CN108169947B - 阵列基板及其制造方法、触控显示装置 - Google Patents

阵列基板及其制造方法、触控显示装置 Download PDF

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Publication number
CN108169947B
CN108169947B CN201810094721.1A CN201810094721A CN108169947B CN 108169947 B CN108169947 B CN 108169947B CN 201810094721 A CN201810094721 A CN 201810094721A CN 108169947 B CN108169947 B CN 108169947B
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touch
thin film
substrate
outgoing line
array substrate
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CN108169947A (zh
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李云泽
杨妮
谭倩
董中飞
王小元
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BOE Technology Group Co Ltd
Chongqing BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Chongqing BOE Optoelectronics Technology Co Ltd
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Priority to US16/118,252 priority patent/US11119373B2/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0292—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using a specific configuration of the conducting means connecting the protective devices, e.g. ESD buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04107—Shielding in digitiser, i.e. guard or shielding arrangements, mostly for capacitive touchscreens, e.g. driven shields, driven grounds

Abstract

本发明提供了一种阵列基板及其制造方法、触控显示装置，以提高触控与显示驱动集成显示装置中阵列基板的薄膜晶体管的关态电流。其中该阵列基板包括：衬底，设置于衬底上的多个薄膜晶体管，设置于多个薄膜晶体管远离衬底一侧的触控走线层；其中薄膜晶体管包括有源层，有源层包括沟道图案，触控走线层包括多条触控线和多个遮光单元，遮光单元与沟道图案在衬底上的正投影至少部分重叠。上述阵列基板应用于触控与显示驱动集成的显示装置中。

Description

阵列基板及其制造方法、触控显示装置
技术领域
本发明涉及显示装置制造技术领域，尤其涉及一种阵列基板及其制造方法、触控显示装置。
背景技术
薄膜晶体管液晶显示器(Thin Film Transistor-Liquid Crystal Display，简称TFT-LCD)是当前主流的一类显示器，触控与显示驱动集成(Touch and Display DriverIntegrate，简称TDDI)显示器作为其中一类备受关注。在触控与显示驱动集成显示器中，包括多条触控线的触控走线层(Touch Pattern Metal，简称TPM)集成在阵列基板上，以同时实现显示和触控的功能。
发明内容
对于触控与显示驱动集成显示器，薄膜晶体管作为其基本组成部分，其开关特性的稳定性对于显示器的正常工作是十分重要的。薄膜晶体管的开启电流Ion的大小决定了触控与显示驱动集成显示器中像素存储电容是否可以在有限的充电时间内完成充电，从而达到正常显示需要的工作电压。而薄膜晶体管的关态电流Ioff则决定了像素电压是否可以在一帧的扫描时间内保持住正常显示需要的工作电压。可见，关态电流Ioff过大会导致像素电压损失过快或者写入其他错误的信号，进而导致显示画面出现污渍(一种显示亮度不均的现象，视觉感觉像有污渍)、残像、串扰等不良，因此，减小薄膜晶体管的关态电流Ioff对于改善触控与显示驱动集成显示器显示画面质量有十分重要的意义。
本发明实施例提供一种阵列基板及其制造方法、触控显示装置，针对导致薄膜晶体管关态电流Ioff增大的外在原因，对阵列基板的内部结构进行改进，以提高薄膜晶体管的关态电流Ioff。
为达到上述目的，本发明实施例采用如下技术方案：
第一方面，本发明实施例提供了一种阵列基板，该阵列基板包括：衬底，设置于所述衬底上的多个薄膜晶体管，设置于所述多个薄膜晶体管远离所述衬底一侧的触控走线层；其中，所述薄膜晶体管包括有源层，所述有源层包括沟道图案，所述触控走线层包括多条触控线和多个遮光单元，所述遮光单元与所述沟道图案在所述衬底上的正投影至少部分重叠。
在上述阵列基板中，通过在薄膜晶体管的有源层之上设置遮光单元，且遮光单元与有源层的沟道图案至少部分地交叠，使得遮光单元能够遮蔽照射在有源层的沟道图案上的光线，从而减轻了由于光线照射沟道图案产生光生载流子所引起的薄膜晶体管关态电流Ioff增大的程度，有效降低了关态电流Ioff，增强了薄膜晶体管特性的稳定性，有助于改善由于关态电流Ioff过大所产生污渍、串扰、残像等不良。并且，所设置的遮光单元与触控线属于同一膜层：触控走线层，因此遮光单元的制作步骤可兼容于触控线的制作步骤中，无需额外增加用于制作遮光单元的工艺步骤，从而上述技术方案实现了在不增加工艺步骤的前提下，降低薄膜晶体管的关态电流Ioff的效果。
第二方面，本发明实施例提供了一种阵列基板的制造方法，该制造方法包括以下步骤：提供衬底，在所述衬底上制作多个薄膜晶体管；其中，所述薄膜晶体管包括有源层，所述有源层包括沟道图案。在所述多个薄膜晶体管远离所述衬底的一侧制作触控走线层；其中，所述触控走线层包括多条触控线和多个遮光单元，所述遮光单元与所述沟道图案在所述衬底上的正投影至少部分重叠。
上述阵列基板的制造方法所能产生的有益效果与第一方面所提供的阵列基板的有效果相同，此处不再赘述。
第三方面，本发明实施例提供了一种触控显示装置，所述触控显示装置包括如第一方面所述的阵列基板。
上述触控显示装置所能产生的有益效果与第一方面所提供的阵列基板的有效果相同，此处不再赘述。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1为现有技术中薄膜晶体管的截面结构图；
图2为薄膜晶体管的有源层受到光照的示意图；
图3为薄膜晶体管在暗态状态下和曝光状态下的关态电流Ioff的曲线图；
图4为薄膜晶体管上方膜层受到隔垫物摩擦的示意图；
图5为薄膜晶体管上方在有隔垫物摩擦时和无隔垫物摩擦时的关态电流Ioff的曲线图；
图6为现有技术中常规触控与显示驱动集成显示装置的阵列基板的截面结构图；
图7为现有技术中常规触控与显示驱动集成显示装置的阵列基板中触控线的布置架构的平面图；
图8为本发明实施例一所提供的阵列基板的平面结构图；
图9为图8沿虚线aa′的截面结构图；
图10为本发明实施例二所提供的阵列基板的平面结构图；
图11为图10沿虚线bb′的截面结构图；
图12为图10沿虚线cc′的截面结构图；
图13为图10沿虚线dd′的截面结构图；
图14为本发明实施例二所提供的阵列基板的布置架构的平面图。
附图标记说明：
1-衬底； 2-栅极；
3-栅极绝缘层； 4-有源层；
5-源极； 6-漏极；
7-钝化层； 8-数据线；
9-隔垫物； 10-彩膜基板；
11-栅线； 12-像素电极；
13-遮光单元； 14-触控线；
15-第一钝化层； 16-第二钝化层；
17-公共电极； 18-过孔；
19-公共电极线； 20-触控与显示驱动集成芯片；
21-第一引出线； 22-第二引出线；
23-接地线。
具体实施方式
正如背景技术所述，现有技术中触控与显示驱动集成显示器的阵列基板中的薄膜晶体管的关态电流Ioff过大，会导致显示画面出现污渍、残像、串扰等不良，本发明的发明人经研究发现，引起薄膜晶体管关态电流Ioff增大的原因，除了薄膜晶体管自身的内在因素的影响外，还存在如下外在因素的影响：
(1)光照。如图1和图2所示，现有技术中薄膜晶体管的有源层4的沟道图案上方的钝化层7等膜层均为透明膜层，这相当于有源层4的沟道图案裸露，斜入射或反射的光线照射在沟道图案上，会产生光生载流子，导致薄膜晶体管的关态电流Ioff增大。请参见图3，曝光状态下的关态电流Ioff明显高于暗态状态下的关态电流Ioff。
需要说明的是，本发明实施例中所述的“沟道图案”指的是，薄膜晶体管在外加电场的作用下，用于导通源极和漏极的有源层区域。
(2)隔垫物摩擦。如图4所示，在很多类型的显示器中，彩膜(Color Filter，简称CF)基板10上的隔垫物9(Photo Spacer，简称PS)顶在阵列基板中薄膜晶体管所在位置处，在外力作用下隔垫物9与薄膜晶体管上的膜层(如图4中的钝化层7)发生摩擦产生静电荷，静电荷无法排除而不断积累，从而在隔垫物9与有源层4之间形成内电场，导致薄膜晶体管的有源层4与钝化层7相接触的界面产生静电荷，导致薄膜晶体管的关态电流Ioff增大。请参见图5，薄膜晶体管上方有隔垫物摩擦产生静电荷时，关态电流Ioff明显高于无隔垫物摩擦产生静电荷时的关态电流Ioff。
基于上述研究发现，本发明的发明人提出如下技术方案：
(1)针对如上所述的光照因素造成薄膜晶体管关态电流Ioff增大的问题，可在薄膜晶体管的有源层的沟道图案上方设置遮光单元来遮挡沟道图案，避免沟道图案产生光生载流子，从而达到减小薄膜晶体管关态电流Ioff的效果。
(2)基于上述第1点的所提供的改进方案，针对如上所述的隔垫物摩擦产生静电荷引起薄膜晶体管关态电流Ioff增大的问题，可通过设置引出线，连接所设置的遮光单元，并将引出线接地，以将隔垫物摩擦薄膜晶体管上方膜层所产生的静电荷导出，避免静电荷的积累，达到减小薄膜晶体管关态电流Ioff的效果。
(3)由于当前触控与显示驱动集成显示装置的阵列基板中包括触控走线层，因此基于上述第1点所提供的改进方案，可将遮光单元与触控走线层的触控线在同一道掩膜工序下形成，从而实现了在不增加掩膜工序的前提下，减小薄膜晶体管关态电流Ioff的效果。进一步的，对于上述第2点所提供的改进方案，可将遮光单元和引出线与触控线在同一道掩膜工序下形成，从而可实现在不增加掩膜工序的前提下，进一步减小薄膜晶体管关态电流Ioff的效果。
以上是本发明的基本构思，为使本发明的上述目的、特征和优点能够更加明显易懂，下面将结合附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动的前提下所获得的所有其它实施例，均属于本发明保护的范围。
实施例一
本实施例所提供的技术方案适用于现有技术中触控与显示驱动集成显示装置的阵列基板。下面首先对现有技术中常规触控与显示驱动集成显示装置的阵列基板的结构进行简单介绍。
如图6所示，现有技术中常规触控与显示驱动集成显示装置的阵列基板，按制备顺序依次包括：栅极金属层(包括栅极和栅线11)、栅极绝缘层3、有源层4、像素电极层(包括像素电极)、源漏金属层(包括源极5、漏极6和数据线8)、第一钝化层15、触控走线层(包括触控线14)和第二钝化层16。
如图7所示，触控走线层所包括的每根触控线14对应一个公共电极17，且每根触控线14与对应的公共电极17通过过孔18连接，各触控线14与公共电极线19相连，且各触控线14连接至触控与显示驱动集成芯片20。通过触控与显示驱动集成芯片20对公共电极17进行分时复用，实现显示和触控功能。其中，对于触控功能的实现，当显示装置的某位置被触摸后，对应的公共电极17形成感应信号，感应信号由相应的过孔18经相应的触控线14传输至触控与显示驱动集成芯片20，触控与显示驱动集成芯片20根据该感应信号进行定位计算，实现触控功能。
基于上述触控与显示驱动集成显示装置的阵列基板，本实施例提供如下技术方案：
本实施例提供了一种阵列基板，如图8和图9所示，该阵列基板包括：衬底1，设置于衬底1上的多个薄膜晶体管，设置于多个薄膜晶体管远离衬底1一侧的触控走线层。其中，薄膜晶体管包括有源层4，有源层4包括沟道图案；触控走线层包括多条触控线14和多个遮光单元13。遮光单元13与有源层4的沟道图案在衬底1上的正投影至少部分重叠，从而遮光单元13能够对照射到有源层4的沟道图案上的光线起到遮挡的作用，有效地减少了沟道图案由于光照产生的光生载流子，降低了薄膜晶体管的关态电流Ioff。并且，遮光单元13与触控线14属于同一膜层：触控走线层，也就是说，二者可形成于同一道掩膜工序下，从而实现了在不额外增加用于制备遮光单元13的工艺步骤的前提下，降低薄膜晶体管的关态电流Ioff。
本实施例中，遮光单元13和触控线14之间需电性绝缘，以避免遮光单元13对触控线14上所传输的信号产生干扰。
由于遮光单元13与触控线14形成于同一道掩膜工序下，因此二者的制备材料相同。遮光单元13的制备材料优选遮光性能好的材料，如镍、铬等金属材料。
基于上述技术方案，为了进一步增强遮光单元13对沟道图案的遮挡作用，请继续参见图8，可使阵列基板的每个薄膜晶体管的有源层4均对应一个遮光单元13。并且，遮光单元13最好能够完全遮挡有源层4裸露的整个沟道图案，以最大限度的避免光生载流子的产生。
基于本实施例所提供的阵列基板，本实施例还提供一种用于制造上述阵列基板的制造方法，请再次参见图9，该制造方法包括以下步骤：
S1：提供衬底1，在衬底1上制作多个薄膜晶体管。其中，该薄膜晶体管包括有源层4，该有源层4包括沟道图案。
S2：在多个薄膜晶体管远离衬底1的一侧制作触控走线层。其中，该触控走线层包括多条触控线14和多个遮光单元13，该遮光单元13与有源层4的沟道图案在衬底1上的正投影至少部分重叠。
这样既能利用遮光单元13遮挡照射在有源层4的沟道区域上的光线，实现降低TFT的关态电流Ioff的效果，又将遮光单元13的制备兼容于触控线14的制备工序中，不需要额外增加用于制备遮光单元13的工艺步骤。
实施例二
本实施例对实施例一所提供的技术方案提出进一步的改进，具体方案如下：
请参见图10～图13，作为一种可能的设计，阵列基板还包括：沿第一方向的多条栅线11，及沿第二方向的多条数据线8。其中，第一方向与第二方向相互垂直。阵列基板的多个薄膜晶体管呈矩阵式布置，布置的行方向为第一方向，布置的列方向为第二方向。阵列基板的多条触控线14沿第二方向延伸。
上述阵列基板的触控走线层除多条触控线14外，还包括：多条第一引出线21，及至少一条第二引出线22。其中，第一引出线21沿第一方向延伸，用于将一行薄膜晶体管所对应的遮光单元13中的至少两个电连接。第二引出线22沿第二方向延伸，用于与至少一条第一引出线21电连接，且第二引出线22接地。
利用这样的结构，当顶在薄膜晶体管上方膜层上的隔垫物摩擦产生静电荷时，静电荷能够积聚在遮光单元13上，然后通过第二引出线22和第一引出线21导出，从而避免了隔垫物摩擦引起薄膜晶体管产生静电荷而导致的薄膜晶体管关态电流Ioff增大的问题。
另外，第一引出线21、第二引出线22、遮光单元13和触控线14属于同一膜层，也就是说，它们同属于触控走线层，这样第一引出线21、第二引出线22和遮光单元13制备就能够兼容于触控线14的制备工艺过程中，不会引起工艺步骤的增加。
在本实施例中，可将第二引出线22尽量设置于像素开口区域以外，以避免其对像素开口率产生影响。如：可使第二引出线22与数据线8在衬底1上的正投影无交叠，也就是说，将第二引出线22设置于数据线8的旁侧而非上方，这样可避免二者产生交叠，从而减少二者之间产生寄生电容。
相类似的，可将第一引出线21尽量设置于像素开口区域以外，以避免其对像素开口率产生影响。如：可使第一引出线21与栅线11在衬底1上的正投影无交叠，也就是说，将第一引出线21设置于栅线11的旁侧而非上方，这样可避免二者产生交叠，从而减少二者之间产生寄生电容。
为避免第一引出线21与触控线14发生交叉，作为一种可能的设计，可使每相邻两条触控线14之间包括至少一条第二引出线22，这样处于相邻两条触控线14之间的各第一引出线21便能够与处于对应的相邻两条触控线14之间的第二引出线22相连以实现接地，从而有效避免了第一引出线21与触控线14发生交叉。
在本实施例所提供的技术方案中，由于第一引出线21和第二引出线22的作用为将隔垫物摩擦所产生的静电荷由遮光单元13导出，因此在设计第一引出线21和第二引出线22时，仅需考虑二者的连续性，以保证静电荷能够顺利导出即可，无需考虑损耗、串扰的因素，因此第一引出线21和第二引出线22的线宽可任意设置，最好设置的较窄，这样可避免对像素开口率造成影响。
请参见图14，在本实施例所提供的技术方案中，为实现第二引出线22的接地，可将第二引出线22与接地线23(英文名称为：GND)相连。通常情况下，阵列基板上的接地线23形成于包括栅极和栅线11的图案的栅极金属层中，也就是说，第二引出线22与接地线23属于不同膜层，因此可通过过孔18实现二者的连接。进一步的，请继续参见图14可将第二引出线22的两端分别与阵列基板两端的两条接地线23相连，这样有利于静电荷的快速导出。
基于本实施例所提供的阵列基板，本实施例提供一种用于制造上述阵列基板的制造方法，请再次参见图10～图13，该制造方法在实施例一所提供的制造方法基础上，在制作触控走线层的工艺步骤中，采用同一道光刻工序，在制作遮光单元13和触控线14的同时，制作多条第一引出线21和至少一条第二引出线22。第一引出线21和第二引出线22的设置方式和作用等特征可参见本实施例的上面对第一引出线21和第二引出线22的相关描述，此处不再赘述。
通过上述制造方法，既能利用遮光单元13遮挡照射在有源层4的沟道图案上的光线，又能利用第一引出线21和第二引出线22将隔垫物摩擦产生的静电荷导出，实现降低薄膜晶体管的关态电流Ioff的效果，同时还能将遮光单元13、第一引出线21和第二引出线22的制备兼容于触控线14的制备工序中，不需要额外增加用于制备遮光单元13、第一引出线21和第二引出线22的工艺步骤。
实施例三
基于实施例一和二所提供的阵列基板，本实施例提供了一种触控显示装置，该显示装置包括如实施例一和二中任一技术方案所述的阵列基板。
由于实施例一和二中所提供的阵列基板中薄膜晶体管的关态电流Ioff较现有技术得到减小，因此本实施例中的触控显示装置的显示画面质量较高。
需要说明的是，本实施例中的触控显示装置可以为液晶面板、电子纸、有机发光二极管(Organic Light-Emitting Diode，简称OLED)面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何采用薄膜晶体管驱动的具有显示功能的产品或部件。
以上所述仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。

Claims (4)

1.一种阵列基板，其特征在于，所述阵列基板包括：衬底，设置于所述衬底上的多个薄膜晶体管，沿第一方向延伸的多条栅线，及沿第二方向延伸的多条数据线；设置于所述多个薄膜晶体管远离所述衬底一侧的触控走线层；其中，
所述多个薄膜晶体管呈矩阵式布置，布置的行方向为所述第一方向，布置的列方向为所述第二方向；所述第一方向与所述第二方向交叉设置；所述薄膜晶体管包括有源层，所述有源层包括沟道图案；
所述触控走线层包括多条触控线、多个遮光单元、多条第一引出线和至少一条第二引出线；所述多条触控线沿所述第二方向延伸；所述遮光单元与所述沟道图案在所述衬底上的正投影至少部分重叠；所述阵列基板的每个薄膜晶体管的有源层均对应一个所述遮光单元；所述第一引出线沿所述第一方向延伸，用于将一行所述薄膜晶体管所对应的所述遮光单元中的至少两个电连接；所述第一引出线与所述栅线在所述衬底上的正投影无交叠；所述第二引出线仅沿所述第二方向延伸，用于与至少一条所述第一引出线电连接，且所述第二引出线与接地线电连接；所述第二引出线与所述数据线在所述衬底上的正投影无交叠；
每相邻两条所述触控线之间包括至少一条所述第二引出线，所述第一引出线与所述触控线无交叉。
2.根据权利要求1所述的阵列基板，其特征在于，所述接地线与所述多条栅线同层设置；所述第二引出线通过过孔与所述接地线电连接。
3.一种阵列基板的制造方法，其特征在于，所述制造方法包括以下步骤：
提供衬底，在所述衬底上制作多条栅线、多个薄膜晶体管和多条数据线；其中，所述多条栅线沿第一方向延伸，所述多条数据线沿第二方向延伸，所述多个薄膜晶体管呈矩阵式布置，布置的行方向为所述第一方向，布置的列方向为所述第二方向；所述第一方向与所述第二方向交叉设置，所述薄膜晶体管包括有源层，所述有源层包括沟道图案；
在所述多个薄膜晶体管远离所述衬底的一侧制作触控走线层；其中，所述触控走线层包括多条触控线和多个遮光单元，所述遮光单元与所述沟道图案在所述衬底上的正投影至少部分重叠；所述阵列基板的每个薄膜晶体管的有源层均对应一个所述遮光单元；所述多条触控线沿所述第二方向延伸；
所述在所述多个薄膜晶体管远离所述衬底的一侧制作触控走线层，还包括：采用同一构图工艺，形成多条第一引出线和至少一条第二引出线；其中，所述第一引出线沿所述第一方向延伸，用于将一行所述薄膜晶体管所对应的所述遮光单元中的至少两个电连接，所述第一引出线与所述栅线在所述衬底上的正投影无交叠；所述第二引出线仅沿所述第二方向延伸，用于与至少一条所述第一引出线电连接，且所述第二引出线接地；所述第二引出线与所述数据线在所述衬底上的正投影无交叠；每相邻两条所述触控线之间包括至少一条所述第二引出线，所述第一引出线与所述触控线无交叉。
4.一种触控显示装置，其特征在于，所述触控显示装置包括如权利要求1～2任一项所述的阵列基板。
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