WO2019033540A1 - 蒸镀坩埚及蒸镀系统 - Google Patents
蒸镀坩埚及蒸镀系统 Download PDFInfo
- Publication number
- WO2019033540A1 WO2019033540A1 PCT/CN2017/106818 CN2017106818W WO2019033540A1 WO 2019033540 A1 WO2019033540 A1 WO 2019033540A1 CN 2017106818 W CN2017106818 W CN 2017106818W WO 2019033540 A1 WO2019033540 A1 WO 2019033540A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- vapor deposition
- heating
- crucible
- sieve
- crucible body
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
Definitions
- the present invention relates to the field of equipment manufacturing technology, and in particular to an evaporation crucible and an evaporation system including the vapor deposition crucible.
- Organic Light-Emitting Diode displays a series of advantages such as high brightness, fast response, low energy consumption, and flexibility, which occupy an increasingly important position in today's flat panel display market, representing the development trend of next-generation displays; Organic light emitting diode and liquid crystal display (Liquid Compared with Crystal Display (LCD), the biggest advantage is that it can be made large, ultra-thin, flexible and transparent.
- the relatively mature process of OLED is to use small molecule evaporation method, but in the current evaporation process, the point source is usually cylindrical ⁇ and the heating wire is integrated heating, the temperature difference in the crucible is fixed, and the longitudinal length of the crucible is The longer the temperature difference is, the more difficult it is to control, so one-stage heating causes a problem of a large temperature difference between the upper end and the lower end of the crucible, thereby wasting material.
- the invention provides an evaporation ⁇ And an evaporation system including the vapor deposition ruthenium not only can effectively improve the problem of excessive lateral and longitudinal temperature difference of the vapor deposition ruthenium in the current evaporation system, but also can reduce the waste of the evaporation material and improve the utilization rate of the material. reduce manufacturing cost.
- the present invention provides an evaporation crucible comprising: a crucible body and at least two heating devices wound around the crucible body;
- the crucible body includes at least two cylindrical structures, each of the cylindrical structures having different diameters, and the crucible body is for holding an evaporation material;
- Each of the cylindrical structures is correspondingly provided with one heating device, and the heating device heats the evaporation material in the corresponding cylindrical structure;
- the heating device further includes a temperature measuring and controlling portion for respectively controlling the heating temperatures of the at least two heating regions.
- the vapor deposition crucible further includes at least two vapor deposition sieves, each of the vapor deposition sieves corresponding to one of the cylindrical structures, and the vapor deposition sieve is disposed on the same Corresponding to the top end of the cylindrical structure, the airflow of the vapor deposition material in the crucible body is more uniform.
- the vapor deposition screen and the crucible body are both made of titanium.
- each of the cylindrical structures is a heating region
- the crucible body includes three heating regions: a first heating region, a second heating region, and a third heating region, the first heating The region is the bottom region of the crucible body, the second heating region is the middle region of the crucible body, the third heating region is the upper region of the crucible body, and the diameter of the first heating region is ⁇ the second heating region Diameter ⁇ diameter of the third heating zone.
- the height of the first heating region accounts for 10 of the height of the crucible body. %, the height of the third heating zone accounts for 15% of the height of the crucible body.
- the vapor deposition screen comprises a first vapor deposition sieve, a second vapor deposition sieve and a third vapor deposition sieve, the first vapor deposition sieve and the first heating
- the second vapor deposition screen corresponds to the second heating region
- the third vapor deposition screen corresponds to the third heating region
- the area of the first vapor deposition sieve is The area of the second vapor deposition screen is ⁇ the area of the third vapor deposition screen.
- the diameter of the circular hole of the first vapor-deposited sieve piece > the diameter of the circular hole of the second vapor-deposited sieve piece > the diameter of the circular hole of the third vapor-deposited sieve piece.
- the heating device includes a first heating device, a second heating device, and a third heating device disposed in a longitudinal direction, each of the heating devices being disposed around its corresponding heating region, which can be realized
- the first heating zone, the second heating zone, and the third heating zone are uniformly heated separately.
- the present invention provides an evaporation crucible comprising: a crucible body and at least two heating devices wound around the crucible body;
- the crucible body includes at least two cylindrical structures, each of the cylindrical structures having different diameters, and the crucible body is for holding an evaporation material;
- Each of the cylindrical structures is provided with one of the heating devices, and the heating device heats the vapor deposition material in the corresponding cylindrical structure.
- the vapor deposition crucible further includes at least two vapor deposition sieves, each of the vapor deposition sieves corresponding to one of the cylindrical structures, and the vapor deposition sieve is disposed on the same Corresponding to the top end of the cylindrical structure, the airflow of the vapor deposition material in the crucible body is more uniform.
- the vapor deposition screen and the crucible body are both made of titanium.
- each of the cylindrical structures is a heating region
- the crucible body includes three heating regions: a first heating region, a second heating region, and a third heating region, the first heating The region is the bottom region of the crucible body, the second heating region is the middle region of the crucible body, the third heating region is the upper region of the crucible body, and the diameter of the first heating region is ⁇ the second heating region Diameter ⁇ diameter of the third heating zone.
- the height of the first heating region accounts for 10 of the height of the crucible body. %, the height of the third heating zone accounts for 15% of the height of the crucible body.
- the vapor deposition screen comprises a first vapor deposition sieve, a second vapor deposition sieve and a third vapor deposition sieve, the first vapor deposition sieve and the first heating
- the second vapor deposition screen corresponds to the second heating region
- the third vapor deposition screen corresponds to the third heating region
- the area of the first vapor deposition sieve is The area of the second vapor deposition screen is ⁇ the area of the third vapor deposition screen.
- the diameter of the circular hole of the first vapor-deposited sieve piece > the diameter of the circular hole of the second vapor-deposited sieve piece > the diameter of the circular hole of the third vapor-deposited sieve piece.
- the heating device includes a first heating device, a second heating device, and a third heating device disposed in a longitudinal direction, each of the heating devices being disposed around its corresponding heating region, which can be realized
- the first heating zone, the second heating zone, and the third heating zone are uniformly heated separately.
- the present invention provides an evaporation system comprising an evaporation crucible, which is any of the above-described vapor deposition crucibles.
- the invention provides an evaporation ⁇ And an evaporation system including the vapor deposition ruthenium not only can effectively improve the problem of excessive lateral and longitudinal temperature difference of the vapor deposition ruthenium in the current evaporation system, but also can reduce the waste of the evaporation material and improve the utilization rate of the material. reduce manufacturing cost.
- FIG. 1 is a schematic view of a prior art vapor deposition crucible
- FIG. 2 is a schematic structural view of an evaporating crucible according to an embodiment of the present invention.
- FIG. 3 is still another schematic structural view of an evaporating crucible according to an embodiment of the present invention.
- FIG. 4 is a schematic structural view of an evaporation screen according to an embodiment of the present invention.
- FIG. 1 is a schematic view of a prior art vapor deposition crucible structure.
- vapor deposition ⁇ 1 is used in the current evaporation process.
- the vapor deposition material contained in the crucible body 11 evaporates until consumption is completed, and the amount of material placed is determined by the capacity of the crucible body 11, but the heating device of the existing vapor deposition crucible 1 12
- the temperature difference in the body 11 is fixed, and the longitudinal length of the body 11 is larger, and the body 11 is The temperature difference of the vapor deposition material inside is larger, so that the melting unevenness of the vapor deposition material is liable to occur, and the body 11 is easily formed.
- the present invention provides an evaporation ruthenium 2 and an evaporation system including the vapor deposition ruthenium 2, which can solve the above problems.
- the present invention provides an evaporation crucible 2 comprising: a crucible body 21 and wound around the crucible body 21 At least two heating devices 22 around;
- the crucible body 21 includes at least two cylindrical structures, each of which has a different diameter, and the crucible body 21 Used to hold vapor deposition materials;
- One of the heating devices 22 is disposed corresponding to each of the cylindrical structures, and the heating device 22 The vapor deposition material in the corresponding cylindrical structure is heated.
- the cymbal body 21 includes at least two cylindrical structures.
- Each of the cylindrical structures is a heating region, and the crucible body includes three heating regions: a first heating region 211, a second heating region 212, a third heating region 213, and a first heating region 211.
- the bottom portion of the crucible body, the second heating region 212 is a central heating region of the crucible body, and the third heating region 213 It is the upper heating zone, the diameter of the bottom heating zone ⁇ the diameter of the middle heating zone ⁇ the diameter of the upper heating zone.
- the advantage of this arrangement is that since the diameter of the first heating region 211 is small, the first heating region 211 The temperature of the evaporation material rises more rapidly, so that the heat of the evaporation material of the first heating zone 211 is transferred upward to the evaporation material of the second heating zone 212, and the second heating zone 212 The diameter of the vapor deposition material is larger than that of the portion of the vapor deposition material that is not directly heated, so that the temperature rise rate of the vapor deposition material in the second heating region 212 is originally slower than the first heating region 211.
- the temperature of the vapor deposition material but the temperature rise rate of the second heating region 212 absorbing the heat of the first heating region 211 is accelerated, thereby reaching the first heating region 211 evaporation material and the second heating region.
- the temperature rise rate of the vapor deposition material is balanced; similarly, since the diameter of the third heating region 213 is the largest, the vapor deposition material that is not directly heated by the third heating region 213 is increased, thereby causing the third heating region. 213
- the temperature rise rate is the slowest, but the second heating zone 212 after the temperature rise transfers heat to the third heating zone 213, causing the third heating zone 213 to vaporize the material and the second heating zone.
- the temperature rise rate of the vapor deposition material is balanced, whereby the rate of rise of the temperature of the first heating zone 211, the second heating zone 212, and the third heating zone 213 is balanced so as not to be in the body of the crucible
- the longitudinal direction of 21 produces a large temperature difference.
- a vapor deposition screen 23 is provided on the top of each of the heating regions.
- the diameter of the circular hole is > the diameter of the circular hole of the third vapor-deposited sieve 233, and the round holes of the vapor-deposited sieve 23 are evenly distributed on the vapor-deposited sieve 23.
- the vapor deposition screen 23 and the crucible body 21 are made of the same material, such as titanium; 23 and the ⁇ body 21 have the same thermal conductivity, avoiding the uneven heat conduction of each part of the vapor deposition ⁇ 2 .
- the heating device 22 includes at least three heating devices arranged in a longitudinal direction: a first heating device 221 and a second heating device 222, a third heating device 223, the at least two heating devices 22 are evenly disposed around the ⁇ body 21, and the first heating region 211 and the second heating region 212 can be realized.
- the third heating zone 213 is uniformly heated separately, and the heating device 22 is usually a heating wire.
- the heating device 22 further includes a temperature measuring and controlling portion for separately controlling the first heating region 211 The heating temperature of the second heating zone 212 and the third heating zone 213.
- the vapor deposition crucible 2 further comprises a separating device for the heating device 22 and the crucible body 21 Approaching or separating.
- the invention also provides an evaporation system, the evaporation system comprising an evaporation crucible 2, the vapor deposition crucible 2 It is an evaporation crucible 2 according to any embodiment of the present invention.
- the invention provides an evaporation ⁇ And an evaporation system including the vapor deposition ruthenium not only can effectively improve the problem of excessive lateral and longitudinal temperature difference of the vapor deposition ruthenium in the current evaporation system, but also can reduce the waste of the evaporation material and improve the utilization rate of the material. reduce manufacturing cost.
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
一种蒸镀坩埚(2),包括坩埚本体(21)和缠绕在坩埚本体(21)四周的至少两个加热装置(22);坩埚本体(21)包括至少两个筒状结构,每个筒状结构具有不同的直径,坩埚本体(21)用于盛放蒸镀材料;每个筒状结构对应设置一个加热装置(22,221,222,223),加热装置(22,221,222,223)对对应筒状结构中的蒸镀材料进行加热;加热装置(22,221,222,223)还包括温度测控部分,用以分别测控至少两个加热区域(211,212,213)的加热温度。还公开了一种蒸镀坩埚和一种蒸镀系统。
Description
本发明涉及设备制造技术领域,具体涉及一种蒸镀坩埚以及一种包括所述蒸镀坩埚的蒸镀系统。
有机发光二极管(Organic Light-Emitting
Diode,OLED)显示器具有亮度高、响应快、能耗低、可弯曲等一系列的优点,在当今的平板显示器市场中占据了越来越重要的地位,代表了下一代显示器的发展趋势;而有机发光二极管与液晶显示(Liquid
Crystal Display,LCD)相比,最大的优势就是可制备大尺寸、超薄、柔性、透明。
目前OLED比较成熟的工艺是使用小分子蒸镀方式,但是在目前的蒸镀制程中,点源通常是采用圆柱形坩埚且加热丝为一体式加热,坩埚内的温差是固定的,坩埚纵向长度越长,温差越难控制,所以一段式加热会造成坩埚上端和下端温差较大的问题,从而使得材料浪费。
本发明提供一种蒸镀坩埚
以及一种包括所述蒸镀坩埚的蒸镀系统,不仅可以有效改善目前蒸镀系统中蒸镀坩埚横向和纵向温差过大的问题,而且可以减少蒸镀材料的浪费,提高材料的利用率,降低生产成本。
本发明提供了一种蒸镀坩埚,包括 :坩埚本体和缠绕在所述坩埚本体四周的至少两个加热装置;
所述坩埚本体包括至少两个筒状结构,每个所述筒状结构具有不同的直径,所述坩埚本体用于盛放蒸镀材料;
每个所述筒状结构对应设置一个所述加热装置,所述加热装置对所述对应筒状结构中的蒸镀材料进行加热;
所述加热装置还包括温度测控部分,用以分别测控所述至少两个加热区域的加热温度。
根据本发明一优选实施例,所述蒸镀坩埚还包括至少两个蒸镀筛片,每一个所述蒸镀筛片与一个所述筒状结构相对应,所述蒸镀筛片设置于其对应筒状结构的顶端,用于将所述坩埚本体内蒸镀材料的气流变的更加均匀。
根据本发明一优选实施例,所述蒸镀筛片与所述坩埚本体均采用钛制备。
根据本发明一优选实施例,每一个所述筒状结构为一个加热区域,所述坩埚本体包括三个加热区域:第一加热区域、第二加热区域、第三加热区域,所述第一加热区域为所述坩埚本体底部区域,所述第二加热区域为所述坩埚本体中部区域,所述第三加热区域为所述坩埚本体上部区域,所述第一加热区域的直径<第二加热区域的直径<第三加热区域的直径。
根据本发明一优选实施例,所述第一加热区域的高度占所述坩埚本体高度的 10
%,所述第三加热区域的高度占所述坩埚本体高度的 15 %。
根据本发明一优选实施例,所述蒸镀筛片包括第一蒸镀筛片、第二蒸镀筛片和第三蒸镀筛片,所述第一蒸镀筛片与所述第一加热区域相对应,第二蒸镀筛片与所述第二加热区域相对应,所述第三蒸镀筛片与所述第三加热区域相对应,所述第一蒸镀筛片的面积<所述第二蒸镀筛片的面积<所述第三蒸镀筛片的面积。
根据本发明一优选实施例,所述第一蒸镀筛片的圆孔直径>所述第二蒸镀筛片的圆孔直径>所述第三蒸镀筛片的圆孔直径。
根据本发明一优选实施例,所述加热装置包括延纵向方向设置的第一加热装置、第二加热装置和第三加热装置,每个所述加热装置设置在其对应加热区域的四周,能够实现所述第一加热区域、第二加热区域、第三加热区域的分开均匀加热。
本发明提供了一种蒸镀坩埚,包括 :坩埚本体和缠绕在所述坩埚本体四周的至少两个加热装置;
所述坩埚本体包括至少两个筒状结构,每个所述筒状结构具有不同的直径,所述坩埚本体用于盛放蒸镀材料;
每个所述筒状结构对应设置一个所述加热装置,所述加热装置对所述对应筒状结构中的蒸镀材料进行加热。
根据本发明一优选实施例,所述蒸镀坩埚还包括至少两个蒸镀筛片,每一个所述蒸镀筛片与一个所述筒状结构相对应,所述蒸镀筛片设置于其对应筒状结构的顶端,用于将所述坩埚本体内蒸镀材料的气流变的更加均匀。
根据本发明一优选实施例,所述蒸镀筛片与所述坩埚本体均采用钛制备。
根据本发明一优选实施例,每一个所述筒状结构为一个加热区域,所述坩埚本体包括三个加热区域:第一加热区域、第二加热区域、第三加热区域,所述第一加热区域为所述坩埚本体底部区域,所述第二加热区域为所述坩埚本体中部区域,所述第三加热区域为所述坩埚本体上部区域,所述第一加热区域的直径<第二加热区域的直径<第三加热区域的直径。
根据本发明一优选实施例,所述第一加热区域的高度占所述坩埚本体高度的 10
%,所述第三加热区域的高度占所述坩埚本体高度的 15 %。
根据本发明一优选实施例,所述蒸镀筛片包括第一蒸镀筛片、第二蒸镀筛片和第三蒸镀筛片,所述第一蒸镀筛片与所述第一加热区域相对应,第二蒸镀筛片与所述第二加热区域相对应,所述第三蒸镀筛片与所述第三加热区域相对应,所述第一蒸镀筛片的面积<所述第二蒸镀筛片的面积<所述第三蒸镀筛片的面积。
根据本发明一优选实施例,所述第一蒸镀筛片的圆孔直径>所述第二蒸镀筛片的圆孔直径>所述第三蒸镀筛片的圆孔直径。
根据本发明一优选实施例,所述加热装置包括延纵向方向设置的第一加热装置、第二加热装置和第三加热装置,每个所述加热装置设置在其对应加热区域的四周,能够实现所述第一加热区域、第二加热区域、第三加热区域的分开均匀加热。
本发明提供了一种蒸镀系统,所述蒸镀系统包括蒸镀坩埚,所述蒸镀坩埚为任一项上述的蒸镀坩埚。
本发明提供一种蒸镀坩埚
以及一种包括所述蒸镀坩埚的蒸镀系统,不仅可以有效改善目前蒸镀系统中蒸镀坩埚横向和纵向温差过大的问题,而且可以减少蒸镀材料的浪费,提高材料的利用率,降低生产成本。
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图 1 为现有技术的蒸镀坩埚结构示意图;
图 2 为本发明实施例的蒸镀坩埚的结构示意图;
图 3 为本发明实施例的蒸镀坩埚的又一结构示意图。
图 4 为本发明实施例的蒸镀筛片的结构示意图;
以下各实施例的说明是参考附加的图示,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如
[ 上 ] 、 [ 下 ] 、 [ 前 ] 、 [ 后 ] 、 [ 左 ] 、 [ 右 ] 、 [ 内 ] 、 [ 外 ] 、 [ 侧面 ]
等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。在图中,结构相似的单元是用以相同标号表示。
图 1 为现有技术的蒸镀坩埚结构示意图。如图 1 所示,在目前蒸镀制程中,使用蒸镀坩埚 1
进行加热时,坩埚本体 11 内盛放的蒸镀材料会蒸发直至消耗完毕,材料的放置量是由坩埚本体 11 的容量决定的,但是由于现有蒸镀坩埚 1 的加热装置 12
为一体式加热,坩埚本体 11 内的温差固定,坩埚本体 11 的纵向长度越大,坩埚本体 11
内的蒸镀材料的温差就越大,从而容易出现所述蒸镀材料的融化不均,坩埚本体 11
长度引起的突沸所造成的速率不稳以及蒸镀材料内部导热不均所导致的蒸镀材料裂解的缺陷,从而使得蒸镀材料的有效使用率在 10% ~ 80% ,在进行 OLED
的量产中会造成蒸镀材料的大量浪费。
而本发明提出一种蒸镀坩埚 2 以及 一种包括所述蒸镀坩埚2的蒸镀系统,能够解决上述问题。
如图2所示,本发明提供 一种蒸镀坩埚 2 ,包括:坩埚本体 21 和缠绕在所述坩埚本体 21
四周的至少两个加热装置 22 ;
所述坩埚本体 21 包括至少两个筒状结构,每个所述筒状结构具有不同的直径,所述坩埚本体 21
用于盛放蒸镀材料;
每个所述筒状结构对应设置一个所述加热装置 22 ,所述加热装置 22
对所述对应筒状结构中的蒸镀材料进行加热。
优选的,如图 3 所示,坩埚本体 21 包括至少两个筒状结构 ,
每一个所述筒状结构为一个加热区域,所述坩埚本体包括三个加热区域:第一加热区域 211 、第二加热区域 212 、第三加热区域 213 ,第一加热区域 211
为所述坩埚本体底部区域,第二加热区域 212 为所述坩埚本体中部加热区域,第三加热区域 213
为上部加热区域,所述底部加热区域的直径<中部加热区域的直径<上部加热区域的直径。
这样设置的好处在于,由于第一加热区域 211 的直径较小,所以第一加热区域 211
蒸镀材料的温度上升更快,致使第一加热区域 211 蒸镀材料的热量会往上传递给第二加热区域 212 的蒸镀材料,而第二加热区域 212
的直径较大,未直接受热的蒸镀材料部分更多,所以第二加热区域 212 蒸镀材料的温度上升速度原本会慢于第一加热区域 211
蒸镀材料的温度,但是吸收了所述第一加热区域 211 热量的第二加热区域 212 的温度上升速度会加快,从而达到第一加热区域 211 蒸镀材料与第二加热区域
212 蒸镀材料的温度上升速度相平衡;同理,由于第三加热区域 213 的直径最大,第三加热区域 213 未能直接受热的蒸镀材料也就越多,从而导致第三加热区域
213 温度上升速度最慢,但是,温度上升后的第二加热区域 212 会将热量传递给第三加热区域 213 ,致使第三加热区域 213 蒸镀材料与第二加热区域
212 蒸镀材料的温度上升速度平衡,由此,第一加热区域 211 、第二加热区域 212 和第三加热区域 213 温度的上升速率达到平衡,从而不会在所述坩埚本体
21 的纵向方向产生较大的温度差。
优选的,如图 4
所示,为了防止坩埚本体内的蒸镀材料发生爆沸和水平方向受热不均现象的发生,在每个所述加热区域顶部设置蒸镀筛片 23 。
优选的,为了防止蒸镀垫的圆孔发生堵塞现象,第一蒸镀筛片 231 的圆孔直径>所述第二蒸镀筛片 232
的圆孔直径>所述第三蒸镀筛片 233 的圆孔直径,且蒸镀筛片 23 的圆孔均匀的分布在蒸镀筛片 23 上。
优选的,所述蒸镀筛片 23 与所述坩埚本体 21 均采用相同材料制备,例如钛;这样可以使得蒸镀筛片
23 和坩埚本体 21 拥有相同的导热能力,避免蒸镀坩埚 2 各部分导热不均现象的发生。
优选的,所述加热装置 22 包括延纵向方向设置的至少三个加热装置:第一加热装置 221 、第二加热装置
222 、第三加热装置 223 ,所述至少两个加热装置 22 均匀布置在所述坩埚本体 21 的四周,能够实现第一加热区域 211 、第二加热区域 212
、第三加热区域 213 的分开均匀加热,所述加热装置 22 通常为加热丝。
优选的,所述加热装置 22 还包括温度测控部分,用以分别测控所述第一加热区域 211
、所述第二加热区域 212 及所述第三加热区域 213 的加热温度。
优选的,所述蒸镀坩埚 2 还包括分离装置,用于将所述加热装置 22 与所述坩埚本体 21
接近或者分离。
本发明还提供一种蒸镀系统,所述蒸镀系统包括蒸镀坩埚 2 ,所述蒸镀坩埚 2
为本发明任一实施例所述的蒸镀坩埚 2 。
本发明提供一种蒸镀坩埚
以及一种包括所述蒸镀坩埚的蒸镀系统,不仅可以有效改善目前蒸镀系统中蒸镀坩埚横向和纵向温差过大的问题,而且可以减少蒸镀材料的浪费,提高材料的利用率,降低生产成本。
综上所述,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本发明,本领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。
Claims (17)
- 一种蒸镀坩埚,其包括:坩埚本体和缠绕在所述坩埚本体四周的至少两个加热装置;所述坩埚本体包括至少两个筒状结构,每个所述筒状结构具有不同的直径,所述坩埚本体用于盛放蒸镀材料;每个所述筒状结构对应设置一个所述加热装置,所述加热装置对所述对应筒状结构中的蒸镀材料进行加热;所述加热装置还包括温度测控部分,用以分别测控所述至少两个加热区域的加热温度。
- 根据权利要求 1 所述的蒸镀坩埚,其中,所述蒸镀坩埚还包括至少两个蒸镀筛片,每一个所述蒸镀筛片与一个所述筒状结构相对应,所述蒸镀筛片设置于其对应筒状结构的顶端,用于将所述坩埚本体内蒸镀材料的气流变的更加均匀。
- 根据权利要求 2 所述的蒸镀坩埚,其中,所述蒸镀筛片与所述坩埚本体均采用钛制备。
- 根据权利要求 2 所述的蒸镀坩埚,其中,每一个所述筒状结构为一个加热区域,所述坩埚本体包括三个加热区域:第一加热区域、第二加热区域、第三加热区域,所述第一加热区域为所述坩埚本体底部区域,所述第二加热区域为所述坩埚本体中部区域,所述第三加热区域为所述坩埚本体上部区域,所述第一加热区域的直径<第二加热区域的直径<第三加热区域的直径。
- 根据权利要求 4 所述的蒸镀坩埚,其中,所述第一加热区域的高度占所述坩埚本体高度的 10 %,所述第三加热区域的高度占所述坩埚本体高度的 15 %。
- 根据权利要求 4 所述的蒸镀坩埚,其中,所述蒸镀筛片包括第一蒸镀筛片、第二蒸镀筛片和第三蒸镀筛片,所述第一蒸镀筛片与所述第一加热区域相对应,第二蒸镀筛片与所述第二加热区域相对应,所述第三蒸镀筛片与所述第三加热区域相对应,所述第一蒸镀筛片的面积<所述第二蒸镀筛片的面积<所述第三蒸镀筛片的面积。
- 根据权利要求 6 所述的蒸镀坩埚,其中,所述第一蒸镀筛片的圆孔直径>所述第二蒸镀筛片的圆孔直径>所述第三蒸镀筛片的圆孔直径。
- 根据权利要求 4 所述的蒸镀坩埚,其中,所述加热装置包括延纵向方向设置的第一加热装置、第二加热装置和第三加热装置,每个所述加热装置设置在其对应加热区域的四周,能够实现所述第一加热区域、第二加热区域、第三加热区域的分开均匀加热。
- 一种蒸镀坩埚,其包括:坩埚本体和缠绕在所述坩埚本体四周的至少两个加热装置;所述坩埚本体包括至少两个筒状结构,每个所述筒状结构具有不同的直径,所述坩埚本体用于盛放蒸镀材料;每个所述筒状结构对应设置一个所述加热装置,所述加热装置对所述对应筒状结构中的蒸镀材料进行加热。
- 根据权利要求 9 所述的蒸镀坩埚,其中,所述蒸镀坩埚还包括至少两个蒸镀筛片,每一个所述蒸镀筛片与一个所述筒状结构相对应,所述蒸镀筛片设置于其对应筒状结构的顶端,用于将所述坩埚本体内蒸镀材料的气流变的更加均匀。
- 根据权利要求 10 所述的蒸镀坩埚,其中,所述蒸镀筛片与所述坩埚本体均采用钛制备。
- 根据权利要求 10 所述的蒸镀坩埚,其中,每一个所述筒状结构为一个加热区域,所述坩埚本体包括三个加热区域:第一加热区域、第二加热区域、第三加热区域,所述第一加热区域为所述坩埚本体底部区域,所述第二加热区域为所述坩埚本体中部区域,所述第三加热区域为所述坩埚本体上部区域,所述第一加热区域的直径<第二加热区域的直径<第三加热区域的直径。
- 根据权利要求 12 所述的蒸镀坩埚,其中,所述第一加热区域的高度占所述坩埚本体高度的 10 %,所述第三加热区域的高度占所述坩埚本体高度的 15 %。
- 根据权利要求 12 所述的蒸镀坩埚,其中,所述蒸镀筛片包括第一蒸镀筛片、第二蒸镀筛片和第三蒸镀筛片,所述第一蒸镀筛片与所述第一加热区域相对应,第二蒸镀筛片与所述第二加热区域相对应,所述第三蒸镀筛片与所述第三加热区域相对应,所述第一蒸镀筛片的面积<所述第二蒸镀筛片的面积<所述第三蒸镀筛片的面积。
- 根据权利要求 14 所述的蒸镀坩埚,其中,所述第一蒸镀筛片的圆孔直径>所述第二蒸镀筛片的圆孔直径>所述第三蒸镀筛片的圆孔直径。
- 根据权利要求 12 所述的蒸镀坩埚,其中,所述加热装置包括延纵向方向设置的第一加热装置、第二加热装置和第三加热装置,每个所述加热装置设置在其对应加热区域的四周,能够实现所述第一加热区域、第二加热区域、第三加热区域的分开均匀加热。
- 一种蒸镀系统,所述蒸镀系统包括蒸镀坩埚,其中,所述蒸镀坩埚为权利要求 1 至 16 任一所述的蒸镀坩埚。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/576,857 US20190048460A1 (en) | 2017-08-14 | 2017-10-19 | Evaporation Crucible and Evaporation System |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710692335.8 | 2017-08-14 | ||
CN201710692335.8A CN107686968A (zh) | 2017-08-14 | 2017-08-14 | 蒸镀坩埚及蒸镀系统 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2019033540A1 true WO2019033540A1 (zh) | 2019-02-21 |
Family
ID=61152637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2017/106818 WO2019033540A1 (zh) | 2017-08-14 | 2017-10-19 | 蒸镀坩埚及蒸镀系统 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN107686968A (zh) |
WO (1) | WO2019033540A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6987822B2 (ja) * | 2019-09-27 | 2022-01-05 | キヤノントッキ株式会社 | 蒸発源装置、成膜装置、成膜方法および電子デバイスの製造方法 |
CN113774477B (zh) * | 2021-08-16 | 2023-03-03 | 中国电子科技集团公司第十一研究所 | 坩埚及分子束外延系统 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1413644A2 (en) * | 2002-10-24 | 2004-04-28 | Sony Corporation | Thin-film deposition device |
CN103649364A (zh) * | 2011-07-07 | 2014-03-19 | 松下电器产业株式会社 | 真空蒸镀装置 |
CN103924197A (zh) * | 2014-03-27 | 2014-07-16 | 京东方科技集团股份有限公司 | 加热装置组件和蒸镀设备 |
CN104328377A (zh) * | 2014-11-20 | 2015-02-04 | 京东方科技集团股份有限公司 | 蒸发源、成膜设备及其成膜方法 |
CN204589289U (zh) * | 2015-04-30 | 2015-08-26 | 中国电子科技集团公司第四十四研究所 | 新型热蒸发用坩埚结构 |
CN205839115U (zh) * | 2016-07-21 | 2016-12-28 | 京东方科技集团股份有限公司 | 一种坩埚和蒸发装置 |
CN206396318U (zh) * | 2017-01-24 | 2017-08-11 | 京东方科技集团股份有限公司 | 一种坩埚 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19539986A1 (de) * | 1995-10-27 | 1997-04-30 | Leybold Ag | Vakuumbeschichtungsanlage mit einem in der Vakuumkammer angeordneten Tiegel zur Aufnahme von zu verdampfendem Material |
JP2005174987A (ja) * | 2003-12-08 | 2005-06-30 | Epiquest:Kk | アルミ這い上がり防止分子線セル |
KR100685827B1 (ko) * | 2005-02-28 | 2007-02-22 | 삼성에스디아이 주식회사 | 증발원, 증착장치 및 박막 형성 방법 |
JP2007231368A (ja) * | 2006-03-01 | 2007-09-13 | Fujifilm Corp | 蒸着材料蒸発装置 |
CN101445907A (zh) * | 2007-11-27 | 2009-06-03 | 鸿富锦精密工业(深圳)有限公司 | 蒸镀装置 |
KR102155735B1 (ko) * | 2013-07-25 | 2020-09-15 | 삼성디스플레이 주식회사 | 증착장치용 증착원 |
CN104404450B (zh) * | 2014-10-28 | 2018-06-01 | 深圳市华星光电技术有限公司 | 用于升华型oled材料蒸镀的坩埚 |
KR102319998B1 (ko) * | 2015-01-22 | 2021-11-01 | 삼성디스플레이 주식회사 | 볼륨 가변형 도가니를 구비한 증착원 |
CN104928628B (zh) * | 2015-05-15 | 2018-03-09 | 京东方科技集团股份有限公司 | 一种蒸镀坩埚 |
CN104947041B (zh) * | 2015-07-07 | 2017-08-11 | 深圳市华星光电技术有限公司 | 一种蒸镀坩埚以及oled材料的蒸镀装置 |
CN205999473U (zh) * | 2016-08-31 | 2017-03-08 | 昆山维信诺科技有限公司 | 蒸镀设备及安装于蒸镀设备内的分流装置 |
CN206033867U (zh) * | 2016-10-14 | 2017-03-22 | 京东方科技集团股份有限公司 | 蒸镀坩埚及蒸镀设备 |
CN106893981B (zh) * | 2017-03-30 | 2019-01-25 | 南京大学 | 一种用于提高蒸发束流稳定性的坩埚和具有该坩埚的源炉 |
-
2017
- 2017-08-14 CN CN201710692335.8A patent/CN107686968A/zh active Pending
- 2017-10-19 WO PCT/CN2017/106818 patent/WO2019033540A1/zh active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1413644A2 (en) * | 2002-10-24 | 2004-04-28 | Sony Corporation | Thin-film deposition device |
CN103649364A (zh) * | 2011-07-07 | 2014-03-19 | 松下电器产业株式会社 | 真空蒸镀装置 |
CN103924197A (zh) * | 2014-03-27 | 2014-07-16 | 京东方科技集团股份有限公司 | 加热装置组件和蒸镀设备 |
CN104328377A (zh) * | 2014-11-20 | 2015-02-04 | 京东方科技集团股份有限公司 | 蒸发源、成膜设备及其成膜方法 |
CN204589289U (zh) * | 2015-04-30 | 2015-08-26 | 中国电子科技集团公司第四十四研究所 | 新型热蒸发用坩埚结构 |
CN205839115U (zh) * | 2016-07-21 | 2016-12-28 | 京东方科技集团股份有限公司 | 一种坩埚和蒸发装置 |
CN206396318U (zh) * | 2017-01-24 | 2017-08-11 | 京东方科技集团股份有限公司 | 一种坩埚 |
Also Published As
Publication number | Publication date |
---|---|
CN107686968A (zh) | 2018-02-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2019033540A1 (zh) | 蒸镀坩埚及蒸镀系统 | |
WO2019019275A1 (zh) | 一种触控阵列基板及触控面板 | |
WO2017161624A1 (zh) | 蒸镀坩埚 | |
WO2019056626A1 (zh) | 一种蒸镀坩埚以及蒸镀装置 | |
WO2019041553A1 (zh) | 像素结构垂直沟道有机薄膜晶体管及其制作方法 | |
TW202018133A (zh) | 一種單晶生長爐的反射屏及單晶生長爐 | |
CN104233196A (zh) | 蒸镀坩埚和蒸镀装置 | |
WO2017015993A1 (zh) | 液晶显示器及其液晶面板 | |
WO2019104845A1 (zh) | 一种蒸镀用掩膜组件 | |
ES2667403T3 (es) | Protección para pantalla de visualización y procedimiento para su preparación y procedimiento de ahorro de energía | |
WO2019090832A1 (zh) | 显示器件及显示面板 | |
WO2019100558A1 (zh) | 一种蒸镀装置 | |
WO2019037234A1 (zh) | 一种柔性显示面板的制作方法 | |
CN107103944A (zh) | 一种金属纳米线的定向排布方法 | |
WO2018148999A1 (zh) | 有机电致发光显示装置 | |
WO2017049664A1 (zh) | 一种tft基板、tft开关管及其制造方法 | |
WO2019237465A1 (zh) | 触控面板及其制备方法 | |
WO2017092079A1 (zh) | 液晶显示装置及其液晶显示面板 | |
WO2019136872A1 (zh) | 一种阵列基板、oled显示面板及oled显示器 | |
CN116575003A (zh) | 一种蒸镀源和蒸镀装置 | |
WO2018036018A1 (zh) | 一种有机二极管显示驱动电路、显示面板及电子设备 | |
CN205934008U (zh) | 一种基板悬挂系统 | |
WO2019184153A1 (zh) | 像素电极、阵列基板及液晶显示面板 | |
WO2019024168A1 (zh) | 一种触摸显示屏 | |
US20060018749A1 (en) | Shuttle and substrate carrying method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 17921686 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 17921686 Country of ref document: EP Kind code of ref document: A1 |