CN107565059A - Qled器件的封装方法及封装结构 - Google Patents
Qled器件的封装方法及封装结构 Download PDFInfo
- Publication number
- CN107565059A CN107565059A CN201710931768.4A CN201710931768A CN107565059A CN 107565059 A CN107565059 A CN 107565059A CN 201710931768 A CN201710931768 A CN 201710931768A CN 107565059 A CN107565059 A CN 107565059A
- Authority
- CN
- China
- Prior art keywords
- layer
- qled devices
- thin
- organic
- buffer layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000012856 packing Methods 0.000 title claims abstract description 21
- 230000004888 barrier function Effects 0.000 claims abstract description 55
- 239000010409 thin film Substances 0.000 claims abstract description 52
- 238000005538 encapsulation Methods 0.000 claims abstract description 49
- 239000000463 material Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical class COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 8
- 239000005416 organic matter Substances 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005266 casting Methods 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 3
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 150000001336 alkenes Chemical class 0.000 claims 2
- 229910002804 graphite Inorganic materials 0.000 claims 2
- 239000010439 graphite Substances 0.000 claims 2
- 238000007639 printing Methods 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052760 oxygen Inorganic materials 0.000 abstract description 12
- 239000001301 oxygen Substances 0.000 abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 11
- 238000007789 sealing Methods 0.000 abstract description 9
- 238000000605 extraction Methods 0.000 abstract description 6
- 239000002096 quantum dot Substances 0.000 description 8
- 229910021389 graphene Inorganic materials 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/87—Arrangements for heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
本发明提供一种QLED器件的封装方法及封装结构。该QLED器件的封装方法通过在QLED器件上形成多层无机阻挡层与至少一层有机缓冲层交替层叠设置的薄膜封装层,对QLED器件实现密封以阻挡水氧等对器件的侵害,并且有机缓冲层中还掺杂了导热材料,能够将QLED器件产生的热量及时地通过薄膜封装层传递出来,从而提高薄膜封装层的散热性,进而提高QLED器件的出光效率和使用寿命。
Description
技术领域
本发明涉及显示装置封装领域,尤其涉及一种QLED器件的封装方法及封装结构。
背景技术
有机发光二极管显示装置(Organic Light Emitting Display,OLED)具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽、可实现柔性显示与大面积全色显示等诸多优点,被业界公认为是最有发展潜力的显示装置。
OLED器件的发光原理为半导体材料和有机发光材料在电场驱动下,通过载流子注入和复合导致发光。具体地,OLED器件通常采用氧化铟锡(ITO)电极和金属电极分别作为器件的阳极和阴极,在一定电压驱动下,电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层,电子和空穴分别经过电子传输层和空穴传输层迁移到发光层,并在发光层中相遇,形成激子并使发光分子激发,后者经过辐射弛豫而发出可见光。
量子点(quantum dot,QD)是半径小于或者接近波尔激子半径的纳米晶颗粒,其尺寸粒径一般介于1-20nm之间。量子点具有量子限域效应,受激发后可以发射荧光。而且量子点具有独特的发光特性,例如激发峰宽、发射峰窄、发光光谱可调等性质,使得其在光电发光领域具有广阔的应用前景。量子点发光二极管(quantum dot light emitting diode,QLED)就是以量子点作为发光层的电致发光器件,在不同的导电材料之间引入量子点发光层从而得到所需要波长的光。经过二十多年来的发展,由于具有尺寸可调、波长可调、发光光谱半峰宽极窄、色域面积大、电致发光效率极高、可溶液制程降低损耗等优点,量子点发光二极管已成为下一代显示技术的极具潜力的竞争者。
然而QLED器件对水氧非常敏感,极易受到周围环境的水氧影响而造成器件失效,故需要极高密闭性的封装结构,然而高密闭的封装结构又会导致器件散热困难,从而严重制约了其效率和寿命表现。因而如何保证器件同时兼备密封性和散热性成为封装结构亟待解决的问题。
发明内容
本发明的目的在于提供一种QLED器件的封装方法,能够在保证密封性和出光效率的同时,将QLED器件产生的热量及时有效地导出,从而提高器件的稳定性,延长QLED器件的使用寿命。
本发明的另一目的在于提供一种QLED器件的封装结构,对水氧具有较高阻隔密封性,且QLED器件产生的热量能够及时有效地导出,从而提高器件的稳定性,延长QLED器件的使用寿命。
为实现上述目的,本发明首先提供一种QLED器件的封装方法,包括如下步骤:
步骤1,提供一衬底基板,在所述衬底基板上形成QLED器件;
步骤2,在所述QLED器件和衬底基板上形成薄膜封装层;
所述薄膜封装层包括交替层叠设置的多层无机阻挡层和至少一层有机缓冲层;
所述有机缓冲层中掺杂有导热材料。
所述步骤2形成的薄膜封装层的具体方法为:在所述QLED器件和衬底基板上形成一层无机阻挡层,在所述无机阻挡层形成一层有机缓冲层,重复多次上述制作步骤,形成多层无机阻挡层和至少一层有机缓冲层交替层叠设置的薄膜封装层。
所述导热材料为氧化石墨烯;所述有机缓冲层中导热材料的质量分数小于或等于5%。
形成有机缓冲层的具体方法为:在所述无机阻挡层上将导热材料、有机物及有机溶剂的混合物通过丝网印刷、旋涂、喷墨打印或流延成膜的方式形成有机膜层,并固化该有机膜层得到所述有机缓冲层;所述有机物为环氧树脂、硅基聚合物及聚甲基丙烯酸甲酯中的一种或多种的组合,所述有机溶剂为乙醇、甲苯、苯酚、或苯甲醚。
所述有机缓冲层的厚度为500-2000nm。
本发明还提供一种QLED器件的封装结构,包括:
衬底基板;
设于所述衬底基板上的QLED器件;
设于所述衬底基板上并覆盖所述QLED器件的薄膜封装层;
所述薄膜封装层包括交替层叠设置的多层无机阻挡层和至少一层有机缓冲层;
所述有机缓冲层中掺杂有导热材料。
所述有机缓冲层的厚度为500-2000nm。
所述有机缓冲层中的有机物为环氧树脂、硅基聚合物及聚甲基丙烯酸甲酯中的一种或多种的组合。
所述导热材料为氧化石墨烯;所述有机缓冲层中导热材料的质量分数小于或等于5%。
所述薄膜封装层中靠近QLED器件的一层为无机阻挡层。
本发明的有益效果:本发明提供的QLED器件的封装方法,在QLED器件上形成多层无机阻挡层与至少一层有机缓冲层交替层叠设置的薄膜封装层,对QLED器件实现密封以阻挡水氧等对器件的侵害,并且有机缓冲层中还掺杂了导热材料,能够将QLED器件产生的热量及时地通过薄膜封装层传递出来,从而提高薄膜封装层的散热性,进而提高QLED器件的出光效率和使用寿命。本发明提供的QLED器件的封装结构,在QLED器件上形成多层无机阻挡层与至少一层有机缓冲层交替层叠设置的薄膜封装层,对QLED器件实现密封以阻挡水氧等对器件的侵害,并且有机缓冲层中还掺杂了导热材料,能够将QLED器件产生的热量及时地通过薄膜封装层传递出来,从而提高薄膜封装层的散热性,进而提高QLED器件的出光效率和使用寿命。
附图说明
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图中,
图1为本发明的QLED器件的封装方法的流程图;
图2为本发明的QLED器件的封装方法的步骤1的示意图;
图3至图6为本发明的QLED器件的封装方法的步骤2的示意图,且图5和图6为本发明的QLED器件的封装结构的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1至图5,本发明提供一种QLED器件的封装方法,包括如下步骤:
步骤1,如图2所示,提供一衬底基板10,在所述衬底基板10上形成QLED器件20。
具体地,所述衬底基板10为TFT基板,包括阵列排布的用于驱动QLED器件20发光的多个薄膜晶体管(未图示)。
步骤2,如图3至图6所示,在QLED器件20和衬底基板10上形成薄膜封装层50;所述薄膜封装层50包括交替层叠设置的多层无机阻挡层30和至少一层有机缓冲层40;所述有机缓冲层40中掺杂有导热材料。
具体地,所述步骤2形成薄膜封装层50的具体方法为:在所述QLED器件20和衬底基板10上形成一层无机阻挡层30,在所述无机阻挡层30形成一层有机缓冲层40,重复多次上述制作步骤,形成多层无机阻挡层30和至少一层有机缓冲层40交替层叠设置的薄膜封装层50。
具体地,所述薄膜封装层50中位于顶层的一层为无机阻挡层30,即所述无机阻挡层30的层数比有机缓冲层40的层数多一层。
具体地,所述无机阻挡层30的材料为硅的氧化物、硅的氮化物及铝的氧化物中的一种或多种的组合,如三氧化二铝(Al2O3)、氮化硅(SiNx),可以采用等离子体增强化学气相沉积法(PECVD)、原子层沉积法(ALD)或溅射镀膜法(sputtering)形成无机阻挡层30。所述无机阻挡层30的厚度为500-2000nm。
具体地,所述导热材料为氧化石墨烯。
具体地,形成有机缓冲层40的具体方法为:将导热材料和有机物溶于有机溶剂中形成混合物后,在无机阻挡层30上将该混合物通过丝网印刷、旋涂、喷墨打印或流延成膜的方式形成有机膜层,然后经UV光照射或加热的方式使有机膜层固化,得到有机缓冲层40。
具体地,所述有机缓冲层40的厚度为500-2000nm。
需要指出的是,当QLED发出的光需要从薄膜封装层一侧出射时,导热材料在有机缓冲层中的质量分数小于或等于5%,以保证封装结构的透光性。
具体地,所述有机物的材料为环氧树脂、硅基聚合物及聚甲基丙烯酸甲酯中的一种或多种的组合,所述有机溶剂可选择易挥发性有机溶剂,如乙醇、甲苯、苯酚、或苯甲醚。
需要说明的是,本发明的QLED器件的封装方法在QLED器件20上形成了包括交替层叠设置的多层无机阻挡层30和至少一层有机缓冲层40的薄膜封装层50,对QLED器件20实现密封以阻挡水氧等对器件的侵害,其中,无机阻挡层30为水氧的有效阻挡层,但是在制备无机阻挡层30过程中会产生一些针孔(Pinholes)或异物(Particle)缺陷,而有机缓冲层40的作用就是覆盖无机阻挡层30的缺陷,有机缓冲层40还可以释放无机阻挡层30之间的应力,实现平坦化,并且,有机缓冲层40中掺杂了具有较高的热导率的氧化石墨烯,能够将QLED器件20产生的热量及时地通过薄膜封装层50传递出来,从而提高薄膜封装层50的散热性,进而提高QLED器件20的出光效率和使用寿命。
上述QLED器件的封装方法中,可以根据实际情况或需要,形成如图5所示的无机阻挡层-有机缓冲层-无机阻挡层三层交替层叠设置的薄膜封装层50,也可以形成如图6所示的无机阻挡层-有机缓冲层-无机阻挡层-有机缓冲层-无机阻挡层五层交替层叠设置的薄膜封装层50’,以增强薄膜封装层的密封性,在此不做限制。
请参阅图5或图6,在上述的QLED器件的封装方法的基础上,本发明还提供一种QLED器件的封装结构,包括:
衬底基板10;
设于衬底基板10上的QLED器件20;
设于衬底基板10上并覆盖QLED器件20的薄膜封装层50;
所述薄膜封装层50包括交替层叠设置的多层无机阻挡层30和至少一层有机缓冲层40;所述有机缓冲层40中掺杂有导热材料。
具体地,所述薄膜封装层50中靠近QLED器件20的一层为无机阻挡层30。
具体地,所述薄膜封装层50中位于顶层的一层为无机阻挡层30,即所述无机阻挡层30的层数比有机缓冲层40的层数多一层。
具体地,所述导热材料为氧化石墨烯。
具体地,所述有机缓冲层40中的有机物为环氧树脂、硅基聚合物及聚甲基丙烯酸甲酯中的一种或多种的组合。
需要指出的是,当QLED器件20发出的光需要从薄膜封装层50一侧出射时,导热材料在有机缓冲层40中的质量分数小于或等于5%,以保证薄膜封装层50的透光性。
具体地,所述有机缓冲层40的厚度为500-2000nm。
具体地,所述无机阻挡层30为硅的氧化物、硅的氮化物及铝的氧化物中的一种或多种的组合,如三氧化二铝(Al2O3)或氮化硅(SiNx)。
具体地,所述无机阻挡层30的厚度为500-2000nm。
需要说明的是,本发明的QLED器件的封装结构在QLED器件20上形成了包括交替层叠设置的多层无机阻挡层30和至少一层有机缓冲层40的薄膜封装层50,对QLED器件20实现密封以阻挡水氧等对器件的侵害,其中,无机阻挡层30为水氧的有效阻挡层,但是在制备无机阻挡层30过程中会产生一些针孔或异物缺陷,而有机缓冲层40的作用就是覆盖无机阻挡层30的缺陷,有机缓冲层40还可以释放无机阻挡层30之间的应力,实现平坦化,并且,有机缓冲层40中掺杂了具有较高的热导率的氧化石墨烯,能够将QLED器件20产生的热量及时地通过薄膜封装层50传递出来,从而提高薄膜封装层50的散热性,进而提高QLED器件20的出光效率和使用寿命。
上述QLED器件的封装结构中,可以根据实际情况或需要,形成如图5所示的无机阻挡层-有机缓冲层-无机阻挡层三层交替层叠设置的薄膜封装层50,也可以形成如图6所示的无机阻挡层-有机缓冲层-无机阻挡层-有机缓冲层-无机阻挡层五层交替层叠设置的薄膜封装层50’,以增强薄膜封装层的密封性,在此不做限制。
综上所述,本发明的QLED器件的封装方法在QLED器件上形成多层无机阻挡层与至少一层有机缓冲层交替层叠设置的薄膜封装层,对QLED器件实现密封以阻挡水氧等对器件的侵害,并且有机缓冲层中还掺杂了导热材料,能够将QLED器件产生的热量及时地通过薄膜封装层传递出来,从而提高薄膜封装层的散热性,进而提高QLED器件的出光效率和使用寿命。本发明的QLED器件的封装结构在QLED器件上形成多层无机阻挡层与至少一层有机缓冲层交替层叠设置的薄膜封装层,对QLED器件实现密封以阻挡水氧等对器件的侵害,并且有机缓冲层中还掺杂了导热材料,能够将QLED器件产生的热量及时地通过薄膜封装层传递出来,从而提高薄膜封装层的散热性,进而提高QLED器件的出光效率和使用寿命。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。
Claims (10)
1.一种QLED器件的封装方法,其特征在于,包括如下步骤:
步骤1,提供一衬底基板(10),在所述衬底基板(10)上形成QLED器件(20);
步骤2,在所述QLED器件(20)和衬底基板(10)上形成薄膜封装层(50);
所述薄膜封装层(50)包括交替层叠设置的多层无机阻挡层(30)和至少一层有机缓冲层(40);
所述有机缓冲层(40)中掺杂有导热材料。
2.如权利要求1所述的QLED器件的封装方法,其特征在于,所述步骤2形成薄膜封装层(50)的具体方法为:在所述QLED器件(20)和衬底基板(10)上形成一层无机阻挡层(30),在所述无机阻挡层(30)形成一层有机缓冲层(40),重复多次上述制作步骤,形成多层无机阻挡层(30)和至少一层有机缓冲层(40)交替层叠设置的薄膜封装层(50)。
3.如权利要求1所述的QLED器件的封装方法,其特征在于,所述导热材料为氧化石墨烯;所述有机缓冲层(40)中导热材料的质量分数小于或等于5%。
4.如权利要求2所述的QLED器件的封装方法,其特征在于,形成所述有机缓冲层(40)的具体方法为:在所述无机阻挡层(30)上将导热材料、有机物及有机溶剂的混合物通过丝网印刷、旋涂、喷墨打印或流延成膜的方式形成有机膜层,并固化该有机膜层得到所述有机缓冲层(40);所述有机物为环氧树脂、硅基聚合物及聚甲基丙烯酸甲酯中的一种或多种的组合,所述有机溶剂为乙醇、甲苯、苯酚、或苯甲醚。
5.如权利要求1所述的QLED器件的封装方法,其特征在于,所述有机缓冲层(40)的厚度为500-2000nm。
6.一种QLED器件的封装结构,其特征在于,包括:
衬底基板(10);
设于所述衬底基板(10)上的QLED器件(20);
设于所述衬底基板(10)上并覆盖所述QLED器件(20)的薄膜封装层(50);
所述薄膜封装层(50)包括交替层叠设置的多层无机阻挡层(30)和至少一层有机缓冲层(40);
所述有机缓冲层(40)中掺杂有导热材料。
7.如权利要求6所述的QLED器件的封装结构,其特征在于,所述有机缓冲层(40)的厚度为500-2000nm。
8.如权利要求6所述的QLED器件的封装结构,其特征在于,所述有机缓冲层(40)中的有机物为环氧树脂、硅基聚合物及聚甲基丙烯酸甲酯中的一种或多种的组合。
9.如权利要求6所述的QLED器件的封装结构,其特征在于,所述导热材料为氧化石墨烯;所述有机缓冲层(40)中导热材料的质量分数小于或等于5%。
10.如权利要求6所述的QLED器件的封装结构,其特征在于,所述薄膜封装层(50)中靠近QLED器件(20)的一层为无机阻挡层(30)。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710931768.4A CN107565059A (zh) | 2017-10-09 | 2017-10-09 | Qled器件的封装方法及封装结构 |
US15/579,557 US10566506B2 (en) | 2017-10-09 | 2017-11-15 | Packaging method and package structure of QLED device |
PCT/CN2017/110991 WO2019071703A1 (zh) | 2017-10-09 | 2017-11-15 | Qled器件的封装方法及封装结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710931768.4A CN107565059A (zh) | 2017-10-09 | 2017-10-09 | Qled器件的封装方法及封装结构 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107565059A true CN107565059A (zh) | 2018-01-09 |
Family
ID=60985169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710931768.4A Pending CN107565059A (zh) | 2017-10-09 | 2017-10-09 | Qled器件的封装方法及封装结构 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10566506B2 (zh) |
CN (1) | CN107565059A (zh) |
WO (1) | WO2019071703A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019205600A1 (zh) * | 2018-04-25 | 2019-10-31 | 云谷(固安)科技有限公司 | 薄膜封装结构、薄膜封装方法及显示面板 |
CN112512793A (zh) * | 2018-08-16 | 2021-03-16 | 株式会社Lg化学 | 封装膜 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107833976A (zh) * | 2017-10-24 | 2018-03-23 | 深圳市华星光电半导体显示技术有限公司 | Qled器件的制作方法及qled器件 |
WO2020214930A1 (en) * | 2019-04-19 | 2020-10-22 | Nanosys, Inc. | Flexible electroluminescent devices |
CN110061043B (zh) * | 2019-04-30 | 2021-08-31 | 武汉天马微电子有限公司 | 一种显示装置及其制作方法 |
CN112080099A (zh) * | 2020-09-21 | 2020-12-15 | 合肥福纳科技有限公司 | 一种qled器件、复合材料及其应用 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106753208A (zh) * | 2016-11-21 | 2017-05-31 | 北京化工大学 | 一种氧化石墨烯改性的led导热灌封胶及其制备方法 |
CN106972113A (zh) * | 2017-05-25 | 2017-07-21 | 深圳市华星光电技术有限公司 | Oled器件的封装组件及封装方法、显示装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102293981B1 (ko) * | 2014-10-13 | 2021-08-26 | 엘지디스플레이 주식회사 | 유기발광표시패널 및 그 제조방법 |
US10627672B2 (en) * | 2015-09-22 | 2020-04-21 | Samsung Electronics Co., Ltd. | LED package, backlight unit and illumination device including same, and liquid crystal display including backlight unit |
CN106633887B (zh) * | 2016-06-21 | 2020-03-27 | 深圳市大族元亨光电股份有限公司 | 大功率led用石墨烯导热硅脂及其制备方法 |
KR102689815B1 (ko) * | 2016-11-15 | 2024-07-29 | 엘지디스플레이 주식회사 | 양자점 발광다이오드 및 이를 이용한 발광 표시장치 |
-
2017
- 2017-10-09 CN CN201710931768.4A patent/CN107565059A/zh active Pending
- 2017-11-15 WO PCT/CN2017/110991 patent/WO2019071703A1/zh active Application Filing
- 2017-11-15 US US15/579,557 patent/US10566506B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106753208A (zh) * | 2016-11-21 | 2017-05-31 | 北京化工大学 | 一种氧化石墨烯改性的led导热灌封胶及其制备方法 |
CN106972113A (zh) * | 2017-05-25 | 2017-07-21 | 深圳市华星光电技术有限公司 | Oled器件的封装组件及封装方法、显示装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019205600A1 (zh) * | 2018-04-25 | 2019-10-31 | 云谷(固安)科技有限公司 | 薄膜封装结构、薄膜封装方法及显示面板 |
CN112512793A (zh) * | 2018-08-16 | 2021-03-16 | 株式会社Lg化学 | 封装膜 |
CN112512793B (zh) * | 2018-08-16 | 2023-04-07 | 株式会社Lg化学 | 封装膜 |
Also Published As
Publication number | Publication date |
---|---|
WO2019071703A1 (zh) | 2019-04-18 |
US20190189869A1 (en) | 2019-06-20 |
US10566506B2 (en) | 2020-02-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107565059A (zh) | Qled器件的封装方法及封装结构 | |
CN105932039B (zh) | Oled显示装置 | |
Wei et al. | A universal ternary‐solvent‐ink strategy toward efficient inkjet‐printed perovskite quantum dot light‐emitting diodes | |
CN106684259B (zh) | Oled封装方法与oled封装结构 | |
CN106449711B (zh) | 柔性amoled显示器的制作方法 | |
CN106848093B (zh) | Oled封装方法与oled封装结构 | |
CN103201869B (zh) | 有机电子器件用衬底和包括该衬底的有机电子器件 | |
Kim et al. | Paper as a substrate for inorganic powder electroluminescence devices | |
Do et al. | N, S‐Induced Electronic States of Carbon Nanodots Toward White Electroluminescence | |
CN104051672B (zh) | Oled像素结构 | |
CN104137649B (zh) | 有机电子元件和有机电子元件的制造方法 | |
KR101114352B1 (ko) | 유기전자소자용 기판 및 그 제조방법 | |
US9960381B2 (en) | Lighting device, method for producing a lighting device | |
CN104576961B (zh) | 一种基于量子点的oled白光器件及其制作方法 | |
CN106449704B (zh) | Oled显示装置 | |
Ji et al. | Highly efficient flexible quantum-dot light emitting diodes with an ITO/Ag/ITO cathode | |
CN105070848B (zh) | 显示面板、有机发光器件及其制备方法 | |
CN104409650A (zh) | 一种发光器件及其制作方法、显示装置、光检测装置 | |
CN106654042B (zh) | 柔性oled显示器及其制作方法 | |
CN107331789B (zh) | Oled显示面板及其制作方法 | |
JPWO2013057873A1 (ja) | 有機エレクトロルミネセンスディスプレイパネル及びその製造方法 | |
CN106601931B (zh) | Oled封装方法与oled封装结构 | |
Yin et al. | Efficient and angle-stable white top-emitting organic light emitting devices with patterned quantum dots down-conversion films | |
CN108682753A (zh) | Oled显示面板及其制作方法 | |
Xiang et al. | The Dawn of QLED for the FPD Industry |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180109 |
|
RJ01 | Rejection of invention patent application after publication |