WO2018214215A1 - Oled器件的封装组件及封装方法、显示装置 - Google Patents
Oled器件的封装组件及封装方法、显示装置 Download PDFInfo
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- WO2018214215A1 WO2018214215A1 PCT/CN2017/089704 CN2017089704W WO2018214215A1 WO 2018214215 A1 WO2018214215 A1 WO 2018214215A1 CN 2017089704 W CN2017089704 W CN 2017089704W WO 2018214215 A1 WO2018214215 A1 WO 2018214215A1
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- barrier layer
- pattern region
- oled device
- buffer layer
- layer
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8794—Arrangements for heating and cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/87—Arrangements for heating or cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
Definitions
- the present invention relates to the field of display, and in particular to a package assembly, a package method, and a display device for an OLED (Organic Light Emitting Diode) device.
- OLED Organic Light Emitting Diode
- the traditional use of the liquid crystal display is that it does not need to use a backlight, by making an organic film on the substrate, the organic film is wrapped between the cathode and the anode metal, applying voltage to the two electrodes Then the organic film will glow. Since the organic material of the organic film is very sensitive to water vapor and oxygen, the water/oxygen permeation will greatly reduce the life of the OLED device. Therefore, in order to meet the market demand for its service life and stability, the industry has very strict requirements for the packaging effect of the OLED device. high.
- the OLED device is generally packaged in a thin film package manner. As shown in FIG. 1, a package film 12 covering the OLED device 11 is formed on the OLED device 11, and the package film 12 is alternately deposited by the barrier layer 121 and the buffer layer 122. .
- the barrier layer 121 serves as an effective barrier layer for water/oxygen, and its main component is inorganic, and defects such as pinholes, particles, and the like may occur during preparation.
- the main component of the buffer layer 122 is an organic substance that functions to cover the defects of the barrier layer 121 to achieve planarization.
- the prior art in order to improve the material utilization rate and save costs, the prior art generally adopts an inkjet printing (IJP) method to form the buffer layer 122. How to prevent the droplet overflow of the buffer layer 122 from forming is very critical.
- the thinning design trend of the OLED device 11 makes the wiring dense, and how to improve the rapid heat dissipation capability of the OLED device 11 is also very important.
- the present invention provides a package assembly and a packaging method and a display device for an OLED device, which can prevent the package film from being peeled off due to bending of the LED device, and prevent droplet overflow when the package film is formed by the inkjet printing method. And help to improve the rapid dispersion of OLED devices Thermal capacity.
- a first pattern region and a second pattern region are disposed on a side of the first barrier layer away from the OLED device, and the first pattern region and the second pattern region are staggered along a predetermined direction, the first barrier layer
- the thickness of the first pattern region is less than the thickness of the second pattern region
- a display device includes a package assembly, the package assembly comprising:
- a first pattern region and a second pattern region are disposed on a side of the first barrier layer away from the OLED device, and the first pattern region and the second pattern region are staggered along a predetermined direction, the first barrier layer
- the thickness of the first pattern region is less than the thickness of the second pattern region
- the first barrier layer is disposed on the side away from the OLED device with a first pattern region and a second pattern region, and the first pattern region and the second pattern region are staggered along a predetermined direction, the first blocking
- the thickness of the layer in the first pattern region is less than the thickness of the layer in the second pattern region;
- a buffer layer is coated on the first barrier layer, and the buffer layer is doped with heat conductive particles.
- the first barrier layer of the present invention has a predetermined pattern such that the thickness of the first barrier layer in the first pattern region is smaller than the thickness of the second pattern region, and the stress of the first barrier layer when the OLED device is bent is reduced. Therefore, it is possible to prevent the package film from peeling off due to bending of the OLED device; and, the first pattern region can accommodate droplets forming a buffer layer by inkjet printing technology to prevent droplet overflow; and, in addition, the heat conductive particles in the first barrier layer Helps improve the fast heat dissipation of OLED devices.
- FIG. 1 is a schematic cross-sectional view showing a package assembly of an OLED device in the prior art
- FIG. 2 is a cross-sectional view showing a display device according to an embodiment of the present invention.
- Figure 3 is a plan view showing the structure of the buffer layer and the first barrier layer shown in Figure 2;
- Figure 4 is a plan view showing the structure of a mask for producing the first barrier layer shown in Figure 3;
- FIG. 5 is a schematic flow chart of a method of packaging an OLED device according to an embodiment of the invention.
- FIG. 2 is a display device according to an embodiment of the present invention.
- the display device includes an OLED device 20 and a package assembly of the OLED device 20.
- the package assembly may include a substrate substrate 21, a first barrier layer 22, and a buffer layer 23.
- the OLED device 20 is carried on a substrate substrate 21.
- the substrate substrate 21 includes, but is not limited to, a transparent glass substrate or a transparent plastic substrate.
- the substrate substrate 21 may be a bendable transparent plastic substrate.
- the first barrier layer 22 covers the OLED device 20.
- the first barrier layer 22 has a predetermined pattern on a side away from the OLED device 20.
- the first barrier layer 22 may include a plurality of strips alternately arranged in a direction parallel to the substrate substrate 21 (horizontal direction). a strip-shaped region, each strip-shaped region including a first pattern region 221 and a second pattern region 222 which are alternately connected in the vertical direction, the thickness of the first barrier layer 22 in the first pattern region 221 being smaller than that in the second pattern region 222 thickness.
- the area between adjacent two strip regions may be regarded as the third pattern region 223 of the first barrier layer 22, and the third pattern region 223 may expose the surface of the OLED device 20.
- the present invention can form the first barrier layer 22 by a PECVD (Plasma Enhanced Chemical Vapor Deposition) method. Specifically, first, the substrate substrate 21 carrying the OLED device 20 is placed in a sealed cavity, and a mask 40 is placed on the OLED device 20. As shown in FIG. 4, the mask 40 includes hollowing out.
- PECVD Plasma Enhanced Chemical Vapor Deposition
- the area 41 and the non-hollow area 42 include a first sub-area 411 and a second sub-area 412 that are electrically connected to each other, the area of the first sub-area 411 is smaller than the area of the second sub-area 412, and the first sub-area 411 And the second sub-region 412 may be both rectangular, the first sub-region 411 and the first pattern region 221 have the same shape in a plan view, and the second sub-region 412 and the second pattern region 222 have the same shape in a plan view.
- a reaction gas such as a mixed gas containing SiH 4 (silane), NH 3 (ammonia gas), and N 2 (nitrogen) is introduced into the sealed cavity, and then the reaction gas is subjected to radio frequency discharge, so that the reaction gas reacts to generate SiN. x (silicon nitride), SiN x by the hollow area 40 of mask 41 is deposited on the OLED device 20, such that the first barrier layer 22 is formed.
- a reaction gas such as a mixed gas containing SiH 4 (silane), NH 3 (ammonia gas), and N 2 (nitrogen) is introduced into the sealed cavity, and then the reaction gas is subjected to radio frequency discharge, so that the reaction gas reacts to generate SiN. x (silicon nitride), SiN x by the hollow area 40 of mask 41 is deposited on the OLED device 20, such that the first barrier layer 22 is formed.
- the present invention can horizontally move the mask sheet 40 to a predetermined region after one PEVCD process, and perform the PEVCD process again.
- the distance and the number of movements are determined according to the pattern and number of the first pattern regions 221 and the second pattern regions 222 designed by the first barrier layer 22, thereby forming the first barrier layer 22 having a predetermined pattern.
- the present invention can also adopt any one of an ALD (Atomic Layer Deposition) method, a PVD (Physical Vapor Deposition) method, and a CVD (Chemical Vapor Deposition) method.
- the mask 40 forms a first barrier layer 22 having a predetermined pattern.
- the material of the first barrier layer 22 may be other inorganic substances such as nitride of aluminum, oxide of aluminum, oxynitride of aluminum, oxide of silicon, and oxynitride of silicon.
- the buffer layer 23 is coated on the first barrier layer 22, and the buffer layer 23 can completely cover the first pattern region 221, the second pattern region 222, and the third pattern region 223, that is, the buffer layer 23 is A full face structure of the first barrier layer 22 is completely covered.
- the buffer layer 23 may cover only the first pattern region 221 and the third pattern region 223.
- the buffer layer 23 is doped with heat conductive particles 231.
- the material of the buffer layer 23 may be an organic material such as an epoxy resin, a silicon-based polymer, or PMMA (polymethyl methacrylate).
- the heat conductive particles 231 are made of a material having a large thermal conductivity, such as graphene, carbon nanotubes, aluminum oxide, magnesium oxide, zinc oxide, aluminum nitride, boron nitride, and, for example, silver, copper, gold, aluminum, and alloys thereof. .
- the present invention can form the buffer layer 23 without using a mask, for example, using any one of an ODF (One Drop Filling) method, an inkjet printing method, and a nozzle printing method to form the buffer layer 23, To save the design and production cost of the mask, thereby reducing the production and manufacturing costs of the entire package.
- ODF One Drop Filling
- the nano-sized alumina particles are first hydrophilically modified, and then the alumina particles are uniformly dispersed into the epoxy resin by a high-speed shear dispersing emulsifier, wherein the alumina particles are
- the amount of doping may be 3 to 50% by weight (% by weight), and the formation is slow
- the viscosity of the scouring solution is less than 0.5 Pa ⁇ s (Pascals per second), and finally curing is carried out at a temperature of 80 to 100 ° C to form a buffer layer 23 .
- the present invention can also form the buffer layer 23 by UV (Ultraviolet, ultraviolet irradiation or radiation) curing.
- the first barrier layer 22 is an effective barrier layer for water/oxygen
- the buffer layer 23 is used to cover the first barrier layer 22 to achieve planarization
- the buffer layer 23 and the first barrier layer 22 can be regarded as the OLED device 20 Packaging film.
- the present invention designs that the thickness of the first barrier layer 22 in the first pattern region 221 is smaller than the thickness of the second pattern region 222, which is equivalent to the side of the first barrier layer 22 away from the OLED device 20. In the patterning process, when the OLED device 20 is bent, the edge portions of the first pattern region 221 and the second pattern region 222 are not pressed, and the stress of the first barrier layer 22 when the OLED device 20 is bent is reduced.
- the first pattern region 221 can accommodate droplets when the buffer layer 23 is formed by a method such as inkjet printing to prevent the droplets from overflowing.
- the thermally conductive particles 231 in the buffer layer 23 help to improve the rapid heat dissipation capability of the OLED device 20.
- the addition of the thermally conductive particles 231 in the buffer layer 23 can extend the path of water/oxygen entering the OLED device 20, further improving the OLED device 20. Water/oxygen resistance.
- the present invention can produce the heat conductive particles 231 by using a heat conductive material having a high light transmittance to ensure the light output performance of the OLED device 20.
- the package assembly of an embodiment of the present invention may further include a second barrier layer 24 covering the buffer layer 23 and the first barrier layer 22 .
- the second barrier layer 24 may be made of the same material as the first barrier layer 22.
- the present invention can form the second barrier layer 24 without a mask, for example, using the ODF method, the inkjet printing method, and the nozzle printing method to form the second barrier layer 24 to save cost.
- the side of the second barrier layer 24 away from the buffer layer 23 may be a smooth plane.
- a protective film or a touch sensor having a touch sensor function is attached to a side of the second barrier layer 24 away from the buffer layer 23, the present invention does not appear at the attachment of the smooth plane to the protective film or the touch film. Tiny gullies, thereby avoiding the occurrence of bubbles when the OLED device 20 is displayed.
- FIG. 5 illustrates a method of packaging an OLED device according to an embodiment of the invention.
- the encapsulation method may include the following steps S51 to S54.
- the substrate substrate includes, but is not limited to, a transparent glass substrate or a transparent plastic substrate.
- the substrate substrate can be a flexible plastic substrate that can be bent.
- the OLED device is carried on a substrate substrate.
- S53 covering the first barrier layer on the OLED device, the first barrier layer is disposed on the side away from the OLED device, and the first pattern region and the second pattern region are disposed in a predetermined direction.
- a barrier layer has a thickness in the first pattern region that is less than a thickness in the second pattern region.
- the first barrier layer has a predetermined pattern away from a side of the OLED device.
- the first barrier layer may include a plurality of strip-shaped regions alternately arranged in a direction parallel to the substrate substrate (horizontal direction), each strip region The first pattern region and the second pattern region are alternately connected in the vertical direction, and the thickness of the first barrier layer in the first pattern region is smaller than the thickness in the second pattern region.
- the area between adjacent two strip regions can be regarded as the third pattern region of the first barrier layer, and the third pattern region can expose the surface of the OLED device.
- the present invention can form a first barrier layer by a PECVD method. Specifically, first, the substrate substrate carrying the OLED device is placed in a sealed cavity, and a mask plate is disposed on the OLED device, the mask plate includes a hollowed out area and a non-hollowed area, and the hollowed out area includes mutual conduction. a first sub-area and a second sub-area, the area of the first sub-area is smaller than the area of the second sub-area, and the first sub-area and the second sub-area may both be rectangular, the first sub-area and the first pattern area
- the shape is the same in plan view, and the second sub-area and the second pattern area have the same shape in plan view.
- a reaction gas for example, a mixed gas containing SiH 4 , NH 3 and N 2 , is introduced into the sealed cavity, and then the reaction gas is subjected to radio frequency discharge, so that the reaction gas reacts to generate SiN x , and the SiN x passes through the mask.
- the voided region is deposited on the OLED device to form a first barrier layer.
- the present invention can horizontally move the mask sheets to a predetermined region after one PEVCD process, and perform the PEVCD process again.
- the distance and the number of movements are determined according to the pattern and number of the first pattern area and the second pattern area designed by the first barrier layer, thereby forming a first barrier layer having a predetermined pattern.
- the present invention may also employ any one of an ALD method, a PVD method, and a CVD method, and combine with the mask to form a first barrier layer having a predetermined pattern.
- the material of the first barrier layer may be other inorganic substances such as nitride of aluminum, oxide of aluminum, oxynitride of aluminum, oxide of silicon, and oxynitride of silicon.
- S54 coating a buffer layer on the first barrier layer, wherein the buffer layer is doped with heat conductive particles.
- the buffer layer can completely cover the first pattern area, the second pattern area and the third pattern area, that is, buffer
- the layer is a one-sided structure that completely covers the first barrier layer.
- the buffer layer may cover only the first pattern region and the third pattern region.
- the buffer layer is doped with heat conductive particles.
- the present invention can produce thermally conductive particles by using a heat conductive material having a high light transmittance to ensure the light output performance of the OLED device.
- the material of the buffer layer can be organic, such as epoxy resin, silicon based polymer, PMMA.
- the thermally conductive particles are made of a material having a large thermal conductivity, such as graphene, carbon nanotubes, alumina, magnesia, zinc oxide, aluminum nitride, boron nitride, and also, for example, silver, copper, gold, aluminum, and alloys thereof.
- the present invention can form the buffer layer without using a mask, for example, using any one of an ODF method, an inkjet printing method, and a nozzle printing method to form a buffer layer, thereby saving the design and production cost of the mask, thereby reducing the entire Production and manufacturing costs of package components.
- the nano-sized alumina particles are first hydrophilically modified, and then the alumina particles are uniformly dispersed into the epoxy resin by a high-speed shear dispersing emulsifier, wherein the alumina particles are
- the doping amount may be 3 to 50% by weight
- the viscosity of the formed buffer solution is less than 0.5 Pa ⁇ s
- curing is carried out at a temperature of 80 to 100 ° C to form a buffer layer.
- the present invention can also form a buffer layer by UV curing.
- the present invention may further form a second barrier layer covering the buffer layer and the first barrier layer after the step S54, that is, the packaging method may further include the step S55:
- the side of the second barrier layer away from the buffer layer is a smooth plane.
- the second barrier layer may be made of the same material as the first barrier layer.
- the present invention can form the second barrier layer without using a mask, for example, forming a second barrier layer by using any one of an ODF method, an inkjet printing method, and a nozzle printing method to save cost.
- the above-described packaging method of the OLED device can be used to produce a package assembly having the structure shown in FIG. 2, and thus has the same advantageous effects.
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Abstract
Description
Claims (13)
- 一种OLED器件的封装组件,其中,所述封装组件包括:衬底基材,用于承载OLED器件;覆盖所述OLED器件的第一阻挡层,所述第一阻挡层远离所述OLED器件的一侧设置有第一图案区和第二图案区,所述第一图案区和第二图案区沿预定方向交错设置,所述第一阻挡层在第一图案区的厚度小于其在所述第二图案区的厚度;涂覆于所述第一阻挡层上的缓冲层,所述缓冲层中掺杂有导热粒子。
- 根据权利要求1所述的封装组件,其中,所述封装组件还包括第二阻挡层,用于覆盖所述缓冲层和所述第一阻挡层。
- 根据权利要求2所述的封装组件,其中,所述第二阻挡层远离所述缓冲层的一面为光滑平面。
- 根据权利要求1所述的封装组件,其中,所述导热粒子的制造材料包括可透光的导热材料。
- 一种显示装置,其中,所述显示装置包括封装组件,所述封装组件包括:衬底基材,用于承载OLED器件;覆盖所述OLED器件的第一阻挡层,所述第一阻挡层远离所述OLED器件的一侧设置有第一图案区和第二图案区,所述第一图案区和第二图案区沿预定方向交错设置,所述第一阻挡层在第一图案区的厚度小于其在所述第二图案区的厚度;涂覆于所述第一阻挡层上的缓冲层,所述缓冲层中掺杂有导热粒子。
- 根据权利要求5所述的显示装置,其中,所述封装组件还包括第二阻挡层,用于覆盖所述缓冲层和所述第一阻挡层。
- 根据权利要求6所述的显示装置,其中,所述第二阻挡层远离所述缓冲层的一面为光滑平面。
- 根据权利要求5所述的显示装置,其中,所述导热粒子的制造材料包括可透光的导热材料。
- 一种OLED器件的封装方法,其中,所述封装方法包括:提供一衬底基材;将OLED器件承载于所述衬底基材上;在所述OLED器件上覆盖第一阻挡层,所述第一阻挡层远离所述OLED器件的一侧设置有第一图案区和第二图案区,所述第一图案区和第二图案区沿预定方向交错设置,所述第一阻挡层在第一图案区的厚度小于其在所述第二图案区的厚度;在所述第一阻挡层上涂覆缓冲层,所述缓冲层中掺杂有导热粒子。
- 根据权利要求9所述的封装方法,其中,在所述第一阻挡层上涂覆缓冲层之后,所述封装方法还包括:形成覆盖所述缓冲层和所述第一阻挡层的第二阻挡层。
- 根据权利要求10所述的封装方法,其中,所述第二阻挡层远离所述缓冲层的一面为光滑平面。
- 根据权利要求9所述的封装方法,其中,采用可透光的导热材料制得所述导热粒子。
- 根据权利要求9所述的封装方法,其中,通过基于掩膜板的图案化工艺形成所述第一阻挡层。
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CN109065748B (zh) * | 2018-07-20 | 2020-02-14 | 云谷(固安)科技有限公司 | 显示面板及设有其的显示装置 |
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CN110265574A (zh) * | 2019-06-25 | 2019-09-20 | 京东方科技集团股份有限公司 | 薄膜封装结构及其制作方法、元器件、显示面板和装置 |
CN110911582A (zh) * | 2019-11-28 | 2020-03-24 | 云谷(固安)科技有限公司 | 显示面板及显示装置 |
CN111129030A (zh) * | 2019-12-17 | 2020-05-08 | 武汉华星光电半导体显示技术有限公司 | 背板及显示面板 |
CN112467016A (zh) * | 2020-11-16 | 2021-03-09 | 福建华佳彩有限公司 | 一种Mini LED的柔性封装散热结构及其制造方法 |
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