WO2015062271A1 - 一种底发射基板、显示装置及该基板的制造方法 - Google Patents

一种底发射基板、显示装置及该基板的制造方法 Download PDF

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Publication number
WO2015062271A1
WO2015062271A1 PCT/CN2014/079287 CN2014079287W WO2015062271A1 WO 2015062271 A1 WO2015062271 A1 WO 2015062271A1 CN 2014079287 W CN2014079287 W CN 2014079287W WO 2015062271 A1 WO2015062271 A1 WO 2015062271A1
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Prior art keywords
layer
black matrix
matrix layer
gate
opening areas
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PCT/CN2014/079287
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English (en)
French (fr)
Inventor
舒适
谷敬霞
孔祥春
张锋
惠官宝
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京东方科技集团股份有限公司
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Priority to US14/417,355 priority Critical patent/US9583646B2/en
Publication of WO2015062271A1 publication Critical patent/WO2015062271A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers

Definitions

  • Embodiments of the present disclosure relate to a bottom emission substrate, a display device, and a method of fabricating the substrate. Background technique
  • OLED Organic Light Emitting Devices
  • a bottom-emitting OLED panel known by the inventors which uses a white light OLED and a color filter integrated array substrate (COA) technology, that is, a bottom emission OLED panel, a white light OLED and a COA substrate.
  • the fabrication process of the bottom-emitting OLED panel comprises: first performing an Array process on a glass substrate to form an array substrate unit, and then performing a color filter process on the array substrate unit to integrate the color filter on the array substrate unit The above two steps can form a COA substrate, and then an electroluminescence layer (hereinafter referred to as an EL layer) is formed on the color filter, and finally an OLED panel is formed by packaging; the light emitted by the EL layer passes through the color filter.
  • the array substrate unit and the glass substrate are received by an observer, and thus, the above OLED panel is referred to as a bottom emission structure OLED panel or a bottom emission OLED panel.
  • a polarizer In order to reduce the influence of reflected ambient light, a polarizer is usually attached to the side of the bottom emission OLED panel, but the polarizer filters about 60% of the emitted light, resulting in low light utilization; if no polarized light is attached Although the utilization ratio of light is high, the metal layer such as the gate layer, the source/drain layer, and the active layer in the COA substrate reflects ambient light, thereby reducing the contrast and color gamut of the bottom-emitting OLED panel, and affecting the bottom emission. The display effect of the OLED panel. Therefore, how to provide a bottom-emitting substrate having high light utilization efficiency and mitigating the influence of ambient light reflection has become an urgent problem to be solved by those skilled in the art. Public content
  • One of the objects of the present disclosure is to improve the light utilization efficiency in the bottom-emitting OLED panel and to reduce the influence of ambient light reflection, thereby improving the display effect of the display device.
  • a bottom emission substrate including:
  • a black matrix layer disposed on the base substrate and having a plurality of open regions and a plurality of non-open regions;
  • the plurality of open regions are arranged in an array, and the plurality of non-open regions are spaced apart between the plurality of non-open regions.
  • the array substrate unit includes:
  • a gate line and a gate layer disposed on the black matrix layer, and a projection of the gate line and the gate layer on the black matrix layer is located in a plurality of non-opening regions of the black matrix layer;
  • An active layer disposed on the gate insulating layer, and a projection of the active layer on the black matrix layer is located in a plurality of non-open regions of the black matrix layer;
  • a data line and a source/drain layer disposed on the active layer, and a projection of the data line and the source/drain layer on the black matrix layer is located in a plurality of non-open regions of the black matrix layer Inside;
  • the bottom emission substrate further includes: a color filter disposed on the array substrate unit, and a transparent electrode layer disposed on the color filter.
  • At least one embodiment of the present disclosure also provides a display device including a bottom emission substrate having the above technical features.
  • At least one embodiment of the present disclosure also provides a method of fabricating a bottom emission substrate, comprising: forming a black matrix layer having a plurality of open regions and a plurality of non-open regions on a base substrate; on the black matrix layer An array substrate unit is formed, and projections of respective metal layers in the array substrate unit on the black matrix layer are located in a plurality of non-opening regions of the black matrix layer.
  • forming a black matrix layer having a plurality of open regions and a plurality of non-open regions on the base substrate includes:
  • forming the array substrate unit on the black matrix layer includes: forming a patterned gate line and a gate layer on the black matrix layer, and the gate line and the gate a projection of the layer on the black matrix layer is located in a plurality of non-opening regions of the black matrix layer;
  • the method for manufacturing the bottom emitting substrate further includes:
  • a black matrix layer is disposed between the substrate substrate and the array substrate unit, the black matrix layer having a plurality of open regions and a plurality of non-open regions, and the array substrate unit
  • Each of the metal layers projected on the black matrix layer falls in a plurality of non-opening regions of the black matrix layer. Because the black matrix layer has low reflection characteristics, each metal layer can be prevented from reflecting ambient light, and the ambient light reflection can be reduced. Influence, thereby improving contrast and color gamut. In addition, the polarizer is no longer needed, and the utilization of light can be improved, thereby improving the display effect of the display device.
  • FIG. 1 is a transverse cross-sectional view of a bottom emitting substrate according to an embodiment of the present disclosure
  • FIG. 2 is a longitudinal cross-sectional view of a bottom emitting substrate according to an embodiment of the present disclosure
  • Figure 3 is a plan view of the black matrix layer of Figure 2;
  • FIG. 4 is a flow chart of a method for fabricating a bottom emitting substrate according to an embodiment of the present disclosure
  • FIG. 5 is a cross-sectional view of a bottom emitting substrate formed with a black matrix layer
  • FIG. 6 is a cross-sectional view of a substrate on which an array substrate unit is formed on a black matrix layer. detailed description
  • embodiments of the present disclosure provide a bottom emission substrate, and a black is disposed between the substrate substrate and the array substrate unit.
  • a matrix layer the black matrix layer has a plurality of open regions and a plurality of non-open regions, and each of the metal layers in the array substrate unit is projected on the black matrix layer and falls in a plurality of non-open regions of the black matrix layer.
  • the black matrix layer has the characteristics of low reflection, which can reduce the influence of ambient light reflection, thereby improving the contrast and color gamut; and does not require a polarizer, thereby improving the utilization of light and improving the display effect of the display device.
  • FIG. 1 is a transverse cross-sectional view of a bottom emitting substrate according to an embodiment of the present disclosure
  • FIG. 2 is a longitudinal cross-sectional view of a bottom emitting substrate according to an embodiment of the present disclosure
  • 3 is a top view of a black matrix layer in FIG. 2.
  • the bottom emission substrate provided by the embodiment of the present disclosure includes: a base substrate 1; a black matrix layer 2 disposed on the base substrate 1 having a plurality of open regions and a plurality of non-open regions; and a black matrix layer 2 disposed on the black matrix layer 2
  • the array substrate unit, the projection of each metal layer in the array substrate unit on the black matrix layer 2 is located in a plurality of non-opening regions of the black matrix layer 2.
  • a black matrix layer 2 is disposed between the base substrate 1 and the array substrate unit, the black matrix layer 2 has a plurality of open regions and a plurality of non-open regions, and each metal layer in the array substrate unit is in a black matrix
  • the projection on layer 2 is located in a plurality of non-opening regions of black matrix layer 2, as shown in Fig. 2, the hatched region is a non-opening region, and the non-hatched region is an open region.
  • the pattern shape of the non-opening region in the black matrix layer 2 is a superposition of the pattern shapes of all the metal layers such as the gate lines and the gate layers, the data lines, and the source and drain layers.
  • the pattern of the black matrix layer 2 exists directly under all the metal layers; that is, the structure of the black matrix layer 2 is determined by the projected shape of each metal layer in the array substrate unit on the base substrate 1.
  • the projection shapes of the respective metal layers on the base substrate 1 are a plurality of rectangles arranged in an array, and each of the non-opening regions in the black matrix layer 2 is also rectangular in shape and arranged in an array.
  • a plurality of non-opening regions are arranged in an array, and a plurality of opening regions are spaced apart between the plurality of non-opening regions.
  • Each metal layer in the array substrate unit is projected on the black matrix layer 2 and falls in a plurality of non-opening regions of the black matrix layer 2. Since the black matrix layer 2 material has low reflection characteristics, each metal layer can be prevented from reflecting ambient light. , can reduce the impact of ambient light reflection, therefore, can improve the contrast and color gamut. In addition, since the polarizer is no longer needed, the utilization of light is improved. Therefore, the display device using the above-described bottom emission substrate can significantly improve the display effect of the display device.
  • each pixel unit corresponds to two thin film transistors (TFTs), but is not limited thereto, and each pixel unit of the bottom emitting substrate may also be two
  • TFTs thin film transistors
  • the array substrate unit includes: a gate line and a gate layer 3 disposed on the black matrix layer 2, and projections of the gate lines and the gate layer 3 on the black matrix layer 2 are located in a plurality of non-black matrix layers 2 In the opening region; the gate insulating layer 4 covering the gate layer 3; the active layer 5 disposed on the gate insulating layer 4, the projection of the active layer 5 on the black matrix layer 2 is located in the black matrix layer 2 In the non-opening region; the data line and the source/drain layer 6 disposed on the active layer 5, the projection of the data line and the source/drain layer 6 on the black matrix layer 2 are located in a plurality of non-open regions of the black matrix layer 2 And a passivation layer 7 covering the source and drain layers 6.
  • the bottom emission substrate may further include: a color filter 8 disposed on the array substrate unit, and a transparent electrode layer 10 disposed on the color filter 8.
  • the color filter 8 is on the passivation layer 7, and the transparent electrode layer 10 is on the color filter 8.
  • the transparent electrode layer 10 may be a cathode layer or an anode layer of an OLED; such a bottom emission substrate is also referred to as a Color Filter On Array, that is, a COA substrate. It is worth mentioning that the above-mentioned bottom emitting substrate is required to provide a color filter in the bottom emitting substrate to realize color display when using a white OLED, and does not need to be in the bottom emitting substrate when the bottom emitting substrate is colored OLED. Color display can be achieved by setting a color filter.
  • the display device may be any product or component having a display function, such as a mobile phone, a tablet, a television, a display, a notebook, a digital photo frame, a navigator, or the like.
  • FIG. 4 is a flowchart of a method for manufacturing a bottom emitting substrate according to an embodiment of the present disclosure
  • FIG. 5 is a cross-sectional view of a bottom emitting substrate formed with a black matrix layer
  • FIG. 6 is a black matrix. Formed on the layer A cross-sectional view of a substrate of an array substrate unit.
  • a method of fabricating a bottom emission substrate according to at least one embodiment of the present disclosure includes:
  • Step 101 forming a black matrix layer 2 having a plurality of open regions and a plurality of non-open regions on the base substrate 1, as shown in FIG.
  • Step 102 Form an array substrate unit on the black matrix layer 2, and the projection of each metal layer in the array substrate unit on the black matrix layer 2 is located in a plurality of non-opening regions of the black matrix layer 2, as shown in FIG.
  • forming the black matrix layer 2 having a plurality of opening regions and a plurality of non-opening regions on the base substrate 1 includes: forming a black photoresist material layer on the base substrate 1; forming by having a mask and an etching process a plurality of open areas and a plurality of non-open areas of the black matrix layer 2.
  • Processes such as black photoresist material layers, masks, and etching are well known to those skilled in the art and will not be described in detail herein.
  • forming the array substrate unit on the black matrix layer 2 includes: forming a patterned gate line and a gate layer 3 on the black matrix layer 2, the gate line and the gate layer 3 on the black matrix layer 2
  • the projection is located in a plurality of non-opening regions of the black matrix layer 2; forming a gate insulating layer 4 covering the gate layer 3; forming a patterned active layer 5 on the gate insulating layer 4, the active layer 5 is black
  • the projection on the matrix layer 2 is located in a plurality of non-opening regions of the black matrix layer 2; the patterned data lines and the source and drain layers 6 are formed on the active layer 5, and the data lines and the source and drain layers 6 are on the black matrix layer.
  • the projection on 2 is located in a plurality of non-opening regions of the black matrix layer; and a passivation layer formed on the source and drain layers 6. That is, in the bottom emission substrate, the pattern wheel of the non-opening region in the black matrix layer 2 is a superposition of pattern outlines of all metal layers such as gate lines and gate layers, data lines, and source and drain layers. To ensure that there is a pattern of the black matrix layer 2 directly under all metal layers.
  • a black matrix layer is disposed between the substrate substrate and the array substrate unit, and the black matrix layer has a plurality of open regions and a plurality of non-openings. The regions, and the respective metal layers in the array substrate unit are projected on the black matrix layer and fall within a plurality of non-opening regions of the black matrix layer. Since the black matrix layer has low reflection characteristics, it can prevent each metal layer from reflecting ambient light, can reduce the influence of ambient light reflection, and improve contrast and color gamut. In addition, since the polarizer is no longer required, the utilization of light can be improved, and the display effect of the display device can be improved.

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Abstract

提供一种底发射基板、显示装置及该基板的制造方法。所述底发射基板包括：衬底基板（1）；设置于所述衬底基板（1）上、具有多个开口区和多个非开口区的黑矩阵层（2）；以及设置于所述黑矩阵层（2）上的阵列基板单元，所述阵列基板单元中的各个金属层在所述黑矩阵层（2）上的投影位于所述黑矩阵层（2）的多个非开口区内。还提供了所述底发射基板的制造方法，以及包括所述底发射基板的显示装置。

Description

一种底发射基板、 显示装置及该基板的制造方法 技术领域
本公开的实施例涉及一种底发射基板、 显示装置及该基板的制造方法。 背景技术
有机发光二极管 （Organic Light Emitting devices, 以下简称 OLED ) 面 板与液晶面板相比， 因具有轻薄、 低功耗、 颜色纯正、 广视角、 可柔性等优 点而得到广泛应用。
发明人已知的一种底发射 OLED面板，釆用白光 OLED以及滤色器整合 阵列基板 ( Color Filter On Array, 以下简称 COA )技术， 即底发射 OLED面 板釆用白光 OLED和 COA基板。 该底发射的 OLED面板的制作工艺包括： 首先在玻璃基板上进行阵列（Array )工艺以形成阵列基板单元， 然后在阵列 基板单元上进行滤色器工艺， 将滤色器整合于阵列基板单元上， 上述两步即 可形成 COA基板， 之后在滤色器上制作电致发光层（ ElectroLuminescence layer, 以下简称 EL层） ， 最后进行封装形成 OLED面板； EL层发出的光会 穿过彩色滤光片、阵列基板单元和玻璃基板被观察者接收，因此，上述 OLED 面板被称为底发射结构 OLED面板或底发射 OLED面板。
为了减轻反射环境光产生的影响，通常在底发射 OLED面板观查者一侧 贴附偏光片， 不过偏光片会过滤 60%左右的出射光， 导致光的利用率较低； 如果不贴附偏光片， 虽然光的利用率较高， 但 COA基板中的栅极层、 源漏 极层、 有源层等金属层会反射环境光， 从而降低底发射 OLED面板的对比度 及色域， 影响底发射 OLED面板的显示效果。 因此， 如何提供一种光利用率 高并可减轻环境光反射产生的影响的底发射基板成为本领域技术人员急需解 决的问题。 公开内容
本公开的目的之一在于提高底发射 OLED面板中的光利用率并减轻环境 光反射产生的影响， 进而提高显示装置的显示效果。 为了实现上述目的， 本公开的至少一个实施例提供了一种底发射基板， 包括：
衬底基板；
设置于所述衬底基板上、 具有多个开口区域和多个非开口区域的黑矩阵 层；
以及设置于所述黑矩阵层上的阵列基板单元， 所述阵列基板单元中的各 个金属层在所述黑矩阵层上的投影位于所述黑矩阵层的多个非开口区域内。
在本公开的一个实施例中， 在所述黑矩阵层中， 所述多个开口区域呈阵 列状排列， 所述多个非开口区域间隔设置在所述多个非开口区域之间。
在本公开的一个实施例中， 所述阵列基板单元包括：
设置于所述黑矩阵层上的栅线和栅极层， 且所述栅线和所述栅极层在所 述黑矩阵层上的投影位于所述黑矩阵层的多个非开口区域内；
覆盖于所述栅极层上的栅极绝缘层；
设置于所述栅极绝缘层上的有源层， 且所述有源层在所述黑矩阵层上的 投影位于所述黑矩阵层的多个非开口区域内；
设置于所述有源层上的数据线和源漏极层， 且所述数据线和所述源漏极 层在所述黑矩阵层上的投影位于所述黑矩阵层的多个非开口区域内；
以及覆盖于所述源漏极层的钝化层。
进一步地， 上述底发射基板还包括： 设置于所述阵列基板单元上的滤色 器， 以及设置于所述滤色器上的透明电极层。
本公开的至少一个实施例还提供了一种显示装置， 包括具有上述技术特 征的底发射基板。
本公开的至少一个实施例还提供了一种底发射基板的制造方法， 包括： 在衬底基板上形成具有多个开口区域和多个非开口区域的黑矩阵层； 在所述黑矩阵层上形成阵列基板单元， 且所述阵列基板单元中的各个金 属层在所述黑矩阵层上的投影位于所述黑矩阵层的多个非开口区域内。
在本公开的一个实施例中， 在衬底基板上形成具有多个开口区域和多个 非开口区域的黑矩阵层包括：
在衬底基板上形成黑色光阻材料层；
通过掩膜、 刻蚀工艺， 形成具有多个开口区域和多个非开口区域的黑矩 阵层。
在本公开的一个实施例中， 在所述黑矩阵层上形成阵列基板单元包括： 在所述黑矩阵层上形成图形化的栅线和栅极层， 且所述栅线和所述栅极 层在所述黑矩阵层上的投影位于所述黑矩阵层的多个非开口区域内；
形成覆盖所述栅极层的栅极绝缘层；
在所述栅极绝缘层上形成图形化的有源层， 且所述有源层在所述黑矩阵 层上的投影位于所述黑矩阵层的多个非开口区域内；
在所述有源层上形成图形化的数据线和源漏极层， 且所述数据线和所述 源漏极层在所述黑矩阵层上的投影位于所述黑矩阵层的多个非开口区域内； 以及形成在所述源漏极层上的钝化层。
进一步地， 上述底发射基板的制造方法还包括：
形成在所述阵列基板单元上的滤色器；
以及形成在所述滤色器上的透明电极层。
在根据本公开的实施例的底发射基板中， 衬底基板和阵列基板单元之间 设置有一黑矩阵层， 所述黑矩阵层具有多个开口区域和多个非开口区域， 且 阵列基板单元中的各个金属层在黑矩阵层上投影都落在黑矩阵层的多个非开 口区域内， 因黑矩阵层具有低反射的特点，可以防止各个金属层反射环境光， 可减轻环境光反射产生的影响， 从而提高对比度和色域。 另外， 不再需要偏 光片， 可以提高光的利用率， 进而提高显示装置的显示效果。 附图说明
为了更清楚地说明本公开实施例的技术方案， 下面将对实施例的附图作 简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例， 而非对本公开的限制。
图 1为本公开实施例提供的一种底发射基板的横向剖视图；
图 2为本公开实施例提供的一种底发射基板的纵向剖视图；
图 3为图 2中的黑矩阵层的俯视图；
图 4为本公开实施例提供的一种底发射基板制造方法的流程图； 图 5为形成有黑矩阵层的底发射基板的剖面图；
图 6为在黑矩阵层上形成有阵列基板单元的基板的剖面图。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚， 下面将结合本发 明实施例的附图， 对本发明实施例的技术方案进行清楚、 完整地描述。显然， 所描述的实施例是本发明的一部分实施例， 而不是全部的实施例。 基于所描 述的本发明的实施例， 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例， 都属于本发明保护的范围。
为了提高光的利用率， 以及减轻环境光反射产生的影响， 进而提高显示 装置的显示效果， 本公开的实施例提供了一种底发射基板， 在衬底基板和阵 列基板单元之间设置有一黑矩阵层， 所述黑矩阵层具有多个开口区域和多个 非开口区域， 且阵列基板单元中的各个金属层在黑矩阵层上投影都落在黑矩 阵层的多个非开口区域内， 因黑矩阵层具有低反射的特点， 可以减轻环境光 反射产生的影响， 从而可以提高对比度和色域； 而且不需要偏光片， 进而可 以提高光的利用率， 进而提高显示装置的显示效果。
请参见图 1、 图 2和图 3， 其中， 图 1为根据本公开实施例的一种底发射 基板的横向剖视图； 图 2为根据本公开实施例的一种底发射基板的纵向剖视 图； 图 3为图 2中一种黑矩阵层的俯视图。 本公开实施例提供的底发射基板 包括： 衬底基板 1 ; 设置于衬底基板 1上、 具有多个开口区域和多个非开口 区域的黑矩阵层 2; 以及设置于黑矩阵层 2上的阵列基板单元， 阵列基板单 元中的各个金属层在黑矩阵层 2上的投影位于黑矩阵层 2的多个非开口区域 内。
实践中， 在衬底基板 1和阵列基板单元之间设置有一黑矩阵层 2， 该黑 矩阵层 2具有多个开口区域和多个非开口区域， 且阵列基板单元中的各个金 属层在黑矩阵层 2上的投影位于黑矩阵层 2的多个非开口区域内， 如图 2所 示， 剖面线区域为非开口区域， 非剖面线区域为开口区域。 更加详细地说， 在底发射基板中， 黑矩阵层 2中的非开口区域的图案形状是所有金属层（如 栅线和栅极层、 数据线和源漏极层） 的图案形状的叠加， 以保证所有金属层 的正下方存在黑矩阵层 2的图案； 也就是说， 黑矩阵层 2的结构由阵列基板 单元中各个金属层在衬底基板 1上的投影形状而定。 例如， 阵列基板单元中 各个金属层在衬底基板 1上的投影形状为阵列状排列的多个矩形， 则黑矩阵 层 2中的各个非开口区域的形状也为矩形， 且呈阵列状排列。 继续参见图 2, 一种实施方式中， 在黑矩阵层 2中， 多个非开口区域呈阵列状排列， 多个开 口区域间隔设置在多个非开口区域之间。
阵列基板单元中的各个金属层在黑矩阵层 2上投影都落在黑矩阵层 2的 多个非开口区域内， 由于黑矩阵层 2材料具有低反射的特点， 可以防止各个 金属层反射环境光， 可减轻环境光反射产生的影响， 因此， 可以提高对比度 和色域。 另外， 由于不再需要偏光片， 提高了光的利用率。 因此， 釆用上述 底发射基板的显示装置， 可以显著提高显示装置的显示效果。
值得一提的是， 上述底发射基板中， 每个像素单元与两个薄膜晶体管 ( Thin Film Transistor, 简称 TFT )对应， 但不限于此， 底发射基板的每个像 素单元中也可以与两个以上 TFT对应， 在此不做限定。
继续参见图 1， 阵列基板单元包括： 设置于黑矩阵层 2上的栅线和栅极 层 3， 栅线和栅极层 3在黑矩阵层 2上的投影位于黑矩阵层 2的多个非开口 区域内；覆盖于栅极层 3的栅极绝缘层 4;设置于栅极绝缘层 4上的有源层 5， 有源层 5在黑矩阵层 2上的投影位于黑矩阵层 2的多个非开口区域内； 设置 于有源层 5上的数据线和源漏极层 6， 数据线和源漏极层 6在黑矩阵层 2上 的投影位于黑矩阵层 2的多个非开口区域内； 以及覆盖于源漏极层 6的钝化 层 7。
上述底发射基板还可以进一步包括：设置于阵列基板单元上的滤色器 8， 以及设置于滤色器 8上的透明电极层 10。 例如， 滤色器 8位于钝化层 7上， 透明电极层 10位于滤色器 8上。透明电极层 10可以是 OLED的阴极层或阳 极层； 这种底发射基板也称为滤色器整合阵列基板（Color Filter On Array )， 即 COA基板。 值得一提的是， 上述底发射基板是在釆用白光 OLED时才需 要在底发射基板中设置滤色器以实现彩色显示， 当底发射基板釆用彩色 OLED时则不需要在底发射基板中设置滤色器就可以实现彩色显示。
本公开的至少一个实施例还提供了一种显示装置， 包括具有上述特征的 底发射基板。在本文中，显示装置可以是任何具有显示功能的产品或部件等， 例如手机、 平板电脑、 电视机、 显示器、 笔记本电脑、 数码相框、 导航仪等。
本公开的至少一个实施例还提供了一种制造底发射基板的方法。 请参见 图 4〜图 6，其中， 图 4为本公开实施例提供的制造底发射基板方法的流程图； 图 5为形成有黑矩阵层的底发射基板的剖面图； 图 6为在黑矩阵层上形成有 阵列基板单元的基板的剖面图。 根据本公开的至少一个实施例的底发射基板 的制造方法包括：
步骤 101、 在衬底基板 1上形成具有多个开口区域和多个非开口区域的 黑矩阵层 2， 如图 5所示。
步骤 102、 在黑矩阵层 2上形成阵列基板单元， 且阵列基板单元中的各 个金属层在黑矩阵层 2上的投影位于黑矩阵层 2的多个非开口区域内， 如图 6所示。
例如， 在衬底基板 1上形成具有多个开口区域和多个非开口区域的黑矩 阵层 2包括： 在衬底基板 1上形成黑色光阻材料层； 通过掩膜、 刻蚀工艺， 形成具有多个开口区域和多个非开口区域的黑矩阵层 2。 黑色光阻材料层、 掩膜及刻蚀等工艺过程为本领域技术人员所熟知， 这里不再详细描述了。
在一种实施方式中， 在黑矩阵层 2上形成阵列基板单元包括： 在黑矩阵 层 2上形成图形化的栅线和栅极层 3， 栅线和栅极层 3在黑矩阵层 2上的投 影位于黑矩阵层 2的多个非开口区域内；形成覆盖栅极层 3的栅极绝缘层 4; 在栅极绝缘层 4上形成图形化的有源层 5， 有源层 5在黑矩阵层 2上的投影 位于黑矩阵层 2的多个非开口区域内； 在有源层 5上形成图形化的数据线和 源漏极层 6， 数据线和源漏极层 6在黑矩阵层 2上的投影位于黑矩阵层的多 个非开口区域内； 以及形成在源漏极层 6上的钝化层。 也就是说， 在该底发 射基板中， 黑矩阵层 2中的非开口区域的图案轮廊是所有金属层（如栅线和 栅极层、 数据线和源漏极层） 的图案轮廓的叠加， 以保证所有金属层的正下 方存在黑矩阵层 2的图案。
综上所述， 在本公开的至少一个实施例提供的底发射基板中， 衬底基板 和阵列基板单元之间设置有一黑矩阵层， 所述黑矩阵层具有多个开口区域和 多个非开口区域， 且阵列基板单元中的各个金属层在黑矩阵层上投影都落在 黑矩阵层的多个非开口区域内。 由于黑矩阵层具有低反射的特点， 可以防止 各个金属层反射环境光，可减轻环境光反射产生的影响，提高对比度和色域。 另外， 由于不再需要偏光片， 可以提高光的利用率， 进而提高显示装置的显 示效果。
以上所述仅是本公开的示范性实施方式， 而非用于限制本公开的保护范 围， 本公开的保护范围由所附的权利要求确定。 本申请要求于 2013年 10月 28日递交的中国专利申请第 201310517210·3 号的优先权， 在此全文引用上述中国专利申请公开的内容以作为本申请的一 部分。

Claims

权利要求书
1、 一种底发射基板， 其包括：
衬底基板；
黑矩阵层， 设置于所述衬底基板上且具有多个开口区域和多个非开口区 域； 以及
阵列基板单元， 所述阵列基板单元设置于所述黑矩阵层上， 所述阵列基 板单元中的各个金属层在所述黑矩阵层上的投影位于所述黑矩阵层的多个非 开口区 i或内。
2、 如权利要求 1所述的底发射基板， 其中， 在所述黑矩阵层中， 所述多 个非开口区域呈阵列状排列， 所述多个开口区域间隔设置在所述多个非开口 区 i或之间。
3、如权利要求 1或 2所述的底发射基板，其中，所述阵列基板单元包括： 栅线和栅极层， 所述栅线和栅极层设置于所述黑矩阵层上， 且所述栅线 和所述栅极层在所述黑矩阵层上的投影位于所述黑矩阵层的多个非开口区域 内；
栅极绝缘层， 覆盖于所述栅极层上；
有源层， 所述有源层设置于所述栅极绝缘层上且在所述黑矩阵层上的投 影位于所述黑矩阵层的多个非开口区域内；
数据线和源漏极层， 所述数据线和源漏极层设置于所述有源层上且在所 述黑矩阵层上的投影位于所述黑矩阵层的多个非开口区域内； 以及
钝化层， 覆盖于所述源漏极层上。
4、如权利要求 1至 3任何一项所述的底发射基板， 其还包括： 设置于所 述阵列基板单元上的滤色器， 以及设置于所述滤色器上的透明电极层。
5、 一种显示装置， 其包括： 如权利要求 1至 4中任何一项所述的底发射 基板。
6、 一种制造底发射基板的方法， 其包括：
在衬底基板上形成具有多个开口区域和多个非开口区域的黑矩阵层； 在所述黑矩阵层上形成阵列基板单元， 且所述阵列基板单元中的各个金 属层在所述黑矩阵层上的投影位于所述黑矩阵层的多个非开口区域内。
7、如权利要求 6所述的方法， 其中， 在衬底基板上形成具有多个开口区 域和多个非开口区域的黑矩阵层包括：
在衬底基板上形成黑色光阻材料层；
通过掩膜、 刻蚀工艺， 形成具有多个开口区域和多个非开口区域的黑矩 阵层。
8、如权利要求 6或 7所述的方法， 其中， 在所述黑矩阵层上形成阵列基 板单元包括：
在所述黑矩阵层上形成图形化的栅线和栅极层， 且所述栅线和所述栅极 层在所述黑矩阵层上的投影位于所述黑矩阵层的多个非开口区域内；
形成覆盖所述栅极层上的栅极绝缘层；
在所述栅极绝缘层上形成图形化的有源层， 且所述有源层在所述黑矩阵 层上的投影位于所述黑矩阵层的多个非开口区域内；
在所述有源层上形成图形化的数据线和源漏极层， 且所述数据线和所述 源漏极层在所述黑矩阵层上的投影位于所述黑矩阵层的多个非开口区域内； 以及
在所述源漏极层上形成钝化层。
9、如权利要求 6至 8中任何一项所述的底发射基板的制造方法，其还包 括：
在所述阵列基板单元上形成滤色器； 以及
在所述滤色器上形成透明电极层。
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