WO2019008842A1 - 光電変換素子及び光学測定装置 - Google Patents

光電変換素子及び光学測定装置 Download PDF

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Publication number
WO2019008842A1
WO2019008842A1 PCT/JP2018/012400 JP2018012400W WO2019008842A1 WO 2019008842 A1 WO2019008842 A1 WO 2019008842A1 JP 2018012400 W JP2018012400 W JP 2018012400W WO 2019008842 A1 WO2019008842 A1 WO 2019008842A1
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photoelectric conversion
conversion element
silicon substrate
region
light receiving
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PCT/JP2018/012400
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English (en)
French (fr)
Japanese (ja)
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雫石　誠
武藤　秀樹
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雫石　誠
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Priority to CN201880029826.7A priority Critical patent/CN110622323A/zh
Publication of WO2019008842A1 publication Critical patent/WO2019008842A1/ja

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C3/00—Measuring distances in line of sight; Optical rangefinders
    • G01C3/02—Details
    • G01C3/06—Use of electric means to obtain final indication
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto

Definitions

  • the present invention relates to a photoelectric conversion element suitable for detecting radiation such as X-rays or near-infrared light, and an optical measurement device using the same.
  • Patent Document 1 X-rays are made incident from the side surface portion of the semiconductor substrate facing the thickness direction perpendicular to the semiconductor substrate surface, and photoelectric conversion is performed while the X-rays travel inside the semiconductor substrate in a direction parallel to the semiconductor substrate surface.
  • spectroscopic analysis for efficiently photoelectrically converting incident X-rays.
  • Patent Document 2 visible light or infrared light is made incident from the side surface portion of a semiconductor substrate, and photoelectric conversion is performed while infrared light or the like travels inside the semiconductor substrate in a direction parallel to the semiconductor substrate surface.
  • An example of spectral analysis is disclosed.
  • the surface of the semiconductor substrate is irradiated with the light from the lens at an angle of incidence or perpendicular to the surface of the semiconductor substrate constituting the semiconductor imaging device.
  • near-infrared light the X-rays, deeper the substrate depth direction, for example, have required several hundred [mu] m a depth of about several tens [mu] m.
  • Patent Document 3 a structure of a photoelectric conversion element suitable for detecting X-rays or near-infrared light (NIR) or the like from a side surface portion of a semiconductor substrate perpendicular to a semiconductor substrate surface and detecting it as an electric signal and its manufacturing method It is disclosed. Further, Patent Document 4 discloses a computer tomography apparatus and the like using this. Further, Patent Document 5 is a semiconductor imaging device in which the side surface portion of the semiconductor substrate in the direction perpendicular to the semiconductor substrate surface on which the integrated circuit is formed is a light receiving surface, and the light source portion is disposed on the semiconductor substrate surface or side surface portion. Discloses an imaging module and an imaging apparatus using the same.
  • Patent Document 6 discloses employing a silicon germanium photodiode as a photodiode for detection of infrared light, but does not show any specific structure of the silicon germanium photodiode. Further, compared to visible light such as near-infrared light, charge mixing (cross talk) to adjacent pixels can not be ignored in the long wavelength region, for example, measurement using a time-of-flight (TOF) distance measuring apparatus It is one of the causes of error in the results.
  • TOF time-of-flight
  • the intermediate layer between the photodiode and the microlens is separated between the respective pixels by a substance having a small refractive index, and the incident light whose optical path is changed by the microlens is totally reflected at the separated boundary.
  • the object of the present invention is to increase sensitivity, noise reduction, high speed readout, power consumption reduction, resolution increase, spectral sensitivity long wavelength, disturbance light, and the like in a photoelectric conversion element using a semiconductor material such as a silicon substrate. It is to make it possible to reduce crosstalk, and to realize a compact and high-precision optical measuring device using it.
  • the photoelectric conversion element of the present invention has a photoelectric conversion region whose light receiving surface is the side end of a silicon substrate, and a silicon germanium region containing germanium is provided in the photoelectric conversion region.
  • the silicon germanium region has a structure in which the position of the maximum concentration peak of germanium in the thickness direction of the silicon substrate is located near the center of the silicon substrate.
  • the high concentration impurity region forming the photoelectric conversion region contains any of arsenic, antimony, gallium or indium.
  • the silicon substrate preferably has a thickness of 5 ⁇ m to 20 ⁇ m, and the lower surface of the element isolation region surrounding the photoelectric conversion region is a surface on which the integrated circuit of the silicon substrate is formed Is formed extending to a depth in contact with the high concentration impurity layer formed on the opposite back surface side.
  • the photoelectric conversion element according to the present invention is a heavy metal material having an atomic number of 42 or more, such as molybdenum (Mo), from the top to the bottom of the element isolation region surrounding the photoelectric conversion portion region.
  • a metal light shielding film containing, preferably, a metal light shielding film containing tungsten is embedded.
  • the photoelectric conversion element according to the present invention has a structure in which a collimator layer for controlling transmission of X-rays is laminated on the upper side of the light receiving surface.
  • the photoelectric conversion device has a photoelectric conversion region whose light receiving surface is a side edge of a silicon substrate, preferably a silicon substrate having a thickness of 5 ⁇ m to 20 ⁇ m and surrounding the photoelectric conversion region.
  • the surface on which the lower integrated circuit of the silicon substrate is formed of a separated region formed to extend to the back side of the opposite side, and an internal element isolation region surrounding the photoelectric conversion area from the top of the isolation region is embedded with a metal reflection film, preferably a metal reflection film containing any of aluminum, copper, or gold, toward the lower part.
  • the photoelectric conversion element according to the present invention has a structure in which a microlens, an optical waveguide, or an optical member combining these is laminated on the upper part of the light receiving surface.
  • the photoelectric conversion element according to the present invention has a structure in which the dimension of the optical member in the thickness direction of the silicon substrate is larger than the dimension of the photoelectric conversion element in the thickness direction of the silicon substrate.
  • the position of the optical center line in the optical member in the thickness direction of the silicon substrate is located between the surface of the silicon substrate and a distance corresponding to 1 ⁇ 2 of the thickness of the silicon substrate.
  • the optical members are arranged as follows.
  • the optical member is a lenticular lens laminated along the light receiving surface of the side end of the silicon substrate.
  • the silicon germanium region containing germanium in the photoelectric conversion region extends along the direction parallel to the silicon substrate surface, and the position of the maximum concentration peak of germanium in the silicon substrate thickness direction is optical The positions of the optical centers in the silicon substrate thickness direction of the members are substantially the same.
  • the photoelectric conversion element according to the present invention preferably has a width of 1 ⁇ m to 20 ⁇ m between the light receiving surface and the photoelectric conversion region, from the light receiving surface toward the inside of the semiconductor substrate.
  • a p-type high concentration impurity region containing boron or an n-type high concentration impurity region containing phosphorus is disposed in the inner region.
  • two or more side end portions of the silicon substrate are used as light receiving surfaces.
  • the width of the photoelectric conversion region is formed rather Semama towards the inside direction of the silicon substrate from the light receiving surface.
  • the photoelectric conversion element according to the present invention comprises a metal reflection film, preferably a metal containing any of aluminum, copper, or gold on a silicon substrate on the upper side and the lower side of a photoelectric conversion region formed inside a silicon substrate.
  • a reflective film is laminated.
  • the shape of the element isolation region at a position facing the light receiving surface is formed non-parallel to the light receiving surface on a plan view.
  • the shape of the element isolation region between the pixels is formed so as to narrow the width of the photoelectric conversion region from the light receiving surface toward the inner direction of the silicon substrate on the XY plane view. It is.
  • the photoelectric conversion element according to the present invention has a structure in which a metal reflection film having an opening on a light receiving surface and an optical member for introducing incident light into the opening are stacked on the opening.
  • the photoelectric conversion element according to the present invention has a wavelength filter formed of two parallel and opposing translucent reflection films.
  • the stacked photoelectric conversion device according to the present invention has a structure in which two or more of the above photoelectric conversion devices are stacked in the thickness direction of the silicon substrate.
  • An optical measuring device is an optical measuring device using the photoelectric conversion element, wherein a plurality of optical fibers are respectively mounted on a plurality of light receiving windows arranged in a line of the photoelectric conversion element, and the plurality A two-dimensional light receiving surface is formed by arranging a plurality of optical fibers such that the other end of the optical fiber cable obtained by bundling the optical fibers is one or a plurality of two-dimensional light receiving surfaces.
  • the distance measuring device has a light source unit that emits light in synchronization with the measurement timing of the optical measuring device.
  • the distance measuring device has two or more line-shaped light receiving portions or two-dimensional light receiving surfaces formed by the other end of the optical fiber cable at spatially separated positions, and is sent from two or more light receiving surfaces.
  • the distance measuring apparatus has a structure in which the light information is detected and read out by a single photoelectric conversion element.
  • NIR near-infrared light
  • the wavelength range of near-infrared light (NIR) is called “the window of a living body”, which is relatively easy to transmit human tissue as compared to other wavelength ranges, and it is considered that it is hard to damage human eyes Because it is The present invention improves sensitivity to near-infrared light (NIR), realizes high-speed readout equivalent to a line sensor, eliminates crosstalk between adjacent pixels, the sun, artificial illumination light, other disturbance light and background light Since the influence of the etc. is suppressed, for example, a high precision distance measuring device etc. with extremely small distance measurement error is realized.
  • various X-ray diagnostic imaging apparatuses, X-ray measurement apparatuses and the like realizing high resolution, high speed reading, low exposure dose, high durability, reliability and the like are realized.
  • FIG. 1 is a perspective view of the photoelectric conversion element 100 according to the present invention and its three-dimensional coordinate axis
  • (b) is an XY plane view for explaining a circuit block of the photoelectric conversion element 100.
  • (A) is sectional drawing of the photoelectric conversion element 100 in the position of broken-line arrow A-A 'in Fig.1 (a).
  • (B) is a spectrum diagram of the photoelectric conversion element 100.
  • A) is sectional drawing of the photoelectric conversion element 101 which concerns on the other Example of this invention
  • (b) is XY for demonstrating the structure of the photoelectric conversion element 102 which concerns on the modification of the photoelectric conversion element 101. it is a plan view.
  • FIG. 6A is a plan view of principal parts of a photoelectric conversion element 104 according to another embodiment of the present invention.
  • (B) is a cross-sectional view taken along a line B-B 'in (a)
  • (c) is a cross-sectional view taken along a line C-C'.
  • (A) is principal part sectional drawing seen from the YZ plane of the photoelectric conversion element 105 which concerns on the other Example of this invention
  • (b) is the photoelectric conversion element 106 which concerns on the other Example of this invention It is principal part sectional drawing seen from the YZ plane.
  • FIG. 8C is a cross-sectional view of the micro lenses 61 of the photoelectric conversion element 108 as viewed from the YZ plane.
  • FIG. 6A is a plan view of principal parts of a photoelectric conversion element 112 according to another embodiment of the present invention.
  • (B) is the principal part sectional view seen from the YZ plane in the DD 'section shown to (a)
  • (c) is the photoelectric conversion element 112 seen from the Y-axis direction of the incident light side It is principal part sectional drawing of a case.
  • (A) is principal part sectional drawing seen from the YZ plane of the photoelectric conversion element 113 which concerns on the other Example of this invention,
  • (b) is seen from the Y-axis direction of the incident light side of the photoelectric conversion element 113.
  • FIG. (A) is a principal part XY plane view of the photoelectric conversion element 114 based on the other Example of this invention
  • (b) is a principal part X- of the photoelectric conversion element 115 based on the other Example of this invention
  • (A) is principal part sectional drawing seen from the YZ plane of the photoelectric conversion element 116 which concerns on the other Example of this invention
  • (b) is a transmission-spectroscopy figure of the wavelength filter 40.
  • FIG. (C) is a conceptual diagram for demonstrating the ranging apparatus 150, the ranging object 160, background light, etc.
  • FIG. (A) is a top view which shows the structure of the optical measuring device 200.
  • (B) is an XY plane view for explaining a structure in which a plurality of optical fibers are connected to the photoelectric conversion element 111 according to another embodiment of the present invention.
  • (C) and (d) are plan views for explaining the shapes of the optical fiber light receiving surfaces 55-1 and 55-2, respectively.
  • FIG. 1A shows a perspective view of the photoelectric conversion element 100 and three-dimensional coordinate axes.
  • the silicon substrate surface on which the integrated circuit is formed is taken as an XY plane, and the direction perpendicular to the silicon substrate surface, that is, the thickness direction of the silicon substrate 1 is defined as the Z axis.
  • a plurality of light receiving windows 5 for detecting incident light are disposed on the side surface of the silicon substrate 1 facing the XZ plane.
  • the side surface portion of the silicon substrate 1 in which the light receiving window 5 is disposed will be referred to as a light receiving surface.
  • the photoelectric conversion element 100 is formed, for example, on a p-type silicon substrate (1), and constitutes a pn photodiode that performs photoelectric conversion by the region 7 in which a high concentration n-type impurity is introduced.
  • the incident light 2 is incident from the side surface of the silicon substrate 1, the light signal is converted into an electrical signal in the pn photodiode portion.
  • the n-type impurity region 7 which enables photoelectric conversion is formed extending from the vicinity of the side surface of the silicon substrate along the Y axis (the lower side in the drawing) and along the surface of the silicon substrate.
  • the extension distance of the high concentration n-type impurity region 7 can be easily designed and manufactured by a circuit design pattern and a photolithography process, so that, for example, optimum photoelectric conversion efficiency can be obtained according to incident light wavelength. can.
  • the extension distance of the high concentration n-type impurity region 7 is about 4 ⁇ m, but for example, near infrared light (wavelength 700 to 1300 nm)
  • the extension distance of the n-type impurity region 7 is required to be 10 ⁇ m or more, for example, about 50 to 100 ⁇ m. It is easy to set the extension distance in the substrate depth (Z-axis) direction of the high concentration n-type impurity region 7 to about 4 ⁇ m by a general manufacturing process of a semiconductor device, that is, a thermal diffusion method or an ion implantation method of impurities.
  • the extension distance in the substrate depth (Z-axis) direction of the high concentration n-type impurity region 7 is a long-time high temperature thermal diffusion process or a high acceleration voltage An ion implanter is required. Further, even if such a deep n-type impurity region 7 can be formed, a high drive voltage of about several tens to 100 volts (v) is required.
  • the surface of the light receiving surface in which the light receiving windows 5 are arranged may be covered with a thin silicon oxide film 3.
  • Mechanical reduces the crystal defects due to thermal damage, and it is possible to protect the photoelectric conversion elements 100 from contamination such as heavy metals and reactive chemicals from the outside. Furthermore, sensitivity can also be improved by laminating an anti-reflection film not shown.
  • reference numeral 4 denotes an input / output terminal (contact pad) for making an electrical contact with an external circuit
  • the circuit block 9 is a signal readout for reading out signal charge from a pn photodiode serving as a photoelectric conversion unit.
  • a scanning circuit, a circuit block 11 is a timing pulse generating circuit (TG) for supplying necessary control signals inside the photoelectric conversion element 100, and a circuit block 13 is a digital signal processing circuit for processing a digitized image signal (DSP)
  • the circuit block 15 is an AD conversion circuit (ADC) for digitally converting the read electric signal
  • the circuit block 17 is an interface circuit (I / F) for communicating with an external element.
  • the signal readout scanning circuit 9 is provided with a noise removal circuit such as a floating diffusion amplifier (FDA) and a sample hold circuit (S / H) in the vicinity of each photoelectric conversion unit. Therefore, since weak light charges can be detected and integrated on a single semiconductor substrate, sensitivity variation in the photoelectric conversion portion can be minimized.
  • on-chip ADCs and DSPs provide high speed, low noise and low power consumption digital signal outputs.
  • the side surface portion of the silicon substrate as the light receiving surface, high photoelectric conversion efficiency can be obtained even if the penetration distance of incident light is, for example, several tens of ⁇ m or more, and high voltage driving is not required.
  • high detection sensitivity to near infrared light and the like can be obtained, and on-chip formation of peripheral circuits such as TG, ADC or DSP can be facilitated, and each image sensor or each pixel group Parallel AD conversion becomes possible, and speeding up of signal processing and reduction of driving frequency realize reduction of power consumption or calorific value.
  • a plurality of adjacent pixels are formed on the side of the same photoelectric conversion element. Can be minimized. Conventionally, it becomes easy to form a deep photoelectric conversion region in the substrate thickness direction which requires a high temperature and long time thermal diffusion process of impurities or a high energy ion implantation apparatus, and further, by photolithography, that is, a mask design, The length of the photoelectric conversion region in the direction parallel to the Y plane can be freely set.
  • circuit block (11, etc.) is formed in a region opposite to the light receiving surface side across the photoelectric conversion region, a structure for detecting light incident on the conventional silicon substrate surface
  • the circuit block is less susceptible to the cause of malfunction or noise due to incident light and other stray light.
  • FIG. 2 (a) is a cross-sectional structural view of a portion indicated by a broken line arrow AA 'in FIG. 1 (a), and FIG. 2 (b) is a spectrum of the photoelectric conversion element 100 and a conventional silicon photodiode. it is the sensitivity spectrum. As shown in FIG.
  • a silicon germanium (SiGe) region 6 containing germanium indicated by a broken line is formed in the photodiode region to be configured, and the distribution thereof extends in a direction parallel to the substrate surface, that is, along the incident light direction.
  • the right side of the figure shows the distribution of the germanium content (Conc.) In the thickness direction of the Si substrate (Z-axis direction).
  • the concentration of germanium does not necessarily have to be uniform in the thickness direction of the Si substrate, and the maximum concentration peak may be set in the vicinity of the center in the thickness direction of the Si substrate as illustrated.
  • the incident light is to be incident on the Si substrate surface from the left side of the figure.
  • Such a concentration distribution has an advantage that it can be easily formed by ion implantation of germanium ions and a subsequent thermal diffusion step, and since most incident light passes through the SiGe region 6 having high concentration germanium, the photoelectric conversion element 100
  • the spectral sensitivity spectrum of can be extended to the long wavelength side.
  • 39 is a read gate electrode
  • 35 is a reset terminal
  • 37 is a floating diffusion layer (also called floating diffusion or FD)
  • 43 is a reset drain
  • 41 is a source follower amplifier (SFA).
  • FIG. 2B is a relative spectral sensitivity (R.S.) spectrum (solid line shown by SiGe-PD in the figure) of the photoelectric conversion element 100 with respect to the incident light wavelength ( ⁇ ).
  • R.S. relative spectral sensitivity
  • FIG. 2B is a relative spectral sensitivity (R.S.) spectrum (solid line shown by SiGe-PD in the figure) of the photoelectric conversion element 100 with respect to the incident light wavelength ( ⁇ ).
  • R.S. relative spectral sensitivity
  • the length of the silicon germanium region 6 in the traveling direction of the incident light is 50 ⁇ m.
  • Si-PD silicon alone
  • spectral sensitivity tends to drop sharply if the wavelength is longer than 900 nm (nanometers), and when used in the near infrared region, it can not always be said to be sufficient spectral sensitivity It was.
  • the spectral sensitivity on the long wavelength side is 1000 nm or more.
  • the magnification has been expanded to around 1100 nm.
  • the photoelectric conversion region made of silicon germanium also has the effect of improving the X-ray detection sensitivity.
  • the atomic number of germanium is 32, which is larger than the atomic number 14 of silicon.
  • FIG. 3 (a) The cross-sectional structure of the main part of the photoelectric conversion element 101 according to the second embodiment is shown in FIG. 3 (a), and the XY plane structure is shown in FIG. 3 (b).
  • the cross-sectional view of FIG. 3A is a cross-sectional view parallel to the YZ plane, as in FIG. 2A.
  • a silicon germanium (SiGe) region containing germanium may be formed in the vicinity of the photoelectric conversion region formed inside the semiconductor substrate 1.
  • Phosphorus (P) is generally doped in the n-type high concentration impurity region 7 constituting the photodiode of the photoelectric conversion region.
  • an element having an atomic number larger than that of phosphorus (P) is used in the n-type high concentration impurity region. That is, when the silicon substrate (or well) is p-type, arsenic (As) or antimony (Sb) is used. The right side of the figure shows the distribution of the arsenic (As) or antimony (Sb) content (Conc.) In the thickness direction of the Si substrate (Z-axis direction). The concentration of arsenic or antimony does not have to be uniform in the thickness direction of the Si substrate, and may be distributed in the region through which the incident light 2 passes as shown.
  • Such concentration distribution has an advantage that it can be easily formed by ion implantation of arsenic or antimony ions and a subsequent thermal diffusion step or the like.
  • the silicon substrate (or well) is n-type, gallium (Ga) or indium (In) is used as the p-type high concentration impurity region. This is because the atomic number is larger than that of boron (B), which was conventionally suitable for deep photodiode formation.
  • the spectral sensitivity spectrum for X-rays can be enhanced or extended to a higher energy side, and the spectral sensitivity spectrum for near infrared light can be enhanced or lengthened. It can be expanded to the wavelength side.
  • FIG. 3B is an XY plan view of a photoelectric conversion element 102 according to another modification of the photoelectric conversion element 101 in the second embodiment.
  • a collimator between an X-ray detector and an object through which X-rays are transmitted, a measure is taken to shield unnecessary X-rays incident in an oblique direction.
  • a monolithic X-ray detectable photoelectric conversion element using a silicon substrate is realized as in the photoelectric conversion element according to the above embodiment, the miniaturization of the pixels is facilitated.
  • the photoelectric conversion element 102 shown in FIG. 3B has a structure in which the collimator member 45 is directly stacked on the light receiving surface in which the light receiving windows are arranged.
  • the semiconductor substrate 1 and the collimator 45 are integrally formed with a support (not shown).
  • the collimator member 45 is, for example, a vapor-grown thin film containing tungsten atoms, and the length in the Y-axis direction is, for example, It can be set to 10 micrometers or more and 3 millimeters or less.
  • FIGS. 4 (a) and 4 (b) A third embodiment will be described with reference to FIGS. 4 (a) and 4 (b).
  • 4 (a) is a cross-sectional view of the main part of the photoelectric conversion element 103
  • FIG. 4 (b) is a cross-sectional view similar to the cross-sectional view taken along the broken line arrow AA 'in FIG. It is a spectral sensitivity spectrum of the photoelectric conversion element 100 and the photoelectric conversion element 102 which concerns on a present Example.
  • the length L is from the light receiving surface side, which is the inside of the silicon substrate 1, to which the incident light 2 is irradiated, to the inside (right in the drawing) direction of the silicon substrate 1.
  • the high concentration impurity region 33 is formed.
  • the high concentration impurity region 7 to form the photoelectric conversion region is formed so as to further positioned inside (drawing on the right) direction of the silicon substrate 1 than the high concentration impurity region 33.
  • the extension distance L of the high concentration impurity region 33 is, for example, not less than 1 ⁇ m and not more than 20 ⁇ m. If the silicon substrate 1 is a p-type semiconductor substrate, the high concentration impurity region 33 is a p-type high concentration impurity region containing boron (B), and if the silicon substrate 1 is an n-type semiconductor substrate, high.
  • the concentration impurity region 33 is an n-type high concentration impurity region containing phosphorus (P).
  • FIG. 4B is a relative spectral sensitivity (R.S.) spectrum of the photoelectric conversion element 103 with respect to the incident light wavelength ( ⁇ ). That is, it is a relative spectral sensitivity spectrum (solid line indicated by L2) when the extension distance L2 of the high concentration impurity region 33 is 10 ⁇ m, and similarly, the extension distance of the side surface high concentration impurity region 21 in the photoelectric conversion element 100 It is a relative spectral sensitivity spectrum (broken line shown by L1) in case L1 is 0.05 micrometer. As shown spectrum of the photoelectric conversion element 103 (solid line) in the present embodiment, rapidly sensitivity in a short wavelength side is attenuated than the incident light wavelength 800 nm.
  • R.S. relative spectral sensitivity
  • the photoelectric conversion element 103 has a function of a low pass filter that attenuates the detection sensitivity of ultraviolet light and visible light. Therefore, for example, by using the photoelectric conversion element 103, it is possible to realize a near-infrared light detection device that is less susceptible to disturbance light including visible light and the like in a measurement environment.
  • FIG. 5 (a) is an XY plan view of the photoelectric conversion element 104 suitable for X-ray detection, for example, and FIG. 5 (b) is a cross-sectional view of the BB ′ portion in FIG. 5 (a) FIG. 5 (c) is a cross-sectional view of the CC ′ portion in FIG. 5 (a).
  • the photoelectric conversion element 104 is, for example, an area containing germanium (Ge) (an area 6 indicated by a broken line in FIGS. 5B and 5C). The position in the Z-axis direction is approximately near the center of the silicon substrate 1.
  • the thickness (d) in the Z-axis direction of the silicon substrate is preferably 5 to 20 ⁇ m, so that the increase in resistance of the silicon substrate 1 used can be avoided, and the element isolation region (8-1, 8-2) Can be easily formed.
  • the element isolation regions 8-1 and 8-2 are formed to such a depth that they are in contact with the high concentration (p-type) impurity layer 25 on the back surface of the semiconductor substrate, and are similar to the shallow trench isolation (STI).
  • a trench is dug in a silicon substrate corresponding to the above, and a CVD oxide film such as SiO.sub.2 is embedded therein.
  • the light shielding film 10 having a heavy metal having an atomic number of 42 (molybdenum) or more is embedded in the element isolation region. More preferably, for example, a light shielding film containing tungsten is used. This is because the shielding effect against X-rays is high.
  • the element isolation regions 8-1 and 8-2, and the light shielding film 10 have a depth Z that reaches the light shielding film 31 formed on the back surface of the photoelectric conversion element 104.
  • this structure as shown in FIG. 5B, for example, it is possible to reduce the risk of the incident X-ray penetrating the photoelectric conversion region and entering the pixel signal scanning and reading circuit unit side.
  • FIG. 5C the risk of part of incident X-rays leaking to adjacent pixels can be reduced.
  • both the extending direction of the light shielding film and the incident direction of the incident light 2 are along the Y-axis direction in FIG. 5 (a).
  • the photoelectric conversion region is expanded in the substrate thickness direction to enhance the sensitivity of X-ray and near infrared light (NIR).
  • the structure of the element isolation region and the structure of the photoelectric conversion region can be realized without contradiction, and the manufacturing method is also easy. As a result, it is possible to effectively suppress crosstalk between adjacent pixels even when long-wavelength light such as X-rays and near-infrared light are incident.
  • FIG. 6A is a cross-sectional view of main parts parallel to the YZ plane of the photoelectric conversion element 105 as viewed from the X-axis direction.
  • the photoelectric conversion element 105 is, for example, a region (region 6 indicated by a broken line) containing germanium (Ge), and its position in the Z-axis direction is the silicon substrate 1 It is near the center of the
  • the present embodiment further discloses a structure in which optical members such as microlenses are laminated.
  • the optical member 47 is a convex microlens
  • the optical member 49 is a concave microlens
  • the optical member 51 is a light guide configured of members 51-1 and 51-2 having different refractive indices. a waveguide.
  • the material used for the micro lens etc. is selected in consideration of the wavelength of incident light, etc., and in particular, the wavelength dependency of the refractive index should be noted. Although the example which used all these three types of optical members is illustrated in a present Example, what is necessary is just to select either suitably based on an optical path calculation etc.
  • the incident light passing through the central portion of the microlens passes a position away from the semiconductor substrate surface by a distance d1 in the thickness (Z-axis) direction of the semiconductor substrate Micro lenses are arranged in the Here, d1 is about 1/2 of the thickness d of the photoelectric conversion element 105 in the Z-axis direction.
  • the sensitivity can be improved by efficiently condensing the incident light, which is similar to the effect of the microlens on the conventional photoelectric conversion element, but in the present structure, a special effect as described further below achieve the. That is, in the conventional photoelectric conversion element, incident light passes through the photoelectric conversion region 7 incident from the Z-axis direction upper part of the figure, toward the semiconductor substrate bottom direction. However, particularly in the case of long wavelength light having a wavelength of 700 nm or more, sensitivity has to be secured by expanding the thickness d of the silicon substrate and the depth of the photoelectric conversion region 7 when using a silicon substrate.
  • the manufacturing process requires the introduction of a technology different from a general CMOS manufacturing process and a special material such as a high resistance substrate, and an increase in driving voltage can not be avoided.
  • a technology different from a general CMOS manufacturing process and a special material such as a high resistance substrate
  • an increase in driving voltage can not be avoided.
  • the incident light travels from the left side to the right side in the figure so as to penetrate only the silicon germanium region 6 which is in the vicinity of the photoelectric conversion region and extends in the direction parallel to the XY plane. Therefore, efficient photoelectric conversion and long wavelength light sensitivity can be simultaneously achieved without further increasing the thickness d of the silicon substrate. Setting the length of the silicon germanium region 6 in the incident light direction, for example, in the range of 5 to 100 ⁇ m and manufacturing it can be solved by ordinary patterning (lithography).
  • FIG. 6B is a cross-sectional view of main parts of the photoelectric conversion element 106 according to the modification of the photoelectric conversion element 105 as viewed from the X-axis direction.
  • the position (CL) of the optical center in the Z-axis direction of an optical member such as a micro lens, that is, the distance d2 from the surface of the photoelectric conversion element is smaller than 1/2 of the thickness d of the photoelectric conversion element It is characterized in that 0 ⁇ d2 ⁇ d1).
  • the SiGe forming region 6 can be formed shallower in the Z-axis direction, the acceleration energy of Ge ions at the time of ion implantation can be lowered, and the temperature can be reduced or shortened in the heat treatment process.
  • the diameter of the microlens 47 is substantially equal to the thickness d of the photoelectric conversion element, but in order to further improve the sensitivity, as described later, the diameter of the microlens 47 is greater than the thickness d of the photoelectric conversion element You may also set larger.
  • FIG. 7A is an XY plan view of the photoelectric conversion element 107 as viewed in the Z-axis direction.
  • the photoelectric conversion region and the like is similar to such a photoelectric conversion element 100 or 101 described above, the side surface portion of the silicon substrate, the micro lenses 47, and 49 are formed.
  • one light receiving unit having no microlens is shown.
  • a light shielding film 59 is further laminated between the light receiving windows adjacent to each other on the side surface of the silicon substrate.
  • the light incident on the light receiving portion having a micro lens travels along the extension (Y axis) direction of the high concentration impurity region 7 constituting the photoelectric conversion region, so the risk of entering into the adjacent photoelectric conversion region It is low.
  • the light receiving portion not having a micro lens in the case of incident light penetrating at an incident angle different from the Y-axis direction, in particular, long wavelength light of 700 nm or more.
  • the risk of generating photocharges in a plurality of photoelectric conversion regions is increased, and crosstalk is increased.
  • the light charge generated in the vicinity of the photoelectric conversion region or depletion region can be prevented from leaking to the photoelectric conversion region adjacent the element isolation region 8-1.
  • an optical member for example, a convex microlens 47 and a concave microlens 49
  • the spread of incident light is suppressed or a diaphragm, and by forming a parallel light flux, light is incident on an adjacent photoelectric conversion region. Since the leakage of light itself is also suppressed, both sensitivity improvement of crosstalk and long wavelength light such as near infrared light are realized at the same time.
  • FIG. 7B is an XY plan view of the photoelectric conversion element 108 according to another embodiment as viewed in the Z-axis direction. Similar to FIG. 7A, the microlens 61 is formed on the side surface of the silicon substrate. Further, as in FIG. 7A, the light shielding film 59 is disposed between the silicon substrate and the micro lens 61. The microlenses 61 in the present embodiment are not hemispherical or dome-shaped, but are lenticular lenses (Kamaboko type).
  • FIG. 7C is a cross-sectional view of the microlens 61 as viewed in the X-axis direction.
  • the micro lens 61 is out lens shape of a single bar-shaped continuous achieves processing of the micro lenses, molded, the effect of mounting is extremely easy.
  • the mounting direction of the microlens 61 is as shown in FIG. And may be mounted in a direction parallel to the Z-axis direction different by 90 °.
  • FIG. 8 (a) shows the parallel cross sectional view of the photoelectric conversion element 109 to the Y-Z plane as viewed from the X-axis direction according to a seventh embodiment.
  • the structure of the photoelectric conversion region or the like is the same as that of the photoelectric conversion element 100 or 101 or the like described above, but the laminated optical member 47 is a convex microlens, and the optical member 52 is a convex microlens 47 And the silicon substrate 1 is a tapered optical waveguide.
  • the diameter d3 of the microlens 47 is larger than the thickness d of the silicon substrate, so that the sensitivity can be further improved.
  • the shape of the micro lens 47 may be a lenticular structure as described later. This is because it is not necessary to consider the arrangement pitch of the plurality of light receiving windows adjacent in the (X-axis) direction perpendicular to the drawing.
  • FIG. 8B is a cross-sectional view of main parts parallel to the YZ plane, as viewed from the X-axis direction, of the photoelectric conversion element 110 according to the eighth embodiment.
  • the structure of the photoelectric conversion region or the like is similar to that of the photoelectric conversion element 100 or 101 described above.
  • the optical member 53 is an optical waveguide, and a flexible optical fiber is integrally attached to the photoelectric conversion element 110. With this structure, it is possible to freely move the tip of the optical fiber close to or change the direction of the light signal to be detected. Therefore, it is difficult to be affected by external light, and it is possible to perform simultaneous measurement of optical signals of multiple channels with high accuracy using one photoelectric conversion element.
  • FIG. 8C shows a perspective view of the stacked photoelectric conversion element 120 according to the ninth embodiment.
  • the stacked photoelectric conversion element 120 has a structure in which three layers (110-1, 110-2, 110-3) of the photoelectric conversion element 110 in FIG. 8B are stacked, and the light receiving surface of each photoelectric conversion element is Band-like optical fiber cables 54-1, 54-2, and 54-3 in which the optical fibers 53 are linearly arranged are attached respectively.
  • the light receiving surface may be attached to two or more fiber optic cables to the side surface portion of the two or more photoelectric conversion elements.
  • the number of optical fibers 53 or the number of channels can be dramatically increased, and as will be described later, two-dimensional (area) even if it is a photoelectric conversion element composed of a one-dimensional (line-like) light receiving surface. It is possible to detect and process optical information at high speed.
  • FIGS. 9 (a), (b) and (c) A tenth embodiment will be described with reference to FIGS. 9 (a), (b) and (c).
  • 9 (a) is an XY plan view of the photoelectric conversion element 112
  • FIG. 9 (b) is a cross-sectional structural view of a portion DD 'in FIG. 9 (a), and FIG. 9 (c)
  • the photoelectric conversion element 112 has, for example, a region in which germanium (Ge) is doped in the inside of the silicon substrate 1 as in the above-described photoelectric conversion elements 100 to 102 (FIGS. 9 (b) and (c)).
  • the reflection film 32 is laminated on the top surface of the photoelectric conversion element 112. In FIG. Is removed so that the photoelectric conversion region 7 and the element isolation region 8-1 can be seen.
  • the reflection film 32 is, for example, a metal reflection containing aluminum (Al), copper (Cu), or gold (Au).
  • the same metal reflective films 10-1 and 10- are also provided inside the element isolation area 8-1 between the pixels and the element isolation area 8-2 between the pixel section and the pixel signal scanning and reading circuit section. 2 is embedded.
  • the element isolation region 8-2 is, for example, trench isolation, and a trench is formed in the silicon substrate 1, and the side wall is covered with a CVD silicon oxide film or the like to form a metal reflection film. 10-2 is embedded.
  • the element isolation region 8-1 is similarly trench isolation, and a trench is formed in the silicon substrate 1, the side wall thereof is covered with a CVD silicon oxide film, etc. It has a structure in which the reflective film 10-1 is embedded.
  • the light shielding film 31 made of a metal reflective film is also laminated on the bottom of the photoelectric conversion element 112.
  • the metal reflection films 10-1 and 10-2 are in contact with the metal reflection films (light shielding films) 32 and 31 at their end portions.
  • the area of the photoelectric conversion region required to obtain the same sensitivity that is, the extension distance of the high concentration impurity region 7 in the Y-axis direction can be shortened, so the capacity of the photodiode portion is reduced to The reading speed can be increased.
  • FIG. 10 is a cross-sectional view (a) of the main part of the photoelectric conversion element 113 according to the modification of the photoelectric conversion element 112 as viewed from the X-axis direction, and an XZ plan view when the light receiving surface is viewed from the Y-axis direction. it is.
  • metal reflection films 31, 32, 10-2 and 10-1 surround the photoelectric conversion region 7 composed of the high concentration impurity region 7. Enclosed by).
  • the metal reflection film 34 having the opening 36 on the light receiving surface is laminated.
  • the incident light 2 collected by the microlens 47 or the like passes through the opening 36 of the metal light shielding film 34 and enters the photoelectric conversion region of the photoelectric conversion element 113.
  • the shape of the opening 36 formed in the metal reflection film 34 can be optimized in accordance with the characteristics of the microlens 47.
  • the openings 36 may be rectangular but circular.
  • the incident light reflected by the metal reflection film 10-2 is reflected again by the surface of the metal reflection film 34, thereby repeatedly passing through the inside of the photoelectric conversion region and being attenuated.
  • the incident light reflected by the metal reflection film 10-2 is reflected again by the surface of the metal reflection film 34, thereby repeatedly passing through the inside of the photoelectric conversion region and being attenuated.
  • FIG. 11A is an XY plan view of the photoelectric conversion element 114.
  • the metal reflection film 10-2 in the element isolation region between the pixel portion and the pixel signal scanning and reading circuit portion is parallel on the XY plane so as to face the light receiving surface. (FIG. 9 (a), (b)), but in the present embodiment, as shown in FIG.
  • the metal reflection film 10-2 is replaced with an XY plane view relative to the light receiving surface Also, it is characterized in that two kinds of metal reflective films 10-3 and 10-4 which are angled so as to be non-parallel to each other are provided.
  • the metal reflective films 10-3 and 10-4 have angles of 135 degrees and 45 degrees with respect to the X axis, respectively.
  • the incident light 2 is reflected by the metal reflection film (10-3, 10-4) in the element separation region between the pixel unit and the pixel signal scanning and reading circuit unit, and is again transmitted to the outside from the opening 36
  • the sensitivity is further improved because the incident light component to be returned can be reduced.
  • FIG. 11 (b) is an XY plan view of the photoelectric conversion element 115. Mainly, parts different from the photoelectric conversion element 112 or 113 will be described.
  • the microlens 47 is stacked on the photoelectric conversion element 115, and incident light having passed through the microlens 47 is incident on the photoelectric conversion region 7-1.
  • Reference numerals 18-1, 18-2, and 18-3 denote peripheral circuit blocks.
  • the metal reflective films 10-1 in the element isolation region between the pixels are arranged parallel to the Y-axis direction on the XY plane view so as to face each other (see FIG. 9 (a) and 9 (c), in the present embodiment, as shown in FIG.
  • the metal reflection film 10-1 is changed to the metal reflection film 10-1 and has an angle so as to be nonparallel to each other on the XY plane view.
  • the two metal reflection films 10-5 and 10-6 are provided, and as the incident light travels into the photoelectric conversion area 7-1, the width of the photoelectric conversion area is narrowed on the XY plane, and the width It has a funnel-like shape connected to the narrow photoelectric conversion region 7-2.
  • the peripheral circuit blocks 18-1 and 18-2 can be arranged between the photoelectric conversion regions, the photoelectric conversion element can be miniaturized.
  • FIGS. 12 (a) and 12 (b) are respectively a cross-sectional view of the main part of the photoelectric conversion element 116 according to the thirteenth embodiment, and a transmittance spectrum of the wavelength filter 40.
  • the photoelectric conversion element 116 has, for example, a region 6 in which germanium (Ge) is doped in the inside of the silicon substrate 1 as in the above-described photoelectric conversion elements 100 to 102 and the like (broken line in FIG. area surrounded by). in the present embodiment also includes parallel wavelength filter 40 is formed monolithically on the light receiving surface.
  • the wavelength filter 40, reflective layer 44 formed on the light incident surface, and the reflective film 44 The reflection film 46 formed in the above is disposed in parallel, and the medium portion 42 (width L3) is sandwiched between the two reflection films 44 and 46. In this way, multiple interference of the opposing reflection surface is achieved. By using this, it is possible to obtain transmission light (2-1) having a periodic transmission peak and a narrow half width, in other words, to constitute a band pass filter for passing a specific wavelength range.
  • the reflectance is 50% or more and less than 100. When the reflectance is high, the peak spectrum of the transmittance T (%) becomes sharp, but the half width becomes narrow. The sensitivity of the photoelectric conversion element 116 also tends to decrease.
  • the medium portion 42 is preferably a silicon substrate 1 or a silicon oxide film (SiO 2). This is because the absorption coefficient to light is small, and because it is a material widely used in the silicon semiconductor manufacturing process, as described later, the type of medium, the distance L3 between the two reflecting films, and the reflecting film 44,
  • the spectral shape of the spectral transmittance of the wavelength filter 40 can be changed by the reflectance of 46 or the like.
  • FIG. 12B is an example of a spectrum diagram of the transmittance of the wavelength filter 40 when the medium is silicon, the distance L3 is 0.001 mm, and the reflectances of the reflective films 44 and 46 are 70%.
  • a high-speed, high-accuracy distance measuring apparatus of a time-of-flight (TOF) system combined with a light emitting diode light source becomes possible.
  • TOF time-of-flight
  • FIG. 6B by using a light source unit, such as a light emitting diode, which emits light having a wavelength ⁇ 1 (805 nm) or a wavelength equivalent to the wavelength ⁇ 2 (910 nm) where the transmittance of the filter 40 is high.
  • FIG. 12C is an example of a distance measuring device 150 including a photoelectric conversion element 116 and a light source unit 63 that emits light of wavelength ⁇ .
  • the distance to the object to be measured 160 can be measured by detecting the phase difference between the emitted light 2 e and the reflected light 2 r which differ depending on the distance to the object to be measured 160 by the photoelectric conversion element 116.
  • the photoelectric conversion element 116 has a wavelength filter, the influence of background light such as sunlight can be significantly reduced, so that the distance measurement accuracy can be improved.
  • the wavelength ⁇ of the emitted light is selected, for example, from the near infrared light region of 800 to 1000 nanometers (nm) where the solar light spectrum intensity decreases.
  • FIG. 13A is a schematic plan view of an optical measurement apparatus 200 in which the photoelectric conversion element 110 and the optical system are combined, which is an optical measurement apparatus according to the fourteenth embodiment.
  • an optical measurement apparatus On the light receiving surface of the photoelectric conversion element 110, two systems of optical fiber cables 54 in which a plurality of optical fibers 53 described later are bundled in multiple channels are mounted. The other end of the optical fiber cable 54 is connected to the optical fiber receiving surface 55.
  • the optical fiber light receiving surface 55 does not necessarily have to be aligned on a straight line like the photoelectric conversion element 110, and may be, for example, a m ⁇ n channel (m, n is an integer of 2 or more) two dimensional light receiving surface can.
  • FIG. 13B is a modified example of the photoelectric conversion element 110, and is a structural diagram of the photoelectric conversion element 111 suitable for use as the photoelectric conversion element in FIG. 13A.
  • the photoelectric conversion element 110 the light receiving surface is formed only on one side portion of the rectangular silicon substrate, but in the photoelectric conversion element 111, the light receiving surface is formed on two side portions of the rectangular silicon substrate. Therefore, the charge readout circuit section is also provided in two systems (9-L, 9-R) and connected to the peripheral circuit block 19 including the other circuits. With this structure, it is possible to prevent the shape of the photoelectric conversion element from becoming extremely elongated even when the number of optical fibers 53 is increased, and to connect the optical fibers 53 separately to the left and right.
  • FIG. 13 (a) detects signals from a plurality of light receiving surfaces 55 (such as FIG. 13 (a)) at remote locations, and shares the same signal processing circuit in the peripheral circuit block 19.
  • image signal processing such as correlation calculation between a plurality of light receiving surfaces (55) can be performed at high speed and with high accuracy.
  • the three or four side surfaces of the square silicon substrate may be used as the light receiving surface for the optical fiber 53.
  • the light receiving surface 55-1 is a quadrangle, in which a large number of optical fibers (53-1) are bundled and stored.
  • a circle 58-1 indicated by a broken line is an imaging surface by the focusing optical system 57.
  • the light receiving surface 55-2 in FIG. 13D is circular, and a large number of optical fibers (53-2) are bundled and stored therein.
  • a circle 58-2 indicated by a broken line is an imaging surface by the focusing optical system 57.
  • both the light receiving surface 55-2 and the imaging surface 58-2 are circular and their diameters are substantially equal, it is possible to miniaturize the light receiving surface 55 when the same resolution, ie, the number of optical fibers is the same. It is particularly suitable for insertion into the body, etc.
  • the sensitivity of a photoelectric conversion element having a silicon substrate side surface as a light receiving surface in particular, high sensitivity to high energy rays such as X-rays and long wavelength light such as near infrared light, disturbance light and noise
  • high energy rays such as X-rays
  • long wavelength light such as near infrared light, disturbance light and noise
  • SYMBOLS 1 Semiconductor substrate, 2 ... Incident light to a light-receiving part, 2-1 ... Light which passed the wavelength filter, 2s ... Sunlight, 2e ... Outgoing from a light source part (63) Reflected light from the object to be measured (160), 3: insulating film layer on the side of the semiconductor substrate, 4: input / output terminal, 5: light receiving window, 6: SiGe Regions 7, 7-1, 7-2, high concentration impurity regions in the photoelectric conversion region 8, 8-1, 8-2, element isolation regions 9, charge readout circuit portion 10 10-1,10-2,10-3,10-4,10-5,10-6 ... metal element isolation region embedded, 11 ... timing pulse generator circuit, 13 ...
  • Digital signal processing Circuit 15 AD conversion circuit 17 Interface circuit 18-1, 18-2, 18-3 Peripheral Path block 19 Peripheral circuit portion 21 High concentration P-type semiconductor region on the side surface of semiconductor substrate 23 High concentration P-type semiconductor region on the surface of photoelectric conversion region 25 Rear surface of semiconductor substrate High-concentration impurity region, 27: insulating film layer on the surface of the semiconductor substrate, 31: light shielding film on the back surface of the semiconductor substrate, 32: light shielding film on the upper surface of the semiconductor substrate, 33: light receiving surface Concentration impurity region formed toward the inside of the silicon substrate from the bottom, 34: a light shielding film having an opening at the side of the semiconductor substrate, 35: reset terminal, 36: opening, 37: floating Diffusion layer 39: Readout gate 40: Wavelength filter portion 41: Source follower amplifier 42: Medium portion sandwiched between two reflective films 44 and 46: 43: Reset Drain, 44 ...
  • Reflective film 45 Collimator 46: Reflective film formed in parallel to the reflective film 44 47: Convex lens 49: Concave lens 51: Optical waveguide 51-1, 51 -2 ... each refractive index different from the optical waveguide member, 52 an example of ... other optical waveguide, 53,53-1,53-2 ...
  • optical fiber 54,54-1,54-2,54 -3: Optical fiber cable, 55, 55-1, 55-2: Optical fiber cable receiving surface, 57: Focusing optical system, 58-1, 58-2: Projection by focusing optical system Image area 59: light shielding film covering other than the light receiving window of the side surface of the semiconductor substrate 61: lenticular lens 63: light source unit 100, 101, 102, 103, 104, 105, 106, 107 , 108, 109, 110, 1 1, 112, 113, 114, 115, 116: photoelectric conversion device according to the present invention, 120: stacked photoelectric conversion device according to the present invention, 150: distance measuring device, 160: measurement object Object 200: Optical measuring device

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