WO2015096308A1 - Oled显示面板及其制作方法 - Google Patents

Oled显示面板及其制作方法 Download PDF

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Publication number
WO2015096308A1
WO2015096308A1 PCT/CN2014/075546 CN2014075546W WO2015096308A1 WO 2015096308 A1 WO2015096308 A1 WO 2015096308A1 CN 2014075546 W CN2014075546 W CN 2014075546W WO 2015096308 A1 WO2015096308 A1 WO 2015096308A1
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WIPO (PCT)
Prior art keywords
light
display panel
pixel unit
oled display
region
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Application number
PCT/CN2014/075546
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English (en)
French (fr)
Inventor
李云飞
永山和由
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京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US14/416,257 priority Critical patent/US9450029B2/en
Publication of WO2015096308A1 publication Critical patent/WO2015096308A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/826—Multilayers, e.g. opaque multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED display panel and a method of fabricating the same.
  • Transparent display is a hot technical direction in recent years.
  • Reflective LCD Liquid Crystal Display
  • OL-ED Organic Light-Emitting Diode
  • the existing OLED display panel adopts an OLED array substrate having a structure of a white light OLED combined with a color filter layer, and has a low transmittance and a poor transparency display effect.
  • the embodiment of the invention provides an OLED display panel and a manufacturing method thereof, so as to solve the problem that the transparent display effect of the OLED display panel in the prior art is poor.
  • the present invention provides an OLED display panel comprising a plurality of pixel units, each of the pixel units comprising a light emitting region and a light transmitting region, wherein the light emitting region is provided with a white organic light emitting device and a filter layer;
  • the light transmissive area is not provided with a filter layer.
  • the cathode of the white organic light-emitting device adopts an opaque material or a translucent material, and the transparent region is not provided with a cathode of the white organic light-emitting device.
  • the transparent region is not provided with an anode and/or a light-emitting functional film layer of the white organic light-emitting device.
  • the transparent region is disposed in a region of the pixel unit where the thin film transistor device and the metal line are not disposed.
  • the locations and sizes of the light transmissive regions of the plurality of pixel units are the same.
  • the locations and/or sizes of the light transmissive regions of the plurality of pixel units are different.
  • the plurality of pixel units include a green pixel unit, a red pixel unit, and a blue image.
  • a cell unit an area of the transparent region of the green pixel unit is T e , an area of the transparent region of the red pixel unit is T R , and the transparent region of the blue pixel unit The area is T B , where T G >T R >T B .
  • the OLED display panel includes a column substrate
  • the array substrate includes a substrate substrate, a thin film transistor device, and the filter layer;
  • the thin film transistor device and the filter layer are disposed on the base substrate;
  • a flat layer is disposed over the thin film transistor device and the filter layer, and the white organic light-emitting device is disposed on the flat layer.
  • the OLED display panel includes an array substrate and a package substrate.
  • the array substrate includes a substrate substrate, a thin film transistor device, and the white organic light emitting device;
  • the thin film transistor device and the white organic light emitting device are disposed on the base substrate; and the filter layer is disposed at a position of the package substrate corresponding to the white organic light emitting device.
  • An embodiment of the present invention further provides a method for fabricating an OLED display panel, which is used to fabricate the above OLED display panel, and includes the following steps:
  • the filter layer and the white organic light emitting device are formed in a light emitting region of a pixel unit included in the OLED display panel, and the light transmissive region of the pixel unit does not form the filter layer.
  • the method for fabricating the OLED display panel according to the embodiment of the present invention further includes the following steps:
  • a cathode of the white organic light-emitting device is formed in a light-emitting region of the pixel unit, and a light-transmitting region of the pixel unit does not form the cathode.
  • the method for fabricating the OLED display panel according to the embodiment of the present invention further includes the following steps:
  • An anode of the white organic light emitting device and a light emitting functional film layer are formed in a light emitting region of the pixel unit, and the anode and the Z or the light emitting functional film layer are not formed in a light transmitting region of the pixel unit.
  • the method for fabricating the OLED display panel according to the embodiment of the present invention further includes the following steps:
  • the OLED display panel of the present invention and the manufacturing method thereof can increase the transmittance by providing no filter layer in the light transmissive area of the pixel unit, so that the effect of the transparent display is better, and Need extra process, just adjust the design to achieve better transparency
  • FIG. 1A is a schematic structural view of an OLED display panel according to an embodiment of the present invention
  • FIG. 1C is a schematic structural view of an OLED display panel according to another embodiment of the present invention
  • FIG. 1C is an OLED according to still another embodiment of the present invention
  • FIG. 2A, FIG. 2B, FIG. 2C, and FIG. 2D are schematic diagrams of a light transmitting region and a light emitting region included in a pixel unit of an OLED display surface according to an embodiment of the present invention.
  • 010 thin film transistor
  • 020 filter layer (CF, Color Filter)
  • 030 white organic light-emitting device
  • 031 anode of white organic light-emitting device
  • 032 cathode of white organic light-emitting device
  • 040 light-transmitting region
  • 050 light-emitting region
  • the OLED display panel of the embodiment of the present invention includes a plurality of pixel units, each of the pixel units includes a light emitting area and a light transmitting area, and the light emitting area is provided with a white light organic light emitting device and a filter layer; No filter layer is provided.
  • the OLED display panel of the present invention can increase the transmittance by not providing a filter layer in the light transmissive area of the pixel unit, and the effect of the transparent display is better, and no additional process is required, and the design needs to be appropriately adjusted. A better transparent display can be achieved.
  • the position, size and arrangement of the light transmission area can be determined according to specific design requirements, and there are no special requirements.
  • the pixel arrangement of the pixel unit may be a strip shape or other arrangement such as a font shape.
  • the transmittance is further increased.
  • a filter layer and a cathode of the white organic light-emitting device are not disposed in the light-transmitting region to ensure light transmission in the light-transmitting region is as shown in FIG.
  • the cathode of the white organic light-emitting device uses a transparent material or a translucent material, no filter layer is disposed in the light-transmitting region, but a cathode of the white-light organic light-emitting device may be disposed in the light-transmitting region.
  • the reason for this setting is: If the cathode of the white organic light-emitting device is not disposed in the light-transmitting region, the FMM (Fine Metal Mask) is required to block the light-transmitting region, and the cost of the FMM is high, so Cost problem, when the material used for the cathode of the white organic light-emitting device has high transparency, the cathode of the white organic light-emitting device can be disposed in the light-transmitting region, which can achieve both light transmittance and cost.
  • FMM Feine Metal Mask
  • a filter layer and a cathode of the white organic light-emitting device may not be disposed in the light-transmitting region to ensure light in the light-transmitting region. Transmittance.
  • the light transmitting region is not provided with an anode of the white organic light emitting device and a Z or a light emitting functional film layer to further improve the transmittance.
  • the light-emitting functional film layer of the white organic light-emitting device may include HIL (hole injection layer), HTL (hole transport layer), EML (light-emitting layer), ETL (electron transport layer), and EIL (electron injection layer) .
  • the transparent region is disposed in a region of the pixel unit where the thin film transistor device and the metal line are not disposed to avoid affecting the formation of the thin film transistor device and the metal line due to the provision of the light transmitting region.
  • the thin film transistor device and the metal line affect the transmission of light, so that the light transmitting region is provided in a region where the thin film transistor device and the metal line are not provided.
  • the position and size of the light transmitting regions of the plurality of pixel units may be the same, and the positions and/or sizes of the light transmitting regions of the plurality of pixel units may also be different.
  • the plurality of pixel units include a red pixel unit R, a green pixel unit G, and a blue pixel unit B, and the light transmissive area of the red pixel unit R is lower than the red pixel unit R.
  • the light transmissive area of the green pixel unit G is lower than the green pixel unit G, and the light transmissive area of the blue pixel unit B is lower than the blue pixel unit B;
  • the area of the light area is T R
  • the area of the light transmission area of the green pixel unit is T (3 )
  • the area of the light-transmitting region of the blue pixel unit is T B , Tc ⁇ T R ⁇ I B.
  • the transparent region of the red pixel unit R and the green pixel unit G are transparent.
  • the light area and the light transmission area of the blue pixel unit B are the same in position and size.
  • the plurality of pixel units include a red pixel unit 11, a green pixel unit G, and a blue pixel unit B, and a light transmissive area of the red pixel unit R is at a lower portion of the red pixel unit R, a light transmissive area of the green pixel unit G is lower than the green pixel unit G, a light transmissive area of the blue pixel unit B is lower than the blue pixel unit B; and the light transmissive area of the red pixel unit
  • the area is T R
  • the area of the transparent area of the green pixel unit is T e
  • the area of the transparent area of the blue pixel unit is T B , T e >T R >T B .
  • the green pixel unit G has the highest illumination intensity
  • the red pixel unit R has the second illumination intensity
  • the blue pixel unit B has the lowest illumination intensity
  • the green pixel unit The area of the light transmission area of G is set to be the largest
  • the area of the light transmission area of the red pixel unit B is second
  • the area of the light transmission area of the blue pixel unit B is set to be the smallest.
  • the plurality of pixel units include a red pixel unit 1, a green pixel unit G, and a blue pixel unit B, and a light transmissive area of the red pixel unit R is at an upper portion of the red pixel unit R,
  • the light transmissive area of the green pixel unit G is in the middle of the green pixel unit G
  • the light transmissive area of the blue pixel unit B is in the middle of the blue pixel unit B
  • the transparent area of the red pixel unit The area is T R
  • the area of the transparent area of the green pixel unit is T e
  • the area of the transparent area of the blue pixel unit is T B , T R > T B > T G .
  • the plurality of pixel units include a red pixel unit 1, a green pixel unit G, and a blue pixel unit B, and a light transmissive area of the red pixel unit R is at a lower portion of the red pixel unit R, a light transmissive area of the green pixel unit G is at an upper portion of the green pixel unit G, a light transmissive area of the blue pixel unit B is at a lower portion of the blue pixel unit B, and a light transmissive area of the red pixel unit
  • the area is T R
  • the area of the transparent region of the green pixel unit is T e
  • the area of the transparent region of the blue pixel unit is T B
  • T R T B T G .
  • the OLED display panel When the OLED display panel is a bottom emission OLED display panel, the OLED display panel includes a column substrate; the array substrate includes a substrate substrate, a thin film transistor device, and the filter thin film transistor device and the filter a layer is disposed on the base substrate; A flat layer is disposed over the thin film transistor device and the filter layer, and the white organic light emitting device is disposed on the flat layer.
  • the fabrication process is as follows: On the array substrate provided with the thin film transistor device, a BM (black matrix) and a filter layer are fabricated, and then a white organic light-emitting device is fabricated.
  • the OLED display panel When the OLED display panel is a top emission OLED display panel, the OLED display panel includes an array substrate and a package substrate;
  • the array substrate includes a substrate substrate, a thin film transistor device, and the white organic light emitting device;
  • the thin film transistor device and the white organic light emitting device are disposed on the base substrate; and the filter layer is disposed at a position of the package substrate corresponding to the white organic light emitting device.
  • the fabrication process is as follows: On the array substrate provided with the thin film transistor device, a white organic light-emitting device is fabricated, and then a filter layer is formed. Compared with the fabrication of the bottom-emitting OLED display panel, the order of the filter layer and the white organic light-emitting device is adjusted to meet the requirements of the top-emitting OLED display panel.
  • the method for fabricating an OLED display panel according to the embodiment of the present invention is used to fabricate the above OLED display panel, and includes the following steps:
  • the filter layer and the white organic light emitting device are formed in a light emitting region of a pixel unit included in the OLED display panel, and the light transmissive region of the pixel unit does not form the filter layer.
  • the method for fabricating the OLED display panel according to the embodiment of the present invention can increase the transmittance by forming a filter layer in the transparent region of the pixel unit, so that the effect of the transparent display is better, and no additional process is needed. , you can achieve a better transparent display by simply adjusting the design.
  • the method for fabricating the OLED display panel according to the embodiment of the present invention further includes the following steps:
  • a cathode of the white organic light-emitting device is formed in a light-emitting region of the pixel unit, and a light-transmitting region of the pixel unit does not form the cathode. By including this step, the transmittance can be further improved.
  • the method for fabricating the OLED display panel according to the embodiment of the present invention further includes the following An anode and a light-emitting functional film layer of the white organic light-emitting device are formed in a light-emitting region of the pixel unit, and the anode and/or the light-emitting functional film layer are not formed in a light-transmitting region of the pixel unit.
  • the transmittance can be further improved.
  • the method for fabricating an OLED display panel according to the embodiment of the present invention further includes the steps of: forming an anode, a light-emitting functional layer, and a cathode of the white organic light-emitting device in a light-emitting region of the pixel unit;
  • the light transmissive region of the pixel unit does not form the anode, the light-emitting functional film layer, and the cathode.
  • the OLED display panel according to the embodiment of the present invention may be an OLED display panel such as an a-Si TFT (amorphous silicon thin film transistor), an Oxide TFT (Oxide Thin Film Transistor) OLED display panel, and a poly Si TFT (polysilicon). Thin film transistor) An OLED display panel such as an OLED display panel fabricated on various array substrates.
  • a-Si TFT amorphous silicon thin film transistor
  • Oxide TFT Oxide Thin Film Transistor
  • poly Si TFT polysilicon
  • Thin film transistor An OLED display panel such as an OLED display panel fabricated on various array substrates.
  • a method of fabricating an OLED display panel includes: fabricating a thin film transistor device on a substrate; fabricating a filter layer on a substrate on which the thin film transistor device is formed; forming a thin film transistor device and a filter layer A white organic light-emitting device is fabricated on the substrate.
  • the base substrate is made of a transparent village.
  • the transparent material may be, for example, glass or quartz, or may be a resin material having good light transmittance, such as an acrylic resin, a base acrylic resin, or the like.
  • the thin film transistor device can be either a top-type or a bottom-gate type. The embodiment of the present invention is described by taking a bottom gate type thin film transistor as an example.
  • a drain layer pattern including a gate electrode, a gate insulating layer, an active layer pattern, a source/drain electrode layer pattern including a source and a drain, and a passivation layer pattern are sequentially formed on the base substrate to form a thin film transistor device.
  • a filter layer is formed in the light-emitting regions of the plurality of pixel units, and the light-transmitting region does not form a filter layer.
  • the filter layer can be made of a red, green, blue or yellow organic resin material.
  • the formation of the filter layer can be performed by exposure, development, or 3 ⁇ 4 inkjet printing, thermal transfer, and the like. It suffices that the light-transmitting region of the pixel unit does not form a filter layer, and the light-emitting region forms a filter layer.
  • a red resin material may be applied first, and exposed by a mask to form an exposed area and a non-exposed area.
  • the red resin in the exposed area remains, that is, a red filter layer forming a light-emitting area of the red pixel unit, non-exposure
  • the red resin layer of the area is removed.
  • a green filter layer of the green pixel unit light-emitting area and a blue filter layer of the blue pixel unit light-emitting area may be formed.
  • a black matrix (BM) can also be formed before the formation of the filter layer.
  • the black matrix can be disposed between adjacent pixel units to prevent the light emitting area of the adjacent pixel unit The emitted light mixes and suppresses light leakage.
  • the black matrix may also be disposed in a region other than the light-emitting region and the light-transmitting region of the pixel unit, for example, in a region where the thin film transistor device is located and a region where the metal line is located.
  • a flat layer is formed on the substrate on which the thin film transistor device and the filter layer are formed, and the flat layer covers the thin film transistor device and the filter layer.
  • the light transmissive area of the pixel unit may not be provided with a flat layer to further increase the transmittance of the light transmissive area of the pixel unit.
  • a white organic light-emitting device is formed over the planar layer, including an anode forming the white organic light-emitting device, a light-emitting functional film layer, and a cathode of the white organic light-emitting device.
  • a Pixel Define Layer may also be formed before the formation of the white organic light-emitting device.
  • the anode can be a transparent conductive material with a high work function, such as indium tin oxide ( ⁇ ' ⁇ ).
  • the anode can be formed by sputtering, evaporation, ink jet printing or the like.
  • the anode is electrically connected to the drain of the thin film transistor, for example, the anode is connected to the drain of the thin film transistor through a via of a passivation layer and a via.
  • Forming a light-emitting functional film layer over the anode may include forming a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL).
  • HIL hole injection layer
  • HTL hole transport layer
  • EML emission layer
  • ETL electron transport layer
  • EIL electron injection layer
  • a cathode of the white organic light-emitting device is formed over the light-emitting functional film layer.
  • the light transmitting region of the pixel unit is not provided with a cathode.
  • 3 ⁇ 4 FMM Fe Metal Mask
  • the light-transmissive area of the pixel unit does not form a cathode layer, thereby further improving the light penetration in the light-transmitting region. Over rate.
  • the light transmissive area of the pixel unit may not be provided with the anode and the light-emitting functional film layer, so that the transmittance of the light-transmitting area is further improved.
  • a high-precision metal mask can be used to form the anode and the light-emitting functional film layer.

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Abstract

一种OLED显示面板及其制作方法。OLED显示面板包括多个像素单元，每一像素单元包括发光区（050）和透光区（040），发光区（050）设置有白光有机发光器件（030）和滤光层（020）；透光区（040）不设置有滤光层（020）。在滤光层（020）上增加专门的透光区（040），从而能够增加透过率，使得透明显示的效果更好，而且不需要额外的工艺，只需适当调整设计则可以实现更好的透明显示。

Description

OLED显示面板及其制作方法
本发明涉及显示技术领域， 尤其涉及一种 OLED 显示面板及其制作方 法。
透明显示是近几年较热点的技术方向， 反射式 LCD ( Liquid Crystal Display, 液晶显示器) 和 OL— ED (Organic Light-Emitting Diode, 有机发光二 极管） 都可以实现透明显示， 其中 OLED透明显示效果更佳。
现有的 OLED显示面板采用具有白光 OLED结合彩色滤光层而成的结构 的 OLED阵列基板， 其透过率低， 透明显示的效果差。
本发明实施例提供了一种 OLED显示面板及其制作方法， 以解决现有技 术中 OLED显示面板透明显示效果差的问题。
为了达到上述目的， 本发明提供了一种 OLED显示面板， 包括多个像素 单元， 每一所述像素单元包括发光区和透光区， 所述发光区设置有白光有机 发光器件和滤光层；
所述透光区不设置有滤光层。
可选的， 所述白光有机发光器件的阴极采用不透明材料或半透明材料， 所述透光区不设置有白光有机发光器件的阴极。
可选的， 所述透光区不设置有白光有机发光器件的阳极和 /或发光功能 膜层。
可选的， 所述透光区设置于所述像素单元中未设有薄膜晶体管器件和金 属线的区域。
可选的， 所述多个像素单元的所述透光区的位置和大小相同。
可选的， 所述多个像素单元的透光区的位置和 /或大小不同。
可选的， 所述多个像素单元包括绿色像素单元、 红色像素单元和蓝色像 素单元， 所述绿色像素单元的所述透光区的面积为 Te， 所述红色像素单元的 所述透光区的面积为 TR， 所述蓝色像素单元的所述透光区的面积为 TB, 其 中 TG>TR>TB。
可选的， 所述 OLED显示面板包括 列基板；
所述阵列基板包括衬底基板、 薄膜晶体管器件和所述滤光层；
所述薄膜晶体管器件和所述滤光层设置于所述衬底基板上；
所述薄膜晶体管器件和所述滤光层上方设置有平坦层， 所述平坦层上设 置所述白光有机发光器件。
可选的， 所述 OLED显示面板包括阵列基板和封装基板，
所述阵列基板包括衬底基板、 薄膜晶体管器件和所述白光有机发光器 件；
所述薄膜晶体管器件和所述白光有机发光器件设置于所述衬底基板上； 在所述封装基板的与所述白光有机发光器件相对应的位置上设置有所述 滤光层。
本发明实施例还提供了一种 OLED显示面板的制作方法， 用于制作上述 的 OLED显示面板， 包括以下步骤：
在所述 OLED显示面板包括的像素单元的发光区形成所述滤光层和所述 白光有机发光器件， 所述像素单元的透光区不形成所述滤光层。
可选的， 本发明实施例所述的 OLED显示面板的制作方法， 还包括以下 步骤：
在所述像素单元的发光区形成所述白光有机发光器件的阴极， 所述像素 单元的透光区不形成所述阴极。
可选的， 本发明实施例所述的 OLED显示面板的制作方法， 还包括以下 步骤：
在所述像素单元的发光区形成所述白光有机发光器件的阳极和发光功能 膜层， 在所述像素单元的透光区不形成所述阳极和 Z或所述发光功能膜层。
可选的， 本发明实施例所述的 OLED显示面板的制作方法， 还包括以下 步骤：
在所述像素单元的发光区形成所述白光有机发光器件的阳极和发光功能 膜层， 在所述像素单元的透光区不形成所述阳极和 /或所述发光功能膜层。 与现有技术相比， 本发明的 OLED显示面板及其制作方法， 通过在像素 单元的透光区不设置滤光层， 从而能够增加透过率， 使得透明显示的效果更 好， 而旦不需要额外的工艺， 只需适当调整设计则可以实现更好的透明显
图 1A是本发明一实施例所述的 OLED显示面板的结构示意图； 图 IB是本发明另一实施例所述的 OLED显示面板的结构示意图； 图 1C是本发明又一实施例所述的 OLED显示面板的结构示意图； 图 2A、 图 2B、 图 2C、 图 2D分别是本发明实施例的 OLED显示面 像素单元所包括的透光区和发光区的示意图。
图标记说明
010： 薄膜晶体管， 020: 滤光层 （CF， Color Filter) ，
030： 白光有机发光器件， 031 : 白光有机发光器件的阳极，
032： 白光有机发光器件的阴极， 040: 透光区， 050: 发光区。
本发明实施例所述的 OLED显示面板包括多个像素单元， 每一所述像素 单元包括发光区和透光区， 所述发光区设置有白光有机发光器件和滤光层； 所述透光区不设置有滤光层。
本发明所述的 OLED 显示面板通过在像素单元的透光区不设置有滤光 层， 从而能够增加透过率， 透明显示的效果更好， 而且不需要额外的工艺， 只需适当调整设计则可以实现更好的透明显示。
在具体实施时， 透光区的位置、 大小和排列方式可以根据具体设计需求 确定， 没有特殊的要求。 像素单元的像素排列方式可以是条状， 也可以是品 字形等其他排列方式。
优选的， 当所述白光有机发光器件的阴极采用不透明材料或半透明材 料， 所述透光区不设置有白光有机发光器件的阴极时， 透过率进一步增加。 如图 1A所示， 当所述白光有机发光器件的阴极使用不透明材料时， 在 透光区不设置滤光层和白光有机发光器件的阴极， 以保证透光区的光线透过 如图 IB 所示， 当所述白光有机发光器件的阴极使用透明材料或半透明 材料时， 在透光区不设置滤光层， 但是在透光区可以设置白光有机发光器件 的阴极。 这样设置的原因是： 如果在透光区不设置白光有机发光器件的阴 极， 则需要使用 FMM (Fine Metal Mask, 高精度金属掩模）挡住透光区， 而 FMM 的成本较高， 因此考虑到成本问题， 当所述白光有机发光器件的阴极 使用的材料透明度较高时， 可以在透光区设置白光有机发光器件的阴极， 这 样可以兼顾透光率和成本。
如图 1C 所示， 当所述白光有机发光器件的阴极使用透明材料或半透明 材料时， 也可以在透光区不设置滤光层和白光有机发光器件的阴极， 以保证 透光区的光线透过率。
优选的， 所述透光区不设置有白光有机发光器件的阳极和 Z或发光功能 膜层， 以进一步提高透过率。
例如， 所述白光有机发光器件的发光功能膜层可以包括 HIL (空穴注入 层） 、 HTL (空穴传输层） 、 EML (发光层） 、 ETL (电子传输层） 和 EIL (电子注入层） 。
可选的， 所述透光区设置于所述像素单元中未设有薄膜晶体管器件和金 属线的区域， 以避免因设置透光区而影响薄膜晶体管器件和金属线的形成。 薄膜晶体管器件和金属线会影响光的透过， 因此透光区设置于未设有薄膜晶 体管器件和金属线的区域。
可选的， 所述多个像素单元的所述透光区的位置和大小可以相同， 所述 多个像素单元的透光区的位置和 /或大小也可以不同。
具体的， 如图 2A所示， 所述多个像素单元包括红色像素单元 R、 绿色 像素单元 G和蓝色像素单元 B , 所述红色像素单元 R的透光区在所述红色像 素单元 R下部， 所述绿色像素单元 G的透光区在所述绿色像素单元 G下部， 所述蓝色像素单元 B的透光区在所述蓝色像素单元 B下部； 所述红色像素单 元的所述透光区的面积为 TR， 所述绿色像素单元的所述透光区的面积为 T(3， 所述蓝色像素单元的所述透光区的面积为 TB， Tc^TR^IB。 在图 2A中， 红色像素单元 R的透光区、 绿色像素单元 G的透光区和蓝色像素单元 B的透 光区的位置和大小相同。
如图 2B所示， 所述多个像素单元包括红色像素单元11、 绿色像素单元 G 和蓝色像素单元 B， 所述红色像素单元 R的透光区在所述红色像素单元 R下 部， 所述绿色像素单元 G的透光区在所述绿色像素单元 G下部， 所述蓝色像 素单元 B的透光区在所述蓝色像素单元 B下部； 所述红色像素单元的所述透 光区的面积为 TR， 所述绿色像素单元的所述透光区的面积为 Te, 所述蓝色 像素单元的所述透光区的面积为 TB， Te>TR>TB。 由于在大多数现有的 OLED显示面板中， 绿色像素单元 G的发光强度最大， 红色像素单元 R的发 光强度次之， 蓝色像素单元 B的发光强度最小， 因此在图 2B中， 绿色像素 单元 G的透光区面积设置为最大， 红色像素单元 B的透光区面积次之， 蓝色 像素单元 B的透光区面积设置为最小。
如图 2C所示， 所述多个像素单元包括红色像素单元1、 绿色像素单元 G 和蓝色像素单元 B , 所述红色像素单元 R的透光区在所述红色像素单元 R上 部， 所述绿色像素单元 G的透光区在所述绿色像素单元 G中部， 所述蓝色像 素单元 B的透光区在所述蓝色像素单元 B中部； 所述红色像素单元的所述透 光区的面积为 TR， 所述绿色像素单元的所述透光区的面积为 Te， 所述蓝色 像素单元的所述透光区的面积为 TB, TR > TB > TG。
如图 2D所示， 所述多个像素单元包括红色像素单元1、 绿色像素单元 G 和蓝色像素单元 B , 所述红色像素单元 R的透光区在所述红色像素单元 R下 部， 所述绿色像素单元 G的透光区在所述绿色像素单元 G上部， 所述蓝色像 素单元 B的透光区在所述蓝色像素单元 B下部； 所述红色像素单元的所述透 光区的面积为 TR， 所述绿色像素单元的所述透光区的面积为 Te， 所述蓝色 像素单元的所述透光区的面积为 TB, TR = TB TG。
当所述 OLED显示面板为底发射 OLED显示面板时， 所述 OLED显示面 板包括 列基板； 所述阵列基板包括衬底基板、 薄膜晶体管器件和所述滤光 所述薄膜晶体管器件和所述滤光层设置于所述衬底基板上； 所述薄膜晶体管器件和所述滤光层上方设置有平坦层， 所述平坦层上设 置所述白光有机发光器件。
制作底发射 OLED显示面板时， 制作过程为： 在设置有薄膜晶体管器件 的阵列基板上， 制作 BM (黑矩阵） 和滤光层， 然后再制作白光有机发光器 件。
当所述 OLED显示面板为顶发射 OLED显示面板时， 所述 OLED显示面 板包括阵列基板和封装基板；
所述阵列基板包括衬底基板、 薄膜晶体管器件和所述白光有机发光器 件；
所述薄膜晶体管器件和所述白光有机发光器件设置于所述衬底基板上； 在所述封装基板的与所述白光有机发光器件相对应的位置上设置有所述 滤光层。
制作底发射 OLED显示面板时， 制作过程为： 在设置有薄膜晶体管器件 的阵列基板上， 制作白光有机发光器件， 然后再制作滤光层。 与制作底发射 OLED 显示面板相比， 调整了制作滤光层和白光有机发光器件的顺序， 以满 足顶发射 OLED显示面板的需求。
本发明实施例所述的 OLED 显示面板的制作方法， 用于制作上述的 OLED显示面板， 包括以下步骤：
在所述 OLED显示面板包括的像素单元的发光区形成所述滤光层和所述 白光有机发光器件， 所述像素单元的透光区不形成所述滤光层。
本发明实施例所述的 OLED显示面板的制作方法， 通过在像素单元的透 光区不形成滤光层， 丛而能够增加透过率， 使得透明显示的效果更好， 而且 不需要额外的工艺， 只需适当调整设计则可以实现更好的透明显示。
可选的， 本发明实施例所述的 OLED显示面板的制作方法， 还包括以下 步骤：
在所述像素单元的发光区形成所述白光有机发光器件的阴极， 所述像素 单元的透光区不形成所述阴极。 通过包括该步骤， 可以进一步提高透过率。
可选的， 本发明实施例所述的 OLED显示面板的制作方法， 还包括以下 在所述像素单元的发光区形成所述白光有机发光器件的阳极和发光功能 膜层， 在所述像素单元的透光区不形成所述阳极和 /或所述发光功能膜层。 通过包括该步骤， 可以进一步提高透过率。
可选的， 本发明实施例所述的 OLED显示面板的制作方法， 还包括以下 步骤： 在所述像素单元的发光区形成所述白光有机发光器件的阳极、 发光功 能膜层和阴极， 在所述像素单元的透光区不形成所述阳极、 发光功能膜层和 阴极。 通过包括该步骤， 可以进一步提高所述透光区的透过率。
在具体实施时， 本发明实施例所述的 OLED 显示面板可以为诸如 a- Si TFT (非晶硅薄膜晶体管） OLED显示面板， Oxide TFT (氧化物薄膜晶体管） OLED显示面板， poly Si TFT (多晶硅薄膜晶体管） OLED显示面板等在各 种阵列基板上制作的 OLED显示面板。
在本发明一个实施例中， OLED 显示面板的制作方法包括： 在衬底基板 上制作薄膜晶体管器件； 在形成有薄膜晶体管器件的基板上制作滤光层； 在 形成有薄膜晶体管器件和滤光层的基板上制作白光有机发光器件。
衬底基板用透明村质制成。 所述透明材质， 例如， 可以是玻璃、 石英， 也可以是透光性良好的树脂材料， 如丙烯酸树脂、 ¥基丙烯酸树脂等。 薄膜 晶体管器件可以是顶 »型， 也可以是底栅型。 本发明实施例以底栅型薄膜晶 体管为例说明。 在衬底基板上依次形成包括栅极的 »极层图形、 栅极绝缘 层、 有源层图形、 包括源极和漏极的源漏电极层图形和钝化层图形， 以形成 薄膜晶体管器件。
在多个像素单元的发光区形成滤光层， ― §透光区不形成滤光层。 滤光层 可以采 能够透过红色、 绿色、 蓝色或黄色的有机树脂材料。 形成滤光层可 以采用曝光、 显影工艺， 也可以采) ¾喷墨打印、 热转印等工艺。 只要保证像 素单元的透光区不形成滤光层， 而发光区形成滤光层即可。 例如， 可以先涂 覆一层红色树脂材料， 利用掩模曝光， 形成曝光区和非曝光区， 显影后， 曝 光区的红色树脂保留， 即形成红色像素单元发光区的红色滤光层， 非曝光区 红色树脂层被去除。 同理， 可以形成绿色像素单元发光区的绿色滤光层、 蓝 色像素单元发光区的蓝色滤光层。 在形成滤光层之前还可以形成黑矩阵 (BM)。 黑矩阵可以设置在相邻像素单元之间， 防止相邻像素单元的发光区 发出的光线混色， 同时抑制漏光。 黑矩阵也可以设置在像素单元的发光区和 透光区以外的区域， 例如设置在薄膜晶体管器件所在区域、 金属线所在区 域。
在形成有薄膜晶体管器件和滤光层的基板上形成平 层， 平坦层覆盖所 述薄膜晶体管器件和所述滤光层。 像素单元的透光区可以不设置平坦层， 以 进一步提高像素单元透光区的透过率。
在平坦层之上形成白光有机发光器件， 包括形成白光有机发光器件的阳 极、 发光功能膜层和白光有机发光器件的阴极。 在形成白光有机发光器件之 前， 还可以形成像素界定层（Pixel Define Layer)。 其中， 阳极可以釆^高功 函数的透明导电材料， 例如氧化铟锡（ΙΊ'Ο)。 可以通过溅射、 蒸镀、 喷墨打 印等方法形成阳极。 阳极与薄膜晶体管的漏极电连接， 例如， 阳极通过钝化 层和平 层的过孔与薄膜晶体管的漏极连接。 阳极之上形成发光功能膜层， 可以包括形成空穴注入层（HIL) 、 空穴传输层（HTL) 、 发光层（EML) 、 电子传输层 （ETL)和电子注入层 （EIL) 。 发光功能膜层之上形成白光有机 发光器件的阴极。 本实施例中像素单元的透光区不设置阴极。 形成阴极时可 以采) ¾ FMM (Fine Metal Mask, 高精度金属掩模）蒸铍阴极.材料， 这样， 像 素单元的透光区不形成阴极村料层， 从而进一步提高光线在透光区的透过 率。 本实施例中像素单元的透光区也可以不设置阳极和发光功能膜层， 这样 透光区的透过率将进一步提高。 形成阳极和发光功能膜层可以采用高精度金 属掩模。
以上所述是本发明的优选实施方式， 应当指出， 对于本技术领域的普通 技术人员来说， 在不脱离本发明所述原理的前提下， 还可以作出若干改进和 润饰， 这些改进和润饰也应视为本发明的保护范围。

Claims

1 . 一种 OLED显示面板， 包括多个像素单元， 其特征在于， 每一所述像 素单元包括发光区和透光区， 所述发光区设置有白光有机发光器件和滤光 所述透光区不设置有滤光层。
2. 如权利要求〗所述的 OLED显示面板， 其特征在于， 所述白光有机发 光器件的阴极采用不透明材料或半透明材料， 所述透光区不设置有白光有机 发光器件的阴极。
3. 如权利要求 1或 2所述的 OLED显示面板， 其特征在于， 所述透光区 不设置有白光有机发光器件的阳极和 /或发光功能膜层。
4. 如权利要求 1至 3中任一权利要求所述的 OLED显示面板， 其特征在 于， 所述透光区设置于所述像素单元中未设有薄膜晶体管器件和金属线的区
5. 如权利要求 1至 4中任一权利要求所述的 OLED显示面板， 其特征在 于， 所述多个像素单元的所述透光区的位置和大小相同。
6. 如权利要求 1至 4中任一权利要求所述的 OLED显示面板， 其特征在 于， 所述多个像素单元的透光区的位置和 /或大小不同。
7. 如权利要求 1至 4、 6中任一权利要求所述的 OLED显示面板， 其特 征在于， 所述多个像素单元包括绿色像素单元、 红色像素单元和蓝色像素单 元， 所述绿色像素单元的所述透光区的面积为 所述红色像素单元的所述 透光区的面积为 TR， 所述蓝色像素单元的所述透光区的面积为 TB， 其中
。
8. 如权利要求 1至 7中任一权利要求所述的 OLED显示面板， 其特征在 于， 所述 OLED显示面板包括阵列基板；
所述阵列基板包括衬底基板、 多个薄膜晶体管器件和所述滤光层； 所述薄膜晶体管器件和所述滤光层设置于所述衬底基板上；
所述薄膜晶体管器件和所述滤光层上方设置有平坦层， 所述平坦层上设 置所述白光有机发光器件。
9. 如权利要求 1至 7中任一权利要求所述的 OLED显示面板， 其特征在 于， 所述 OLED显示面板包括阵列基板和封装基板，
所述阵列基板包括衬底基板、 薄膜晶体管器件和所述白光有机发光器 件；
所述薄膜晶体管器件和所述白光有机发光器件设置于所述衬底基板上； 在所述封装基板的与所述白光有机发光器件相对应的位置上设置有所述
\ B卑 ϊ^ί
10. —种 OLED显示面板的制作方法， ^于制作如权利要求 1至 9中任 一权利要求所述的 OLED显示面板， 其特征在于， 包括以下步骤：
在所述 OLED显示面板包括的像素单元的发光区形成所述滤光层和所述 白光有机发光器件， 所述像素单元的透光区不形成所述滤光层。
11. 如权利要求 10所述的 OLED显示面板的制作方法， 其特征在于， 还 包括以下歩骤：
在所述像素单元的发光区形成所述白光有机发光器件的阴极， 所述像素 单元的透光区不形成所述阴极。
12. 如权利要求 10所述的 OLED显示面板的制作方法， 其特征在于， 还 包括以下歩骤：
在所述像素单元的发光区形成所述白光有机发光器件的阳极、 发光功能 膜层和阴极， 在所述像素单元的透光区不形成所述阳极、 发光功能膜层和阴 极。
13. 如权利要求 10所述的 OLED显示面板的制作方法， 其特征在于， 还 包括以下步骤：
在所述像素单元的发光区形成所述白光有机发光器件的阳极和发光功能 膜层， 在所述像素单元的透光区不形成所述阳极和 Z或所述发光功能膜层。
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