WO2018198710A1 - Panneau d'affichage à cristaux liquides et dispositif électronique - Google Patents
Panneau d'affichage à cristaux liquides et dispositif électronique Download PDFInfo
- Publication number
- WO2018198710A1 WO2018198710A1 PCT/JP2018/014584 JP2018014584W WO2018198710A1 WO 2018198710 A1 WO2018198710 A1 WO 2018198710A1 JP 2018014584 W JP2018014584 W JP 2018014584W WO 2018198710 A1 WO2018198710 A1 WO 2018198710A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- liquid crystal
- display panel
- crystal display
- semiconductor film
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 83
- 239000004065 semiconductor Substances 0.000 claims abstract description 68
- 239000000463 material Substances 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 43
- 239000011229 interlayer Substances 0.000 description 41
- 239000003990 capacitor Substances 0.000 description 34
- 239000010410 layer Substances 0.000 description 32
- 238000005516 engineering process Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 239000003870 refractory metal Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 3
- 229910021342 tungsten silicide Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- -1 silicide compound Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Abstract
La présente invention concerne un panneau d'affichage à cristaux liquides qui est pourvu de : une couche de cristaux liquides ; des transistors pour exciter la couche de cristaux liquides dans chaque pixel, les transistors comportant un film semi-conducteur dans lequel une région de canal est disposée ; une première électrode électriquement connectée au film semi-conducteur, la première électrode recouvrant la région de canal du film semi-conducteur ; une deuxième électrode faisant face à la première électrode ; une troisième électrode électriquement connectée à la première électrode, la troisième électrode faisant face à la première électrode avec la deuxième électrode entre celles-ci ; un câblage faisant face au film semi-conducteur avec la troisième électrode entre ceux-ci, le câblage étant disposé dans une position superposée sur la troisième électrode en vue en plan ; et une électrode de blindage disposée entre le câblage et la troisième électrode et électriquement connectée à la deuxième électrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019515199A JP7110182B2 (ja) | 2017-04-27 | 2018-04-05 | 液晶表示パネルおよび電子機器 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-087947 | 2017-04-27 | ||
JP2017087947 | 2017-04-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2018198710A1 true WO2018198710A1 (fr) | 2018-11-01 |
Family
ID=63919803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2018/014584 WO2018198710A1 (fr) | 2017-04-27 | 2018-04-05 | Panneau d'affichage à cristaux liquides et dispositif électronique |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP7110182B2 (fr) |
WO (1) | WO2018198710A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020160208A (ja) * | 2019-03-26 | 2020-10-01 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011221071A (ja) * | 2010-04-05 | 2011-11-04 | Seiko Epson Corp | 電気光学装置及び電子機器 |
JP2011221119A (ja) * | 2010-04-06 | 2011-11-04 | Seiko Epson Corp | 電気光学装置及び電子機器、並びに電気光学装置の製造方法 |
JP2012198386A (ja) * | 2011-03-22 | 2012-10-18 | Seiko Epson Corp | 電気光学装置、投射型表示装置および電子機器 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3358613B2 (ja) | 2000-03-23 | 2002-12-24 | 日本電気株式会社 | 液晶ライトバルブ |
-
2018
- 2018-04-05 WO PCT/JP2018/014584 patent/WO2018198710A1/fr active Application Filing
- 2018-04-05 JP JP2019515199A patent/JP7110182B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011221071A (ja) * | 2010-04-05 | 2011-11-04 | Seiko Epson Corp | 電気光学装置及び電子機器 |
JP2011221119A (ja) * | 2010-04-06 | 2011-11-04 | Seiko Epson Corp | 電気光学装置及び電子機器、並びに電気光学装置の製造方法 |
JP2012198386A (ja) * | 2011-03-22 | 2012-10-18 | Seiko Epson Corp | 電気光学装置、投射型表示装置および電子機器 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020160208A (ja) * | 2019-03-26 | 2020-10-01 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2018198710A1 (ja) | 2020-03-05 |
JP7110182B2 (ja) | 2022-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9030458B2 (en) | Electro-optical device and electronic apparatus | |
KR101896377B1 (ko) | 베젤이 최소화된 액정표시소자 | |
JP4306737B2 (ja) | 電気光学装置用基板及び電気光学装置、並びに電子機器 | |
JP2013080040A (ja) | 電気光学装置、電気光学装置の製造方法、及び電子機器 | |
JP2007226175A (ja) | 液晶装置及び電子機器 | |
JP2017072741A (ja) | 電気光学装置、電子機器、電気光学装置の製造方法 | |
TWI274309B (en) | Electro-optical device and electronic machine | |
US8698967B2 (en) | Electro-optic device, electronic device, and method of manufacturing electro-optic device | |
US10241370B2 (en) | Semiconductor device and projection-type display unit | |
JP5176814B2 (ja) | 電気光学装置及び電子機器、並びに電気光学装置の製造方法 | |
JP2008225034A (ja) | 電気光学装置及び電子機器 | |
JP2010096966A (ja) | 電気光学装置及びその製造方法、並びに電子機器 | |
JP4674544B2 (ja) | 電気光学装置の製造方法 | |
JP4857775B2 (ja) | 電気光学装置 | |
JP7288612B2 (ja) | 液晶表示装置及び電子機器 | |
JP5919890B2 (ja) | 電気光学装置、及び電子機器 | |
JP7110182B2 (ja) | 液晶表示パネルおよび電子機器 | |
JP2012155198A (ja) | 電気光学装置及び電子機器 | |
JP2003280020A (ja) | 電気光学装置及びその製造方法並びに電子機器 | |
US11294222B2 (en) | Manufacturing method for electro-optical device, electro-optical device, and electronic apparatus | |
JP2009069247A (ja) | 電気光学装置、その製造方法及び電子機器、並びに配線構造 | |
JP2007065440A (ja) | 電気光学装置、電子機器 | |
JP2020034822A (ja) | 電気光学装置、電子機器 | |
JP2022079973A (ja) | 電気光学装置、電気光学装置の製造方法および電子機器 | |
JP5482279B2 (ja) | 電気光学装置及び電子機器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 18790523 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2019515199 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 18790523 Country of ref document: EP Kind code of ref document: A1 |