WO2019100502A1 - 一种薄膜晶体管液晶显示器阵列基板及其制作方法 - Google Patents

一种薄膜晶体管液晶显示器阵列基板及其制作方法 Download PDF

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WO2019100502A1
WO2019100502A1 PCT/CN2017/117734 CN2017117734W WO2019100502A1 WO 2019100502 A1 WO2019100502 A1 WO 2019100502A1 CN 2017117734 W CN2017117734 W CN 2017117734W WO 2019100502 A1 WO2019100502 A1 WO 2019100502A1
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layer
thin film
lines
data lines
film transistor
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French (fr)
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徐向阳
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/739,271 priority Critical patent/US10914998B2/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G09G3/3659—Control of matrices with row and column drivers using an active matrix the addressing of the pixel involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependant on signal of two data electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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Definitions

  • the invention relates to a thin film transistor liquid crystal display array substrate and a manufacturing method thereof, and belongs to the technical field of liquid crystal display.
  • the liquid crystal panel completes the curved surface, since the shift (relative displacement) existing between the black matrix 2 and the data line 1 causes the aperture ratio to be lower, if the relative displacement is too large, not only the periphery of the pixel is leaked but also lowered.
  • the contrast of the liquid crystal panel therefore, in order to improve the influence of the relative displacement between the substrate 3 and the lower substrate 4 on the curved liquid crystal display on the display effect, as shown in FIG. 2, the designer usually removes the upper substrate 3 side from the data line 1 A black matrix on the front projection side (for shading) is formed, and a light-shielding electrode line 5 is formed at a position directly above the data line 1 on the side of the lower substrate 4.
  • the light-shielding electrode line 5 on the lower substrate 4 side and the common electrode 6 on the upper substrate 3 side maintain a small pressure difference and are shielded by the liquid crystal layer 7.
  • This technique is called Data BM less (DBS) technology, which enables liquid crystal molecules. Keep the state of no deflection, thus playing the purpose of shading.
  • DBS Data BM less
  • the liquid crystal panel array substrate is electrically connected by a light-shielding electrode line 5 (1D2G structure, as shown in FIG. 3).
  • the impedance of the light-shielding electrode line 5 is large, the voltage driving uniformity of the light-shielding electrode line 5 is relatively poor.
  • an object of the present invention is to provide a thin film transistor liquid crystal display array substrate capable of realizing voltage driving uniformity of a light-shielding electrode line and a method of fabricating the same.
  • a thin film transistor liquid crystal display array substrate including a substrate, on which a plurality of data lines, a plurality of dummy data lines, a plurality of first gate lines, and a plurality of second gate lines, a plurality of the data lines and a plurality of the dummy data lines are alternately arranged in a longitudinal direction, and the plurality of the first gate lines and the plurality of the second gate lines are alternately laterally Arranging a plurality of sets of pixel units between each of the plurality of data lines, the plurality of dummy data lines, the plurality of the first gate lines, and the plurality of second gate lines, each group
  • the pixel units each include an odd-numbered first thin film transistor and an even-numbered second thin film transistor, and the sources of each of the two adjacent first thin film transistors and the second thin film transistor are commonly connected to the data.
  • each of the two adjacent first thin film transistors and the second thin film transistor are respectively connected to the first gate line and the second gate line, and each of the a thin film transistor and the second thin film transistor
  • a pixel electrode connected to the drain electrode both ends of each of the dummy data lines are connected to a common voltage line through the electrodes, the voltage of the common electrode line disposed transversely on the substrate.
  • a light shielding electrode line is disposed above each of the data lines, and a plurality of the light shielding electrode lines are arranged at an alternating interval between the plurality of pixel electrodes.
  • Both ends of each of the dummy data lines are connected to the common voltage electrode line through via holes.
  • Each of the first thin film transistors includes a plurality of spaced apart first thin film transistors
  • each of the second thin film transistors includes a plurality of spaced apart second thin film transistors.
  • a method for fabricating a thin film transistor liquid crystal display array substrate comprising the steps of: 1) depositing a first metal layer on a substrate, and forming a plurality of first gate lines and a plurality of second gates by a photolithography process; a line and two common voltage electrode lines; 2) depositing a gate insulating layer on the surface of the first metal layer, and depositing a semiconductor active layer on the surface of the gate insulating layer, and then forming an ohmic contact layer on the surface of the semiconductor active layer; 3) a second metal layer is deposited on the surface of the silicon island structure, a source, a drain and a plurality of data lines are formed by a photolithography process; 4) a first insulating protective layer is deposited on the surface of the second metal layer; 5) is fabricated by a yellow light process a red color group, a green color group, and a blue color group; 6) a second insulating protective layer is deposited on the outside of the semiconductor active layer, the source and the drain, and
  • a first metal layer is formed on the substrate by physical vapor deposition, the first metal layer is made of aluminum, molybdenum, copper or an alloy, and the first metal layer has a thickness of 3000 to 6000 angstroms;
  • a plurality of first gate lines, a plurality of second gate lines, and two common voltage electrode lines are sequentially formed by exposure, development, wet etching, and lift-off through a mask.
  • a gate insulating layer is formed on the surface of the first metal layer by plasma enhanced chemical vapor deposition, and the gate insulating layer is a silicon nitride film or a silicon oxide film, and the gate insulating layer has a thickness of 2000 to 5000 angstroms.
  • the silicon island structure is formed by sequentially exposing, developing, dry etching and peeling through the mask on the ohmic contact layer; the semiconductor active layer is an amorphous silicon layer, and the thickness of the semiconductor active layer is 1500 to 3000 angstroms.
  • the second metal layer is made of aluminum, molybdenum, copper or alloy, and the second metal layer has a thickness of 3000 to 6000 angstroms, and is sequentially exposed on the second metal layer by a gray tone mask. , development, primary metal etching, dry etching, two etchings, two dry etching, and stripping to form a source, a drain, and a plurality of data lines.
  • a first insulating protective layer is formed on the surface of the second metal layer by plasma enhanced chemical vapor deposition, and the first insulating protective layer is a silicon nitride film or a silicon oxide film, and the first insulating protective layer
  • the thickness is 500 to 2000 angstroms.
  • a second insulating protective layer is formed by plasma enhanced chemical vapor deposition on the outside of the semiconductor active layer, the source and the drain, and the second insulating protective layer is a silicon nitride film or a silicon oxide film.
  • the second insulating protective layer has a thickness of 500 to 2000 angstroms, and is sequentially exposed, developed, dried, and peeled through the mask on the second insulating protective layer to form via holes; in the step 7), in the second insulating layer
  • the surface of the protective layer is formed by physical vapor deposition to form a transparent conductive layer having a thickness of 400 to 1000 angstroms.
  • the transparent conductive layer is sequentially exposed, developed, etched and peeled off through a mask to form a plurality of pixel electrodes and a plurality of strips. Dummy electrode line.
  • the present invention has the following advantages: the present invention provides a plurality of dummy data lines, which are respectively connected through a common voltage electrode line at both ends of each dummy data line, thereby reducing the impedance of each light-shielding electrode line, thereby The voltage driving uniformity of the shading electrode line can be achieved.
  • FIG. 1 is a schematic structural view of a prior art black matrix light shielding layer
  • FIG. 2 is a schematic structural view showing a shading electrode line disposed after removing a black matrix light shielding layer in the prior art
  • FIG. 3 is a schematic structural view of a prior art liquid crystal panel array substrate
  • FIG. 5 is a schematic structural view of a pixel electrode and a shading electrode line of the present invention.
  • FIG. 6 is a schematic structural view of a gate line of the present invention.
  • Fig. 7 is a structural schematic view showing the source and drain of the data line and the thin film transistor of the present invention.
  • the thin film transistor liquid crystal display array substrate provided by the present invention comprises a plurality of data lines 1, a plurality of dummy data lines 8, a plurality of first gate lines 9, and a plurality of second gates disposed on the substrate.
  • Polar line 10 The plurality of data lines 1 and the plurality of dummy data lines 8 are alternately arranged in the longitudinal direction, and the plurality of first gate lines 9 and the plurality of second gate lines 10 are arranged alternately in the lateral direction.
  • a plurality of sets of pixel units are arranged between the plurality of data lines 1, the plurality of dummy data lines 8, the plurality of first gate lines 9, and the plurality of second gate lines 10.
  • Each group of pixel units includes an odd column of the first thin film transistor 11 and an even column of the second thin film transistor 12.
  • the sources of each of the two adjacent first thin film transistors 11 and the second thin film transistors 12 are commonly connected to the data line 1, and the data signals can be input to the first thin film transistor 10 and the second thin film transistor 11 to drive the corresponding The pixel unit, thus allowing the pixel to be displayed.
  • the gates of each of the two adjacent first thin film transistors 11 and second thin film transistors 12 are connected to the first gate line 9 and the second gate line 10, respectively.
  • Each of the drains of the first thin film transistor 11 and the second thin film transistor 12 is connected to a pixel electrode 13 (as shown in FIGS. 1 to 3), and two adjacent first and second gate lines 9 and 2 can be realized.
  • the epipolar line 10 controls the pixels of the next row and the pixels of the previous row, respectively. Both ends of each dummy data line 8 are respectively connected by a common voltage electrode line 14, and the common voltage electrode line 14 is laterally disposed on the substrate.
  • the impedance of the shading electrode line 5 (shown in FIG. 2) can be lowered, thereby improving the voltage driving stability of the shading electrode line 5.
  • a light-shielding electrode line 5 is disposed above each of the data lines 1, and a plurality of light-shielding electrode lines 5 and a plurality of pixel electrodes 13 are arranged at an alternating interval.
  • both ends of each dummy data line 8 are connected to the common voltage electrode line 14 through via holes 15 respectively.
  • the common voltage electrode line 14 is a metal trace.
  • each of the odd-numbered columns of the first thin film transistors 11 includes a plurality of first thin film transistors 11 arranged at intervals
  • each of the even-numbered columns of second thin film transistors 12 includes a plurality of second thin film transistors 12 arranged at intervals.
  • the method for fabricating a thin film transistor liquid crystal display array substrate comprises the following steps:
  • a first metal layer is formed by physical vapor deposition (PVD) on the substrate.
  • the first metal layer is made of aluminum, molybdenum, copper or alloy.
  • the first metal layer has a thickness of 3000 to 6000 angstroms.
  • a plurality of first gate lines 9, a plurality of second gate lines 10, and two common voltage electrode lines 14 are formed by sequentially performing exposure, development, wet etching, and lift-off on the first metal layer through a mask.
  • a gate insulating layer on the surface of the first metal layer, and depositing a semiconductor active layer on the surface of the gate insulating layer, in order to reduce the contact resistance between the first metal layer and the gate insulating layer, and then correspondingly on the surface of the semiconductor active layer
  • the portion is formed by ion implantation to form an n+ type layer (ohmic contact layer), and a silicon island structure is formed by a photolithography process.
  • a gate insulating layer is formed by plasma enhanced chemical vapor deposition (PECVD) on the surface of the first metal layer.
  • the gate insulating layer is a silicon nitride film (SiN x ) or a silicon oxide film (SiO x ), and the gate insulating layer has a thickness of 2000 to 5000 angstroms.
  • a silicon island structure is formed by sequentially performing exposure, development, dry etching, and lift-off on the ohmic contact layer through a mask.
  • the semiconductor active layer is an amorphous silicon (a-Si) layer, and the semiconductor active layer has a thickness of 1,500 to 3,000 angstroms.
  • the second metal layer is made of aluminum, molybdenum, copper or an alloy or the like.
  • the second metal layer has a thickness of 3000 to 6000 angstroms.
  • the source, the drain, and the plurality of data lines 1 are formed by sequentially performing exposure, development, primary metal etching, dry etching, twice etching, twice dry etching, and peeling through a gray tone mask.
  • a first insulating protective layer is formed on the surface of the second metal layer by plasma enhanced chemical vapor deposition.
  • the first insulating protective layer is a silicon nitride film (SiN x ) or a silicon oxide film (SiO x ).
  • the first insulating protective layer has a thickness of 500 to 2000 angstroms.
  • the red color group (R), the green color group (G), and the blue color group (B) are produced by the yellow light process.
  • step 5 the substrate is first cleaned, and a layer of photoresist is uniformly coated on the surface of the conductive layer of the substrate, and then baked at a certain temperature for a period of time to volatilize the solvent of the photoresist to form a solid PR layer, and then used.
  • the ultraviolet light is vertically irradiated onto the surface of the photoresist through a preset film, the photoresist of the irradiated portion is reacted, and the photoresist of the portion irradiated with the light is removed by using a weak KOH (potassium hydroxide) solution to remove the photoresist.
  • the unexposed part of the photoresist is subjected to high temperature treatment, and the photoresist-free conductive layer is removed with an appropriate acid solution to obtain an indium tin oxide electrode pattern, and finally a residual potassium hydroxide stripping solution is used for residual photolithography.
  • a red color group, a green color group, and a blue color group are formed on the surface of the substrate.
  • a second insulating protective layer is deposited on the outside of the semiconductor active layer, the source and the drain, and a via 15 is formed by a photolithography process (as shown in FIG. 4).
  • a second insulating protective layer is formed by plasma enhanced chemical vapor deposition on the outside of the semiconductor active layer, the source and the drain.
  • the second insulating protective layer is a silicon nitride film (SiN x ) or a silicon oxide film (SiO x ), and the second insulating protective layer has a thickness of 500 to 2000 angstroms.
  • the via holes 15 are formed by sequentially performing exposure, development, dry etching, and lift-off on the second insulating protective layer through a mask.
  • a transparent conductive layer is formed by physical vapor deposition on the surface of the second insulating protective layer.
  • the transparent conductive layer has a thickness of 400 to 1000 angstroms.
  • a plurality of pixel electrodes 13 and a plurality of dummy data lines 8 are formed by sequentially performing exposure, development, etching, and lift-off on the transparent conductive layer through a mask.

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Abstract

一种薄膜晶体管液晶显示器阵列基板及其制作方法，阵列基板包括多条数据线（1）、多条虚设数据线（8）、多条第一栅极线（9）和多条第二栅极线（10），多条数据线（1）和多条虚设数据线（8）呈纵向交替间隔布置，多条第一栅极线（9）和多条第二栅极线（10）呈横向交替间隔布置，在多条数据线（1）、多条虚设数据线（8）、多条第一栅极线（9）和多条第二栅极线（10）之间围设有多组像素单元，每组像素单元均包括一奇数列第一薄膜晶体管（11）和一偶数列第二薄膜晶体管（12）；各虚设数据线（8）的两端分别通过一共同电压电极线（14）连接，共同电压电极线（14）横向设置在基板上。制作方法包括形成多条栅极线（9,10）和两条共同公共电极线（14），形成源极、漏极和多条数据线（1），形成多个像素电极（13）和多条虚设数据线（8）。

Description

一种薄膜晶体管液晶显示器阵列基板及其制作方法
相关申请的交叉引用
本申请要求享有于2017年11月23日提交的名称为“一种薄膜晶体管液晶显示器阵列基板及其制作方法”的中国专利申请CN201711188692.7的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本发明涉及一种薄膜晶体管液晶显示器阵列基板及其制作方法，属于液晶显示技术领域。
背景技术
随着液晶显示技术的发展，目前3D(三维空间)和曲面已经在大尺寸显示方面得到了广泛应用，同时随着4K(3840×2160像素分辨率)和8K(7680×4320像素分辨率)等高解析度的发展，像素尺寸需要越来越小。像素尺寸越小时，液晶面板开口率也会越低，同时，数据线1的线宽和黑色矩阵(BM)2遮光层也会越来越细(如图1所示)。然而，当液晶面板完成曲面时，由于黑色矩阵2和数据线1之间存在的shift(相对位移)会使得开口率更低，如果相对位移过大，则不仅会使像素周边漏光，而且会降低液晶面板的对比度，因此，为了改善曲面液晶显示屏上基板3、下基板4之间的相对位移对显示效果的影响，如图2所示，设计人员通常会去除上基板3侧位于数据线1正投影侧的黑色矩阵(用于遮光)，并在下基板4侧位于数据线1正上方的位置制作遮光电极线5。下基板4侧的遮光电极线5与上基板3侧的公共电极6保持一个较小的压差，并利用液晶层7进行遮光，这种技术叫做Data BM less(DBS)技术，能够使液晶分子保持不偏转的状态，从而起到遮光的目的。在传统的DBS技术中，液晶面板阵列基板均采用遮光电极线5网状结构导通(1D2G结构，如图3所示)。但是，由于遮光电极线5的阻抗大，因此导致遮光电极线5的电压驱动均匀性相对较差。
发明内容
针对上述问题，本发明的目的是提供一种能够实现遮光电极线的电压驱动均匀性好的薄膜晶体管液晶显示器阵列基板及其制作方法。
为实现上述目的，本发明采取以下技术方案：一种薄膜晶体管液晶显示器阵列基板，包括基板，在所述基板上设置有多条数据线、多条虚设数据线、多条第一栅极线和多条第二栅极线，多条所述数据线和多条所述虚设数据线呈纵向交替间隔布置，多条所述第一栅极线和多条所述第二栅极线呈横向交替间隔布置，在多条所述数据线、多条所述虚设数据线、多条所述第一栅极线和多条所述第二栅极线之间围设有多组像素单元，每组所述像素单元均包括一奇数列第一薄膜晶体管和一偶数列第二薄膜晶体管，每组两相邻的所述第一薄膜晶体管和所述第二薄膜晶体管的源极共同连接在所述数据线上，每组相邻的两所述第一薄膜晶体管和所述第二薄膜晶体管的栅极均分别连接在所述第一栅极线和所述第二栅极线上，各所述第一薄膜晶体管和所述第二薄膜晶体管的漏极均连接一像素电极，各所述虚设数据线的两端分别通过一共同电压电极线连接，所述共同电压电极线横向设置在所述基板上。
在每一所述数据线的上方均设置有一遮光电极线，多个所述遮光电极线与多个所述像素电极之间呈交替间隔布置。
各所述虚设数据线的两端分别通过过孔共同连接在共同电压电极线上。
每列所述第一薄膜晶体管均包括多个间隔布置的所述第一薄膜晶体管，每列所述第二薄膜晶体管均包括多个间隔布置的所述第二薄膜晶体管。
一种薄膜晶体管液晶显示器阵列基板的制作方法，其特征在于，包括以下步骤：1)在基板上沉积第一金属层，通过光刻工艺形成多条第一栅极线、多条第二栅极线和两条共同电压电极线；2)在第一金属层的表面沉积栅绝缘层，并在栅绝缘层的表面沉积半导体活性层，接着在半导体活性层的表面形成欧姆接触层；3)在硅岛结构的表面沉积第二金属层，通过光刻工艺形成源极、漏极和多条数据线；4)在第二金属层的表面沉积第一绝缘保护层；5)利用黄光工艺制作红色色组、绿色色组和蓝色色组；6)在半导体活性层、源极和漏极的外部沉积第二层绝缘保护层，通过光刻工艺形成过孔；7)在第二绝缘保护层的表面沉积透明导电层，通过光刻工艺形成多个像素电极和多条虚设数据线，且将各虚设数据线的两端分别通过过孔连接在两条共同电压电极线上。
在所述步骤1)中，在基板上通过物理气相沉积形成第一金属层，第一金属 层采用铝、钼、铜或合金制成，第一金属层的厚度为3000～6000埃米；在第一金属层上通过掩模板依次进行曝光、显影、湿刻和剥离形成多条第一栅极线、多条第二栅极线和两条共同电压电极线。
在所述步骤2)中，在第一金属层的表面通过等离子体增强化学气相沉积形成栅绝缘层，栅绝缘层为氮化硅膜或氧化硅膜，栅绝缘层的厚度为2000～5000埃米；在欧姆接触层上通过掩模板依次进行曝光、显影、干刻和剥离形成硅岛结构；半导体活性层为非晶硅层，半导体活性层的厚度为1500～3000埃米。
在所述步骤3)中，第二金属层采用铝、钼、铜或合金制成，第二金属层的厚度为3000～6000埃米，在第二金属层上通过灰色调掩模板依次进行曝光、显影、一次金属蚀刻、一次干刻、两次蚀刻、两次干刻和剥离形成源极、漏极和多条数据线。
在所述步骤4)中，在第二金属层的表面通过等离子体增强化学气相沉积形成第一绝缘保护层，第一绝缘保护层为氮化硅膜或氧化硅膜，第一绝缘保护层的厚度为500～2000埃米。
在所述步骤6)中，在半导体活性层、源极和漏极的外部通过等离子体增强化学气相沉积形成第二层绝缘保护层，第二绝缘保护层为氮化硅膜或氧化硅膜，第二绝缘保护层的厚度为500～2000埃米，在第二绝缘保护层上通过掩模板依次进行曝光、显影、干刻和剥离形成过孔；在所述步骤7)中，在第二绝缘保护层的表面通过物理气相沉积形成透明导电层，透明导电层的厚度为400～1000埃米，在透明导电层上通过掩模板依次进行曝光、显影、蚀刻和剥离形成多个像素电极和多条虚设电极线。
本发明由于采取以上技术方案，其具有以下优点：本发明设置了多条虚设数据线，在各虚设数据线的两端分别通过一共同电压电极线连接，能够降低各遮光电极线的阻抗，从而能够实现遮光电极线的电压驱动均匀性好。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分的从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。
图1是已有技术设置黑色矩阵遮光层的结构示意图；
图2是已有技术去除黑色矩阵遮光层后设置遮光电极线的结构示意图；
图3是已有技术液晶面板阵列基板的结构示意图；
图4是本发明阵列基板的结构示意图；
图5是本发明像素电极和遮光电极线的结构示意图；
图6是本发明栅极线的结构示意图；
图7是本发明数据线和薄膜晶体管源极、漏极的结构示意图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。本发明所提到的方向用语例如「上」、「下」等，仅是参考附加图式的方式。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
如图4所示，本发明提出的薄膜晶体管液晶显示器阵列基板，包括设置在基板上的多条数据线1、多条虚设数据线8、多条第一栅极线9和多条第二栅极线10。其中，多条数据线1和多条虚设数据线8呈纵向交替间隔布置，多条第一栅极线9和多条第二栅极线10呈横向交替间隔布置。在多条数据线1、多条虚设数据线8、多条第一栅极线9和多条第二栅极线10之间围设有多组像素单元。每组像素单元均包括一奇数列第一薄膜晶体管11和一偶数列第二薄膜晶体管12。每组两相邻的第一薄膜晶体管11和第二薄膜晶体管12的源极共同连接在数据线1上，能够将数据信号输入至第一薄膜晶体管10和第二薄膜晶体管11上，以驱动相应的像素单元，从而使像素显示。每组相邻的两第一薄膜晶体管11和第二薄膜晶体管12的栅极均分别连接在第一栅极线9和第二栅极线10上。各第一薄膜晶体管11和第二薄膜晶体管12的漏极均连接一像素电极13(如图1～3所示)，能够实现两条相邻平行延伸的第一栅极线9和第二栅极线10分别控制下一行的像素与上一行的像素。各虚设数据线8的两端分别通过一共同电压电极线14连接，共同电压电极线14横向设置在基板上。能够降低遮光电极线5(如图2所示)的阻抗，从而提高遮光电极线5的电压驱动稳定性。
上述实施例中，如图2所示，在每一数据线1的上方均设置有一遮光电极线5，多个遮光电极线5与多个像素电极13之间呈交替间隔布置。
上述实施例中，各虚设数据线8的两端分别通过过孔15共同连接在共同电压电极线14上。
上述实施例中，共同电压电极线14为金属走线。
上述实施例中，每一奇数列第一薄膜晶体管11均包括多个间隔布置的第一薄膜晶体管11，每一偶数列第二薄膜晶体管12均包括多个间隔布置的第二薄膜晶体管12，能够减少数据线的数量，从而减少电极接点的数量，降低加工时间，并提高液晶显示器的画面质量。
如图5～7所示，本发明提出的薄膜晶体管液晶显示器阵列基板的制作方法，包括以下步骤：
1)在基板上沉积第一金属层，通过光刻工艺形成多条第一栅极线9、多条第二栅极线10和两条共同电压电极线14(如图4所示)。
在步骤1)中，在基板上通过物理气相沉积(PVD)形成第一金属层。其中，第一金属层采用铝、钼、铜或合金等制成。第一金属层的厚度为3000～6000埃米。在第一金属层上通过掩模板依次进行曝光、显影、湿刻和剥离形成多条第一栅极线9、多条第二栅极线10和两条共同电压电极线14。
2)在第一金属层的表面沉积栅绝缘层，并在栅绝缘层的表面沉积半导体活性层，为降低第一金属层与栅绝缘层之间的接触电阻，接着在半导体活性层的表面相应部位由离子注入形成n+型层(欧姆接触层)，通过光刻工艺形成硅岛结构。
在步骤2)中，在第一金属层的表面通过等离子体增强化学气相沉积(PECVD)形成栅绝缘层。其中，栅绝缘层为氮化硅膜(SiN x)或氧化硅膜(SiO x)，栅绝缘层的厚度为2000～5000埃米。在欧姆接触层上通过掩模板依次进行曝光、显影、干刻和剥离形成硅岛结构。半导体活性层为非晶硅(a-Si)层，半导体活性层的厚度为1500～3000埃米。
3)在硅岛结构的表面沉积第二金属层，通过光刻工艺形成源极、漏极和多条数据线1。
在步骤3)中，第二金属层采用铝、钼、铜或合金等制成。第二金属层的厚度为3000～6000埃米。在第二金属层上通过灰色调掩模板依次进行曝光、显影、一次金属蚀刻、一次干刻、两次蚀刻、两次干刻和剥离形成源极、漏极和多条数 据线1。
4)在第二金属层的表面沉积第一绝缘保护层。
在步骤4)中，在第二金属层的表面通过等离子体增强化学气相沉积形成第一绝缘保护层。其中，第一绝缘保护层为氮化硅膜(SiN x)或氧化硅膜(SiO x)。第一绝缘保护层的厚度为500～2000埃米。
5)利用黄光工艺制作红色色组(R)、绿色色组(G)和蓝色色组(B)。
在步骤5)中，首先清洗基板，并在基板导电层表面均匀涂布一层光刻胶，接着在一定温度下烘一段时间、使光刻胶的溶剂挥发，形成固体的PR层，然后用紫外线通过预先设置好的菲林垂直照射光刻胶表面，使被照射部分的光刻胶发生反应，并用弱KOH(氢氧化钾)溶液去离基板表面将径光照射部分的光刻胶除去，保留未照射部分的光刻胶，经高温处理后用适当的酸液将无光刻胶覆盖的导电层除去，得到氧化铟锡电极图形，最后用较强的氢氧化钾剥膜液将残留光刻胶除去，清洗干燥后，在基板的表面形成红色色组、绿色色组和蓝色色组。
6)为保护半导体活性层、源极和漏极，在半导体活性层、源极和漏极的外部沉积第二层绝缘保护层，通过光刻工艺形成过孔15(如图4所示)。
在步骤6)中，在半导体活性层、源极和漏极的外部通过等离子体增强化学气相沉积形成第二层绝缘保护层。其中，第二绝缘保护层为氮化硅膜(SiN x)或氧化硅膜(SiO x)，第二绝缘保护层的厚度为500～2000埃米。在第二绝缘保护层上通过掩模板依次进行曝光、显影、干刻和剥离形成过孔15。
7)在第二绝缘保护层的表面沉积透明导电层，并通过光刻工艺形成多个像素电极13和多条虚设数据线8，且将各虚设数据线8的两端分别通过过孔15连接在两条共同电压电极线14上。
在步骤7)中，在第二绝缘保护层的表面通过物理气相沉积形成透明导电层。其中，透明导电层的厚度为400～1000埃米。在透明导电层上通过掩模板依次进行曝光、显影、蚀刻和剥离形成多个像素电极13和多条虚设数据线8。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (10)

  1. 一种薄膜晶体管液晶显示器阵列基板，其中，包括基板，在所述基板上设置有多条数据线、多条虚设数据线、多条第一栅极线和多条第二栅极线，多条所述数据线和多条所述虚设数据线呈纵向交替间隔布置，多条所述第一栅极线和多条所述第二栅极线呈横向交替间隔布置，在多条所述数据线、多条所述虚设数据线、多条所述第一栅极线和多条所述第二栅极线之间围设有多组像素单元，每组所述像素单元均包括一奇数列第一薄膜晶体管和一偶数列第二薄膜晶体管，每组两相邻的所述第一薄膜晶体管和所述第二薄膜晶体管的源极共同连接在所述数据线上，每组相邻的两所述第一薄膜晶体管和所述第二薄膜晶体管的栅极均分别连接在所述第一栅极线和所述第二栅极线上，各所述第一薄膜晶体管和所述第二薄膜晶体管的漏极分别连接一像素电极；各所述虚设数据线的两端分别通过一共同电压电极线连接，所述共同电压电极线横向设置在所述基板上。
  2. 根据权利要求1所述的薄膜晶体管液晶显示器阵列基板，其中，在每一所述数据线的上方均设置有一遮光电极线，多个所述遮光电极线与多个所述像素电极之间呈交替间隔布置。
  3. 根据权利要求1所述的薄膜晶体管液晶显示器阵列基板，其中，各所述虚设数据线的两端分别通过过孔共同连接在共同电压电极线上。
  4. 根据权利要求1所述的薄膜晶体管液晶显示器阵列基板，其中，每列所述第一薄膜晶体管均包括多个间隔布置的所述第一薄膜晶体管，每列所述第二薄膜晶体管均包括多个间隔布置的所述第二薄膜晶体管。
  5. 一种薄膜晶体管液晶显示器阵列基板的制作方法，其中，所述方法包括以下步骤：
    1)在基板上沉积第一金属层，通过光刻工艺形成多条第一栅极线、多条第二栅极线和两条共同电压电极线；
    2)在第一金属层的表面沉积栅绝缘层，并在栅绝缘层的表面沉积半导体活性层，接着在半导体活性层的表面形成欧姆接触层；
    3)在硅岛结构的表面沉积第二金属层，通过光刻工艺形成源极、漏极和多条数据线；
    4)在第二金属层的表面沉积第一绝缘保护层；
    5)利用黄光工艺制作红色色组、绿色色组和蓝色色组；
    6)在半导体活性层、源极和漏极的外部沉积第二层绝缘保护层，通过光刻工艺形成过孔；
    7)在第二绝缘保护层的表面沉积透明导电层，通过光刻工艺形成多个像素电极和多条虚设数据线，且将各虚设数据线的两端分别通过过孔连接在两条共同电压电极线上。
  6. 根据权利要求5所述的方法，其中，在所述步骤1)中，在基板上通过物理气相沉积形成第一金属层，第一金属层采用铝、钼、铜或合金制成，第一金属层的厚度为3000～6000埃米；在第一金属层上通过掩模板依次进行曝光、显影、湿刻和剥离形成多条第一栅极线、多条第二栅极线和两条共同电压电极线。
  7. 根据权利要求5所述的方法，其中，在所述步骤2)中，在第一金属层的表面通过等离子体增强化学气相沉积形成栅绝缘层，栅绝缘层为氮化硅膜或氧化硅膜，栅绝缘层的厚度为2000～5000埃米；在欧姆接触层上通过掩模板依次进行曝光、显影、干刻和剥离形成硅岛结构；半导体活性层为非晶硅层，半导体活性层的厚度为1500～3000埃米。
  8. 根据权利要求5所述的方法，其中，在所述步骤3)中，第二金属层采用铝、钼、铜或合金制成，第二金属层的厚度为3000～6000埃米，在第二金属层上通过灰色调掩模板依次进行曝光、显影、一次金属蚀刻、一次干刻、两次蚀刻、两次干刻和剥离形成源极、漏极和多条数据线。
  9. 根据权利要求5所述的方法，其中，在所述步骤4)中，在第二金属层的表面通过等离子体增强化学气相沉积形成第一绝缘保护层，第一绝缘保护层为氮化硅膜或氧化硅膜，第一绝缘保护层的厚度为500～2000埃米。
  10. 根据权利要求5所述的方法，其中，在所述步骤6)中，在半导体活性层、源极和漏极的外部通过等离子体增强化学气相沉积形成第二层绝缘保护层，第二绝缘保护层为氮化硅膜或氧化硅膜，第二绝缘保护层的厚度为500～2000埃米，在第二绝缘保护层上通过掩模板依次进行曝光、显影、干刻和剥离形成过孔；在所述步骤7)中，在第二绝缘保护层的表面通过物理气相沉积形成透明导电层，透明导电层的厚度为400～1000埃米，在透明导电层上通过掩模板依次进行曝光、显影、蚀刻和剥离形成多个像素电极和多条虚设电极线。
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