WO2019056626A1 - 一种蒸镀坩埚以及蒸镀装置 - Google Patents

一种蒸镀坩埚以及蒸镀装置 Download PDF

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Publication number
WO2019056626A1
WO2019056626A1 PCT/CN2017/117332 CN2017117332W WO2019056626A1 WO 2019056626 A1 WO2019056626 A1 WO 2019056626A1 CN 2017117332 W CN2017117332 W CN 2017117332W WO 2019056626 A1 WO2019056626 A1 WO 2019056626A1
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spacer
crucible
vapor deposition
spacers
layers
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PCT/CN2017/117332
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English (en)
French (fr)
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洪国荣
徐超
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武汉华星光电半导体显示技术有限公司
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Publication of WO2019056626A1 publication Critical patent/WO2019056626A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Definitions

  • the present invention relates to the field of display screen manufacturing technology, and in particular to an evaporation crucible and a vapor deposition apparatus.
  • OLED Organic Light-Emitting diode
  • display screens are widely used on mobile phone screens. More and more panel manufacturers are beginning to build OLED display production lines. The evaporation process is a key process affecting the yield of OLED displays. It is in the production process of mass production lines. Projects that require significant control.
  • Existing OLED devices mainly include an organic film layer and a metal film layer, wherein the metal film layer mainly uses magnesium/silver co-evaporation as an OLED anode.
  • the inventors of the present application found that in the process of depositing magnesium on the product to be processed by the evaporation process, when magnesium is added to the body, the magnesium is highly active, and the magnesium in contact with the air is easily Oxidation to magnesium oxide, while the purity of magnesium is as high as 99.99%. Due to the difficulty of purification, the starting material magnesium contains some impurities. Thus, in the process of depositing magnesium, a small amount of impurities in the starting material and oxide magnesia will be evaporated. When it comes to the product, it will cause color mixing, black spots, etc. on the surface of the product to be processed, which will affect the yield.
  • the present invention provides an evaporation crucible and an evaporation apparatus to solve the problem of a small amount of impurities of the starting materials in the prior art and the evaporation of oxide magnesia onto the product to be processed.
  • the present invention adopts a technical solution to provide an evaporation crucible, wherein the vapor deposition crucible includes:
  • At least two layers of spacers are disposed at intervals in the body, each of the spacers opening through the plurality of through holes, so that the vapor deposition material passes through the gasket after vaporization, and blocks the evaporation Solid impurities in the material;
  • the through holes of the adjacent two layers of the spacers are arranged offset from each other, and the area of the plurality of the through holes of each of the spacers is 30-50% of the area of the spacer.
  • another technical solution adopted by the present invention is to provide an evaporation crucible, and the vapor deposition crucible includes:
  • At least two layers of spacers are disposed at intervals in the body, each of the spacers opening through the plurality of through holes, so that the vapor deposition material passes through the gasket after vaporization, and blocks the evaporation Solid impurities in the material.
  • another technical solution adopted by the present invention is to provide an evaporation apparatus comprising an evaporation crucible, and the vapor deposition crucible is the vapor deposition crucible described above.
  • the vapor deposition crucible provided by the present invention comprises a crucible body for accommodating the evaporation material, and at least two layers of spacers are disposed at intervals in the crucible body, each of which is different from the prior art.
  • the gasket penetrates through the plurality of through holes to smoothly pass the vapor deposition material through the gasket and block solid impurities in the evaporation material.
  • At least two layers of spacers are disposed in the interior of the crucible body, and each of the spacers is provided with a plurality of through holes, so that during the heating process, the vapor deposition material in the crucible body vaporizes when reaching a certain temperature.
  • FIG. 1 is a schematic structural view of an embodiment of vapor deposition according to the present invention.
  • Fig. 2 is an exploded perspective view of the vapor deposition crucible shown in Fig. 1.
  • FIG. 1 is a schematic structural view of an embodiment of the vapor deposition crucible 100 of the present invention
  • FIG. 2 is an exploded perspective view of the vapor deposition crucible 100 shown in FIG.
  • the vapor deposition crucible 100 provided by the embodiment of the present invention comprises a crucible body 10 and at least two layers of spacers 30 for containing an evaporation material such as magnesium, calcium, barium, etc., of course, other evaporation materials, at least Two layers of spacers 30 are disposed in the interior of the crucible body 10, and each layer of the spacers 30 is formed through the plurality of through holes 31, so that the vaporized material after vaporization can smoothly pass through the spacers 30 to deposit evaporation on the products to be processed.
  • the material simultaneously blocks the solid impurities in the evaporation material, thereby preventing the solid impurities in the evaporation material from moving up to the product to be processed as the vaporization of the vaporized material after vaporization moves upward
  • the vapor deposition material is exemplified by magnesium.
  • the magnesium portion in contact with the air is oxidized to magnesium oxide.
  • the magnesium is heated and reaches a certain temperature, the magnesium is vaporized into a gaseous state, and the oxidized magnesium oxide and other impurities remain. Keeping it in a solid state, in order to ensure that the magnesium in the crucible body 10 can be normally deposited under the heating condition, the magnesium oxide and/or other impurities are effectively blocked from falling along the vaporized magnesium gas to the product to be processed.
  • the number of layers of spacers 30 disposed in the body 10 is in the range of 3-10 layers, for example, 3 layers, 4 layers, 6 layers or 8 layers. Of course, in other embodiments, the number of layers of the spacer 30 can be adjusted according to actual conditions, which is not limited herein.
  • the through holes 31 between the adjacent two-layer spacers 30 are offset from each other so that the solid impurities passing through the through holes 31 of the spacer 30 are blocked by the next layer of the spacer 30 as the airflow rises. Thereby, the blocking effect of the gasket 30 is further enhanced.
  • the area of the plurality of through holes 31 of each spacer 30 and the area of the spacer 30 are 30-50%, for example, 30%, 40% or 50%.
  • the density of the through holes 31 of the spacer 30 in the bottom layer 30 of the body 10 and the through hole 31 of the spacer 30 in the top layer is greater than the density of the through holes 31 of the spacer 30 between the spacer 30 of the bottom layer and the spacer 30 of the top layer.
  • the underlying spacer 30 is defined as the spacer 30 closest to the bottom of the crucible body 10
  • the spacer 30 of the top layer is defined as the spacer 30 closest to the top of the crucible body 10
  • the density of the via 31 is defined as each spacer 30.
  • the diameter of the through hole 31 of the bottom layer 30 and the spacer 30 of the top layer provided in the body 10 ranges from 3-5 mm, for example, 3 mm, 4 mm or 5 mm.
  • the diameter of the through hole 31 of the spacer 30 between the spacer 30 of the bottom layer and the spacer 30 of the top layer ranges from 5 to 10 mm, for example, 5 mm, 8 mm or 10 mm.
  • the through holes 31 in the same spacer 30 have the same diameter.
  • the same spacer 30 includes a plurality of through holes 31 of different diameters.
  • a part of the through holes 31 has a diameter of 3 mm, and a part of the through holes 31 has a diameter of 4 mm.
  • the through hole 31 has a diameter of 5 mm.
  • the plurality of through holes 31 of different diameters may be regularly arranged or irregularly arranged, and are not limited herein.
  • the density of the through holes 31 of the bottom spacer 30 is equal to the density of the through holes 31 of the spacer 30 of the top layer, and the density of the through holes 31 of the spacer 30 between the spacer 30 of the bottom layer and the spacer 30 of the top layer is uniform. equal.
  • the number of the spacers 30 disposed in the crucible body 10 is four layers, including the first layer spacer 30, the second layer spacer 30, the third layer spacer 30, and the first layer.
  • the density of 31 is greater than the density of the through holes 31 of the second layer spacer 30 and the third layer spacer 30.
  • the underlying gasket 30 disposed in the crucible body 10 is closest to the evaporation material.
  • the pressure of the gas flow is relatively large, and the impurities contained therein are easily followed by the gas flow under the action of the gas flow.
  • the through hole 31 of the spacer 30 has a relatively high density, and the diameter of the through hole 31 is small, which can block most of the solid impurities from moving upward; the spacer 30 of the top layer disposed in the body 10 is the last layer.
  • the gasket 30 for blocking impurities may be filtered by the multilayer gasket 30, and some impurities may move upward with the airflow passing through the through hole 31.
  • the through hole 31 of the gasket 30 has a large density and a through hole.
  • the diameter of 31 is smaller, which can further block the impurities moving upward; the density of the through holes 31 of the spacer 30 between the spacer 30 of the bottom layer and the spacer 30 of the top layer is smaller, and the diameter of the through hole 31 is smaller. Large, so that the vaporization of the vapor-deposited material can be normally moved upward after vaporization, while filtering part of the solid impurities.
  • the distance between the bottom layer of the gasket 30 and the bottom of the crucible is greater than the height of the vapor deposition material so that the vapor deposition material has sufficient accommodation space to not touch the underlying gasket 30.
  • the vapor deposition crucible 100 further includes a plurality of support members 50.
  • the plurality of support members 50 are detachably disposed in the crucible body 10, and each of the spacers 30 is disposed on the corresponding support member 50.
  • the support member 50 is a support ring, and the support ring is a hollow cylinder.
  • the outer diameter of the support ring is equal to the inner diameter of the side wall of the cymbal body 10, so that the support ring can be stably disposed in the cymbal body 10. .
  • the plurality of supports 50 have the same height such that the distance between adjacent spacers 30 is equal.
  • the heights of the plurality of support members 50 are sequentially decreased from bottom to top, so that the distance between the adjacent two-layer spacers 30 is sequentially decreased from bottom to top.
  • the support 50 can also be a bracket.
  • the material of the gasket 30 and the material of the support member 50 are the same as those of the vapor deposition crucible 100, such as titanium metal.
  • the support member 50 for supporting the spacer 30 of the bottom layer is placed at the bottom of the crucible body 10, the evaporation material is loaded into the crucible body 10, and then the spacer 30 of the bottom layer is placed on the support member 50. Then, the support member 50 and the spacer 30 are repeatedly placed. When the number of layers of the spacer 30 reaches the required number of layers, it is not necessary to place the support member 50 on the spacer 30.
  • the embodiment of the present invention further provides an evaporation device, which includes an evaporation crucible 100, and the vapor deposition crucible 100 has the same structure as the vapor deposition crucible 100, and details are not described herein again.
  • the vapor deposition crucible 100 includes a crucible body 10 for accommodating the evaporation material; at least two layers of spacers 30 are disposed in the crucible body 10, and each spacer 30 is opened.
  • the plurality of through holes 31 are such that the vapor deposition material vaporizes smoothly through the gasket and blocks solid impurities in the evaporation material.
  • At least two layers of spacers 30 are disposed in the interior of the crucible body 10, and each of the spacers 30 is provided with a plurality of through holes 31.
  • the product to be processed is vapor-deposited, and the impurities contained in the vapor deposition material are kept as solid particles, and are moved upward by the influence of the gas flow. Due to the blocking effect of the unopened area of the gasket 30, the solid impurities cannot continue to move upward, and even if they pass through the through hole 31, they are again blocked by the blocking action or gravity of the next layer of the gasket 30, thereby filtering the impurities. In the evaporation process, the oxygen solid impurities can be effectively prevented from being evaporated onto the product to be processed, thereby effectively improving the yield.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种蒸镀坩埚（100）以及蒸镀装置，其中，所述蒸镀坩埚（100）包括：坩埚本体（10），用于容纳蒸镀材料；至少两层垫片（30），间隔设置于所述坩埚本体（10）内，每一所述垫片（30）贯通开设多个通孔（31），以使得所述蒸镀材料汽化后顺利通过所述垫片（30），并阻挡所述蒸镀材料中的固体杂质。通过上述方式，能够将蒸镀材料中的杂质过滤，减少待加工产品中的杂质，从而提高产品的良率。

Description

一种蒸镀坩埚以及蒸镀装置
【技术领域】
本发明涉及显示屏制造技术领域，特别是涉及一种蒸镀坩埚以及蒸镀装置。
【背景技术】
随着有机发光二极管（OLED，Organic Light-Emitting Diode）显示屏广泛运用到手机屏上，越来越多的面板厂商开始建设OLED显示屏量产线，其中蒸镀工艺是影响OLED显示屏良率的关键制程，是在量产线制备过程中需要重点控制的项目。
现有OLED器件主要包括有机膜层和金属膜层，其中，金属膜层主要使用镁/银共蒸作为OLED阳极。
本申请的发明人在长期的研发过程中，发现采用蒸镀工艺在待加工产品上沉积镁的过程中，在往坩埚本体内添加镁时，因镁活性较高，与空气接触的镁易被氧化成氧化镁，同时镁的纯度高达99.99%，因提纯困难导致起始原料镁中含有部分杂质，如此，在沉积镁的过程中，起始原料中的少量杂质和氧化物氧化镁会蒸镀到产品上，从而导致待加工产品表面出现混色、黑点等情况，影响良品率。
【发明内容】
本发明提供一种蒸镀坩埚以及蒸镀装置，以解决现有技术中起始原料的少量杂质和氧化物氧化镁蒸镀到待加工产品上的问题。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种蒸镀坩埚，其中，所述蒸镀坩埚包括：
坩埚本体，用于容纳蒸镀材料；
至少两层垫片，间隔设置于所述坩埚本体内，每一所述垫片贯通开设多个通孔，以使得所述蒸镀材料汽化后顺利通过所述垫片，并阻挡所述蒸镀材料中的固体杂质；
其中，相邻的两层所述垫片的所述通孔相互错开设置，且每一所述垫片的多个所述通孔的面积和占所述垫片的面积的30-50%。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种蒸镀坩埚，所述蒸镀坩埚包括：
坩埚本体，用于容纳蒸镀材料；
至少两层垫片，间隔设置于所述坩埚本体内，每一所述垫片贯通开设多个通孔，以使得所述蒸镀材料汽化后顺利通过所述垫片，并阻挡所述蒸镀材料中的固体杂质。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种蒸镀装置，包括蒸镀坩埚，所述蒸镀坩埚为上述所述的蒸镀坩埚。
本发明的有益效果是：区别于现有技术的情况，本发明提供的蒸镀坩埚包括坩埚本体，用于容纳蒸镀材料；至少两层垫片，间隔设置于所述坩埚本体内，每一所述垫片贯通开设多个通孔，以使得所述蒸镀材料汽化后顺利通过所述垫片，并阻挡所述蒸镀材料中的固体杂质。通过在坩埚本体内部间隔设置至少两层垫片，且每一层垫片贯通开设有多个通孔，如此，在加热过程中，坩埚本体内的蒸镀材料在达到一定温度时，发生汽化，随着垫片中的通孔而往上流动，而对待加工产品进行蒸镀，而蒸镀材料中所含杂质则保持为固体颗粒，受到气流的影响向上移动时，因垫片未开孔区域的阻挡作用，使得固体杂质无法继续向上移动，即使穿过通孔，则会再次受到下一层垫片的阻挡作用或重力作用而下降，从而将杂质过滤掉，在蒸镀过程中，能够有效避免了氧固体杂质蒸镀到待加工产品上，从而有效提高良品率。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图，其中：
图1是本发明蒸镀坩埚一实施方式的结构示意图；
图2是图1所示的蒸镀坩埚的分解示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，均属于本发明保护的范围。
请结合参阅图1及图2，图1是本发明蒸镀坩埚100一实施方式的结构示意图；图2是图1所示的蒸镀坩埚100的分解示意图。本发明实施方式提供的蒸镀坩埚100包括坩埚本体10以及至少两层垫片30，坩埚本体10用于容纳蒸镀材料，例如镁、钙、钡等，当然也可以是其他蒸镀材料，至少两层垫片30间隔设置在坩埚本体10内部，每一层垫片30贯通开设多个通孔31，使得汽化后的蒸镀材料能够顺利通过垫片30，以在待加工产品上沉积蒸镀材料，同时阻挡蒸镀材料中的固体杂质，从而避免蒸镀材料中的固体杂质随着汽化后的蒸镀材料的气流向上移动掉落至待加工产品上。
本实施方式中，蒸镀材料以镁为例。在蒸镀工艺中，装填镁时，与空气接触的镁部分被氧化成氧化镁，对镁进行加热且达到一定温度后，镁将汽化成气态，而被氧化成的氧化镁和其它部分杂质仍保持为固态，为保证坩埚本体10内的镁在加热条件下能够正常对待加工产品进行沉积的同时，有效阻挡氧化镁或/和其它杂质随着汽化后的镁的气流掉落至待加工产品上，坩埚本体10内间隔设置的垫片30层数范围为3-10层，例如3层、4层、6层或8层。当然，在其它实施方式中，垫片30的层数可以根据实际情况进行调整，在此不作限定。
相邻的两层垫片30之间的通孔31相互错开设置，以使得顺利穿过该垫片30的通孔31的固体杂质随着气流上升时，会受到下一层垫片30的阻挡，从而进一步加强垫片30的阻挡作用。
每一垫片30的多个通孔31的面积和占垫片30的面积的30-50%，例如30%、40%或50%。
坩埚本体10内底层的垫片30、顶层的垫片30的通孔31密度中至少一层垫片30大于底层的垫片30与顶层的垫片30之间的垫片30的通孔31密度。其中，底层的垫片30定义为最靠近坩埚本体10底部的垫片30，顶层的垫片30定义为最靠近坩埚本体10顶部的垫片30，通孔31密度定义为每一垫片30上的通孔31的数量。
坩埚本体10内设置的底层的垫片30、顶层的垫片30的通孔31的直径范围为3-5毫米，例如，3毫米、4毫米或5毫米。底层的垫片30与顶层的垫片30之间的垫片30的通孔31的直径范围为5-10毫米，例如5毫米、8毫米或10毫米。
可选的，同一垫片30中的通孔31的直径都相同。
可选的，同一垫片30中包含多种不同直径的通孔31，例如，在同一垫片30中，一部分通孔31的直径为3毫米，一部分通孔31的直径为4毫米，其它部分通孔31的直径为5毫米。
可选的，多个不同直径的通孔31可以规律性排列，亦可以无规律性排列，在此，不作限定。
可选的，底层的垫片30的通孔31密度与顶层的垫片30的通孔31密度相等，底层的垫片30与顶层的垫片30之间的垫片30的通孔31密度均相等。
本实施方式中，坩埚本体10内间隔设置的垫片30层数为4层，包括自下而上设置的第一层垫片30、第二层垫片30、第三层垫片30以及第四层垫片30，其中，第一层垫片30为底层的垫片30，第四层垫片30为顶层的垫片30，第一层垫片30、第四层垫片30的通孔31密度均大于第二层垫片30、第三层垫片30的通孔31密度。
可以理解，坩埚本体10内设置的底层的垫片30与蒸镀材料最为接近，当蒸镀材料在加热条件下汽化时，气流的压力比较大，所含的杂质在气流的作用下易跟随气流往上移动，该垫片30的通孔31密度较大，且通孔31的直径较小，能阻挡大部分固体杂质往上移动；坩埚本体10内设置的顶层的垫片30是最后一层用于阻挡杂质的垫片30，经过多层垫片30过滤后，可能还有部分杂质随着气流穿过通孔31往上移动，该垫片30的通孔31密度较大，且通孔31的直径较小，能进一步将往上移动的杂质阻挡住；底层的垫片30与顶层的垫片30之间的垫片30通孔31密度设置的较小，且通孔31的直径较大，以便于汽化后蒸镀材料的气流能够正常往上移动，同时过滤部分固体杂质。
可以理解，底层的垫片30与坩埚底部之间的距离大于蒸镀材料所堆积的高度，以使得蒸镀材料有足够的容纳空间，不会触到底层的垫片30。
在一实施方式中，蒸镀坩埚100还包括多个支撑件50，多个支撑件50可拆卸地设置于坩埚本体10内，每一垫片30置于对应的支撑件50上。
本实施方式中，支撑件50为支撑环，支撑环为中空的圆柱体，该支撑环的外径与坩埚本体10的侧壁的内径相等，以使得支撑环能够稳固地设置于坩埚本体10内。
可选的，多个支撑件50的高度相同，以使得相邻的垫片30之间的距离相等。
可选的，多个支撑件50的高度自下而上依次减小，以使相邻的两层垫片30之间的距离自下而上依次减小。
在其它实施方式中，支撑件50还可以为支架。
可选的，垫片30的材料、支撑件50的材料与蒸镀坩埚100的材料相同，例如金属钛。
当需要蒸镀时，将用于支撑底层的垫片30的支撑件50置于坩埚本体10的底部，将蒸镀材料装填至坩埚本体10内，随后将底层的垫片30置于支撑件50上，再重复放置支撑件50、垫片30，当垫片30层数达到需要的层数时，无需在垫片30上再放置支撑件50。
本发明实施方式还提供一种蒸镀装置，该蒸镀装置包括蒸镀坩埚100，该蒸镀坩埚100与上述蒸镀坩埚100的结构一致，在此不再赘述。
区别于现有技术，本发明实施方式提供的蒸镀坩埚100包括坩埚本体10，用于容纳蒸镀材料；至少两层垫片30，间隔设置于坩埚本体10内，每一垫片30贯通开设多个通孔31，以使得蒸镀材料汽化后顺利通过垫片，并阻挡蒸镀材料中的固体杂质。通过在坩埚本体10内部间隔设置至少两层垫片30，且每一层垫片30贯通开设有多个通孔31，如此，在加热过程中，坩埚本体10内的蒸镀材料在达到一定温度时，发生汽化，随着垫片30中的通孔31而往上流动，而对待加工产品进行蒸镀，而蒸镀材料中所含杂质则保持为固体颗粒，受到气流的影响向上移动时，因垫片30未开孔区域的阻挡作用，使得固体杂质无法继续向上移动，即使穿过通孔31，则会再次受到下一层垫片30的阻挡作用或重力作用而下降，从而将杂质过滤掉，在蒸镀过程中，能够有效避免了氧固体杂质蒸镀到待加工产品上，从而有效提高良品率。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (19)

  1. 一种蒸镀坩埚，其中，所述蒸镀坩埚包括：
    坩埚本体，用于容纳蒸镀材料；
    至少两层垫片，间隔设置于所述坩埚本体内，每一所述垫片贯通开设多个通孔，以使得所述蒸镀材料汽化后顺利通过所述垫片，并阻挡所述蒸镀材料中的固体杂质；
    其中，相邻的两层所述垫片的所述通孔相互错开设置，且每一所述垫片的多个所述通孔的面积和占所述垫片的面积的30-50%。
  2. 一种蒸镀坩埚，其中，所述蒸镀坩埚包括：
    坩埚本体，用于容纳蒸镀材料；
    至少两层垫片，间隔设置于所述坩埚本体内，每一所述垫片贯通开设多个通孔，以使得所述蒸镀材料汽化后顺利通过所述垫片，并阻挡所述蒸镀材料中的固体杂质。
  3. 根据权利要求2所述的蒸镀坩埚，其中，所述蒸镀坩埚还包括：
    多个支撑件，可拆卸地设置于所述坩埚本体内，每一所述垫片置于对应的所述支撑件上。
  4. 根据权利要求3所述的蒸镀坩埚，其中，多个所述支撑件的高度相同，或者多个所述支撑件的高度自下而上依次减小，以使相邻的两层所述垫片之间的距离相等或者自下而上依次减小。
  5. 根据权利要求3所述的蒸镀坩埚，其中，所述垫片的材料、所述支撑件的材料与所述蒸镀坩埚的材料相同。
  6. 根据权利要求2所述的蒸镀坩埚，其中，所述坩埚本体内间隔设置的所述垫片层数范围为3-10层。
  7. 根据权利要求2所述的蒸镀坩埚，其中，相邻的两层所述垫片的所述通孔相互错开设置。
  8. 根据权利要求2所述的蒸镀坩埚，其中，每一所述垫片的多个所述通孔的面积和占所述垫片的面积的30-50%。
  9. 根据权利要求2所述的蒸镀坩埚，其中，所述坩埚本体内底层的所述垫片、顶层的所述垫片中至少一层的所述垫片的通孔密度大于底层的所述垫片与顶层的所述垫片之间的所述垫片的通孔密度，其中所述底层的垫片定义为最靠近所述坩埚本体底部的所述垫片，所述顶层的垫片定义为最靠近所述坩埚本体顶部的所述垫片。
  10. 根据权利要求9所述的蒸镀坩埚，其中，所述坩埚本体内底层的所述垫片或/和顶层的所述垫片的通孔的直径范围为3-5毫米，底层的所述垫片与顶层的所述垫片之间的所述垫片的通孔的直径范围为5-10毫米。
  11. 一种蒸镀装置，包括蒸镀坩埚，其中，所述蒸镀坩埚包括：
    坩埚本体，用于容纳蒸镀材料；
    至少两层垫片，间隔设置于所述坩埚本体内，每一所述垫片贯通开设多个通孔，以使得所述蒸镀材料汽化后顺利通过所述垫片，并阻挡所述蒸镀材料中的固体杂质。
  12. 根据权利要求11所述的蒸镀装置，其中，所述蒸镀坩埚还包括：
    多个支撑件，可拆卸地设置于所述坩埚本体内，每一所述垫片置于对应的所述支撑件上。
  13. 根据权利要求12所述的蒸镀装置，其中，多个所述支撑件的高度相同，或者多个所述支撑件的高度自下而上依次减小，以使相邻的两层所述垫片之间的距离相等或者自下而上依次减小。
  14. 根据权利要求12所述的蒸镀装置，其中，所述垫片的材料、所述支撑件的材料与所述蒸镀坩埚的材料相同。
  15. 根据权利要求11所述的蒸镀装置，其中，所述坩埚本体内间隔设置的所述垫片层数范围为3-10层。
  16. 根据权利要求11所述的蒸镀装置，其中，相邻的两层所述垫片的所述通孔相互错开设置。
  17. 根据权利要求11所述的蒸镀装置，其中，每一所述垫片的多个所述通孔的面积和占所述垫片的面积的30-50%。
  18. 根据权利要求11所述的蒸镀装置，其中，所述坩埚本体内底层的所述垫片、顶层的所述垫片中至少一层的所述垫片的通孔密度大于底层的所述垫片与顶层的所述垫片之间的所述垫片的通孔密度，其中所述底层的垫片定义为最靠近所述坩埚本体底部的所述垫片，所述顶层的垫片定义为最靠近所述坩埚本体顶部的所述垫片。
  19. 根据权利要求18所述的蒸镀装置，其中，所述坩埚本体内底层的所述垫片或/和顶层的所述垫片的通孔的直径范围为3-5毫米，底层的所述垫片与顶层的所述垫片之间的所述垫片的通孔的直径范围为5-10毫米。
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