CN105303985A - 石墨烯显示器及其显示驱动方法 - Google Patents
石墨烯显示器及其显示驱动方法 Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 140
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 133
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000003086 colorant Substances 0.000 claims abstract description 22
- 230000001681 protective effect Effects 0.000 claims description 10
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 10
- 238000004020 luminiscence type Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- -1 such as Substances 0.000 description 2
- 244000025254 Cannabis sativa Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
- G09G5/02—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators characterised by the way in which colour is displayed
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
- G09G5/10—Intensity circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0041—Devices characterised by their operation characterised by field-effect operation
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/20—Controlling the colour of the light
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
- G09G2300/0452—Details of colour pixel setup, e.g. pixel composed of a red, a blue and two green components
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
- G09G2300/0465—Improved aperture ratio, e.g. by size reduction of the pixel circuit, e.g. for improving the pixel density or the maximum displayable luminance or brightness
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/08—Details of timing specific for flat panels, other than clock recovery
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/06—Adjustment of display parameters
- G09G2320/0626—Adjustment of display parameters for control of overall brightness
- G09G2320/064—Adjustment of display parameters for control of overall brightness by time modulation of the brightness of the illumination source
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/06—Adjustment of display parameters
- G09G2320/0666—Adjustment of display parameters for control of colour parameters, e.g. colour temperature
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/021—Power management, e.g. power saving
- G09G2330/023—Power management, e.g. power saving using energy recovery or conservation
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2340/00—Aspects of display data processing
- G09G2340/06—Colour space transformation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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Abstract
一种石墨烯显示器,包括石墨烯显示单元以及与所述石墨烯显示单元电连接的显示控制单元。所述石墨烯显示单元包括多个石墨烯发光结构,所述石墨烯发光结构构成所述石墨显示单元的动态亚像素。所述显示控制单元用于对所述石墨烯显示单元的像素进行多基色色域划分,所述色域划分与像素色度坐标具有匹配关系,所述显示控制单元依据输入的像素色度坐标控制所述动态亚像素发出相应颜色的光。本发明还涉及一种用于驱动所述石墨烯显示器的显示驱动方法。所述石墨烯显示器及其显示驱动方法通过驱动动态像素能够以较少的像素实现多基色显示,实现所述石墨烯显示器具有更为鲜艳、广阔的色域覆盖,提高所述石墨烯显示器的开口率并降低功耗。
Description
技术领域
本发明涉及显示器领域,尤其涉及一种石墨烯显示器及其显示驱动方法。
背景技术
石墨烯材料具有质地坚硬,透明度高(穿透率≈97.7%),导热系数高(达5300W/m·K),电子迁移率高(超过15000cm2/V·s)等优良特点,近年来在显示器上的应用,逐渐增多,尤其是在触摸屏的应用(作为替代传统透明导电薄膜ITO)和在LED方面的应用。
近年来由于石墨烯发光元件,例如石墨烯二极管的出现,使石墨烯在显示领域的应用得以扩展。石墨烯发光二级管可以通过调节栅极电压改变发光颜色。其原理为,栅极电压产生的电场大小可以调节半导体还原氧化石墨烯的费米能级,从而可以调节石墨烯发光波长。当今,如何使石墨烯显示器实现更鲜艳、更广阔的色域覆盖并降低功耗,已经成为时下研究的热门课题。
发明内容
有鉴于此,有必要提供一种提升具有广阔色域覆盖能力并且低功耗的石墨烯显示器及其显示驱动方法。
一种石墨烯显示器,包括石墨烯显示单元以及与所述石墨烯显示单元电连接的显示控制单元。所述石墨烯显示单元包括多个石墨烯发光结构,所述石墨烯发光结构构成所述石墨显示单元的动态亚像素。所述显示控制单元用于对所述石墨烯显示单元的像素进行多基色色域划分,所述色域划分与像素色度坐标具有匹配关系,所述显示控制单元依据输入的像素色度坐标控制所述动态亚像素发出相应颜色的光。
进一步地,所述发光结构包括发光层、栅极、源极以及漏极,所述显示控制单元通过控制所述栅极电压控制所述动态亚像素的发光颜色。
进一步地,所述栅极覆盖所述发光层,所述源极以及所述漏极位于所述发光层背离所述栅极的一侧。
进一步地,所述发光层为半导体还原氧化石墨烯;
及/或,所述栅极为氧化石墨烯;
及/或,所述源极以及所述漏极为还原氧化石墨烯。
进一步地,所述石墨烯显示单元包括第一透明基板以及第二透明基板,所述发光结构位于所述第一透明基板及所述第二透明基板之间。
进一步地,所述石墨烯显示单元包括保护层,所述保护层覆盖所述发光结构,所述第二透明基板盖设于所述发光结构以及所述保护层上。
进一步地,所述石墨烯显示单元包括遮光层,所述遮光层形成于所述第二透明基板的朝向所述第二透明基板的一侧表面上。
进一步地,所述石墨烯显示器还包括反射层,所述反射层形成于所述第一透明基板背离所述发光结构的一侧表面上。
进一步地,所述石墨烯显示单元的每一个像素包括三个所述石墨烯发光结构作为动态像素,所述显示控制单元根据所述依据输入的像素色度坐标控制所述三个动态亚像素进行五基色显示。
进一步地,所述显示控制单元在一平面直角坐标系内,像素色域被分为WBR、WCB、WGC、WYG、WRY五个三角形区域每一个所述三角形区域具有对应的所述三个动态亚像素的显示颜色。
进一步地,所述石墨烯显示单元的每一个像素包括一个所述石墨烯发光结构作为动态像素,所述显示控制单元根据所述依据输入的像素色度坐标控制所述一个动态亚像素进行五基色显示。
进一步地,所述显示控制单元还用于对像素色域进行时序的划分,将每一个时序匹配所述石墨烯动态亚像素的对应显示颜色,并依据输入的像素色度坐标,确定三基色的颜色和显示颜色及时序。
进一步地,所述显示控制单元以180Hz时序对所述色域像素进行划分。
一种石墨显示器的显示驱动方法,包括如下步骤:
对像素进行色域划分,匹配像素色度坐标与色域划分的关系;
依据输入的RGB像素色度坐标,确定所述像素所落入的色域,并依据所述色域控制石墨烯动态亚像素显示对应颜色。
进一步地,所述石墨显示器的显示驱动方法还包括依据输入RGB像素的灰阶值,控制所述石墨烯动态亚像素的亮度。
进一步地,所述石墨显示器的显示驱动方法包括采用三个石墨烯动态亚像素进行多基色显示,包括如下步骤:
在平面直角坐标系内对像素色域进行多基色显示区域的划分,将每一个显示区域匹配所述石墨烯动态亚像素的对应显示颜色;
依据输入的像素色度坐标,判断所述像素坐标在所述像素色域的位置,并依据所述位置控制所述石墨烯动态亚像素显示对应的颜色。
进一步地,所述石墨烯显示器的显示驱动方法采用一个石墨烯动态亚像素进行多基色显示,包括如下步骤:
对像素色域进行时序划分,将每一个时序代表匹配所述石墨烯动态亚像素的对应显示颜色;
依据输入的像素色度坐标,判断所述像素色度坐标对应的时序及颜色,并依据所述位置控制所述石墨烯动态亚像素显示对应的颜色。
相对于现有技术,所述石墨烯显示器及其显示驱动方法通过驱动动态像素能够以较少的像素实现多基色显示,实现所述石墨烯显示器具有更为鲜艳、广阔的色域覆盖,提高所述石墨烯显示器的开口率并降低功耗。
附图说明
图1为本发明实施例的石墨烯显示器的示意图。
图2为图1的石墨烯显示器的显示单元的示意图。
图3为图1的石墨烯显示器的五基色色域在平面直角坐标系的分布图。
图4为图1的石墨烯显示器的五基色色域时序分布图。
图5为本发明实施例的石墨烯显示器显示驱动方法的流程图。
图6为采用三个动态亚像素实现多基色显示的流程图。
图7为采用一个动态亚像素实现多基色显示的流程图。
具体实施例
下面,将结合附图对本发明各实施例作详细介绍。
请参阅图1,本发明实施例的石墨烯显示器100包括石墨烯显示单元10以及显示控制单元20。所述显示控制单元20与所述石墨烯显示单元10之间相互电连接,所述显示控制单元20用于控制所述石墨烯显示单元10显示相应的颜色及/或亮度。
请参阅图2,所述石墨烯显示单元10包括第一透明基板11、发光结构12、保护层13、遮光层14以及第二透明基板15。所述发光结构12位于所述第一透明基板11的一侧表面,所述保护层13覆盖所述发光结构12,所述第二透明基板15盖设于所述发光结构12以及所述保护层12上,所述遮光层14形成于所述第二透明基板11的朝向所述第二透明基板15的一侧表面上。
本实施例中,所述第一透明基板11以及所述第二透明基板15均为玻璃基板,其在透光的同时还为所述石墨烯显示单元10提供支撑。可以理解,在其他的实施例中,所述第一透明基板11以及所述第二透明基板15也可以采用其他的透明材料,例如,聚对苯二甲酸乙二醇酯(polyethyleneterephthalate,PET)或者镍等,另外,所述第一透明基板11的材料可以相同,也可以不同。
所述发光结构12的数量可以依据所述石墨烯显示器100的具体需求而设置。每一个所述发光结构12包括发光层121、栅极122、源极123以及漏极124。所述栅极122覆盖所述发光层121朝向所述第二透明基板15的一侧表面,所述源极123以及所述漏极124位于所述发光层121背离所述栅极122的一侧。本实施例中,所述发光层121为半导体还原氧化石墨烯,所述栅极122为氧化石墨烯,所述源极123以及所述漏极124为还原氧化石墨烯。
实验研究证明,对于石墨烯显示器100而言,根据所述栅极122电压的不同,所述发光层121会发出不同颜色的光,例如,当所述栅极电压Vgs为0-10伏之间,源漏电压Vds大于开启电压Vth时,所述发光单元12发出的光为红光;当Vgs为20-30伏之间,源漏电压Vds大于开启电压Vth时,石墨烯发出绿光;当Vgs为40-50伏之间,源漏电压Vds>Vth时,石墨烯发出蓝光。而通过改变Vds电压的大小可以改变所述发光单元发出的光的强弱,从而可以调节灰阶。
因此,每一个所述发光单元12实际上构成一个动态像素,可以通过控制栅极电压Vds实现所述发光单元12发光颜色的调整,而且每一个所述发光单元12不仅能够发出红绿蓝(RGB)三基色光,而且可以发出红绿蓝黄青(RGBYC)五基色甚至更多的颜色。因此,能够实现更鲜艳更广阔的色域覆盖,提高显示显示器开口率、显示器开口率,降低显示功耗。
具体地,可以采用三个所述发光单元12组成所述石墨烯显示单元20的一个像素,每一个所述发光单元12即为所述像素的一个动态亚像素。
为实现更多基色显示,需对像素色域进行划分,可以依据输入信号灰阶值以及像素色度坐标输出对应的灰阶及颜色。具体地,以五基色显示为例,请参阅图3,所示为5基色像素色域划分示意图,在一平面直角坐标系内,像素色域被分为WBR、WCB、WGC、WYG、WRY五个三角形区域,所述三角形区域与所述动态亚像素的显示颜色具有预设的匹配关系,每一个所述三角形区域具有对应的所述动态亚像素的显示颜色。
因此,依据输入的像素色度坐标A(x,y),能够确定像素在像素色域中的位置,而依据像素在像素色域中的位置,即可确定三个动态亚像素的显示颜色,请参阅表1,为所述像素色度坐标A(x,y)的不同位置与所述动态亚像素的发光颜色的对应关系。
表1
此外,可以根据输入的RGB像素的灰阶值RiGiBi调整所述动态亚像素12的灰阶,其中,i的值为0-255之间,代表灰阶。
采用以上方式,即可利用三个动态亚像素实现RGBYC5基色的超宽色域显示,使得显示具有高色彩饱和度,同时降低了亚像素的数量,因此能够提升显示器的开口率。
此外,可以仅采用一个发光单元12组成所述石墨烯显示单元20的一个像素,即每所述石墨烯显示单元20的每一个像素只有一个动态亚像素。依据时序驱动方式,同样可以实现多基色全彩广色域显示的目的。
具体地,以RGBYC5基色180HZ时序驱动为例,首先对像素色域进行时序的划分,将每一个时序匹配所述石墨烯动态亚像素的对应显示颜色。依据输入的像素色度坐标A(x,y),确定三基色的颜色和显示颜色及时序,依据显示颜色及时序可以调整对应栅极电压Vgs以及源漏电压Vds即可实现时序多基色全彩驱动。
请参阅图4,为单动态亚像素的时序驱动的示意图,图中将每秒按时序分割180等分,在每一个分割的时序内依据对应显示颜色调整栅极电压Vgs以及源漏电压Vds,三个相邻时序显示的颜色构成三基色,例如,在1/180秒时,依据该时序的输入控制栅极电压Vgs为以及源漏电压Vds以预定灰阶显示第一颜色,在2/180秒时,依据该时序的输入控制栅极电压Vgs为以及源漏电压Vds以预定灰阶显示第二颜色,在3/180秒时,依据该时序的输入控制栅极电压Vgs为以及源漏电压Vds以预定灰阶显示第三颜色,此三个时序的光在视觉上可以混合形成预定颜色的光,因此,时序驱动方式实现了一个像素中依靠单动态亚像素显示多基色全彩广色域显示的目的。此种显示器驱动方式,能够进一步减少石墨烯显示单元中像素的数量,提升开口率,并降低显示功耗。
请再参阅图2,所述保护层13用于保护所述发光结构12,防止水、气及其他杂质入侵对所述发光结构12造成损坏。本实施例中,所述发光结构13的材料为二氧化硅(SiO2)。
所述遮光层14用于背景光泄漏,以提高显示对比度,防止混色和增加颜色的纯度。所述遮光层14为形成于发光结构13之间的不透光部分,对应于发光结构13,所述遮光层14具有贯穿的透光窗141,使得所述遮光层14的分布呈矩阵状,因此,所述遮光层14又称为黑色矩阵层。可选地,所述遮光层14为沉积于所述第二透明基板15表面上的铬材料层,具体地,所述首先在所述第二透明基板15上溅射形成铬层,然后采用光刻法蚀刻形成所述透光窗141。此外,也可以采用含有黑色染料的树脂光刻胶,用光刻法形成所述遮光层14。
所述石墨烯显示器100还包括反射层16,所述反射层16形成于所述第一透明基板11背离所述发光结构13的一侧表面上。所述反射层16能够反射所述发光结构13的光,提高光线的利用率。优选地,所述反射层16采用高反射率金属材料制成。
所述显示控制单元20用于依据输入RGB像素的灰阶值以及像素色度坐标控制所述石墨烯显示单元10的动态亚像素进行相应的显示。
以三个动态亚像素实现五基色显示为例,所述显示控制单元20首先需对像素色域进行划分,将像素色域划分为五个三角形区域,并匹配对应的像素色度坐标和显示颜色的关系;具体地,在平面直角坐标系内,所述像素色域被划分成WBR、WCB、WGC、WYG、WRY五个三角形区域,如前述表1,每一个三角形区域对应动态像素所显示的颜色,所述像素色度坐标被标记为A(x,y),所述像素色度坐标落入对应的像素色域时,所述显示控制单元20即控制所述动态亚像素以对应的颜色显示,进而实现三个动态亚像素进行五基色显示。此外,所述显示控制单元20依据输入像素灰阶值RiGiBi控制所述亚像素的亮度。
对于一个动态亚像素实现五基色显示的情况,所述显示控制单元20首先对像素色域进行时序的划分,将每一个时序匹配所述石墨烯动态亚像素的对应显示颜色,所述显示控制单元20依据输入的RGB像素灰阶值RiGiBi以及像素色度坐标A(x,y)进行彩色转换并确定显示的颜色及时序,选择时序对应的漏源电压Vds及栅极电压Vgs进行颜色及亮度显示。
所述石墨烯显示器100通过驱动动态像素能够以较少的像素实现多基色显示,实现所述石墨烯显示器100具有更为鲜艳、广阔的色域覆盖,提高所述石墨烯显示器100的开口率并降低功耗。
请参阅图5,为本发明实施例的石墨烯显示器的显示驱动方法的流程图。所述显示驱动方法包括图下步骤:
步骤S501,对像素进行色域划分,匹配像素色度坐标与色域划分的关系;
步骤S502,依据输入的RGB像素色度坐标,确定所述像素所落入的色域,并依据所述色域控制石墨烯动态亚像素显示对应颜色。此步骤中,还依据输入RGB像素的灰阶值,控制所述石墨烯动态亚像素的亮度。
更具体地,所述石墨烯显示器的显示驱动方法具体包括采用三个石墨烯动态亚像素进行多基色显示以及采用一个石墨烯动态亚像素进行多基色显示。
请参阅图6,所示为具体地采用三个石墨烯动态亚像素进行多基色显示的流程图,其包括如下步骤:
步骤S601,在平面直角坐标系内对像素色域进行多基色显示区域的划分,将每一个显示区域匹配所述石墨烯动态亚像素的对应显示颜色。
具体地,在一平面直角坐标系内,像素色域被分为WBR、WCB、WGC、WYG、WRY五个三角形区域,所述三角形区域与所述动态亚像素的显示颜色具有预设的匹配关系,每一个所述三角形区域具有对应的所述动态亚像素的显示颜色。
步骤S602,依据输入的像素色度坐标A(x,y),判断所述像素坐标在所述像素色域的位置,并依据所述位置控制所述石墨烯动态亚像素显示对应的颜色。
采用以上方式,即可利用三个动态亚像素实现5基色的超宽色域显示,使得显示具有高色彩饱和度,同时降低了亚像素的数量,因此能够提升显示器的开口率。
请参阅图7,所示为采用一个石墨烯动态亚像素进行多基色显示的流程图,其包括如下步骤:
步骤S701,对像素色域进行时序划分,将每一个时序代表匹配所述石墨烯动态亚像素的对应显示颜色。
以180Hz时序驱动为例,将每秒按时序分割180等分,在每一个分割的时序内依据对应显示颜色调整栅极电压Vgs以及源漏电压Vds,三个相邻时序显示的颜色构成三基色,例如,在1/180秒时,依据该时序的输入控制栅极电压Vgs为以及源漏电压Vds以预定灰阶显示第一颜色,在2/180秒时,依据该时序的输入控制栅极电压Vgs为以及源漏电压Vds以预定灰阶显示第二颜色,在3/180秒时,依据该时序的输入控制栅极电压Vgs为以及源漏电压Vds以预定灰阶显示第三颜色,此三个时序的光在视觉上可以混合形成预定颜色的光。
步骤S702,依据输入的像素色度坐标,判断所述像素色度坐标对应的时序及颜色,并依据所述位置控制所述石墨烯动态亚像素显示对应的颜色。
依据时序驱动方式,同样可以实现多基色全彩广色域显示的目的。
显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。
Claims (10)
1.一种石墨烯显示器,包括石墨烯显示单元以及与所述石墨烯显示单元电连接的显示控制单元,所述石墨烯显示单元包括多个石墨烯发光结构,所述石墨烯发光结构构成所述石墨显示单元的动态亚像素,其特征在于:所述显示控制单元用于对所述石墨烯显示单元的像素进行多基色色域划分,所述色域划分与像素色度坐标具有匹配关系,所述显示控制单元依据输入的像素色度坐标控制所述动态亚像素发出相应颜色的光。
2.如权利要求1所述的石墨烯显示器,其特征在于:所述发光结构包括发光层、栅极、源极以及漏极,所述显示控制单元通过控制所述栅极电压控制所述动态亚像素的发光颜色。
3.如权利要求2所述的石墨烯显示器,其特征在于:所述栅极覆盖所述发光层,所述源极以及所述漏极位于所述发光层背离所述栅极的一侧。
4.如权利要求2所述的石墨烯显示器,其特征在于:所述发光层为半导体还原氧化石墨烯;
及/或,所述栅极为氧化石墨烯;
及/或,所述源极以及所述漏极为还原氧化石墨烯。
5.如权利要求2-4任一项所述的石墨烯显示器,其特征在于:所述石墨烯显示单元包括第一透明基板以及第二透明基板,所述发光结构位于所述第一透明基板及所述第二透明基板之间。
6.如权利要求5所述的石墨烯显示器,其特征在于:所述石墨烯显示单元包括保护层,所述保护层覆盖所述发光结构,所述第二透明基板盖设于所述发光结构以及所述保护层上;
及/或,所述石墨烯显示单元包括遮光层,所述遮光层形成于所述第二透明基板的朝向所述第二透明基板的一侧表面上;
及/或,所述石墨烯显示单元包括反射层,所述反射层形成于所述第一透明基板背离所述发光结构的一侧表面上。
7.如权利要求1所述的石墨烯显示器,其特征在于:所述石墨烯显示单元的每一个像素包括三个所述石墨烯发光结构作为动态像素,所述显示控制单元根据所述依据输入的像素色度坐标控制所述三个动态亚像素进行五基色显示;
或者,所述石墨烯显示单元的每一个像素包括一个所述石墨烯发光结构作为动态像素,所述显示控制单元根据所述依据输入的像素色度坐标控制所述一个动态亚像素进行五基色显示。
8.如权利要求9所述的石墨烯显示器,其特征在于:当所述石墨烯显示单元的每一个像素包括三个所述石墨烯发光结构作为动态像素时,所述显示控制单元在一平面直角坐标系内,像素色域被分为WBR、WCB、WGC、WYG、WRY五个三角形区域每一个所述三角形区域具有对应的所述三个动态亚像素的显示颜色;当所述石墨烯显示单元的每一个像素包括一个所述石墨烯发光结构作为动态像素时,所述显示控制单元用于对像素色域进行时序的划分,将每一个时序匹配所述石墨烯动态亚像素的对应显示颜色,并依据输入的像素色度坐标,确定三基色的颜色和显示颜色及时序。
9.一种石墨显示器的显示驱动方法,包括如下步骤:
对像素进行色域划分,匹配像素色度坐标与色域划分的关系;
依据输入的RGB像素色度坐标,确定所述像素所落入的色域,并依据所述色域控制石墨烯动态亚像素显示对应颜色。
10.如权利要求9所述的石墨显示器的显示驱动方法,其特征在于:包括采用三个石墨烯动态亚像素进行多基色显示,包括如下步骤:
在平面直角坐标系内对像素色域进行多基色显示区域的划分,将每一个显示区域匹配所述石墨烯动态亚像素的对应显示颜色,
依据输入的像素色度坐标,判断所述像素坐标在所述像素色域的位置,并依据所述位置控制所述石墨烯动态亚像素显示对应的颜色;
或者,采用一个石墨烯动态亚像素进行多基色显示,包括如下步骤:
对像素色域进行时序划分,将每一个时序代表匹配所述石墨烯动态亚像素的对应显示颜色;
依据输入的像素色度坐标,判断所述像素色度坐标对应的时序及颜色,并依据所述位置控制所述石墨烯动态亚像素显示对应的颜色。
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WO2017088284A1 (zh) | 2017-06-01 |
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