KR101063192B1 - 하향 증착이 가능한 증착원 - Google Patents
하향 증착이 가능한 증착원 Download PDFInfo
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- KR101063192B1 KR101063192B1 KR1020080112435A KR20080112435A KR101063192B1 KR 101063192 B1 KR101063192 B1 KR 101063192B1 KR 1020080112435 A KR1020080112435 A KR 1020080112435A KR 20080112435 A KR20080112435 A KR 20080112435A KR 101063192 B1 KR101063192 B1 KR 101063192B1
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- 230000008021 deposition Effects 0.000 title claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 38
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 33
- 239000000758 substrate Substances 0.000 abstract description 15
- 230000008020 evaporation Effects 0.000 abstract description 13
- 238000001704 evaporation Methods 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000009826 distribution Methods 0.000 abstract description 4
- 238000001771 vacuum deposition Methods 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- 229910052711 selenium Inorganic materials 0.000 description 1
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- 238000005507 spraying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (5)
- 하측이 막힌, 증발시킬 물질을 담는 부분;상기 물질을 담는 부분의 물질로부터 증발된 증발물이 반사하여 물질 분출구로 유입되게 하는 물질 반사부; 및상기 물질을 담는 부분의 외벽과 도가니 외피의 사이에 상기 도가니 상단으로부터 하단까지 관통하는 일정 지름의 다수의 분출구;를 포함하는 도가니와:상기 도가니의 외 측에 위치하며 상기 도가니를 가열하기 위한 가열부:상기 가열부의 외 측에 위치하며 상기 가열부에서 발생한 열이 외부로 방출되는 것을 방지하기 위한 열 반사판:상기 열 반사판의 외 측을 둘러싸며, 상부에는 상판 및 하부에는 도가니를 고정할 수 있는 고정부를 갖는 하우징:을 포함하며,상기 물질 반사부는 상기 도가니 상단을 덮는 뚜껑이, 상기 물질을 담는 부분의 상단과 공간을 두고 고정되어 형성되며,상기 다수의 분출구는 방사상으로 배치되는 것을 특징으로 하는 하향식 증착원.
- 제 1항에 있어서, 상기 분출구를 형성함에 있어 분출구 간의 간격을 유지하여 상기 가열부에서 발생한 열이 상기 도가니 내부에 물질이 충진되는 공간에 효과적으로 전달되도록 하는 하향식 도가니를 포함하는 하향식 증착원.
- 제 1항에 있어서, 상기 도가니의 하측에서 분출구의 방향을 상기 도가니의 중심에서 멀어지는 각도로 일정 각도를 유지하도록 형성된 분출 방향 조절 노즐이 형성된 도가니를 포함하는 것을 특징으로 하는 하향식 증착원.
- 제 1항에 있어서, 상기 물질을 담는 부분과 도가니는 원통형 또는 직육면체형이고,상기 직육면체형은 밑면의 가로가 세로보다 길게 형성되어 선형 도가니를 형성하는 것을 특징으로 하는 하향식 증착원.
- 제 4항에 있어서, 상기 선형 도가니는, 관통하는 분출구를 구성함에 있어, 상기 선형 도가니의 상기 가로 측의 중심에서 양끝부분으로 갈수록 상기 분출구의 지름을 크게 형성한 선형 도가니를 포함하는 것을 특징으로 하는 하향식 증착원.
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KR1020080112435A KR101063192B1 (ko) | 2008-11-12 | 2008-11-12 | 하향 증착이 가능한 증착원 |
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KR1020080112435A KR101063192B1 (ko) | 2008-11-12 | 2008-11-12 | 하향 증착이 가능한 증착원 |
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KR20100053365A KR20100053365A (ko) | 2010-05-20 |
KR101063192B1 true KR101063192B1 (ko) | 2011-09-07 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109415800B (zh) * | 2016-08-02 | 2021-01-08 | 株式会社爱发科 | 真空蒸镀装置 |
WO2019054530A1 (ko) * | 2017-09-14 | 2019-03-21 | (주)알파플러스 | 진공 증발원 |
KR20220123012A (ko) * | 2020-01-16 | 2022-09-05 | 엘지전자 주식회사 | 증착용 도가니 및 이를 포함하는 증착 장치 |
CN113151786B (zh) * | 2021-04-12 | 2022-07-12 | 武汉华星光电技术有限公司 | 一种蒸镀装置 |
CN117702056B (zh) * | 2024-02-06 | 2024-05-24 | 上海升翕光电科技有限公司 | 显示屏的蒸镀设备 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004100002A (ja) * | 2002-09-11 | 2004-04-02 | Ulvac Japan Ltd | 蒸発源及びこれを用いた薄膜形成装置 |
KR100848709B1 (ko) * | 2007-03-29 | 2008-07-28 | 윤종만 | 하향식 증발원 |
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JP2004100002A (ja) * | 2002-09-11 | 2004-04-02 | Ulvac Japan Ltd | 蒸発源及びこれを用いた薄膜形成装置 |
KR100848709B1 (ko) * | 2007-03-29 | 2008-07-28 | 윤종만 | 하향식 증발원 |
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