WO2019041901A1 - 柔性显示面板及其制作方法 - Google Patents

柔性显示面板及其制作方法 Download PDF

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Publication number
WO2019041901A1
WO2019041901A1 PCT/CN2018/088107 CN2018088107W WO2019041901A1 WO 2019041901 A1 WO2019041901 A1 WO 2019041901A1 CN 2018088107 W CN2018088107 W CN 2018088107W WO 2019041901 A1 WO2019041901 A1 WO 2019041901A1
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Prior art keywords
layer
sio
display panel
buffer layer
thickness
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PCT/CN2018/088107
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English (en)
French (fr)
Inventor
袁波
黄根茂
崔志远
胡坤
徐琳
李勃
Original Assignee
昆山工研院新型平板显示技术中心有限公司
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Application filed by 昆山工研院新型平板显示技术中心有限公司 filed Critical 昆山工研院新型平板显示技术中心有限公司
Priority to KR1020197033418A priority Critical patent/KR102380403B1/ko
Priority to JP2019564010A priority patent/JP2020521175A/ja
Priority to EP18850546.5A priority patent/EP3614431A4/en
Publication of WO2019041901A1 publication Critical patent/WO2019041901A1/zh
Priority to US16/355,407 priority patent/US10756126B2/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a flexible display panel and a method of fabricating the same.
  • Flexible foldable displays such as the Organic Light Emitting Display (OLED)
  • OLED Organic Light Emitting Display
  • the current solution is to protect the metal lines with an insulating/metal/insulation/flattening layer structure.
  • the Young's modulus of the insulating layer is large, and it is prone to breakage when bent, resulting in breakage of the metal wire.
  • the embodiments of the present invention provide a flexible display panel and a manufacturing method thereof, which can improve the bending ability of the flexible display panel.
  • One aspect of the present invention provides a flexible display panel including: a flexible substrate; a buffer layer formed on the flexible substrate; and a metal layer formed on the buffer layer, wherein the flexible layer
  • the display panel includes a display area and a bending area in a lateral direction
  • the buffer layer includes a first portion corresponding to the display area, and a second portion corresponding to the bending area
  • the thickness of the first portion is less than the thickness of the second portion.
  • the first portion includes a first SIO X layer, a SIN X layer, and a second SIO X layer disposed in sequence, wherein the first SIO X layer is disposed on the flexible substrate, the second Part includes the first SIO X layer.
  • the flexible display panel further includes a planarization layer and a passivation layer formed between the planarization layer and the metal layer, and the material of the passivation layer and the planarization layer is an organic material.
  • the material of the buffer layer is an inorganic insulating material.
  • the second portion of the buffer layer does not include the SIN X layer and the second SIO X layer.
  • the thickness of the layer of the first X SIO said second portion is less than or equal to the thickness of the layer of the first X SIO first portion.
  • the flexible display panel further includes a transition region in a lateral direction, the transition region is located between the display region and the bending region, and the buffer layer further includes a third portion, the first The three portions correspond to the transition region, and the third portion gradually decreases in width in a direction from the flexible substrate toward the metal layer.
  • the first portion has a thickness of 300 nm to 1400 nm and the second portion has a thickness of 10 nm to 100 nm.
  • the second portion has a thickness of 10 nm to 30 nm.
  • One aspect of the present invention provides a method of fabricating a flexible display panel including a display area and a bend area in a lateral direction, the method comprising: providing a flexible substrate; forming a buffer layer on the flexible substrate; a portion of the buffer layer corresponding to the display area as a first portion, and etching a portion of the buffer layer corresponding to the bending region to obtain a second portion, wherein the thickness of the second portion is smaller than the first portion a portion of the thickness; a metal layer is formed on the buffer layer.
  • the forming a buffer layer on the flexible substrate comprises: sequentially forming a first SIO X layer, a SIN X layer, and a second SIO X layer on the flexible substrate, wherein the pair of the buffer layer Etching the portion corresponding to the bend region to obtain the second portion, comprising: etching a second SIO X layer and a SIN X layer corresponding to the bend region of the buffer layer to expose the first portion of the second portion SIO X layer.
  • the etching the second SIO X layer and the SIN X layer corresponding to the bending region of the buffer layer to expose the first SIO X layer of the second portion further etching the X SIO first two parts, so that the thickness of the layer of the first X SIO said second portion is less than or equal to the thickness of the layer of the first X SIO first portion.
  • the flexible display panel further includes a transition region in a lateral direction, the transition region being located between the display region and the bending region, the method further comprising: corresponding to the buffer layer A portion of the transition region is etched to obtain a third portion, wherein the third portion gradually decreases in width in a direction from the flexible substrate toward the metal layer.
  • the second portion has a thickness of 10 nm to 30 nm.
  • the method further includes: forming a passivation layer on the metal layer, and forming a planarization layer on the passivation layer, the passivation layer and the material of the planarization layer being an organic material
  • the material of the buffer layer is an inorganic insulating material.
  • the method for fabricating a flexible display panel provided by the embodiment of the present invention improves the thickness of the buffer layer of the bending region by less than the thickness of the buffer layer of the display region by etching the buffer layer of the bending region before forming the metal layer.
  • the bending ability of the flexible display panel improves the thickness of the buffer layer of the bending region by less than the thickness of the buffer layer of the display region by etching the buffer layer of the bending region before forming the metal layer.
  • FIG. 1 is a schematic cross-sectional view of a flexible display panel according to an embodiment of the invention.
  • FIG. 2 is a cross-sectional view of a flexible display panel according to another embodiment of the present invention.
  • FIG. 3 is a schematic flow chart of a method for fabricating a flexible display panel according to an embodiment of the present invention.
  • FIG. 4 is a schematic flowchart of a method for fabricating a flexible display panel according to another embodiment of the present invention.
  • FIG. 1 is a schematic cross-sectional view of a flexible display panel 100 according to an embodiment of the invention.
  • the flexible display panel 100 includes a flexible substrate 101; a buffer layer 102 formed on the flexible substrate 101; and a metal layer 103 formed on the buffer layer 102.
  • the flexible display panel 100 includes a display area 1 and a bending area 3 in the lateral direction.
  • the buffer layer 102 includes a first portion corresponding to the display area 1, and a second portion corresponding to the bending area 3, the second portion The thickness is less than the thickness of the first portion.
  • the buffer layer of the bending region is etched before the metal layer is formed, so that the thickness of the buffer layer of the bending region is smaller than the thickness of the buffer layer of the display region, thereby improving the bending of the flexible display panel. ability.
  • the first portion of the buffer layer 102 may include a first SIO X layer 106, a SIN X layer 107, and a second SIO X layer 108, which are sequentially disposed, and the second portion of the buffer layer 102 includes the first SIO X layer And does not include the SIN X layer and the second SIO X layer.
  • the buffer layer in the display area of the flexible display panel, is provided with a first SIO X layer 106, a SIN X layer 107, and a second SIO X layer 108 (ie, the first portion) in this order from bottom to top.
  • the buffer layer may be the first SIO X layer 109 (ie, the second portion) that is removed by removing the SIN X layer and the second SIO X layer.
  • the first SIO X layer 106 and the first SIO X layer 109 are in the same layer.
  • the first portion of the buffer layer 102 may include at least one of the first SIO X layer, the SIN X layer, and the second SIO X layer, and embodiments of the present invention do not limit the order in which the layers are disposed.
  • the buffer layer 102 can also be other silicon compounds or other materials that can be used as a buffer layer.
  • the thickness of the first SIO X layer 109 of the second portion is less than or equal to the thickness of the first SIO X layer 106 of the first portion.
  • the thickness of the first portion may be from 300 nm to 1400 nm.
  • the thickness of the second portion is from 10 nm to 100 nm.
  • the second portion has a thickness of 10 nm to 30 nm.
  • the flexible display panel 100 further includes a planarization layer 105.
  • the flexible display panel 100 includes a flexible substrate 101, and a buffer layer 102, a metal layer 103, and a flat layer 105 which are sequentially formed on the flexible substrate 101.
  • the thickness of the buffer layer of the bending zone is smaller than the thickness of the buffer layer of the display zone.
  • the material of the planarization layer 105 is an organic material.
  • the buffer layer 102 may be, for example, an inorganic insulating material.
  • the inorganic insulating material may be an inorganic silicon material, and specifically may be silicon nitride or silicon oxide. In general, when an inorganic silicon material is used as the buffer layer, for example, when the flexible display panel is bent, the metal wire in the metal layer is liable to be broken.
  • the thinner the thickness of the buffer layer in the bending zone the stronger the bending ability of the metal layer in the bending zone.
  • the metal layer of the bending zone is located between the organic layers, and the risk of the metal layer of the bending zone being broken is greatly reduced when the bending is performed.
  • the bending ability of the flexible screen body bending zone can be increased.
  • the flexible substrate 101 further includes a transition region 2 in the lateral direction.
  • the transition zone 2 is located between the display zone 1 and the bend zone 3
  • the buffer layer 102 further includes a third portion, the third portion corresponding to the transition zone 2, and the third portion gradually increasing in width from the flexible substrate 101 toward the metal layer 103. cut back.
  • the third portion has a thickness of 300 nm to 700 nm.
  • the role of the transition zone 2 is to reduce the risk of breakage of the metal layer when climbing the slope.
  • the thickness of the third part is thinned in order to reduce the risk of the metal layer being broken during bending.
  • the metal layer 103 may be a metal line.
  • the flexible display panel 100 includes a flexible substrate 101; a buffer layer 102 formed on the flexible substrate 101; a metal layer 103 formed on the buffer layer 102, a passivation layer 104, and a planarization layer 105, and the passivation layer 104 is disposed on the planarization layer Between 105 and metal layer 103.
  • the flexible display panel 100 includes a display area 1 and a bending area 3 in the lateral direction.
  • the buffer layer 102 includes a first portion corresponding to the display area 1, and a second portion corresponding to the bending area 3, the second portion The thickness is less than the thickness of the first portion.
  • the buffer layer of the bending region is etched before the metal layer is formed, so that the thickness of the buffer layer of the bending region is smaller than the thickness of the buffer layer of the display region, thereby improving the bending of the flexible display panel. ability.
  • the first portion of the buffer layer 102 may include a first SIO X layer 106, a SIN X layer 107, and a second SIO X layer 108, which are sequentially disposed, and the second portion of the buffer layer 102 includes the first SIO X layer And does not include the SIN X layer and the second SIO X layer.
  • the buffer layer in the display area of the flexible display panel, is provided with a first SIO X layer 106, a SIN X layer 107, and a second SIO X layer 108 (ie, the first portion) in this order from bottom to top.
  • the buffer layer may be the first SIO X layer 109 (ie, the second portion) that is removed by removing the SIN X layer and the second SIO X layer.
  • the first SIO X layer 106 and the first SIO X layer 109 are in the same layer.
  • the first portion of the buffer layer 102 may include at least one of the first SIO X layer, the SIN X layer, and the second SIO X layer, and embodiments of the present invention do not limit the order in which the layers are disposed.
  • the buffer layer 102 can also be other silicon compounds or other materials that can be used as a buffer layer.
  • the thickness of the first SIO X layer 109 of the second portion is less than or equal to the thickness of the first SIO X layer 106 of the first portion.
  • the thickness of the first portion may be from 300 nm to 1400 nm.
  • the thickness of the second portion is from 10 nm to 100 nm.
  • the second portion has a thickness of 10 nm to 30 nm.
  • the flexible substrate 101 further includes a transition region 2 in the lateral direction.
  • the transition zone 2 is located between the display zone 1 and the bend zone 3
  • the buffer layer 102 further includes a third portion, the third portion corresponding to the transition zone 2, and the third portion gradually increasing in width from the flexible substrate 101 toward the metal layer 103. cut back.
  • the third portion has a thickness of 300 nm to 700 nm.
  • the role of the transition zone 2 is to reduce the risk of breakage of the metal layer when climbing the slope.
  • the thickness of the third part is thinned in order to reduce the risk of the metal layer being broken during bending.
  • the metal layer 103 may be a metal line.
  • the material of the passivation layer 104 and the planarization layer 105 is an organic material.
  • the buffer layer 102 may be, for example, an inorganic insulating material.
  • the inorganic insulating material may be an inorganic silicon material, and specifically may be silicon nitride or silicon oxide.
  • the metal wire in the metal layer is liable to be broken.
  • the thinner the thickness of the buffer layer in the bending zone the stronger the bending ability of the metal layer in the bending zone.
  • the metal layer of the bending zone is located between the organic layers, and the risk of the metal layer of the bending zone being broken is greatly reduced when the bending is performed.
  • the bending ability of the flexible screen body bending zone can be increased.
  • FIG. 3 is a schematic flowchart of a method for fabricating a flexible display panel according to an embodiment of the present invention.
  • the flexible display panel includes a display area and a bending area in the lateral direction.
  • the preparation method of FIG. 3 is used to prepare the flexible display panel of the embodiment of FIGS. 1 and 2.
  • the preparation method of Fig. 3 includes the following.
  • 301 forming a buffer layer on the flexible substrate.
  • the buffer layer of the bending region is etched before the metal layer is formed, so that the thickness of the buffer layer of the bending region is smaller than the thickness of the buffer layer of the display region, thereby improving the bending of the flexible display panel. ability.
  • the first SIO X layer, the SIN X layer, and the second SIO X layer may be sequentially formed on the flexible substrate, and the second corresponding to the bending region of the buffer layer may be etched SIO X layer and SIN X layer to expose the first SIO X layer of the second part.
  • the first SIO X of the second portion may be further etched such that the thickness of the first SIO X layer of the second portion is less than or equal to the first SIO X of the first portion. The thickness of the layer.
  • the flexible display panel further includes a transition region in the lateral direction, and the transition region is located between the display region and the bending region.
  • the preparation method of FIG. 3 further includes: etching a portion of the buffer layer corresponding to the transition region to obtain The third portion, wherein the third portion gradually decreases in width in a direction from the flexible substrate toward the metal layer.
  • the second portion has a thickness of 10 nm to 30 nm.
  • the metal layer comprises a metal line.
  • FIG. 4 is a schematic flowchart of a method for fabricating a flexible display panel according to an embodiment of the present invention.
  • the preparation method of Fig. 4 is an example of the patterning method of Fig. 3 for preparing the flexible display panel of the embodiment of Figs. 1 and 2.
  • the preparation method of the figure includes the following.
  • the metal layer may cover the interlayer dielectric layer 112 and the second and third portions of the buffer layer.
  • the material of the planarization layer and the passivation layer is an organic material.
  • the buffer layer may be, for example, an inorganic insulating material.
  • the inorganic insulating material may be an inorganic silicon material, and specifically may be silicon nitride or silicon oxide.
  • the metal wire in the metal layer is liable to be broken.
  • the thinner the thickness of the buffer layer in the bending zone the stronger the bending ability of the metal layer in the bending zone.
  • the metal layer of the bending zone is located between the organic layers, and the risk of the metal layer of the bending zone being broken is greatly reduced when the bending is performed.
  • the thinner inorganic layer prevents organic materials from contaminating the chamber during etching and deposition.
  • the buffer layer of the bending region is etched before the metal layer is formed, so that the thickness of the buffer layer of the bending region is smaller than the thickness of the buffer layer of the display region, thereby improving the bending of the flexible display panel. ability.

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Abstract

本发明提供了一种柔性显示面板及其制作方法。所述柔性显示面板包括柔性基板；形成于所述柔性基板上的缓冲层；和形成于所述缓冲层上的金属层，其中，所述柔性显示面板在横向上包括显示区和弯折区，所述缓冲层包括第一部分和第二部分，所述第一部分对应于所述显示区，所述第二部分对应于所述弯折区，所述第二部分的厚度小于所述第一部分的厚度。

Description

柔性显示面板及其制作方法
本发明要求2017年8月31日递交的中国专利申请No.CN 201710773133.6的优先权，通过引用将其全部内容并入本文。
技术领域
本发明涉及显示器技术领域，具体涉及一种柔性显示面板及其制作方法。
发明背景
柔性可折叠显示器，例如有机发光显示器(Organic Light Emitting Display，OLED)，可以为用户带来全新的视觉体验。但这种显示器在多次弯折后，容易产生金属线断裂问题，从而影响显示。
目前的解决方法是采用绝缘层/金属层/绝缘层/平坦化层结构对金属线进行保护。但绝缘层的杨氏模量较大，在弯折时容易出现断裂，从而导致金属线断裂。
发明内容
有鉴于此，本发明实施例提供了一种柔性显示面板及其制作方法，能够提高柔性显示面板的弯折能力。
本发明的一个方面提供一种柔性显示面板，所述柔性显示面板包括：柔性基板；形成于所述柔性基板上的缓冲层；和形成于所述缓冲层上的金属层，其中，所述柔性显示面板在横向上包括显示区和弯折区，所述缓冲层包括第一部分和第二部分，所述第一部分对应于所述显示区，所述第二部分对应于所述弯折区，所述第一部分的厚度小于所述第二部分的厚度。
在一个实施例中，所述第一部分包括依次设置的第一SIO X层、SIN X层和第二SIO X层，其中所述第一SIO X层设置在所述柔性基板上，所述第二部分包括第一SIO X层。
在一个实施例中，所述柔性显示面板进一步包括平坦化层及形成于所述平坦化层与金属层之间的钝化层，所述钝化层和平坦化层的材料为有机材料，所述缓冲层的材料是无机绝缘材料。
在一个实施例中，所述缓冲层的第二部分不包括所述SIN X层和所述第二SIO X层。
在一个实施例中，所述第二部分的第一SIO X层的厚度小于或等于所述第一部分的第一SIO X层的厚度。
在一个实施例中，所述柔性显示面板在横向上还包括过渡区，所述过渡区位 于所述显示区和所述弯折区之间，所述缓冲层还包括第三部分，所述第三部分对应于所述过渡区，所述第三部分在从所述柔性基板朝向所述金属层的方向上宽度逐渐减少。
在一个实施例中，所述第一部分的厚度为300nm至1400nm，所述第二部分的厚度为10nm至100nm。
在一个实施例中，所述第二部分的厚度为10nm至30nm。
本发明的一个方面提供了一种柔性显示面板的制作方法，所述柔性显示面板在横向上包括显示区和弯折区，所述方法包括：提供柔性基板；在柔性基板上形成缓冲层；令所述缓冲层与所述显示区对应的部分作为第一部分，对所述缓冲层与所述弯折区对应的部分进行蚀刻，得到第二部分，令所述第二部分的厚度小于所述第一部分的厚度；在所述缓冲层上形成金属层。
在一个实施例中，所述在柔性基板上形成缓冲层包括：在所述柔性基板上依次形成第一SIO X层、SIN X层和第二SIO X层，其中，所述对所述缓冲层与所述弯折区对应的部分进行蚀刻得到第二部分，包括：蚀刻所述缓冲层的与弯折区对应的第二SIO X层和SIN X层，以露出所述第二部分的第一SIO X层。
在一个实施例中，所述蚀刻所述缓冲层的与弯折区对应的第二SIO X层和SIN X层，以露出所述第二部分的第一SIO X层之后，进一步蚀刻所述第二部分的第一SIO X，使得所述第二部分的第一SIO X层的厚度小于或等于所述第一部分的第一SIO X层的厚度。
在一个实施例中，所述柔性显示面板在横向上还包括过渡区，所述过渡区位于所述显示区和所述弯折区之间，所述方法还包括：对所述缓冲层对应于所述过渡区的部分进行蚀刻，得到第三部分，其中所述第三部分在从所述柔性基板朝向所述金属层的方向上宽度逐渐减少。
在一个实施例中，所述第二部分的厚度为10nm至30nm。
在一个实施例中，所述方法进一步包括：在所述金属层上形成钝化层，并在所述钝化层上形成平坦化层，所述钝化层和平坦化层的材料为有机材料，所述缓冲层的材料是无机绝缘材料。
本发明实施例提供的柔性显示面板的制作方法，通过在形成金属层之前对弯折区的缓冲层进行蚀刻，使得弯折区的缓冲层的厚度小于显示区的缓冲层的厚度，从而提高了柔性显示面板的弯折能力。
附图简要说明
图1所示为本发明一实施例提供的一种柔性显示面板的示意性剖面图。
图2所示为本发明另一实施例提供的一种柔性显示面板的剖面图。
图3为本发明一个实施例的柔性显示面板的制备方法的示意性流程图。
图4为本发明另一实施例的柔性显示面板的制备方法的示意性流程图。
实施本发明的方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
图1所示为本发明一实施例提供的一种柔性显示面板100的示意性剖面图。
柔性显示面板100包括柔性基板101；形成于柔性基板101上的缓冲层102；和形成于缓冲层102上的金属层103。柔性显示面板100在横向上包括显示区1和弯折区3，缓冲层102包括第一部分和第二部分，第一部分对应于显示区1，第二部分对应于弯折区3，第二部分的厚度小于第一部分的厚度。
根据本发明的实施例，通过在形成金属层之前对弯折区的缓冲层进行蚀刻，使得弯折区的缓冲层的厚度小于显示区的缓冲层的厚度，从而提高了柔性显示面板的弯折能力。
根据本发明的实施例，缓冲层102的第一部分可以包括依次设置的第一SIO X层106、SIN X层107和第二SIO X层108，缓冲层102的第二部分包括第一SIO X层，并且不包括SIN X层和第二SIO X层。
参见图1，在柔性显示面板的显示区，缓冲层从下向上依次设置有第一SIO X层106、SIN X层107、第二SIO X层108(即第一部分)。在柔性显示面板的弯折区，缓冲层可以是将SIN X层和第二SIO X层去掉而剩下的第一SIO X层109(即第二部分)。第一SIO X层106和第一SIO X层109处于同一层。
应理解，缓冲层102的第一部分可以包括第一SIO X层、SIN X层和第二SIO X层中的至少一层，而且本发明的实施例对各层的设置顺序不作限制。可替代地，缓冲层102也可以是其它硅化合物或者其它可以用作缓冲层的材料。
进一步地，第二部分的第一SIO X层109的厚度小于或等于第一部分的第一SIO X层106的厚度。例如，第一部分的厚度可以为300nm至1400nm。第二部分的厚度为10nm至100nm。
优选地，第二部分的厚度为10nm至30nm。
可选地，作为另一实施例，柔性显示面板100还包括平坦化层105。
例如，该柔性显示面板100包括柔性基板101、以及在柔性基板101上依次形成的缓冲层102、金属层103和平坦层105。弯折区的缓冲层的厚度小于显示区的缓冲层的厚度。平坦化层105的材料为有机材料。缓冲层102例如可以是无机 绝缘材料。例如，无机绝缘材料可以为无机硅材料，具体可以为氮化硅或氧化硅等。通常情况下，以无机硅材料作为缓冲层时，例如，在柔性显示面板弯折时，容易导致金属层中的金属线断裂。通常情况下，弯折区的缓冲层的厚度越薄，弯折区的金属层的弯折能力越强。当弯折区的缓冲层的厚度非常小时，弯折区的金属层位于有机层之间，在进行弯折时，弯折区的金属层被折断的风险大大降低。通过减小弯折区的缓冲层的厚度，可以增加柔性屏体弯折区的弯折能力。
可选地，作为另一实施例，该柔性基板101在横向上还包括过渡区2。过渡区2位于显示区1和弯折区3之间，缓冲层102还包括第三部分，第三部分对应于过渡区2，第三部分在从柔性基板101朝向金属层103的方向上宽度逐渐减少。第三部分的厚度为300nm至700nm。过渡区2的作用是降低金属层爬坡时断线的风险，第三部分的厚度变薄是为了降低金属层在弯折时断线的风险。
根据本发明的实施例，金属层103可以是金属线。
图2所示为本发明另一实施例提供的一种柔性显示面板200的剖面图。柔性显示面板100包括柔性基板101；形成于柔性基板101上的缓冲层102；形成于缓冲层102上的金属层103、钝化层104和平坦化层105，钝化层104设置在平坦化层105与金属层103之间。柔性显示面板100在横向上包括显示区1和弯折区3，缓冲层102包括第一部分和第二部分，第一部分对应于显示区1，第二部分对应于弯折区3，第二部分的厚度小于第一部分的厚度。
根据本发明的实施例，通过在形成金属层之前对弯折区的缓冲层进行蚀刻，使得弯折区的缓冲层的厚度小于显示区的缓冲层的厚度，从而提高了柔性显示面板的弯折能力。
根据本发明的实施例，缓冲层102的第一部分可以包括依次设置的第一SIO X层106、SIN X层107和第二SIO X层108，缓冲层102的第二部分包括第一SIO X层，并且不包括SIN X层和第二SIO X层。
参见图2，在柔性显示面板的显示区，缓冲层从下向上依次设置有第一SIO X层106、SIN X层107、第二SIO X层108(即第一部分)。在柔性显示面板的弯折区，缓冲层可以是将SIN X层和第二SIO X层去掉而剩下的第一SIO X层109(即第二部分)。第一SIO X层106和第一SIO X层109处于同一层。
应理解，缓冲层102的第一部分可以包括第一SIO X层、SIN X层和第二SIO X层中的至少一层，而且本发明的实施例对各层的设置顺序不作限制。可替代地，缓冲层102也可以是其它硅化合物或者其它可以用作缓冲层的材料。
进一步地，第二部分的第一SIO X层109的厚度小于或等于第一部分的第一SIO X层106的厚度。例如，第一部分的厚度可以为300nm至1400nm。第二部分的厚度为10nm至100nm。
优选地，第二部分的厚度为10nm至30nm。
可选地，作为另一实施例，该柔性基板101在横向上还包括过渡区2。过渡区2位于显示区1和弯折区3之间，缓冲层102还包括第三部分，第三部分对应于过渡区2，第三部分在从柔性基板101朝向金属层103的方向上宽度逐渐减少。第三部分的厚度为300nm至700nm。过渡区2的作用是降低金属层爬坡时断线的风险，第三部分的厚度变薄是为了降低金属层在弯折时断线的风险。
根据本发明的实施例，金属层103可以是金属线。
钝化层104和平坦化层105的材料为有机材料。缓冲层102例如可以是无机绝缘材料。例如，无机绝缘材料可以为无机硅材料，具体可以为氮化硅或氧化硅等。通常情况下，以无机硅材料作为缓冲层时，例如，在柔性显示面板弯折时，容易导致金属层中的金属线断裂。通常情况下，弯折区的缓冲层的厚度越薄，弯折区的金属层的弯折能力越强。当弯折区的缓冲层的厚度非常小时，弯折区的金属层位于有机层之间，在进行弯折时，弯折区的金属层被折断的风险大大降低。通过减小弯折区的缓冲层的厚度，可以增加柔性屏体弯折区的弯折能力。
图3为本发明实施例的柔性显示面板的制备方法的示意性流程图。柔性显示面板在横向上包括显示区和弯折区。图3的制备方法用于制备图1和图2的实施例中的柔性显示面板。图3的制备方法包括如下内容。
301：在柔性基板上形成缓冲层。
302：对缓冲层与弯折区对应的部分进行蚀刻，得到第二部分，其中，缓冲层与显示区对应的部分作为第一部分，第二部分的厚度小于第一部分的厚度。
303：在缓冲层上形成金属层。
根据本发明的实施例，通过在形成金属层之前对弯折区的缓冲层进行蚀刻，使得弯折区的缓冲层的厚度小于显示区的缓冲层的厚度，从而提高了柔性显示面板的弯折能力。
根据本发明的实施例，在形成缓冲层时，可以在柔性基板上依次形成第一SIO X层、SIN X层和第二SIO X层，并且可以蚀刻缓冲层的与弯折区对应的第二SIO X层和SIN X层，以露出第二部分的第一SIO X层。
可选地，作为另一实施例，在形成缓冲层时，可以进一步蚀刻第二部分的第一SIO X，使得第二部分的第一SIO X层的厚度小于或等于第一部分的第一SIO X层的厚度。
在一个实施例中，柔性显示面板在横向上还包括过渡区，过渡区位于显示区和弯折区之间，图3的制备方法还包括：对缓冲层对应于过渡区的部分进行蚀刻，得到第三部分，其中第三部分在从柔性基板朝向金属层的方向上宽度逐渐减少。
根据本发明的实施例，第二部分的厚度为10nm至30nm。
根据本发明的实施列，金属层包括金属线。
图4为本发明实施例的柔性显示面板的制备方法的示意性流程图。图4的制 备方法是图3的制图方法的例子，用于制备图1和图2的实施例中的柔性显示面板。图的制备方法包括如下内容。
401：在柔性基板上形成缓冲层。
402：在整个柔性基板上依次形成第一SIO X层、SIN X层和第二SIO X层。
403：蚀刻缓冲层的与弯折区对应的第二SIO X层和SIN X层，以露出第二部分的第一SIO X层。
404：蚀刻第二部分的第一SIO X，使得第二部分的第一SIO X层的厚度小于或等于第一部分的第一SIO X层的厚度。
405：对缓冲层对应于过渡区的部分进行蚀刻，得到第三部分，其中第三部分在从柔性基板朝向金属层的方向上宽度逐渐减少。
406：在缓冲层上形成栅极绝缘层110、电容绝缘层111、层间介电层112。
407：在层间介电层112上形成金属层。即金属层可以覆盖层间介电层112以及缓冲层的第二部分和第三部分。
408：在金属层上形成钝化层。
409：在钝化层上形成平坦化层。
应理解，408和409是可选的。平坦化层和钝化层的材料为有机材料。缓冲层例如可以是无机绝缘材料。例如，无机绝缘材料可以为无机硅材料，具体可以为氮化硅或氧化硅等。通常情况下，以无机硅材料作为缓冲层时，例如，在柔性显示面板弯折时，容易导致金属层中的金属线断裂。通常情况下，弯折区的缓冲层的厚度越薄，弯折区的金属层的弯折能力越强。当弯折区的缓冲层的厚度非常小时，弯折区的金属层位于有机层之间，在进行弯折时，弯折区的金属层被折断的风险大大降低。同时，较薄的无机层可以防止刻蚀和沉积时有机材料污染腔室。通过减小弯折区的缓冲层的厚度，可以增加柔性屏体弯折区的弯折能力。此外，在沉积金属层之前对弯折区的缓冲层进行蚀刻，该工艺流程较为简单，从而节省成本。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换等，均应包含在本发明的保护范围之内。
本发明的柔性显示面板，通过在形成金属层之前对弯折区的缓冲层进行蚀刻，使得弯折区的缓冲层的厚度小于显示区的缓冲层的厚度，从而提高了柔性显示面板的弯折能力。

Claims (15)

  1. 一种柔性显示面板，所述柔性显示面板包括：
    柔性基板；
    形成于所述柔性基板上的缓冲层，所述缓冲层包括第一部分和第二部分；和形成于所述缓冲层上的金属层，
    其中，所述柔性显示面板在横向上包括显示区和弯折区，所述缓冲层的第一部分对应于所述显示区，所述缓冲层的第二部分对应于所述弯折区，所述缓冲层的第二部分的厚度小于所述第一部分的厚度。
  2. 根据权利要求1所述的柔性显示面板，其中，所述缓冲层的第一部分包括依次设置的第一SIO X层、SIN X层和第二SIO X层，其中所述第一SIO X层设置在所述柔性基板上，所述第二部分包括第一SIO X层。
  3. 根据权利要求2所述的柔性显示面板，其中，所述缓冲层的第二部分不包括所述SIN X层和所述第二SIO X层。
  4. 根据权利要求2所述的柔性显示面板，其中，所述第二部分的第一SIO X层的厚度小于或等于所述第一部分的第一SIO X层的厚度。
  5. 根据权利要求1至4中的任一项所述的柔性显示面板，其中，所述柔性显示面板在横向上还包括过渡区，所述过渡区位于所述显示区和所述弯折区之间，所述缓冲层还包括第三部分，所述第三部分对应于所述过渡区，所述第三部分在从所述柔性基板朝向所述金属层的方向上宽度逐渐减少。
  6. 根据权利要求1所述的柔性显示面板，其中，所述柔性显示面板进一步包括平坦化层及形成于所述平坦化层与金属层之间的钝化层。
  7. 根据权利要求6所述的柔性显示面板，其中，所述钝化层和所述平坦化层的材料为有机材料，所述缓冲层的材料是无机绝缘材料。
  8. 根据权利要求1所述的柔性显示面板，其中，所述第一部分的厚度为300nm至1400nm，所述第二部分的厚度为10nm至100nm。
  9. 根据权利要求1所述的柔性显示面板，其中，所述第二部分的厚度为10nm至30nm。
  10. 一种柔性显示面板的制作方法，所述柔性显示面板在横向上包括显示区和弯折区，所述方法包括：
    提供柔性基板；
    在柔性基板上形成缓冲层；令所述缓冲层与所述显示区对应的部分作为第一部分，对所述缓冲层与所述弯折区对应的部分进行蚀刻，得到第二部分，令所述第二部分的厚度小于所述第一部分的厚度；
    在所述缓冲层上形成金属层。
  11. 根据权利要求10所述的制作方法，其中，所述在柔性基板上形成缓冲层，包括：
    在所述柔性基板上依次形成第一SIO X层、SIN X层和第二SIO X层，
    其中，所述对所述缓冲层与所述弯折区对应的部分进行蚀刻得到第二部分，包括：
    蚀刻所述缓冲层的与弯折区对应的第二SIO X层和SIN X层，以露出所述第二部分的第一SIO X层。
  12. 根据权利要求11所述的制作方法，其中，所述蚀刻所述缓冲层的与弯折区对应的第二SIO X层和SIN X层，以露出所述第二部分的第一SIO X层之后，还包括：
    进一步蚀刻所述第二部分的第一SIO X，使得所述第二部分的第一SIO X层的厚度小于或等于所述第一部分的第一SIO X层的厚度。
  13. 根据权利要求10至12中的任一项所述的制作方法，其中，所述柔性显示面板在横向上还包括过渡区，所述过渡区位于所述显示区和所述弯折区之间，所述方法还包括：
    对所述缓冲层对应于所述过渡区的部分进行蚀刻，得到第三部分，其中所述第三部分在从所述柔性基板朝向所述金属层的方向上宽度逐渐减少。
  14. 根据权利要求10所述的制作方法，其中，所述第二部分的厚度为10nm至30nm。
  15. 根据权利要求10所述的制作方法，所述方法进一步包括：在所述金属层上形成钝化层，并在所述钝化层上形成平坦化层，所述钝化层和平坦化层的材料为有机材料，所述缓冲层的材料是无机绝缘材料。
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