WO2019075844A1 - 一种柔性基板及其制备方法、显示器 - Google Patents

一种柔性基板及其制备方法、显示器 Download PDF

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WO2019075844A1
WO2019075844A1 PCT/CN2017/112577 CN2017112577W WO2019075844A1 WO 2019075844 A1 WO2019075844 A1 WO 2019075844A1 CN 2017112577 W CN2017112577 W CN 2017112577W WO 2019075844 A1 WO2019075844 A1 WO 2019075844A1
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layer
flexible substrate
buffer layer
organic layer
inorganic
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PCT/CN2017/112577
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English (en)
French (fr)
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王选芸
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武汉华星光电半导体显示技术有限公司
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Priority to US15/740,708 priority Critical patent/US10815566B2/en
Publication of WO2019075844A1 publication Critical patent/WO2019075844A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a flexible substrate, a method for fabricating the same, and a display.
  • Flexible displays are an inevitable trend in the future development of displays due to their advantages of fashion, lightness, flexibility, folding, portability, high contrast, high reflectivity and wide viewing angle.
  • the quality of the flexible display is ensured by preventing the water and oxygen from entering the flexible display through the upper package structure and the underlying flexible substrate, respectively, wherein the flexible substrate comprises a single layer of a flexible substrate of PI (polyimide) structure and The flexible substrate of the layer PI structure, because the water-blocking oxygen capacity of the flexible substrate of the multi-layer PI structure is much larger than that of the single-layer PI structure, the flexible substrate of the multi-layer PI structure becomes the current mainstream choice, among which, the multilayer
  • the flexible substrate of the PI structure is generally constituted by alternately laminating a PI layer and an inorganic layer.
  • the adhesion between the PI layer and the inorganic layer is lowered due to the interface difference between the PI layer and the inorganic layer, and thus the flexible substrate of the multilayer PI structure may be peeled off between the PI layer and the inorganic layer when bent.
  • the risk of the water-blocking oxygen of the flexible substrate is reduced, which in turn leads to a decrease in the quality of the flexible substrate.
  • the invention mainly provides a flexible substrate, a preparation method thereof and a display, which aim to solve the problem that the organic layer and the inorganic layer are easily detached when the flexible substrate is bent, and the water-blocking oxygen resistance of the flexible substrate is lowered.
  • the present invention adopts a technical solution to provide a method for preparing a flexible substrate, the method comprising: forming a first organic layer on a substrate; forming a first buffer on the first organic layer a layer; forming an inorganic layer on the first buffer layer; forming a second buffer layer on the inorganic layer; forming a second organic layer on the second buffer layer; wherein the first organic layer Forming the first buffer layer on the layer includes depositing a silicide on the first organic layer by a chemical vapor deposition method to form the first buffer layer.
  • a flexible substrate including: a first organic layer formed on a base substrate; and a formed on the first organic layer a first buffer layer; an inorganic layer formed on the first buffer layer; and a second organic layer above the inorganic layer.
  • another technical solution adopted by the present invention is to provide a display including the above flexible substrate.
  • the present invention forms a first organic layer on a base substrate; forms a first buffer layer on the first organic layer; and forms an inorganic layer on the first buffer layer a method of forming a second organic layer over the inorganic layer such that adhesion between the first organic layer and the inorganic layer is enhanced by the first buffer layer, thereby reducing or even eliminating the first organic layer of the flexible substrate during the bending process
  • the risk of falling off from the inorganic layer enhances the water-blocking ability of the flexible substrate and improves the quality of the substrate.
  • FIG. 1 is a flow chart of a first embodiment of a method for preparing a flexible substrate provided by the present invention
  • FIG. 2 is a schematic structural view of a first embodiment of a flexible substrate provided by the present invention.
  • FIG. 3 is a flow chart of a second embodiment of a method for preparing a flexible substrate provided by the present invention.
  • FIG. 4 is a schematic structural view of a second embodiment of a flexible substrate provided by the present invention.
  • a first embodiment of a method for fabricating a flexible substrate includes:
  • polyimide can be coated on the base substrate 101 by a slit coating apparatus to form a polyimide film, and then the polyimide film is cured at a high temperature to form the first organic layer 102. .
  • the base substrate 101 is a glass substrate.
  • silicide may be deposited on the first organic layer 102 by chemical vapor deposition to form the first buffer layer 103.
  • the silicide is one or more of a-Si, SiN, and SiO.
  • the first buffer layer 103 is a single-layer structure.
  • the first buffer layer 103 may be a single layer structure formed of a mixture of a plurality of silicides in a-Si, SiN, and SiO, or may be various Each of the silicon compounds in the silicon compound separately forms a single layer structure, and the first buffer layer 103 is a multilayer structure in which the plurality of single layer structures are formed together.
  • the thickness of the first buffer layer 103 is 10 to 50 nm.
  • the thickness of the first buffer layer 103 may be 10 nm, 20 nm, 30 nm, 40 nm, and 50 nm.
  • SiN or/and SiO may be deposited on the first buffer layer 103 by a chemical vapor deposition method to form the inorganic layer 104, wherein when one of SiN or SiO is deposited, the inorganic layer 104 has a single layer structure.
  • the inorganic layer 104 may be a single layer structure formed by a mixture of SiN and SiO, or may be a two-layer structure in which SiN and SiO form a single layer structure, respectively.
  • the inorganic layer 104 has a thickness of 400 to 1200 nm.
  • the inorganic layer 104 may have a thickness of 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, 1100 nm, and 1200 nm.
  • the polyimide film can be coated on the inorganic layer 104 by a slit coating apparatus to form a polyimide film, and then the polyimide film can be formed at a high temperature to form a first layer on the inorganic layer 104.
  • Two organic layers 105 Two organic layers 105.
  • the first buffer layer 103 is formed between the first organic layer 102 and the inorganic layer 104 to enhance the adhesion between the first organic layer 102 and the inorganic layer 104, thereby reducing or even eliminating the embodiment.
  • the risk of the first organic layer 102 and the inorganic layer 104 falling off during the bending process of the flexible substrate enhances the water-blocking oxygen resistance of the flexible substrate and improves the quality of the substrate.
  • the steps S21 to S23 are the same as the steps S11 to S13 in the first embodiment.
  • the method in this embodiment further includes:
  • a silicide may be deposited on the inorganic layer 204 by a chemical vapor deposition method to form a second buffer layer 206.
  • the silicide is one or more of a-Si, SiN, and SiO.
  • the second buffer layer 206 is a single-layer structure.
  • the second buffer layer 206 may be a single layer structure formed of a mixture of a plurality of silicides in a-Si, SiN, and SiO, or may be various Each of the silicon compounds in the silicon compound forms a single layer structure alone, and the second buffer layer 206 is a multilayer structure in which the plurality of single layer structures are formed together.
  • the thickness of the second buffer layer 206 is 10 to 50 nm.
  • the thickness of the second buffer layer 206 may be 10 nm, 20 nm, 30 nm, 40 nm, and 50 nm.
  • polyimide can be coated on the second buffer layer 206 by a slit coating device to form a polyimide film, and then the polyimide film is cured at a high temperature to form a second buffer layer.
  • a second organic layer 205 is formed on 206.
  • a second buffer layer 206 is further formed between the inorganic layer 204 and the second organic layer 205 to enhance the adhesion between the second organic layer 205 and the inorganic layer 204, thereby reducing or even eliminating the embodiment.
  • the risk of the second organic layer 205 and the inorganic layer 204 falling off during the bending process of the flexible substrate further enhances the water-blocking oxygen resistance of the flexible substrate and improves the quality of the substrate.
  • the first embodiment of the flexible substrate provided by the present invention includes a first organic layer 102 formed on the base substrate 101, a first buffer layer 103 formed on the first organic layer 102, and a first buffer layer.
  • the material of the first buffer layer 103 is one or more of a-Si, SiN, and SiO, and the thickness of the first buffer layer 103 is 10 nm to 50 nm.
  • each layer in the flexible substrate of the present embodiment can be prepared by the method in the first embodiment.
  • the second embodiment of the flexible substrate provided by the present invention further includes a second buffer layer 206 formed on the inorganic layer 204.
  • the second organic layer 205 in this embodiment is formed on the second buffer layer 206.
  • the other structures in this embodiment are the same as the first embodiment of the flexible substrate, and the layer structures may be in the second embodiment.
  • the specific method refer to the steps in the second embodiment of the above method, and details are not described herein again.
  • the present invention also provides a display comprising the flexible substrate of any of the above embodiments.
  • the present invention forms a first organic layer on a base substrate; a first buffer layer on the first organic layer; an inorganic layer on the first buffer layer; and a second layer on the inorganic layer
  • the organic layer method is such that the adhesion between the first organic layer and the inorganic layer is enhanced by the first buffer layer, thereby reducing or even eliminating the risk of the first organic layer and the inorganic layer falling off during the bending process of the flexible substrate, and enhancing The water-blocking ability of the flexible substrate improves the quality of the substrate.

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  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

本发明提供了一种柔性基板及其制备方法、显示器，该方法包括在衬底基板上形成第一有机层；在第一有机层上形成第一缓冲层；在第一缓冲层上形成无机层；在无机层的上方形成第二有机层的方法。通过这种方法，本发明使得第一有机层以及无机层之间由于第一缓冲层而粘附性增强，进而降低甚至消除柔性基板在折弯过程中第一有机层与无机层发生脱落的风险，增强了柔性基板的阻水氧能力，提高了基板的品质。

Description

一种柔性基板及其制备方法、显示器
【技术领域】
本发明涉及显示技术领域，特别是涉及一种柔性基板及其制备方法、显示器。
【背景技术】
柔性显示器由于其具有时尚、轻薄、可弯曲、可折叠、易携带、高对比度、高反射性以及宽视角等优点而成为显示器未来发展的必然趋势。在柔性显示器中，分别通过上层的封装结构以及底层的柔性基板阻止水氧进入柔性显示器，来保障柔性显示器的品质，其中，柔性基板包括单层PI（聚酰亚胺）结构的柔性基板和多层PI结构的柔性基板，由于多层PI结构的柔性基板的阻水氧能力要远大于单层PI结构的柔性基板，因此，多层PI结构的柔性基板成为当前的主流选择，其中，多层PI结构的柔性基板一般由PI层和无机层交替层叠设置构成。
但是，PI层与无机层之间由于界面差异导致PI层与无机层之间的粘附性下降，因而多层PI结构的柔性基板在折弯时，PI层与无机层之间会有发生脱落的风险，从而导致柔性基板的阻水氧能力下降，进而导致柔性基板的品质下降。
【发明内容】
本发明主要是提供一种柔性基板及其制备方法、显示器，旨在解决柔性基板折弯时有机层与无机层容易脱落而导致柔性基板的阻水氧能力下降的问题。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种柔性基板的制备方法，该方法包括在衬底基板上形成第一有机层；在所述第一有机层上形成第一缓冲层；在所述第一缓冲层上形成无机层；在所述无机层上形成第二缓冲层；在所述第二缓冲层上形成第二有机层；其中，所述在所述第一有机层上形成第一缓冲层包括：通过化学气相沉积法在所述第一有机层上沉积硅化物以形成所述第一缓冲层。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种柔性基板，所述柔性基板包括：在衬底基板上形成的第一有机层；在所述第一有机层上形成的第一缓冲层；在所述第一缓冲层上形成的无机层；在所述无机层上方的第二有机层。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种显示器，所述显示器包括上述的柔性基板。
本发明的有益效果是：区别于现有技术的情况，本发明通过在衬底基板上形成第一有机层；在第一有机层上形成第一缓冲层；在第一缓冲层上形成无机层；在无机层的上方形成第二有机层的方法，使得第一有机层以及无机层之间由于第一缓冲层而粘附性增强，进而降低甚至消除柔性基板在折弯过程中第一有机层与无机层发生脱落的风险，增强了柔性基板的阻水氧能力，提高了基板的品质。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图，其中：
图1是本发明提供的柔性基板的制备方法第一实施例的流程图；
图2是本发明提供的柔性基板第一实施例的结构示意图；
图3是本发明提供的柔性基板的制备方法第二实施例的流程图；
图4是本发明提供的柔性基板第二实施例的结构示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
共同参阅图1和图2，本发明提供的柔性基板的制备方法第一实施例包括：
S11：在衬底基板101上形成第一有机层102；
具体的，可通过狭缝式涂布设备在衬底基板101上涂布聚酰亚胺以形成聚酰亚胺薄膜，然后将该聚酰亚胺薄膜高温固化成型即可形成第一有机层102。
可选的，衬底基板101为玻璃基板。
S12：在第一有机层102上形成第一缓冲层103；
具体的，可通过化学气相沉积法在第一有机层102上沉积硅化物以形成第一缓冲层103。
可选的，该硅化物为a-Si、SiN、SiO中的一种或多种，当硅化物为a-Si、SiN、SiO中的一种时，第一缓冲层103即为单层结构，当硅化物为a-Si、SiN、SiO中的多种时，第一缓冲层103可由a-Si、SiN、SiO中的多种硅化物的混合物形成的单层结构，也可以是多种硅合物中每一种硅合物单独形成一单层结构，而第一缓冲层103为这些多个单层结构共同形成的多层结构。
可选的，第一缓冲层103的厚度为10~50nm，在本实施例中，第一缓冲层103的厚度可以为10nm、20nm、30nm、40nm、50nm。
S13：在第一缓冲层103上形成无机层104；
具体的，可通过化学气相沉积法在第一缓冲层103上沉积SiN或/和SiO以形成无机层104，其中，当沉积SiN或SiO中的一种时，无机层104为单层结构，当沉积SiN和SiO时，无机层104可以为SiN和SiO的混合物形成的单层结构，也可以为SiN和SiO分别形成单层结构后共同构成的双层结构。
可选的，无机层104的厚度为400~1200nm，在本实施例中，无机层104的厚度可以为400nm、500nm、600nm、700nm、800nm、900nm、1000nm、1100nm、1200nm。
S14：在无机层104的上方形成第二有机层105。
具体的，可通过狭缝式涂布设备在无机层104上涂布聚酰亚胺以形成聚酰亚胺薄膜，然后将该聚酰亚胺薄膜高温固化成型即可在无机层104上形成第二有机层105。
本实施例中通过在第一有机层102以及无机层104之间形成第一缓冲层103，以增强第一有机层102与无机层104之间的粘附性，进而降低甚至消除本实施例中的柔性基板在折弯过程中第一有机层102与无机层104发生脱落的风险，增强了柔性基板的阻水氧能力，提高了基板的品质。
共同参阅图3及图4，本发明提供的柔性基板的制备方法第二实施例中步骤S21~S23与上述第一实施例中的步骤S11~S13相同，本实施例的方法进一步包括：
S24：在无机层204上形成第二缓冲层206；
具体的，可通过化学气相沉积法在无机层204上沉积硅化物以形成第二缓冲层206。
可选的，该硅化物为a-Si、SiN、SiO中的一种或多种，当硅化物为a-Si、SiN、SiO中的一种时，第二缓冲层206即为单层结构，当硅化物为a-Si、SiN、SiO中的多种时，第二缓冲层206可由a-Si、SiN、SiO中的多种硅化物的混合物形成的单层结构，也可以是多种硅合物中每一种硅合物单独形成一单层结构，而第二缓冲层206为这些多个单层结构共同形成的多层结构。
可选的，第二缓冲层206的厚度为10~50nm，在本实施例中，第二缓冲层206的厚度可以为10nm、20nm、30nm、40nm、50nm。
S25：在第二缓冲层206上形成第二有机层205。
具体的，可通过狭缝式涂布设备在第二缓冲层206上涂布聚酰亚胺以形成聚酰亚胺薄膜，然后将该聚酰亚胺薄膜高温固化成型即可在第二缓冲层206上形成第二有机层205。
本实施例中进一步在无机层204与第二有机层205之间形成第二缓冲层206，以增强第二有机层205与无机层204之间的粘附性，进而降低甚至消除本实施例中的柔性基板在折弯过程中第二有机层205与无机层204发生脱落的风险，进一步增强了柔性基板的阻水氧能力，提高了基板的品质。
进一步参阅图2，本发明提供的柔性基板第一实施例包括在衬底基板101上形成的第一有机层102、在第一有机层102上形成的第一缓冲层103、在第一缓冲层103上形成的无机层104、在无机层104上方的第二有机层105。
可选的，第一缓冲层103的材质为a-Si、SiN、SiO中的一种或多种，第一缓冲层103的厚度为10nm~50nm。
本实施例的柔性基板中的各层结构可由上述第一实施例中的方法制备而成，具体可参阅上述方法第一实施例中的各步骤，在此不再赘述。
进一步参阅图4，本发明提供的柔性基板第二实施例进一步包括在无机层204上形成的第二缓冲层206。
其中，本实施例中的第二有机层205形成于第二缓冲层206上，本实施例中的其他结构与上述柔性基板的第一实施例相同，且各层结构可由上述第二实施例中的方法制备而成，具体可参阅上述方法第二实施例中的各步骤，在此不再赘述。
本发明还提供的一种显示器，该显示器包括上述任一实施例中的柔性基板。
区别于现有技术，本发明通过在衬底基板上形成第一有机层；在第一有机层上形成第一缓冲层；在第一缓冲层上形成无机层；在无机层的上方形成第二有机层的方法，使得第一有机层以及无机层之间由于第一缓冲层而粘附性增强，进而降低甚至消除柔性基板在折弯过程中第一有机层与无机层发生脱落的风险，增强了柔性基板的阻水氧能力，提高了基板的品质。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。  

Claims (14)

  1. 一种柔性基板的制备方法，其中，所述方法包括：
    在衬底基板上形成第一有机层；
    在所述第一有机层上形成第一缓冲层；
    在所述第一缓冲层上形成无机层；
    在所述无机层上形成第二缓冲层；
    在所述第二缓冲层上形成第二有机层；
    其中，所述在所述第一有机层上形成第一缓冲层包括：
    通过化学气相沉积法在所述第一有机层上沉积硅化物以形成所述第一缓冲层。
  2. 根据权利要求1所述的方法，其中，所述硅化物为a-Si、SiN、SiO中的一种或多种。
  3. 根据权利要求1所述的方法，其中，所述第一缓冲层的厚度为10~50nm。
  4. 根据权利要求1所述的方法，其中，所述无机层的厚度为400~1200nm。
  5. 根据权利要求1所述的方法，其中，所述在所述无机层上形成第二缓冲层包括：
    通过化学气相沉积法在所述无机层上沉积硅化物以形成所述第二缓冲层。
  6. 根据权利要求5所述的方法，其中，所述第二缓冲层的厚度为10~50nm。
  7. 一种柔性基板，其中，所述柔性基板包括：
    在衬底基板上形成的第一有机层；
    在所述第一有机层上形成的第一缓冲层；
    在所述第一缓冲层上形成的无机层；
    在所述无机层上方的第二有机层。
  8. 根据权利要求7所述的柔性基板，其中，所述柔性基板进一步包括在所述无机层上形成的第二缓冲层，所述第二有机层形成于所述第二缓冲层上。
  9. 根据权利要求7所述的柔性基板，其中，所述第一缓冲层的材质为a-Si、SiN、SiO中的一种或多种。
  10. 根据权利要求7所述的柔性基板，其中，所述第一缓冲层的厚度为10~50nm。
  11. 根据权利要求7所述的柔性基板，其中，所述无机层的厚度为400~1200nm。
  12. 根据权利要求7所述的柔性基板，其中，所述第二缓冲层的材质为a-Si、SiN、SiO中的一种或多种。
  13. 根据权利要求7所述的柔性基板，其中，所述第二缓冲层的厚度为10~50nm。
  14. 一种显示器，其中，所述显示器包括如权利要求7中所述的柔性基板。
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CN107818990B (zh) * 2017-10-19 2020-03-10 武汉华星光电半导体显示技术有限公司 一种柔性基板及其制备方法、显示器
CN109671758A (zh) 2018-12-18 2019-04-23 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法、显示装置
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CN109887416B (zh) 2019-03-15 2021-12-10 京东方科技集团股份有限公司 柔性显示基板及其制造方法、显示装置
CN110854130A (zh) * 2019-10-24 2020-02-28 武汉华星光电半导体显示技术有限公司 一种柔性薄膜基板及其制备方法、显示面板、显示装置
CN111739922B (zh) * 2020-07-03 2022-06-14 武汉天马微电子有限公司 一种显示面板及显示装置

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