WO2019044512A1 - Film de blindage contre les ondes électromagnétiques - Google Patents

Film de blindage contre les ondes électromagnétiques Download PDF

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Publication number
WO2019044512A1
WO2019044512A1 PCT/JP2018/030380 JP2018030380W WO2019044512A1 WO 2019044512 A1 WO2019044512 A1 WO 2019044512A1 JP 2018030380 W JP2018030380 W JP 2018030380W WO 2019044512 A1 WO2019044512 A1 WO 2019044512A1
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WO
WIPO (PCT)
Prior art keywords
layer
noise suppression
electromagnetic wave
resin
film
Prior art date
Application number
PCT/JP2018/030380
Other languages
English (en)
Japanese (ja)
Inventor
昭吾 鴻池
Original Assignee
住友ベークライト株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 住友ベークライト株式会社 filed Critical 住友ベークライト株式会社
Priority to JP2018562273A priority Critical patent/JP6711423B2/ja
Publication of WO2019044512A1 publication Critical patent/WO2019044512A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/38—Layered products comprising a layer of synthetic resin comprising epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting

Definitions

  • the present invention relates to a film for electromagnetic wave shielding.
  • this metal can shield is applied to an assembly (component assembly) of electronic components arranged on a circuit board according to type, and there is a restriction in the arrangement of each electronic component on the circuit substrate. For this reason, the design freedom of the circuit board is not necessarily the best in terms of functions. Furthermore, since the assembly of parts is sealed by the metal can shield, a space is generated between the metal can shield and the assembly of parts, which causes a problem of increasing the size of the electronic device provided with the assembly of parts. .
  • an electronic component sealing body is formed by sealing an electronic component disposed on a circuit substrate with a sealing material, and the upper surface and the side surface of the electronic component sealing body are made of metal thin film
  • a method of coating with a noise suppression layer constituted of a layer or the like has been proposed (see, for example, Patent Document 1).
  • the noise suppression layer is mainly manufactured using a sputtering method.
  • the apparatus used for the sputtering method is complicated and expensive in operation and low in productivity.
  • An object of the present invention is to provide an electromagnetic wave shielding film capable of forming a noise suppression layer relatively easily and with excellent productivity on an electronic component sealing body provided with electronic components.
  • the electromagnetic wave shielding film includes a base material layer and a noise suppression layer laminated on one surface side of the base material layer.
  • the sealing portion contains an epoxy resin as a main material
  • the base material layer contains polymethylpentene as a main material
  • the noise suppression layer is configured to cover the upper surface and the side surface of the sealing portion, According to JIS G 3469, the noise suppression layer of 25 mm in width is attached onto the plate-like sealing portion, and then the noise suppression layer is oriented 90 ° at 25 ° C. from one end thereof.
  • Peel strength measured when peeled off at a speed of 300 mm / min is A [N / mm], and based on JIS G 3469, the noise suppression of 25 mm in width on the plate-like base material layer
  • the layer was attached and then the peel strength measured when the noise suppression layer was peeled from one end at a speed of 300 mm / min in the direction of 90 ° at 25 ° C. was B [N / mm].
  • a film for electromagnetic wave shielding characterized by satisfying a relation of 1 ⁇ A / B.
  • the noise suppression layer contains a particulate conductive material and a binder resin.
  • the conductive material is at least one of a metal material, a metal oxide material, a conductive polymer material, and a conductive ceramic material.
  • the binder resin described in the above (2) or (3) which contains at least one of an epoxy resin, a urethane resin, a polyolefin resin, a polyester resin, a polyamide resin, a silicone resin, a phenol resin, and an acrylic elastomer. Electromagnetic shielding film.
  • the base material layer is a laminate having a three-layer structure in which a first layer, a second layer, and a third layer are laminated in this order, and the third layer is the above-mentioned
  • the electromagnetic wave shielding film according to any one of the above (1) to (4), which is bonded to the noise suppression layer.
  • the binder resin contains an epoxy resin, The film for an electromagnetic wave shield as described in said (2) whose content of the said epoxy resin in the said noise suppression layer is 2 weight% or more and 32 weight% or less.
  • a film for electromagnetic wave shielding having a base material layer and a noise suppression layer laminated on the base material layer is attached to the upper surface side of the electronic component package, and then from the noise suppression layer to the base
  • the film for electromagnetic wave shielding which can provide a noise suppression layer in an electronic component sealing body by a comparatively easy method which says peeling a material layer can be provided.
  • a plurality of electronic component sealing bodies can be manufactured collectively from one electronic component sealing and coupling body. Productivity of body and electronic devices can be improved.
  • FIG. 1 is a longitudinal sectional view showing an embodiment of a semiconductor device manufactured using the film for electromagnetic wave shielding of the present invention.
  • FIG. 2 is a longitudinal sectional view for illustrating a method of manufacturing the semiconductor device shown in FIG.
  • FIG. 3 is a longitudinal sectional view for illustrating a method of manufacturing the semiconductor device shown in FIG.
  • FIG. 4 is a longitudinal sectional view of an electromagnetic wave shielding film of the present invention used to manufacture the semiconductor device shown in FIG.
  • FIG. 1 is a longitudinal sectional view showing an embodiment of a semiconductor device manufactured using the film for electromagnetic wave shielding of the present invention.
  • the upper side in FIG. 1 is referred to as “upper” and the lower side as “lower”.
  • the semiconductor device 20 shown in FIG. 1 includes an interposer (substrate) 25 having conductor posts (not shown) disposed penetrating in the thickness direction, a semiconductor element 26 and a capacitor disposed on the interposer 25, A sealing portion 27 (mold portion) for sealing the electronic element 28 such as a coil, the semiconductor element 26 and the electronic element 28, a noise suppression layer 3 for covering the sealing portion 27 and the interposer 25, a conductor post Wiring 23 electrically connected, bump 21 (terminal) electrically connected to wiring 23, and covering portion 22 provided to cover wiring 23 and expose bump 21. ing.
  • the interposer 25 is a substrate for supporting the semiconductor element 26 and the electronic element 28.
  • the plan view shape thereof is usually a square such as a square or a rectangle.
  • the interposer 25 is formed with a plurality of through holes (not shown) penetrating in the thickness direction, and conductor posts are provided corresponding to the through holes.
  • the semiconductor element 26 and the electronic element 28 are disposed on the interposer 25 such that the electrode pads provided on the lower surface side of the semiconductor element 26 and the electronic element 28 correspond to the conductor posts, respectively.
  • one semiconductor element 26 and two electronic elements 28 are disposed on the interposer 25 respectively.
  • the semiconductor element 26 and the electronic element 28 constitute an electronic component included in the semiconductor device 20.
  • the sealing portion 27 is formed to cover the upper surface side of the semiconductor element 26, the electronic element 28 and the interposer 25.
  • the conductor post formed correspondingly to the through hole of the interposer 25 is electrically connected to the electrode pad (terminal) of the semiconductor element 26 or the electronic element 28 at the upper end thereof.
  • a wire 23 formed in a predetermined shape is provided, and a portion thereof is electrically connected to the lower end of the conductor post.
  • a spherical bump 21 is electrically connected to the lower surface of the wiring 23, whereby the semiconductor element 26 or the electronic element 28 and the bump 21 are connected to an electrode pad (terminal), a conductor post, and a wiring. It is electrically connected through 23. Further, a covering portion 22 provided with an opening 221 for exposing the bump 21 from the lower side thereof is provided to cover the wiring 23.
  • the noise suppression layer 3 is provided to cover the upper surface of the sealing portion 27, the side surface of the sealing portion 27, and the side surface of the interposer 25.
  • the noise suppression layer 3 blocks (shields) the electromagnetic waves and suppresses the noise due to the electromagnetic waves.
  • the semiconductor element 26 and the electronic element 28 provided on the interposer 25 and the outside of the semiconductor element 26 and the electronic element 28 via the noise suppression layer 3, that is, the semiconductor device 20 By blocking (shielding) the electromagnetic wave generated from at least one of the other electronic components and the like located outside of the above, noise due to the electromagnetic wave is suppressed.
  • the noise suppression layer 3 is electrically grounded via a wiring (not shown) on the side of the interposer 25.
  • the semiconductor device 26 includes the semiconductor element 26 and the electronic element 28 that constitute the electronic component, one and two each.
  • the present invention is not limited to this configuration, and the semiconductor device (electronic device)
  • the semiconductor device 26 and the electronic device 28 described above may be provided, and further, electronic components different from the semiconductor device 26 and the electronic device 28 may be provided.
  • the semiconductor device 20 configured as described above is manufactured by the method for manufacturing the semiconductor device 20 described below, using the film for shielding electromagnetic waves of the present invention.
  • the manufacturing method of the semiconductor device 20 using the film for electromagnetic wave shielding of the present invention prepares a sheet material which makes flat form, arranges a plurality of electronic parts on the sheet material, and the electronic parts are arranged.
  • a sealing portion forming process for obtaining an electronic component sealing and coupling body by forming a sealing portion so as to cover the sheet material and the electronic component on the upper surface side of the sheet material, and the electronic component sealing and coupling body
  • the electronic component sealing assembly is cut in the thickness direction so as to correspond to each body to form a recess, thereby obtaining an electronic component sealed body attached to the adhesive tape;
  • a release layer and a noise suppression layer laminated on the release layer on the upper surface side of the stopper By attaching the noise suppression layer to the electronic component sealing body side and pressing the noise suppression
  • FIGS. 2 to 4 are longitudinal sectional views for explaining a manufacturing method of manufacturing the semiconductor device shown in FIG. 1, and FIG. 4 is an electromagnetic wave shield of the present invention used for manufacturing the semiconductor device shown in FIG. It is a longitudinal cross-sectional view of a film.
  • the upper side in FIGS. 2 to 4 is referred to as “upper” and the lower side as “lower”.
  • a flat sheet material 25 ' is prepared as shown in FIG. 2 (a). Thereafter, a plurality of semiconductor elements 26 and electronic elements 28 are placed (placed) on the sheet material 25 '(see FIG. 2 (b); placement step).
  • the sheet 25 includes a plurality of through holes (not shown) formed in advance, and further includes conductor posts (not shown) embedded corresponding to the through holes.
  • the conductor post is formed at a position where the electrode pad (terminal) provided in the semiconductor element 26 and the electronic element 28 corresponds. That is, the sheet material 25 'includes the number of conductor posts provided corresponding to the through holes and the total number of electrode pads (terminals) provided on the plurality of semiconductor elements 26 and the electronic elements 28 disposed on the sheet material 25'. And are formed to be the same.
  • the sheet material 25 ' is cut in the thickness direction to be separated into individual pieces, thereby becoming an interposer 25 (substrate) of the semiconductor device 20 and exhibiting a function of supporting the semiconductor element 26 and the electronic element 28. .
  • the sheet material 25 ′ is not particularly limited as long as it has a hardness sufficient to support the semiconductor element 26 and the electronic element 28.
  • the sheet material 25 ′ may be either a core substrate composed of a core material, a rigid substrate (hard substrate) like a buildup substrate composed of a buildup material, or a flexible substrate (flexible substrate). It is also good.
  • buildup substrates are particularly preferred.
  • the buildup substrate is preferably used particularly because of its excellent processability.
  • the buildup material is not particularly limited, but, for example, a cured product such as a resin composition containing a thermosetting resin such as phenol resin, urea resin, melamine resin, epoxy resin, a curing agent, and an inorganic filler. Is the main material.
  • the core substrate is not particularly limited, but is mainly composed of, for example, a thermosetting resin such as cyanate resin, epoxy resin, bismaleimide-triazine resin, or the like.
  • the flexible substrate is not particularly limited, and examples thereof include polyimide, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polytetrafluoroethylene (PTFE), polyimide benzoxazole (PIBO), It is composed of a thermoplastic resin such as liquid crystal polymer.
  • the semiconductor element 26 and the electronic element 28 are disposed on the sheet material 25 ′, the semiconductor element 26 and the electronic element 28 are respectively disposed at the positions of the conductor posts provided in the sheet material 25 ′. Are arranged on the sheet material 25 ′ so that the electrode pads of the corresponding elements correspond to each other. Then, with such an arrangement, the semiconductor element 26 and the electronic element 28 are disposed on the sheet material 25 ′ at the position where the semiconductor element 26 and the electronic element 28 included in the semiconductor device 20 to be formed should be disposed. Become.
  • the semiconductor element 26 and the electronic element 28 may or may not be fixed on the sheet 25 ', but an adhesive such as an epoxy adhesive (underfill material) Are preferably fixed by Thereby, in the next step [2], when the semiconductor element 26 and the electronic element 28 are sealed by the sealing portion 27, the positional deviation of the semiconductor element 26 and the electronic element 28 is effectively prevented. be able to.
  • the sheet 25 ', the semiconductor element 26, and the electronic element 28 are covered on the surface on the upper surface side of the sheet 25' (the surface on which the semiconductor element 26 and the electronic element 28 are disposed).
  • the sealing part 27 is formed (refer FIG.2 (c) .; sealing part formation process).
  • the sealing portion 27 contains an epoxy resin as a main material. Although it does not specifically limit as a method to form such a sealing part 27, for example, the following methods are mentioned. First, a thermosetting resin composition such as a granular epoxy resin composition is melted, and the thermosetting resin composition in this state is a sheet so as to cover the sheet material 25 ′, the semiconductor element 26 and the electronic element 28. It supplies to the upper surface of material 25 '. Thereafter, the molten thermosetting resin composition is compression molded. Thereby, the sealing portion 27 is formed. According to this method, the semiconductor element 26 and the electronic element 28 can be easily and densely sealed by the sealing portion 27 on the sheet material 25 ′.
  • a thermosetting resin composition such as a granular epoxy resin composition is melted, and the thermosetting resin composition in this state is a sheet so as to cover the sheet material 25 ′, the semiconductor element 26 and the electronic element 28. It supplies to the upper surface of material 25 '. Thereafter, the molten thermosetting resin composition is compression molded. There
  • the adhesive tape 100 having the base 4 and the adhesive layer 2 laminated on the base 4 is prepared, and as shown in FIG. 2 (d), the semiconductor element 26 etc.
  • the adhesive tape 100 is laminated (adhered) to the electronic component sealing connector 270 with the adhesive layer 2 on the electronic component sealing connector 270 side on the side (lower surface side) on which the Sticking process).
  • the sticking of the adhesive tape 100 to the electronic component sealing connection 270 can be performed, for example, as follows. First, the adhesive tape 100 is placed on a dicer table (not shown). The electronic component sealing connector 270 is placed on the adhesive layer 2 so that the surface of the sheet material 25 ′ opposite to the semiconductor element 26 and the like faces the adhesive layer 2. In this state, the electronic component sealing connector 270 is lightly pressed. Thereby, the electronic component sealing connection body 270 is stuck on the adhesive tape 100. The electronic component sealing connector 270 may be attached to the adhesive tape 100 in advance, and then installed on a dicer table.
  • the adhesive tape 100 (dicing tape) supports the electronic component sealing connection 270 by the base material 4 via the adhesive layer 2 and applies energy to the adhesive layer 2 to seal the electronic component of the adhesive layer 2 It has a function of reducing the adhesion to the connector 270.
  • the substrate 4 is mainly made of a resin material, and has a hardness sufficient to support the electronic component sealing connector 270 attached onto the substrate 4 via the pressure-sensitive adhesive layer 2.
  • the resin material include polyethylene, polypropylene, polyolefin resin, ionomer, olefin copolymer, polyester resin, polyether ketone and the like, and one or more of them are used in combination. be able to.
  • the electronic component sealing connection body 270 (electronic component It has a function to adhere to and support the sealing body 290).
  • adhesion of the adhesive layer 2 to the electronic component sealed body 290 is reduced by the application of energy to the adhesive layer 2.
  • the adhesive layer 2 is in a state where peeling can be easily caused between the adhesive layer 2 and the electronic component sealing body 290.
  • the adhesive layer 2 having such a function is constituted of, for example, a resin composition containing (1) a base resin having adhesiveness and (2) a curable resin for curing the adhesive layer 2 as main materials.
  • a base resin (1) for example, acrylic resins (adhesives), silicone resins (adhesives), polyester resins (adhesives), polyvinyl acetate resins (adhesives), polyvinyl ether resins
  • acrylic resins silicone resins
  • polyester resins adhesives
  • polyvinyl acetate resins adhesives
  • polyvinyl ether resins a base resin used as an adhesive layer component like resin (adhesive) or urethane type resin (adhesive) is mentioned.
  • curable resin (2) is provided with the hardenability hardened
  • the base resin being taken into the crosslinked structure of the curable resin by this curing, the adhesive strength of the adhesive layer 2 is reduced.
  • a curable resin (2) for example, at least two or more polymerizable carbon-carbon double bonds which can be three-dimensionally cross-linked by irradiation of energy rays such as ultraviolet rays and electron beams are contained in a molecule as a functional group.
  • energy rays such as ultraviolet rays and electron beams
  • the low molecular weight compound which it has is used.
  • a photoinitiator in the resin composition which comprises the adhesion layer 2, a photoinitiator, a crosslinking agent, an antistatic agent, a tackifier, aging as other components other than each component (1), (2) mentioned above
  • a photoinitiator in the resin composition which comprises the adhesion layer 2, a photoinitiator, a crosslinking agent, an antistatic agent, a tackifier, aging as other components other than each component (1), (2) mentioned above
  • At least one of an inhibitor, an adhesive modifier, a filler, a colorant, a flame retardant, a softener, an antioxidant, a plasticizer, a surfactant, and the like may be contained.
  • the electronic component sealing connector 270 to which the adhesive tape 100 is attached is fixed using, for example, a wafer ring or the like. Thereafter, using a dicing saw (blade), a position corresponding to each semiconductor device 20 (electronic component package 290) to be formed, that is, one semiconductor element 26 and two electronic elements 28 to be provided in the semiconductor device 20. Cutting (dicing) the electronic component sealing connection body 270 in the thickness direction corresponding to each region sealed with the sealing portion 27 to form a recess 62 (cutting step (dicing step); See FIG. 2 (e)).
  • the electronic component sealing body 290 in which the electronic component sealing and coupling body 270 is singulated corresponding to each combination of one semiconductor element 26 and two electronic elements 28 is attached onto the adhesive tape 100. It is obtained in
  • the adhesive tape 100 has a buffer action, and exhibits the function to prevent the crack at the time of cut
  • the cutting of the electronic component sealing and coupling body 270 using the dicing blade reaches the middle of the base material 4 in the thickness direction of the base material 4 as shown in FIG. To be implemented. Thereby, singulation of the electronic component sealing connection body 270 can be implemented reliably. Further, in a state where the electronic component sealing body 290 is attached to the adhesive tape 100, the side surface of the electronic component sealing body 290 formed by singulation, that is, the side surface of the sealing portion 27 and the interposer 25 Can be reliably exposed.
  • a film 300 for electromagnetic wave shielding having the peeling layer 1 (base material layer) and the noise suppression layer 3 laminated on the peeling layer 1 is prepared, and the electronic component sealing obtained by singulation is performed.
  • Vacuum pressure forming is a method of covering the upper surface and the side surface of the electronic component sealing body 290 obtained by singulation with the film 300 for electromagnetic wave shielding using, for example, a vacuum pressure type laminator.
  • the film 300 for electromagnetic wave shielding using, for example, a vacuum pressure type laminator.
  • FIG. 2F the surface of the electronic component sealing body 290 on the opposite side to the adhesive tape 100 and the noise suppression layer 3 side of the film 300 for shielding electromagnetic waves in a closed space which can be in a vacuum atmosphere.
  • the electronic component sealing body 290 and the electromagnetic wave shielding film 300 are set in a state of being superimposed so that the surface of the electronic component sealing body faces the surface of the electronic component sealing body.
  • the closed space is placed under a vacuum atmosphere so that the electromagnetic wave shielding film 300 and the electronic component sealing body 290 approach each other uniformly from the electromagnetic wave shielding film 300 side, and then pressure is applied. In this way, vacuum pressure forming is performed.
  • the peeling layer 1 pushes the noise suppression layer 3 corresponding to the shape of the recess 62 by making the closed space under a vacuum atmosphere while uniformly pressing from the electromagnetic wave shielding film 300 side.
  • the noise suppression layer 3 positioned closer to the electronic component package 290 than the release layer 1 is deformed in correspondence with the shape of the recess 62.
  • the upper surface and the side surface of the electronic component sealing body 290 are covered with the noise suppression layer 3 in a state in which the noise suppression layer 3 is pressed corresponding to the shape of the recess 62.
  • the temperature to be attached in such a second attaching step is not particularly limited, but is preferably 15 ° C. or more and 220 ° C. or less, more preferably 20 ° C. or more and 210 ° C. or less, still more preferably 150 ° C. or more and 200 ° C. or less It is.
  • the pressure to be attached is not particularly limited, but is preferably 0.1 MPa or more and 20.0 MPa or less, and more preferably 0.5 MPa or more and 15.0 MPa or less.
  • the time for sticking is not particularly limited, but is preferably 5 seconds to 90 minutes, and more preferably 30 seconds to 10 minutes.
  • the noise suppression layer 3 is pushed into the recesses 62 between the adjacent electronic component sealing bodies 290, and the noise suppression layer 3 is used to make the electronic components
  • the top and side surfaces of the sealing body 290 can be reliably covered.
  • the press molding method is, for example, the following method.
  • the electromagnetic wave shielding film 300 is disposed on the electronic component sealing body 290 attached on the adhesive tape 100.
  • a cushioning material is disposed on the electromagnetic wave shielding film 300. In this state, they are held by two flat plates from the upper surface side and the lower surface side. After that, the two flat plates are brought close and pressed. Thus, the press molding method is implemented.
  • the peeling layer 1 corresponds to the shape of the recess 62 also by bringing the film for electromagnetic shielding 300 and the electronic component sealing body 290 closer to each other in a state where the cushioning material is disposed on the film for electromagnetic shielding 300. Then, the noise suppression layer 3 can be pressed, and the noise suppression layer 3 located closer to the electronic component sealed body 290 than the peeling layer 1 can be deformed according to the shape of the recess 62 in accordance with the pressing. Therefore, as shown in FIG. 3A, the noise suppression layer 3 covers the upper surface and the side surface of the electronic component sealing body 290 in a state where the noise suppression layer 3 is pressed in according to the shape of the recess 62. Can.
  • the film 300 for an electromagnetic shielding used in the present step [5] is the electronic component sealing body 290 in a state where the noise suppression layer 3 is pushed into the concave portion 62 between the electronic component sealing bodies 290 adjacent to each other. Is used to cover the noise suppression layer 3. That is, the electromagnetic wave shielding film 300 is configured to form the noise suppression layer 3 covering the upper surface and the side surface of the sealing portion 27 and the side surface of the interposer 25 on the electronic component sealed body 290.
  • the electromagnetic wave shielding film 300 has a peeling layer 1 (base material layer) and a noise suppression layer 3 laminated on one side of the peeling layer 1, and the noise suppression layer 3 and the electronic component sealing body 290 Are disposed on the electronic component sealing body 290 side so as to face each other (see FIG. 2 (f) and FIG. 4).
  • the peeling layer 1 is pushed in when covering the upper surface and the side surface of the electronic component sealed body 290 by pushing the noise suppression layer 3 following the shape of the concave portion 62.
  • the noise suppression layer 3 functions as a protective (buffer) material that prevents breakage.
  • the peeling layer 1 is peeled from the noise suppression layer 3 in the next step [6].
  • the storage elastic modulus at 100 ° C. of the peeling layer 1 is preferably 1.0E + 04 Pa or more and 1.0E + 11 Pa or less, more preferably 1.0E + 05 Pa or more and 1.0E + 10 Pa or less, and 1.0E + 06 Pa or more and 1.0E + 09 Pa or more. It is further preferred that Thus, it can be said that the peeling layer 1 has flexibility by setting the storage elastic modulus at 100 ° C. of the peeling layer 1 within the above range. For this reason, when covering the upper surface and the side surface of the electronic component sealed body 290 using the film 300 for electromagnetic shielding, the noise suppression layer 3 is made to correspond to the shape of the recess 62 without causing the noise suppression layer 3 to break.
  • the upper surface and the side surface of the electronic component sealing body 290 are covered with the noise suppression layer 3 in a state where the noise suppression layer 3 is pressed in according to the shape of the recess 62.
  • the electromagnetic wave shielding (blocking) property by the noise suppression layer 3 is improved. It will be done.
  • the peeling layer 1 is composed of the third layer 13, the second layer 12, and the first layer 11, and the noise suppression layer 3 of the peeling layer 1 is laminated on each of these layers.
  • the layers are stacked in this order from the surface side.
  • the types, thicknesses, and the like of the layers 11 to 13 are appropriately combined (see FIG. 4) so that the characteristics of the release layer 1 described above can be exhibited.
  • the first layer 11 is a pressing portion of the vacuum pressure type laminator or the like when the noise suppression layer 3 is pressed using the vacuum pressure type laminator or the like corresponding to the shape of the concave portion 62 in the second bonding step. It exerts the function of releasability with In addition, the first layer 11 propagates the pressing force from the pressing portion to the second layer 12 side.
  • the constituent material of the first layer (first release layer) 11 is not particularly limited.
  • a resin such as syndiotactic polystyrene, polymethylpentene, polybutylene terephthalate, polypropylene, cyclic olefin polymer, and silicone Materials can be mentioned.
  • polymethylpentene it is preferable to use polymethylpentene.
  • the first layer 11 having polymethylpentene by using the first layer 11 having polymethylpentene, the releasability of the first layer 11 from the device, and further, the heat resistance and the shape followability can be improved.
  • polymethylpentene When polymethylpentene is used for the first layer 11, its content is not particularly limited, but is preferably 60% by weight or more, and more preferably 70% by weight or more and 95% by weight or less. If the content of polymethylpentene is less than the lower limit value, the releasability of the first layer 11 may be reduced. Moreover, when content of polymethyl pentene exceeds the said upper limit, there exists a possibility that shape following property of the 1st layer 11 may run short.
  • the first layer 11 may be made of only polymethylpentene. In addition to polymethylpentene, the first layer 11 may further contain a styrenic elastomer, polyethylene, polypropylene or the like.
  • the average thickness of the first layer 11 is not particularly limited, but is preferably 5 ⁇ m or more and 100 ⁇ m or less, and more preferably 10 ⁇ m or more and 65 ⁇ m or less. If the average thickness of the first layer 11 is less than the lower limit value, the first layer 11 may be broken and its releasability may be reduced. In addition, when the average thickness of the first layer 11 exceeds the upper limit value, the shape following property of the peeling layer 1 may be reduced, and the shape following property of the noise suppression layer 3 may be reduced.
  • the storage elastic modulus at 100 ° C. of the first layer 11 is preferably 1.0E + 05 Pa or more and 1.0E + 11 Pa or less, and more preferably 5.0E + 06 Pa or more and 1.0E + 10 Pa or less.
  • the first layer 11 has excellent stretchability at the time of heating of the film 300 for shielding an electromagnetic wave, and hence the recesses of the noise suppression layer 3
  • the shape followability to 62 can be more reliably improved.
  • the storage elastic modulus as the whole peeling layer 1 can be set comparatively easily in the range mentioned above.
  • the surface tension of the first layer 11 is preferably 20 to 40 mN / m, and more preferably 25 to 35 mN / m. It can be said that the first layer 11 having a surface tension within this range has excellent releasability. For this reason, the 1st layer 11 can be made to exfoliate from a press part after pushing in using a vacuum pressurization type laminator etc.
  • the third layer 13 is a peeling layer in the first peeling step [6] after the pressing of the noise suppression layer 3 into the recess 62 is performed using the vacuum pressure type laminator or the like in the second bonding step [5].
  • the peeling layer 1 is provided with a peelable function.
  • the third layer 13 has a function of following the shape of the recess 62 and also has a function of transmitting the pressure from the pressing portion on the side of the noise suppression layer 3.
  • the constituent material of the third layer (second release layer) 13 is not particularly limited.
  • a resin such as syndiotactic polystyrene, polymethylpentene, polybutylene terephthalate, polypropylene, cyclic olefin polymer, silicone Materials can be mentioned.
  • polymethylpentene it is preferable to use polymethylpentene.
  • releasability with the noise suppression layer 3 of the third layer 13 can be improved, and further, heat resistance and shape followability can be improved.
  • the content of polymethylpentene in the third layer 13 is not particularly limited, but is preferably 60% by weight or more, and more preferably 70% by weight or more and 95% by weight or less.
  • the content of polymethylpentene is less than the lower limit value, the releasability of the third layer 13 may be reduced.
  • content of polymethyl pentene exceeds the said upper limit, there exists a possibility that shape following property of the 3rd layer 13 may run short.
  • the third layer 13 may be made of only polymethylpentene, it may further contain styrene elastomer, polyethylene, polypropylene or the like in addition to the polymethylpentene. Moreover, the resin material which comprises the 3rd layer 13 and the 1st layer 11 may be same or different.
  • the average thickness of the third layer 13 is not particularly limited, but is preferably 5 ⁇ m or more and 100 ⁇ m or less, and more preferably 10 ⁇ m or more and 65 ⁇ m or less.
  • the average thickness of the third layer 13 is less than the lower limit, the heat resistance is insufficient, the heat resistance of the base material layer is insufficient in the second bonding step [5], and deformation occurs, and the noise suppression layer 3 may be deformed.
  • the average thickness of the third layer 13 exceeds the upper limit, the total thickness of the whole film for an electromagnetic shielding film may be increased, and the workability such as cutting may be deteriorated. It is not target.
  • the thicknesses of the first layer 11 and the third layer 13 may be the same or different.
  • the storage elastic modulus at 100 ° C. of the third layer 13 is preferably 1.0E + 05 Pa or more and 1.0E + 11 Pa or less, and more preferably 5.0E + 06 Pa or more and 1.0E + 10 Pa or less.
  • the third layer 13 has excellent stretchability at the time of heating the film 300 for shielding an electromagnetic wave. For this reason, the shape followability to the third layer 13 and the concave portion 62 of the noise suppression layer 3 can be more reliably improved.
  • the surface tension of the third layer 13 is preferably 20 to 40 mN / m, and more preferably 25 to 35 mN / m. It can be said that the third layer 13 having a surface tension within this range has excellent releasability. Therefore, when peeling off the peeling layer 1 from the noise suppression layer 3 after pressing using a vacuum pressure type laminator or the like, the peeling layer 1 is reliably made at the interface between the third layer 13 and the noise suppression layer 3 It can be peeled off.
  • the second layer 12 is used as the third layer 13 when pressing the noise suppression layer 3 into the recess 62 using the peeling layer 1 as a base for pressing in the second bonding step [5].
  • 62 has a cushion function for pushing in (embedding).
  • the second layer 12 has a function of causing the pressing force to act uniformly on the third layer 13 and further on the noise suppression layer 3 via the third layer 13.
  • the noise suppression layer 3 can be pushed into the recess 62 with excellent sealing performance (followability) without generating a void between the noise suppression layer 3 and the recess 62.
  • the constituent material of the second layer 12 is, for example, an ⁇ -olefin polymer such as polyethylene or polypropylene, ethylene, propylene, butene, pentene, hexene, methylpentene or the like as a copolymer component
  • Engineering plastics resin such as ⁇ -olefin copolymer, polyether sulfone and polyphenylene sulfide may be mentioned, and these may be used alone or in combination. Among these, it is preferable to use an ⁇ -olefin copolymer.
  • a copolymer of an ⁇ -olefin such as ethylene and a (meth) acrylic ester, a copolymer of ethylene and vinyl acetate, a copolymer of ethylene and (meth) acrylic acid (EMMA), And partial ion cross-linked products thereof.
  • the ⁇ -olefin copolymer is excellent in shape followability and further excellent in flexibility as compared with the constituent material of the first layer 11. From this, it is possible to reliably provide the second layer 12 made of such a constituent material with a cushion function for pushing (embedding) the first layer 11 into the recess 62.
  • the second layer 12 may be a blend of the constituent materials listed in the first layer 11 and the third layer 13 described above and the constituent material of the second layer 12.
  • the average thickness of the second layer 12 is not particularly limited, but is preferably 20 ⁇ m or more and 500 ⁇ m or less, and more preferably 100 ⁇ m or more and 400 ⁇ m or less.
  • the average thickness of the second layer 12 is less than the lower limit value, there is a fear that the shape following property of the second layer 12 is insufficient and the following property to the concave part 62 is insufficient in the second pasting step [5]. There is.
  • the average thickness of the second layer 12 exceeds the upper limit value, in the second bonding step [5], the resin exudation from the second layer 12 is increased. For this reason, there is a possibility that the resin which stained out will adhere to the heating board of a compression bonding apparatus, and workability may fall.
  • the storage elastic modulus at 100 ° C. of the second layer 12 is preferably 1.0E + 04 Pa or more and 1.0E + 10 Pa or less, and more preferably 1.0E + 05 Pa or more and 1.0E + 09 Pa or less.
  • the second layer 12 has better elasticity than the first layer 11 when the film for electromagnetic shielding 300 is heated. Can be easily applied. Therefore, the shape followability of the second layer 12 and further the third layer 13 and the recess 62 of the noise suppression layer 3 can be more reliably improved.
  • the storage elastic modulus of each of the layers 11 to 13 can be easily set within the range of 1.0E + 04 Pa or more and 1.0E + 11 Pa or less by setting the storage elastic modulus of each of the layers 11 to 13 appropriately within the above-described range. It can be set.
  • the peeling layer (base material layer) 1 containing polymethylpentene as a main material can be prepared.
  • the total thickness of the release layer 1 is not particularly limited, but is preferably 20 ⁇ m to 1000 ⁇ m, and more preferably 70 ⁇ m to 500 ⁇ m.
  • the third layer 13 may be broken and the releasability of the release layer 1 may be reduced.
  • the average thickness of the whole peeling layer 1 exceeds the said upper limit, there exists a possibility that the shape following property of the peeling layer 1 will fall and the shape following property with respect to the recessed part 62 of the noise suppression layer 3 may fall.
  • the number of constituent layers of the release layer 1 is not particularly limited, and may be a multilayer structure of two or more layers including the three-layer structure as described above, or may be a single layer structure.
  • the peeling layer 1 when making the peeling layer 1 into a single layer structure, it does not specifically limit as a constituent material of this peeling layer 1, For example, syndiotactic polystyrene, polymethyl pentene, polybutylene terephthalate, polyethylene terephthalate, non-axially stretched polypropylene And polypropylene such as biaxially oriented polypropylene, cyclic olefin polymers, silicone, styrene elastomer resin, styrene butadiene rubber, acrylic rubber, epoxy resin, polyphenol, and resin materials such as polyurethane. Among these, it is preferable to use polymethylpentene.
  • the indentation property of the peeling layer 1 to the noise suppression layer 3 and further the heat resistance can be improved, and the peeling layer 1 with good releasability from the noise suppression layer 3 at the time of the first peeling step [6] described later. Can be peeled off.
  • the thickness of the peeling layer 1 in this case is not particularly limited, but is preferably 3 ⁇ m or more and 2000 ⁇ m or less, and more preferably 5 ⁇ m or more and 500 ⁇ m or less.
  • the peeling layer 1 and hence the noise suppression layer 3 may be broken, and the electromagnetic wave shielding properties may be reduced.
  • the average thickness of the peeling layer 1 exceeds the above upper limit, the pressing force from the peeling layer 1 to the noise suppression layer 3 is not sufficiently transmitted, and the pushability of the noise suppression layer 3 to the concave portion 62 is sufficiently obtained. There is no fear.
  • the noise suppression layer 3 includes the semiconductor element 26 and the electronic element 28 provided in the electronic component sealing body 290, and the other electronic components and the like located on the opposite side of the electronic component sealing body 290 via the noise suppression layer 3. Has a function to block (shield) electromagnetic waves generated from at least one of them.
  • the noise suppression layer 3 is not particularly limited, and may block electromagnetic waves in any form.
  • a form of the noise suppression layer 3 for example, a reflection layer that blocks (shields) the electromagnetic wave that has entered the noise suppression layer 3 by reflecting it and a shield layer that absorbs the electromagnetic wave that has entered the noise suppression layer 3 (blocks) And an absorbent layer.
  • the reflection layer and the absorption layer both have a configuration containing a particulate conductive material and a binder resin.
  • the conductive material preferably contains at least one of a metal material, a metal oxide material, a conductive polymer material, and a conductive ceramic material.
  • the reflective layer exhibits electromagnetic wave shielding properties by reflecting an electromagnetic wave incident on the reflective layer.
  • the reflective layer include a surface treatment of a conductive material such as a conductive adhesive layer, a metal thin film layer, a metal mesh, and ITO. These may be used alone or in combination. Among these, it is preferable to use a conductive adhesive layer.
  • the conductive adhesive layer is preferably used as a reflective layer because it exhibits excellent electromagnetic wave shielding properties even when its film thickness (average thickness) is set relatively thin.
  • the conductive adhesive layer is configured to include metal powder (metal material) and a binder resin.
  • metal powder metal material
  • the metal powder include gold, silver, copper or silver-coated copper, nickel and the like.
  • silver is preferable because it is excellent in electromagnetic wave shielding properties.
  • various resin materials such as a thermosetting resin or a thermoplastic resin, can be used as binder resin.
  • epoxy resin epoxy resin, phenol resin such as phenol novolac resin, amino resin, unsaturated polyester resin, urethane resin, silicone resin, acrylic resin, polyester resin, vinyl chloride resin, styrene resin, polyamide resin, polyolefin resin, acrylic resin
  • Acrylic elastomers such as rubber, styrene elastomers, elastomers such as olefin elastomers, etc. may be mentioned, and one or more of these may be used in combination.
  • the binder resin it is preferable to use a thermosetting resin such as an epoxy resin and an acrylic elastomer such as an acrylic rubber in combination.
  • the binder resin contains a thermosetting resin and an acrylic elastomer
  • the content ratio of the metal powder to the binder resin in the conductive adhesive layer is not particularly limited, but is preferably 20:80 to 95: 5 by weight ratio, and is 40:60 to 85:15. More preferable.
  • the content of the binder resin in the conductive adhesive layer (noise suppression layer) is preferably 5 to 80% by weight, and more preferably 15 to 60% by weight.
  • the conductive adhesive layer may further contain a flame retardant, a leveling agent, a viscosity modifier and the like in addition to the metal powder and the binder resin.
  • the average thickness (E1) of the reflective layer is not particularly limited, but is preferably 100 nm or more and 100 ⁇ m or less, and more preferably 1 ⁇ m or more and 20 ⁇ m or less.
  • the absorbing layer absorbs electromagnetic waves incident on the absorbing layer and converts the electromagnetic waves into heat energy to exhibit electromagnetic wave shielding properties.
  • a conductive absorption layer for example, a conductive absorption layer mainly composed of a conductive absorption material such as metal powder (metal material) and a conductive polymer material, a dielectric absorption material such as a carbon-based material and a conductive polymer material And magnetic absorbing layers composed mainly of magnetic absorbing materials such as soft magnetic metals, etc., and these may be used alone or in combination.
  • this absorption layer contains the binder resin mentioned above other than the said main material.
  • the conductive absorption layer absorbs electromagnetic waves by converting electromagnetic energy into thermal energy by a current flowing inside the material when an electric field is applied.
  • the dielectric absorption layer absorbs electromagnetic waves by converting the electromagnetic waves into heat energy by dielectric loss.
  • the magnetic absorption layer absorbs electromagnetic waves by converting energy of radio waves into heat and consuming it by magnetic losses such as overcurrent loss, hysteresis loss, magnetic resonance and the like.
  • a dielectric absorption layer and a conductive absorption layer are preferably used as an absorption layer because they exhibit excellent electromagnetic wave shielding properties even when the film thickness (average thickness) is set relatively thin.
  • the film thickness can be set relatively easily and weight reduction is also possible.
  • Examples of the conductive absorption material include conductive polymer materials, metal oxide materials such as ATO, and conductive ceramic materials.
  • the conductive polymer material for example, polyacetylene, polypyrrole, PEDOT (poly-ethylenedioxythiophene), PEDOT / PSS, polythiophene, polyaniline, polyaniline, poly (p-phenylene), polyfluorene, polycarbazole, polysilane or derivatives thereof, etc. These may be used alone or in combination of two or more.
  • dielectric absorbing material examples include carbon-based materials, conductive polymer materials, ceramic materials and the like.
  • carbon-based material for example, single-walled carbon nanotubes, carbon nanotubes such as multi-walled carbon nanotubes, carbon nanofibers, CN nanotubes, CN nanotubes, CN nanofibers, BCN nanotubes, BCN nanofibers, graphene, carbon microcoils, carbon Nanocoils, carbon nanohorns, carbon such as carbon nanowalls, etc. may be mentioned, and one or more of these may be used in combination.
  • the ceramic material may, for example, be barium titanate, perovskite-type barium calcium zirconate titanate crystal particles, titania, alumina, zirconia, silicon carbide or aluminum nitride, and one or more of these may be used in combination. be able to.
  • the magnetic absorption material for example, iron, silicon steel, magnetic stainless steel (Fe-Cr-Al-Si alloy), sendust (Fe-Si-Al alloy), permalloy (Fe-Ni alloy), silicon copper (Fe Soft magnetic metals such as —Cu—Si alloy), Fe—Si alloy, Fe—Si—B (—Cu—Nb) alloy, ferrite and the like.
  • the average thickness (E2) of the absorbing layer is not particularly limited, but is preferably 1 ⁇ m to 300 ⁇ m, and more preferably 2 ⁇ m to 100 ⁇ m.
  • the sealing portion 27 contains an epoxy resin as a main material
  • the peeling layer (base material layer) 1 contains polymethylpentene as a main material.
  • the noise suppression layer 3 with a width of 25 mm is attached at 100 ° C.
  • the noise suppression layer 3 is Peel strength measured when peeled off at a speed of 300 mm / min in the direction of 90 ° in A direction is A [N / mm], and in accordance with JIS G 3469, plate-like peeling layer 1 (base layer A) the noise suppression layer 3 with a width of 25 mm is attached at 100 ° C., and then the noise suppression layer 3 is peeled from one end at a speed of 300 mm / min in the direction of 90 ° at 25 ° C.
  • the peel strength to be measured is B [N / mm]
  • the constituent materials of the noise suppression layer 3, the thickness and the like are appropriately combined so as to satisfy the relationship of 1 ⁇ A / B.
  • the peeling layer 1 can be reliably peeled from the film 300 for an electromagnetic wave shield stuck on the electronic component sealing body 290 (upper surface and side surface of the sealing part 27) in the following process [6].
  • the binder resin of the noise suppression layer 3 it is particularly preferable to use an epoxy resin, a phenol resin and an acrylic elastomer in combination.
  • the binder resin of the noise suppression layer 3 contains an epoxy resin, a phenol resin and an acrylic elastomer
  • the adhesiveness of the noise suppression layer 3 and the sealing part 27 which has an epoxy resin as a main material can be improved.
  • the peel strength (peel strength A) between the noise suppression layer 3 and the sealing portion 27 is higher than the peel strength (peel strength B) between the noise suppression layer 3 and the peeling layer 1 . Therefore, when the peeling layer 1 is peeled from the noise suppression layer 3, the noise suppression layer 3 easily stays on the sealing portion 27 side, and the resin residue derived from the noise suppression layer 3 hardly occurs on the peeling layer 1 side. It is considered to be.
  • the content of the epoxy resin in the noise suppression layer 3 is preferably 2% by weight or more and 32% by weight or less, and more preferably 6% by weight or more and 24% by weight or less. Thereby, generation
  • the peel strength A and the peel strength B may satisfy the relation 1 ⁇ A / B, but preferably satisfy the relation 1.5 ⁇ A / B, and the relation 2 ⁇ A / B It is more preferable to satisfy, to satisfy the relation of 3.0 ⁇ A / B is further preferable, and to satisfy the relation of 4.0 ⁇ A / B ⁇ 6.0 is particularly preferable.
  • the peeling layer 1 can be more reliably peeled from the film 300 for an electromagnetic wave shield, and in the present step [5], the noise suppression layer 3 is removed from the recess 62. At the time of pressing, occurrence of positional deviation between the third layer 13 and the noise suppression layer 3 can be appropriately suppressed or prevented.
  • the peel strength A [N / mm] and the peel strength B [N / mm] should be measured using, for example, a tensile tester (manufactured by A & D Co., "TENSILON RTG-1310"). Can.
  • the peeling layer 1 is peeled off from the electromagnetic wave shielding film 300 attached to the electronic component sealing body 290 (first peeling step).
  • the peeling layer 1 is peeled from the noise suppression layer 3.
  • the upper surface and the side surface of the electronic component sealed body 290 are covered with the noise suppression layer 3 in a state where the peeling layer 1 is peeled from the noise suppression layer 3.
  • the noise suppression layer 3 is provided on the upper surface and the side surface of the electronic component sealing body 290 in a state where the electronic component sealing body 290 is attached onto the adhesive tape 100.
  • a plurality of electronic component sealing bodies 290 in such a state are collectively formed.
  • peeling layer 1 it does not specifically limit as a method to peel the peeling layer 1, For example, peeling by a manual work is mentioned.
  • the peeling layer 1 is gripped, and the peeling layer 1 is peeled from the noise suppression layer 3 from the gripped end. Then, the peeling layer 1 is peeled from the noise suppression layer 3 by peeling the peeling layer 1 sequentially from this end to the center of the peeling layer 1 and further to the other end.
  • the peeling layer 1 can be relatively easily peeled from the noise suppression layer 3 without leaving the noise suppression layer 3 in the peeling layer 1. That is, the noise suppression layer 3 can be transferred from the peeling layer 1 to the upper surface and the side surface of the electronic component sealed body 290 (the sealing portion 27).
  • the peeling temperature is preferably 180 ° C. or less, more preferably 165 ° C. or less, and still more preferably 20 ° C. or more and 150 ° C. or less.
  • the upper surface and the side surface of the electronic component sealing body 290 can be covered with the noise suppression layer 3 in a state where the peeling layer 1 is peeled from the noise suppression layer 3.
  • the noise suppression layer 3 can be provided on the electronic component package 290 by a relatively easy method. Specifically, when the noise suppression layer 3 is formed on the electronic component sealed body 290 using a sputtering method, there is a problem that the operation of the apparatus used becomes complicated or the apparatus becomes expensive. In the present invention, there is no such problem, and it is said that the peeling layer 1 is peeled after the film 300 for electromagnetic wave shielding having the peeling layer 1 and the noise suppression layer 3 is attached to the electronic component sealing body 290 side.
  • the noise suppression layer 3 can be provided on the electronic component sealing body 290 in a very easy way.
  • the adhesive tape 100 is peeled off from the electronic component sealed body 290 (second peeling step).
  • the adhesiveness of the adhesive layer 2 to the electronic component sealed body 290 is reduced. Thereby, it is set as the state which peeling arises between the adhesion layer 2 and the electronic component sealing body 290. FIG. Thereafter, the adhesive tape 100 is peeled off from the electronic component sealed body 290.
  • a plurality of electronic component sealing bodies 290 whose upper surfaces and side surfaces are covered by the noise suppression layer 3 can be collectively formed in a plurality, so that the productivity of the electronic component sealing body 290 can be improved.
  • the method of irradiating an energy ray to the adhesion layer 2 the method of heating the adhesion layer 2, etc. are mentioned.
  • Such a method does not require the semiconductor element 26 and the electronic element 28 to go through unnecessary heat history, and energy can be applied to the adhesive layer 2 relatively easily and efficiently. Are preferably used.
  • the energy ray for example, an ultraviolet ray, an electron beam, a particle beam such as an ion beam and the like can be mentioned. Note that these energy rays may be used in combination of two or more. Among these, it is particularly preferable to use ultraviolet light. According to the ultraviolet light, the adhesiveness of the adhesive layer 2 to the electronic component sealing body 290 can be efficiently reduced.
  • the interposer 25 side of the electronic component package 290 that is, the surface side (lower surface side) opposite to the semiconductor element 26 and the electronic element 28 of the interposer 25.
  • the wiring 23 patterned in a predetermined shape is formed so as to be electrically connected to the conductor post (wiring formation step).
  • the method of forming the wiring 23 is not particularly limited.
  • I a method of forming the wiring 23 using a plating method such as electrolytic plating method, electroless plating method, II: containing a conductive material
  • a method of forming the wiring 23 by supplying the liquid material to the surface of the electronic component sealing body 290 on the interposer 25 side, and drying and solidifying it.
  • the method I in particular, the electrolytic plating method.
  • the wiring 23 which exhibits excellent adhesion to the conductor post can be easily and surely formed.
  • the interposer 25 side of the electronic component sealing body 290 that is, the surface side (lower surface side) opposite to the semiconductor element 26 and the electronic element 28 of the interposer 25.
  • the covering portion 22 including the opening 221 is formed so that a part of the wiring 23 is exposed (covering portion forming step).
  • the opening 221 is formed to correspond to the position where the bump 21 is to be formed in the next process [10].
  • Such a covering portion (covering layer) 22 is usually formed of a laminate in which an upper layer mainly composed of Au is laminated on a lower layer mainly composed of Ni, and is formed, for example, using an electroless plating method. Be done.
  • the bumps 21 are formed to be electrically connected to the wiring 23 exposed from the opening 221 (bump connecting step).
  • the connection between the conductor post and the bump 21 is performed via the wiring 23, so that the bump 21 has a position different from that of the conductor post in the planar direction of the interposer 25. Can be placed. In other words, they can be arranged such that the central portions of the bumps 21 and the conductor posts do not overlap. Therefore, the bumps 21 can be formed at desired positions on the lower surface of the obtained semiconductor device 20.
  • the method of bonding the bumps 21 to the wires 23 is not particularly limited, and for example, it is performed by interposing a flux having viscosity between the bumps 21 and the wires 23.
  • a brazing material such as solder, silver brazing, copper brazing, phosphorous copper brazing, etc. may be mentioned.
  • the semiconductor device 20 is manufactured through the above-described steps.
  • the operation of the device used becomes complicated, or the device is expensive.
  • the electromagnetic wave shielding film 300 having the peeling layer 1 and the noise suppression layer 3 is attached to the electronic component sealed body 290 in the step [5], and then peeling is performed in the step [6].
  • the noise suppression layer 3 can be provided on the electronic component sealing body 290 by a relatively easy method of peeling the layer 1.
  • a plurality of electronic component sealed bodies 290 are collectively manufactured from the one electronic component sealing and coupling body 270 obtained in the step [2] through the steps [3] to [7].
  • the productivity of the semiconductor device 20 obtained from the electronic component package 290 and thus the electronic component package 290 can be improved.
  • the noise suppression layer 3 is provided on the upper surface of the sealing portion 27 of the electronic component sealing body 290, the side surface of the sealing portion 27, and the side surface of the interposer 25.
  • the noise suppression layer 3 may be formed at least on the upper surface of the sealing portion 27 and the side surface of the sealing portion 27. Therefore, the formation of the noise suppression layer 3 on the side surface of the interposer 25 can be omitted.
  • the semiconductor device 20 manufactured by applying the film for electromagnetic wave shielding of the present invention is, for example, a mobile phone, a medical device, a digital camera, a video camera, a car navigation, a personal computer, a game machine, a liquid crystal television, a liquid crystal display, It can be widely used in organic electroluminescent displays, printers and the like.
  • the film for shielding an electromagnetic wave according to the present invention is not only applied to the manufacture of a device having such a configuration, but, for example, is an electronic device independently provided with an electronic component such as a semiconductor device of CSP (Chip Size Package) type, a capacitor, and a coil. It can also be used for the production of
  • CSP Chip Size Package
  • the film 300 for electromagnetic wave shielding of this invention was comprised by the laminated body of the peeling layer 1 (base material layer) and the noise suppression layer 3, it is not limited to this.
  • the electromagnetic wave shielding film 300 may include another layer different from the peeling layer 1 (base material layer) and the noise suppression layer 3.
  • the noise suppression layer 3 is provided also on the side surface of the interposer 25 in the embodiment, the present invention is not limited to this, as long as the noise suppression layer 3 is provided at least on the upper surface of the sealing portion 27 and the side surface The formation of the noise suppression layer 3 on the side surface of the interposer 25 may be omitted.
  • one or more steps for any purpose may be added to the method of manufacturing the electronic component package and the method of manufacturing the electronic device.
  • Example 1A Production of film for electromagnetic shielding
  • polymethylpentene manufactured by Mitsui Chemicals, Inc., trade name: TPX DX231
  • TPX DX231 As a resin material for forming the third layer, polymethylpentene (manufactured by Mitsui Chemicals, Inc., trade name: TPX DX231) was prepared.
  • a resin material for forming the second layer 35 wt% of ethylene-methyl acrylate copolymer (Mitsui Dupont Polychemicals Co., Ltd., trade name: Nucrel AN4214C), polypropylene (Prime Polymer Co., Ltd., trade name)
  • ethylene-methyl acrylate copolymer Mitsubishi Chemicals, Ltd., trade name: Nucrel AN4214C
  • polypropylene Principal Polymer Co., Ltd., trade name
  • a mixture containing 30 wt% of E-203GP) and 35 wt% of polymethylpentene manufactured by Mitsui Chemicals, Inc., trade name: TPX DX231) was prepared.
  • a resin material (liquid material) for forming the noise suppression layer was prepared.
  • silver particles manufactured by Fukuda Metal Foil & Powder Industry Co., Ltd., trade name: Ag-XF301
  • epoxy resin trade name: EPICRON N-670, manufactured by DIC Corporation
  • acrylic rubber manufactured by Nagase ChemteX, trade name: SG-708-6
  • phenol novolac resin manufactured by Sumitomo Bakelite, trade name: PR-HF-3
  • a resin material for forming a noise suppression layer was applied to the release layer and then dried to form a noise suppression layer, thereby producing a film for electromagnetic wave shielding.
  • the average thickness of the whole film for electromagnetic wave shielding of Example 1A is 240 micrometers
  • the average thickness of a 1st layer is 20 micrometers
  • the average thickness of a 3rd layer is 20 micrometers
  • the average of a 2nd layer The thickness was 180 ⁇ m
  • the average thickness of the noise suppression layer was 20 ⁇ m.
  • the storage elastic modulus at 100 ° C. of the first layer, the second layer and the third layer in the film for electromagnetic wave shielding of Example 1A is 2.0E + 08Pa, 5.0E + 07Pa and 2.0E + 08Pa, respectively.
  • Example 2A to 6A An electromagnetic wave shielding film was produced in the same manner as in Example 1A except that the resin material for forming the noise suppression layer was changed as shown in Table 1.
  • the resin material (liquid material) for forming the noise suppression layer contains silver particles (manufactured by Fukuda Metal Foil Powder Industry Co., Ltd., trade name: Ag-XF301) as a particulate metal material, and a fluorine resin (binder resin)
  • a film for electromagnetic wave shielding was produced in the same manner as in Example 1A except that a resin material containing Obrigard PS 325R (solid content: 10%) manufactured by AGC Cortec Co., Ltd. was prepared.
  • a noise suppression layer having a width of 25 mm was formed using a resin material for forming a noise suppression layer prepared when producing the films for electromagnetic wave shielding of Examples 1A to 6A and Comparative Example 1A. And these noise suppression layers were stuck at 100 degreeC on the plate-like sealing part which consists of an epoxy resin composition (Sumitomo Bakelite Co., Ltd. make, "XF8680") which has an epoxy resin as a main material, respectively. Then, according to JIS G 3469, the peel strength A measured when the noise suppression layer is peeled from one end at a speed of 300 mm / min at 25 ° C. in the direction of 90 ° at 25 ° C. It measured using an A & D company "TENSILON RTG-1310"). The measurement results are shown in Table 1.
  • ⁇ Peel strength B> A noise suppression layer having a width of 25 mm was formed using a resin material for forming a noise suppression layer prepared when producing the films for electromagnetic wave shielding of Examples 1A to 6A and Comparative Example 1A. And these noise suppression layers were stuck at 100 degreeC on the plate-like peeling layer which consists of polymethyl pentene (made by Mitsui Chemicals, "TPX DX231"), respectively. Then, according to JIS G 3469, the peel strength B measured when the noise suppression layer is peeled from one end at a speed of 300 mm / min at 25 ° C. in the direction of 90 ° at 25 ° C. It measured using an A & D company "TENSILON RTG-1310"). The measurement results are shown in Table 1.
  • a Si substrate (pseudo semiconductor element) 10 mm long ⁇ 10 mm wide ⁇ 0.7 mm thick equipped. Thereafter, the Si substrate was subjected to heating and compression treatment under the conditions of 190 ° C./150 N / 20 sec.
  • the Si substrate is sealed by the sealing portion by compression molding.
  • a sealed semiconductor encapsulation was formed.
  • the condition for compression molding was 175 ° C./5 MPa / 5 min.
  • the films for shielding an electromagnetic wave of Examples 1A to 6A and Comparative Example 1A were respectively disposed on the semiconductor sealing connection in which the grooves were formed. Thereafter, using a vacuum pressure type laminator, by applying pressure of 2 MPa, temperature of 170 ° C., and time of 240 seconds so that the film for electromagnetic shielding and the electronic component sealing body approach each other under vacuum atmosphere. And an electromagnetic shielding film was attached to the semiconductor sealing assembly.
  • the peeling layer is peeled from the film for an electromagnetic wave shield attached to the semiconductor sealing assembly by holding one end of the peeling layer, and the ease of peeling of the peeling layer in this case is based on the evaluation criteria shown below. evaluated.
  • the evaluation results are shown in Table 1.
  • the peel strengths A and B satisfied the relationship of 1 ⁇ A / B.
  • the peeling layer can be peeled from the film for an electromagnetic wave shield stuck to the semiconductor sealing connection, without generating the resin residue originating in the noise suppression layer in the peeling layer, and the electronic component sealing body It was possible to form a noise suppression layer.
  • the peel strengths A and B do not satisfy the relationship of 1 ⁇ A / B, and due to this, from the film for an electromagnetic wave shield attached to the semiconductor sealing connection.
  • a resin residue derived from the noise suppression layer was generated in the peeling layer, and it was not possible to form a noise suppression layer having a uniform film thickness on the electronic component package.
  • the film for electromagnetic wave shields which can provide a noise suppression layer in an electronic component sealing body by a comparatively easy method can be provided. Furthermore, by using the film for electromagnetic wave shielding, a plurality of electronic component sealing bodies can be manufactured collectively from one electronic component sealing connection body. As a result, the productivity of the electronic component package and the electronic device can be improved. Thus, the present invention has industrial applicability.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Laminated Bodies (AREA)

Abstract

La présente invention concerne un film de blindage contre les ondes électromagnétiques (300), conçu pour former une couche de suppression de bruit (3) sur un corps d'étanchéité de composant électronique (290). Le film de blindage contre les ondes électromagnétiques (300) est pourvu d'une couche pelable (1) (couche de substrat) et de la couche de suppression de bruit (3) et configuré pour satisfaire une relation prédéterminée par rapport à la résistance au pelage de la couche de suppression de bruit (3).
PCT/JP2018/030380 2017-08-31 2018-08-15 Film de blindage contre les ondes électromagnétiques WO2019044512A1 (fr)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112533351A (zh) * 2019-09-19 2021-03-19 宏启胜精密电子(秦皇岛)有限公司 电路板及其制作方法
WO2021090867A1 (fr) * 2019-11-05 2021-05-14 積水化学工業株式会社 Stratifié de traitement de semi-conducteur, bande adhésive de traitement de semi-conducteur et procédé de fabrication de dispositif à semi-conducteur
TWI728480B (zh) * 2019-03-26 2021-05-21 新加坡商Ｐｅｐ創新私人有限公司 封裝方法及面板組件

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011124413A (ja) * 2009-12-11 2011-06-23 Murata Mfg Co Ltd 電子部品モジュールの製造方法及び電子部品モジュール
WO2013183671A1 (fr) * 2012-06-08 2013-12-12 日立化成株式会社 Procédé de fabrication de dispositif semi-conducteur
WO2014027673A1 (fr) * 2012-08-16 2014-02-20 住友ベークライト株式会社 Pellicule de blindage em et procédé permettant de couvrir un composant électronique
JP2015162636A (ja) * 2014-02-28 2015-09-07 東洋インキＳｃホールディングス株式会社 電子部品モジュールの製造方法
WO2015186624A1 (fr) * 2014-06-02 2015-12-10 タツタ電線株式会社 Film adhésif électroconducteur, carte de circuit imprimé et dispositif électronique
JP2017143210A (ja) * 2016-02-12 2017-08-17 住友ベークライト株式会社 電子部品封止体の製造方法、電子装置の製造方法
JP6183568B1 (ja) * 2017-02-10 2017-08-23 東洋インキＳｃホールディングス株式会社 部品搭載基板の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02178042A (ja) * 1988-12-28 1990-07-11 Somar Corp 熱硬化性樹脂フイルム
JP2009289840A (ja) * 2008-05-28 2009-12-10 Toyo Ink Mfg Co Ltd 電磁波シールド性接着フィルム
JP2016039237A (ja) * 2014-08-07 2016-03-22 日本合成化学工業株式会社 磁性体の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011124413A (ja) * 2009-12-11 2011-06-23 Murata Mfg Co Ltd 電子部品モジュールの製造方法及び電子部品モジュール
WO2013183671A1 (fr) * 2012-06-08 2013-12-12 日立化成株式会社 Procédé de fabrication de dispositif semi-conducteur
WO2014027673A1 (fr) * 2012-08-16 2014-02-20 住友ベークライト株式会社 Pellicule de blindage em et procédé permettant de couvrir un composant électronique
JP2015162636A (ja) * 2014-02-28 2015-09-07 東洋インキＳｃホールディングス株式会社 電子部品モジュールの製造方法
WO2015186624A1 (fr) * 2014-06-02 2015-12-10 タツタ電線株式会社 Film adhésif électroconducteur, carte de circuit imprimé et dispositif électronique
JP2017143210A (ja) * 2016-02-12 2017-08-17 住友ベークライト株式会社 電子部品封止体の製造方法、電子装置の製造方法
JP6183568B1 (ja) * 2017-02-10 2017-08-23 東洋インキＳｃホールディングス株式会社 部品搭載基板の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI728480B (zh) * 2019-03-26 2021-05-21 新加坡商Ｐｅｐ創新私人有限公司 封裝方法及面板組件
US11062917B2 (en) 2019-03-26 2021-07-13 Pep Innovation Pte. Ltd. Packaging method, panel assembly, wafer package and chip package
US11538695B2 (en) 2019-03-26 2022-12-27 Pep Innovation Pte. Ltd. Packaging method, panel assembly, wafer package and chip package
CN112533351A (zh) * 2019-09-19 2021-03-19 宏启胜精密电子(秦皇岛)有限公司 电路板及其制作方法
CN112533351B (zh) * 2019-09-19 2022-11-15 宏启胜精密电子(秦皇岛)有限公司 电路板及其制作方法
WO2021090867A1 (fr) * 2019-11-05 2021-05-14 積水化学工業株式会社 Stratifié de traitement de semi-conducteur, bande adhésive de traitement de semi-conducteur et procédé de fabrication de dispositif à semi-conducteur

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