WO2019019237A1 - 蒸发源装置及蒸镀机 - Google Patents

蒸发源装置及蒸镀机 Download PDF

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WO2019019237A1
WO2019019237A1 PCT/CN2017/098339 CN2017098339W WO2019019237A1 WO 2019019237 A1 WO2019019237 A1 WO 2019019237A1 CN 2017098339 W CN2017098339 W CN 2017098339W WO 2019019237 A1 WO2019019237 A1 WO 2019019237A1
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blocking block
nozzle
container
block
disposed
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PCT/CN2017/098339
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English (en)
French (fr)
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沐俊应
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武汉华星光电半导体显示技术有限公司
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Priority to US15/578,091 priority Critical patent/US20190218656A1/en
Publication of WO2019019237A1 publication Critical patent/WO2019019237A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Definitions

  • the present invention relates to the field of organic light-emitting display manufacturing technology, and in particular, to an evaporation source device and an evaporation machine.
  • OLED Organic Light-Emitting Diode
  • OLED technology mainly includes small molecule OLED technology based on vacuum evaporation technology and polymer OLED technology based on solution process.
  • the vapor deposition machine is the main equipment for the production of small-molecule OLED devices that have been mass-produced at present, and the core part of the device is an evaporation source device.
  • the evaporation gas is prevented from being deposited toward the non-substrate region above the evaporation source, and a restriction plate is installed around the nozzle of the evaporation source chamber.
  • the organic vapor is ejected from the nozzle into an ellipsoid shape.
  • a large proportion of the material is deposited on the limiting plate, resulting in low utilization rate of the organic vapor deposition material, and the risk of material falling off after accumulating a certain thickness with an increase in the amount of organic material accumulated on the inner wall of the limiting plate, eventually clogging the nozzle It affects the continuous operation time of the vapor deposition machine and brings huge economic losses.
  • the present invention provides an evaporation source device and an evaporation machine, which can improve the utilization of the vapor deposition material while avoiding the occurrence of nozzle clogging.
  • An evaporation source device comprising a first container, a second container disposed in the first container for accommodating and heating an organic material, and a blocking block disposed outside the first container, the first container top, a nozzle and a vapor hole are respectively disposed on the top of the second container, and the blocking block is disposed around the nozzle hole of the nozzle. And the cross section of the nozzle hole is an inverted trapezoid.
  • the periphery of the nozzle hole is further provided with an annular auxiliary heating source for heating the inner wall of the nozzle hole.
  • the orifice is in the shape of a truncated cone or a prism.
  • the blocking block includes a strip-shaped first blocking block and a second blocking block disposed opposite to each other, and the first blocking block and the second blocking block are respectively disposed on two sides of the nozzle .
  • the nozzle has a strip shape, and the plurality of nozzle holes are provided, and all of the nozzle holes are opened on the nozzle.
  • the plurality of orifices are linearly distributed on top of the first container; the first barrier block and the second barrier block are respectively located at two of the linearly distributed orifices side.
  • the plurality of nozzle holes are arranged in a plurality of rows on top of the first container; the extending directions of the first blocking block and the second blocking block are parallel to each row.
  • the nozzle holes are arranged in the direction, and the first blocking block and the second blocking block are respectively located on opposite sides of the plurality of rows of the nozzle holes.
  • the blocking block includes a third blocking block disposed between the first blocking block and the second blocking block, the third blocking block being disposed in two adjacent rows Between the orifices.
  • the surface of the third block facing the adjacent two rows of the nozzle holes is a slope.
  • Another object of the present invention is to provide an evaporation machine comprising a vaporization source device as described.
  • the nozzle hole of the present invention has an inverted trapezoidal cross section, and a blocking block is arranged around the nozzle hole to prevent or limit the deposition of the organic material in the ineffective direction, and the organic material deposition phenomenon on the inner surface of the block is improved, and the evaporation is improved. At the same time as the material utilization rate, nozzle clogging is avoided.
  • FIG. 1 is a schematic structural view of a vapor deposition machine according to Embodiment 1 of the present invention.
  • Figure 2 is a cross-sectional view showing the longitudinal direction of the evaporation source device according to Embodiment 1 of the present invention
  • Figure 3 is a cross-sectional view showing the width direction of the evaporation source device according to Embodiment 1 of the present invention.
  • FIG. 4a is a top plan view of an evaporation source device according to Embodiment 1 of the present invention.
  • Figure 4b is a plan view of another evaporation source device according to Embodiment 1 of the present invention.
  • Figure 5 is a partial schematic structural view of an evaporation source device according to Embodiment 1 of the present invention.
  • Fig. 6 is a plan view showing an evaporation source device according to a second embodiment of the present invention.
  • the vapor deposition machine of the present invention mainly comprises an evaporation source device 1, which ejects organic material toward the surface of the substrate 2 above it, and forms a specific pattern on the surface of the substrate 2 by means of the baffle 3 having a pattern.
  • Organic film layer F Organic film layer F.
  • the evaporation source device of the present embodiment includes a first container 10, a second container 20 disposed in the first container 10 for accommodating and heating the organic material, and a second container 20 disposed outside the first container 10.
  • the blocking block 30, the top of the first container 10 and the top of the second container 20 are respectively provided with a nozzle 100 and a vapor hole 200.
  • the blocking block 30 is disposed around the nozzle hole 100a of the nozzle 100, and the nozzle hole 100a has an inverted trapezoidal cross section, and the first container Above 10, the flow rate of the organic material can be detected in real time by setting the flow monitor 4.
  • the blocking block 30 includes a strip-shaped first blocking block 31 and a second blocking block 32.
  • the nozzle 100 has a strip shape, and the top of the nozzle 100 is formed with a row of linearly arranged orifices 100a, a first blocking block 31 and a second
  • the blocking blocks 32 are respectively located on both sides of the linearly distributed orifices 100a.
  • the nozzle hole 100a may have a truncated cone shape, or as shown in Fig. 4b, the nozzle hole 100a may have a prismatic shape, and the inner wall of the nozzle hole has an opening shape.
  • the organic material Due to the vacuum setting in the first container 10, when the organic material is heated and vaporized in the second container 20, it is sequentially ejected from the vapor hole 200 and the nozzle 100 in a nearly linear trajectory, and the nozzle 100 is limited in its unique shape, and is ejected in an invalid direction.
  • the organic material is blocked or confined to be deposited only in the corresponding region of the substrate 2 above it in the direction defined by the nozzle 100, and the surface of the orifice 100a is rarely deposited with organic material, thereby improving material utilization.
  • the first blocking block 31 and the second blocking block 32 are both strip-shaped, and the extension length of both of them is not less than the arrangement length of the injection holes 100a, thereby realizing the limitation of the ejection direction of all the injection holes 100a.
  • an annular auxiliary heating source 40 for heating the inner wall of the injection hole 100a is provided on the outer periphery of the injection hole 100a of the present embodiment.
  • the auxiliary heating source 40 is disposed in the nozzle 100, adjacent to the surface of the nozzle hole 100a, and a cooling device (not shown) may be disposed on the periphery of the nozzle 100.
  • a cooling device (not shown) may be disposed on the periphery of the nozzle 100.
  • the evaporation source device 1 of the present embodiment includes a second container 20, a heat insulating layer 40, a heat source 50, a heat reflecting layer 60, and a PCW (Plant Cooling Water/Process Cooling Water, process) in order from the inside to the outside.
  • the cooling water system 70 and the temperature sensor 80, the second container 20 is selected from the crucible, and the heat insulating layer 50 is disposed between the heating source 50 and the second container 20, and the heating source 50 is inductively heated to the organic material in the second container 20.
  • Heating is performed, and the heat reflective layer 60 is disposed on the periphery of the heat source 50 to reduce heat loss as much as possible, and the PCW 70 serves as a heat dissipation system to cool the evaporation source device.
  • the temperature of the second container 20 can be collected by the temperature sensor 80 at the bottom of the second container 20, and the heating temperature can be controlled in real time according to the injection rate of the organic material detected by the flow monitor 4 to achieve uniform coating.
  • all the nozzle holes 100a are arranged in a plurality of rows on the top of the first container 10.
  • the extending directions of the first blocking block 31 and the second blocking block 32 are parallel to The row of the nozzle holes 100a is arranged, and the first blocking block 31 and the second blocking block 32 are respectively located on both sides of the plurality of rows of nozzle holes 100a.
  • the blocking block 30 includes a third blocking block 33 between the first blocking block 31 and the second blocking block 32, and the third blocking block 33 is disposed between the adjacent two rows of the injection holes 100a at the evaporation source device.
  • the spraying direction of the adjacent two rows of nozzle holes 100a is restricted in the width direction, and the faces of the third blocking blocks 33 facing the adjacent two rows of the nozzle holes 100a are inclined, so that the third blocking block 33 has a triangular cross section. Forming a wedge structure.
  • the nozzle hole of the present invention has an inverted trapezoidal shape, and a blocking block is arranged around the nozzle hole to block or limit the deposition of the organic material in the ineffective direction, and the inner surface of the block is improved by temperature control of the inner wall of the nozzle hole.
  • the deposition of organic materials improves the utilization of the evaporation material while avoiding nozzle clogging.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种蒸发源装置(1)，其中，包括第一容器(10)、设于第一容器(10)内用于容纳并加热有机材料的第二容器(20)以及设于第一容器(10)外的阻挡块(30,31,32,33)，第一容器(10)顶部、第二容器(20)顶部分别设有喷嘴(100)和蒸气孔(200)，阻挡块(30,31,32,33)设于喷嘴(100)的喷孔(100a)周围，且喷孔(100a)截面为倒置梯形。还公开了一种蒸镀机。

Description

蒸发源装置及蒸镀机 技术领域
本发明涉及有机发光显示器制作技术领域，尤其涉及一种蒸发源装置及蒸镀机。
背景技术
OLED(Organic Light-Emitting Diode，有机发光二极管)显示技术较之当前主流的液晶显示技术，具有对比度高、色域广、柔性、轻薄、节能等突出的优点。近年来，OLED显示技术逐渐在智能手机和平板电脑等移动设备、智能手表等柔性可穿戴设备、大尺寸曲面电视、白光照明等领域普及，发展势头强劲。
OLED技术主要包括以真空蒸镀技术为基础的小分子OLED技术和以溶液制程为基础的高分子OLED技术。蒸镀机是当前已量产的小分子OLED器件生产的主要设备，其设备核心部分为蒸发源装置。
常用的蒸发源装置中，为控制蒸镀角，避免蒸发气体朝蒸发源上方的非基板区域沉积，在蒸发源腔室的喷嘴周围安装有限制板，然而，有机蒸气从喷嘴喷出呈椭球状，较大比例的材料沉积于限制板上，造成有机蒸镀材料利用率低，并且，随着限制板内壁堆积的有机材料量增多而累积到一定厚度后，存在材料脱落的风险，最终堵塞喷嘴而影响蒸镀机连续运营时间，带来巨大的经济损失。
发明内容
鉴于现有技术存在的不足，本发明提供了一种蒸发源装置及蒸镀机，可以提高蒸镀材料利用率的同时，避免喷嘴堵塞情况的发生。
为了实现上述的目的，本发明采用了如下的技术方案：
一种蒸发源装置，包括第一容器、设于所述第一容器内用于容纳并加热有机材料的第二容器以及设于所述第一容器外的阻挡块，所述第一容器顶部、所述第二容器顶部分别设有喷嘴和蒸气孔，所述阻挡块设于所述喷嘴的喷孔周围， 且所述喷孔截面为倒置梯形。
作为其中一种实施方式，所述喷孔外围还设有对所述喷孔内壁加热的环形的辅助加热源。
作为其中另一种实施方式，所述喷孔为圆台形或棱台形。
作为其中一种实施方式，所述阻挡块包括相对设置的条状的第一阻挡块和第二阻挡块，所述第一阻挡块和所述第二阻挡块分别设于所述喷嘴的两侧。
作为其中一种实施方式，所述喷嘴为条形，所述喷孔为多个，所有的所述喷孔开设在所述喷嘴上。
作为其中一种实施方式，所述喷孔为多个，线性分布在所述第一容器的顶部；所述第一阻挡块和所述第二阻挡块分别位于线性分布的所述喷孔的两侧。
作为其中一种实施方式，所述喷孔为多个，呈多行排列在所述第一容器的顶部；所述第一阻挡块和所述第二阻挡块的延伸方向平行于每行所述喷孔的排列方向，且所述第一阻挡块和所述第二阻挡块分别位于多行所述喷孔的两侧。
作为其中一种实施方式，所述阻挡块包括设置在所述第一阻挡块和所述第二阻挡块之间的第三阻挡块，所述第三阻挡块设于相邻的两行所述喷孔之间。
作为其中一种实施方式，所述第三阻挡块上分别朝向相邻的两行所述喷孔的面为斜面。
本发明的另一目的在于提供一种蒸镀机，包括一种所述的蒸发源装置。
本发明的喷孔截面为倒置梯形，并在喷孔外围设有阻挡块以阻止或限制无效方向的喷出的有机材料沉积，并且改善了阻挡块的内表面的有机材料沉积现象，提高蒸镀材料利用率的同时，避免了喷嘴堵塞情况的发生。
附图说明
图1为本发明实施例1的蒸镀机的结构示意图；
图2为本发明实施例1的蒸发源装置的长度方向的一个剖面示意图；
图3为本发明实施例1的蒸发源装置的宽度方向的一个剖面示意图；
图4a为本发明实施例1的一种蒸发源装置的俯视图；
图4b为本发明实施例1的另一种蒸发源装置的俯视图；
图5为本发明实施例1的蒸发源装置的部分结构示意图；
图6为本发明实施例2的一种蒸发源装置的俯视图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
实施例1
参阅图1，本发明的蒸镀机主要包括蒸发源装置1，蒸发源装置1可朝其上方的基板2表面喷出有机材料，借助具有图案的挡板3，在基板2表面形成具有特定图案的有机膜层F。
结合图2和图3所示，本实施例的蒸发源装置包括第一容器10、设于第一容器10内用于容纳并加热有机材料的第二容器20以及设于第一容器10外的阻挡块30，第一容器10顶部、第二容器20顶部分别设有喷嘴100和蒸气孔200，阻挡块30设于喷嘴100的喷孔100a周围，且喷孔100a截面为倒置梯形，第一容器10上方可以通过设置流量监视器4实时检测有机材料的喷射速率。
阻挡块30包括相对设置的条状的第一阻挡块31和第二阻挡块32，喷嘴100为条形，喷嘴100的顶部形成有一排线性排列的喷孔100a，第一阻挡块31和第二阻挡块32分别位于线性分布的喷孔100a的两侧。如图4a所示，喷孔100a可以呈圆台形，也可以如图4b所示，喷孔100a呈棱台形，这样的喷孔内壁呈开口状。由于第一容器10内真空设置，当有机材料在第二容器20内加热气化后，依次自蒸气孔200、喷嘴100近似直线轨迹喷出，加之喷嘴100独特形状的限制，无效方向喷出的有机材料被阻止或限制而只能沿喷嘴100限定的方向沉积在其上方的基板2的相应的区域，喷孔100a表面极少有有机材料沉积，从而提高了材料利用率。
这里，第一阻挡块31、第二阻挡块32均为条状，二者的延伸长度均不小于喷孔100a的排列长度，实现对所有喷孔100a喷射方向的限制。
另外，本实施例的喷孔100a的外围还设有对喷孔100a内壁加热的环形的辅助加热源40。如图3所示，辅助加热源40设置在喷嘴100内，紧邻喷孔100a的表面，在喷嘴100的外围还可设置有冷却装置(图未示)。在蒸镀过程中，通过控制辅助加热源40对喷嘴100加热，可以防止有机材料沉积在喷孔100a内， 从而避免堵塞，同时，通过冷却装置可以在喷嘴100温度过高时对其进行降温，保证连续蒸镀。
如图5所示，本实施例的蒸发源装置1自内至外依次包括第二容器20、隔热层40、加热源50、热反射层60、PCW(Plant Cooling Water/Process Cooling Water，工艺冷却水系统)70以及温度传感器80，第二容器20选用坩埚，加热源50与第二容器20之间设置有隔热层40，加热源50通过感应式加热对第二容器20内的有机材料进行加热，热反射层60设置在加热源50外围，以尽可能滴减少热损失，而PCW70作为散热系统对蒸发源装置进行降温。通过第二容器20底部的温度传感器80可以实施采集第二容器20的温度，并根据流量监视器4检测到的有机材料的喷射速率实时控制加热温度，以实现均匀镀膜。
实施例2
如图6所示，与实施例1不同，本实施例中，所有的喷孔100a呈多行排列在第一容器10的顶部，第一阻挡块31和第二阻挡块32的延伸方向平行于每行喷孔100a的排列方向，且第一阻挡块31和第二阻挡块32分别位于多行喷孔100a的两侧。
另外，阻挡块30包括位于第一阻挡块31和第二阻挡块32之间的第三阻挡块33，第三阻挡块33设于相邻的每两行喷孔100a之间，在蒸发源装置的宽度方向上对相邻两行喷孔100a的喷射方向进行限制，该第三阻挡块33上分别朝向相邻的两行喷孔100a的面为斜面，使得第三阻挡块33的截面为三角形，形成楔形结构。
本发明的喷孔截面为倒置梯形，并在喷孔外围设有阻挡块以阻止或限制无效方向的喷出的有机材料沉积，并且通过对喷孔内壁进行温度控制，改善了阻挡块的内表面的有机材料沉积现象，提高蒸镀材料利用率的同时，避免了喷嘴堵塞情况的发生。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (20)

  1. 一种蒸发源装置，其中，包括第一容器、设于所述第一容器内用于容纳并加热有机材料的第二容器以及设于所述第一容器外的阻挡块，所述第一容器顶部、所述第二容器顶部分别设有喷嘴和蒸气孔，所述阻挡块设于所述喷嘴的喷孔周围，且所述喷孔截面为倒置梯形。
  2. 根据权利要求1所述的蒸发源装置，其中，所述喷孔外围还设有对所述喷孔内壁加热的环形的辅助加热源。
  3. 根据权利要求1所述的蒸发源装置，其中，所述喷孔为圆台形或棱台形。
  4. 根据权利要求1所述的蒸发源装置，其中，所述阻挡块包括相对设置的条状的第一阻挡块和第二阻挡块，所述第一阻挡块和所述第二阻挡块分别设于所述喷嘴的两侧。
  5. 根据权利要求4所述的蒸发源装置，其中，所述喷嘴为条形，所述喷孔为多个，所有的所述喷孔开设在所述喷嘴上。
  6. 根据权利要求4所述的蒸发源装置，其中，所述喷孔为多个，线性分布在所述第一容器的顶部；所述第一阻挡块和所述第二阻挡块分别位于线性分布的所述喷孔的两侧。
  7. 根据权利要求4所述的蒸发源装置，其中，所述喷孔为多个，呈多行排列在所述第一容器的顶部；所述第一阻挡块和所述第二阻挡块的延伸方向平行于每行所述喷孔的排列方向，且所述第一阻挡块和所述第二阻挡块分别位于多行所述喷孔的两侧。
  8. 根据权利要求7所述的蒸发源装置，其中，所述阻挡块包括设置在所述第一阻挡块和所述第二阻挡块之间的第三阻挡块，所述第三阻挡块设于相邻的两行所述喷孔之间。
  9. 根据权利要求8所述的蒸发源装置，其中，所述第三阻挡块上分别朝向相邻的两行所述喷孔的面为斜面。
  10. 根据权利要求2所述的蒸发源装置，其中，所述阻挡块包括相对设置的条状的第一阻挡块和第二阻挡块，所述第一阻挡块和所述第二阻挡块分别设于所述喷嘴的两侧。
  11. 一种蒸镀机，其中，包括蒸发源装置，所述蒸发源装置包括第一容器、设于所述第一容器内用于容纳并加热有机材料的第二容器以及设于所述第一容器外的阻挡块，所述第一容器顶部、所述第二容器顶部分别设有喷嘴和蒸气孔，所述阻挡块设于所述喷嘴的喷孔周围，且所述喷孔截面为倒置梯形。
  12. 根据权利要求11所述的蒸镀机，其中，所述喷孔外围还设有对所述喷孔内壁加热的环形的辅助加热源。
  13. 根据权利要求11所述的蒸镀机，其中，所述喷孔为圆台形或棱台形。
  14. 根据权利要求11所述的蒸镀机，其中，所述阻挡块包括相对设置的条状的第一阻挡块和第二阻挡块，所述第一阻挡块和所述第二阻挡块分别设于所述喷嘴的两侧。
  15. 根据权利要求14所述的蒸镀机，其中，所述喷嘴为条形，所述喷孔为多个，所有的所述喷孔开设在所述喷嘴上。
  16. 根据权利要求14所述的蒸镀机，其中，所述喷孔为多个，线性分布在所述第一容器的顶部；所述第一阻挡块和所述第二阻挡块分别位于线性分布的所述喷孔的两侧。
  17. 根据权利要求14所述的蒸镀机，其中，所述喷孔为多个，呈多行排列在所述第一容器的顶部；所述第一阻挡块和所述第二阻挡块的延伸方向平行于每行所述喷孔的排列方向，且所述第一阻挡块和所述第二阻挡块分别位于多行所述喷孔的两侧。
  18. 根据权利要求17所述的蒸镀机，其中，所述阻挡块包括设置在所述第一阻挡块和所述第二阻挡块之间的第三阻挡块，所述第三阻挡块设于相邻的两行所述喷孔之间。
  19. 根据权利要求18所述的蒸镀机，其中，所述第三阻挡块上分别朝向相邻的两行所述喷孔的面为斜面。
  20. 根据权利要求12所述的蒸镀机，其中，所述阻挡块包括相对设置的条状的第一阻挡块和第二阻挡块，所述第一阻挡块和所述第二阻挡块分别设于所述喷嘴的两侧。
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