WO2012079294A1 - 任意尺寸底板及显示屏的气相沉积荫罩板系统及其方法 - Google Patents

任意尺寸底板及显示屏的气相沉积荫罩板系统及其方法 Download PDF

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Publication number
WO2012079294A1
WO2012079294A1 PCT/CN2011/070395 CN2011070395W WO2012079294A1 WO 2012079294 A1 WO2012079294 A1 WO 2012079294A1 CN 2011070395 W CN2011070395 W CN 2011070395W WO 2012079294 A1 WO2012079294 A1 WO 2012079294A1
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Prior art keywords
shadow mask
substrate
deposition
vacuum chamber
display screen
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PCT/CN2011/070395
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English (en)
French (fr)
Inventor
潘重光
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Pan Chongguang
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Priority to US13/521,429 priority Critical patent/US20130251907A1/en
Priority to JP2013543498A priority patent/JP5740695B2/ja
Priority to EP11848594.5A priority patent/EP2653584A4/en
Publication of WO2012079294A1 publication Critical patent/WO2012079294A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Definitions

  • the present invention relates to the field of backplanes and display screens, and more particularly to a vapor deposited shadow mask system and method for making a substrate and display screen of any size.
  • the mainstream technology for manufacturing display screens and substrates at home and abroad is photo-etching technology, and the size of the lithography machine and substrate material determines the maximum size of the display screen and the substrate.
  • the prior art cannot make a bottom plate and a display screen that exceed the upper limit of the size of the lithography machine, and cannot meet the requirements of the customer's custom size bottom plate and display screen in a timely and rapid manner, and the technology also has a large investment scale and covers an area.
  • Technical issues such as large, high environmental requirements, single product and long production time.
  • the vapor deposition shadow mask process has been used in microelectronics manufacturing for many years.
  • the vapor deposition shadow mask process is cheaper and much easier than the photolithography process, but those skilled in the art do not support the fabrication of a large-scale vapor deposition mask process. Area bottom plate.
  • a system and method for manufacturing a large-area base plate using a small-area shadow mask as disclosed in Chinese Patent Publication No. CN101027424B has been developed, as shown in Fig. 1, which shows a deposition vacuum through continuous setting.
  • the shadow mask deposition process inside chambers 314a and 314b progressively forms a typical fabrication process 300 of a 3 x 2 array of backplanes 310 including substrate segments 312a, 312b, 312c, 312d, 312e, and 312f; deposition vacuum chambers 314a and 314b respectively include shades Cover plates 316a and 316b.
  • the substrate is then advanced, and at time 2, a subsequent deposition event occurs on the substrate segment 312b inside the deposition vacuum chamber 314a using the shadow mask 316a; then the substrate is advanced, and at time 3, by using the shadow mask 316a Subsequent deposition events occur on the substrate segment 312c inside the deposition vacuum chamber 314a; when the deposition event is completed along the rows of the substrate segments 312a, 312b, and 312c, the substrate is advanced to the deposition vacuum chamber 314b, wherein the shadow mask 316b is opposed to the shadow
  • the cover sheet 316a is offset to form the next row of the substrate segments 312.
  • a deposition event occurs on the substrate segment 312d inside the deposition vacuum chamber 314b by using the shadow mask 316b; then the substrate is advanced, and at time 5, the substrate inside the deposition vacuum chamber 314b is used by using the shadow mask 316b A deposition event occurs on segment 312e; the substrate is then advanced, and at time 6 a deposition event occurs on substrate segment 312f inside deposition vacuum chamber 314b by using shadow mask 316b.
  • the positioning mechanism between the shadow mask and the substrate may become complicated due to the large number of depositions required, and it is also prone to occur due to inaccurate positioning between the shadow mask and the substrate segment.
  • the deposition source corresponding to each shadow mask needs to be responsible for depositing all the substrate segments in one row or column, thereby inconvenience in the deposition of the deposition source when the deposition of the substrate or the large-area substrate is not uniform.
  • the inventors have intensively studied the above-mentioned defects of the existing substrate and the method for manufacturing the display screen, and the present invention has been produced.
  • a first object of the present invention is to provide a vapor-deposited shadow mask system for a substrate of any size and a display screen to solve the problem of tedious manufacturing system in the prior art, complicated positioning between the shadow mask and the substrate, and adjacent substrate segments.
  • the solution of the present invention is:
  • a vapor deposition shadow mask system for a substrate of any size and display comprising:
  • each vacuum chamber having M sets of shadow mask plates and deposition sources therein;
  • a transmission device for translating the substrate or the shadow mask along the path of the vacuum chamber such that the M sets of shadow masks correspond to different ones of the M basic units at N different times;
  • M is a natural number greater than or equal to 1
  • N is a natural number greater than or equal to 2.
  • N is equal to 4.
  • the at least one vacuum chamber is N vacuum chambers arranged in series, and the transmission device is a substrate transmission device.
  • the at least one vacuum chamber is only one, and the transmission is a shadow mask transmission.
  • the shadow mask system is operable to overlap a shadow mask corresponding to an adjacent region in the base unit and a portion of the material when the deposition source is deposited.
  • a second object of the present invention is to provide a vapor deposition shadow mask method for a substrate of any size and a display screen, comprising the steps of:
  • steps C, D complete the deposition of N regions in each of the basic cells, where N is a natural number greater than or equal to two.
  • N is equal to 4.
  • the transmission device is a substrate transmission device
  • the vacuum box includes N pieces arranged in series, and different regions of each basic unit are respectively deposited in different vacuum boxes.
  • the transmission is a shadow mask transmission
  • the vacuum box is one.
  • the corresponding shadow mask and a part of the material when the deposition source is deposited are overlapped.
  • the present invention has at least the following beneficial effects:
  • the present invention When the present invention is implemented by means of a moving substrate, it is only necessary to set N vacuum boxes according to the number N of regions in each basic unit; and when implementing the method of moving the shadow mask, It is only necessary to move in a vacuum box, that is, the present invention does not require a large number of vacuum boxes as in the prior art, whereby the present invention has the effect of simplifying the entire deposition system;
  • the invention only needs to complete the deposition of N regions in each basic unit in N time, and can complete the manufacture of the bottom plate and the display screen of any size, so that the invention only needs to move N times when moving. That is, it can avoid the problem of poor connection performance between adjacent basic segments due to too many moving times;
  • a shadow mask only needs to perform a deposition operation when forming a substrate and a display screen, thereby enabling the deposition material in the deposition source to have an effect of control.
  • FIG. 1 is a timing diagram of a manufacturing process of a vapor deposition shadow mask system in the prior art
  • Figure 3 is a timing chart showing the manufacturing process of the second embodiment of the present invention.
  • Fig. 4 is a timing chart showing the manufacturing process of the second embodiment of the present invention when the shadow mask is used for transmission.
  • Substrate section 10a, 10b, 10c, 10d
  • Shadow mask 11a, 11b, 11c, 11d
  • Vacuum chamber 13A, 13B, 13C, 13D
  • Substrate segment 20aa, 20ba, 20ca, 20da, 20ab, 20bb, 20cb, 20db, 20ac, 20bc, 20cc, 20dc, 20ad, 20bd, 20cd, 20dd, 20ea, 20eb, 20ec, 20ed
  • Shadow mask panels 21aa, 21ab, 21ac, 21ad, 21ba, 21bb, 21bc, 21bd, 21ca, 21cb, 21cc, 21cd, 21da, 21db, 21dc, 21dd, 21ea, 21fa, 21ga, 21ha
  • Vacuum chamber 23A, 23B, 23C, 23D, 23E
  • Deposition vacuum chamber 314a, 314b
  • Substrate section 312a, 312b, 312c, 312d, 312e, 312f
  • Shadow mask 316a, 316b
  • the vapor deposition shadow mask system comprises four vacuum chambers 13A, 13B, 13C and 13D arranged in series in series and a substrate 10 that moves inside the vacuum chamber and a transmission (not shown) for driving the substrate 10 to translate along the path of the vacuum chamber;
  • the substrate 10 has only one basic unit, and the basic unit is divided into four a region, each of the vacuum chambers has a set of shadow masks and deposition sources therein, that is, M is equal to 1 and N is equal to 4 in this embodiment; this embodiment can be formed step by step by four depositions.
  • ⁇ 2 array of bottom plates are examples of bottom plates.
  • a deposition event occurs on the substrate segment 10a in the vacuum chamber 13A; the substrate is pushed by the actuator to accurately align the shadow mask 11b in the vacuum chamber 13B with the substrate segment 10b, that is, At time 2, a deposition event occurs on the substrate segment 10b in the vacuum chamber 13B by using the shadow mask 11b; the substrate is again pushed by the actuator to accurately align the shadow mask 11c in the vacuum chamber 13C with the substrate segment 10c, That is, at time 3, a deposition event occurs on the substrate segment 10c in the vacuum chamber 13C by using the shadow mask 11c; and the substrate is pushed by the actuator to accurately align the shadow mask 11d in the vacuum chamber 13D with the substrate segment 10d. That is, at time 4, a deposition event occurs on the substrate segment 10d in the vacuum chamber 13D by using the shadow mask 11d.
  • a 2 x 2 array of substrates was formed by successive deposition events at times 1, 2, 3, and 4, which were applied to the fabrication of small-area substrates.
  • the shadow mask system is operable to overlap a shadow mask corresponding to an adjacent area in the base unit and a portion of the deposition source during deposition to provide a stitching effect of the bottom panel.
  • the spacing S between the vacuum chambers may be any suitable or required distance that enables the substrate to be transferred from the vacuum chamber to the vacuum chamber while the vacuum chamber can operate without interference.
  • the spacing S can be zero.
  • the spacing S can be suitably large to allow the substrate to have a wider range of dimensions when using half of the structure of the vacuum box.
  • adjustment can also be made to use only one vacuum chamber, and a set of shadow mask plates and deposition sources are arranged in the vacuum chamber, and the transmission device is a shadow mask transmission device in the shadow mask plate.
  • the shadow mask can be made to correspond to the different substrate segments 10a, 10b, 10c and 10d through time 1, time 2, time 3 and time 4, respectively, and four depositions are performed, and 2 ⁇ 2 is formed.
  • the bottom plate of the array is adjusting the array.
  • the vapor deposition shadow mask system includes four vacuum chambers 23A, 23B, 23C and 23D which are arranged in series in series and a substrate 20 moving in the vacuum chamber and a transmission (not shown) for driving the substrate 20 to translate along the path of the vacuum chamber;
  • the substrate 20 has 4 basic units, and each basic unit is divided into 4 a region, each of the vacuum chambers having four sets of shadow masks and deposition sources therein, each set of shadow masks respectively corresponding to one of a basic unit, that is, in this embodiment, M is equal to 4, N is also Is equal to 4; wherein the substrate segments 20aa, 20ba, 20ca and 20da constitute a basic unit, the substrate segments 20ab, 20bb, 20cb and 20db constitute a basic unit, and the substrate segments 20ac, 20bc, 20cc and 20dc constitute a basic unit, the substrate segment 20ad, 20bd,
  • a deposition event occurs on the substrate segments 20aa, 20ab, 20ac, and 20ad in the vacuum chamber 23A by using the shadow mask plates 21aa, 21ab, 21ac, and 21ad, wherein the shadow mask plate 21aa corresponds to the substrate segment 20aa, the shade The cover plate 21ab corresponds to the substrate segment 20ab, the shadow mask plate 21ac corresponds to the substrate segment 20ac, and the shadow mask plate 21ad corresponds to the substrate segment 20ad;
  • the shadow mask plates 21ba, 21bb, 21bc, and 21bd in the vacuum chamber 23B are accurately aligned with the substrate segments 20ba, 20bb, 20bc, and 20bd by pushing the substrate by the actuator, that is, at time 2, by using the shadow mask plates 21ba, 21bb, 21bc and 21bd deposit the substrate segments 20ba, 20bb, 20bc and 20bd one by one in the vacuum chamber 23B;
  • the shadow mask plates 21ca, 21cb, 21cc, and 21cd in the vacuum chamber 23C are accurately aligned with the substrate segments 20ca, 20cb, 20cc, and 20cd, respectively, by pushing the substrate by the actuator, that is, at time 3, by using the shadow mask plates 21ca, 21cb, 21cc and 21cd deposit the substrate segments 20ca, 20cb, 20cc and 20cd one by one in the vacuum chamber 23C;
  • the shadow masks 21da, 21db, 21dc, and 21dd in the vacuum chamber 23D are accurately aligned with the substrate segments 20da, 20db, 20dc, and 20dd, respectively, by pushing the substrate by the actuator, that is, at time 3, by using the shadow masks 21da, 21db, 21dc and 21dd deposit the substrate segments 20da, 20db, 20dc, and 20dd one by one in the vacuum chamber 23D.
  • a 4 x 4 array of backplanes was formed via successive deposition events at times 1, 2, 3 and 4. It should be noted that when it is required to form a larger bottom plate, it is only necessary to increase the number of substrate segments and the number of shadow mask plates in each vacuum chamber, so that the present invention can be extended to manufacture substrates and displays of any size. It is not limited to the 4 ⁇ 4 array backplane and the 2 ⁇ 2 array backplane, that is, M can be generalized to the category of natural numbers. The entire deposition can be done by the same time, 1, 2, 3 and 4, and by four movements. For N, it is not limited to the four shown in the above embodiment, and may be set to a natural number greater than or equal to 2 as needed.
  • the shadow mask system is operable to overlap the shadow mask corresponding to the adjacent area in the basic unit and a part of the material of the deposition source at the time of deposition, thereby providing a stitching effect of the bottom board.
  • the spacing S between the vacuum chambers may be any suitable or required distance that enables the substrate to be transferred from the vacuum chamber to the vacuum chamber while the vacuum chamber can operate without interference.
  • the spacing S can be zero.
  • the spacing S can be suitably large to allow the substrate to have a wider range of dimensions when using half of the structure of the vacuum box.
  • the chamber 23E has shadow mask plates 21ea, 21fa, 21ga and 21ha, and the substrate comprises four basic units, wherein the substrate segments 20ea, 20eb, 20ec and 20ed constitute a basic unit, and the substrate segments 20fa, 20fb, 20fc and 20fd constitute A basic unit, the substrate segments 20ga, 20gb, 20gc and 20gd constitute a basic unit, and the substrate segments 20ha, 20hb, 20hc and 20hd constitute a basic unit; a 4 ⁇ 4 array can be formed by performing four depositions in the vacuum chamber 23E.
  • the bottom plate is the substrate segments 20ea, 20eb, 20ec and 20ed constitute a basic unit, and the substrate segments 20fa, 20fb, 20fc and 20fd constitute A basic unit, the substrate segments 20ga, 20gb, 20gc and 20gd constitute a basic unit, and the substrate segments 20ha, 20hb, 20hc and 20hd constitute a basic unit;
  • the present invention is implemented by using a moving substrate, which only needs to set N vacuum boxes according to the number N of regions in each basic unit; and when moving the shadow mask is adopted
  • a moving substrate which only needs to set N vacuum boxes according to the number N of regions in each basic unit; and when moving the shadow mask is adopted
  • the invention only needs to move in a vacuum box, that is, the invention does not need to set a large number of vacuum boxes as in the prior art, thereby the invention has the effect of simplifying the entire deposition system; meanwhile, the invention only needs to be N
  • the deposition of N areas in each basic unit is completed in time, and the bottom plate and the display screen of any size can be manufactured, so that the invention only needs to be moved N times during the movement, that is, the number of movements can be avoided.
  • a shadow mask plate only needs to perform a deposition operation when forming a bottom plate and a display screen, thereby enabling The deposited material in the deposition source is made to have an effect of being controlled.
  • the invention also provides a vapor deposition shadow mask method for a substrate of any size and a display screen, comprising the following steps:
  • the first region is the substrate segment 10a, and for the second embodiment, the first region is the substrate segments 20aa, 20ba, 20ca and 20da;
  • the second region is the substrate segment 10b, and for the second implementation
  • the second region is the substrate segments 20ab, 20bb, 20cb, and 20db;
  • steps C, D complete the deposition of N regions in each of the basic cells, where N is a natural number greater than or equal to two. As in the first embodiment and the second embodiment, it extends only to the third area and the fourth area.
  • the transmission device may be a substrate transmission device, and the vacuum box includes N pieces arranged in series, and different regions of each basic unit are respectively deposited in different vacuum boxes.
  • the transmission can also be a shadow mask transmission, in which case the vacuum box is one. In order to achieve the effect of stitching, when depositing adjacent regions in the basic unit, the corresponding shadow mask and a part of the material when the deposition source is deposited are overlapped.
  • the substrate has a basic unit, and the basic unit is divided into a plurality of regions, which merely refers to a basic unit that is regarded as being, rather than substantially substantially demarcated, to form an obvious basic unit. And area.

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Description

任意尺寸底板及显示屏的气相沉积荫罩板系统及其方法 技术领域
本发明涉及底板及显示屏领域，更具体的说涉及一种制作任意尺寸底板和显示屏时的气相沉积荫罩板系统及其方法。
背景技术
目前，国内外制造显示屏及底板的主流技术为光蚀刻技术，而光刻机及基板材料尺寸决定了产出的显示屏及底板的最大尺寸。现有技术无法做出超过其光刻机尺寸上限的底板及显示屏，且无法及时、迅速地满足客户的自定义尺寸底板和显示屏的需求，并且该技术还存在投资规模大，占地面积大、对环境要求高、产品单一和产品生产时间长等技术问题。
多年以来人们已经在微电子制造中使用气相沉积荫罩板工艺，气相沉积荫罩板工艺比光刻工艺便宜且容易很多，但是本领域普通技术人员还不支持用气相沉积荫罩板工艺制造大面积底板。
针对上述问题，人们开发出了诸如中国发明专利公告CN101027424B公开的'使用小面积荫罩板制造大面积底板的系统和方法'，如图1所示，其示出了通过在连续设置的沉积真空室314a和314b内部的荫罩板沉积工艺逐步形成包括基板段312a、312b、312c、312d、312e和312f的3×2阵列的底板310的典型制造工艺300；沉积真空室314a和314b分别包括荫罩板316a和316b。其是用多个连续基板段312上的多次沉积事件来形成一层底板310；具体的，在时间1时通过使用荫罩板316a，在沉积真空室314a内部的基板段312a上发生沉积事件；然后推进基板，并且在时间2时，通过使用荫罩板316a在沉积真空室314a内部的基板段312b上发生随后的沉积事件；然后推进基板，并且在时间3时，通过使用荫罩板316a在沉积真空室314a内部的基板段312c上发生随后的沉积事件；在沿基板段312a、312b和312c的行完成沉积事件时，将基板推进到沉积真空室314b，其中荫罩板316b相对于荫罩板316a偏移位置，以便形成基板段312的下一行。在时间4时通过使用荫罩板316b，在沉积真空室314b内部的基板段312d上发生沉积事件；然后推进基板，并且在时间5时通过使用荫罩板316b，在沉积真空室314b内部的基板段312e上发生沉积事件；然后推进基板，并且在时间6时通过使用荫罩板316b，在沉积真空室314b内部的基板段312f上发生沉积事件。
其在实际应用中确能实现使用小面积荫罩板制造大面积底板的功效，但是其仍然存在如下不足：
一、在针对大面积底板时，其在沉积时被分割为多行多列的基板段，即需要配套多个连续设置的沉积室并通过大量的沉积才能实现整个底板的成型，由此使得整个制造系统过于冗长；
二、在针对大面积底板时，由于需要大量的沉积次数，故荫罩板和基板之间定位机构会变得复杂，且亦容易出现因为荫罩板与基板段之间定位不精确而造成的相邻基板段之间连接性能差或相脱离的问题；
三、每块荫罩板对应的沉积源需要负责沉积一行或者列中所有的基板段，由此在沉积行列不等的底板或者大面积底板时，在对沉积源进行补充材料等方面亦存在不便之处。
有鉴于此，本发明人针对现有底板及显示屏制作方法的上述缺陷深入研究，遂有本案产生。
发明内容
本发明的第一目的在于提供一种任意尺寸底板及显示屏的气相沉积荫罩板系统，以解决现有技术中制造系统冗长、荫罩板与基板之间定位复杂而使相邻基板段之间连接性能差以及沉积源中沉积材料不便于补充的问题。
为了达成上述目的，本发明的解决方案是：
一种任意尺寸底板及显示屏的气相沉积荫罩板系统，包括：
至少一个真空室，每个真空室内均具有位于其中的M组荫罩板和沉积源；
基板，具有M个基本单元，每一基本单元均一致性地被分割为N个区域；
传动装置，用于使基板或荫罩板沿真空室的路径进行平移而使得在N个不同时间里，该M组荫罩板分别对应于M个基本单元中的不同区域；
其中，M为大于或等于1的自然数，N为大于或等于2的自然数。
进一步，N等于4。
进一步，该至少一个真空室为串联设置的N个真空室，并该传动装置为基板传动装置。
进一步，该至少一个真空室仅为一个，并该传动装置为荫罩板传动装置。
进一步，该荫罩板系统能操作于基本单元中相邻区域对应的荫罩板和沉积源沉积时的一部分材料相重叠。
本发明的第二目的在于提供一种任意尺寸底板及显示屏的气相沉积荫罩板方法，其中，包括如下步骤：
A、按照与完全位于真空箱内的荫罩板和沉积源可操作关系，将每组荫罩板和沉积源分别定位于每一基本单元的第一区域；
B、通过真空蒸镀将材料沉积在每一基本单元的第一区域；
C、通过传动装置将每组荫罩板和沉积源分别定位与每一基本单元的第二区域；
D、通过真空蒸镀将材料沉积在每一基本单元的第二区域；
E、重复步骤C、D而完成对每一基本单元中N个区域的沉积，其中N为大于或等于2的自然数。
进一步，N等于4。
进一步，该传动装置为基板传动装置，该真空箱则包括串联设置的N个，并每一基本单元的不同区域分别在不同的真空箱中沉积。
进一步，该传动装置为荫罩板传动装置，该真空箱则为一个。
进一步，在沉积基本单元中相邻区域时，使对应的荫罩板和沉积源沉积时的一部分材料相重叠。
采用上述结构后，本发明至少具有如下有益效果：
一、本发明采用移动基板的方式来实现时，其只需要根据每一基本单元中区域的个数N而设置N个真空箱即可；而当采用移动荫罩板的方式来实现时，则只需要在一个真空箱内移动即可，即本发明无需如现有技术般设置大量真空箱，由此本发明具有简化整个沉积系统的功效；
二、本发明仅需在N个时间内完成对每一基本单元中N个区域的沉积，即可完成对任意尺寸的底板及显示屏进行制造，由此本发明在移动时仅需移动N次即可，即能避免因为移动次数过多而造成相邻基本段之间连接性能差的问题；
三、本发明在采用移动基板进行沉积时，一块荫罩板在成型一个底板及显示屏时仅需要进行一次沉积操作，由此能使得沉积源中沉积材料具有便于控制的功效。
附图说明
图1为现有技术中一种气相沉积荫罩板系统制造进程的时序图；
图2为本发明第一实施例制造进程的时序图；
图3为本发明第二实施例制造进程的时序图；
图4为本发明第二实施例采用荫罩板传动时制造进程的时序图。
图中：
基板：10
基板段：10a、10b、10c、10d
荫罩板：11a、11b、11c、11d
真空室：13A、13B、13C、13D
基板：20
基板段：20aa、20ba、20ca、20da、20ab、20bb、20cb、20db、20ac、20bc、20cc、20dc、20ad、20bd、20cd、20dd、20ea、20eb、20ec、20ed
荫罩板：21aa、21ab、21ac、21ad、21ba、21bb、21bc、21bd、21ca、21cb、21cc、21cd、21da、21db、21dc、21dd、21ea、21fa、21ga、21ha
真空室：23A、23B、23C、23D、23E
底板：310
沉积真空室：314a、314b
基板段：312a、312b、312c、312d、312e、312f
荫罩板：316a、316b
间距：S
具体实施方式
为了进一步解释本发明的技术方案，下面通过具体实施例来对本发明进行详细阐述。
如图2所示，其示出的为本发明第一实施例制造进程的时序图，其中，该气相沉积荫罩板系统包括连续串联设置的4个真空室13A、13B、13C和13D以及可在真空室内移动的基板10和用于驱动基板10沿真空室的路径进行平移的传动装置（图中未示出）；该基板10仅具有1个基本单元，并该基本单元被分割为4个区域，该每个真空室内均具有位于其中的1组荫罩板和沉积源，即在本实施例中M等于1，而N则等于4；本实施例通过四次沉积，即可逐步形成2×2阵列的底板。
下面对本发明第一实施例的具体时序进行详细说明：
在时间1时，通过使用荫罩板11a，在真空室13A内的基板段10a上发生沉积事件；通过传动装置推动基板而使真空室13B中荫罩板11b能准确对准基板段10b，即在时间2时，通过使用荫罩板11b，在真空室13B内的基板段10b上发生沉积事件；再次通过传动装置推动基板而使真空室13C中荫罩板11c能准确对准基板段10c，即在时间3时，通过使用荫罩板11c，在真空室13C内的基板段10c上发生沉积事件；又通过传动装置推动基板而使真空室13D中荫罩板11d能准确对准基板段10d，即在时间4时，通过使用荫罩板11d，在真空室13D内的基板段10d上发生沉积事件。
如此，通过使用荫罩板，通过时间1、2、3、4时的连续沉积事件形成了2×2阵列的底板，其是应用于小面积底板的制作。
优选的，该荫罩板系统能操作于基本单元中相邻区域对应的荫罩板和沉积源在沉积时的一部分材料相重叠，从而提供底板的缝合效果。需要说明的是，各个真空室之间的间距S可以是任意合适或所需的距离，所述间距能够使基板从真空室传递到真空室同时，真空室可以无干扰的操作。为此，间距S可以为0。为了使用的目的，间距S可适当得大，以允许当使用真空箱的一半结构时，基板具有较宽范围的尺度。
当然在本实施例中，还可以做如下调整，即仅采用一个真空室，而在真空室内设置1组荫罩板和沉积源，而该传动装置则为荫罩板传动装置，在荫罩板传动装置的驱动下，通过时间1、时间2、时间3和时间4分别使得荫罩板能对应于不同的基板段10a、10b、10c和10d，而进行四次沉积，并实现形成2×2阵列的底板。
如图3所示，其示出的为本发明第二实施例制造进程的时序图，其中，该气相沉积荫罩板系统包括连续串联设置的4个真空室23A、23B、23C和23D以及可在真空室内移动的基板20和用于驱动基板20沿真空室的路径进行平移的传动装置（图中未示出）；该基板20具有4个基本单元，并每一基本单元被分割为4个区域，该每个真空室内均具有位于其中的4组荫罩板和沉积源，每一组荫罩板分别对应于一个基本单元中的一个区域，即在本实施例中M等于4，N也等于4；其中基板段20aa、20ba、20ca和20da构成一个基本单元，基板段20ab、20bb、20cb和20db构成一个基本单元，基板段20ac、20bc、20cc和20dc构成一个基本单元，基板段20ad、20bd、20cd和20dd构成一个基本单元。本实施例只需通过4次沉积，即可逐步形成4×4阵列的底板。
下面对本发明第二实施例的具体时序进行详细说明：
在时间1时，通过使用荫罩板21aa、21ab、21ac和21ad，在真空室23A内的基板段20aa、20ab、20ac和20ad上发生沉积事件，其中荫罩板21aa对应于基板段20aa，荫罩板21ab对应于基板段20ab，荫罩板21ac对应于基板段20ac，荫罩板21ad对应于基板段20ad；
通过传动装置推动基板而使真空室23B中荫罩板21ba、21bb、21bc和21bd分别准确对准基板段20ba、20bb、20bc和20bd，即在时间2时，通过使用荫罩板21ba、21bb、21bc和21bd在真空室23B内对基板段20ba、20bb、20bc和20bd一一进行沉积；
通过传动装置推动基板而使真空室23C中荫罩板21ca、21cb、21cc和21cd分别准确对准基板段20ca、20cb、20cc和20cd，即在时间3时，通过使用荫罩板21ca、21cb、21cc和21cd在真空室23C内对基板段20ca、20cb、20cc和20cd一一进行沉积；
通过传动装置推动基板而使真空室23D中荫罩板21da、21db、21dc和21dd分别准确对准基板段20da、20db、20dc和20dd，即在时间3时，通过使用荫罩板21da、21db、21dc和21dd在真空室23D内对基板段20da、20db、20dc和20dd一一进行沉积。
如此，通过使用荫罩板，经由时间1、2、3和4时的连续沉积事件形成了4×4阵列的底板。需要说明的是，当需要形成更大的底板时，只需要相应增加基板段的个数以及每个真空室中荫罩板的个数，如此本发明可以推广至制造任意尺寸的底板和显示屏，而不仅限于4×4阵列底板和2×2阵列底板，即M可以为推广到自然数的范畴。即可同样通过时间1、2、3和4，并通过四次移动即可完成整个沉积。对于N，亦不限于上述实施例中显示的四个，可以根据需要而设置为大于或等于2的自然数。
优选的，在本实施例中，该荫罩板系统能操作于基本单元中相邻区域对应的荫罩板和沉积源在沉积时的一部分材料相重叠，从而提供底板的缝合效果。需要说明的是，各个真空室之间的间距S可以是任意合适或所需的距离，所述间距能够使基板从真空室传递到真空室同时，真空室可以无干扰的操作。为此，间距S可以为0。为了使用的目的，间距S可适当得大，以允许当使用真空箱的一半结构时，基板具有较宽范围的尺度。
当然在本实施例中，还可以做如下调整，即仅采用一个真空室23E，通过移动荫罩板的方式而在时间1、2、3和4进行依次沉积；如图4所示，该真空室23E中具有荫罩板21ea、21fa、21ga和21ha，而该基板则包括四个基本单元，其中基板段20ea、20eb、20ec和20ed构成一个基本单元，基板段20fa、20fb、20fc和20fd构成一个基本单元，基板段20ga、20gb、20gc和20gd构成一个基本单元，基板段20ha、20hb、20hc和20hd构成一个基本单元；通过在真空室23E中进行四次沉积，即可形成4×4阵列的底板。
综上所述，本发明在采用移动基板的方式来实现时，其只需要根据每一基本单元中区域的个数N而设置N个真空箱即可；而当采用移动荫罩板的方式来实现时，则只需要在一个真空箱内移动即可，即本发明无需如现有技术般设置大量真空箱，由此本发明具有简化整个沉积系统的功效；同时，本发明仅需在N个时间内完成对每一基本单元中N个区域的沉积，即可完成对任意尺寸的底板及显示屏进行制造，由此本发明在移动时仅需移动N次即可，即能避免因为移动次数过多而造成相邻基本段之间连接性能差的问题；另外，本发明在采用移动基板进行沉积时，一块荫罩板在成型一个底板及显示屏时仅需要进行一次沉积操作，由此能使得沉积源中沉积材料具有便于控制的功效。
本发明还提供一种任意尺寸底板及显示屏的气相沉积荫罩板方法，其中，包括如下步骤：
A、按照与完全位于真空箱内的荫罩板和沉积源可操作关系，将每组荫罩板和沉积源分别定位于每一基本单元的第一区域；具体地，在第一实施例中，该第一区域即为基板段10a，而对于第二实施例，该第一区域即为基板段20aa、20ba、20ca和20da；
B、通过真空蒸镀将材料沉积在每一基本单元的第一区域；
C、通过传动装置将每组荫罩板和沉积源分别定位与每一基本单元的第二区域；具体地，在第一实施例中，该第二区域为基板段10b，而对于第二实施例，该第二区域为基板段20ab、20bb、20cb和20db；
D、通过真空蒸镀将材料沉积在每一基本单元的第二区域；
E、重复步骤C、D而完成对每一基本单元中N个区域的沉积，其中N为大于或等于2的自然数。如在第一实施例和第二实施例中，其只延伸到第三区域和第四区域。
其中，该传动装置可以为基板传动装置，该真空箱则包括串联设置的N个，并每一基本单元的不同区域分别在不同的真空箱中沉积。该传动装置也可以为荫罩板传动装置，此时该真空箱则为一个。为了起到缝合的效果，在沉积基本单元中相邻区域时，使对应的荫罩板和沉积源沉积时的一部分材料相重叠。
需要说明的是，在本发明中，基板具有基本单元，而该基本单元又被划分为多个区域，其仅仅是指一种被视为，而非基本实质上存在分界进而形成明显的基本单元和区域。
上述实施例和图式并非限定本发明的产品形态和式样，任何所属技术领域的普通技术人员对其所做的适当变化或修饰，皆应视为不脱离本发明的专利范畴。

Claims (10)

1、一种任意尺寸底板及显示屏的气相沉积荫罩板系统，其特征在于，包括：
至少一个真空室，每个真空室内均具有位于其中的M组荫罩板和沉积源；
基板，具有M个基本单元，每一基本单元均一致性地被分割为N个区域；
传动装置，用于使基板或荫罩板沿真空室的路径进行平移而使得在N个不同时间里，该M组荫罩板分别对应于M个基本单元中的不同区域；
其中，M为大于或等于1的自然数，N为大于或等于2的自然数。
2、如权利要求1所述的一种任意尺寸底板及显示屏的气相沉积荫罩板系统，其特征在于，N等于4。
3、如权利要求1所述的一种任意尺寸底板及显示屏的气相沉积荫罩板系统，其特征在于，该至少一个真空室为串联设置的N个真空室，并该传动装置为基板传动装置。
4、如权利要求1所述的一种任意尺寸底板及显示屏的气相沉积荫罩板系统，其特征在于，该至少一个真空室仅为一个，并该传动装置为荫罩板传动装置。
5、如权利要求1所述的一种任意尺寸底板及显示屏的气相沉积荫罩板系统，其特征在于，该荫罩板系统能操作于基本单元中相邻区域对应的荫罩板和沉积源沉积时的一部分材料相重叠。
6、一种任意尺寸底板及显示屏的气相沉积荫罩板方法，其特征在于，包括如下步骤：
A、按照与完全位于真空箱内的荫罩板和沉积源可操作关系，将每组荫罩板和沉积源分别定位于每一基本单元的第一区域；
B、通过真空蒸镀将材料沉积在每一基本单元的第一区域；
C、通过传动装置将每组荫罩板和沉积源分别定位与每一基本单元的第二区域；
D、通过真空蒸镀将材料沉积在每一基本单元的第二区域；
E、重复步骤C、D而完成对每一基本单元中N个区域的沉积，其中N为大于或等于2的自然数。
7、如权利要求6所述的一种任意尺寸底板及显示屏的气相沉积荫罩板方法，其特征在于，N等于4。
8、如权利要求6所述的一种任意尺寸底板及显示屏的气相沉积荫罩板方法，其特征在于，该传动装置为基板传动装置，该真空箱则包括串联设置的N个，并每一基本单元的不同区域分别在不同的真空箱中沉积。
9、如权利要求6所述的一种任意尺寸底板及显示屏的气相沉积荫罩板方法，其特征在于，该传动装置为荫罩板传动装置，该真空箱则为一个。
10、如权利要求6所述的一种任意尺寸底板及显示屏的气相沉积荫罩板方法，其特征在于，在沉积基本单元中相邻区域时，使对应的荫罩板和沉积源沉积时的一部分材料相重叠。
PCT/CN2011/070395 2010-12-16 2011-01-19 任意尺寸底板及显示屏的气相沉积荫罩板系统及其方法 WO2012079294A1 (zh)

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