胶层182只能粘结到凸台111的顶部；从蓝宝石基底16的底侧照射KrF准分子紫外激光161，其穿透蓝宝石基底16而被半导体层15的底部吸收，使得半导体层15底部发生热分解(反应式：2GaN＝2Ga+N 2)，由此使得半导体层15与蓝宝石基底16分离，在凸台111的支撑下，凸台111底部的半导体层15保持完整(没有凸台111支撑的半导体层15大部分破碎掉，少部分粘结在LED器件的边缘，在后续工序中也会破碎掉)，其与凸台111一起随剥离胶纸18从蓝宝石基底16上剥离下来形成LED器件10，采用稀盐酸清洗掉其半导体层15底部分解残留的Ga金属；
(6)、如图10所示，采用紫外光183(紫外高压水银灯)从背面照射剥离胶纸18而使降粘胶层182的粘力降低，用DI水19将LED器件10冲洗下来，形成LED器件10的DI水分散液191，用过量DI水冲洗掉半导体层的粉屑，滤掉多余的DI水，得到分散密度为(500～1000)个/ml的LED器件分散液。可通过DI水的流动来保持LED器件10的悬浮。
如图11、12所示，用厚度2mm、尺寸370mm×470mm的304不锈钢板作为母板20，在母板20的第一板体面21上定义出多个符合显示器尺寸的单元区22，每个单元区包含符合显示器100显示区域的像素区23，在每个像素区23中定义出多个与显示器100各像素中心相对应的键合位24，如图13所示，采用激光251在键合位上雕刻出直径400μm、深度0.5mm的圆形容纳孔25，将直径400μm、高0.52mm的微型钕磁铁26嵌入到各个容纳孔25中，由此形成系列第二磁性部。对第一板体面21进行机械抛光(主要将钕磁铁凸出的顶部抛平)，然后在第一板体面21上喷涂一层氟聚合物的涂层27，涂层27固化之后形成图14所 示的板体表面。
如图15所示，采用狭缝涂布法在第一板体面21上涂布聚酰胺酸溶液，热烘以聚合为作为基础层的厚度为50μm的聚酰亚胺薄膜31，如图16、图1、图2所示，在基础层31上采用磁控溅射沉积作为底部电极层(驱动电路层)的Mo-Al-Mo金属薄膜321(即“钼铌-铝钕-钼铌”三层合金膜，也可为其他导电性良好的金属薄膜)并采用光刻工艺(包括光刻胶涂布、光刻胶预固化、对光刻胶进行掩膜曝光、光刻胶显影、金属薄膜蚀刻、光刻胶褪膜等工艺步骤)图形化为32个行电极32，行电极32的宽度为500μm、间距为300μm，其连接至第一引脚322(同样由底部电极层图形化而成)。如图17所示，将母板20浸入铜的电镀槽中，以行电极32作为阴极(各个行电极暂时相互连接以便于电镀时的连接，最后模切为显示器单元时才切断)，进一步在行电极上电镀一层5μm厚的铜金属层323。
如图18所示，进一步在第一板体面21上印刷作为定位层的100μm厚聚酰亚胺涂层33，采用激光对定位层33进行雕刻，控制激光的功率和雕刻速度，在键合位上形成多个直径350μm的定位孔331且其底部裸露出行电极32，由此形成用于焊接LED器件的焊盘324。如图19所示，将母板20浸入金属锡的电镀槽中，以行电极32作为阴极，在焊盘324上电镀一层作为第二键合层的厚度30μm的锡金属层325。
如图20所示，将母板20置于扫描式充磁机261中，使充磁机261的磁场262垂直穿透母板20而对第二磁性部26进行充磁。
如图21所示，将母板20固定在振动台(图上无标出)上，振动台为母板提供频率为20～200Hz的横向振动411(沿母板面)和纵向振动412(垂直母板面)，将LED器件分散液191喷淋在第一板体面上，LED器件10的第一磁性部12受到 第二磁性部26的磁场作用，以第一键合层11朝着母板20的姿态(流体阻力与磁吸力共同作用，会导致LED器件10倾向于保持该姿态)被吸引到定位孔331上并嵌入定位孔331且保持第一、二键合层11、325相互贴紧。振动台的横向振动411可使LED器件10在第一板体面21上水平移动并落入定位孔331中，由此提高LED器件10吸附过程的效率；分散液191喷淋时的冲刷作用和振动台的纵向振动412则可冲洗、振落掉吸附不良、位置不佳的LED器件。如图22所示，吸附完成之后的母板20通过上侧带有磁铁421的闸门42，以进一步通过磁铁421吸附掉吸附不良或位置不佳的LED器件(闸门42的高度可调节，以避免把好的LED器件也吸附掉)。可重复上述步骤以使得LED器件10充分地嵌入到定位孔331中以形成图23所示的LED阵列。
采用气刀吹掉母板上残留的LED器件分散液，如图24所示，使母板经过300℃的回流炉，使得同为锡金属层的第一、二键合层11、325熔化并相互浸润形成键合层43。由此，各个LED器件10被焊接在焊盘324上，其第一电极14与驱动电路层的行电极32形成底部电极连接。
如图25所示，进一步在第一板体面21上涂布作为填补层的20μm厚负性黑色光敏树脂层44，其渗入并填补掉LED器件10与定位孔331之间的缝隙(可抽真空去掉缝隙之内的气泡)，采用黄光工艺对填补层44进行图形化，以在LED器件10顶部形成露出第二电极153的开口(露出口)441。如图26所示，采用磁控溅射进一步在母板之上沉积一层作为顶部电极层的氧化铟锡薄膜45，采用光刻工艺将氧化铟锡薄膜45图形化为40个列电极451，列电极451与周边同样由氧化铟锡薄膜45图形化而成的第二引脚452连接(参考图1、图2)。
至此，已完成LED阵列装置101在母板20上的制作。如图28所示，在LED阵列装置101上贴附一层剥离胶纸47，剥离胶纸47包括PET塑料膜471和紫 外降粘胶472，如图29所示，在剥离胶纸47的辅助下将LED阵列装置101从母板20上撕离下来，并采用刀模将其切割为各显示器单元。如图29所示，照射紫外光473去除剥离胶纸47，即可得到柔性LED显示器100；或者，也可将LED阵列装置101贴附在硬质支撑板104(如铝板、不锈钢板、玻璃板、塑料板等硬质板体，可以为平直或是弧形的形状)上，再照射紫外光去除剥离胶纸，得到固定在支撑板上的硬质LED显示器100。
在本实施例的其他方案中，软磁金属层12还可改为纯铁或硅钢的镀层，第二磁性部26还可改为铝镍钴系永磁合金、铁铬钴系永磁合金、永磁铁氧体、其他稀土永磁材料或者上述材料构成的复合硬磁性材料。在本发明的其他方案中，可以省去荧光粉涂层46以得到蓝色的LED显示器，LED器件10还可改为GaP、GaAs等其他发光颜色的LED器件(外延基底和半导体层的配比需做相应的改变，可参考发光半导体行业的现有技术)，以得到其他颜色的LED显示器。
在本实施例的其他方案中，第一、二键合层11、325的其中之一也可改为金的镀层(如电镀层或真空镀层)，金的镀层与熔化之后的锡金属层也具有良好的浸润性而容易形成焊接。第一、二键合层11、325还可都改为金的镀层，而采用超声波焊接等压焊的方式来使第一、二键合层发生焊接。除此之外，至少第一、二键合层11、325的其中之一还可改为纳米银或纳米金的涂层，采用升温压焊的方式使第一、二键合层11、325发生焊接。
在本实施例的其他方案中，母板20还可以改为玻璃板、石英玻璃板、蓝宝石基板或是陶瓷板或是其他无磁性的金属板。其容纳孔25可以采用激光雕刻或掩膜蚀刻(如母板20为玻璃板或石英玻璃板的情况下，采用氟化氢铵进行光掩膜蚀刻)等方式形成。
在本实施例的其他方案中，定位层33还可换成柔软性更好的有机硅涂层或 成本更低的耐高温油墨印刷层。除此之外，定位层33还可改为由光敏树脂涂层制作而成，其定位孔331可采用黄光工艺形成以更加精确的形状。
如图30所示，在本实施例的其他方案中，顶部电极层45还可改为Mo-Al-Mo等金属或合金的薄膜，其可通过磁控溅射等方法进行镀膜并图形化为列电极451，列电极451在LED器件10的顶部开有出光孔452，出光孔452的边缘与LED器件10顶部的第二电极153接触形成顶部电极连接。在顶部电极层45采用金属膜层制作而成时，填补层44无需采用黑色光敏树脂层。为了达到降低反射光的目的，可以进一步在顶部电极层之上覆盖一层黑色油墨层(无画出)，黑色油墨层可以在LED顶部开孔以便于LED器件光的透出，黑色油墨层还可为半透并完全覆盖显示器表面的油墨层，其有利于进一步减少显示器反射。
在本实施例的其他方案中，还可将LED器件10干燥之后做成粉末，将LED器件分散液进行喷淋的步骤改为将LED粉末进行散布(可通过气流带动)的步骤，同样可以使LED器件10被转移到焊盘324上，其中，可采用气刀吹气的方式来清除掉吸附不牢的LED器件10。
如图31所示，在本实施例的其他方案中，将LED器件10从蓝宝石基底16剥离下来的过程中，还可采用磁铁18'来代替剥离胶纸18。具体来说，可将磁铁18'贴置在蓝宝石基底16的正侧，在蓝宝石基底16的底侧照射紫外激光161使半导体层15底部发生热分解，由此，由于半导体层15底部结合力的消失(或减弱)，LED器件10将在第一磁性部12与磁铁18'之间的磁力作用下被吸附到磁铁18'上而实现剥离。可直接采用DI水或其他流体将LED器件10从磁铁18'上冲洗下来，或是采用其他机械方法将LED器件10从磁铁上刮抹下来；磁铁18'也可以为电磁铁，由此可通过退去磁场的方式使LED器件与磁铁分离；除此之外，还可在磁铁18'上贴附一层垫膜181'，由此将LED器件10吸附在垫膜上， 最后撤去磁铁18'，使得LED器件10从垫膜181'上脱落下来。
实施例二
如图32—34所示，实施例二所要制作的是一款有源矩阵驱动的彩色LED显示器200，其具有26英寸的像素区域，分辨率为1920×1080，每个像素201还进一步包括红(R)、绿(G)、蓝(B)、白(W)四原色的子像素202。显示器200的主体为一LED阵列203，其包括1920×1080×4一共829.44万个按正方形矩阵排列的LED器件10，LED器件10的节距为150μm。
实施例二的LED器件10与实施例一基本相同(参考图4)，所不同的是，实施例二的LED器件的直径为100μm，其软磁金属层和铜金属层的厚度均为20μm，第一键合层改为厚度3μm的铟金属层。LED器件悬浮在DI水中形成分散密度为(1000～2000)个/ml的分散液，其制作方法也与实施例一相同(第一键合层需改为电镀铟)。
母板为厚度0.5mm、尺寸640mm×400mm的钛金属板(可耐1500℃以上的高温，除此之外，母板也可为钨、钼合金板或是氧化锆陶瓷板)，在母板的第一板体面上定义出与显示器相对应的单元区及像素区，在像素区中定义出与显示器的子像素202相对应的键合位，如图35所示，采用激光251在键合位202上雕刻出作为容纳孔直径100μm的圆形通孔25，如图36所示，将钕铁硼粉末(颗粒尺度为1～5μm)做成的膏体261刮涂过第一板体面21并对其施加压力，使膏体261挤透各容纳孔25，将母板20置于110℃的烘箱中除去水分，抛光清除掉母板20两面残留的膏体，将母板20置于1000℃的加压烧结炉中进行加压烧结，使得容纳孔25中的钕铁硼粉末烧结形成作为第二磁性部的钕铁硼磁铁26。对母板20的两个板体面进行抛光，然后在第一板体面21上喷涂一层氟聚合物的涂层27，由此形成如图37所示的第一板体面。
如图38、39所示，采用狭缝涂布法在第一板体面21上涂布聚酰胺酸溶液，热烘聚合为作为基础层的厚度10μm的聚酰亚胺膜31，在聚酰亚胺膜31上采用PECVD方法依次沉积作为缓冲层32的氮化硅(SiN x)和氧化硅(SiO 2)薄膜，并进一步采用LTPS的array制造工艺(如九次光刻顶栅工艺，或参考柔性AM-OLED的现有技术)在缓冲层32上形成驱动电路层33。
如图40—42所示，驱动电路层33的主体为由扫描线331(沿X方向，每个像素对应两条扫描线，共2160条)、数据线332(沿Y方向，每个像素对应两条数据线，共3840条)和电源线333(与数据线并排)交叉而成的阵列(还包括周边电路，在此不进行详述)，其中，扫描线331和数据线332的节距均为150μm。每个子像素202对应阵列的一个交叉点，其电路主要包括：第一薄膜晶体管(T1)334、第二薄膜晶体管(T2)335以及电容C 336。T1的栅极、源极分别与扫描线331、数据线332连接，漏极与电容C的一端以及T2的栅极连接，电容C的另一端以及T2的源极与电源线333连接，T2的漏极与焊盘339连接，由此，T1可由扫描线331的行扫描信号控制以将相应数据线332的电压信号写入到电容C中，在一帧之内由电容C保持T2的栅极电压以控制T2的沟道电流，由此进一步控制子像素202所对应LED器件的发光亮度。在驱动电路层33中，焊盘339通过平坦化层337上的过孔338与T2的漏极连接，焊盘339由磁控溅射沉积的Mo-Al-Mo薄膜光刻而成。
如图43所示，驱动电路层33上进一步采用狭缝涂布法涂布作为定位层的80μm厚的光敏树脂涂层34，采用黄光工艺形成多个直径110μm的定位圆孔341，定位圆孔341与各个焊盘339相对应以在其底部裸露出焊盘339。
如图44所示，进一步采用电镀法，在焊盘339之上电镀一层作为第二键合层的厚度30μm的铟金属层35。在电镀时，可在驱动电路层33的扫描线331、 数据线332上施加正电压，而在电源线333上施加负电压，由此使焊盘339为阴极。形成铟金属层35之后，驱动电路层的像素结构如图45所示。
显示器200的后续加工步骤主要包括：
(1)、如图46所示，对第二磁性部26进行充磁；(2)、如图47所示，将LED器件分散液191喷淋在第一板体面21上，使得LED器件10在第一、二磁性部12、26的磁场作用下嵌入到定位孔341中并保持第一、二键合层11、35相互贴紧；(3)、如图48所示，使第一、二键合层11、35发生焊接；(4)、如图49所示，在第一板体面21上进一步设置填补层44，填补层44图形化为具有使LED器件的第二电极153露出的开孔441；(5)、如图50所示，设置顶部电极层45；(6)、如图51所示，在顶部电极层45上设置彩色化层46；(7)、如图52、53所示，采用剥离胶纸47及紫外光471将显示器200从母板20上剥离下来。上述步骤(1)～(4)和(7)可采用与实施例一相同的工艺方法。在步骤(5)中，顶部电极层45也可采用与实施例一相同的透明导电膜或图形化金属薄膜，所不同的是其不需图形化为列电极。在步骤(6)中，在顶部电极层45之上设置一层厚度为10μm的黑色光敏树脂涂层461并采用黄光工艺图形化出多个与LED器件10的顶部对应的圆孔462(直径100μm)，采用喷墨打印方法，分别在每个像素的R、G、W子像素中填入红光量子点涂料4631、绿光量子点涂料4632和白光荧光粉涂料4633并干燥，B子像素不需填入涂料，由此使得显示器彩色化。
在本实施例的其他方案，驱动电路层33还可采用进一步改良的TFT电路设计，如带有补偿设计的TFT电路，具体可参考AM-OLED现有的像素电路设计。驱动电路层33的LTPS-TFT器件也可改为IGZO-TFT器件，并参考现有的IGZO-TFT的array基板制造工艺。
在本实施例的其他方案，红光量子点涂料4631、绿光量子点涂料4632可分 别替换为红光荧光粉涂料4631'和绿光荧光粉涂料4632'。
实施例三
如图54所示，实施例三所要制作的显示器300与实施例二基本相同，所不同的是，其每个像素301包括各一个红色子像素(R子像素)3021、蓝色子像素3022(B子像素)和两个绿色子像素3023(G子像素)。为了省去彩色化层的设置步骤，实施例三采用三种颜色的LED器件，其分别为红色LED 101(GaAs LED)、蓝色LED 102(GaN LED)和绿色LED 103(GaP LED)，三种LED器件的直径分别为100μm、162μm和50μm，其结构和制造步骤(所采用的外延基底、工艺参数可能不同)与实施例二所采用的LED器件相同，分别制作为DI水分散液1911、1912和1913。
实施例三的母板、基础层和驱动电路层的设计和制作步骤与实施例二基本相同。所不同的是，在定位层34中，定位圆孔分为直径分别为110μm、180μm和55μm三种规格的第一定位孔3411、第二定位孔3412和第三定位孔3413(焊盘也需配合修改)，其分别对应R子像素3021、B子像素3022和G子像素3023。
显示器300后续的加工步骤与实施例二基本相同。所不同的是，无需设置在显示器上设置彩色化层，而使LED器件嵌入定位孔的过程包括：
(1)、如图55所示，先采用与实施例一或二相同的方法，将蓝色LED分散液1912喷淋在第一板体面21上，使得蓝色LED器件102在第一、二磁性部12、26的磁场作用下嵌入到第二定位孔3412中并保持第一、二键合层11、35相互贴紧，由于尺寸的原因，蓝色LED器件102无法嵌入到第一、三定位孔3411、3413中；
(2)、如图56所示，采用同样的方法将红色LED分散液1911喷淋在第一板体面21上，使得红色LED器件101在第一、二磁性部12、26的磁场作用下嵌 入到第一定位孔3411中并保持第一、二键合层11、35相互贴紧，由于第二定位孔3412已被占满，而第三定位孔3413太小，红色LED器件101无法嵌入到第二、三定位孔3412、3413中；
(3)、如图57所示，采用同样的方法将绿色LED分散液1913喷淋在第一板体面21上，使得绿色LED器件103在第一、二磁性部12、26的磁场作用下嵌入到第三定位孔3413中并保持第一、二键合层相互11、35贴紧，由于第一、二定位孔3411、3412已被占满，其也无法嵌入到第一、二定位孔3411、3412中。
通过上述步骤，可实现将三种不同颜色的LED器件101、102、103嵌入到各自对应的定位孔中，并与相应的焊盘贴紧，最终形成图58所示的彩色化显示器300。
此外，需要说明的是，本说明书中所描述的具体实施例，其各部分名称等可以不同，凡依本发明专利构思所述的构造、特征及原理所做的等效或简单变化，均包括于本发明专利的保护范围内。本发明所属技术领域的技术人员可以对所描述的具体实施例做各种各样的修改或补充或采用类似的方式替代，只要不偏离本发明的结构或者超越本权利要求书所定义的范围，均应属于本发明的保护范围。

Claims (42)

  1. 一种LED阵列装置的制造方法，其特征为：
    提供多个垂直结构的LED器件，所述LED器件的内侧和外侧分别具有第一电极和第二电极，所述第一电极上设有由软磁性金属构成的第一磁性部，所述第一磁性部的表面设有第一键合层；
    提供一母板，所述母板的外侧面为第一板体面，所述第一板体面上定义有构成阵列的多个键合位，所述键合位上设有由硬磁性材料构成的第二磁性部；以及，采用以下加工步骤：
    步骤一、在所述第一板体面上设置无磁性绝缘的基础层；
    步骤二、在所述基础层上设置驱动电路层，所述驱动电路层包括多个焊盘以及连接到所述焊盘的驱动电路，所述焊盘处于母板的键合位之上，至少其表面设置为第二键合层；
    步骤三、将所述LED器件散布到驱动电路层上，其第一磁性部受到第二磁性部在焊盘之上磁场的作用力而使LED器件定位地吸附到焊盘上且使所述第一键合层与第二键合层贴紧；
    步骤四、使第一键合层和第二键合层发生键合，由此所述焊盘与LED器件的第一电极构成电连接；
    步骤五、使所述基础层与母板相互分离，得到LED阵列装置。
  2. 如权利要求1所述的LED阵列装置的制造方法，其特征为：所述第一磁性部为由铁、镍、锰金属或其合金构成的软磁性金属层。
  3. 如权利要求1所述的LED阵列装置的制造方法，其特征为：所述第一磁性部的厚度为1～200μm。
  4. 如权利要求1所述的LED阵列装置的制造方法，其特征为：所述第一磁性部偏处于LED器件内侧的位置。
  5. 如权利要求4所述的LED阵列装置的制造方法，其特征为：所述第一磁性部厚度不超过LED器件整体厚度的1/2。
  6. 如权利要求4所述的LED阵列装置的制造方法，其特征为：所述第一磁性部与第一电极之间还垫设有无磁金属层。
  7. 如权利要求4所述的LED阵列装置的制造方法，其特征为：所述第一键合层的厚度不超过第一磁性部厚度的1/2。
  8. 如权利要求1所述的LED阵列装置的制造方法，其特征为：所述第一键合层为低熔点金属层。
  9. 如权利要求1所述的LED阵列装置的制造方法，其特征为：所述母板为无磁性的金属板。
  10. 如权利要求1所述的LED阵列装置的制造方法，其特征为：所述第二磁性部为铝镍钴系永磁合金、铁铬钴系永磁合金、永磁铁氧体、稀土永磁材料或上述材料构成的复合硬磁性材料。
  11. 如权利要求1所述的LED阵列装置的制造方法，其特征为：所述第二磁性部由钕铁硼合金构成。
  12. 如权利要求1所述的LED阵列装置的制造方法，其特征为：所述母板的键合位设有容纳孔，所述第二磁性部嵌设在容纳孔之内。
  13. 如权利要求12所述的LED阵列装置的制造方法，其特征为：所述容纳孔通过激光雕刻、掩膜蚀刻或掩膜电解的工艺方法在母板的第一板体面上形成。
  14. 如权利要求12所述的LED阵列装置的制造方法，其特征为：在母板的容纳孔中填充硬磁性材料的粉末，对母板进行高温处理，使得容纳孔之内的硬磁性材料粉末烧结为第二磁性部。
  15. 如权利要求14所述的LED阵列装置的制造方法，其特征为：所述容纳孔为通孔。
  16. 如权利要求14所述的LED阵列装置的制造方法，其特征为：所述母板由熔点大于1500℃的无磁性金属或合金制作而成。
  17. 如权利要求12所述的LED阵列装置的制造方法，其特征为：在母板上设置完第二磁性部之后对母板的第一板体面进行抛光处理和降粘处理。
  18. 如权利要求1所述的LED阵列装置的制造方法，其特征为：还包括对所述第二磁性部进行充磁。
  19. 如权利要求18所述的LED阵列装置的制造方法，其特征为：在所述步骤二和步骤三之间对第二磁性部进行充磁。
  20. 如权利要求1所述的LED阵列装置的制造方法，其特征为：所述基础层为绝缘、无磁性且具有抗拉伸性能的有机膜层。
  21. 如权利要求20所述的LED阵列装置的制造方法，其特征为：所述基础层为聚酰亚胺膜。
  22. 如权利要求1所述的LED阵列装置的制造方法，其特征为：在所述驱动电路层中，所述焊盘的节距为LED器件尺寸的1.2～5.0倍。
  23. 如权利要求1所述的LED阵列装置的制造方法，其特征为：所述第二键合层为低熔点的金属层。
  24. 如权利要求1所述的LED阵列装置的制造方法，其特征为：所述驱动电路层上还设有定位层，所述定位层由绝缘材料制作而成，其厚度为所述LED器件高度的0.6～2.0倍，所述定位层包括与键合位相对应的定位孔。
  25. 如权利要求24所述的LED阵列装置的制造方法，其特征为：所述定位孔的尺寸为所述LED器件尺寸的1.1～1.5倍。
  26. 如权利要求24所述的LED阵列装置的制造方法，其特征为：所述定位层为光敏树脂涂层，所述定位孔采用黄光工艺制作而成。
  27. 如权利要求24所述的LED阵列装置的制造方法，其特征为：所述定位层为有机硅涂层、聚酰亚胺涂层或耐高温油墨层，所述定位孔由激光雕刻工艺、掩膜蚀刻工艺或微纳米压印工艺形成。
  28. 如权利要求24所述的LED阵列装置的制造方法，其特征为：所述定位孔为圆形，所述LED器件具有圆形的轮廓。
  29. 如权利要求24所述的LED阵列装置的制造方法，其特征为：
    所述LED器件至少包括尺寸依次递减的第一LED器件、第二LED器件和第三LED器件，第一LED器件、第二LED器件和第三LED器件具有不同的发光颜色；
    所述定位孔至少包括尺寸依次递减的第一定位孔、第二定位孔和第三定位孔，第一定位孔、第二定位孔和第三定位孔的尺寸分别为所述第一LED器件、第二LED 器件和第三LED器件的1.1～1.5倍；以及，
    在步骤三中，依次将第一LED器件、第二LED器件和第三LED器件散布到所述驱动电路层上，使得第一LED器件、第二LED器件和第三LED器件依次嵌入到第一开孔、第二开孔和第三开孔中。
  30. 如权利要求29所述的LED阵列装置的制造方法，其特征为：所述第一、二、三LED器件尺寸的相邻比例为1.6～2.0。
  31. 如权利要求1所述的LED阵列装置的制造方法，其特征为：在所述步骤三中，先将LED器件分散到液体中形成LED器件的分散液，再使所述分散液与驱动电路层接触，由此使分散液中的LED器件被吸附到所述焊盘上。
  32. 如权利要求1所述的LED阵列装置的制造方法，其特征为：在所述步骤三中，还设有清除机制以对吸附不良或位置不佳的LED器件进行清除。
  33. 如权利要求32所述的LED阵列装置的制造方法，其特征为：所述清除机制为采用液体或气体对驱动电路层的表面进行冲洗。
  34. 如权利要求32所述的LED阵列装置的制造方法，其特征为：所述清除机制为在所述母板上施加机械振动，以将吸附不良或位置不佳的LED器件震落。
  35. 如权利要求32所述的LED阵列装置的制造方法，其特征为：所述清除机制 为在母板的外侧面之上施加反向磁场，以将吸附不良或位置不佳的LED器件吸掉。
  36. 如权利要求32所述的LED阵列装置的制造方法，其特征为：所述清除机制为在母板的外侧面之上施加粘性物，以将吸附不良或位置不佳的LED器件粘掉。
  37. 如权利要求1所述的LED阵列装置的制造方法，其特征为：在步骤四之后，还进一步在第二电极上覆盖一顶部导电层以构成LED器件的第二电极连接。
  38. 如权利要求37所述的LED阵列装置的制造方法，其特征为：所述顶部导电层为透明导电膜或部分与所述第二电极接触的非透明导电膜。
  39. 如权利要求37所述的LED阵列装置的制造方法，其特征为：在所述定位层上覆盖填补层，所述填补层渗入并填补掉LED器件与定位层之间的缝隙；对所述填补层进行固化和图形化以形成露出LED器件第二电极的露出口；以及，在填补层及露出口上设置所述顶部导电层以形成LED器件的第二电极连接。
  40. 如权利要求39所述的LED阵列装置的制造方法，其特征为：所述填补层为油墨层。
  41. 如权利要求39所述的LED阵列装置的制造方法，其特征为：所述填补层为光敏树脂涂层。
  42. 如权利要求41所述的LED阵列装置的制造方法，其特征为：为黑色或深色的光敏树脂涂层。
PCT/CN2019/079817 2018-05-12 2019-03-27 一种led阵列装置的制造方法 WO2019218775A1 (zh)

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