WO2017166330A1 - 石墨烯液晶显示装置、石墨烯发光元件及其制作方法 - Google Patents

石墨烯液晶显示装置、石墨烯发光元件及其制作方法 Download PDF

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WO2017166330A1
WO2017166330A1 PCT/CN2016/078789 CN2016078789W WO2017166330A1 WO 2017166330 A1 WO2017166330 A1 WO 2017166330A1 CN 2016078789 W CN2016078789 W CN 2016078789W WO 2017166330 A1 WO2017166330 A1 WO 2017166330A1
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graphene
light
emitting
insulating protective
protective layer
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PCT/CN2016/078789
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English (en)
French (fr)
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樊勇
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深圳市华星光电技术有限公司
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Priority to US15/038,469 priority Critical patent/US20180090638A1/en
Publication of WO2017166330A1 publication Critical patent/WO2017166330A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0054—Processes for devices with an active region comprising only group IV elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133605—Direct backlight including specially adapted reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133621—Illuminating devices providing coloured light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0037—Devices characterised by their operation having a MIS barrier layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0041—Devices characterised by their operation characterised by field-effect operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133612—Electrical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission

Definitions

  • the present invention relates to the field of liquid crystal display, and in particular to a graphene liquid crystal display device, a graphene light-emitting element, and a method of fabricating the same.
  • Liquid crystal display has many advantages such as thin body, power saving, no radiation, etc., and has been widely used, such as LCD TV, mobile phone, personal digital assistant, digital camera, computer screen or laptop screen. Wait.
  • Most of the conventional liquid crystal display devices are backlight type liquid crystal display devices, and include a casing, a liquid crystal panel disposed in the casing, and a backlight module.
  • the liquid crystal panel itself does not emit light, and the backlight module is required to provide a light source to the liquid crystal panel to display the image normally.
  • the existing backlight module is composed of a backlight, a light guide plate, a transmitting sheet and an optical film. Because of its low luminous efficiency and large power consumption, it has been unable to meet the further development requirements of the liquid crystal display device.
  • the technical problem to be solved by the present invention is to provide a graphene liquid crystal display device, a graphene light-emitting element, and a manufacturing method thereof, which can solve the problems of low luminous efficiency and large power consumption of the backlight module in the prior art.
  • a technical solution adopted by the present invention is to provide a method for fabricating a graphene light-emitting element, the method comprising: providing a lower substrate, forming a plurality of metal gates spaced apart on the lower substrate; forming a cover a first insulating protective layer of the substrate and the metal gate; forming a graphene light-emitting layer on the first insulating protective layer, wherein the graphene light-emitting layer comprises a plurality of graphene light-emitting blocks arranged at intervals; forming on each of the graphene light-emitting blocks a graphene source and a graphene drain disposed at intervals; forming a second insulating protective layer covering the first insulating protective layer, the graphene emitting layer, the graphene source, and the graphene drain; The upper substrate is bonded to the second insulating protective layer.
  • the step of forming a plurality of metal gates spaced apart on the lower substrate comprises: forming a metal gate plating film by sputtering or evaporation on the lower substrate; performing a photolithography process on the metal gate plating film to form a plurality of intervals Metal gates.
  • the step of forming a graphene light-emitting layer on the first insulating protective layer comprises: forming a first graphene film layer by printing, inkjet printing or coating on the first insulating protective layer; and forming the first graphene film The layer is subjected to a drying treatment to cure the first graphene film layer; the cured first graphene film layer is subjected to ion etching or laser etching to form a graphene light-emitting layer.
  • the step of forming the spaced-apart graphene source and the graphene drain on each graphene light-emitting block comprises: forming a second graphene film layer on the graphene light-emitting layer by printing, inkjet printing or coating Drying the second graphene film layer to cure the second graphene film layer; performing ion etching or laser etching on the cured second graphene film layer to form spaced-up graphene on each graphene light-emitting block Source and graphene drain.
  • the material of the metal gate is a high reflectivity metal
  • the material of the graphene source and the graphene drain is reduced graphene oxide
  • the material of the graphene light emitting layer is a semiconductor reduced graphene oxide.
  • the lower substrate and the upper substrate are water-blocking oxygen barrier plates, wherein the water-permeable oxygen barrier plate has a water permeability and oxygen permeability of less than 10 ⁇ 4 .
  • another technical solution adopted by the present invention is to provide a graphene light-emitting element including a lower substrate, a plurality of metal gates, a first insulating protective layer, and graphite from bottom to top.
  • the second insulating protective layer covers the first insulating protective layer, the graphene source, the graphene light-emitting
  • the material of the metal gate is a material of high reflectivity metal, graphene source and graphene drain
  • the material of the graphene light-emitting layer is a semiconductor-reduced graphene oxide.
  • the lower substrate and the upper substrate are water-blocking oxygen barrier plates, wherein the water-permeable oxygen barrier plate has a water permeability and oxygen permeability of less than 10 ⁇ 4 .
  • a graphene liquid crystal display device including a graphene light-emitting element including a lower substrate from bottom to top, a plurality of metal gates, a first insulating protective layer, a graphene light emitting layer, a plurality of graphene sources, a plurality of graphene drains, a second insulating protective layer, and an upper substrate; wherein the plurality of metal gates are spaced apart On the substrate, wherein the first insulating protective layer covers the lower substrate and the metal gate; wherein the graphene light-emitting layer is disposed on the first insulating protective layer, and includes a plurality of graphene light-emitting blocks disposed at intervals; wherein the graphene source And a drain of the graphene is disposed on the graphene light-emitting block; wherein the second insulating protective layer covers the first insulating protective layer, the graphene source, the graphene light-e
  • the material of the metal gate is a high reflectivity metal
  • the material of the graphene source and the graphene drain is reduced graphene oxide
  • the material of the graphene light emitting layer is a semiconductor reduced graphene oxide.
  • the lower substrate and the upper substrate are water-blocking oxygen barrier plates, wherein the water-permeable oxygen barrier plate has a water permeability and oxygen permeability of less than 10 ⁇ 4 .
  • the graphene light-emitting element of the present invention uses a metal as a gate electrode, graphene as a source and a drain, and graphene as a light-emitting layer, thereby achieving an improvement in luminous efficiency of the light-emitting element while reducing The power consumption of the light-emitting element.
  • FIG. 1 is a schematic flow chart of a method for fabricating a graphene light-emitting device according to an embodiment of the present invention
  • 2A-2E are schematic structural views of a graphene light-emitting element in the manufacturing process of the manufacturing method shown in FIG. 1;
  • FIG. 3 is a schematic structural view of a graphene light-emitting element obtained by the manufacturing method shown in FIG. 1;
  • FIG. 4 is a schematic structural view of a graphene liquid crystal display device according to an embodiment of the present invention.
  • FIG. 1 is a flow chart showing a method of fabricating a graphene light-emitting device according to an embodiment of the present invention.
  • 2A-2E are schematic views showing the structure of a graphene light-emitting element in the manufacturing process of the fabrication method shown in Fig. 1. It should be noted that the method of the present invention is not limited to the sequence of the flow shown in FIG. 1 if substantially the same result is obtained. As shown in FIG. 1, the method includes the following steps:
  • Step S101 providing a lower substrate, and forming a plurality of metal gates spaced apart on the lower substrate.
  • step S101 the step of forming a plurality of metal gates spaced apart on the lower substrate comprises: forming a metal gate plating film by sputtering or evaporation on the lower substrate; performing a photolithography process on the metal gate plating film to form an interval Multiple metal gates are provided.
  • the material of the lower substrate may be water-proof, oxygen-proof transparent organic material (PET), glass or nickel.
  • PET oxygen-proof transparent organic material
  • the lower substrate is a water-blocking oxygen barrier, and the water permeability and oxygen permeability are less than 10 -4 , so that the water-blocking and oxygen barrier properties of the graphene light-emitting element can be improved.
  • the material of the metal gate is preferably a high reflectivity metal such as aluminum (Al), silver (Ag), an alloy thereof or the like, so that the luminous efficiency of the graphene light-emitting element can be further improved.
  • FIG. 2A is a schematic cross-sectional view of the lower substrate 10 on which the metal gate 20 is formed. As shown in FIG. 2A, a plurality of metal gates 20 are spaced apart from each other on the lower substrate 10.
  • Step S102 forming a first insulating protective layer covering the lower substrate and the metal gate.
  • step S102 the step of forming a first insulating protective layer covering the lower substrate and the metal gate comprises: depositing a first insulating protective layer on the lower substrate and the metal gate by chemical vapor deposition (CVD), wherein the first insulating layer The protective layer covers the lower substrate and the metal gate.
  • CVD chemical vapor deposition
  • the material of the first insulating protective layer is silicon nitride (SiNX).
  • FIG. 2B is a schematic cross-sectional view of the lower substrate 10 on which the first insulating protective layer 30 is formed. As shown in FIG. 2B, the first insulating protective layer 30 covers the lower substrate 10 and the metal gate 20.
  • Step S103 forming a graphene light-emitting layer on the first insulating protective layer, wherein the graphene light-emitting layer comprises a plurality of graphene light-emitting blocks arranged at intervals.
  • the step of forming the graphene light-emitting layer on the first insulating protective layer comprises: forming a first graphene film layer by printing, inkjet printing or coating on the first insulating protective layer; The graphene film layer is dried to cure the first graphene film layer; the cured first graphene film layer is subjected to ion etching or laser etching to form a graphene light-emitting layer.
  • the material of the graphene light-emitting layer is a semi-reduced graphene oxide.
  • the semiconductor reduced graphene oxide can be prepared by a hummer's modification method of solution reaction
  • the graphene light-emitting layer can be prepared by printing, inkjet printing or coating.
  • FIG. 2C is a schematic cross-sectional view of the lower substrate 10 on which the graphene light-emitting layer 40 is formed.
  • the graphene light-emitting layer 40 is disposed on the first insulating protective layer 30, and the graphene light-emitting layer 40 includes a plurality of graphene light-emitting blocks 41 disposed at intervals, wherein the graphene light-emitting block 41 and the metal gate 20 One-to-one correspondence.
  • the width of the graphene light-emitting block 41 is less than or equal to the width of the metal gate 20, and the graphene light-emitting block 41 is disposed above the metal gate 20 from another angle.
  • Step S104 forming a spaced-apart graphene source and a graphene drain on each of the graphene light-emitting blocks.
  • step S104 the step of forming the spaced-apart graphene source and the graphene drain on each graphene light-emitting block comprises: forming a second graphite by printing, inkjet printing or coating on the graphene light-emitting layer a thin film layer; drying the second graphene film layer to cure the second graphene film layer; performing ion etching or laser etching on the cured second graphene film layer to form an interval on each of the graphene light-emitting blocks Graphene source and graphene drain.
  • the material of the graphene source and the graphene drain is reduced graphene oxide.
  • the reduced graphene oxide can be prepared by a hummer's improved method of solution reaction, the graphene source and the graphene drain can be printed, inkjet printed or coated. Prepared by the formula.
  • FIG. 2D is a schematic cross-sectional view of the lower substrate 10 on which the graphene source 51 and the graphene drain 52 are formed.
  • the graphene source 51 and the graphene drain 52 are alternately disposed on the graphene light-emitting layer 40 in this order, wherein each graphene light-emitting block 41 is provided with a pair of graphene source 51 and graphene leakage. Extreme 52.
  • Step S105 forming a second insulating protective layer covering the first insulating protective layer, the graphene emitting layer, the graphene source, and the graphene drain.
  • step S105 the step of forming a second insulating protective layer covering the first insulating protective layer, the graphene emitting layer, the graphene source, and the graphene drain includes: a first insulating protective layer, a graphene emitting layer, and graphite
  • a second insulating protective layer is deposited on the olefin source and the graphene drain by chemical vapor deposition (CVD), wherein the second insulating protective layer covers the first insulating protective layer, the graphene emitting layer, the graphene source, and the graphene Drain.
  • the material of the second insulating protective layer is silicon nitride (SiNX).
  • FIG. 2E is a schematic cross-sectional view of the lower substrate 10 on which the second insulating protective layer 60 is formed. As shown in FIG. 2E, the second insulating protective layer 60 covers the first insulating protective layer 30, the graphene light emitting layer 40, the graphene source 51, and the graphene drain 52.
  • the second insulating protective layer 60 and the first insulating protective layer 30 are made of the same material. In other embodiments, the second insulating protective layer 60 and the first insulating protective layer 30 may also be made of different materials.
  • Step S106 bonding the upper substrate to the second insulating protective layer.
  • the material of the upper substrate may be water-repellent oxygen barrier organic material (PET) or glass.
  • PET water-repellent oxygen barrier organic material
  • the upper substrate is a water-blocking oxygen barrier, and the water permeability and oxygen permeability are less than 10 -4 , so that the water-proof and oxygen barrier property of the graphene light-emitting element can be improved.
  • the graphene light-emitting element is completed.
  • FIG. 3 is a schematic structural view of a graphene light-emitting element prepared by the manufacturing method shown in FIG.
  • the graphene light-emitting element 100 includes a lower substrate 10 and a plurality of gold in order from bottom to top.
  • a plurality of metal gates 20 are spaced apart from each other on the lower substrate 10.
  • the material of the metal gate 20 is a high reflectivity metal such as aluminum (Al), silver (Ag), alloys thereof and the like, so that the luminous efficiency of the graphene light-emitting element can be further improved.
  • the first insulating protective layer 30 covers the lower substrate 10 and the metal gate 20.
  • the material of the first insulating protective layer 30 is silicon nitride.
  • the graphene light-emitting layer 40 is disposed on the first insulating protective layer 30, and the graphene light-emitting layer 40 includes a plurality of graphene light-emitting blocks 41 that are spaced apart.
  • the material of the graphene light-emitting layer 40 is preferably a semiconductor-reduced graphene oxide.
  • the graphene source 51 and the graphene drain 52 are spaced apart from each other on the graphene light-emitting block 41.
  • the material of the graphene source 51 and the graphene drain 52 is preferably reduced graphene oxide.
  • the second insulating protective layer 60 covers the first insulating protective layer 30, the graphene source 51, the graphene light-emitting block 41, and the graphene drain 52.
  • the material of the second insulating protective layer 60 is silicon nitride.
  • the upper substrate 70 covers the second insulating protective layer 60.
  • the upper substrate 10 and the lower substrate 70 are water-blocking oxygen barrier plates having a water permeability and oxygen permeability of less than 10 -4 , so that the water-blocking and oxygen barrier properties of the graphene light-emitting device 100 can be improved.
  • graphene is a two-dimensional material, its characteristics are interposed between semiconductor and conductor. Specifically, graphene has a hard texture, high transparency (penetration rate of 97.7%), and high thermal conductivity (up to 5300W/m ⁇ K), excellent electron mobility (more than 15000cm2/V ⁇ s), etc. Therefore, graphene can be used as a material for the source and drain electrodes and the light-emitting layer, thereby further improving the luminous efficiency of the graphene light-emitting device. Excellent features with low power consumption.
  • the principle of light emission of the graphene light-emitting element 100 is that in the graphene light-emitting element 100, the magnitude of the electric field generated by the voltage of the metal gate 20 can adjust the Fermi level of the graphene light-emitting block 41, so that the graphene light-emitting block 41 can be adjusted.
  • the wavelengths in turn, cause the graphene light-emitting blocks 41 to emit light of different colors.
  • the graphene light-emitting block 41 when a metal The voltage difference (Vgs) between the gate electrode 20 and the graphene source 51 is between 0 and 10 V, and the graphene source 51 and the graphene drain 52 have a voltage difference (Vds) greater than the turn-on voltage (Vth).
  • the light-emitting block 41 emits red light; when the voltage difference (Vgs) between the metal gate 20 and the graphene source 51 is between 20 and 30 V, and the voltage difference (Vds) between the graphene source 51 and the graphene drain 52 is greater than When the voltage (Vth) is turned on, the graphene light-emitting block 41 emits green light; when the voltage difference (Vgs) between the metal gate 20 and the graphene source 51 is between 40 and 50 V, and the graphene source 51 and the graphene leak When the voltage difference (Vds) of the pole 52 is greater than the turn-on voltage (Vth), the graphene light-emitting block 41 emits blue light.
  • the intensity of red, green or blue light emitted by the graphene light-emitting block 41 can be changed, so that the gray scale can be adjusted.
  • FIG. 4 is a schematic structural view of a graphene liquid crystal display device of the present invention.
  • the graphene liquid crystal display device 1 includes the above-described graphene light-emitting element 100.
  • the invention has the beneficial effects that the graphene light-emitting element of the invention uses a high reflectivity metal as a gate electrode, reduced graphene oxide as a source and a drain, and a semiconductor-reduced graphene oxide as a light-emitting layer, thereby realizing an improvement of the light-emitting element.
  • the power consumption of the light-emitting element is reduced.
  • the upper and lower substrates of the graphene light-emitting device of the present invention employ a water-blocking oxygen barrier, thereby improving the water-proof and oxygen barrier properties of the graphene light-emitting device.
  • the graphene light-emitting element of the present invention does not require an additional light guide plate or optical film, thereby reducing the material cost of the liquid crystal display device, and at the same time, making the liquid crystal display device thinner and lighter.

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Abstract

一种石墨烯显示装置（1）、石墨烯发光元件（100）及其制作方法。该制作方法包括：提供下基板（10），在下基板（10）上形成间隔设置的多个金属栅极（20）；形成覆盖下基板（10）和金属栅极（20）的第一绝缘保护层（30）；在第一绝缘保护层（30）上形成石墨烯发光层（40），其中，石墨烯发光层（40）包括间隔设置的多个石墨烯发光块（41）；在各石墨烯发光块（41）上形成间隔设置的石墨烯源极（51）和石墨烯漏极（52）；形成覆盖第一绝缘保护层（30）、石墨烯发光层（40）、石墨烯源极（51）和石墨烯漏极（52）的第二绝缘保护层（60）；在第二绝缘保护层（60）上贴合上基板（70）。通过上述方式，石墨烯发光元件使用金属作为栅极、石墨烯作为源极和漏极、以及石墨烯作为发光层，从而实现了提高发光元件的发光效率的同时，降低了发光元件的功耗。

Description

石墨烯液晶显示装置、石墨烯发光元件及其制作方法 【技术领域】
本发明涉及液晶显示领域，特别是涉及一种石墨烯液晶显示装置、石墨烯发光元件及其制作方法。
【背景技术】
液晶显示装置(Liquid Crystal Display，LCD)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用，如液晶电视、移动电话、个人数字助理、数字相机、计算机屏幕或笔记本电脑屏幕等。
现有的液晶显示装置大部分为背光型液晶显示装置，其包括壳体、设于壳体内的液晶面板及背光模组(Backlight module)。液晶面板本身不发光，需要由背光模组提供光源给液晶面板来正常显示影像。现有的背光模组由背光源、导光板、发射片及光学膜片等组成，由于其发光效率较低，功耗较大，已经无法满足液晶显示装置的进一步发展的需求。
【发明内容】
本发明主要解决的技术问题是提供一种石墨烯液晶显示装置、石墨烯发光元件及其制作方法，能够解决现有技术中背光模组发光效率较低，功耗较大的问题。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种石墨烯发光元件的制作方法，该方法包括：提供下基板，在下基板上形成间隔设置的多个金属栅极；形成覆盖下基板和金属栅极的第一绝缘保护层；在第一绝缘保护层上形成石墨烯发光层，其中，石墨烯发光层包括间隔设置的多个石墨烯发光块；在各石墨烯发光块上形成间隔设置的石墨烯源极和石墨烯漏极；形成覆盖第一绝缘保护层、石墨烯发光层、石墨烯源极和石墨烯漏极的第二绝缘保护层； 在第二绝缘保护层上贴合上基板。
其中，在下基板上形成间隔设置的多个金属栅极的步骤包括：在下基板上通过溅镀或蒸镀的方式形成金属栅极镀膜；对金属栅极镀膜实施光刻制程以形成间隔设置的多个金属栅极。
其中，在第一绝缘保护层上形成石墨烯发光层的步骤包括：在第一绝缘保护层上通过印刷、喷墨打印或涂布的方式形成第一石墨烯薄膜层；对第一石墨烯薄膜层进行干燥处理以固化第一石墨烯薄膜层；对固化后的第一石墨烯薄膜层实施离子蚀刻或者激光蚀刻以形成石墨烯发光层。
其中，在各石墨烯发光块上形成间隔设置的石墨烯源极和石墨烯漏极的步骤包括：在石墨烯发光层上通过印刷、喷墨打印或涂布的方式形成第二石墨烯薄膜层；对第二石墨烯薄膜层进行干燥处理以固化第二石墨烯薄膜层；对固化后的第二石墨烯薄膜层实施离子蚀刻或者激光蚀刻以在各石墨烯发光块上形成间隔设置的石墨烯源极和石墨烯漏极。
其中，金属栅极的材料为高反射率金属，石墨烯源极和石墨烯漏极的材料为还原氧化石墨烯，石墨烯发光层的材料为半导体还原氧化石墨烯。
其中，下基板和上基板为隔水隔氧基板，其中，隔水隔氧基板的透水透氧率小于10-4。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种石墨烯发光元件，该石墨烯发光元件从下到上包括下基板、多个金属栅极、第一绝缘保护层、石墨烯发光层、多个石墨烯源极、多个石墨烯漏极、第二绝缘保护层和上基板；其中，多个金属栅极间隔设置在下基板上；其中，第一绝缘保护层覆盖下基板和金属栅极；其中，石墨烯发光层设置在第一绝缘保护层上，包括间隔设置的多个石墨烯发光块；其中，石墨烯源极和石墨烯漏极间隔设置于石墨烯发光块上；其中，第二绝缘保护层覆盖第一绝缘保护层、石墨烯源极、石墨烯发光块和石墨烯漏极；其中，上基板覆盖第二绝缘保护层。
其中，金属栅极的材料为高反射率金属，石墨烯源极和石墨烯漏极的材料 为还原氧化石墨烯，石墨烯发光层的材料为半导体还原氧化石墨烯。
其中，下基板和上基板为隔水隔氧基板，其中，隔水隔氧基板的透水透氧率小于10-4。
为解决上述技术问题，本发明采用的再一个技术方案是：提供一种石墨烯液晶显示装置，该石墨烯液晶显示装置包括石墨烯发光元件，该石墨烯发光元件从下到上包括下基板、多个金属栅极、第一绝缘保护层、石墨烯发光层、多个石墨烯源极、多个石墨烯漏极、第二绝缘保护层和上基板；其中，多个金属栅极间隔设置在下基板上；其中，第一绝缘保护层覆盖下基板和金属栅极；其中，石墨烯发光层设置在第一绝缘保护层上，包括间隔设置的多个石墨烯发光块；其中，石墨烯源极和石墨烯漏极间隔设置于石墨烯发光块上；其中，第二绝缘保护层覆盖第一绝缘保护层、石墨烯源极、石墨烯发光块和石墨烯漏极；其中，上基板覆盖第二绝缘保护层。
其中，金属栅极的材料为高反射率金属，石墨烯源极和石墨烯漏极的材料为还原氧化石墨烯，石墨烯发光层的材料为半导体还原氧化石墨烯。
其中，下基板和上基板为隔水隔氧基板，其中，隔水隔氧基板的透水透氧率小于10-4。
本发明的有益效果是：本发明的石墨烯发光元件采用金属作为栅极、石墨烯作为源极和漏极、以及石墨烯作为发光层，从而实现了提高发光元件的发光效率的同时，降低了发光元件的功耗。
【附图说明】
图1是本发明实施例的石墨烯发光元件的制作方法的流程示意图；
图2A-2E是图1所示制作方法在制作过程中的石墨烯发光元件的结构示意图；
图3是图1所示制作方法制得的石墨烯发光元件的结构示意图；
图4是本发明实施例的石墨烯液晶显示装置的结构示意图。
【具体实施方式】
在说明书及权利要求书当中使用了某些词汇来指称特定的组件，所属领域中的技术人员应可理解，制造商可能会用不同的名词来称呼同样的组件。本说明书及权利要求书并不以名称的差异来作为区分组件的方式，而是以组件在功能上的差异来作为区分的基准。下面结合附图和实施例对本发明进行详细说明。
图1是本发明实施例的石墨烯发光元件的制作方法的流程示意图。图2A-2E是图1所示制作方法在制作过程中的石墨烯发光元件的结构示意图。需注意的是，若有实质上相同的结果，本发明的方法并不以图1所示的流程顺序为限。如图1所示，该方法包括如下步骤：
步骤S101：提供下基板，在下基板上形成间隔设置的多个金属栅极。
在步骤S101中，在下基板上形成间隔设置的多个金属栅极的步骤包括：在下基板上通过溅镀或蒸镀的方式形成金属栅极镀膜；对金属栅极镀膜实施光刻制程以形成间隔设置的多个金属栅极。
其中，下基板的材质可以为隔水隔氧透明有机材质(PET)、玻璃或镍等。在本实施例中，下基板为隔水隔氧基板，其透水透氧率小于10-4，从而可以提高石墨烯发光元件的隔水隔氧的特性。
其中，金属栅极的材料优选为高反射率金属，例如铝(Al)、银(Ag)及其合金等，从而可以进一步提高石墨烯发光元件的发光效率。
请一并参考图2A，图2A为形成有金属栅极20的下基板10的剖面结构示意图。如图2A所示，多个金属栅极20间隔设置在下基板10上。
步骤S102：形成覆盖下基板和金属栅极的第一绝缘保护层。
在步骤S102中，形成覆盖下基板和金属栅极的第一绝缘保护层的步骤包括：在下基板和金属栅极上采用化学气相沉积法(CVD)沉积第一绝缘保护层，其中，第一绝缘保护层覆盖下基板和金属栅极。
优选地，第一绝缘保护层的材料为氮化硅(SiNX)。
请一并参考图2B，图2B为形成有第一绝缘保护层30的下基板10的剖面结构示意图。如图2B所示，第一绝缘保护层30覆盖下基板10和金属栅极20。
步骤S103：在第一绝缘保护层上形成石墨烯发光层，其中，石墨烯发光层包括间隔设置的多个石墨烯发光块。
在步骤S103中，在第一绝缘保护层上形成石墨烯发光层的步骤包括：在第一绝缘保护层上通过印刷、喷墨打印或涂布的方式形成第一石墨烯薄膜层；对第一石墨烯薄膜层进行干燥处理以固化第一石墨烯薄膜层；对固化后的第一石墨烯薄膜层实施离子蚀刻或者激光蚀刻以形成石墨烯发光层。
优选地，石墨烯发光层的材料为半导体还原氧化石墨烯(Semi-reduced graphene oxide)。其中，由于半导体还原氧化石墨烯可以采用溶液反应的hummer’s改进法来制备，故石墨烯发光层可以采用印刷、喷墨打印或涂布方式来制备。
请一并参考图2C，图2C为形成有石墨烯发光层40的下基板10的剖面结构示意图。如图2C所示，石墨烯发光层40设置在第一绝缘保护层30上，石墨烯发光层40包括间隔设置的多个石墨烯发光块41，其中，石墨烯发光块41与金属栅极20一一对应设置。优选地，石墨烯发光块41的宽度小于等于金属栅极20的宽度，换个角度来说，石墨烯发光块41设置在金属栅极20之上。
步骤S104：在各石墨烯发光块上形成间隔设置的石墨烯源极和石墨烯漏极。
在步骤S104中，在各石墨烯发光块上形成间隔设置的石墨烯源极和石墨烯漏极的步骤包括：在石墨烯发光层上通过印刷、喷墨打印或涂布的方式形成第二石墨烯薄膜层；对第二石墨烯薄膜层进行干燥处理以固化第二石墨烯薄膜层；对固化后的第二石墨烯薄膜层实施离子蚀刻或者激光蚀刻以在各石墨烯发光块上形成间隔设置的石墨烯源极和石墨烯漏极。
优选地，石墨烯源极和石墨烯漏极的材料为还原氧化石墨烯(Reduced graphene oxide)。其中，由于还原氧化石墨烯可以采用溶液反应的hummer’s改进法来制备，故石墨烯源极和石墨烯漏极可以采用印刷、喷墨打印或涂布方 式来制备。
请一并参考图2D，图2D为形成有石墨烯源极51和石墨烯漏极52的下基板10的剖面结构示意图。如图2D所示，石墨烯源极51和石墨烯漏极52依次交替设置在石墨烯发光层40上，其中，每一石墨烯发光块41上设置有一对石墨烯源极51和石墨烯漏极52。
步骤S105：形成覆盖第一绝缘保护层、石墨烯发光层、石墨烯源极和石墨烯漏极的第二绝缘保护层。
在步骤S105中，形成覆盖第一绝缘保护层、石墨烯发光层、石墨烯源极和石墨烯漏极的第二绝缘保护层的步骤包括：在第一绝缘保护层、石墨烯发光层、石墨烯源极和石墨烯漏极上采用化学气相沉积法(CVD)沉积第二绝缘保护层，其中，第二绝缘保护层覆盖第一绝缘保护层、石墨烯发光层、石墨烯源极和石墨烯漏极。
优选地，第二绝缘保护层的材料为氮化硅(SiNX)。
请一并参考图2E，图2E为形成有第二绝缘保护层60的下基板10的剖面结构示意图。如图2E所示，第二绝缘保护层60覆盖第一绝缘保护层30、石墨烯发光层40、石墨烯源极51和石墨烯漏极52。
在本实施例中，第二绝缘保护层60和第一绝缘保护层30采用相同的材料，在其它实施例中，第二绝缘保护层60和第一绝缘保护层30也可以采用不同的材料。
步骤S106：在第二绝缘保护层上贴合上基板。
在步骤S106中，上基板的材质可以为隔水隔氧有机材质(PET)或者玻璃等。优选地，在本实施例中，上基板为隔水隔氧基板，其透水透氧率小于10-4，从而可以提高石墨烯发光元件的隔水隔氧的特性。
当上基板贴合至第二绝缘保护层上后，自此，石墨烯发光元件制作完成。
请一并参考图3，图3是图1所示制作方法制得的石墨烯发光元件的结构示意图。如图3所示，石墨烯发光元件100从下到上依次包括下基板10、多个金 属栅极20、第一绝缘保护层30、石墨烯发光层40、多个石墨烯源极51、多个石墨烯漏极52、第二绝缘保护层60和上基板70。
多个金属栅极20间隔设置在下基板10上。优选地，金属栅极20的材料为高反射率金属，例如铝(Al)、银(Ag)及其合金等，从而可以进一步提高石墨烯发光元件的发光效率。
第一绝缘保护层30覆盖下基板10和金属栅极20。优选地，第一绝缘保护层30的材料为氮化硅。
石墨烯发光层40设置在第一绝缘保护层30上，石墨烯发光层40包括间隔设置的多个石墨烯发光块41。优选地，石墨烯发光层40的材料优选为半导体还原氧化石墨烯。
石墨烯源极51和石墨烯漏极52间隔设置于石墨烯发光块41上。优选地，石墨烯源极51和石墨烯漏极52的材料优选为还原氧化石墨烯。
第二绝缘保护层60覆盖第一绝缘保护层30、石墨烯源极51、石墨烯发光块41和石墨烯漏极52。优选地，第二绝缘保护层60的材料为氮化硅。
上基板70覆盖第二绝缘保护层60。优选地，上基板10和下基板70为隔水隔氧基板，其透水透氧率小于10-4，从而可以提高石墨烯发光元件100的隔水隔氧的特性。
需要说明的是，由于石墨烯是一种二维材料，其特征介入半导体与导体之间，具体来说，石墨烯具有质地坚硬，透明高(穿透率≈97.7％)，导热系数高(达5300W/m·K)，电子迁移率高(超过15000cm2/V·s)等优良特性，因此，石墨烯可以作为源漏极以及发光层的材料，进而使得石墨烯发光元件具有了发光效率高、功耗低的优良特性。
另外，石墨烯发光元件100的发光原理是：石墨烯发光元件100中，金属栅极20的电压产生的电场大小可以调节石墨烯发光块41的费米能级，从而可以调节石墨烯发光块41的波长，进而使得石墨烯发光块41发出不同颜色的光。
具体来说，以石墨烯发光块41为半导体还原氧化石墨烯为例来说，当金属 栅极20和石墨烯源极51的电压差(Vgs)在0～10V之间，且石墨烯源极51和石墨烯漏极52的电压差(Vds)大于开启电压(Vth)时，石墨烯发光块41发红光；当金属栅极20和石墨烯源极51的电压差(Vgs)在20～30V之间，且石墨烯源极51和石墨烯漏极52的电压差(Vds)大于开启电压(Vth)时，石墨烯发光块41发绿光；当金属栅极20和石墨烯源极51的电压差(Vgs)在40～50V之间，且石墨烯源极51和石墨烯漏极52的电压差(Vds)大于开启电压(Vth)时，石墨烯发光块41发蓝光。
另外，通过改变石墨烯源极51和石墨烯漏极52的电压差(Vds)的大小可以改变石墨烯发光块41发出的红光、绿光或蓝光的强弱，从而可以调节灰阶。
请一并参考图4，图4是本发明石墨烯液晶显示装置的结构示意图。如图4所示，石墨烯液晶显示装置1包括了上述石墨烯发光元件100。
本发明的有益效果是：本发明的石墨烯发光元件采用高反射率金属作为栅极、还原氧化石墨烯作为源极和漏极、以及半导体还原氧化石墨烯作为发光层，从而实现了提高发光元件的发光效率的同时，降低发光元件的功耗。其次，本发明的石墨烯发光元件的上下基板采用隔水隔氧基板，从而提升了石墨烯发光元件的隔水隔氧特性。再次，与现有技术相比，本发明的石墨烯发光元件不需要额外的导光板、光学膜片，从而降低了液晶显示装置的材料成本，与此同时，使得液晶显示装置更加轻薄化。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (12)

  1. 一种石墨烯发光元件的制作方法，其中，所述方法包括：
    提供下基板，在所述下基板上形成间隔设置的多个金属栅极；
    形成覆盖所述下基板和所述金属栅极的第一绝缘保护层；
    在所述第一绝缘保护层上形成石墨烯发光层，其中，所述石墨烯发光层包括间隔设置的多个石墨烯发光块；
    在各所述石墨烯发光块上形成间隔设置的石墨烯源极和石墨烯漏极；
    形成覆盖所述第一绝缘保护层、所述石墨烯发光层、所述石墨烯源极和所述石墨烯漏极的第二绝缘保护层；
    在所述第二绝缘保护层上贴合上基板。
  2. 根据权利要求1所述的制作方法，其中，所述在所述下基板上形成间隔设置的多个金属栅极的步骤包括：
    在所述下基板上通过溅镀或蒸镀的方式形成金属栅极镀膜；
    对所述金属栅极镀膜实施光刻制程以形成间隔设置的多个所述金属栅极。
  3. 根据权利要求1所述的制作方法，其中，所述在所述第一绝缘保护层上形成石墨烯发光层的步骤包括：
    在所述第一绝缘保护层上通过印刷、喷墨打印或涂布的方式形成第一石墨烯薄膜层；
    对所述第一石墨烯薄膜层进行干燥处理以固化所述第一石墨烯薄膜层；
    对固化后的所述第一石墨烯薄膜层实施离子蚀刻或者激光蚀刻以形成所述石墨烯发光层。
  4. 根据权利要求1所述的制作方法，其中，所述在各所述石墨烯发光块上形成间隔设置的石墨烯源极和石墨烯漏极的步骤包括：
    在所述石墨烯发光层上通过印刷、喷墨打印或涂布的方式形成第二石墨烯薄膜层；
    对所述第二石墨烯薄膜层进行干燥处理以固化所述第二石墨烯薄膜层；
    对固化后的所述第二石墨烯薄膜层实施离子蚀刻或者激光蚀刻以在各所述石墨烯发光块上形成间隔设置的所述石墨烯源极和所述石墨烯漏极。
  5. 根据权利要求1所述的制作方法，其中，所述金属栅极的材料为高反射率金属，所述石墨烯源极和所述石墨烯漏极的材料为还原氧化石墨烯，所述石墨烯发光层的材料为半导体还原氧化石墨烯。
  6. 根据权利要求1所述的制作方法，其中，所述下基板和所述上基板为隔水隔氧基板，其中，所述隔水隔氧基板的透水透氧率小于10-4。
  7. 一种石墨烯发光元件，其中，所述石墨烯发光元件从下到上依次包括下基板、多个金属栅极、第一绝缘保护层、石墨烯发光层、多个石墨烯源极、多个石墨烯漏极、第二绝缘保护层和上基板；
    其中，多个所述金属栅极间隔设置在所述下基板上；
    其中，所述第一绝缘保护层覆盖所述下基板和所述金属栅极；
    其中，所述石墨烯发光层设置在所述第一绝缘保护层上，所述石墨烯发光层包括间隔设置的多个石墨烯发光块；
    其中，所述石墨烯源极和所述石墨烯漏极间隔设置于所述石墨烯发光块上；
    其中，所述第二绝缘保护层覆盖所述第一绝缘保护层、所述石墨烯源极、所述石墨烯发光块和所述石墨烯漏极；
    其中，所述上基板覆盖所述第二绝缘保护层。
  8. 根据权利要求7所述的石墨烯发光元件，其中，所述金属栅极的材料为高反射率金属，所述石墨烯源极和所述石墨烯漏极的材料为还原氧化石墨烯，所述石墨烯发光层的材料为半导体还原氧化石墨烯。
  9. 根据权利要求7所述的石墨烯发光元件，其中，所述下基板和所述上基板为隔水隔氧基板，其中，所述隔水隔氧基板的透水透氧率小于10-4。
  10. 一种石墨烯液晶显示装置，其中，所述石墨烯液晶显示装置包括石墨烯发光元件，所述石墨烯发光元件从下到上依次包括下基板、多个金属栅极、 第一绝缘保护层、石墨烯发光层、多个石墨烯源极、多个石墨烯漏极、第二绝缘保护层和上基板；
    其中，多个所述金属栅极间隔设置在所述下基板上；
    其中，所述第一绝缘保护层覆盖所述下基板和所述金属栅极；
    其中，所述石墨烯发光层设置在所述第一绝缘保护层上，所述石墨烯发光层包括间隔设置的多个石墨烯发光块；
    其中，所述石墨烯源极和所述石墨烯漏极间隔设置于所述石墨烯发光块上；
    其中，所述第二绝缘保护层覆盖所述第一绝缘保护层、所述石墨烯源极、所述石墨烯发光块和所述石墨烯漏极；
    其中，所述上基板覆盖所述第二绝缘保护层。
  11. 根据权利要求10所述的石墨烯液晶显示装置，其中，所述金属栅极的材料为高反射率金属，所述石墨烯源极和所述石墨烯漏极的材料为还原氧化石墨烯，所述石墨烯发光层的材料为半导体还原氧化石墨烯。
  12. 根据权利要求10所述的石墨烯液晶显示装置，其中，所述下基板和所述上基板为隔水隔氧基板，其中，所述隔水隔氧基板的透水透氧率小于10-4。
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