WO2019155886A1 - 近接露光装置、近接露光方法、及び近接露光装置用光照射装置 - Google Patents

近接露光装置、近接露光方法、及び近接露光装置用光照射装置 Download PDF

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Publication number
WO2019155886A1
WO2019155886A1 PCT/JP2019/002128 JP2019002128W WO2019155886A1 WO 2019155886 A1 WO2019155886 A1 WO 2019155886A1 JP 2019002128 W JP2019002128 W JP 2019002128W WO 2019155886 A1 WO2019155886 A1 WO 2019155886A1
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WIPO (PCT)
Prior art keywords
light
exposure
workpiece
mask
alignment mark
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PCT/JP2019/002128
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English (en)
French (fr)
Japanese (ja)
Inventor
工 富樫
榎本　芳幸
智紀 原田
洋徳 川島
Original Assignee
株式会社ブイ・テクノロジー
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Application filed by 株式会社ブイ・テクノロジー filed Critical 株式会社ブイ・テクノロジー
Priority to JP2019570664A priority Critical patent/JPWO2019155886A1/ja
Priority to CN201980012676.3A priority patent/CN111699440A/zh
Priority to KR1020207020122A priority patent/KR20200119235A/ko
Publication of WO2019155886A1 publication Critical patent/WO2019155886A1/ja

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7038—Alignment for proximity or contact printer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

Definitions

  • the present invention relates to a proximity exposure apparatus, a proximity exposure method, and a light irradiation apparatus for a proximity exposure apparatus.
  • a mask on which an exposure pattern is formed is placed close to a substrate to be exposed coated with a photosensitive material with a gap of several tens of ⁇ m to several hundreds of ⁇ m, and exposure light from a light illumination device is irradiated through the mask.
  • the exposure pattern is transferred to the substrate to be exposed.
  • an integrator is used in order to improve the uniformity of the illuminance of the light irradiated to the mask.
  • Patent Document 1 the parallelism of exposure illumination light is corrected by locally changing the curvature of the reflecting surface of the optical path reflecting mirror using a reference calibration mask. Next, a pattern is printed on the substrate using an exposure mask, the transferred pattern is measured, and the expansion and contraction of the mask is corrected by locally changing the curvature of the optical path reflecting mirror.
  • Patent Document 2 includes a collimation mirror and an irradiation angle changing mechanism that changes an irradiation angle of light for pattern exposure reflected by the collimation mirror, and a deviation amount between a mask alignment mark and a substrate alignment mark
  • a proximity exposure apparatus is known in which a collimation mirror is deformed by operating an irradiation angle changing mechanism based on a gap between a mask and a substrate.
  • the projection image of the alignment mark of the mask is received by the light of the first light irradiation unit, the image processing is performed to detect / store the relative position, and the workpiece is detected by the light of the second light irradiation unit. Detect and store the relative position by receiving and processing the alignment mark of the mask and moving the workpiece and / or mask so that both alignment marks overlap, and the mask and workpiece are positioned accurately. A combination method and apparatus is described.
  • Patent Document 1 a calibration mask is required separately, and there is a problem that a final exposure position can be obtained only after exposure (trial exposure) once. Further, according to Patent Document 2, the illumination means at the time of alignment adjustment is not specifically described. Furthermore, according to Patent Document 3, the alignment of the mask and the workpiece is performed by moving the workpiece and / or the mask, and it is not considered to correct the local distortion of the mask or the workpiece.
  • the present invention has been made in view of the above-described problems, and an object of the present invention is to realize proximity adjustment capable of realizing high-precision alignment adjustment without performing trial exposure and greatly improving exposure accuracy.
  • An exposure apparatus, a proximity exposure method, and a light irradiation apparatus for a proximity exposure apparatus are provided.
  • the above object of the present invention can be achieved by the following constitution.
  • a light source An integrator that uniformly emits light from the light source;
  • a mirror bending mechanism capable of changing the curvature of the reflecting surface, and a reflecting mirror that reflects the light emitted from the integrator;
  • a mask on which an exposure pattern is formed and a work are arranged close to each other through a gap, and light emitted from the reflecting mirror is irradiated onto the work through the mask to transfer the exposure pattern onto the work.
  • An alignment camera that can simultaneously image the projected image of the mask-side alignment mark projected onto the workpiece and the workpiece-side alignment mark using the non-exposure light;
  • a proximity exposure apparatus further comprising: (2)
  • the non-exposure light illuminating means is disposed so as to freely advance and retreat on the optical path of the light from the light source, and blocks the first wavelength region of the light from the light source, thereby allowing the non-exposure light illumination means to
  • the proximity exposure apparatus according to (2) further including another cut filter.
  • the cut filter retracts the light from the light source from the optical path so that the exposure light having the first wavelength region of the light from the light source passes through the mask onto the workpiece.
  • the proximity exposure apparatus according to (2) wherein a shutter for blocking exposure light is configured by irradiating to the optical path and advancing on the optical path.
  • the non-exposure light illuminating unit includes a non-exposure light source that is provided separately from the light source and irradiates the non-exposure light having the second wavelength region. apparatus.
  • the workpiece includes a rectangular exposure region corresponding to the exposure pattern of the mask
  • the alignment camera includes a projected image of the alignment mark on the mask projected onto the workpiece and an alignment on the workpiece side at at least one point on each of the exposure region or the four corners around the exposure region and each side connecting the four corners.
  • the proximity exposure apparatus according to any one of (1) to (7), wherein a mark is imaged simultaneously.
  • a moving mechanism for relatively moving the workpiece and the mask The mirror bending mechanism corrects the curvature of the reflecting mirror so that the projected projection image of the mask-side alignment mark and the center of the workpiece-side alignment mark coincide with each other, and the moving mechanism corrects the mask.
  • the proximity exposure apparatus according to any one of (1) to (8), comprising: (10)
  • the workpiece includes a rectangular exposure region corresponding to the exposure pattern of the mask,
  • the alignment camera is configured to align the mask side projected onto the workpiece at least one point in the exposure area or four corners around the exposure area and each side connecting the four corners when exposing a predetermined number of the workpieces. Simultaneously imaging the projected image of the mark and the alignment mark on the workpiece side; and At the time of exposure of the workpiece after the predetermined number, the alignment camera simultaneously displays the projected image of the mask side alignment mark projected onto the workpiece and the workpiece side alignment mark at the four corners of the workpiece.
  • the control unit determines an average shape of the workpiece based on a shift amount at each position of at least one of the four corners and each side of the predetermined number of workpieces imaged by the alignment camera; and , At the time of exposure of the workpiece after the predetermined number, the curvature correction of the reflecting mirror by the mirror bending mechanism and the relative movement between the mask and the workpiece are shifted at the four corners imaged by the alignment camera.
  • the mirror bending mechanism corrects the curvature of the reflecting mirror so that the projected image of the mask side alignment mark coincides with the center of the workpiece side alignment mark, and the mask and the workpiece are relatively moved.
  • a proximity exposure method comprising: (12) a light source; An integrator that uniformly emits light from the light source; A mirror bending mechanism capable of changing the curvature of the reflecting surface, and a reflecting mirror that reflects the light emitted from the integrator; With A mask on which an exposure pattern is formed and a work are arranged close to each other through a gap, and light emitted from the reflecting mirror is irradiated onto the work through the mask to transfer the exposure pattern onto the work.
  • An alignment camera that can simultaneously image the projected image of the mask-side alignment mark projected onto the workpiece and the workpiece-side alignment mark using the non-exposure light;
  • a light irradiation apparatus for a proximity exposure apparatus further comprising: (13)
  • the non-exposure light illuminating means is disposed so as to freely advance and retreat on the optical path of the light from the light source, and cuts off the first wavelength region of the light from the light source, thereby allowing the non-exposure light illumination means to
  • the cut filter retracts the light from the light source from the optical path so that the exposure light having the first wavelength region of the light from the light source passes through the mask onto the workpiece.
  • the light irradiation apparatus for a proximity exposure apparatus according to (13) wherein a shutter that blocks the exposure light is configured by irradiating to the optical path and advancing on the optical path.
  • the non-exposure light illuminating unit includes a non-exposure light source that is provided separately from the light source and irradiates the non-exposure light having the second wavelength region.
  • Light irradiation device for equipment 17.
  • contact exposure apparatuses of description The workpiece includes a rectangular exposure region corresponding to the exposure pattern of the mask,
  • the alignment camera includes a projected image of the alignment mark on the mask projected onto the workpiece and an alignment on the workpiece side at at least one point on each of the exposure region or the four corners around the exposure region and each side connecting the four corners.
  • the light irradiation apparatus for a proximity exposure apparatus according to any one of (12) to (18), wherein a mark is imaged simultaneously.
  • the light source the integrator for uniformly emitting the light from the light source, and a mirror bending mechanism capable of changing the curvature of the reflection surface, A reflecting mirror that reflects the light emitted from the integrator, and a second wavelength region that is disposed closer to the light source than the reflecting mirror and that is different from the exposure light having the first wavelength region that the photosensitive material of the workpiece is exposed to.
  • the projection image of the mask side alignment mark projected on the workpiece while irradiating the non-exposure light by the non-exposure light illuminating means, and the alignment mark on the workpiece side The curvature of the reflecting mirror is corrected by a mirror bending mechanism so that the projected image of the alignment camera at the same time and the projected image of the alignment mark on the mask side coincide with the center of the alignment mark on the workpiece side. And a relative movement step.
  • highly accurate alignment adjustment can be realized without performing trial exposure, and the exposure accuracy can be greatly improved.
  • FIG. 1 is a front view of a proximity exposure apparatus according to a first embodiment of the present invention. It is a side view which shows the structure of the light irradiation apparatus applied to the proximity exposure apparatus shown in FIG.
  • (A) is a plan view of the alignment mark on the mask side
  • (b) is a plan view of the alignment mark on the workpiece side.
  • (A) is a side view of the main part of the light irradiation device showing a state before alignment adjustment by the mirror bending mechanism
  • (b) is a projection image of the alignment mark on the mask side before alignment adjustment and the workpiece side
  • It is explanatory drawing which shows the positional relationship with an alignment mark.
  • (A) is the principal part side view of the light irradiation apparatus which shows the state adjusted by the mirror bending mechanism
  • (b) is the projection image of the alignment mark on the mask side and the workpiece side alignment mark that have been aligned. It is explanatory drawing which shows a positional relationship. It is a graph which shows the wavelength area
  • (A) shows the imaging position of the mask side alignment mark and workpiece
  • (b) is a figure which shows the external shape of the workpiece
  • the proximity exposure apparatus PE uses a mask M smaller than the workpiece W as a material to be exposed, holds the mask M on a mask stage (mask support portion) 1, and holds the workpiece W on the workpiece stage (workpiece (workpiece)).
  • Pattern exposure from a light irradiation device for a proximity exposure device (hereinafter also simply referred to as a light irradiation device) 3 in a state of being held by a support portion 2 and facing the mask M and the workpiece W in close proximity with a predetermined exposure gap.
  • the pattern of the mask M is exposed and transferred onto the workpiece W by irradiating the mask M with light for use.
  • the work stage 2 is moved stepwise with respect to the mask M in the two axial directions of the X axis direction and the Y axis direction, and exposure transfer is performed for each step.
  • an X-axis stage feed mechanism 5 for moving the X-axis feed base 5a stepwise in the X-axis direction is installed on the apparatus base 4.
  • a Y-axis stage feed mechanism 6 for step-moving the Y-axis feed base 6a in the Y-axis direction is installed in order to move the work stage 2 stepwise in the Y-axis direction.
  • the work stage 2 is installed on the Y-axis feed base 6 a of the Y-axis stage feed mechanism 6.
  • the work W On the upper surface of the work stage 2, the work W is held in a state of being sucked by a work chuck or the like. Further, a substrate side displacement sensor 15 for measuring the lower surface height of the mask M is disposed on the side portion of the work stage 2. Therefore, the substrate side displacement sensor 15 can move in the X and Y axis directions together with the work stage 2.
  • a plurality of (four in the embodiment shown in the figure) X-axis linear guide rails 51 are arranged in the X-axis direction, and each guide rail 51 has a lower surface of the X-axis feed base 5 a.
  • a slider 52 fixed to the bridge is straddled.
  • the X-axis feed base 5 a is driven by the first linear motor 20 of the X-axis stage feed mechanism 5 and can reciprocate along the guide rail 51 in the X-axis direction.
  • a plurality of guide rails 53 for Y-axis linear guides are arranged on the X-axis feed base 5a in the Y-axis direction.
  • Each guide rail 53 has a slider 54 fixed to the lower surface of the Y-axis feed base 6a. Is straddled. Accordingly, the Y-axis feed base 6 a is driven by the second linear motor 21 of the Y-axis stage feed mechanism 6 and can reciprocate in the Y-axis direction along the guide rail 53.
  • the vertical coarse motion device 7 having a relatively coarse positioning resolution but a large moving stroke and moving speed, and the vertical coarse motion Positioning with high resolution is possible compared with the apparatus 7, and a vertical fine movement apparatus 8 is provided for finely adjusting the gap between the opposing surfaces of the mask M and the work W to a predetermined amount by finely moving the work stage 2 up and down. .
  • the vertical coarse movement device 7 moves the work stage 2 up and down with respect to the fine movement stage 6b by an appropriate drive mechanism provided on the fine movement stage 6b described later.
  • the stage coarse movement shafts 14 fixed at four positions on the bottom surface of the work stage 2 are engaged with linear motion bearings 14a fixed to the fine movement stage 6b, and are guided in the vertical direction with respect to the fine movement stage 6b.
  • it is desirable that the vertical coarse motion device 7 has high repeated positioning accuracy even if the resolution is low.
  • the vertical fine movement device 8 includes a fixed base 9 fixed to the Y-axis feed base 6a, and a linear guide guide rail 10 attached to the fixed base 9 with its inner end inclined obliquely downward.
  • a ball screw nut (not shown) is coupled to a slide body 12 that reciprocates along the guide rail 10 via a slider 11 straddling the guide rail 10, and an upper end surface of the slide body 12. Is in contact with the flange 12a fixed to the fine movement stage 6b so as to be slidable in the horizontal direction.
  • the vertical fine movement device 8 may drive the slide body 12 by a linear motor instead of driving the slide body 12 by the motor 17 and the ball screw.
  • the vertical fine movement device 8 is installed on one end side (left end side in FIG. 1) in the Y-axis direction of the Z-axis feed base 6a and two on the other end side, for a total of three units, and each is independently driven and controlled. It has become so. Accordingly, the vertical fine movement device 8 independently finely adjusts the heights of the three flanges 12 a based on the measurement results of the gap amounts between the mask M and the workpiece W at a plurality of locations by the gap sensor 27, and the workpiece stage 2. Fine-tune the height and inclination of In addition, when the height of the work stage 2 can be sufficiently adjusted by the vertical fine movement device 8, the vertical coarse movement device 7 may be omitted.
  • a bar mirror (both not shown) facing the interferometer is installed.
  • the bar mirror 19 facing the Y-axis laser interferometer 18 is arranged along the X-axis direction on one side of the Y-axis feed base 6a, and the bar mirror facing the X-axis laser interferometer is located on the Y-axis feed base 6a. It is arranged along the Y-axis direction on one end side.
  • the Y-axis laser interferometer 18 and the X-axis laser interferometer are each arranged so as to always face the corresponding bar mirror and supported by the apparatus base 4.
  • Two Y-axis laser interferometers 18 are installed apart from each other in the X-axis direction.
  • the two Y-axis laser interferometers 18 detect the position of the Y-axis feed base 6a and consequently the work stage 2 in the Y-axis direction and the yawing error via the bar mirror 19.
  • the X-axis laser interferometer detects the position of the X-axis feed base 5a and eventually the work stage 2 in the X-axis direction via the opposing bar mirror.
  • the mask stage 1 is inserted in a X, Y, ⁇ direction (in the X, Y plane) by inserting a mask base frame 24 composed of a substantially rectangular frame body and a gap into a central opening of the mask base frame 24.
  • a mask frame 25 supported so as to be movable, and a plurality of mask drive units 28 provided so that the mask frame 25 can be moved in the X, Y, and ⁇ directions with respect to the mask base frame 24.
  • the mask base frame 24 is held at a fixed position above the work stage 2 by a column 4 a protruding from the apparatus base 4.
  • a frame-shaped mask holder 26 is provided on the lower surface of the central opening of the mask frame 25. That is, a plurality of mask holder suction grooves connected to a vacuum suction device (not shown) are provided on the lower surface of the mask frame 25, and the mask holder 26 is sucked to the mask frame 25 through the plurality of mask holder suction grooves. Retained.
  • a plurality of mask suction grooves are provided on the lower surface of the mask holder 26 for sucking the peripheral portion of the mask M on which the mask pattern is not drawn.
  • the mask M passes through the mask suction grooves. Then, it is detachably held on the lower surface of the mask holder 26 by a vacuum suction device (not shown).
  • the light irradiation device 3 of the exposure apparatus PE of this embodiment includes a lamp unit 60 as a light source, a flat mirror 63 for changing the direction of the optical path EL, and exposure control for controlling the opening and closing of the irradiation optical path.
  • An integrator 65 that is disposed downstream of the exposure shutter unit 64 and the exposure control shutter unit 64 and uniformly emits light from the lamp unit 60, and an optical path that is disposed downstream of the integrator 65 and emitted from the integrator 65
  • the light irradiation device 3 includes an ultraviolet cut filter 90 that cuts a first wavelength region that is exposure light (ultraviolet light) on the optical path EL of light from the lamp unit 60, and a second wavelength that is longer than the exposure light.
  • a long wavelength cut filter 95 that cuts the wavelength region is disposed so as to freely advance and retract.
  • the lamp unit 60 and the ultraviolet cut filter 90 constitute the non-exposure light illumination unit 100.
  • FIGS. 4A and 5A some components of the light irradiation device 3 shown in FIG. 2 are omitted for explanation.
  • the lamp unit 60 includes, for example, a plurality of high-pressure mercury lamps 61 and a plurality of reflectors 62 that collect light emitted from the high-pressure mercury lamp 61.
  • the structure of the single high pressure mercury lamp 61 and the reflector 62 may be sufficient, or it may be comprised by LED.
  • the light emitted from the lamp unit 60 includes light in the first wavelength region and light in the second wavelength region.
  • the light in the first wavelength region is exposure light composed of ultraviolet rays including a region near 365 nm where the photosensitive material applied to the workpiece W can be exposed.
  • the light in the second wavelength region is non-exposure light composed of visible light including a region near 550 nm that does not expose the photosensitive material. The non-exposure light is used for alignment adjustment between the mask M and the workpiece W, as will be described later.
  • the integrator 65 includes a plurality of lens elements (not shown) arranged in a matrix, and emits the light collected by the reflector 62 so as to have as uniform an illuminance distribution as possible in the irradiation region.
  • the plane mirror 63, the plane mirror 66, the collimation mirror 67, and the plane mirror 68 are reflection mirrors that can reflect (substantially total reflection) light of all wavelengths (light of the first and second wavelength regions).
  • a reflection mirror that can reflect (substantially total reflection) light of all wavelengths (light of the first and second wavelength regions).
  • an aluminum film is formed on the reflective surface. Note that “substantially total reflection” means that the reflectance is 90% or more.
  • a mirror bending mechanism 70 is disposed on the back surface side of the plane mirror 68.
  • the plane mirror 68 changes the shape of the plane mirror 68 based on the command from the mirror control unit 80 connected to each mirror bending mechanism 70 by the signal line 81, and locally changes the curvature of the reflection surface. By doing so, the declination angle of the plane mirror 68 can be corrected.
  • the ultraviolet cut filter 90 is disposed between the lamp unit 60 and the plane mirror 63, and cuts light having a wavelength of less than 480 nm, for example, including exposure light in the first wavelength region, as shown in FIG.
  • the light emitted from the unit 60 is non-exposure light having the second wavelength region.
  • the ultraviolet cut filter 90 generally cuts light having a wavelength of less than 480 nm so as to include wavelengths in the vicinity of i-line (365 nm), h-line (405 nm), and g-line (436 nm).
  • the long wavelength cut filter 95 is disposed between the lamp unit 60 and the plane mirror 63, cuts light having a wavelength of 480 nm or more including non-exposure light in the second wavelength region, and is emitted from the lamp unit 60.
  • the light is exposure light having a first wavelength region.
  • a polarizing filter and a band pass filter may be disposed between the integrator 65 and the exposure surface.
  • the exposure control shutter unit 64 when the exposure control shutter unit 64 is controlled to be opened during exposure in the light irradiation device 3, the light emitted from the high-pressure mercury lamp 61 is reflected by the plane mirror 63. The light enters the entrance surface of the integrator 65. The traveling direction of the light emitted from the exit surface of the integrator 65 is changed by the plane mirror 66, the collimation mirror 67, and the plane mirror 68. Further, this light is irradiated as light for pattern exposure substantially perpendicularly to the surface of the mask M held on the mask stage 1 and further on the workpiece W held on the work stage 2, and the pattern of the mask M is irradiated to the workpiece. Exposure transferred onto W.
  • a mask side alignment mark 101 and a work side alignment mark 103 are formed at predetermined positions of the mask M and the work W, respectively.
  • the mask side alignment mark 101 has a shape having four small circles 101b at the apexes of a square in a circle 101a
  • the workpiece side alignment mark 103 has a cross shape.
  • the mask-side alignment mark 101 and the workpiece-side alignment mark 103 are not limited to the illustrated shapes as long as the alignment of the alignment marks 101 and 103 can be confirmed.
  • the mask side alignment mark 101 and the workpiece side alignment mark 103 are provided corresponding to each other.
  • a plurality of mask-side alignment marks 101 are formed around a rectangular pattern in the rectangular mask M, and the workpiece W corresponds to the plurality of mask-side alignment marks 101 at each position where the pattern is transferred.
  • a plurality of workpiece side alignment marks 103 are formed.
  • an alignment camera 110 that is focused on the upper surface of the workpiece W is disposed below the workpiece W.
  • the work stage 2 needs to be configured such that the alignment camera 110 can visually recognize both the alignment marks 101 and 103, and is configured by a transparent glass stage, for example.
  • the alignment camera 110 includes a mask side alignment mark 101, strictly speaking, a projection image 102 of the mask side alignment mark 101 projected on the upper surface of the work W, and a work side alignment mark 103. Take images at the same time.
  • the control unit 40 controls various mechanisms of the exposure apparatus PE including the light irradiation device 3.
  • the image is captured by the alignment camera 110 during alignment.
  • the amount of deviation between the projected image 102 of the mask side alignment mark 101 and the workpiece side alignment mark 103 is acquired, the plurality of mask driving units 28 are driven, the mask M is moved, and the mirror control unit 80 is moved to the mirror bending mechanism.
  • a signal for driving 70 is transmitted.
  • the control unit 40 may also serve as control of the mirror control unit 80.
  • the control unit 40 may move the workpiece W by the X-axis stage feed mechanism 5 and the Y-axis stage feed mechanism 6 instead of moving the mask M by the mask drive unit 28 during alignment. That is, the moving mechanism for moving the mask M and the workpiece W relative to each other may be a plurality of mask driving units 28, or the X-axis stage feeding mechanism 5 and the Y-axis stage feeding mechanism 6.
  • the ultraviolet cut filter 90 is inserted on the optical path EL of the light from the lamp unit 60, and the long wavelength cut filter 95 is retracted from the optical path EL (step S0).
  • the light emitted from the lamp unit 60 is cut at a wavelength of less than 480 nm including the first wavelength region by the ultraviolet cut filter 90. Thereby, the light emitted from the lamp unit 60 becomes non-exposure light including a second wavelength region in which the photosensitive material applied to the workpiece W is not exposed.
  • step S1 in FIG. 7 When the exposure control shutter unit 64 is opened in a state where the non-exposure light is irradiated (step S1 in FIG. 7), the non-exposure light is irradiated onto the workpiece W through the mask M, and the projection image of the mask side alignment mark 101 is obtained. 102 is formed on the workpiece W.
  • the alignment camera 110 simultaneously captures the projection image 102 of the mask side alignment mark 101 and the workpiece side alignment mark 103, and determines the amount of deviation between the projection image 102 and the workpiece side alignment mark 103. Obtain (step S2).
  • the non-exposure light irradiated to the workpiece W is light emitted from the lamp unit 60 that also functions as exposure light described later, its optical axis is coaxial with the optical axis of the exposure light.
  • the mask M held by the mask stage 1 is moved to adjust the alignment of the mask M and the workpiece W. Furthermore, as shown in FIG. 5, the amount of misalignment remaining without being able to adjust the alignment only by the relative movement of the mask M and the workpiece W is transmitted from the mirror control unit 80 to each mirror bending mechanism 70 of the plane mirror 68. This is transmitted and driven, and the shape of the plane mirror 68 is locally changed to correct the declination angle of the plane mirror 68 (step S3).
  • the center O 1 of the projection image 102 of the mask side alignment mark 101 and the center O 3 of the workpiece side alignment mark 103 are aligned to adjust the alignment.
  • the center O 1 of the projection image 102 of the mask side alignment mark 101 is an intersection of square diagonal lines composed of four small circles 101b
  • the center O 3 of the workpiece side alignment mark 103 is It is a cross-shaped intersection.
  • the non-exposure light that acquires the amount of deviation between the projection image 102 of the mask side alignment mark 101 and the workpiece side alignment mark 103 does not expose the photosensitive material applied to the workpiece W, before the exposure of the workpiece W, and Alignment adjustment can be performed while checking the amount of deviation between the projected image 102 and the workpiece side alignment mark 103 for each shot, which was difficult with a conventional exposure apparatus. Furthermore, it is possible to adjust the alignment while grasping the movement of the projection image 102 of the mask side alignment mark 101 due to the change of the optical axis by each mirror bending mechanism 70 of the plane mirror 68 with the alignment camera 110.
  • the exposure control shutter unit 64 is moved. Once closed, the ultraviolet cut filter 90 is retracted from the optical path EL, and the long wavelength cut filter 95 is inserted into the optical path EL. Further, the alignment camera 110 is retracted from the optical path EL as necessary (step S6). Thereby, the light emitted from the lamp unit 60 becomes exposure light having the first wavelength region, and the workpiece W can be irradiated with the exposure light.
  • the exposure control shutter unit 64 is opened again, and the pattern formed on the mask M by exposure light is exposed and transferred to the workpiece W (step S7).
  • step S3 the bending correction of the plane mirror 63 is performed after the mask M is moved.
  • the movement of the mask M and the bending correction of the plane mirror 63 may be performed simultaneously.
  • the amount of deviation between the projection image 102 of the mask side alignment mark 101 and the workpiece side alignment mark 103 may be acquired again after the mask M is moved and before the plane mirror 63 is bent.
  • step S5 if the deviation amount exceeds the allowable range, the process returns to step S3, and in step S3, the plurality of alignment marks are comprehensively determined and the mask M is moved or the plane mirror 63 is moved. It may be selected whether to perform the bending correction.
  • the transmission wavelength is selected by alternately inserting and withdrawing the light emitted from the same lamp unit 60 on the optical path by the ultraviolet cut filter 90 and the long wavelength cut filter 95.
  • the optical axes of the exposure light and the non-exposure light are the same. Therefore, there is no misalignment between the optical axes at the time of alignment adjustment and at the time of exposure, and in the actual exposure, the positional deviation of the pattern due to the misalignment of the optical axis is prevented, and high accuracy is achieved. Exposure is possible.
  • non-exposure light having a second wavelength region, which is different from exposure light having a first wavelength region that the photosensitive material of the workpiece W is exposed to is coaxial with the optical axis of the light from the lamp unit 60.
  • the projection image 102 of the alignment mark 101 on the mask M projected onto the workpiece W and the alignment mark 103 on the workpiece W side can be simultaneously imaged using the non-exposure light illuminating means 100 that irradiates the workpiece W and the non-exposure light.
  • An alignment camera 110 Accordingly, the non-exposure light that is coaxial with the optical axis of the light from the lamp unit 60 serving as the exposure light is used to generate the mask M by the projection image 102 of the alignment mark 101 on the mask M side and the alignment mark 103 on the workpiece W side.
  • the relative movement of the mask M and the workpiece W and the local change of the curvature of the reflecting surface of the plane mirror 68 are realized without performing trial exposure while confirming the position of the workpiece W. be able to.
  • there is no misalignment between the optical axes during alignment adjustment and during exposure and in actual exposure, pattern misalignment due to the misalignment of the optical axis is prevented and exposure accuracy is greatly increased. To improve.
  • the non-exposure light illuminating means 100 is disposed on the optical path of the light from the lamp unit 60 so as to freely advance and retreat, and blocks the first wavelength region of the light from the lamp unit 60 so that the non-exposure light illuminating means 100 Is provided with an ultraviolet cut filter 90 that makes the light of the second wavelength region non-exposure light having the second wavelength region, so that the exposure light and the non-exposure light can be easily switched by simply moving the ultraviolet cut filter 90 forward and backward on the optical path EL. Can do.
  • the wavelength cut filter 95 is further provided, normal exposure can be performed by cutting light in the second wavelength region, and the lamp unit 60 can be shared while switching between non-exposure light and exposure light.
  • the proximity exposure method using the proximity exposure apparatus PE described above is projected onto the workpiece W while irradiating the non-exposure light by the non-exposure light illuminating means 100.
  • the step of simultaneously imaging the projection image 102 of the alignment mark 101 on the mask M side and the alignment mark 103 on the workpiece W side with the alignment camera 110, and the alignment of the projection image 102 of the alignment mark 101 on the mask M side with the workpiece W side A step of correcting the curvature of the plane mirror 68 by the mirror bending mechanism 70 so that the respective centers O1 and O3 of the mark 103 coincide with each other and moving the mask M and the workpiece W relative to each other.
  • the proximity exposure apparatus PE of the second embodiment will be described with reference to FIG. In FIG. 8, the plane mirror 66 and the collimation mirror 67 shown in FIG. 2 are simply shown as lenses.
  • the proximity exposure apparatus PE of the second embodiment is different from the proximity exposure apparatus PE of the first embodiment in the non-exposure light illumination means.
  • the other parts are the same as those of the proximity exposure apparatus PE according to the first embodiment of the present invention. Therefore, the same parts are denoted by the same or corresponding reference numerals, and description thereof will be simplified or omitted.
  • a ring-shaped LED illumination unit 121 is disposed at a position conjugate with the lamp unit 60 so as to surround the integrator 65. That is, the center of the LED illumination unit 121 is coincident with the center of the integrator 65, and the optical axis of the light emitted from the lamp unit 60 is coincident with the optical axis of the light emitted from the LED illumination unit 121. ing. Thereby, the pattern shift
  • the LED illumination unit 121 may be composed of an LED of a type that emits non-exposure light having the second wavelength region and does not emit exposure light having the first wavelength region.
  • An ultraviolet cut filter that cuts a wavelength of less than 480 nm may be disposed on the front surface to cut exposure light having the first wavelength region.
  • the light emitted from the LED illumination unit 121 does not expose the photosensitive material applied to the workpiece W, and the projected image 102 of the alignment mark 101 on the mask M side and the alignment mark 103 on the workpiece W side are aligned with the alignment camera 110.
  • the mask M is moved so that the centers O 1 and O 3 of the projection image 102 of the alignment mark 101 on the mask M side and the alignment mark 103 on the workpiece W side coincide with each other, and the mirror bending mechanism 70
  • the curvature of the plane mirror 68 is corrected to adjust the alignment.
  • the non-exposure light illuminating means 120 may be disposed at a position conjugate with the lamp unit 60 and is not limited to the periphery of the integrator 65.
  • a mirror 122 that can advance and retreat on the optical path EL is disposed on the optical path EL from the lamp unit 60 to the integrator 65, and the mirror 122 that has advanced on the optical path EL exits from the lamp unit 60.
  • the light emitted from the LED illumination unit 121 may be reflected and guided onto the optical path EL.
  • the non-exposure light illuminating means 120 may be any light source that can emit non-exposure light, and is not limited to the LED illumination unit 121.
  • the ultraviolet cut filter 90 that can freely move back and forth is not provided between the lamp unit 60 and the flat mirror 63 as in the first embodiment.
  • a film that cuts a wavelength of 480 nm or more including the second wavelength region may be formed on the plane mirror 63.
  • the non-exposure light illumination means 120 is provided separately from the lamp unit 60 and has the second wavelength region. Since the LED illumination unit 121 serving as a non-exposure light source that emits non-exposure light is provided, alignment adjustment can be performed without exposing the photosensitive material applied to the workpiece W.
  • the LED illumination unit 121 is disposed at a position conjugate with the lamp unit 60, highly accurate alignment adjustment can be realized, and the light emitted from the LED illumination unit 121 and the light emitted from the lamp unit 60 The pattern deviation at the time of exposure due to the deviation of the optical axis is prevented.
  • Other mechanisms and operations are the same as those of the proximity exposure apparatus PE of the first embodiment.
  • the proximity exposure apparatus PE of the third embodiment differs from that of the first embodiment in the arrangement of the alignment camera of the non-exposure light illumination means.
  • the other parts are the same as those of the proximity exposure apparatus PE according to the first embodiment of the present invention. Therefore, the same parts are denoted by the same or corresponding reference numerals, and description thereof will be simplified or omitted.
  • the half mirror 130 is disposed on the optical path EL between the plane mirror 68 and the mask M, and the alignment camera 110 is out of the optical path EL of light. It is arranged above the mask M and on the side of the optical path EL.
  • the alignment camera 110 simultaneously images the projection image 102 of the alignment mark 101 on the mask M side and the alignment mark 103 on the workpiece W side through the half mirror 130.
  • the half mirror disposed on the optical path of the non-exposure light between the plane mirror 68 and the mask M. 130, and the alignment camera 110 simultaneously images the projection image 102 of the alignment mark 101 on the mask M side and the alignment mark 103 on the workpiece W side via the half mirror 130, so that the configuration of the work stage 2 is achieved.
  • the alignment camera 110 can be used to achieve highly accurate alignment adjustment.
  • Other mechanisms and operations are the same as those of the proximity exposure apparatus PE of the first embodiment.
  • the proximity exposure apparatus PE of the fourth embodiment is different from that of the first embodiment in the configuration of the light irradiation apparatus 3 for proximity exposure apparatus.
  • the other parts are the same as those of the proximity exposure apparatus PE according to the first embodiment of the present invention. Therefore, the same parts are denoted by the same or corresponding reference numerals, and description thereof will be simplified or omitted.
  • the ultraviolet cut filter 90 functions as a shutter.
  • the ultraviolet cut filter 90 of the present embodiment retracts the light from the lamp unit 60 from the light path EL, thereby exposing the exposure light having the first wavelength region of the light from the lamp unit 60 through the mask M.
  • a shutter that blocks the exposure light is configured.
  • the present embodiment does not include the long wavelength cut filter 95 of the first embodiment, and on the other hand, advances and retreats on the optical path EL of the light from the lamp unit 60 between the lamp unit 60 and the ultraviolet cut filter 90.
  • a flexible pre-shutter 96 is provided. The pre-shutter 96 is configured to advance onto the optical path EL and block all light from the lamp unit 60 when an operator works in the chamber during maintenance or the like.
  • step S0a the alignment camera 110 is moved. By making it approach on optical path EL, it transfers to alignment operation of step S2, and step S1 of 1st Embodiment is not performed.
  • step S2 imaging by the alignment camera 110 (step S2), movement of the mask M and mirror correction (step S3), and confirmation of the shift amount including imaging (steps S4 and S5) are performed, and alignment is performed. Complete the adjustment.
  • step S6a when shifting to the exposure operation, in step S6a, the alignment camera 110 is first retracted from the optical path EL, and then the ultraviolet cut filter 90 is retracted in step S7a. The pattern formed on the mask M is exposed and transferred onto the workpiece W by light.
  • the non-exposure light of the present embodiment has the second wavelength region as in the first embodiment, but the exposure light of the present embodiment has both the first and second wavelength regions.
  • the ultraviolet cut filter 90 also serves as a shutter and does not include the long wavelength cut filter 95, the exposure method of the present embodiment can shorten the tact time.
  • Other mechanisms and operations are the same as those of the proximity exposure apparatus PE of the first embodiment.
  • the proximity exposure apparatus PE of the fifth embodiment is different from that of the first embodiment in the configuration and alignment adjustment of the light irradiation apparatus 3 for proximity exposure apparatus.
  • the other parts are the same as those of the proximity exposure apparatus PE according to the first embodiment of the present invention. Therefore, the same parts are denoted by the same or corresponding reference numerals, and description thereof will be simplified or omitted.
  • 13 shows the outer shape of the workpiece W and the workpiece-side alignment mark 103, the workpiece W includes a rectangular exposure region (not shown) corresponding to the exposure pattern of the mask M. It is considered that the outer shape is substantially similar to the rectangular exposure region.
  • the mask side alignment mark 101 and the workpiece side alignment mark 103 are not only the four corners A1 to A4 around the rectangular exposure areas of the mask M and the workpiece W, but also the four corners A1 to A4. It is provided at an intermediate position of each side connecting A4 or in the vicinity thereof B1 to B4 and C1 to C4.
  • the control unit 40 confirms the shift amount at both the four corners A1 to A4 and the vicinity of the midpoint positions B1 to B4 and C1 to C4 of each side, the movement of the mask M in the mask driving unit 28, the mirror Both the curvature correction of the plane mirror 68 by the bending mechanism 70 is performed.
  • the eight camera units 140 each having the alignment camera 110 and the half mirror 130 described in the third embodiment are respectively moved in the longitudinal direction or the short direction of the workpiece W by a driving mechanism (not shown). It is attached to each rail 141 so that it can move and can move back and forth in the exposure area.
  • the eight camera units 140 are respectively moved, and the mask side alignment is performed at a total of 12 positions, ie, the four corners A1 to A4 of the workpiece W, and the vicinity of the middle points B1 to B4 and C1 to C4 of each side.
  • the projected image 102 of the mark 101 and the workpiece side alignment mark 103 are imaged.
  • the number of camera units 140 may be set to correspond to the number of imaging locations.
  • the projected image 102 of the mask side alignment mark 101 and the work side alignment mark 103 may be imaged at one midpoint of each side of the work W.
  • the control unit 40 moves the mask M based on the deviation amount between the projection image 102 of the mask side alignment mark 101 and the workpiece side alignment mark 103 at the four corners A1 to A4 of the work W, and performs alignment adjustment.
  • the plane mirror 63 is based on the shift amount between the projection image 102 of the mask side alignment mark 101 and the workpiece side alignment mark 103 in the vicinity of the middle points B1 to B4 and C1 to C4 Bending correction is performed.
  • the alignment camera 110 also measures the deviation amounts in the vicinity of the midpoints B1 to B4 and C1 to C4, and performs the bending correction of the plane mirror 63 based on the measured deviation amounts, thereby achieving higher accuracy. Exposure is possible.
  • the tact time is increased because the alignment camera 110 performs imaging in the vicinity of the midpoints B1 to B4 and C1 to C4 of each side of the workpiece W while moving the camera unit 140. Is concerned.
  • the mask-side alignment mark 101 and the workpiece-side alignment mark 103 are imaged at a total of twelve locations, two in the vicinity of the middle point B1 to B4 and C1 to C4. Based on the above, the average shape of the workpiece W is obtained.
  • the alignment camera 110 does not take an image in the vicinity of the midpoint of the work W, and takes an image at the four corners A1 to A4 of the work W. Alignment adjustment is performed based on the deviation amounts of the four corners A1 to A4 of W and the average shape of the workpiece W.
  • the control unit 40 determines the mask M based on the shift amount between the projection image 102 of the mask side alignment mark 101 and the work side alignment mark 103 at the four corners A1 to A4 of the work W. To adjust the x, y, and ⁇ directions. Further, based on the shift amounts at the four corners A1 to A4, the mirror bending mechanism is arranged so that the projection image 102 of the mask side alignment mark 101 and the centers of the workpiece side alignment marks 103 at the four corners A1 to A4 coincide with each other. 70, and the magnitude and direction of the bending correction of the plane mirror 63 by the mirror bending mechanism 70 at the four corners A1 to A4 are applied to other positions of the average shape of the workpiece W.
  • bending correction of the plane mirror 63 is performed.
  • the magnitude of the bending correction of the flat mirror 63 at the four corners A1 to A4 is different. For this reason, in the correction at the midpoint, after the shift amounts of the four corners A1 to A4 on both sides of the midpoint are divided into the x-direction component and the y-direction component, the average value of two points is used for each component. Further, as a correction amount at the midpoint, a coefficient may be further applied to the average value of these two points.
  • the alignment of the remaining workpieces W can be corrected based on the average shape obtained by imaging a predetermined number of workpieces W including the distortion shape at the midpoint, and therefore the influence of the tact time High-precision exposure is possible while suppressing
  • Other mechanisms and operations are the same as those of the proximity exposure apparatus PE of the first embodiment.
  • the alignment camera 110 images the mask side alignment mark 101 and the workpiece side alignment mark 103 during alignment adjustment.
  • the alignment camera 110 captures the workpiece side alignment mark.
  • a pixel (pixel alignment) exposed and transferred to the workpiece W in advance may be imaged. That is, pixel alignment constitutes the four corners of the exposure area.
  • Light irradiation equipment (light irradiation equipment for proximity exposure equipment) 60 Lamp unit (light source) 63, 66 Plane mirror (reflector) 65 Integrator 67 Collimation Mirror (Reflector) 68 Flat mirror 70 Mirror bending mechanism 90 UV cut filter (cut filter) 95 Long wavelength cut filter (other cut filters) 100, 120 Non-exposure light illuminating means 101 Mask side alignment mark 102 Projection image of mask side alignment mark 103 Work side alignment mark 110 Alignment camera 121 LED illumination unit (non-exposure light source) 130 Half mirror M Mask O 1 Center of projection image of alignment mark on mask 1 O 3 Center of alignment mark on work side PE Proximity exposure apparatus W Work

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
PCT/JP2019/002128 2018-02-08 2019-01-23 近接露光装置、近接露光方法、及び近接露光装置用光照射装置 WO2019155886A1 (ja)

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JP2019570664A JPWO2019155886A1 (ja) 2018-02-08 2019-01-23 近接露光装置、近接露光方法、及び近接露光装置用光照射装置
CN201980012676.3A CN111699440A (zh) 2018-02-08 2019-01-23 接近式曝光装置、接近式曝光方法以及接近式曝光装置用光照射装置
KR1020207020122A KR20200119235A (ko) 2018-02-08 2019-01-23 근접 노광 장치, 근접 노광 방법, 및 근접 노광 장치용 광조사 장치

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