WO2018149024A1 - 石墨烯发光晶体管及其制作方法、主动石墨烯发光显示器 - Google Patents

石墨烯发光晶体管及其制作方法、主动石墨烯发光显示器 Download PDF

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WO2018149024A1
WO2018149024A1 PCT/CN2017/078970 CN2017078970W WO2018149024A1 WO 2018149024 A1 WO2018149024 A1 WO 2018149024A1 CN 2017078970 W CN2017078970 W CN 2017078970W WO 2018149024 A1 WO2018149024 A1 WO 2018149024A1
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graphene
light
gate
predetermined voltage
emitting transistor
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PCT/CN2017/078970
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English (en)
French (fr)
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樊勇
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深圳市华星光电技术有限公司
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Priority to US15/523,371 priority Critical patent/US10580930B2/en
Publication of WO2018149024A1 publication Critical patent/WO2018149024A1/zh

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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0041—Devices characterised by their operation characterised by field-effect operation
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    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
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Definitions

  • the present invention belongs to the field of display technologies, and in particular, to a graphene light-emitting transistor, a method for fabricating the same, and an active graphene light-emitting display.
  • Graphene has excellent characteristics such as hard texture, high transparency (the penetration rate is about 97.7%), high thermal conductivity (up to 5300 W/m ⁇ K), and high electron mobility (more than 15000 cm 2 /V ⁇ s).
  • it has been gradually applied to displays, especially on touch screens (which are commonly used as an alternative to conventional transparent indium tin oxide (ITO) conductive films) and in the application of light-emitting diodes (LEDs).
  • the present invention applies graphene to a transistor to construct a graphene light-emitting transistor, and realizes an active graphene light-emitting display using the constructed graphene light-emitting transistor.
  • a graphene light emitting transistor including: a gate electrode on a substrate; a gate insulating layer on the substrate and the gate; and a gate insulating layer on the gate insulating layer a source and a drain, the source and the drain being made of graphene; a graphene oxide layer on the gate insulating layer between the source and the drain; a source, a drain, and a graphene quantum dot layer on the graphene oxide layer; and a water blocking oxygen barrier layer on the graphene quantum dot layer.
  • the graphene light emitting transistor further includes: a protective layer on the water blocking oxygen barrier layer.
  • the color of the light emitted by the graphene light emitting transistor is controlled by controlling the magnitude of the voltage supplied to the gate.
  • a method of fabricating a graphene light-emitting transistor comprising: fabricating a gate on a substrate; forming a gate insulating layer on the substrate and the gate; Forming a graphene oxide layer on the gate insulating layer; respectively reducing both ends of the graphene oxide layer to form a source and a drain made of graphene; in the unreduced graphene oxide layer, the A graphene quantum dot layer is formed on the source and the drain; and a water blocking oxygen barrier layer is formed on the graphene quantum dot layer.
  • the manufacturing method further includes: forming a protective layer on the water blocking and oxygen barrier layer.
  • an active graphene light emitting display includes: a gate line, a data line, a color control voltage line, a power supply voltage line, a driving thin film transistor, a switching thin film transistor, and a graphene light emitting transistor.
  • the graphene light-emitting transistor is the above-described graphene light-emitting transistor or the graphene light-emitting transistor is a graphene light-emitting transistor fabricated by the above-described fabrication method; the gate line and the data line are mutually connected Insulating and intersecting; the color control voltage line is parallel to the gate line and used to transmit a color control voltage; a gate and a source of the driving thin film transistor are respectively connected to the gate line and the data line, a drain of the driving thin film transistor is connected to a gate of the switching thin film transistor; a source of the switching thin film transistor is connected to the power supply voltage line, and a drain of the switching thin film transistor is connected to the graphene light emitting a source of the transistor; a gate of the graphene light-emitting transistor is connected to the color control voltage line, The drain is electrically grounded emission graphene transistor; end of the storage capacitor is connected to the gate of the switching thin film transistor, the other terminal of the storage
  • the graphene light emitting transistor when the color control voltage is between the first predetermined voltage and the second predetermined voltage, the graphene light emitting transistor emits red light; when the color control voltage is between the third predetermined voltage and the fourth The graphene light emitting transistor emits green light when the voltage is between predetermined wavelengths; when the color control voltage is between the fifth predetermined voltage and the sixth predetermined voltage, the graphene light emitting transistor emits blue light; The first predetermined voltage to the sixth predetermined voltage are sequentially increased.
  • the present invention constructs a graphene light-emitting transistor, and realizes an active graphene light-emitting display using the graphene light-emitting transistor.
  • FIG. 1 is a schematic structural view of a graphene light emitting transistor according to an embodiment of the present invention
  • FIGS. 2A through 2H are flowcharts showing the fabrication of a graphene light emitting transistor according to an embodiment of the present invention.
  • FIG. 3 is a circuit diagram of a pixel of an active graphene light emitting display, in accordance with an embodiment of the present invention.
  • FIG. 1 is a schematic structural view of a graphene light emitting transistor according to an embodiment of the present invention.
  • a graphene light emitting transistor includes a substrate 10, a gate electrode 20, a gate insulating layer 30, a source electrode 40, a drain electrode 50, a graphene oxide layer 60, and a graphene quantum dot layer 70. , water blocking oxygen barrier layer 80.
  • the substrate 10 can be, for example, a transparent glass substrate or a transparent resin substrate.
  • the gate electrode 20 is formed on the substrate 10.
  • the gate 20 should have a higher reflectivity.
  • the gate electrode 20 has a reflectance of not less than 80%.
  • the gate electrode 20 may be a composite metal layer (such as a molybdenum aluminum alloy, an aluminum silver alloy, a copper molybdenum aluminum alloy, etc.), but the invention is not limited thereto.
  • the source 40 and the drain 50 are spaced apart from each other on the gate insulating layer 30.
  • the source 40 and the drain 50 are made of graphene. Further, graphene can be formed by reducing graphene oxide to form source 40 and drain 50.
  • the graphene oxide layer 60 is disposed on the gate insulating layer 30 and between the source 40 and the drain 50. Further, the graphene oxide layer 60 is in contact with both the source 40 and the drain 50.
  • a graphene quantum dot layer 70 is disposed on the graphene oxide layer 60, the source 40, and the drain 50.
  • a water blocking oxygen barrier layer 80 is disposed on the graphene quantum dot layer 70 for preventing water oxygen in the environment from entering the device.
  • the graphene light emitting transistor may further include: a protective layer 90.
  • the protective layer 90 is disposed on the water blocking oxygen barrier layer 80 for protecting the water blocking oxygen barrier layer 80.
  • the color of the light emitted from the graphene light-emitting transistor according to the embodiment of the present invention is controlled by controlling the magnitude of the voltage supplied to the gate electrode 20. The details will be described below.
  • FIGS. 2A through 2H are flowcharts showing the fabrication of a graphene light emitting transistor in accordance with an embodiment of the present invention.
  • the substrate 10 can be, for example, a transparent glass substrate or a transparent resin substrate.
  • a gate electrode 20 is formed on the substrate 10.
  • the gate 20 should have a higher reflectivity.
  • the gate electrode 20 has a reflectance of not less than 80%.
  • the gate electrode 20 may be a composite metal layer (such as a molybdenum aluminum alloy, an aluminum silver alloy, a copper molybdenum aluminum alloy, etc.), but the invention is not limited thereto.
  • a gate insulating layer 30 covering the gate electrode 20 is formed on the substrate 10.
  • the gate insulating layer 30 may be formed of, for example, an insulating material such as silicon oxide, silicon nitride, or the like.
  • a graphene oxide layer 60 is formed on the gate insulating layer 30.
  • a water-blocking oxygen barrier layer 80 is formed on the graphene quantum dot layer 70 for preventing water oxygen in the environment from entering the device.
  • the method of fabricating the graphene light-emitting transistor according to the embodiment of the present invention may also include the steps shown in FIG. 2H.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

提供一种石墨烯发光晶体管，包括：在基板（10）上的栅极（20）；在基板和栅极上的栅极绝缘层（30）；在栅极绝缘层上的源极（40）和漏极（50），源极和漏极采用石墨烯制成；在栅极绝缘层上且位于源极和漏极之间的氧化石墨烯层（60）；在源极、漏极和氧化石墨烯层上的石墨烯量子点层（70）；以及在石墨烯量子点层上的阻水阻氧层（80）。还提供了一种该石墨烯发光晶体管的制作方法以及具有该石墨烯发光晶体管的主动石墨烯发光显示器。构造了一种石墨烯发光晶体管，并利用该石墨烯发光晶体管实现了主动石墨烯发光显示器。

Description

石墨烯发光晶体管及其制作方法、主动石墨烯发光显示器 技术领域
本发明属于显示技术领域，具体地讲，涉及一种石墨烯发光晶体管及其制作方法、主动石墨烯发光显示器。
背景技术
石墨烯因其具有质地坚硬、透明度高(其穿透率约为97.7％)、导热系数高(达5300W/m·K)、电子迁移率高(超过15000cm2/V·s)等优良特点，近年来逐渐被应用于显示器上，尤其是在触摸屏上的应用(其通常作为替代传统透明的氧化铟锡(ITO)导电薄膜)和在发光二极管(LED)方面的应用。
发明内容
本发明将石墨烯应用于晶体管中，以构造出石墨烯发光晶体管，并且利用构造出的石墨烯发光晶体管实现主动石墨烯发光显示器。
根据本发明的一方面，提供了一种石墨烯发光晶体管，其包括：在基板上的栅极；在所述基板和所述栅极上的栅极绝缘层；在所述栅极绝缘层上的源极和漏极，所述源极和所述漏极采用石墨烯制成；在所述栅极绝缘层上且位于所述源极和所述漏极之间的氧化石墨烯层；在所述源极、所述漏极和所述氧化石墨烯层上的石墨烯量子点层；以及在所述石墨烯量子点层上的阻水阻氧层。
可选地，所述石墨烯发光晶体管还包括：在所述阻水阻氧层上的保护层。
可选地，所述栅极为复合金属层结构，且所述栅极的反射率不低于80％。
可选地，通过控制提供给所述栅极的电压的大小，以控制所述石墨烯发光晶体管发出光线的颜色。
根据本发明的另一方面，还提供了一种石墨烯发光晶体管的制作方法，其包括：在基板上制作栅极；在所述基板和所述栅极上制作栅极绝缘层；在所述 栅极绝缘层上制作氧化石墨烯层；对所述氧化石墨烯层的两端分别进行还原，以形成由石墨烯制作的源极和漏极；在未被还原的氧化石墨烯层、所述源极和所述漏极上制作石墨烯量子点层；在所述石墨烯量子点层上制作阻水阻氧层。
可选地，所述制作方法还包括：在所述阻水阻氧层上制作保护层。
根据本发明的又一方面，又提供了一种主动石墨烯发光显示器，其包括：栅极线、数据线、色彩控制电压线、电源电压线、驱动薄膜晶体管、开关薄膜晶体管、石墨烯发光晶体管以及存储电容器，所述石墨烯发光晶体管为上述的石墨烯发光晶体管或者所述石墨烯发光晶体管为采用上述的制作方法制作而成的石墨烯发光晶体管；所述栅极线和所述数据线彼此绝缘且交叉设置；所述色彩控制电压线与所述栅极线并行并用于传送色彩控制电压；所述驱动薄膜晶体管的栅极和源极分别连接到所述栅极线和所述数据线，所述驱动薄膜晶体管的漏极连接到所述开关薄膜晶体管的栅极；所述开关薄膜晶体管的源极连接到所述电源电压线，所述开关薄膜晶体管的漏极连接到所述石墨烯发光晶体管的源极；所述石墨烯发光晶体管的栅极连接到所述色彩控制电压线，所述石墨烯发光晶体管的漏极电性接地；所述存储电容器的一端连接到所述开关薄膜晶体管的栅极，所述存储电容器的另一端连接到所述电源电压线。
可选地，通过控制所述色彩控制电压线传送的色彩控制电压的大小，以控制所述石墨烯发光晶体管发出光线的颜色。
可选地，当所述色彩控制电压介于第一预定电压和第二预定电压之间时，所述石墨烯发光晶体管发出红色光线；当所述色彩控制电压介于第三预定电压和第四预定电压之间时，所述石墨烯发光晶体管发出绿色光线；当所述色彩控制电压介于第五预定电压和第六预定电压之间时，所述石墨烯发光晶体管发出蓝色光线；其中，所述第一预定电压至所述第六预定电压依次增大。
本发明的有益效果：本发明构造了一种石墨烯发光晶体管，并利用该石墨烯发光晶体管实现了主动石墨烯发光显示器。
附图说明
通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：
图1是根据本发明的实施例的石墨烯发光晶体管的结构示意图；
图2A至图2H是根据本发明的实施例的石墨烯发光晶体管的制作流程图；
图3是根据本发明的实施例的主动石墨烯发光显示器的像素的电路图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
在附图中，为了清楚器件，夸大了层和区域的厚度。相同的标号在整个说明书和附图中表示相同的元器件。
图1是根据本发明的实施例的石墨烯发光晶体管的结构示意图。
参照图1，根据本发明的实施例的石墨烯发光晶体管包括：基板10、栅极20、栅极绝缘层30、源极40、漏极50、氧化石墨烯层60、石墨烯量子点层70、阻水阻氧层80。
基板10可例如是透明的玻璃基板或者透明的树脂基板。
栅极20形成在基板10上。栅极20应当具有较高的反射率。优选地，在本实施例中，栅极20具有的反射率不低于80％。作为一种实施方式，栅极20可采用复合金属层(诸如钼铝合金、铝银合金、铜钼铝合金等)，但本发明并不限制于此。
栅极绝缘层30设置在基板10上，并覆盖栅极20。栅极绝缘层30可例如由绝缘材料(诸如氧化硅、氮化硅等)形成。
源极40和漏极50间隔设置在栅极绝缘层30上。在本实施例中，源极40和漏极50由石墨烯制成。进一步地，可通过还原氧化石墨烯形成石墨烯，从而形成源极40和漏极50。
氧化石墨烯层60设置在栅极绝缘层30上并位于源极40和漏极50之间。进一步地，氧化石墨烯层60与源极40和漏极50都接触。
石墨烯量子点层70设置在氧化石墨烯层60、源极40和漏极50上。阻水阻氧层80设置在石墨烯量子点层70上，用于防止环境中的水氧进入器件中。
进一步地，根据本发明的实施例的石墨烯发光晶体管还可以包括：保护层90。保护层90设置在阻水阻氧层80，用于对阻水阻氧层80进行保护。
在本实施例中，通过控制提供给栅极20的电压的大小，以控制根据本发明的实施例的石墨烯发光晶体管发出光线的颜色。具体将在下面描述。
以下对根据本发明的实施例的石墨烯发光晶体管的制作方法进行描述。图2A至图2H是根据本发明的实施例的石墨烯发光晶体管的制作流程图。
参照图2A，提供一基板10。基板10可例如是透明的玻璃基板或者透明的树脂基板。
参照图2B，在基板10上制作形成栅极20。栅极20应当具有较高的反射率。优选地，在本实施例中，栅极20具有的反射率不低于80％。作为一种实施方式，栅极20可采用复合金属层(诸如钼铝合金、铝银合金、铜钼铝合金等)，但本发明并不限制于此。
参照图2C，在基板10上制作覆盖栅极20的栅极绝缘层30。栅极绝缘层30可例如由绝缘材料(诸如氧化硅、氮化硅等)形成。
参照图2D，在栅极绝缘层30上制作氧化石墨烯层60。
参照图2E，对氧化石墨烯层60的两端分别进行还原，以形成由石墨烯制成的源极40和漏极50。
参照图2F，在未被还原的氧化石墨烯层60、源极40和漏极50上制作石墨烯量子点层70。
参照图2G，在石墨烯量子点层70上制作形成阻水阻氧层80，该阻水阻氧层80用于防止环境中的水氧进入器件中。
参照图2H，在阻水阻氧层80上制作形成保护层90，该保护层90用于对阻水阻氧层80进行保护。
应当理解的是，在本发明的另一实施方式中，根据本发明的实施例的石墨烯发光晶体管的制作方法不包括图2H所示的步骤也可以。
以下将对采用本实施例的石墨烯发光晶体管的主动石墨烯发光显示器进行详细描述。图3是根据本发明的实施例的主动石墨烯发光显示器的像素的电路图。在图3中，仅示出了一个像素，然而应当理解的是，主动石墨烯发光显示器中的其他像素与图3示出的像素相同。
参照图3，根据本发明的实施例的主动石墨烯发光显示器包括：栅极线100、数据线200、色彩控制电压线300、电源电压线400、驱动薄膜晶体管500、开关薄膜晶体管600、石墨烯发光晶体管700以及存储电容器800；其中，石墨烯发光晶体管700为图1所示的石墨烯发光晶体管，或者石墨烯发光晶体管700为采用图2A至图2H所示的制作方法制作而成的石墨烯发光晶体管。
具体而言，栅极线100和数据线200彼此绝缘且交叉设置；色彩控制电压线300与栅极线100并行并用于传送色彩控制电压；驱动薄膜晶体管500的栅极和源极分别连接到栅极线100和数据线200，驱动薄膜晶体管500的漏极连接到开关薄膜晶体管600的栅极；开关薄膜晶体管600的源极连接到电源电压线400，开关薄膜晶体管600的漏极连接到石墨烯发光晶体管700的源极；石墨烯发光晶体管700的栅极连接到色彩控制电压线300，石墨烯发光晶体管700的漏极电性接地；存储电容器800的一端连接到开关薄膜晶体管600的栅极，存储电容器800的另一端连接到电源电压线400。这里，电源电压线400用于提供正电压。
进一步地，通过控制色彩控制电压线300传送的色彩控制电压的大小，以控制石墨烯发光晶体管700发出光线的颜色。具体地，当所述色彩控制电压介于第一预定电压和第二预定电压之间时，石墨烯发光晶体管700发出红色光线；当所述色彩控制电压介于第三预定电压和第四预定电压之间时，石墨烯发光晶体管700发出绿色光线；当所述色彩控制电压介于第五预定电压和第六预定电压之间时，石墨烯发光晶体管700发出蓝色光线；其中，所述第一预定电压至所述第六预定电压依次增大。
作为本发明的一实施方式，第一预定电压可以为0V，第二预定电压可以为12V，第三预定电压可以为20V，第四预定电压可以为35V，第五预定电压可以为40V，第六预定电压可以为50V，但本发明并不限制于此。需要说明的是，“介于”可以包含边界值也可以不包含边界值，例如当某一预定电压是0V时，“介于”不包含0V。
综上所述，根据本发明的实施例，构造了一种石墨烯发光晶体管，并利用该石墨烯发光晶体管实现了主动石墨烯发光显示器。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (16)

  1. 一种石墨烯发光晶体管，其中，包括：
    在基板上的栅极；
    在所述基板和所述栅极上的栅极绝缘层；
    在所述栅极绝缘层上的源极和漏极，所述源极和所述漏极采用石墨烯制成；
    在所述栅极绝缘层上且位于所述源极和所述漏极之间的氧化石墨烯层；
    在所述源极、所述漏极和所述氧化石墨烯层上的石墨烯量子点层；以及
    在所述石墨烯量子点层上的阻水阻氧层。
  2. 根据权利要求1所述的石墨烯发光晶体管，其中，还包括：在所述阻水阻氧层上的保护层。
  3. 根据权利要求1所述的石墨烯发光晶体管，其中，所述栅极为复合金属层结构，且所述栅极的反射率不低于80％。
  4. 根据权利要求1所述的石墨烯发光晶体管，其中，通过控制提供给所述栅极的电压的大小，以控制所述石墨烯发光晶体管发出光线的颜色。
  5. 一种石墨烯发光晶体管的制作方法，其中，包括：
    在基板上制作栅极；
    在所述基板和所述栅极上制作栅极绝缘层；
    在所述栅极绝缘层上制作氧化石墨烯层；
    对所述氧化石墨烯层的两端分别进行还原，以形成由石墨烯制作的源极和漏极；
    在未被还原的氧化石墨烯层、所述源极和所述漏极上制作石墨烯量子点层；
    在所述石墨烯量子点层上制作阻水阻氧层。
  6. 根据权利要求5所述的制作方法，其中，还包括：
    在所述阻水阻氧层上制作保护层。
  7. 根据权利要求5所述的制作方法，其中，所述栅极为复合金属层结构，且所述栅极的反射率不低于80％。
  8. 一种主动石墨烯发光显示器，其中，包括：栅极线、数据线、色彩控制电压线、电源电压线、驱动薄膜晶体管、开关薄膜晶体管、石墨烯发光晶体管以及存储电容器，所述石墨烯发光晶体管包括：在基板上的栅极；在所述基板和所述栅极上的栅极绝缘层；在所述栅极绝缘层上的源极和漏极，所述源极和所述漏极采用石墨烯制成；在所述栅极绝缘层上且位于所述源极和所述漏极之间的氧化石墨烯层；在所述源极、所述漏极和所述氧化石墨烯层上的石墨烯量子点层；以及在所述石墨烯量子点层上的阻水阻氧层；
    所述栅极线和所述数据线彼此绝缘且交叉设置；所述色彩控制电压线与所述栅极线并行并用于传送色彩控制电压；所述驱动薄膜晶体管的栅极和源极分别连接到所述栅极线和所述数据线，所述驱动薄膜晶体管的漏极连接到所述开关薄膜晶体管的栅极；所述开关薄膜晶体管的源极连接到所述电源电压线，所述开关薄膜晶体管的漏极连接到所述石墨烯发光晶体管的源极；所述石墨烯发光晶体管的栅极连接到所述色彩控制电压线，所述石墨烯发光晶体管的漏极电性接地；所述存储电容器的一端连接到所述开关薄膜晶体管的栅极，所述存储电容器的另一端连接到所述电源电压线。
  9. 根据权利要求8所述的主动石墨烯发光显示器，其中，所述石墨烯发光晶体管还包括：在所述阻水阻氧层上的保护层。
  10. 根据权利要求8所述的石墨烯发光晶体管，其中，所述栅极为复合金属层结构，且所述栅极的反射率不低于80％。
  11. 根据权利要求8所述的主动石墨烯发光显示器，其中，通过控制所述色彩控制电压线传送的色彩控制电压的大小，以控制所述石墨烯发光晶体管发出光线的颜色。
  12. 根据权利要求9所述的主动石墨烯发光显示器，其中，通过控制所述色彩控制电压线传送的色彩控制电压的大小，以控制所述石墨烯发光晶体管发出光线的颜色。
  13. 根据权利要求10所述的主动石墨烯发光显示器，其中，通过控制所述色彩控制电压线传送的色彩控制电压的大小，以控制所述石墨烯发光晶体管发出光线的颜色。
  14. 根据权利要求11所述的主动石墨烯发光显示器，其中，当所述色彩控制电压介于第一预定电压和第二预定电压之间时，所述石墨烯发光晶体管发出红色光线；当所述色彩控制电压介于第三预定电压和第四预定电压之间时，所述石墨烯发光晶体管发出绿色光线；当所述色彩控制电压介于第五预定电压和第六预定电压之间时，所述石墨烯发光晶体管发出蓝色光线；其中，所述第一预定电压至所述第六预定电压依次增大。
  15. 根据权利要求12所述的主动石墨烯发光显示器，其中，当所述色彩控制电压介于第一预定电压和第二预定电压之间时，所述石墨烯发光晶体管发出红色光线；当所述色彩控制电压介于第三预定电压和第四预定电压之间时，所述石墨烯发光晶体管发出绿色光线；当所述色彩控制电压介于第五预定电压和第六预定电压之间时，所述石墨烯发光晶体管发出蓝色光线；其中，所述第一预定电压至所述第六预定电压依次增大。
  16. 根据权利要求13所述的主动石墨烯发光显示器，其中，当所述色彩控制电压介于第一预定电压和第二预定电压之间时，所述石墨烯发光晶体管发出红色光线；当所述色彩控制电压介于第三预定电压和第四预定电压之间时，所述石墨烯发光晶体管发出绿色光线；当所述色彩控制电压介于第五预定电压和第六预定电压之间时，所述石墨烯发光晶体管发出蓝色光线；其中，所述第一预定电压至所述第六预定电压依次增大。
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