CN104952879B - 采用coa技术的双栅极tft基板结构 - Google Patents

采用coa技术的双栅极tft基板结构 Download PDF

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CN104952879B
CN104952879B CN201510224511.6A CN201510224511A CN104952879B CN 104952879 B CN104952879 B CN 104952879B CN 201510224511 A CN201510224511 A CN 201510224511A CN 104952879 B CN104952879 B CN 104952879B
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gate
layer
tft substrate
substrate structure
insulating barrier
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CN104952879A (zh
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张合静
曾志远
苏智昱
李文辉
石龙强
吕晓文
葛世民
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种采用COA技术的双栅极TFT基板结构，包括：基板(1)、设于基板(1)上的底栅极(2)、覆盖底栅极(2)与基板(1)的底栅绝缘层(3)、于底栅极(2)上方设于底栅极绝缘层(3)上的有源层(4)、设于有源层(4)与底栅极绝缘层(3)上的蚀刻阻挡层(5)、设于蚀刻阻挡层(5)上并分别与所述有源层(4)的两端相接触的源/漏极(6)、设于源/漏极(6)与蚀刻阻挡层(5)上的彩色滤光片(8)、及设于彩色滤光片(8)上并与所述底栅极(2)相接触的顶栅极(9)；所述彩色滤光片(8)同时作为钝化层、及顶栅绝缘层，能够有效保护有源层(4)及前制程薄膜，保证有源层(4)及前制程薄膜的原始特性和稳定性。

Description

采用COA技术的双栅极TFT基板结构
技术领域
本发明涉及显示技术领域，尤其涉及一种采用COA技术的双栅极TFT基板结构。
背景技术
在显示技术领域，平板显示装置因具有高画质、省电、机身薄等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
目前常见的平板显示装置主要包括：液晶显示装置(Liquid Crystal Display，LCD)和有机电致发光显示装置(Organic Light-Emitting Diode，AMOLED)。薄膜晶体管(Thin Film Transistor，TFT)是LCD和AMOLED显示装置的主要驱动元件，多个薄膜晶体管呈阵列式地排布于TFT基板上。
通常，在有源阵列显示装置特别是OLED中，阈值电压(Vth)的重要性尤为突出，稳定、均匀的阈值电压能够使AMOLED的显示亮度较均匀，显示品质较高。相比常见的单栅极薄膜晶体管(single-gate TFT)，双栅极薄膜晶体管(Dual-gate TFT)具有更优的性能，如电子迁移率更高，开态电流较大、亚阈值摆幅更小、阈值电压的稳定性及均匀性更好、栅极偏压及照光稳定性更好等。
在OLED的制程中，为了降低制作难度以及避免有机发光材料色度与亮度的恶化不均，通常采用白色有机发光二级管搭配彩色滤光片(Color Filter，CF)的显示方法。白光OLED显示装置中的彩色滤光片主要在TFT基板的阵列制程完成之后进行涂布，即采用彩色滤光片制备于TFT阵列基板(Color Filter On Array，COA)技术。
如图1所示，现有的一种采用COA技术的双栅极TFT基板结构包括：
基板100；
从下到上依次层叠设置于基板100上的底栅极200、底栅绝缘层300、有源层400、蚀刻阻挡层500、源/漏极600；
设于源/漏极600、与蚀刻阻挡层500上的钝化层700；
以及设于钝化层700上的顶栅极810、与彩色滤光片830。
上述采用COA技术的双栅极TFT基板结构，将顶栅极810、与彩色滤光片830设置于同一层别，即钝化层700上，所述彩色滤光片830仅起到滤光作用，所述钝化层700同时作为顶栅极810的顶栅绝缘层，因此该钝化层700需要具有良好的稳定性及致密性。而现有技术采用具有良好致密性和稳定性的无机材料，如氧化硅或氮化硅，在相对较高的温度环境下，通常在350℃以上，来沉积形成所述钝化层700。由此产生的技术问题是：所述钝化层700在高温下沉积时的气体会进入到前序制程中沉积的薄膜，改变绝缘层或有源层的特性，亦或引起金属电极鼓包(hillock)等现象，最终会引起TFT电性能的异常。
发明内容
本发明的目的在于提供一种采用COA技术的双栅极TFT基板结构，采用彩色滤光片同时作为钝化层与顶栅绝缘层，其制程过程不需要在较高的温度下沉积无机钝化层，从而避免高温沉积无机钝化层产生的气体进入到前序制程形成的薄膜，能够有效保护有源层及前制程薄膜，保证有源层及前制程薄膜的原始特性和稳定性，使得双栅极TFT的电性能稳定。
为实现上述目的，本发明提供一种采用COA技术的双栅极TFT基板结构，包括：基板、设于所述基板上的底栅极、覆盖所述底栅极与基板的底栅绝缘层、于所述底栅极上方设于所述底栅极绝缘层上的有源层、设于所述有源层与底栅极绝缘层上的蚀刻阻挡层、设于所述蚀刻阻挡层上并分别与所述有源层的两端相接触的源/漏极、设于所述源/漏极与蚀刻阻挡层上的彩色滤光片、及设于所述彩色滤光片上并与所述底栅极相接触的顶栅极；
所述彩色滤光片同时作为钝化层、及顶栅绝缘层。
所述采用COA技术的双栅极TFT基板结构，还包括夹设于所述源/漏极、蚀刻阻挡层与彩色滤光片之间的无机钝化层。
所述源/漏极分别经由贯通蚀刻阻挡层的过孔与所述有源层的两端相接触。
所述顶栅极经由贯通蚀刻阻挡层及底栅极绝缘层的过孔与所述底栅极相接触。
所述顶栅极经由贯通无机钝化层、蚀刻阻挡层及底栅极绝缘层的过孔与所述底栅极相接触。
所述顶栅极为透明电极。
所述透明电极为ITO电极、IZO电极或薄层金属电极。
所述有源层的材料为非晶硅基半导体、多晶硅基半导体、氧化锌基半导体中的一种。
所述底栅极与源/漏极的材料为钼、钛、铝、铜中的一种或多种的堆栈组合，所述底栅极绝缘层的材料为氮化硅、氧化硅、或二者的组合，所述蚀刻阻挡层的材料为氧化铝。
所述无机钝化层的材料为氮化硅、氧化硅、或二者的组合。
本发明的有益效果：本发明提供的一种采用COA技术的双栅极TFT基板结构，通过将顶栅极设置在彩色滤光片上，以所述彩色滤光片同时作为钝化层、及顶栅绝缘层，其制程过程不需要在较高的温度下沉积无机钝化层，从而避免高温沉积无机钝化层产生的气体进入到前序制程形成的薄膜，能够有效保护有源层及前制程薄膜，保证有源层及前制程薄膜的原始特性和稳定性，使得双栅极TFT的电性能稳定。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的一种采用COA技术的双栅极TFT基板结构的剖面示意图；
图2为本发明采用COA技术的双栅极TFT基板结构的第一实施例的剖面示意图；
图3为本发明采用COA技术的双栅极TFT基板结构的第二实施例的剖面示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
本发明提供一种采用COA技术的双栅极TFT基板结构，图2所示为本发明采用COA技术的双栅极TFT基板结构的第一实施例，包括：基板1、设于所述基板1上的底栅极2、覆盖所述底栅极2与基板1的底栅绝缘层3、于所述底栅极2上方设于所述底栅极绝缘层3上的有源层4、设于所述有源层4与底栅极绝缘层3上的蚀刻阻挡层5、设于所述蚀刻阻挡层5上并分别与所述有源层4的两端相接触的源/漏极6、设于所述源/漏极6与蚀刻阻挡层5上的无机钝化层7、设于所述无机钝化层7上的彩色滤光片8、及设于所述彩色滤光片8上并与所述底栅极2相接触的顶栅极9。
所述彩色滤光片8与所述无机钝化层7共同作为钝化层，同时所述彩色滤光片8还作为顶栅绝缘层。
由于彩色滤光片8叠加于无机钝化层7上，二者共同起到钝化层的作用，因此所述无机钝化层7与图1所示的现有的采用COA技术的双栅极TFT基板结构中的无机钝化层700相比，该无机钝化层7对致密性的要求相对降低，可在不超过210℃的相对较低的温度环境下进行沉积，从而可避免高温沉积无机钝化层产生的气体进入到前序制程形成的薄膜，能够有效保护有源层4及前制程薄膜，保证有源层4及前制程薄膜的原始特性和稳定性，使得双栅极TFT的电性能稳定。
具体地，所述源/漏极6分别经由贯通蚀刻阻挡层5的过孔与所述有源层4的两端相接触；所述顶栅极9经由贯通无机钝化层7、蚀刻阻挡层5及底栅极绝缘层3的过孔与所述底栅极2相接触。
所述彩色滤光片8包括了红色滤光片、绿色滤光片、与蓝色滤光片。
优选的，所述底栅极2与源/漏极6的材料为钼、钛、铝、铜中的一种或多种的堆栈组合；所述底栅极绝缘层3的材料为氮化硅、氧化硅、或二者的组合；所述有源层4的材料为非晶硅基半导体、多晶硅基半导体、氧化锌基半导体中的一种，如氧化铟镓锌(IGZO)半导体；所述蚀刻阻挡层5的材料为氧化铝。
值得一提的是，所述顶栅极9可为非透明电极，也可为透明电极，例如透明的氧化铟锡(ITO)电极、氧化铟锌(IZO)电极、银等薄层金属电极等。当所述顶栅极9为透明电极时，所述彩色滤光片8还起到遮光作用，能够提高双栅极TFT的照光稳定性。
图3所示为本发明采用COA技术的双栅极TFT基板结构的第二实施例，该第二实施例与第一实施例相比，省去了夹设于所述源/漏极6、蚀刻阻挡层5与彩色滤光片8之间的无机钝化层7，所述彩色滤光片8同时作为钝化层与顶栅绝缘层，相应的所述顶栅极9经由贯通蚀刻阻挡层5及底栅极绝缘层3的过孔与所述底栅极2相接触。其它均与第一实施例相同，此处不再赘述。
该第二实施例省去了无机钝化层7，与第一实施例相比可节省一道制作无机钝化层7的光罩；彩色滤光片8不需要高温沉积，与现有技术相比可避免高温沉积无机钝化层产生的气体进入到前序制程形成的薄膜，能够有效保护有源层4及前制程薄膜，保证有源层4及前制程薄膜的原始特性和稳定性，使得双栅极TFT的电性能稳定。
综上所述，本发明的采用COA技术的双栅极TFT基板结构，通过将顶栅极设置在彩色滤光片上，以所述彩色滤光片同时作为钝化层、及顶栅绝缘层，其制程过程不需要在较高的温度下沉积无机钝化层，从而避免高温沉积无机钝化层产生的气体进入到前序制程形成的薄膜，能够有效保护有源层及前制程薄膜，保证有源层及前制程薄膜的原始特性和稳定性，使得双栅极TFT的电性能稳定。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种采用COA技术的双栅极TFT基板结构，其特征在于，包括：基板(1)、设于所述基板(1)上的底栅极(2)、覆盖所述底栅极(2)与基板(1)的底栅绝缘层(3)、于所述底栅极(2)上方设于所述底栅极绝缘层(3)上的有源层(4)、设于所述有源层(4)与底栅极绝缘层(3)上的蚀刻阻挡层(5)、设于所述蚀刻阻挡层(5)上并分别与所述有源层(4)的两端相接触的源/漏极(6)、设于所述源/漏极(6)与蚀刻阻挡层(5)上的彩色滤光片(8)、及设于所述彩色滤光片(8)上并与所述底栅极(2)相接触的顶栅极(9)；
所述彩色滤光片(8)同时作为钝化层、及顶栅绝缘层。
2.如权利要求1所述的采用COA技术的双栅极TFT基板结构，其特征在于，还包括夹设于所述源/漏极(6)、蚀刻阻挡层(5)与彩色滤光片(8)之间的无机钝化层(7)。
3.如权利要求1或2所述的采用COA技术的双栅极TFT基板结构，其特征在于，所述源/漏极(6)分别经由贯通蚀刻阻挡层(5)的过孔与所述有源层(4)的两端相接触。
4.如权利要求1所述的采用COA技术的双栅极TFT基板结构，其特征在于，所述顶栅极(9)经由贯通蚀刻阻挡层(5)及底栅极绝缘层(3)的过孔与所述底栅极(2)相接触。
5.如权利要求2所述的采用COA技术的双栅极TFT基板结构，其特征在于，所述顶栅极(9)经由贯通无机钝化层(7)、蚀刻阻挡层(5)及底栅极绝缘层(3)的过孔与所述底栅极(2)相接触。
6.如权利要求1或2所述的采用COA技术的双栅极TFT基板结构，其特征在于，所述顶栅极(9)为透明电极。
7.如权利要求6所述的采用COA技术的双栅极TFT基板结构，其特征在于，所述透明电极为ITO电极、IZO电极或薄层金属电极。
8.如权利要求1或2所述的采用COA技术的双栅极TFT基板结构，其特征在于，所述有源层(4)的材料为非晶硅基半导体、多晶硅基半导体、氧化锌基半导体中的一种。
9.如权利要求1或2所述的采用COA技术的双栅极TFT基板结构，其特征在于，所述底栅极(2)与源/漏极(6)的材料为钼、钛、铝、铜中的一种或多种的堆栈组合，所述底栅极绝缘层(3)的材料为氮化硅、氧化硅、或二者的组合，所述蚀刻阻挡层(5)的材料为氧化铝。
10.如权利要求2所述的采用COA技术的双栅极TFT基板结构，其特征在于，所述无机钝化层(7)的材料为氮化硅、氧化硅、或二者的组合。
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