WO2017173680A1 - 石墨烯显示器 - Google Patents

石墨烯显示器 Download PDF

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Publication number
WO2017173680A1
WO2017173680A1 PCT/CN2016/080152 CN2016080152W WO2017173680A1 WO 2017173680 A1 WO2017173680 A1 WO 2017173680A1 CN 2016080152 W CN2016080152 W CN 2016080152W WO 2017173680 A1 WO2017173680 A1 WO 2017173680A1
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Prior art keywords
graphene
pattern
light emitting
transparent substrate
emitting unit
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PCT/CN2016/080152
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French (fr)
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樊勇
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深圳市华星光电技术有限公司
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Priority to US15/038,609 priority Critical patent/US10153391B2/en
Publication of WO2017173680A1 publication Critical patent/WO2017173680A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/128—Active-matrix OLED [AMOLED] displays comprising two independent displays, e.g. for emitting information from two major sides of the display
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0041—Devices characterised by their operation characterised by field-effect operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs

Definitions

  • the present invention relates to the field of displays, and more particularly to a graphene display.
  • Graphene materials have excellent properties such as hard texture, high transparency (transfer rate ⁇ 97.7%), high thermal conductivity (up to 5300W/m•K), high electron mobility (over 15000cm2/V•s), and display in recent years.
  • the application has gradually increased, especially in touch screen applications (as an alternative to the traditional transparent conductive film ITO) and in LED applications.
  • graphene light-emitting elements such as graphene diodes
  • the application of graphene in the field of display has been expanded.
  • Graphene light-emitting diodes can change the color of light by adjusting the gate voltage.
  • the principle is that the gate voltage is generated.
  • the size of the electric field can adjust the Fermi level of the semiconductor-reduced graphene oxide, thereby adjusting the graphene emission wavelength.
  • Today, how to make graphene displays with more stable color and color reproduction has become a hot topic in current research.
  • the technical problem to be solved by the present invention is to provide a graphene display to make the graphene display have relatively stable color and color reproduction.
  • one technical solution adopted by the present invention is to provide a graphene display including a first graphene light emitting unit and a second graphene light emitting unit which are disposed in a stacked manner, and located at the a metal shielding layer between the graphene light emitting unit and the second graphene light emitting unit.
  • first graphene light emitting unit includes a first gate pattern
  • second graphene light emitting unit includes a second gate pattern disposed in a stack with the first gate pattern, wherein the metal shield layer is located Between the first gate pattern and the second gate pattern.
  • the graphene display further comprises a first insulating layer for electrically isolating the first gate pattern from the metal shield layer and for electrically isolating the second gate pattern from the metal shield a second insulating layer of the layer.
  • the graphene display further comprises a first transparent substrate and a second transparent substrate disposed opposite to each other, wherein the first graphene light emitting unit and the second graphene light emitting unit are stacked on the first transparent substrate and Between the second transparent substrates, and a light emitting surface of the first graphene light emitting unit is disposed adjacent to the first transparent substrate, a light emitting surface of the second graphene light emitting unit and the second transparent substrate Adjacent settings.
  • the first graphene light emitting unit includes a first source pattern and a first drain pattern disposed on the first transparent substrate and spaced apart from each other, electrically connected to the first source pattern, and first a first graphene light-emitting pattern between the drain patterns, a third insulating layer overlying the first graphene light-emitting pattern, the first gate pattern being disposed away from the third insulating layer One side of a transparent substrate;
  • the second graphene light emitting unit includes a second source pattern and a second drain pattern disposed on the second transparent substrate and spaced apart from each other, and electrically connected to the second source pattern and the second drain a second graphene light-emitting pattern between the patterns, a fourth insulating layer covering the second graphene light-emitting pattern, the second gate pattern being disposed away from the second transparent layer of the fourth insulating layer One side of the substrate.
  • the third insulating layer further electrically isolates the adjacent first graphene light emitting unit, and the fourth insulating layer further electrically isolates the adjacent second graphene light emitting unit.
  • the first graphene light emitting unit is fixed on the first transparent substrate, and the second graphene light emitting unit is fixed on the second transparent substrate and is fixed to the metal shielding layer by a symmetric manner. On both sides.
  • the material of the first transparent substrate and the second transparent substrate is a water-blocking, oxygen-proof, water-proof, oxygen-proof transparent organic material or glass or nickel.
  • the material of the first graphene light-emitting pattern and the second graphene light-emitting pattern is a semiconductor-reduced graphene oxide.
  • the materials of the first and second source patterns and the first and second drain patterns are reduced graphene oxide, and the materials of the first and second gate patterns are graphene oxide or high reflection. Rate metal.
  • the invention has the beneficial effects that the graphene display of the present invention is different from the prior art, and the first and second graphene light emitting units are displayed on both sides, so that the graphene display has a simple structure and two sides.
  • the illuminating color does not change due to the electric field of the gate pattern, and has a more stable color and color reproduction.
  • FIG. 1 is a schematic view showing the structure of a graphene display of the present invention.
  • FIG. 1 is a schematic structural view of a graphene display of the present invention.
  • the graphene display includes a first graphene light emitting unit 1 and a second graphene light emitting unit 2 which are disposed in a stacked manner, and the first graphene light emitting unit 1 and the second graphene light emitting unit Metal shield layer 3 between cells 2.
  • the first graphene light emitting unit 1 includes a first gate pattern 11
  • the second graphene light emitting unit 2 includes a second gate pattern 21 laminated with the first gate pattern 11 , wherein the metal
  • the shield layer 3 is located between the first gate pattern 11 and the second gate pattern 21.
  • the graphene display further includes a first insulating layer 4 for electrically isolating the first gate pattern 11 and the metal shield layer 3 and for electrically isolating the second gate pattern 21 from the The second insulating layer 5 of the metal shield layer 3.
  • the graphene display further includes a first transparent substrate 6 and a second transparent substrate 7 disposed opposite to each other, wherein the first graphene light emitting unit 1 and the second graphene light emitting unit 2 are stacked on the first transparent Between the substrate 6 and the second transparent substrate 7, and the light emitting surface of the first graphene light emitting unit 1 is disposed adjacent to the first transparent substrate 6, and the light emitting surface of the second graphene light emitting unit 2 It is disposed adjacent to the second transparent substrate 7.
  • the first graphene light-emitting unit 1 includes a first source pattern 12 and a first drain pattern 13 which are disposed on the first transparent substrate 6 and are spaced apart from each other, and are electrically connected to the first source pattern 12 a first graphene light emitting pattern 14 between the first drain pattern 13 and a third insulating layer 15 overlying the first graphene light emitting pattern, the first gate pattern 11 being disposed on the third The side of the insulating layer 15 that is away from the first transparent substrate 6.
  • the second graphene light emitting unit 2 includes a second source pattern 22 and a second drain pattern 23 disposed on the second transparent substrate 7 and spaced apart from each other, and electrically connected to the second source pattern 22 a second graphene light-emitting pattern 24 between the second drain pattern 23 and a fourth insulating layer 25 overlying the second graphene light-emitting pattern, the second gate pattern 21 being disposed on the fourth The side of the insulating layer 25 that is away from the second transparent substrate 7.
  • the third insulating layer 15 further electrically isolates the adjacent first graphene light emitting unit 1
  • the fourth insulating layer 25 further electrically isolates the adjacent second graphene light emitting unit 2 .
  • the first graphene light emitting unit 1 is fixed on the first transparent substrate 6, and the second graphene light emitting unit 2 is fixed on the second transparent substrate 7, and is fixed to the metal shield by a symmetric manner. Both sides of layer 3.
  • the number of the first and second graphene light-emitting units 1 and 2 may be set according to the specific needs of the graphene display.
  • the material of the first transparent substrate 6 and the second transparent substrate 7 is a water-blocking, oxygen-proof, water-proof, oxygen-proof transparent organic material or glass or nickel.
  • the material of the first graphene light-emitting pattern 13 and the second graphene light-emitting pattern 23 is a semiconductor-reduced graphene oxide. Materials of the first and second source patterns 12 and 22 and the first and second drain patterns 13 and 23 are reduced graphene oxide, materials of the first and second gate patterns 11 and 21 It is graphene oxide or high reflectivity metal.
  • the first and second graphene light-emitting units 1 and 2 emit light of different colors according to the difference of the gate pattern voltage, for example, when the gate pattern voltage Vgs is 0. Between -10 volts, when the source-drain pattern voltage Vds is greater than the turn-on voltage Vth, the light emitted by the first and second graphene light-emitting units 1 and 2 is red light; when Vgs is between 20-30 volts, source and drain When the pattern voltage Vds is greater than the turn-on voltage Vth, the first and second graphene light-emitting units 1 and 2 emit green light; when Vgs is between 40 and 50 volts, and the source-drain pattern voltage Vds>Vth, the first And the second graphene light-emitting units 1 and 2 emit blue light.
  • the intensity of the light emitted by the first and second graphene light-emitting units 1 and 2 can be changed by changing the magnitude of the Vds voltage, so that the gray scale can be adjusted.
  • the first and second graphene light-emitting units 1 and 2 can be divided into three types of RGB pixels according to different voltages of the first and second gate patterns 11 and 21, and the RGB pixels are separated by an insulating layer SiO2.
  • the metal shielding layer 3 is added between the first and second gate patterns 11 and 21 of the graphene display, In order to avoid leakage between the metal shield layer 3 and the first and second gate patterns 11 and 21, the first gate pattern 11 and the metal shield layer 3, the second gate pattern 21 and the metal shield are shielded.
  • An insulating layer is disposed between the layers 3.
  • the graphene display makes the graphene display structure simple by providing the first and second graphene light emitting units displayed on both sides, and the color of the two sides of the light is not changed due to the electric field of the gate pattern, and has a stable color. And color reproduction.

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Abstract

一种石墨烯显示器。石墨烯显示器包括层叠设置的第一石墨烯发光单元（1）和第二石墨烯发光单元（2），以及位于第一石墨烯发光单元（1）和第二石墨烯发光单元（2）之间的金属屏蔽层（3），石墨烯显示器结构简单，且两面的发光颜色不会因为栅极图案电场而发生改变，具有较稳定颜色和色彩还原性。

Description

石墨烯显示器
【技术领域】
本发明涉及显示器领域，特别是涉及一种石墨烯显示器。
【背景技术】
石墨烯材料具有质地坚硬，透明度高(穿透率≈97.7％)，导热系数高(达5300W/m•K)，电子迁移率高(超过15000cm2/V•s)等优良特点，近年来在显示器上的应用，逐渐增多，尤其是在触摸屏的应用(作为替代传统透明导电薄膜ITO)和在LED方面的应用。近年来由于石墨烯发光元件，例如石墨烯二极管的出现，使石墨烯在显示领域的应用得以扩展，石墨烯发光二级管可以通过调节栅极电压改变发光颜色，其原理为栅极电压产生的电场大小可以调节半导体还原氧化石墨烯的费米能级，从而可以调节石墨烯发光波长。当今，如何使石墨烯显示器具有较稳定颜色和色彩还原性已经成为时下研究的热门课题。
【发明内容】
本发明主要解决的技术问题是提供一种石墨烯显示器，以使石墨烯显示器具有较稳定颜色和色彩还原性。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种石墨烯显示器，所述石墨烯显示器包括层叠设置的第一石墨烯发光单元和第二石墨烯发光单元，以及位于所述第一石墨烯发光单元和所述第二石墨烯发光单元之间的金属屏蔽层。
其中，所述第一石墨烯发光单元包括第一栅极图案，所述第二石墨烯发光单元包括与所述第一栅极图案层叠设置的第二栅极图案，其中所述金属屏蔽层位于所述第一栅极图案和所述第二栅极图案之间。
其中，所述石墨烯显示器进一步包括用于电性隔离所述第一栅极图案与所述金属屏蔽层的第一绝缘层以及用于电性隔离所述第二栅极图案与所述金属屏蔽层的第二绝缘层。
其中，所述石墨烯显示器进一步包括相对设置的第一透明基板和第二透明基板，其中所述第一石墨烯发光单元和所述第二石墨烯发光单元层叠设置于所述第一透明基板和所述第二透明基板之间，且所述第一石墨烯发光单元的发光面与所述第一透明基板相邻设置，所述第二石墨烯发光单元的发光面与所述第二透明基板相邻设置。
其中，所述第一石墨烯发光单元包括设置于所述第一透明基板上且彼此间隔的第一源极图案和第一漏极图案、电性连接于所述第一源极图案和第一漏极图案之间的第一石墨烯发光图案、覆盖于所述第一石墨烯发光图案上的第三绝缘层，所述第一栅极图案设置于所述第三绝缘层的远离所述第一透明基板的一侧；
所述第二石墨烯发光单元包括设置于所述第二透明基板上且彼此间隔的第二源极图案和第二漏极图案、电性连接于所述第二源极图案和第二漏极图案之间的第二石墨烯发光图案、覆盖于所述第二石墨烯发光图案上的第四绝缘层，所述第二栅极图案设置于所述第四绝缘层的远离所述第二透明基板的一侧。
其中，所述第三绝缘层进一步电性隔离相邻的所述第一石墨烯发光单元，所述第四绝缘层进一步电性隔离相邻的所述第二石墨烯发光单元。
其中，所述第一石墨烯发光单元固定于所述第一透明基板上，所述第二石墨烯发光单元固定于所述第二透明基板上，并通过对称方式固定于所述金属屏蔽层的两侧。
其中，所述第一透明基板及所述第二透明基板的材料为阻水阻氧隔水隔氧透明有机材质或玻璃或镍。
其中，所述第一石墨烯发光图案及所述第二石墨烯发光图案的材料为半导体还原氧化石墨烯。
其中，所述第一及第二源极图案和所述第一及第二漏极图案的材料为还原氧化石墨烯，所述第一及第二栅极图案的材料为氧化石墨烯或高反射率金属。
本发明的有益效果是：区别于现有技术的情况，本发明的所述石墨烯显示器通过设置双面显示的第一及第二石墨烯发光单元，使得所述石墨烯显示器结构简单，且两面的发光颜色不会因为栅极图案电场而发生改变，具有较稳定颜色和色彩还原性。
【附图说明】
图1是本发明的石墨烯显示器的结构示意图。
【具体实施方式】
请参阅图1，是本发明的石墨烯显示器的结构示意图。如图1所示，所述石墨烯显示器包括层叠设置的第一石墨烯发光单元1和第二石墨烯发光单元2，以及位于所述第一石墨烯发光单元1和所述第二石墨烯发光单元2之间的金属屏蔽层3。
所述第一石墨烯发光单元1包括第一栅极图案11，所述第二石墨烯发光单元2包括与所述第一栅极图案11层叠设置的第二栅极图案21，其中所述金属屏蔽层3位于所述第一栅极图案11和所述第二栅极图案21之间。
所述石墨烯显示器进一步包括用于电性隔离所述第一栅极图案11与所述金属屏蔽层3的第一绝缘层4以及用于电性隔离所述第二栅极图案21与所述金属屏蔽层3的第二绝缘层5。
所述石墨烯显示器进一步包括相对设置的第一透明基板6和第二透明基板7，其中所述第一石墨烯发光单元1和所述第二石墨烯发光单元2层叠设置于所述第一透明基板6和所述第二透明基板7之间，且所述第一石墨烯发光单元1的发光面与所述第一透明基板6相邻设置，所述第二石墨烯发光单元2的发光面与所述第二透明基板7相邻设置。
所述第一石墨烯发光单元1包括设置于所述第一透明基板6上且彼此间隔的第一源极图案12和第一漏极图案13、电性连接于所述第一源极图案12和第一漏极图案13之间的第一石墨烯发光图案14、覆盖于所述第一石墨烯发光图案上的第三绝缘层15，所述第一栅极图案11设置于所述第三绝缘层15的远离所述第一透明基板6的一侧。
所述第二石墨烯发光单元2包括设置于所述第二透明基板7上且彼此间隔的第二源极图案22和第二漏极图案23、电性连接于所述第二源极图案22和第二漏极图案23之间的第二石墨烯发光图案24、覆盖于所述第二石墨烯发光图案上的第四绝缘层25，所述第二栅极图案21设置于所述第四绝缘层25的远离所述第二透明基板7的一侧。
所述第三绝缘层15进一步电性隔离相邻的所述第一石墨烯发光单元1，所述第四绝缘层25进一步电性隔离相邻的所述第二石墨烯发光单元2。
所述第一石墨烯发光单元1固定于所述第一透明基板6上，所述第二石墨烯发光单元2固定于所述第二透明基板7上，并通过对称方式固定于所述金属屏蔽层3的两侧。
在本实施例中，所述第一及第二石墨烯发光单元1及2的数量可以依据所述石墨烯显示器的具体需求而设置。所述第一透明基板6及所述第二透明基板7的材料为阻水阻氧隔水隔氧透明有机材质或玻璃或镍。所述第一石墨烯发光图案13及所述第二石墨烯发光图案23的材料为半导体还原氧化石墨烯。所述第一及第二源极图案12及22和所述第一及第二漏极图案13及23的材料为还原氧化石墨烯，所述第一及第二栅极图案11及21的材料为氧化石墨烯或高反射率金属。
对于石墨烯显示器而言，根据所述栅极图案电压的不同，所述第一及第二石墨烯发光单元1及2会发出不同颜色的光，例如，当所述栅极图案电压Vgs为0-10伏之间，源漏图案电压Vds大于开启电压Vth时，所述第一及第二石墨烯发光单元1及2发出的光为红光；当Vgs为20-30伏之间，源漏图案电压Vds大于开启电压Vth时，所述第一及第二石墨烯发光单元1及2发出绿光；当Vgs为40-50伏之间，源漏图案电压Vds>Vth时，所述第一及第二石墨烯发光单元1及2发出蓝光。而通过改变Vds电压的大小可以改变所述第一及第二石墨烯发光单元1及2发出的光的强弱，从而可以调节灰阶。 根据所述第一及第二栅极图案11及21电压的不同，可以把所述第一及第二石墨烯发光单元1及2区分成RGB三种像素，RGB像素由绝缘层SiO2分割开。
为了避免所述石墨烯显示器两个显示面的发光颜色因栅极电场改变而受到影响，故在所述石墨烯显示器的第一及第二栅极图案11及21之间增加金属屏蔽层3，为了避免金属屏蔽层3和第一及第二栅极图案11及21之间发生漏电，故在所述第一栅极图案11与金属屏蔽层3、所述第二栅极图案21与金属屏蔽层3之间均设置了绝缘层。
所述石墨烯显示器通过设置双面显示的第一及第二石墨烯发光单元，使得所述石墨烯显示器结构简单，且两面的发光颜色不会因为栅极图案电场而发生改变，具有较稳定颜色和色彩还原性。
以上仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (11)

  1. 一种石墨烯显示器，其特征在于，所述石墨烯显示器包括相对设置的第一透明基板和第二透明基板、层叠设置于所述第一透明基板和所述第二透明基板之间的第一石墨烯发光单元和第二石墨烯发光单元，以及位于所述第一石墨烯发光单元和所述第二石墨烯发光单元之间且层叠设置的第一绝缘层、金属屏蔽层以及第二绝缘层，其中所述第一石墨烯发光单元包括设置于所述第一透明基板上且彼此间隔的第一源极图案和第一漏极图案、电性连接于所述第一源极图案和所述第一漏极图案之间的第一石墨烯发光图案、覆盖于所述第一石墨烯发光图案上的第三绝缘层以及设置于所述第三绝缘层的远离所述第一透明基板的一侧的第一栅极图案，所述第二石墨烯发光单元包括设置于所述第二透明基板上且彼此间隔的第二源极图案和第二漏极图案、电性连接于所述第二源极图案和所述第二漏极图案之间的第二石墨烯发光图案、覆盖于所述第二石墨烯发光图案上的第四绝缘层以及设置于所述第四绝缘层的远离所述第二透明基板的一侧的第二栅极图案，其中所述第一绝缘层、所述金属屏蔽层以及所述第二绝缘层位于所述第一栅极图案和所述第二栅极图案之间。
  2. 一种石墨烯显示器，其特征在于，所述石墨烯显示器包括层叠设置的第一石墨烯发光单元和第二石墨烯发光单元，以及位于所述第一石墨烯发光单元和所述第二石墨烯发光单元之间的金属屏蔽层。
  3. 根据权利要求2所述的石墨烯显示器，其特征在于，所述第一石墨烯发光单元包括第一栅极图案，所述第二石墨烯发光单元包括与所述第一栅极图案层叠设置的第二栅极图案，其中所述金属屏蔽层位于所述第一栅极图案和所述第二栅极图案之间。
  4. 根据权利要求3所述的石墨烯显示器，其特征在于，所述石墨烯显示器进一步包括用于电性隔离所述第一栅极图案与所述金属屏蔽层的第一绝缘层以及用于电性隔离所述第二栅极图案与所述金属屏蔽层的第二绝缘层。
  5. 根据权利要求4所述的石墨烯显示器，其特征在于，所述石墨烯显示器进一步包括相对设置的第一透明基板和第二透明基板，其中所述第一石墨烯发光单元和所述第二石墨烯发光单元层叠设置于所述第一透明基板和所述第二透明基板之间，且所述第一石墨烯发光单元的发光面与所述第一透明基板相邻设置，所述第二石墨烯发光单元的发光面与所述第二透明基板相邻设置。
  6. 根据权利要求5所述的石墨烯显示器，其特征在于，所述第一石墨烯发光单元包括设置于所述第一透明基板上且彼此间隔的第一源极图案和第一漏极图案、电性连接于所述第一源极图案和第一漏极图案之间的第一石墨烯发光图案、覆盖于所述第一石墨烯发光图案上的第三绝缘层，所述第一栅极图案设置于所述第三绝缘层的远离所述第一透明基板的一侧；
    所述第二石墨烯发光单元包括设置于所述第二透明基板上且彼此间隔的第二源极图案和第二漏极图案、电性连接于所述第二源极图案和第二漏极图案之间的第二石墨烯发光图案、覆盖于所述第二石墨烯发光图案上的第四绝缘层，所述第二栅极图案设置于所述第四绝缘层的远离所述第二透明基板的一侧。
  7. 根据权利要求6所述的石墨烯显示器，其特征在于，所述第三绝缘层进一步电性隔离相邻的所述第一石墨烯发光单元，所述第四绝缘层进一步电性隔离相邻的所述第二石墨烯发光单元。
  8. 根据权利要求5所述的石墨烯显示器，其特征在于，所述第一石墨烯发光单元固定于所述第一透明基板上，所述第二石墨烯发光单元固定于所述第二透明基板上，并通过对称方式固定于所述金属屏蔽层的两侧。
  9. 根据权利要求5所述的石墨烯显示器，其特征在于，所述第一透明基板及所述第二透明基板的材料为阻水阻氧隔水隔氧透明有机材质或玻璃或镍。
  10. 根据权利要求6所述的石墨烯显示器，其特征在于，所述第一石墨烯发光图案及所述第二石墨烯发光图案的材料为半导体还原氧化石墨烯。
  11. 根据权利要求6所述的石墨烯显示器，其特征在于，所述第一及第二源极图案和所述第一及第二漏极图案的材料为还原氧化石墨烯，所述第一及第二栅极图案的材料为氧化石墨烯或高反射率金属。
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