TWI688320B - 轉置方法及轉置裝置 - Google Patents

轉置方法及轉置裝置 Download PDF

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TWI688320B
TWI688320B TW107137874A TW107137874A TWI688320B TW I688320 B TWI688320 B TW I688320B TW 107137874 A TW107137874 A TW 107137874A TW 107137874 A TW107137874 A TW 107137874A TW I688320 B TWI688320 B TW I688320B
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Taiwan
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micro
grooves
elements
extraction
magnetic force
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TW107137874A
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TW202017455A (zh
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牛慈伶
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友達光電股份有限公司
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Priority to TW107137874A priority Critical patent/TWI688320B/zh
Priority to CN201910405780.0A priority patent/CN110137318B/zh
Priority to US16/596,663 priority patent/US11222801B2/en
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Publication of TW202017455A publication Critical patent/TW202017455A/zh

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Abstract

一種轉置方法，包括下列步驟：提供具有多個凹槽的提取元件；提供第一磁力，能吸引多個微元件向提取元件的多個凹槽移動；在提供第一磁力的情況下，令提取元件接觸多個微元件，以使多個微元件嵌入提取元件的多個凹槽；令多個微元件從提取元件的多個凹槽轉移至接收元件。此外，一種轉置裝置也被提出。

Description

轉置方法及轉置裝置
本發明是有關於一種轉置方法及轉置裝置。
巨量轉移微元件的技術已使用在新興電子裝置的製程中。以發光二極體顯示裝置的製程為例，發光二極體顯示裝置的製程包括下列步驟：提供具有多個轉置凸塊的彈性轉置頭；提供一個發光二極體陣列；使彈性轉置頭的轉置凸塊與發光二極體陣列的多個發光二極體接觸，進而提取之；利用彈性轉置頭將多個發光二極體轉移到接收元件上，進而完成發光二極體顯示裝置。然而，當擴大轉置製程的規模時，目前使用具有多個轉置凸塊的彈性轉置頭進行轉置的方法面臨製程良率不高、精度不高且量產不易的問題。
本發明提供一種轉置方法及轉置裝置，製程良率高。
本發明的一種轉置方法，包括下列步驟：提供具有多個凹槽的提取元件；提供第一磁力，用以吸引多個微元件向提取元件的 多個凹槽移動；在提供第一磁力的情況下，令提取元件接觸多個微元件，以使多個微元件嵌入提取元件的多個凹槽；令多個微元件從提取元件的多個凹槽轉移至接收元件。
本發明的一種轉置裝置，包括提取元件、第一磁性元件以及控制元件。提取元件具有多個凹槽。至少部分的提取元件設置於第一磁性元件與多個微元件之間。第一磁性元件用以提供第一磁力，用以吸引多個微元件向提取元件的多個凹槽移動。在第一磁性元件提供第一磁力的情況下，控制元件令提取元件接觸多個微元件，以使多個微元件嵌入提取元件的多個凹槽。
基於上述，在轉置多個微元件的過程中，是利用微元件和提取元件之間的機械力與第一磁力的平衡，將微元件精準地定位於凹槽中。接著，再利用類似於凹版印刷(gravure)的方式將提取元件之凹槽內的微元件轉移至接收元件。藉此，多個微元件能夠與接收元件精準地對位，進而提高製造良率。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下
10、11、10R、10G、10B:微元件
20、20D:載體
30:接收元件
100、100D:轉置裝置
110、110’、110D、110E:提取元件
110a:表面
112、112a、112b、112R、112G、112B:凹槽
120、120A、120B、120C、120D:第一磁性元件
122、124、126a、126b:磁極
130:提取滾軸
140:控制元件
150:移除元件
230:接收滾軸
F1:第一磁力
F2:第二磁力
F3:第三磁力
L:雷射
M:磁性材料
P1、P2、P11、P12、P21、P22:間距
圖1A至圖1F為本發明一實施例之轉置多個微元件的流程示意圖。
圖2示出本發明一實施例之轉置裝置的第一磁性元件。
圖3示出本發明另一實施例之轉置裝置的第一磁性元件。
圖4示出本發明又一實施例之轉置裝置的第一磁性元件。
圖5A至圖5E為本發明另一實施例之轉置多個微元件的流程示意圖。
圖6示出本發明又一實施例之轉置多個微元件的流程的一部分。
圖7示出本發明另一實施例之轉置裝置的提取元件。
圖8示出本發明一實施例之轉置裝置的多種提取元件。
圖9示出本發明另一實施例之轉置裝置的提取元件。
圖10示出本發明再一實施例之多個微元件轉置於接收元件的過程。
現將詳細地參考本發明的示範性實施例，示範性實施例的實例說明於附圖中。只要有可能，相同元件符號在圖式和描述中用來表示相同或相似部分。
應當理解，當諸如層、膜、區域或基板的元件被稱為在另一元件“上”或“連接到”另一元件時，其可以直接在另一元件上或與另一元件連接，或者中間元件可以也存在。相反，當元件被稱為“直接在另一元件上”或“直接連接到”另一元件時，不存在中間元件。如本文所使用的，“連接”可以指物理及/或電性連接。再者，“電性連接”或“耦合”係可為二元件間存在其它元件。
本文使用的“約”、“近似”、或“實質上”包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值，考慮到所討論的測量和與測量相關的誤差的特定數量(即，測量系統的限制)。例如，“約”可以表示在所述值的一個或多個標準偏差內，或±30%、±20%、±10%、±5%內。再者，本文使用的“約”、“近似”或“實質上”可依光學性質、蝕刻性質或其它性質，來選擇較可接受的偏差範圍或標準偏差，而可不用一個標準偏差適用全部性質。
除非另有定義，本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是，諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義，並且將不被解釋為理想化的或過度正式的意義，除非本文中明確地這樣定義。
圖1A至圖1F為本發明一實施例之轉置多個微元件的流程示意圖。請參照圖1A至圖1F，轉置多個微元件10的流程包括圖1A至圖1C所示的填充製程(filling process)及圖1D至圖1F所示的接合製程(bonding process)，以下配合圖示舉例說明之。
請參照圖1A，在填充製程中，首先，提供多個微元件10與至少一個載體20。在本實施例中，多個微元件10可以是迷你發光二極體(mini-LEDs)、微型光二極體(micro-LEDs)或其它尺寸的發光二極體。需說明的是，微元件10並不限於發光二極體；在 其它實施例中，微元件10也可以是需要被巨量轉移之其它種類的元件。在本實施例中，多個微元件10可設置於一個載體20上。舉例而言，載體20可以是一個儲存槽(tank)，但本發明不以此為限；在其它實施例中，載體20也可以是其它適當構件，例如但不限於：藍膜(Blue tape)。
請參照圖1A，接著，利用轉置裝置100提取多個微元件10。轉置裝置100包括提取元件110。提取元件110具有多個凹槽112。多個凹槽112用以被嵌入多個微元件10。換句話說，多個凹槽112是用以咬合多個微元件10。舉例而言，在本實施例中，每一凹槽112之至少部分的輪廓與每一微元件10之至少部分的輪廓可以相同或相似，但本發明不以此為限。在本實施例中，提取元件110的材質以具有彈性的材料為佳，例如但不限於：一種以紫外綫固化的聚氨酯類樹脂。
請參照圖1A，轉置裝置100還包括第一磁性元件120。至少部分的提取元件110設置於第一磁性元件120與多個微元件10之間。第一磁性元件120用以提供第一磁力F1，以吸引多個微元件10向提取元件110的多個凹槽112移動。在本實施例中，微元件10本身具有磁性材料或具有能被磁化的構件(例如但不限於：發光二極體的電極)，因此微元件10會被第一磁性元件120所吸引。
在本實施例中，轉置裝置100還可選擇性地包括提取滾軸130。提取元件110設置於提取滾軸130上。在本實施例中，第 一磁性元件120可選擇性地設置於提取滾軸130與提取元件110之間，但本發明不以此為限。在其它實施例中，第一磁性元件120也可設置於其它適當位置，例如但不限於：第一磁性元件120可與提取滾軸130整合。
請參照圖1A，在本實施例中，提取元件110的每一凹槽112與提取滾軸130可在一個徑向方向上排列，而第一磁力F1可選擇性地平行於徑向方向，但本發明不以此為限。以下利用圖2、圖3及圖4舉例說明第一磁性元件120之可能實施的結構。
圖2示出本發明一實施例之轉置裝置的第一磁性元件。在圖2的實施例中，第一磁性元件120A可以選擇性地是一個永久磁鐵，具有一個第一磁極122(例如：S極)及一個第二磁極124(例如：N極)。請參照圖1A及圖2，若第一磁性元件120A應用在圖1A的實施例中，第二磁極124可選擇性地包圍第一磁極122，以提供平行於所述徑向方向的第一磁力F1，但本發明不以此為限。
圖3示出本發明另一實施例之轉置裝置的第一磁性元件。在圖3的實施例中，第一磁性元件120B可由多個永久磁鐵所組成，其中每一永久磁鐵具有一個第一磁極122(例如：S極)與相對於第一磁極122的一個第二磁極124(例如：N極)。請參照圖1A及圖3，若第一磁性元件120B應用在圖1A的實施例中，多個永久磁鐵的多個第二磁極124可選擇性地設置於多個永久磁鐵的多個第一磁極121的周圍，以提供平行於所述徑向方向的第一磁力F1。
圖4示出本發明又一實施例之轉置裝置的第一磁性元件。在圖4的實施例中，第一磁性元件120C可由至少一個電磁鐵所組成，每一電磁鐵具有一個第一磁極126a(例如：S極)與相對於第一磁極126a的一個第二磁極126b(例如：N極)。舉例而言，每一電磁鐵可包括具有電流的線圈(coil)126，但本發明不以此為限。請參照圖1A及圖4，若第一磁性元件120C應用在圖1A的實施例中，第一磁性元件120C可包括多個電磁鐵，多個電磁鐵的多個第二磁極126b可選擇性地設置於多個電磁鐵的多個第一磁極126a的周圍，以提供平行於所述徑向方向的第一磁力F1，但本發明不以此為限。
請參照圖1B及圖1C，接著，在提供第一磁力F1的情況下，令提取元件110接觸多個微元件10，以使多個微元件10嵌入提取元件110的多個凹槽112。具體而言，轉置裝置100還包括控制元件140。在第一磁性元件120提供第一磁力F1的情況下，控制元件140令提取元件110接觸多個微元件10，以使多個微元件10嵌入提取元件110的多個凹槽112。舉例而言，在本實施例中，控制單元140(例如但不限於：電腦)可透過適當構件(例如：馬達、齒輪等)令提取滾軸130轉動且向多個微元件10移動，以使提取滾軸130上的提取元件110接觸多個微元件10。提取元件110接觸多個微元件10後，提取滾軸130帶動提取元件110的多個凹槽112相對於多個微元件10運動(例如：轉動)，進而提取多個微元件10。
在提取元件110提取多個微元件10的過程中，透過微元件10與提取元件110的凹槽112之間的機械力(mechanical force)，微元件10與凹槽112能粗略地幾何對位。特別是，在提取元件110與微元件10接觸時，第一磁力F1同時作用在微元件10上，而使微元件10與凹槽112能夠精準地對位。
請參照圖1C，在提取元件110提取多個微元件10之後，且在多個微元件10轉置於接收元件30(繪於圖1D)之前，若有微元件11與提取元件110之凹槽112的對位不良，而微元件11的一部分位於凹槽112外，可選擇性地移除對位不良的微元件11。具體而言，轉置裝置100還包括移除元件150，在本實施例中，移除元件150例如是刀片(blade)，刀片可直接且輕微地接觸提取元件110的表面110a，當刀片相對於提取元件110運動時(例如刀片固定而提取元件110轉動時)，刀片能從提取元件110上移除對位不良的微元件11。然而，本發明不限於此，在其它實施例中，移除元件150也可以是其它種類的構件，例如：能提供移除磁力的磁性元件，其中所述移除磁力與第一磁力F1的合力指向遠離提取元件110的方向。
請參照圖1D至圖1F，在完成填充製程後(即多個微元件10分別填入提取元件110的多個凹槽112後)，接著，進行接合製程。請參照圖1D，首先，令微元件10脫離提取元件110的凹槽112。在本實施例中，可提供第二磁力F2，以使微元件10脫離提取元件110的凹槽112。舉例而言，在微元件10轉移至接收元 件30前，第一磁力F1可選擇性地仍作用於設置在凹槽112的微元件10上，第二磁力F2的方向與第一磁力F1的方向相反，且第二磁力F2的大小大於第一磁力F1的大小。也就是說，第一磁力F1與第二磁力F2的合力指向遠離提取元件110且朝向接收元件30的方向。藉此，微元件10能從提取元件110的凹槽112轉移至接收元件30上。在本實施例中，接收元件30例如是驅動線路基板，多個微元件10與接收元件30可彼此電性連接，進而形成一個發光二極體顯示面板，但本發明不以此為限。
舉例而言，在本實施例中，上述的第二磁力F2可由第二磁性元件160提供。本實施例的轉置裝置100可選擇性地包括第二磁性元件160，其中接收元件30可設置於提取元件110與第二磁性元件160之間。然而，本發明不以此為限，在其它實施例中，第二磁力F2也可由接收元件30本身(例如：驅動線路基板之帶有電流的導線)提供。
請參照圖1D，在本實施例中，於微元件10脫離凹槽112前及/或微元件10脫離凹槽112的過程中，可選擇性地利用雷射L熔融預先形成在微元件10及/或接收元件30上的焊料(未繪示)。藉此，在微元件10從凹槽112轉移至接收元件30的同時，微元件10還能與接收元件30電性連接。然而，本發明不以此為限，在其它實施例中，也可在微元件10轉移至接收元件30後，再電性連接微元件10與接收元件30。
請參照圖1E及圖1F，接著，重複進行如圖1D所示的動 作，直到提取元件110之凹槽112中的微元件10均被轉移至接收元件30，於此便完成轉置多個微元件10的流程。
值得一提的是，在上述轉置多個微元件10的過程中，是利用微元件10和提取元件110之間的機械力(mechanical force)與第一磁力F1的平衡，將微元件10精準地定位於凹槽112中。接著，再利用類似於凹版印刷(gravure)的方式將提取元件110之凹槽112內的微元件10轉移至接收元件30。藉此，多個微元件10能夠與接收元件30精準地對位，進而提高製造良率。
此外，在本實施例中，提取元件110是設置於提取滾軸130上，且被填充於提取元件110之多個凹槽112中的多個微元件10是透過提取滾軸130的轉動而被轉移至接收元件30上。因此，轉移多個微元件10的速度快、效率高。
圖5A至圖5E為本發明另一實施例之轉置多個微元件的流程示意圖。圖5A至圖5E所示之轉置多個微元件10的流程與圖1A至圖1F所示之轉置多個微元件10的流程類似，兩者主要的差異在於：圖5A至圖5E之實施例所使用的轉置裝置100D的提取元件110D可以是平面的凹版。以下簡要地說明5A至圖5E所示之轉置多個微元件10的流程。
請參照圖5A，首先，提供多個微元件10與至少一個載體20D。在本實施例中，為搭配提取元件110D的形狀，載體20D的形狀可選擇性地為平板狀，但本發明不以此為限。
請參照圖5A、圖5B及圖5C，接著，利用轉置裝置100D 提取多個微元件10。轉置裝置100D包括提取元件110D。提取元件110D具有多個凹槽112，用以被嵌入多個微元件10。在本實施例中，提取元件110D例如是平面的凹版，但本發明不以此為限。
請參照圖5A及圖5B，具體而言，可先令多個微元件10嵌入多個凹槽112。在本實施例中，於多個微元件10嵌入多個凹槽112的過程中，可選擇性地利用第一磁性元件120D所提供的第一磁力F1吸引多個微元件10向提取元件110D的多個凹槽112移動，而使多個微元件10更精準地嵌入提取元件110D的多個凹槽112。然而，本發明不限於此，在其它實施例中，於多個微元件10嵌入多個凹槽112的過程中，也可不使用第一磁力F1吸引多個微元件10，而僅使用提取元件110D的多個凹槽112與多個微元件10之間的機械力提取微元件10。
請參照圖5B及圖5C，接著，移除載體20D，以使載體20D與設置於凹槽112中的多個微元件10分離。在本實施例中，於載體20D與多個微元件10分離的過程中，可使用第一磁力F1吸引多個微元件10，以使多個微元件10留在多個凹槽112中。藉此，多個微元件10便不易跟著載體20D移動而從凹槽112中脫落。
請參照圖5D至圖5E，在完成填充製程後(即多個微元件10分別填入提取元件110D的多個凹槽112後)，接著，進行接合製程。請參照圖5D，首先，可令微元件10脫離提取元件110D的凹槽112。在本實施例中，可提供第二磁力F2，以使微元件10 脫離提取元件110D的凹槽112。在本實施例中，第二磁力F2由第二磁性元件160D所提供，第二磁性元件160D可選擇性地配合提取元件110D(即平面凹版)的形狀設計為板狀或塊狀，但本發明不以此為限。
請參照圖5D及圖5E，在本實施例中，於微元件10脫離凹槽112前及/或微元件10脫離凹槽112的過程中，可選擇性地利用雷射L熔融預先形成在微元件10及/或接收元件30上的焊料(未繪示)。藉此，在微元件10從凹槽112轉移至接收元件30的同時，微元件10還能與接收元件30電性連接，但本發明不以此為限。
圖6示出本發明又一實施例之轉置多個微元件的流程的一部分。具體而言，圖6示出令微元件10脫離提取元件110之凹槽112的另一種方法。在圖6的實施例中，微元件10本身具有磁性材料M(例如但不限於：磁粉)，欲使一批微元件10脫離凹槽112時，第一磁性元件120可不提供吸引所述批微元件10的第一磁力F1而提供排斥所述批微元件10的第三磁力F3；藉此，轉置裝置100能將微元件10自提取元件110的凹槽112中釋出，進而將提取元件110轉移至接收元件30上。圖6所示之使微元件10脫離凹槽112的方法可用以取代圖1D所示之使微元件10脫離凹槽112的方法。
圖7示出本發明另一實施例之轉置裝置的提取元件110E。圖7之提取元件110E與圖1F的提取元件110的差異在於：圖1F 的提取元件110的多個凹槽112是以相同的間距P1排列，而圖7的提取元件110E的多個凹槽112a、112b可以不同的間距P11、P12排列。具體而言，在圖7的實施例中，提取元件110E具有一個第一區以及第一區外的一個第二區，提取元件110E之第一區上的多個凹槽112a在提取元件110E的運動方向上以第一間距P11排列，提取元件110E之第二區上的多個凹槽112b在提取元件110E的運動方向上以第二間距P12排列，而第一間距P11不同於第二間距P12。
在圖1F的實施例中，利用提取元件110的多個凹槽112將多個微元件10轉置到接收元件30後，設置於接收元件30上的多個微元件10是以相同的間距P2排列，其中間距P2實質上等於間距P1。若多個微元件10與接收元件30彼此電性連接而形成發光二極體顯示面板，發光二極體顯示面板具有單一解析度。
然而，在圖7的實施例中，利用提取元件110E的多個凹槽112a、112b將多個微元件10轉置到接收元件30後，設置於接收元件30之第一區上的多個微元件10是以間距P21排列，設置於接收元件30之第二區上的多個微元件10是以間距P22排列，其中間距P21實質上等於第一間距P11，間距P22實質上等於第二間距P12，間距P21與間距P22不同。藉此，在多個微元件10轉置於接收元件30並與接收元件30電性連接後，分離接收元件30的第一區(例如：接收元件30的左側區)與接收元件30的第二區(例如：接收元件30的右側區)，即可獲得具有不同解析度的 多種發光二極體顯示面板。
圖8示出本發明一實施例之轉置裝置的多種提取元件。在圖8的實施例中，欲轉置的多個微元件10R、10G、10B包括多個第一微元件10R、多個第二微元件10G及多個第三微元件10B。第一微元件10R、第二微元件10G及第三微元件10B例如是分別用以發出第一色光、第二色光及第三色光的發光二極體。第一色光、第二色光及第三色光互不相同。舉例而言，第一色光、第二色光及第三色光可以是紅光、綠光及藍光，但本發明不以此為限。
在圖8的實施例中，第一微元件10R的形狀、第二微元件10G的形狀及第三微元件10B的形狀互不相同。提取元件110包括第一提取元件110R、第二提取元件110G及第三提取元件110B，分別具有多個第一凹槽112R、多個第二凹槽112G及多個第三凹槽112B。第一凹槽112R的形狀、第二凹槽112G的形狀及多個第三凹槽112B的形狀互不相同，且第一凹槽112R的形狀、第二凹槽112G的形狀及多個第三凹槽112B的形狀分別對應第一微元件10R的形狀、第二微元件10G的形狀及第三微元件10B的形狀。
在圖8的實施例中，第一微元件10R、多個第二微元件10G及多個第三微元件10B可分別置於不同的多個載體20中，而分別利用第一提取元件110R、第二提取元件110G及第三提取元件110B提取第一微元件10R、多個第二微元件10G及多個第三微元件10B。本領域具有通常知識者根據圖8及前述說明應能將圖8 所示的多種提取元件110R、110B、110G應用在前述轉置多個微元件的過程，於此便不再重述。
圖9示出本發明另一實施例之轉置裝置的提取元件。圖9的單一個提取元件110’即具有前述之第一提取元件110R的第一凹槽112R、第二提取元件110G的第二凹槽112G及第三提取元件110B的第三凹槽112B。在圖9的實施例中，第一微元件10R、多個第二微元件10G及多個第三微元件10B可置於同一載體20中，而利用具有不同凹槽112R、112G、112B的單一提取元件110’於同一次提取過程中提取第一微元件10R、第二微元件10G及第三微元件10B。本領域具有通常知識者根據圖9及前述說明應能將圖9所示出的提取元件110’應用在前述轉置多個微元件的過程，於此便不再重述。
圖10示出本發明再一實施例之多個微元件轉置於接收元件的過程。在圖10的實施例中，接收元件30具有可撓性，例如聚醯亞胺(polyimide)或塑膠薄膜(聚對苯二甲酸乙二酯(Poly(Ethylene Terephthalate)；PET)、聚萘二甲酸乙二酯(Poly(Ethylene Naphthalate)；PEN)膜、聚醚(Polyethersulfone；PES))或超薄玻璃(ultra-thin glass)或金屬基板(metal foil)，而接收元件30可設置於接收滾軸230上。接收滾軸230用以帶動接收元件30相對於嵌入提取元件110之多個凹槽112的多個微元件10運動，進而使提取元件110之多個凹槽112的多個微元件10轉置於接收元件30上。簡言之，在本實施例中，係利用滾動對滾動(roll to roll) 的方式轉置多個微元件10，能快速且有效率地轉置多個微元件10。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
10:微元件
20:載體
100:轉置裝置
110:提取元件
112:凹槽
120:第一磁性元件
130:提取滾軸
140:控制元件
F1:第一磁力

Claims (16)

  1. 一種轉置方法，包括：提供一提取元件，具有多個凹槽；提供一第一磁力，用以吸引多個微元件向該提取元件的該些凹槽移動；在提供該第一磁力的情況下，令該提取元件接觸該些微元件，以使該些微元件嵌入該提取元件的該些凹槽；令該提取元件設置於一提取滾軸上，其中該提取滾軸用以帶動該提取元件的該些凹槽相對於該些微元件運動；以及令該些微元件從該提取元件的該些凹槽轉移至一接收元件。
  2. 如申請專利範圍第1項所述的轉置方法，更包括：令該接收元件設置於一接收滾軸上，其中該接收滾軸用以帶動該接收元件相對於嵌入該些凹槽的該些微元件運動。
  3. 如申請專利範圍第1項所述的轉置方法，其中嵌入該些凹槽之該些微元件的至少一者的一部分位於該些凹槽外，而該轉置方法更包括：在該些微元件轉移至該接收元件前，移除該些微元件的該至少一者。
  4. 如申請專利範圍第1項所述的轉置方法，其中令該些微元件從該提取元件的該些凹槽轉移至該接收元件的步驟包括：提供一第二磁力，以使該些微元件脫離該提取元件的該些凹槽。
  5. 如申請專利範圍第4項所述的轉置方法，其中該第一磁力的方向與該第二磁力的方向相反，且該第二磁力的大小大於該第一磁力的大小。
  6. 如申請專利範圍第1項所述的轉置方法，其中該些凹槽包括多個第一凹槽以及多個第二凹槽，該些第一凹槽以一第一間距排列，該些第二凹槽以一第二間距排列，而該第一間距不同於該第二間距。
  7. 如申請專利範圍第1項所述的轉置方法，其中該些凹槽包括一第一凹槽及一第二凹槽，該第一凹槽的形狀不同於該第二凹槽的形狀，該些微元件包括一第一微元件及一第二微元件，該第一微元件的形狀不同於該第二微元件的形狀，該第一微元件的形狀對應於該第一凹槽的形狀，而該第二微元件的形狀對應於該第二凹槽的形狀。
  8. 如申請專利範圍第1項所述的轉置方法，其中該些微元件的每一個具有一磁性材料。
  9. 一種轉置裝置，用以轉置多個微元件，該轉置裝置包括：一提取元件，具有多個凹槽；一第一磁性元件，其中至少部分的該提取元件設置於該第一磁性元件與該些微元件之間，該第一磁性元件用以提供一第一磁力，該第一磁力用以吸引該些微元件向該提取元件的該些凹槽移動； 一控制元件，在該第一磁性元件提供該第一磁力的情況下，令該提取元件接觸該些微元件，以使該些微元件嵌入該提取元件的該些凹槽；以及一提取滾軸，其中該提取元件設置於該提取滾軸上，而該控制元件令該提取滾軸帶動該提取元件的該些凹槽相對於該些微元件運動。
  10. 如申請專利範圍第9項所述的轉置裝置，更包括：一接收滾軸；以及一接收元件，設置於該接收滾軸上，其中該控制元件令該接收滾軸帶動該接收元件相對於嵌入該些凹槽的該些微元件運動。
  11. 如申請專利範圍第9項所述的轉置裝置，其中嵌入該些凹槽的該些微元件的至少一者的一部分位於該些凹槽外，而該轉置裝置更包括：一移除元件，其中該控制元件令該移除元件移除該些微元件的該至少一者。
  12. 如申請專利範圍第9項所述的轉置裝置，更包括：一第二磁性元件，用以提供一第二磁力，以使該些微元件脫離該提取元件的該些凹槽。
  13. 如申請專利範圍第12項所述的轉置裝置，其中該第一磁力的方向與該第二磁力的方向相反，且該第二磁力的大小大於該第一磁力的大小。
  14. 如申請專利範圍第9項所述的轉置裝置，其中該第一磁性元件用以提供一第三磁力，以使該些微元件脫離該提取元件的該些凹槽。
  15. 如申請專利範圍第9項所述的轉置裝置，其中該些凹槽包括多個第一凹槽以及多個第二凹槽，該些第一凹槽以一第一間距排列，該些第二凹槽以一第二間距排列，而該第一間距不同於該第二間距。
  16. 如申請專利範圍第9項所述的轉置裝置，其中該些凹槽包括一第一凹槽及一第二凹槽，該第一凹槽的形狀不同於該第二凹槽的形狀，該些微元件包括一第一微元件及一第二微元件，該第一微元件的形狀不同於該第二微元件的形狀，該第一微元件的形狀對應於該第一凹槽的形狀，而該第二微元件的形狀對應於該第二凹槽的形狀。
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