WO2018223689A1 - 一种阵列基板、显示面板及显示装置 - Google Patents

一种阵列基板、显示面板及显示装置 Download PDF

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Publication number
WO2018223689A1
WO2018223689A1 PCT/CN2018/070097 CN2018070097W WO2018223689A1 WO 2018223689 A1 WO2018223689 A1 WO 2018223689A1 CN 2018070097 W CN2018070097 W CN 2018070097W WO 2018223689 A1 WO2018223689 A1 WO 2018223689A1
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Prior art keywords
signal line
common electrode
array substrate
metal
thin film
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PCT/CN2018/070097
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English (en)
French (fr)
Inventor
刘弘
武新国
王凤国
史大为
王子峰
王文涛
杨璐
李峰
郭志轩
李元博
马波
Original Assignee
京东方科技集团股份有限公司
鄂尔多斯市源盛光电有限责任公司
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Application filed by 京东方科技集团股份有限公司, 鄂尔多斯市源盛光电有限责任公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/070,598 priority Critical patent/US10790310B2/en
Publication of WO2018223689A1 publication Critical patent/WO2018223689A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Definitions

  • Embodiments of the present invention relate to the field of display technologies, and in particular, to an array substrate, a display panel, and a display device.
  • the Touch Screen Panel With the rapid development of display technology, the Touch Screen Panel has gradually spread throughout people's lives.
  • the touch screen can be divided into an add-on touch panel, an on-cell touch panel, and an in-cell touch panel according to the composition structure.
  • the external touch screen is produced by separately separating the touch screen from the liquid crystal display (LCD), and then being bonded together to become a liquid crystal display with touch function.
  • the external touch screen has higher production cost and light transmittance. Low, thicker modules and other shortcomings.
  • the in-cell touch screen embeds the touch electrode of the touch screen inside the liquid crystal display, which can reduce the thickness of the whole module, and can greatly reduce the manufacturing cost of the touch screen, and is favored by the major panel manufacturers.
  • the embodiments of the present disclosure provide an array substrate, a display panel, and a display device, which can achieve effective contact between the touch signal line and the common electrode, reduce contact resistance, and improve detection accuracy of the touch screen to the touch position.
  • An embodiment of the present disclosure provides an array substrate, including: a substrate substrate, and a metal connection member, a first insulation layer, a signal line, a second insulation layer, and a common electrode disposed in sequence on the substrate;
  • the material of the metal connecting member is different from the material of the signal line;
  • the signal line and the common electrode are electrically connected by the metal connecting member; and a contact resistance between the metal connecting member and the common electrode is smaller than a contact resistance between the signal line and the common electrode .
  • the method further includes: a thin film transistor disposed between the common electrode and the substrate;
  • the signal line is made of the same material and the same layer as the source and the drain of the thin film transistor.
  • the signal line includes at least two kinds of metal materials disposed in a stack.
  • the signal line is composed of two layers of metal titanium material and a layer of metal aluminum material; and the metal aluminum material is located on two layers. Between the metal titanium materials.
  • the metal connector is the same material and the same layer as the gate of the thin film transistor.
  • the array substrate further includes a via hole for forming an electrical connection between the metal connector and the common electrode, wherein the thickness of the second insulating layer is greater than the thickness of the first insulating layer, and the via includes The first portion of the via of the first insulating layer and the second portion of the via that passes through the second insulating layer have a cross-sectional dimension of the first portion of the via that is greater than a cross-sectional dimension of the second portion of the via.
  • the thin film transistor is a top gate thin film transistor or a bottom gate thin film transistor.
  • the thin film transistor is a top gate type thin film transistor
  • the array substrate further includes: a light shielding layer disposed between the substrate substrate and the thin film transistor; and an orthographic projection of the light shielding layer on the substrate substrate to cover active in the thin film transistor An orthographic projection of a layer on the substrate;
  • the metal connecting member and the light shielding layer are made of the same material and are disposed in the same layer.
  • the orthographic projection of the light shielding layer on the substrate substrate completely overlaps with the orthographic projection of the active layer on the substrate substrate in the thin film transistor.
  • the metal connector comprises a metal molybdenum material.
  • the common electrode is a touch electrode; and the signal line is a touch signal line.
  • An embodiment of the present disclosure further provides a display panel comprising: the above array substrate provided as an embodiment of the present disclosure.
  • An embodiment of the present disclosure also provides a display device including the above display panel as provided by an embodiment of the present disclosure.
  • FIG. 1 is a side view of an array substrate in the prior art
  • FIG. 2 is a top plan view of an array substrate provided in an embodiment of the present disclosure
  • 3 to 6 are side views of the array substrate taken along the X-X' position shown in Fig. 2;
  • FIG. 7 is a schematic structural diagram of a display panel provided in an embodiment of the present disclosure.
  • the touch signal line is directly electrically connected to the touch electrode to realize the transmission of the touch signal.
  • 1 shows a side view of an array substrate.
  • the touch signal line 1 is located on the insulating layer 2, and is disposed in the same layer as the source and drain electrodes 3, and the touch electrode 5 is located on the flat layer 4. It is electrically connected to the touch signal line 1 through the via 6 in the flat layer 4.
  • the touch signal line is composed of a combination of titanium metal (Ti) and aluminum metal (Al), that is, the first layer is Ti, the second layer is Al, and the third layer is Ti, common electrode or touch electrode.
  • 5 is generally composed of indium tin oxide material (ITO).
  • Ti is easily oxidized, so that the oxidized Ti layer of the touch signal line generates a large contact resistance when it is in contact with the ITO, which affects the transmission of the touch signal, thereby affecting the touch screen touch. Control position detection accuracy.
  • An embodiment of the present disclosure provides an array substrate, such as a top view of the array substrate shown in FIG. 2, 100 denotes a gate line, 200 denotes a data line, 300 denotes a common electrode, and the common electrode 300 may be planar or may be Block-shaped, 400 denotes a slit-shaped pixel electrode, but the pixel electrode 400 is not limited to this structure, and 500 denotes a signal line electrically connected to the common electrode 300, and the connection relationship between the common electrode 300 and the signal line 500 is not shown in the drawing. .
  • the above-mentioned array substrate may include: a substrate substrate 10, and The metal connector 20, the first insulating layer 30, the signal line 500, the second insulating layer 40, and the common electrode 300 are sequentially disposed on the substrate 10; the material of the metal connector 20 and the material of the signal line 500 may be different;
  • the signal line 500 and the common electrode 300 are electrically connected by the metal connection 20; and the contact resistance between the metal connection 20 and the common electrode 300 is smaller than the contact resistance between the signal line 500 and the common electrode 300.
  • the above array substrate provided by the embodiment of the present disclosure realizes electrical connection between the signal line 500 and the common electrode 300 through the arrangement of the metal connector 20; and, due to the contact resistance between the metal connector 20 and the common electrode 300 Smaller, effective contact between the metal connector 20 and the common electrode 300 can be achieved, which facilitates transmission of the signal of the common electrode 300 to the corresponding chip through the signal line 500, and effectively avoids the signal line 500 and the common electrode 300.
  • the signal line 500 when it is formed, it may be disposed in the same layer and the same material as the source 51 and the drain 51' of the thin film transistor in the array substrate, that is, through one patterning process. Signal line 500, source and drain are available. Therefore, in the above array substrate provided by the embodiment of the present disclosure, as shown in FIG. 3 to FIG. 6, the thin film transistor 50 disposed between the common electrode 300 and the base substrate 10 may be further included;
  • the signal line 500 is made of the same material and in the same layer as the source 51 and the drain 51' of the thin film transistor 50.
  • the signal line when the signal line is fabricated, in order to reduce the contact resistance between the signal line and the corresponding component, effective contact between the signal line and the corresponding component is achieved, and the effective transmission of the signal is facilitated.
  • a plurality of metal materials are used to fabricate the signal line, and according to The work function of different metals is used to design the specific structure of the signal line. Therefore, in the above array substrate provided by the embodiment of the present disclosure, the signal line may include at least two kinds of metal materials disposed in a stack.
  • the signal line is composed of two metal materials
  • the signal line is composed of two layers of titanium metal material and one layer of metal aluminum material; and the metal aluminum material is located on two layers. Between metal titanium materials.
  • the signal line is not limited to the use of the metal titanium material and the metal aluminum material. In other embodiments, other metal materials that meet the actual needs may be used; and the signal line may also be a two-layer structure, and is not limited to the above. The three-layer structure is not limited herein.
  • the thin film transistor 50 may be a top gate thin film transistor or a bottom gate thin film transistor.
  • the thin film transistor is of a top gate type, and its structure is, from top to bottom, a source 51 and a drain 51', a first insulating layer 30, a gate 52, and a gate.
  • the thin film transistor 50 is of a bottom gate type, and its structure is, from top to bottom, a source 51 and a drain 51', a first insulating layer 30, an active layer 54, a gate insulating layer 53, and Gate 52.
  • the metal connection member 20 and the thin film transistor 50 may be The gate 52 is of the same material and is disposed in the same layer.
  • the array substrate may further include: disposed on the base substrate 10 and the thin film. a light shielding layer 60 between the transistors 50; and an orthographic projection of the light shielding layer 60 on the substrate substrate 10, covering an orthographic projection of the active layer 54 in the thin film transistor 50 on the substrate substrate 10 to prevent the backlight from entering the active At the time of layer 54, photo-generated carriers are generated to affect the activity of the active layer 54.
  • the orthographic projection of the light-shielding layer 60 on the substrate substrate 10 may completely overlap the orthographic projection of the active layer 54 in the thin film transistor 50 on the substrate substrate 10, as shown in FIGS. 3 and 5.
  • the orthographic projection of the active layer 54 in the thin film transistor 50 on the substrate substrate 10 completely falls within the orthographic projection of the light shielding layer 60 on the substrate substrate 10, as shown in FIG.
  • the metal connector 20 and the light shielding layer 60 may be made of the same material and in the same layer.
  • the metal joint 20 and the light shielding layer 60 can be formed by one patterning process, thereby reducing the number of patterns and exposures, simplifying the process and reducing the cost.
  • the layer and the common layer of the metal connector 20 are required.
  • the film layer between the layers of the electrode 300 is provided with via holes, and the number of film layers disposed between the layer where the metal connector 20 is located and the layer where the common electrode 300 is located is at least two, and the second insulating layer 40 is generally referred to as A flat layer for providing a flat surface to the common electrode 300.
  • the thickness of the flat layer is generally thick, which causes the via to be deep, which increases the difficulty in fabricating the via, and may also cause poor contact between the common electrode 300 and the metal connector 20.
  • the diameter of the first portion 71 of the via hole penetrating through the second insulating layer 40 and the first insulating layer 30 may be set to be larger than the via hole penetrating the gate insulating layer 53.
  • the diameter of the second portion 72, as shown in FIG. 4, is set as a sleeve hole structure, which can effectively avoid contact failure between the common electrode 300 and the metal connector 20, and reduces the manufacturing difficulty.
  • a via hole is provided for forming an electrical connection of the metal connector 20 and the common electrode 300, wherein since the thickness of the second insulating layer 40 is greater than the thickness of the first insulating layer 30,
  • the aperture includes a first portion 71 of the via through the first insulating layer and a second portion 72 of the via through the second insulating layer, the cross-sectional dimension of the first portion 71 of the via being greater than the cross-sectional dimension of the second portion 72 of the via (eg 4)).
  • the planar common electrode is generally divided into a plurality of regularly arranged blocks to form a block electrode, and the block electrode is formed. It can be used as a touch electrode.
  • the block electrode can also form an electric field with the pixel electrode to drive the liquid crystal for display; therefore, the above array provided by the embodiment of the present disclosure
  • the signal line in the substrate may be a touch signal line, and the touch signal received when the common electrode is used as the touch electrode is transmitted to the touch chip to implement the touch function.
  • the common electrode is usually made of a transparent conductive oxide, such as indium tin oxide (ITO), of course, not limited to ITO; in general, the contact resistance between ITO and oxidized metal titanium (Ti) is large, The contact resistance between the ITO and the metal molybdenum (Mo) is small; therefore, in the above array substrate provided by the embodiment of the present disclosure, the metal connector comprises a metal molybdenum material.
  • ITO indium tin oxide
  • Ti oxidized metal titanium
  • Mo metal molybdenum
  • the gates of the metal connector and the thin film transistor can be made of a metal molybdenum material; and the metal connector and the light shielding
  • the layers are the same material and are disposed in the same layer, the metal connecting member and the light shielding layer can be made of a metal molybdenum material; that is, the metal connecting member and the gate can be obtained simultaneously by one patterning process, or the metal connecting member and the light shielding can be obtained at the same time.
  • the layer greatly simplifies the production process and saves production costs.
  • an embodiment of the present disclosure further provides a display panel, as shown in FIG. 7, may include: an array substrate 701, which may be the above-described embodiment provided by an embodiment of the present disclosure; In the case of a liquid crystal display panel, the opposite substrate 702 is disposed opposite to the array substrate 701.
  • an embodiment of the present disclosure further provides a display device, which may include the above display panel provided according to an embodiment of the present disclosure.
  • the display device may be any product or component having a display function such as a mobile phone, a tablet computer, a notebook computer, a desktop computer, a television, a navigator, or the like.
  • the principle of the display device is similar to that of the display panel. Therefore, the implementation of the display device can be referred to the implementation of the above display panel, and the repeated description is omitted.
  • An embodiment of the present disclosure provides an array substrate, a display panel, and a display device.
  • the array substrate includes: a substrate substrate, and metal connectors, a first insulating layer, a signal line, and a second layer sequentially disposed on the substrate.
  • the insulating layer and the common electrode; the material of the metal connecting member is different from the material of the signal line; the signal line and the common electrode are electrically connected by the metal connecting member; and the contact resistance between the metal connecting member and the common electrode is smaller than the signal line and the common electrode Contact resistance between. Therefore, the electrical connection between the signal line and the common electrode is achieved by the arrangement of the metal connecting member; and, because the contact resistance between the metal connecting member and the common electrode is small, effective contact between the metal connecting member and the common electrode can be achieved.
  • the invention facilitates the transmission of the signal of the common electrode to the corresponding chip through the signal line, and effectively avoids the problem of poor signal transmission caused by the large contact resistance between the signal line and the common electrode.

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  • General Physics & Mathematics (AREA)
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)

Abstract

一种阵列基板、显示面板及显示装置，该阵列基板包括：衬底基板（10），以及在衬底基板（10）上依次设置的金属连接件（20）、第一绝缘层（30）、信号线（500）、第二绝缘层（40）和公共电极（300）；金属连接件（20）的材质与信号线（500）的材质相异；信号线（500）和公共电极（300）通过金属连接件（20）电连接；且金属连接件（20）与公共电极（300）之间的接触电阻，小于信号线（500）与公共电极（300）之间的接触电阻。因此，通过金属连接件（20）实现了信号线（500）与公共电极（300）的电连接；并且，因金属连接件（20）与公共电极（300）之间的接触电阻较小，可以实现金属连接件（20）与公共电极（300）之间的有效接触，有利于实现通过信号线（500）将公共电极（300）的信号传输至相应的芯片，有效避免了因信号线（500）与公共电极（300）之间的接触电阻较大而导致的信号传输不良的问题。

Description

一种阵列基板、显示面板及显示装置 技术领域
本发明的实施例涉及显示技术领域，尤指一种阵列基板、显示面板及显示装置。
背景技术
随着显示技术的飞速发展，触摸屏(Touch Screen Panel)已经逐渐遍及人们的生活中。目前，触摸屏按照组成结构可以分为：外挂式触摸屏(Add on Mode Touch Panel)、覆盖表面式触摸屏(On Cell Touch Panel)、以及内嵌式触摸屏(In Cell Touch Panel)。其中，外挂式触摸屏是将触摸屏与液晶显示屏(Liquid Crystal Display，LCD)分开生产，然后贴合到一起成为具有触摸功能的液晶显示屏，外挂式触摸屏存在制作成本较高、光透过率较低、模组较厚等缺点。而内嵌式触摸屏是将触摸屏的触控电极内嵌在液晶显示屏内部，可以减薄模组整体的厚度，又可以大大降低触摸屏的制作成本，受到各大面板厂家青睐。
源极和漏极然而，期望实现触控信号线与公共电极之间的有效接触，减少接触电阻，提高触摸屏对触控位置的检测精度。
发明内容
本公开的实施例提供了一种阵列基板、显示面板及显示装置，可以实现触控信号线与公共电极之间的有效接触，减少接触电阻，提高触摸屏对触控位置的检测精度。
本公开的实施例提供了一种阵列基板，包括：衬底基板，以及在所述衬底基板上依次设置的金属连接件、第一绝缘层、信号线、第二绝缘层和公共电极；所述金属连接件的材质与所述信号线的材质相异；其中，
所述信号线和所述公共电极通过所述金属连接件电连接；且所述金属连接 件与所述公共电极之间的接触电阻，小于所述信号线与所述公共电极之间的接触电阻。
在一种可选的实施方式中，在本公开的实施例提供的上述阵列基板中，还包括：设置于所述公共电极与所述衬底基板之间的薄膜晶体管；其中，
所述信号线与所述薄膜晶体管中的源极和漏极同材质且同层设置。
在一种可选的实施方式中，在本公开的实施例提供的上述阵列基板中，所述信号线包括叠层设置的至少两种金属材料。
在一种可选的实施方式中，在本公开的实施例提供的上述阵列基板中，所述信号线由两层金属钛材料和一层金属铝材料构成；且所述金属铝材料位于两层所述金属钛材料之间。
在一种可选的实施方式中，在本公开的实施例提供的上述阵列基板中，所述金属连接件与所述薄膜晶体管中的栅极同材质且同层设置。
在一种可选的实施方式中，阵列基板还包括过孔，用于形成金属连接件和公共电极的电连接，其中，第二绝缘层的厚度大于第一绝缘层的厚度，过孔包括穿过第一绝缘层的过孔第一部分和穿过第二绝缘层的过孔第二部分，过孔第一部分的截面尺寸大于过孔第二部分的截面尺寸。
在一种可选的实施方式中，在本公开的实施例提供的上述阵列基板中，所述薄膜晶体管为顶栅型薄膜晶体管或底栅型薄膜晶体管。
在一种可选的实施方式中，在本公开的实施例提供的上述阵列基板中，所述薄膜晶体管为顶栅型薄膜晶体管；
所述阵列基板还包括：设置于所述衬底基板与所述薄膜晶体管之间的遮光层；且所述遮光层在所述衬底基板上的正投影，覆盖所述薄膜晶体管中的有源层在所述衬底基板上的正投影；
所述金属连接件与所述遮光层同材质且同层设置。
在一种可选的实施方式中，所述遮光层在所述衬底基板上的正投影与薄膜晶体管中的有源层在衬底基板上的正投影完全重叠。
在一种可选的实施方式中，在本公开的实施例提供的上述阵列基板中，所述金属连接件包括金属钼材料。
在一种可选的实施方式中，在本公开的实施例提供的上述阵列基板中，所述公共电极为触控电极；所述信号线为触控信号线。
本公开的实施例还提供了一种显示面板，包括：如本公开的实施例提供的上述阵列基板。
本公开的实施例还提供了一种显示装置，包括：如本公开的实施例提供的上述显示面板。
附图说明
图1为现有技术中阵列基板的侧视图；
图2为本公开的实施例中提供的阵列基板的俯视图；
图3至图6分别为图2中所示的沿X-X’位置的阵列基板的侧视图；
图7为本公开的实施例中提供的显示面板的结构示意图。
具体实施方式
下面将结合附图，对本公开的实施例提供的一种阵列基板、显示面板及显示装置的具体实施方式进行详细地说明。需要说明的是，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
目前，在内嵌式触摸屏中，将触控信号线与触控电极直接电连接，以实现触控信号的传输。图1示出一种阵列基板的侧视图，触控信号线1位于绝缘层2之上，且与源极和漏极3同材质且同层设置，位于平坦层4之上的触控电极5，通过平坦层4中的过孔6与触控信号线1电连接。而通常，触控信号线是由金属钛(Ti)和金属铝(Al)叠层设置构成，即第一层为Ti，第二层为Al， 第三层为Ti，公共电极或触控电极5一般是由氧化铟锡材料(ITO)构成。在制作阵列基板的过程中，因Ti容易发生氧化，使得触控信号线的氧化的Ti层在与ITO接触时，会产生较大的接触电阻，影响触控信号的传输，从而影响触摸屏对触控位置的检测精度。
本公开的实施例提供了一种阵列基板，如图2所示的阵列基板的俯视图，100表示栅线，200表示数据线，300表示公共电极，且公共电极300可以面状的，也可以是块状的，400表示狭缝状的像素电极，但像素电极400并不限于此结构，500表示与公共电极300电连接的信号线，图中未示出公共电极300与信号线500的连接关系。
具体地，本公开的实施例提供的上述阵列基板，与图2所示的俯视图中沿X-X’位置的侧视图如图3至图6所示，可以包括：衬底基板10，以及在衬底基板10上依次设置的金属连接件20、第一绝缘层30、信号线500、第二绝缘层40和公共电极300；金属连接件20的材质与信号线500的材质可以不同；其中，
信号线500和公共电极300通过金属连接件20电连接；且金属连接件20与公共电极300之间的接触电阻，小于信号线500与公共电极300之间的接触电阻。
本公开的实施例提供的上述阵列基板，通过金属连接件20的设置，实现了信号线500与公共电极300之间的电连接；并且，因金属连接件20与公共电极300之间的接触电阻较小，可以实现金属连接件20与公共电极300之间的有效接触，有利于实现通过信号线500将公共电极300的信号传输至相应的芯片，并有效避免了因信号线500与公共电极300之间的接触电阻较大而导致的信号传输不良的问题。
在具体实施时，为了简化制作工艺，降低制作成本，在制作信号线500时，可以与阵列基板中薄膜晶体管的源极51和漏极51’同层设置且同材质，即通过一次构图工艺即可得到信号线500、源极和漏极。因此，在本公开的实施例提 供的上述阵列基板中，如图3至图6所示，还可以包括：设置于公共电极300与衬底基板10之间的薄膜晶体管50；其中，
信号线500与薄膜晶体管50中的源极51和漏极51’同材质且同层设置。
具体地，在制作信号线时，为了降低信号线与相应部件的接触电阻，实现信号线与相应部件的有效接触，便于信号的有效传输，通常，采用多种金属材料来制作信号线，并根据不同金属的功函数，来设计信号线的具体结构。因此，在本公开的实施例提供的上述阵列基板中，信号线可以包括叠层设置的至少两种金属材料。
进一步地，在信号线由两种金属材料构成时，在本公开的实施例提供的上述阵列基板中，信号线由两层金属钛材料和一层金属铝材料构成；且金属铝材料位于两层金属钛材料之间。
制作信号线时并不限于使用金属钛材料和金属铝材料，在其他实施例中，还可以使用其他符合实际需要的金属材料；并且，信号线还可以为两层结构，并不限于上述给出的三层结构，在此不作限定。
在具体实施时，在如图3至图6所示的阵列基板中，薄膜晶体管50可以为顶栅型薄膜晶体管，还可以为底栅型薄膜晶体管。具体地，在图3至图5的实施例中，薄膜晶体管为顶栅型，其结构由上至下依次为：源极51和漏极51’、第一绝缘层30、栅极52、栅绝缘层53和有源层54。在图6的实施例中，薄膜晶体管50为底栅型，其结构由上至下依次为：源极51和漏极51’、第一绝缘层30、有源层54、栅绝缘层53和栅极52。
具体地，不管薄膜晶体管为顶栅型，还是为底栅型，在本公开的实施例提供的上述阵列基板中，如图5和图6所示，金属连接件20可以与薄膜晶体管50中的栅极52同材质且同层设置。
具体地，当薄膜晶体管为顶栅型薄膜晶体管时；在本公开的实施例提供的上述阵列基板中，如图3至图5所示，阵列基板还可以包括：设置于衬底基板10与薄膜晶体管50之间的遮光层60；且遮光层60在衬底基板10上的正投影， 覆盖薄膜晶体管50中的有源层54在衬底基板10上的正投影，以避免背光进入到有源层54时，产生光生载流子而影响有源层54的活性。在一个实施例中，遮光层60在衬底基板10上的正投影可以与薄膜晶体管50中的有源层54在衬底基板10上的正投影完全重叠，如图3和图5所示。在另一实施例中，薄膜晶体管50中的有源层54在衬底基板10上的正投影完全落入遮光层60在衬底基板10上的正投影内，如图4所示。此外，在如图3和4所示的实施例中，为了简化制作工艺，减少制作成本，可以将金属连接件20与遮光层60同材质且同层设置。例如，可以通过一次构图工艺形成金属连接件20和遮光层60，从而减少构图和曝光次数，简化工艺降低成本。
在具体实施时，如图3至图6所示，在本公开的实施例提供的阵列基板中，为了实现公共电极300与金属连接件20的电连接，需要在金属连接件20所在层与公共电极300所在层之间的膜层设置过孔，而设置于金属连接件20所在层与公共电极300所在层之间的膜层数量至少为两个，且第二绝缘层40通常又被称为平坦层，用于为公共电极300提供平整的表面。平坦层的厚度一般较厚，这造成过孔较深，增加了过孔的制作难度，还有可能造成公共电极300与金属连接件20之间的接触不良。为了避免这些问题，结合图4所示的阵列基板的结构，可以将贯穿第二绝缘层40和第一绝缘层30的过孔第一部分71的直径，设置为大于贯穿栅绝缘层53的过孔第二部分72的直径，如图4所示，即设置为套孔结构，可以有效的避免公共电极300与金属连接件20之间的接触不良，并降低了制作难度。换句话说，在本公开的实施例中，设置过孔用于形成金属连接件20和公共电极300的电连接，其中，由于第二绝缘层40的厚度大于第一绝缘层30的厚度，过孔包括穿过第一绝缘层的过孔第一部分71和穿过第二绝缘层的过孔第二部分72，过孔第一部分71的截面尺寸大于过孔第二部分72的截面尺寸(如图4所示)。
在具体实施时，在本公开的实施例提供的上述阵列基板应用到内嵌式触摸屏时，通常是将面状的公共电极分割成多个规则排列的方块，形成块状电极， 此块状电极可以用作触控电极，当该阵列基板属于液晶显示面板中的阵列基板时，该块状电极还可以与像素电极形成电场，驱动液晶用于显示；因此，本公开的实施例提供的上述阵列基板中的信号线可以为触控信号线，用于将公共电极作为触控电极时接收到的触控信号传输至触控芯片中，实现触控的功能。
具体地，公共电极通常是由透明导电氧化物制作而成，例如氧化铟锡(ITO)，当然并不限于ITO；一般地，ITO与氧化的金属钛(Ti)之间的接触电阻较大，而ITO与金属钼(Mo)之间的接触电阻则较小；因此，在本公开的实施例提供的上述阵列基板中，金属连接件包括金属钼材料。
进一步地，在金属连接件与薄膜晶体管中的栅极同材质且同层设置时，可以使得金属连接件和薄膜晶体管中的栅极均由金属钼材料制作而成；而在金属连接件与遮光层同材质且同层设置时，可以使得金属连接件和遮光层均由金属钼材料制作而成；即通过一次构图工艺即可以同时得到金属连接件和栅极，或同时得到金属连接件和遮光层，大大简化了制作工艺，节约了制作成本。
基于同一发明构思，本公开的实施例还提供了一种显示面板，如图7所示，可以包括：阵列基板701，阵列基板701可以是如本公开的实施例提供的上述；当该显示面板为液晶显示面板时，还包括与阵列基板701相对而置的对向基板702。
基于同一发明构思，本公开的实施例还提供了一种显示装置，可以包括：如本公开的实施例提供的上述显示面板。该显示装置可以是手机、平板电脑、笔记本电脑、台式电脑、电视、导航仪等任何具有显示功能的产品或部件。由于该显示装置解决问题的原理与显示面板相似，因此该显示装置具体实施可参见上述显示面板的实施，重复之处不再赘述。
本公开的实施例提供了一种阵列基板、显示面板及显示装置，该阵列基板包括：衬底基板，以及在衬底基板上依次设置的金属连接件、第一绝缘层、信号线、第二绝缘层和公共电极；金属连接件的材质与信号线的材质相异；信号线和公共电极通过金属连接件电连接；且金属连接件与公共电极之间的接触电 阻，小于信号线与公共电极之间的接触电阻。因此，通过金属连接件的设置，实现了信号线与公共电极的电连接；并且，因金属连接件与公共电极之间的接触电阻较小，可以实现金属连接件与公共电极之间的有效接触，有利于实现通过信号线将公共电极的信号传输至相应的芯片中，并有效避免了因信号线与公共电极之间的接触电阻较大而导致的信号传输不良的问题。
显然，本领域的技术人员可以对本公开进行各种改动和变型而不脱离本公开的精神和范围。这样，倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (13)

  1. 一种阵列基板，包括：衬底基板，以及在所述衬底基板上依次设置的金属连接件、第一绝缘层、信号线、第二绝缘层和公共电极，第一绝缘层位于金属连接件和信号线之间，第二绝缘层位于信号线和公共电极之间；所述金属连接件的材质与所述信号线的材质相异；其中，
    所述信号线和所述公共电极通过所述金属连接件电连接；且所述金属连接件与所述公共电极之间的接触电阻，小于所述信号线与所述公共电极之间的接触电阻。
  2. 如权利要求1所述的阵列基板，还包括：设置于所述公共电极与所述衬底基板之间的薄膜晶体管；其中，
    所述信号线与所述薄膜晶体管中的源极和漏极同材质且同层设置。
  3. 如权利要求2所述的阵列基板，其中，所述信号线包括叠层设置的至少两种金属材料。
  4. 如权利要求3所述的阵列基板，其中，所述信号线由两层金属钛材料和一层金属铝材料构成；且所述金属铝材料位于两层金属钛材料之间。
  5. 如权利要求2所述的阵列基板，其中，所述金属连接件与所述薄膜晶体管中的栅极同材质且同层设置。
  6. 如权利要求1所述的阵列基板，还包括过孔，用于形成金属连接件和公共电极的电连接，其中，第二绝缘层的厚度大于第一绝缘层的厚度，过孔包括穿过第一绝缘层的过孔第一部分和穿过第二绝缘层的过孔第二部分，过孔第一部分的截面尺寸大于过孔第二部分的截面尺寸。
  7. 如权利要求2所述的阵列基板，其中，所述薄膜晶体管为顶栅型薄膜晶体管或底栅型薄膜晶体管。
  8. 如权利要求7所述的阵列基板，其中，所述薄膜晶体管为顶栅型薄膜晶体管；
    所述阵列基板还包括：设置于所述衬底基板与所述薄膜晶体管之间的遮光层；且所述遮光层在所述衬底基板上的正投影，覆盖所述薄膜晶体管中的有源层在所述衬底基板上的正投影；
    所述金属连接件与所述遮光层同材质且同层设置。
  9. 如权利要求7或8所述的阵列基板，其中，所述遮光层在所述衬底基板上的正投影与薄膜晶体管中的有源层在衬底基板上的正投影完全重叠。
  10. 如权利要求1-9任一项所述的阵列基板，其中，所述金属连接件包括金属钼材料。
  11. 如权利要求1-9任一项所述的阵列基板，其中，所述公共电极为触控电极；所述信号线为触控信号线。
  12. 一种显示面板，包括：如权利要求1-11任一项所述的阵列基板。
  13. 一种显示装置，包括：如权利要求12所述的显示面板。
PCT/CN2018/070097 2017-06-08 2018-01-03 一种阵列基板、显示面板及显示装置 WO2018223689A1 (zh)

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CN107589874B (zh) * 2017-10-23 2023-11-10 京东方科技集团股份有限公司 一种阵列基板及制备方法、触控显示面板和触控显示装置
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