WO2019061601A1 - 一种薄膜晶体管阵列基板及显示装置 - Google Patents

一种薄膜晶体管阵列基板及显示装置 Download PDF

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Publication number
WO2019061601A1
WO2019061601A1 PCT/CN2017/107152 CN2017107152W WO2019061601A1 WO 2019061601 A1 WO2019061601 A1 WO 2019061601A1 CN 2017107152 W CN2017107152 W CN 2017107152W WO 2019061601 A1 WO2019061601 A1 WO 2019061601A1
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drain
disposed
thin film
film transistor
source
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PCT/CN2017/107152
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English (en)
French (fr)
Inventor
洪光辉
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武汉华星光电技术有限公司
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Priority to US15/740,985 priority Critical patent/US10756120B2/en
Publication of WO2019061601A1 publication Critical patent/WO2019061601A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a thin film transistor array substrate and a display device.
  • In_Cell is TP (touch Panel, touch panel) A panel design that integrates into a thin film transistor liquid crystal display (TFT-LCD) to reduce the thickness of the panel and even the whole machine.
  • TFT-LCD thin film transistor liquid crystal display
  • In_Cell panel pixel structure to achieve high PPI of In_Cell panel (Pixels Per Inch, the number of pixels per inch, is usually achieved by sacrificing the aperture ratio of the pixel structure or the yield of the product.
  • the technical problem to be solved by the present invention is to provide a thin film transistor array substrate and a display device capable of realizing a high PPI of a display device while ensuring an aperture ratio of a pixel unit and a product yield.
  • the present invention adopts a technical solution to provide a thin film transistor array substrate, wherein the thin film transistor array substrate includes: a glass substrate; a plurality of scan lines formed on the glass substrate, and a plurality of data lines intersecting by the plurality of scan lines and a plurality of pixel units formed by the plurality of scan lines and the plurality of data lines, wherein each of the pixel units includes a thin film transistor and is electrically connected to the thin film transistor a pixel electrode, wherein: the thin film transistor includes a gate, a source, and a drain, the gate is electrically connected to the scan line, the source is electrically connected to the data line, and the drain and the drain The pixel electrode is electrically connected, wherein the source is disposed in the same layer as the data line, the drain and the source are respectively disposed in different layers, and an active layer is disposed above the glass substrate, a gate is disposed above the active layer, and the scan line and the gate are disposed in a same layer, the
  • a thin film transistor array substrate including: a glass substrate; a plurality of scanning lines formed on the glass substrate and intersecting the plurality of scanning lines a plurality of data lines and a plurality of pixel units formed by the plurality of scan lines and the plurality of data lines, wherein each of the pixel units includes a thin film transistor and a pixel electrode electrically connected to the thin film transistor, wherein: the thin film transistor includes a gate a source and a drain, the gate is electrically connected to the scan line, the source is electrically connected to the data line, and the drain is electrically connected to the pixel electrode, wherein the source is disposed in the same layer as the data line, and the drain and the source are respectively disposed at Different layers.
  • a display device including a thin film transistor array substrate
  • the thin film transistor array substrate includes: a glass substrate; and a plurality of strips formed on the glass substrate a scan line, a plurality of data lines intersecting the plurality of scan lines, and a plurality of pixel units formed by the plurality of scan lines and the plurality of data lines, wherein each of the pixel units includes a thin film transistor and a pixel electrode electrically connected to the thin film transistor, wherein: the thin film transistor includes a gate, a source, and a drain, the gate is electrically connected to the scan line, and the source is electrically connected to the data line, The drain is electrically connected to the pixel electrode, wherein the source is disposed in the same layer as the data line, and the drain and the source are respectively disposed in different layers.
  • the invention has the beneficial effects that the present invention provides a thin film transistor array substrate and a display device, which are different from the prior art.
  • the thin film transistor array substrate includes a glass substrate, a plurality of scan lines formed on the glass substrate, a plurality of data lines intersecting the plurality of scan lines, and a plurality of pixel units formed by the plurality of scan lines and the plurality of data lines, wherein Each pixel unit includes a thin film transistor and a pixel electrode electrically connected to the thin film transistor.
  • the thin film transistor includes a gate, a source and a drain, the gate is electrically connected to the scan line, the source is electrically connected to the data line, and the drain is connected.
  • the pixel electrode is electrically connected, wherein the source is disposed in the same layer as the data line, and the drain and the source are respectively disposed in different layers. Therefore, the present invention does not reduce the size of the pixel unit by setting the source and the data lines of the same layer and the source and the drain of the different layers by reducing the distance between the adjacent two data lines.
  • the distance between the drain and the data line that is, the setting of the small-sized pixel unit is not affected by the drain, and therefore, the position and size of the drain and the source can ensure the aperture ratio of the pixel unit and the direction of the product yield. Settings. That is, the high PPI of the display device can be achieved while ensuring the aperture ratio of the pixel unit and the product yield.
  • FIG. 1 is a schematic structural diagram of a thin film transistor array substrate according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional structural view taken along line I-II of the pixel unit shown in FIG. 1;
  • FIG. 3 is a schematic enlarged view showing a single pixel unit of the thin film transistor array substrate shown in FIG. 1;
  • FIG. 4 is a schematic structural diagram of a display device according to an embodiment of the present invention.
  • FIG. 1 is a schematic structural diagram of a thin film transistor array substrate according to an embodiment of the present invention
  • FIG. 2 is a cross-sectional structural view along the line I-II of the pixel unit shown in FIG. 3 is a schematic enlarged view showing a single pixel unit of the thin film transistor array substrate shown in FIG. 1.
  • the thin film transistor array substrate 10 of the present embodiment includes a glass substrate 11, a plurality of scanning lines 12 formed on the glass substrate 11, a plurality of data lines 13 intersecting the plurality of scanning lines 12, and a plurality of A plurality of pixel units 14 formed by the strip scan lines 12 and the plurality of data lines 13.
  • Each of the pixel units 14 includes a thin film transistor T and a pixel electrode 100 electrically connected to the thin film transistor T.
  • the thin film transistor T in this embodiment includes a gate G, a source S and a drain D.
  • the gate G is electrically connected to the scan line 12
  • the source S is electrically connected to the data line 13
  • the drain D is electrically connected to the pixel electrode 100.
  • the source S is disposed in the same layer as the data line 13, and the D drain and the source S are respectively disposed in different layers.
  • the present embodiment sets the small-sized pixel unit by reducing the distance between the adjacent two data lines 13 by setting the source S and the data line 13 of the same layer and the source S and the drain D of the different layers.
  • the distance between the drain D and the data line 13 is not reduced, that is, the arrangement of the small-sized pixel unit 100 is not affected by the drain D. Therefore, the position and size of the drain D and the source S can be Set to the direction of the aperture ratio and product yield of the pixel unit. That is, the high PPI of the display device can be achieved while ensuring the aperture ratio of the pixel unit 100 and the product yield.
  • the thin film transistor array substrate 10 further includes an active layer 16 disposed above the glass substrate 11, a gate G disposed above the active layer 16, and the scan line 12 and the gate G being disposed in the same layer, the source S And the drain D is disposed above the gate G, wherein the drain D is disposed above the source S.
  • the source S and the drain G are electrically connected to the active layer 16, respectively.
  • the drain D may also be disposed under the source S and the data line 13 or other locations as long as it is different from the source S and the data line 13 and it may be the active layer 16 and the pixel electrode 100 Just make an electrical connection.
  • the thin film transistor array substrate 10 further includes a first insulating layer 17, a second insulating layer 18, a third insulating layer 19, and a fourth insulating layer 101.
  • the first insulating layer 17 is disposed between the active layer 16 and the gate G.
  • the second insulating layer 18 is disposed between the gate G and the source S, and the first via hole 103 is disposed on the second insulating layer 18, and the first via hole 103 passes through the first insulating layer 17 and the second insulating layer 18 and exposing the active layer 16, the source S is electrically connected to the active layer 16 through the first via 103.
  • the third insulating layer 19 is disposed between the source S and the drain D.
  • the second via hole 104 is disposed on the third insulating layer 19.
  • the second via hole 104 passes through the first insulating layer 17 and the second insulating layer. 18 and the third insulating layer 19 expose the active layer 16, and the drain D is electrically connected to the active layer 16 through the second via 104.
  • the fourth insulating layer 101 is disposed on the drain D.
  • the third via hole 105 is disposed on the fourth insulating layer 101.
  • the third via hole 105 exposes the drain D.
  • the pixel electrode 100 is disposed on the fourth insulating layer 101. It is electrically connected to the drain D through the third via 105.
  • the gate G, the source S and the drain D may be formed by using three different metal materials or other conductive materials. It can also be formed from the same metal material or other conductive materials.
  • the thin film transistor array substrate 10 of the present embodiment can form a touch display.
  • the thin film transistor array substrate 10 further includes a touch signal line 15 , and the touch signal line 15 and the drain D are disposed in the same layer, and the touch signal line 15 and the drain D can be made of the same material, and can be formed by the same mask. Additional costs are required. In other embodiments, the touch signal line 15 and the drain D may also be made of different materials.
  • the touch signal line 15 is disposed in parallel with the data line 13 and above the data line 13. Since the number of the touch signal lines 15 is determined by the number of touch units, and the number of touch units is smaller than the number of the pixel units, the touch signal lines 15 are not disposed above all of the data lines 13.
  • the specific setting is as follows: Referring to FIG. 3, the pixel units Sub1, Sub2, and Sub3 are pixel units of the same row, and may be pixel units of different colors respectively. In the pixel unit of the same row, at least one of the adjacent two pixel units 100 is not provided with the touch signal line 15. As shown in FIG. 3, the pixel units Sub2 and Sub3 are provided with the touch signal line 15, and the pixel unit Sub1 is not provided with the touch signal line 15.
  • the distance d1 between the drain D and the touch signal line 15 is greater than the distance d2 between the drain D and the data line 13 of the adjacent pixel unit, such as the pixel unit Sub2. Since the touch signal line 15 is disposed in parallel with the data line 13, the distance d1 between the drain level D and the data line 13 of its own pixel unit Sub2 is greater than the distance d2 between the drain D and the data line 13 of the adjacent pixel unit. Or the distance d2 between the drain D and the touch signal line 15 is greater than the distance d1 between the drain D and the data line 13 of the own pixel unit, such as the setting of the pixel unit Sub3.
  • the distance d1 between the drain D and the data line 13 of its own pixel unit Sub3 is smaller than the distance d2 between the drain D and the data line 13 of the adjacent pixel unit. Therefore, the electrical connection between the drain D and the touch signal line 15 can be prevented, and the small size of the pixel unit can be realized as much as possible on the basis of ensuring the normal operation of the pixel unit, thereby realizing the high PPI of the panel.
  • the distance d1 between the drain D and the data line 13 of the pixel unit of its own is equal to the drain D and the data line 13 of the adjacent pixel unit. Distance d2.
  • the thin film transistor array substrate 10 further includes a light shielding layer 102 disposed between the glass substrate 11 and the active layer 16 for blocking the transmission of light entering from the side of the glass substrate 11 to In the source layer 16.
  • the present embodiment can achieve a high PPI of the display device while ensuring the aperture ratio of the pixel unit 100 and the product yield.
  • the invention also provides a display device, please refer to FIG. 4 in detail.
  • the display device 40 of the present embodiment includes a thin film transistor array substrate 41, a color filter substrate 42, and a liquid crystal layer 43.
  • the thin film transistor array substrate 41 and the color filter substrate 42 are disposed opposite to each other, and the liquid crystal layer 43 is disposed between the thin film transistor array substrate 41 and the color filter substrate 42.
  • the thin film transistor array substrate 41 is the thin film transistor array substrate 10 described above, and details are not described herein again.
  • the present invention can achieve a high PPI of the display device while ensuring the aperture ratio of the pixel unit 100 and the product yield.

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
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  • Crystallography & Structural Chemistry (AREA)
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Abstract

一种薄膜晶体管阵列基板（10）及显示装置。薄膜晶体管阵列基板（10）包括多条扫描线（12）、数据线（13）以及像素单元（14），其中，每个像素单元（14）包括一个薄膜晶体管（T）和像素电极（100），薄膜晶体管（T）包括栅极（G）、源极（S）以及漏极（D），栅极（G）与扫描线（12）电连接，源极（S）与数据线（13）电连接，漏极（D）与像素电极（100）电连接，其中，源极（S）与数据线（13）同层设置，漏极（D）与源极（S）分别设置在不同层。因此，能够在保证像素单元（14）的开口率和产品良率的情况下实现显示装置的高PPI。

Description

一种薄膜晶体管阵列基板及显示装置
【技术领域】
本发明涉及显示技术领域，尤其是涉及一种薄膜晶体管阵列基板及显示装置。
【背景技术】
In_Cell，是将TP（touch panel，触控面板）功能集成在薄膜晶体管液晶显示器（TFT-LCD）中的一种面板设计方案，可以实现面板乃至整机的轻薄化。现有的In_Cell面板像素结构中，为实现In_Cell面板的高PPI（Pixels Per Inch，每英寸所拥有的像素数目）化，通常是通过牺牲像素结构的开口率或者产品的良率来实现。
【发明内容】
本发明主要解决的技术问题是提供一种薄膜晶体管阵列基板及显示装置，能够在保证像素单元的开口率和产品良率的情况下实现显示装置的高PPI。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种薄膜晶体管阵列基板，其中，所述薄膜晶体管阵列基板包括：玻璃基板；在所述玻璃基板上形成的多条扫描线、与所述多条扫描线相交的多条数据线以及由所述多条扫描线和多条数据线形成的多个像素单元，其中，每个像素单元包括一个薄膜晶体管和与所述薄膜晶体管电连接的像素电极，其中：所述薄膜晶体管包括栅极、源极以及漏极，所述栅极与所述扫描线电连接，所述源极与所述数据线电连接，所述漏极与所述像素电极电连接，其中，所述源极与所述数据线同层设置，所述漏极与所述源极分别设置在不同层；有源层，设置在所述玻璃基板上方，所述栅极设置在所述有源层上方，且所述扫描线和所述栅极同层设置，所述源极以及漏极设置在所述栅极上方，并且所述源极以及漏极分别与所述有源层电连接，其中，所述漏极设置在所述源极的上方；遮光层，所述遮光层设置在所述玻璃基板和所述有源层之间，所述遮光层用于阻挡从所述玻璃基板侧进入的光线传输到所述有源层中。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种薄膜晶体管阵列基板，薄膜晶体管阵列基板包括：玻璃基板；在玻璃基板上形成的多条扫描线、与多条扫描线相交的多条数据线以及由多条扫描线和多条数据线形成的多个像素单元，其中，每个像素单元包括一个薄膜晶体管和与薄膜晶体管电连接的像素电极，其中：薄膜晶体管包括栅极、源极以及漏极，栅极与扫描线电连接，源极与数据线电连接，漏极与像素电极电连接，其中，源极与数据线同层设置，漏极与源极分别设置在不同层。
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种显示装置，该显示装置包括薄膜晶体管阵列基板，薄膜晶体管阵列基板包括：玻璃基板；在所述玻璃基板上形成的多条扫描线、与所述多条扫描线相交的多条数据线以及由所述多条扫描线和多条数据线形成的多个像素单元，其中，每个像素单元包括一个薄膜晶体管和与所述薄膜晶体管电连接的像素电极，其中：所述薄膜晶体管包括栅极、源极以及漏极，所述栅极与所述扫描线电连接，所述源极与所述数据线电连接，所述漏极与所述像素电极电连接，其中，所述源极与所述数据线同层设置，所述漏极与所述源极分别设置在不同层。
本发明的有益效果是：区别于现有技术的情况，本发明提供一种薄膜晶体管阵列基板及显示装置。该薄膜晶体管阵列基板包括玻璃基板、在玻璃基板上形成的多条扫描线、与多条扫描线相交的多条数据线以及由多条扫描线和多条数据线形成的多个像素单元，其中，每个像素单元包括一个薄膜晶体管和与薄膜晶体管电连接的像素电极，薄膜晶体管包括栅极、源极以及漏极，栅极与扫描线电连接，源极与数据线电连接，漏极与像素电极电连接，其中，源极与数据线同层设置，漏极与源极分别设置在不同层。因此，本发明通过设置相同层的源极和数据线以及不同层的源极和漏极，使得通过减小相邻的两根数据线的距离来设置小尺寸的像素单元时，不会减小漏极与数据线之间的距离，即小尺寸的像素单元的设置不受到漏极的影响，因此，漏极和源极的位置和大小可往保证像素单元的开口率和产品良率的方向设置。即能够在保证像素单元的开口率和产品良率的情况下实现显示装置的高PPI。
【附图说明】
图1是本发明实施例提供的一种薄膜晶体管阵列基板的结构示意图；
图2是沿图1所示的像素单元的I-II线的剖面结构示意图；
图3是图1所示的薄膜晶体管阵列基板的单个像素单元的放大结构示意图；
图4是本发明实施例提供的一种显示装置的结构示意图。
【具体实施方式】
下面将结合本发明实施例的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请一并参阅图1-图3，图1是本发明实施例提供的一种薄膜晶体管阵列基板的结构示意图，图2是沿图1所示的像素单元的I-II线的剖面结构示意图，图3是图1所示的薄膜晶体管阵列基板的单个像素单元的放大结构示意图。首先如图1所示，本实施例的薄膜晶体管阵列基板10包括玻璃基板11、在玻璃基板11上形成的多条扫描线12、与多条扫描线12相交的多条数据线13以及由多条扫描线12和多条数据线13形成的多个像素单元14。其中，每个像素单元14包括一个薄膜晶体管T和与薄膜晶体管T电连接的像素电极100。
请一并参阅图2和图3所示，本实施例中的薄膜晶体管T包括栅极G、源极S以及漏极D。其中，栅极G与扫描线12电连接，源极S与数据线13电连接，漏极D与像素电极100电连接。本实施例中，源极S与数据线13同层设置，D漏极与源极S分别设置在不同层。
因此，本实施例通过设置相同层的源极S和数据线13以及不同层的源极S和漏极D，使得通过减小相邻的两根数据线13的距离来设置小尺寸的像素单元100时，不会减小漏极D与数据线之13间的距离，即小尺寸的像素单元100的设置不受到漏极D的影响，因此，漏极D和源极S的位置和大小可往保证像素单元的开口率和产品良率的方向设置。即能够在保证像素单元100的开口率和产品良率的情况下实现显示装置的高PPI。
本实施例中，薄膜晶体管阵列基板10还包括有源层16，设置在玻璃基板11上方，栅极G设置在有源层16上方，且扫描线12和栅极G同层设置，源极S以及漏极D设置在栅极G上方，其中，漏极D设置在源极S的上方。源极S以及漏极G分别与有源层16电连接。
在其他实施例中，漏极D还可以设置在源极S和数据线13的下方或其他位置，只要其与源极S和数据线13不同层并且其可将有源层16与像素电极100进行电连接即可。
本实施例中，薄膜晶体管阵列基板10还包括第一绝缘层17、第二绝缘层18、第三绝缘层19以及第四绝缘层101。其中，第一绝缘层17设置在有源层16和栅极G之间。第二绝缘层18设置在栅极G和源极S之间，在第二绝缘层18上设置第一导通孔103，第一导通孔103穿过第一绝缘层17和第二绝缘层18并露出有源层16，源极S通过第一导通孔103与有源层16电连接。第三绝缘层19设置在源极S与漏极D之间，在第三绝缘层19上设置第二导通孔104，第二导通孔104穿过第一绝缘层17、第二绝缘层18以及第三绝缘层19并露出有源层16，漏极D通过第二导通孔104与有源层16电连接。第四绝缘层101设置在漏极D上，在第四绝缘层101上设置第三导通孔105，第三导通孔105露出漏极D，像素电极100设置在第四绝缘层101上并通过第三导通孔105与漏极D电连接。
本实施例中，栅极G、源极S和漏极D可采用三种不同的金属材质或其他导电材质形成。也可以采用相同的金属材质或其他导电材质形成。
本实施例的薄膜晶体管阵列基板10可形成触摸显示。薄膜晶体管阵列基板10还包括触控信号线15，触控信号线15与漏极D同层设置，并且触控信号线15与漏极D可采用相同的材质，可以通过同一道光罩形成，不需额外增加成本。在其他实施例中，触控信号线15与漏极D也可采用不相同的材质。
其中，触控信号线15与数据线13平行设置并位于数据线13的上方。由于触控信号线15的数量是由触控单元的数量而决定的，而触控单元的数量比像素单元的数量少，因此并不是所有的数据线13的上方都会设置触控信号线15。具体设置为：请参阅图3，像素单元Sub1、Sub2和Sub3为同一行的像素单元，并且可为分别显示不同颜色的像素单元。在同一行的像素单元中，相邻的两个像素单元100至少一个未设置有触控信号线15。如图3所示，像素单元Sub2和Sub3设置了触控信号线15，而像素单元Sub1未设置触控信号线15。在同一行的像素单元中，漏极D与触控信号线15的距离d1大于漏极D与相邻的像素单元的数据线13的距离d2，如像素单元Sub2。由于触控信号线15与数据线13平行设置，因此，漏级D与自身的像素单元Sub2的数据线13的距离d1大于漏极D与相邻的像素单元的数据线13的距离d2。或者漏极D与触控信号线15的距离d2大于漏极D与自身像素单元的数据线13的距离d1，如像素单元Sub3的设置。同理，漏级D与自身的像素单元Sub3的数据线13的距离d1小于漏极D与相邻的像素单元的数据线13的距离d2。由此可以防止漏级D与触控信号线15之间电连接，在保证像素单元正常工作的基础上尽可能的实现像素单元的小尺寸化，进而实现面板的高PPI。
值得注意的是，在未设置触控信号线15的像素单元Sub1中，其漏极D与自身的像素单元的数据线13的距离d1等于漏极D与相邻的像素单元的数据线13的距离d2。
请再参阅图2，薄膜晶体管阵列基板10还包括遮光层102，遮光层102设置在玻璃基板11和有源层16之间，遮光层102用于阻挡从玻璃基板11侧进入的光线传输到有源层16中。
因此，本实施例能够在保证像素单元100的开口率和产品良率的情况下实现显示装置的高PPI。
本发明还提供了一种显示装置，具体请参阅图4。
如图4所示，本实施例的显示装置40包括薄膜晶体管阵列基板41、彩膜基板42以及液晶层43。其中，薄膜晶体管阵列基板41和彩膜基板42相对设置，液晶层43设置在薄膜晶体管阵列基板41和彩膜基板42之间。其中，薄膜晶体管阵列基板41为前文所述的薄膜晶体管阵列基板10，在此不再赘述。
综上所述，本发明能够在保证像素单元100的开口率和产品良率的情况下实现显示装置的高PPI。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (20)

  1. 一种薄膜晶体管阵列基板，其中，所述薄膜晶体管阵列基板包括：
    玻璃基板；
    在所述玻璃基板上形成的多条扫描线、与所述多条扫描线相交的多条数据线以及由所述多条扫描线和多条数据线形成的多个像素单元，其中，每个像素单元包括一个薄膜晶体管和与所述薄膜晶体管电连接的像素电极，其中：
    所述薄膜晶体管包括栅极、源极以及漏极，所述栅极与所述扫描线电连接，所述源极与所述数据线电连接，所述漏极与所述像素电极电连接，其中，所述源极与所述数据线同层设置，所述漏极与所述源极分别设置在不同层；
    有源层，设置在所述玻璃基板上方，所述栅极设置在所述有源层上方，且所述扫描线和所述栅极同层设置，所述源极以及漏极设置在所述栅极上方，并且所述源极以及漏极分别与所述有源层电连接，其中，所述漏极设置在所述源极的上方；
    遮光层，所述遮光层设置在所述玻璃基板和所述有源层之间，所述遮光层用于阻挡从所述玻璃基板侧进入的光线传输到所述有源层中。
  2. 根据权利要求1所述的薄膜晶体管阵列基板，其中，所述薄膜晶体管阵列基板还包括：
    第一绝缘层，设置在所述有源层和所述栅极之间；
    第二绝缘层，设置在所述栅极和所述源极之间，在所述第二绝缘层上设置第一导通孔，所述第一导通孔穿过所述第一绝缘层和所述第二绝缘层并露出所述有源层，所述源极通过所述第一导通孔与所述有源层电连接；
    第三绝缘层，设置在所述源极与所述漏极之间，在所述第三绝缘层上设置第二导通孔，所述第二导通孔穿过所述第一、第二以及第三绝缘层并露出所述有源层，所述漏极通过所述第二导通孔与所述有源层电连接；
    第四绝缘层，设置在所述漏极上，在所述第四绝缘层上设置第三导通孔，所述第三导通孔露出所述漏极，所述像素电极设置在所述第四绝缘层上并通过所述第三导通孔与所述漏极电连接。
  3. 一种薄膜晶体管阵列基板，其中，所述薄膜晶体管阵列基板包括：
    玻璃基板；
    在所述玻璃基板上形成的多条扫描线、与所述多条扫描线相交的多条数据线以及由所述多条扫描线和多条数据线形成的多个像素单元，其中，每个像素单元包括一个薄膜晶体管和与所述薄膜晶体管电连接的像素电极，其中：
    所述薄膜晶体管包括栅极、源极以及漏极，所述栅极与所述扫描线电连接，所述源极与所述数据线电连接，所述漏极与所述像素电极电连接，其中，所述源极与所述数据线同层设置，所述漏极与所述源极分别设置在不同层。
  4. 根据权利要求3所述的薄膜晶体管阵列基板，其中，所述薄膜晶体管阵列基板还包括：
    有源层，设置在所述玻璃基板上方，所述栅极设置在所述有源层上方，且所述扫描线和所述栅极同层设置，所述源极以及漏极设置在所述栅极上方，并且所述源极以及漏极分别与所述有源层电连接。
  5. 根据权利要求4所述的薄膜晶体管阵列基板，其中，所述漏极设置在所述源极的上方。
  6. 根据权利要求5所述的薄膜晶体管阵列基板，其中，所述薄膜晶体管阵列基板还包括：
    第一绝缘层，设置在所述有源层和所述栅极之间；
    第二绝缘层，设置在所述栅极和所述源极之间，在所述第二绝缘层上设置第一导通孔，所述第一导通孔穿过所述第一绝缘层和所述第二绝缘层并露出所述有源层，所述源极通过所述第一导通孔与所述有源层电连接；
    第三绝缘层，设置在所述源极与所述漏极之间，在所述第三绝缘层上设置第二导通孔，所述第二导通孔穿过所述第一、第二以及第三绝缘层并露出所述有源层，所述漏极通过所述第二导通孔与所述有源层电连接；
    第四绝缘层，设置在所述漏极上，在所述第四绝缘层上设置第三导通孔，所述第三导通孔露出所述漏极，所述像素电极设置在所述第四绝缘层上并通过所述第三导通孔与所述漏极电连接。
  7. 根据权利要求5所述的薄膜晶体管阵列基板，其中，所述源极和所述漏极的材质不同。
  8. 根据权利要求7所述的薄膜晶体管阵列基板，其中，所述薄膜晶体管阵列基板还包括触控信号线，所述触控信号线与所述漏极同层设置，并且所述触控信号线与所述漏极采用相同的材质。
  9. 根据权利要求8所述的薄膜晶体管阵列基板，其中，所述触控信号线与所述数据线平行设置并位于所述数据线的上方，且在同一行的像素单元中，相邻的两个像素单元至少一个未设置有所述触控信号线。
  10. 根据权利要求9所述的薄膜晶体管阵列基板，其中，在同一行的像素单元中，所述漏极与所述触控信号线的距离大于所述漏极与相邻的像素单元的数据线的距离。
  11. 根据权利要求4所述的薄膜晶体管阵列基板，其中，所述薄膜晶体管阵列基板还包括遮光层，所述遮光层设置在所述玻璃基板和所述有源层之间，所述遮光层用于阻挡从所述玻璃基板侧进入的光线传输到所述有源层中。
  12. 一种显示装置，其中，所述显示装置包括薄膜晶体管阵列基板，所述薄膜晶体管阵列基板包括：
    玻璃基板；
    在所述玻璃基板上形成的多条扫描线、与所述多条扫描线相交的多条数据线以及由所述多条扫描线和多条数据线形成的多个像素单元，其中，每个像素单元包括一个薄膜晶体管和与所述薄膜晶体管电连接的像素电极，其中：
    所述薄膜晶体管包括栅极、源极以及漏极，所述栅极与所述扫描线电连接，所述源极与所述数据线电连接，所述漏极与所述像素电极电连接，其中，所述源极与所述数据线同层设置，所述漏极与所述源极分别设置在不同层。
  13. 根据权利要求12所述的显示装置，其中，所述薄膜晶体管阵列基板还包括：
    有源层，设置在所述玻璃基板上方，所述栅极设置在所述有源层上方，且所述扫描线和所述栅极同层设置，所述源极以及漏极设置在所述栅极上方，并且所述源极以及漏极分别与所述有源层电连接。
  14. 根据权利要求13所述的显示装置，其中，所述漏极设置在所述源极的上方。
  15. 根据权利要求14所述的显示装置，其中，所述薄膜晶体管阵列基板还包括：
    第一绝缘层，设置在所述有源层和所述栅极之间；
    第二绝缘层，设置在所述栅极和所述源极之间，在所述第二绝缘层上设置第一导通孔，所述第一导通孔穿过所述第一绝缘层和所述第二绝缘层并露出所述有源层，所述源极通过所述第一导通孔与所述有源层电连接；
    第三绝缘层，设置在所述源极与所述漏极之间，在所述第三绝缘层上设置第二导通孔，所述第二导通孔穿过所述第一、第二以及第三绝缘层并露出所述有源层，所述漏极通过所述第二导通孔与所述有源层电连接；
    第四绝缘层，设置在所述漏极上，在所述第四绝缘层上设置第三导通孔，所述第三导通孔露出所述漏极，所述像素电极设置在所述第四绝缘层上并通过所述第三导通孔与所述漏极电连接。
  16. 根据权利要求14所述的显示装置，其中，所述源极和所述漏极的材质不同。
  17. 根据权利要求16所述的显示装置，其中，所述薄膜晶体管阵列基板还包括触控信号线，所述触控信号线与所述漏极同层设置，并且所述触控信号线与所述漏极采用相同的材质。
  18. 根据权利要求17所述的显示装置，其中，所述触控信号线与所述数据线平行设置并位于所述数据线的上方，且在同一行的像素单元中，相邻的两个像素单元至少一个未设置有所述触控信号线。
  19. 根据权利要求18所述的显示装置，其中，在同一行的像素单元中，所述漏极与所述触控信号线的距离大于所述漏极与相邻的像素单元的数据线的距离。
  20. 根据权利要求13所述的显示装置，其中，所述薄膜晶体管阵列基板还包括遮光层，所述遮光层设置在所述玻璃基板和所述有源层之间，所述遮光层用于阻挡从所述玻璃基板侧进入的光线传输到所述有源层中。
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