CN107193422B - 一种阵列基板、显示面板及显示装置 - Google Patents

一种阵列基板、显示面板及显示装置 Download PDF

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CN107193422B
CN107193422B CN201710429457.8A CN201710429457A CN107193422B CN 107193422 B CN107193422 B CN 107193422B CN 201710429457 A CN201710429457 A CN 201710429457A CN 107193422 B CN107193422 B CN 107193422B
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electrode
signal wire
array substrate
layer
film transistor
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CN107193422A (zh
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刘弘
武新国
王凤国
史大为
王子峰
王文涛
杨璐
李峰
郭志轩
李元博
马波
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Ordos Yuansheng Optoelectronics Co Ltd
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Priority to PCT/CN2018/070097 priority patent/WO2018223689A1/zh
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    • HELECTRICITY
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    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/13338Input devices, e.g. touch panels
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/13439Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412Digitisers structurally integrated in a display
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416Control or interface arrangements specially adapted for digitisers
    • G06F3/04164Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Abstract

本发明公开了一种阵列基板、显示面板及显示装置,该阵列基板包括:衬底基板,以及在衬底基板上依次设置的金属电极、第一绝缘层、信号线、第二绝缘层和公共电极;金属电极的材质与信号线的材质相异;信号线和公共电极通过金属电极电连接;且金属电极与公共电极之间的接触电阻,小于信号线与公共电极之间的接触电阻。因此,通过金属电极实现了信号线与公共电极的电连接;并且,因金属电极与公共电极之间的接触电阻较小,可以实现金属电极与公共电极之间的有效接触,有利于实现通过信号线将公共电极的信号传输至相应的芯片,有效避免了因信号线与公共电极之间的接触电阻较大而导致的信号传输不良的问题。

Description

一种阵列基板、显示面板及显示装置
技术领域
本发明涉及显示技术领域,尤指一种阵列基板、显示面板及显示装置。
背景技术
随着显示技术的飞速发展,触摸屏(Touch Screen Panel)已经逐渐遍及人们的生活中。目前,触摸屏按照组成结构可以分为:外挂式触摸屏(Add on Mode Touch Panel)、覆盖表面式触摸屏(On Cell Touch Panel)、以及内嵌式触摸屏(In Cell Touch Panel)。其中,外挂式触摸屏是将触摸屏与液晶显示屏(Liquid Crystal Display,LCD)分开生产,然后贴合到一起成为具有触摸功能的液晶显示屏,外挂式触摸屏存在制作成本较高、光透过率较低、模组较厚等缺点。而内嵌式触摸屏是将触摸屏的触控电极内嵌在液晶显示屏内部,可以减薄模组整体的厚度,又可以大大降低触摸屏的制作成本,受到各大面板厂家青睐。
目前,在内嵌式触摸屏中,将触控信号线与触控电极直接电连接,以实现触控信号的传输;如图1所示的阵列基板的侧视图,触控信号线1位于绝缘层2之上,且与源漏极3同材质且同层设置,位于平坦层4之上的触控电极5,通过平坦层4中的过孔6与触控信号线1电连接。而通常,触控信号线是由金属钛(Ti)和金属铝(Al)叠层设置构成,即第一层为Ti,第二层为Al,第三层为Ti,公共电极一般是由氧化铟锡材料(ITO)构成。在制作阵列基板的过程中,因Ti容易发生氧化,使得氧化的Ti层在与ITO接触时,会产生较大的接触电阻,影响触控信号的传输,从而影响触摸屏对触控位置的检测精度。
基于此,如何实现触控信号线与公共电极之间的有效接触,减少接触电阻,提高触摸屏对触控位置的检测精度,是本领域技术人员亟待解决的技术问题。
发明内容
本发明实施例提供了一种阵列基板、显示面板及显示装置,用以解决如何实现触控信号线与公共电极之间的有效接触,减少接触电阻,提高触摸屏对触控位置的检测精度。
本发明实施例提供了一种阵列基板,包括:衬底基板,以及在所述衬底基板上依次设置的金属电极、第一绝缘层、信号线、第二绝缘层和公共电极;所述金属电极的材质与所述信号线的材质相异;其中,
所述信号线和所述公共电极通过所述金属电极电连接;且所述金属电极与所述公共电极之间的接触电阻,小于所述信号线与所述公共电极之间的接触电阻。
在一种可能的实施方式中,在本发明实施例提供的上述阵列基板中,还包括:设置于所述公共电极与所述衬底基板之间的薄膜晶体管;其中,
所述信号线与所述薄膜晶体管中的源漏极同材质且同层设置。
在一种可能的实施方式中,在本发明实施例提供的上述阵列基板中,所述信号线由叠层设置的至少两种金属材料构成。
在一种可能的实施方式中,在本发明实施例提供的上述阵列基板中,所述信号线由两层金属钛材料和一层金属铝材料构成;且所述金属铝材料位于两层所述金属钛材料之间。
在一种可能的实施方式中,在本发明实施例提供的上述阵列基板中,所述金属电极与所述薄膜晶体管中的栅极同材质且同层设置。
在一种可能的实施方式中,在本发明实施例提供的上述阵列基板中,所述薄膜晶体管为顶栅型薄膜晶体管或底栅型薄膜晶体管。
在一种可能的实施方式中,在本发明实施例提供的上述阵列基板中,所述薄膜晶体管为顶栅型薄膜晶体管;
所述阵列基板还包括:设置于所述衬底基板与所述薄膜晶体管之间的遮光层;且所述遮光层在所述衬底基板上的正投影,覆盖所述薄膜晶体管中的有源层在所述衬底基板上的正投影;
所述金属电极与所述遮光层同材质且同层设置。
在一种可能的实施方式中,在本发明实施例提供的上述阵列基板中,所述金属电极由金属钼材料构成。
在一种可能的实施方式中,在本发明实施例提供的上述阵列基板中,所述公共电极为触控电极;所述信号线为触控信号线。
本发明实施例还提供了一种显示面板,包括:如本发明实施例提供的上述阵列基板。
本发明实施例还提供了一种显示装置,包括:如本发明实施例提供的上述显示面板。
本发明有益效果如下:
本发明实施例提供的一种阵列基板、显示面板及显示装置,该阵列基板包括:衬底基板,以及在衬底基板上依次设置的金属电极、第一绝缘层、信号线、第二绝缘层和公共电极;金属电极的材质与信号线的材质相异;信号线和公共电极通过金属电极电连接;且金属电极与公共电极之间的接触电阻,小于信号线与公共电极之间的接触电阻。因此,通过金属电极的设置,实现了信号线与公共电极的电连接;并且,因金属电极与公共电极之间的接触电阻较小,可以实现金属电极与公共电极之间的有效接触,有利于实现通过信号线将公共电极的信号传输至相应的芯片,并有效避免了因信号线与公共电极之间的接触电阻较大而导致的信号传输不良的问题。
附图说明
图1为现有技术中阵列基板的侧视图;
图2为本发明实施例中提供的阵列基板的俯视图;
图3至图6分别为图2中所示的沿X-X’位置的阵列基板的侧视图;
图7为本发明实施例中提供的显示面板的结构示意图。
具体实施方式
下面将结合附图,对本发明实施例提供的一种阵列基板、显示面板及显示装置的具体实施方式进行详细地说明。需要说明的是,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
本发明实施例提供了一种阵列基板,如图2所示的阵列基板的俯视图,100表示栅线,200表示数据线,300表示公共电极,且公共电极300可以面状的,也可以是块状的,400表示狭缝状的像素电极,但像素电极400并不限于此结构,500表示与公共电极300电连接的信号线,图中未示出公共电极300与信号线500的连接关系。
具体地,本发明实施例提供的上述阵列基板,与图2所示的俯视图中沿X-X’位置的侧视图如图3至图6所示,可以包括:衬底基板10,以及在衬底基板10上依次设置的金属电极20、第一绝缘层30、信号线500、第二绝缘层40和公共电极300;金属电极20的材质与信号线500的材质相异;其中,
信号线500和公共电极300通过金属电极20电连接;且金属电极20与公共电极300之间的接触电阻,小于信号线500与公共电极300之间的接触电阻。
本发明实施例提供的上述阵列基板,通过金属电极20的设置,实现了信号线500与公共电极300之间的电连接;并且,因金属电极20与公共电极300之间的接触电阻较小,可以实现金属电极20与公共电极300之间的有效接触,有利于实现通过信号线500将公共电极300的信号传输至相应的芯片,并有效避免了因信号线500与公共电极300之间的接触电阻较大而导致的信号传输不良的问题。
在具体实施时,为了简化制作工艺,降低制作成本,在制作信号线500时,可以与阵列基板中薄膜晶体管的源漏极同层设置且同材质,即通过一次构图工艺即可得到信号线500和源漏极;因此,在本发明实施例提供的上述阵列基板中,如图3至图6所示,还可以包括:设置于公共电极300与衬底基板10之间的薄膜晶体管50(虚线框内);其中,
信号线500与薄膜晶体管50中的源漏极51同材质且同层设置。
具体地,在制作信号线时,为了降低信号线与相应部件的接触电阻,实现信号线与相应部件的有效接触,便于信号的有效传输,通常,采用多种金属材料来制作信号线,并根据不同金属的功函数,来设计信号线的具体结构;因此,在本发明实施例提供的上述阵列基板中,信号线一般由叠层设置的至少两种金属材料构成。
进一步地,在信号线由两种金属材料构成时,在本发明实施例提供的上述阵列基板中,信号线由两层金属钛材料和一层金属铝材料构成;且金属铝材料位于两层金属钛材料之间。
当然,制作信号线时并不限于使用金属钛材料和金属铝材料,还可以使用其他符合实际需要的金属材料;并且,信号线还可以为两层结构,并不限于上述给出的三层结构,在此不作限定。
在具体实施时,在如图3至图6所示的阵列基板中,薄膜晶体管50可以为顶栅型薄膜晶体管,还可以为底栅型薄膜晶体管;具体地,在图3至图5中,薄膜晶体管为顶栅型,其结构由上至下依次为:源漏极51、第一绝缘层30、栅极52、栅绝缘层53和有源层54;在图6中,薄膜晶体管50为底栅型,其结构由上至下依次为:源漏极51、第一绝缘层30、有源层54、栅绝缘层53和栅极52。
具体地,不管薄膜晶体管为顶栅型,还是为底栅型,在本发明实施例提供的上述阵列基板中,如图5和图6所示,金属电极20可以与薄膜晶体管50中的栅极52同材质且同层设置。
具体地,当薄膜晶体管为顶栅型薄膜晶体管时;在本发明实施例提供的上述阵列基板中,如图3至图5所示,阵列基板还可以包括:设置于衬底基板10与薄膜晶体管50之间的遮光层60;且遮光层60在衬底基板10上的正投影,覆盖薄膜晶体管50中的有源层54在衬底基板10上的正投影;以避免背光进入到有源层54时,产生光生载流子而影响有源层54的活性;当然,遮光层60在衬底基板10上的正投影可以与薄膜晶体管50中的有源层54在衬底基板10上的正投影完全重叠,如图3和图5所示;还可以使得薄膜晶体管50中的有源层54在衬底基板10上的正投影,完全落入遮光层60在衬底基板10上的正投影内,如图4所示;并且,为了简化制作工艺,减少制作成本,还可以将金属电极20与遮光层60同材质且同层设置,如图3和图4所示。
在具体实施时,如图3至图6所示,在本发明实施例提供的上述阵列基板中,若要实现公共电极300与金属电极20的电连接,需要在金属电极20所在层与公共电极300所在层之间的膜层设置过孔,而处于金属电极20所在层与公共电极300所在层之间的膜层设置数量至少为两个,且第二绝缘层40通常又被称为平坦层,用于为公共电极300提供平整的表面,所以厚度制作的一般较厚,造成过孔较深,不仅增加了制作难度,还有可能造成公共电极300与金属电极20之间的接触不良;因此,为了避免这些问题,结合图3所示的阵列基板的结构,可以将贯穿第二绝缘层40和第一绝缘层30的第一过孔71的直径,设置为大于贯穿栅绝缘层53的第二过孔72的直径,如图4所示,即设置为套孔结构,可以有效的避免公共电极300与金属电极20之间的接触不良,并降低了制作难度。
在具体实施时,在本发明实施例提供的上述阵列基板应用到内嵌式触摸屏时,通常是将面状的公共电极分割成多个规则排列的方块,形成块状电极,此块状电极可以用作触控电极,当该阵列基板属于液晶显示面板中的阵列基板时,该块状电极还可以与像素电极形成电场,驱动液晶用于显示;因此,本发明实施例提供的上述阵列基板中的信号线可以为触控信号线,用于将公共电极作为触控电极时接收到的触控信号传输至触控芯片中,实现触控的功能。
具体地,公共电极通常是由透明导电氧化物制作而成,例如氧化铟锡(ITO),当然并不限于ITO;一般地,ITO与氧化的金属钛(Ti)之间的接触电阻较大,而ITO与金属钼(Mo)之间的接触电阻则较小;因此,在本发明实施例提供的上述阵列基板中,金属电极由金属钼材料构成。
进一步地,在金属电极与薄膜晶体管中的栅极同材质且同层设置时,可以使得金属电极和薄膜晶体管中的栅极均由金属钼材料制作而成;而在金属电极与遮光层同材质且同层设置时,可以使得金属电极和遮光层均由金属钼材料制作而成;即通过一次构图工艺即可以同时得到金属电极和栅极,或同时得到金属电极和遮光层,大大简化了制作工艺,节约了制作成本。
基于同一发明构思,本发明实施例还提供了一种显示面板,如图7所示,可以包括:如本发明实施例提供的上述阵列基板701;当该显示面板为液晶显示面板时,还包括与阵列基板701相对而置的对向基板702。
基于同一发明构思,本发明实施例还提供了一种显示装置,可以包括:如本发明实施例提供的上述显示面板。该显示装置可以是手机、平板电脑、笔记本电脑、台式电脑、电视、导航仪等任何具有显示功能的产品或部件。由于该显示装置解决问题的原理与显示面板相似,因此该显示装置具体实施可参见上述显示面板的实施,重复之处不再赘述。
本发明实施例提供了一种阵列基板、显示面板及显示装置,该阵列基板包括:衬底基板,以及在衬底基板上依次设置的金属电极、第一绝缘层、信号线、第二绝缘层和公共电极;金属电极的材质与信号线的材质相异;信号线和公共电极通过金属电极电连接;且金属电极与公共电极之间的接触电阻,小于信号线与公共电极之间的接触电阻。因此,通过金属电极的设置,实现了信号线与公共电极的电连接;并且,因金属电极与公共电极之间的接触电阻较小,可以实现金属电极与公共电极之间的有效接触,有利于实现通过信号线将公共电极的信号传输至相应的芯片中,并有效避免了因信号线与公共电极之间的接触电阻较大而导致的信号传输不良的问题。
显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。

Claims (8)

1.一种阵列基板,其特征在于,包括:衬底基板,以及在所述衬底基板上依次设置的金属电极、第一绝缘层、信号线、第二绝缘层和公共电极;所述金属电极的材质与所述信号线的材质相异;其中,
所述信号线和所述公共电极通过所述金属电极电连接;且所述金属电极与所述公共电极之间的接触电阻,小于所述信号线与所述公共电极之间的接触电阻;
所述阵列基板还包括:薄膜晶体管;且所述薄膜晶体管为顶栅型薄膜晶体管;
所述阵列基板还包括:设置于所述衬底基板与所述薄膜晶体管之间的遮光层;且所述遮光层在所述衬底基板上的正投影,覆盖所述薄膜晶体管中的有源层在所述衬底基板上的正投影;
所述金属电极与所述遮光层同材质且同层设置。
2.如权利要求1所述的阵列基板,其特征在于,还包括:所述薄膜晶体管设置于所述公共电极与所述衬底基板之间;其中,
所述信号线与所述薄膜晶体管中的源漏极同材质且同层设置。
3.如权利要求2所述的阵列基板,其特征在于,所述信号线由叠层设置的至少两种金属材料构成。
4.如权利要求3所述的阵列基板,其特征在于,所述信号线由两层金属钛材料和一层金属铝材料构成;且所述金属铝材料位于两层所述金属钛材料之间。
5.如权利要求1-4任一项所述的阵列基板,其特征在于,所述金属电极由金属钼材料构成。
6.如权利要求1-4任一项所述的阵列基板,其特征在于,所述公共电极为触控电极;所述信号线为触控信号线。
7.一种显示面板,其特征在于,包括:如权利要求1-6任一项所述的阵列基板。
8.一种显示装置,其特征在于,包括:如权利要求7所述的显示面板。
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