CN106960896B - 一种光掩膜版以及石墨烯发光显示器件的制备方法 - Google Patents
一种光掩膜版以及石墨烯发光显示器件的制备方法 Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 129
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 126
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 239000002096 quantum dot Substances 0.000 claims abstract description 31
- 239000010408 film Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 230000004888 barrier function Effects 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 229910000838 Al alloy Inorganic materials 0.000 claims description 9
- -1 aluminium silver Chemical compound 0.000 claims description 6
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 239000006185 dispersion Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000004411 aluminium Substances 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 239000007772 electrode material Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 abstract description 2
- 229920001621 AMOLED Polymers 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 150000001336 alkenes Chemical class 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
本发明涉及显示技术领域,尤其是一种石墨烯发光显示器的制备方法,包括如下步骤:在形成有薄膜晶体管的基板表面,制备氧化石墨烯薄膜;提供一光掩膜版与所述氧化石墨烯薄膜对应,使光通过所述光掩膜版辐射到所述氧化石墨烯薄膜上,形成石墨烯发光晶体管的源极、漏极和石墨烯量子点层;其中,所述光掩膜版包括:全透明部,其对应于所述源极、漏极所在区域;遮光部,其对应于所述薄膜晶体管所在区域;半透明部,其对应于所述石墨烯量子点层的所在区域;在形成石墨烯发光晶体管的基板表面依次形成绝缘层和隔水隔氧层。本发明还提供这种石墨烯发光显示器的结构。本发明石墨烯发光晶体管的源漏极采用相同的电极材料,制备工艺一道光掩膜版即可成型。
Description
技术领域
本发明属于液晶显示技术领域,具体地讲,涉及一种新型的石墨烯发光显示器件及其制备方法。
背景技术
随着技术的不断进步和人们对生活要求不断提高,石墨烯具有质地坚硬,透明高(穿透率≈97.7%),导热系数高(达5300W/m·K),电子迁移率高(超过15000cm2/V·s)等优良特性,近年来在显示器上的应用,逐渐增多,尤其是在触摸屏的应用(作为替代传统透明导电薄膜ITO)和在LED方面的应用。
近年来由于石墨烯发光元件的出现,使石墨烯在显示领域的应用得以扩展。采用石墨烯材料制作的可通过栅极电压调节石墨烯发光晶体管发光颜色。
但是,目前应用石墨烯制备柔性显示器件的制程和工艺繁复,造成成本高昂,亟待简化制备工艺以降低成本。
例如,利用氧化石墨烯经过光照后可以转化为还原石墨烯,具有能够作为源极、漏极的导电特征;而调整光照工艺参数后,氧化石墨烯可以部分转化为还原石墨烯,而具有半导体的特征。而没有光辐照的氧化石墨烯具有绝缘体的特征,又可被用作绝缘层的制备。但是,由于需要不同图形的掩膜版以及不同的光辐照参数,而使得这些工艺步骤均需要一个一个独立进行,费时费力。
发明内容
为了解决上述现有技术存在的问题,本发明提供一种石墨烯发光显示器的制备方法,包括如下步骤:
在形成有薄膜晶体管的基板表面,制备氧化石墨烯薄膜;
在形成有薄膜晶体管的基板表面,将氧化石墨烯分散液涂布均匀,形成氧化石墨烯薄膜;
提供一光掩膜版与所述氧化石墨烯薄膜对应,使光通过所述光掩膜版辐射到所述氧化石墨烯薄膜上,形成石墨烯发光晶体管的源极、漏极和石墨烯量子点层;
在形成石墨烯发光晶体管的基板表面依次形成绝缘层和隔水隔氧层;
其中,所述光掩膜版包括:
全透明部,其对应于所述源极、漏极所在区域;
遮光部,其对应于所述薄膜晶体管所在区域;
半透明部,其对应于所述石墨烯量子点层的所在区域。
其中,所述光为蓝色光。
其中,所述光的工作波长为420~660nm。
其中,所述石墨烯栅极的材质为钼铝合金、铝银合金、铜钼铝合金中的一种。
本发明还提供这种石墨发光烯显示器,包括:设置在基板上的若干个子像素单元,每个子像素单元包括:形成在基板上的驱动模块、开关模块和栅极,以及,形成在所述栅极上的栅极绝缘层、形成在所述栅极绝缘层上的源极、漏极以及连接于所述源极、漏极之间的石墨烯量子点层;所述开关模块与所述源极电连接,所述驱动模块与所述栅极电连接。
其中,所述驱动模块使所述栅极至少具有三种电压模式,包括:
第一电压模式,使所述石墨烯量子点层发出红色光;
第二电压模式,使所述石墨烯量子点层发出绿色光;
第三电压模式,使所述石墨烯量子点层发出蓝色光。
其中,
当所述栅极处于所述第一电压模式,工作电压范围为0~12V;
当所述栅极处于所述第二电压模式,工作电压范围为20~35V;
当所述栅极处于所述第三电压模式,工作电压范围为40~50V。
其中,所述石墨烯栅极的材质为钼铝合金、铝银合金、铜钼铝合金中的一种。
其中,还包括形成在所述石墨烯量子点层上的绝缘层、隔水隔氧层。
有益效果:
本发明利用石墨烯发光晶体管设计了主动阵列驱动的石墨烯发光显示器,可实现石墨烯发光显示器大面积高亮度显示的目的。相比传统的AMOLED(有源矩阵有机发光二极体或主动矩阵有机发光二极体),该显示器无需彩色滤光片,RGB发光层材料相同,节省光掩膜版制程,减少产线设备投入,且发光材料价格便宜易得,具有成本优势。
进一步地,一方面该主动阵列石墨烯发光显示器,和顶发光AMOLED一样,发光区域具有很高的开口率,提升了亮度,降低了驱动功;另一方面,和传统的AMOLED相比,由于无需特别制备上电极,石墨烯发光晶体管的源漏极采用相同的电极材料,制备工艺一道光掩膜版即可成型,而且石墨烯晶体管的栅极和TFT的栅极也可采用相同的材料和制程,所以相比传统的AMOLED顶发光显示器,在电极制备上减少了一道,简化了工艺。
附图说明
通过结合附图进行的以下描述,本发明的实施例的上述和其它方面、特点和优点将变得更加清楚,附图中:
图1为本发明实施例的石墨烯发光显示器件的结构示意图。
图2为本发明实施例的石墨烯发光显示器件的制备流程图。
图3为本发明实施例的石墨烯发光显示器件在制备流程使用光掩膜版的示意图。
具体实施方式
以下,将参照附图来详细描述本发明的实施例。然而,可以以许多不同的形式来实施本发明,并且本发明不应该被解释为限制于这里阐述的具体实施例。相反,提供这些实施例是为了解释本发明的原理及其实际应用,从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
本发明提供一种石墨烯发光显示器的制备方法,利用氧化石墨烯在不同光照时间下还原程度的不同的性质,使得发光器件的源极、漏极和石墨烯量子点层通过一次光掩膜版即可制备出来。
如图1所述,本发明的石墨烯发光显示器200,包括:设置在基板10上的若干个子像素单元100,每个子像素单元100包括:形成在基板10上的驱动模块(视角所限,未示出)、开关模块20和栅极11,以及,形成在所述栅极11上的栅极绝缘层12、形成在所述栅极绝缘层12的源极14、漏极15以及连接于所述源极14、漏极15之间的石墨烯量子点层16;所述开关模块20与所述源极14电连接,所述驱动模块与所述栅极11电连接。
还包括形成在所述石墨烯量子点层16上的绝缘层17、隔水隔氧层18。
所述驱动模块、开关模块属于薄膜晶体管(TFT)阵列,用于为所述子像素单元提供驱动电压以及控制每个子像素单元与电源的通断。
具体地,石墨烯发光晶体管器件的结构包括:栅极11、形成在所述栅极11表面的栅极绝缘层12;形成在所述栅极绝缘层12上的源极14、漏极15,以及设置在所述源极14、漏极15之间的石墨烯量子点层16。其中,本发明的石墨烯发光晶体管为顶出光器件,为确保高出光率,栅极材料选自钼铝合金、铝银合金、铜钼铝合金中的一种,该栅极具有较高的反光特性,其对可见光的放射率大于80%,使得形成的石墨烯发光晶体管具有高出光率。
每一行的子像素单元的栅极相互进行电器连接,利用石墨烯发光晶体管能根据栅电压进行发光颜色调整的特性,石墨烯发光晶体管的每一行的发光颜色可由每一行的对应的栅极电压进行控制。该行的栅极电压由驱动模块提供,使得栅极能够至少具有三种电压模式。
例如,
当栅极处于第一电压模式,此时工作电压为低电压,工作电压范围为0~12V。在该低电压驱动下,整行的子像素单元中所述石墨烯量子点层均发出红色光R。
当栅极处于第二电压模式,此时工作电压为中间电压,工作电压范围为20~35V。在该中间电压驱动下,整行的子像素单元中所述石墨烯量子点层均发出绿色光(图中未示出)。
当栅极处于第三电压模式,此时工作电压为高电压,工作电压范围为40~50V。在该高电压驱动下,整行的子像素单元中所述石墨烯量子点层均发出蓝色光B。
下面,介绍这种石墨发光烯显示器的制备步骤。
在这种石墨烯发光晶体管的制备工艺中,源极、漏极和石墨烯量子点层均由石墨烯薄膜发展而来。但实际上由于源极、漏极和石墨烯量子点层所承担的作用不同、形状结构不同,工艺制备步骤也被分配到独立的步骤中进行。即,还原氧化石墨烯源极、漏极图案制备和半导体石墨烯量子点图案化制备的步骤是相互独立的两个制备步骤。
结合图2所示,在本发明的石墨烯发光显示器的制备方法中,利用包括如下步骤:
步骤S1:在基板上利用真空热蒸镀的方法,制备TFT阵列,以及石墨烯发光器件中的栅极11、栅极绝缘层12,获得TFT阵列基板。本发明石墨烯发光晶体管的栅极和TFT的栅极也可采用相同的材料和制程,进一步简化工艺。
步骤S2:采用涂布的方式,例如,包括旋涂,喷涂,丝网印刷等,将氧化石墨烯分散液涂布均匀在TFT阵列基板表面、形成氧化石墨烯薄膜20。
步骤S3:结合图3所示,本实施例提供一与所述氧化石墨烯薄膜对应的光掩膜版30,过在惰性气体氛围下用高密度蓝光透过光掩膜版照射下方的氧化石墨烯,从而实现了还原氧化石墨烯源漏极及半导体量子点图案制备,使之获得不同的功能。例如,本实施例的光采用工作波长为420~660nm波段的蓝色光。所述光掩膜版30包括:为包括全透光部31、遮光部32和半透明部33,用于使光能够透射到不同的部位。
其中,再结合图1所示,全透光部31对应于预设为石墨烯发光晶体管上的源极14、漏极15所在区域。全透光部能够让光线(例如,紫外线)完全透过并到达氧化石墨烯薄膜上,将该区域的氧化石墨烯薄膜完全还原为石墨烯,形成石墨烯源极、石墨烯漏极。还原后的石墨洗能够具有良好的导热导电性能,是作为导电电极的良好材料。
进一步地,遮光部32对应于预设为石墨烯发光晶体管上的TFT器件所在区域。TFT器件对光敏感,光照容易破环其性能,光掩膜版遮光部不会辐照到对应的氧化石墨烯,保留其良好的绝缘特性对TFT器件保护;
而所述半透明部33的透光率例如可以是所述全透明部的30~70%,用于对应预设为石墨烯发光晶体管上的石墨烯量子点层16所在区域。氧化石墨烯薄膜受到光照辐射一定时间后能逐渐还原为石墨烯。控制光照强度和时长,可以控制氧化石墨烯还原程度,以获得石墨烯量子点层的最优性能。一般地,光照强度受石墨烯源电极控制;素点亮时间受刷屏频率影响,对于一般显示器都满足刷屏率60Hz或120Hz。故此,半透明部是能够让光部分透过达到需要设置为石墨烯量子点层的位置,使得氧化石墨烯薄膜部分还原。
综上所述,光照射的到光掩膜版后,遮光部区域下的氧化石墨烯未经光照射而呈现绝缘体属性;半透明部区域下的氧化石墨烯受到的光照射强度减弱而部分还原、呈现半导体属性,全透明部对应区域为石墨烯量子点;光照射的到光掩膜版后,透明区域下是氧化石墨烯经光照射而转化为还原石墨烯呈现导电属性,对应区域为源极漏极电极区。
步骤S4:完成源极、漏极和石墨烯量子点制备后,获得图案化的显示器件。在所述石墨烯发光晶体管表面依次形成绝缘层、隔水隔氧层,完成显示器件的封装,获得石墨烯发光显示器的制备。
虽然已经参照特定实施例示出并描述了本发明,但是本领域的技术人员将理解:在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下,可在此进行形式和细节上的各种变化。
Claims (9)
1.一种石墨烯发光显示器的制备方法,其特征在于,包括如下步骤:
在基板上制备薄膜晶体管阵列和石墨烯发光晶体管的栅极、栅绝缘层,所述石墨烯发光晶体管的栅极与所述薄膜晶体管的栅极通过同一个制程获得;
在形成有薄膜晶体管的基板表面,将氧化石墨烯分散液涂布均匀,形成氧化石墨烯薄膜;
提供一光掩膜版与所述氧化石墨烯薄膜对应,使光通过所述光掩膜版辐射到所述氧化石墨烯薄膜上,形成石墨烯发光晶体管的源极、漏极和石墨烯量子点层;
在形成石墨烯发光晶体管的基板表面依次形成绝缘层和隔水隔氧层;
其中,所述光掩膜版包括:
全透明部,其对应于所述源极、漏极所在区域;
遮光部,其对应于所述薄膜晶体管所在区域;
半透明部,其对应于所述石墨烯量子点层的所在区域。
2.根据权利要求1所述石墨烯发光显示器的制备方法,其特征在于,所述光为蓝色光。
3.根据权利要求2所述石墨烯发光显示器的制备方法,其特征在于,所述光的工作波长420~660nm。
4.根据权利要求1所述石墨烯发光显示器的制备方法,其特征在于,所述石墨烯栅极的材质为钼铝合金、铝银合金、铜钼铝合金中的一种。
5.一种利用权利要求1~4任一所述的制备方法制备得到的石墨烯发光显示器,包括:设置在基板上的若干个子像素单元,其特征在于,每个子像素单元包括:形成在基板上的驱动模块、开关模块和栅极,以及,形成在所述栅极上的栅极绝缘层、形成在所述栅极绝缘层上的源极、漏极以及连接于所述源极、漏极之间的石墨烯量子点层;所述开关模块与所述源极电连接,所述驱动模块与所述栅极电连接。
6.根据权利要求5所述石墨烯发光显示器,其特征在于,所述驱动模块使所述栅极至少具有三种电压模式,包括:
第一电压模式,使所述石墨烯量子点层发出红色光;
第二电压模式,使所述石墨烯量子点层发出绿色光;
第三电压模式,使所述石墨烯量子点层发出蓝色光。
7.根据权利要求6所述石墨烯发光显示器,其特征在于,
当所述栅极处于所述第一电压模式,工作电压范围为0~12V;
当所述栅极处于所述第二电压模式,工作电压范围为20~35V;
当所述栅极处于所述第三电压模式,工作电压范围为40~50V。
8.根据权利要求5所述石墨烯发光显示器,其特征在于,所述石墨烯栅极的材质为钼铝合金、铝银合金、铜钼铝合金中的一种。
9.根据权利要求5所述石墨烯发光显示器,其特征在于,还包括形成在所述石墨烯量子点层上的绝缘层、隔水隔氧层。
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