WO2018193993A1 - 成膜装置及び成膜方法 - Google Patents

成膜装置及び成膜方法 Download PDF

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Publication number
WO2018193993A1
WO2018193993A1 PCT/JP2018/015577 JP2018015577W WO2018193993A1 WO 2018193993 A1 WO2018193993 A1 WO 2018193993A1 JP 2018015577 W JP2018015577 W JP 2018015577W WO 2018193993 A1 WO2018193993 A1 WO 2018193993A1
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WIPO (PCT)
Prior art keywords
film
film forming
lithium metal
forming apparatus
gas
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PCT/JP2018/015577
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English (en)
French (fr)
Japanese (ja)
Inventor
礼寛 横山
応樹 武井
昌敏 佐藤
清田　淳也
Original Assignee
株式会社アルバック
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Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to KR1020197000115A priority Critical patent/KR102192297B1/ko
Priority to JP2019513612A priority patent/JP6602505B2/ja
Priority to CN201880002619.2A priority patent/CN109689927B/zh
Publication of WO2018193993A1 publication Critical patent/WO2018193993A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0402—Methods of deposition of the material
    • H01M4/0421—Methods of deposition of the material involving vapour deposition
    • H01M4/0423—Physical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/139—Processes of manufacture
    • H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Definitions

  • the present invention relates to a film forming apparatus and a film forming method for forming a lithium metal film on a substrate by evaporating lithium metal.
  • lithium ion secondary batteries mounted on these devices have attracted attention.
  • a process of forming lithium metal on a substrate is particularly important in the manufacturing process, and various techniques have been proposed so far.
  • Patent Document 1 describes a technique of forming lithium metal on a base material by evaporating lithium metal in a chamber and depositing scattered particles on the base material.
  • Patent Document 1 describes a technique for suppressing deterioration of a lithium metal film by forming a protective film made of lithium carbonate on the surface of the lithium metal film.
  • Patent Document 1 a lithium laminated member in which a lithium metal film is formed on a base material is moved to a treatment chamber from which moisture has been removed, and an inert gas containing carbon dioxide gas is introduced into the treatment chamber, whereby lithium metal A protective film made of lithium carbonate is formed on the surface of the film.
  • the above method is a method for forming a protective film in an environment from which moisture has been removed, there is a possibility that the protective film may not be stably formed because the hydroxide that is a precursor of lithium carbonate is not well formed. is there.
  • an object of the present invention is to provide a film forming apparatus and a film forming method capable of stably forming a protective film on a lithium metal film.
  • a film forming apparatus includes a film forming unit, a first processing unit, a second processing unit, and a vacuum chamber.
  • the film forming unit includes an evaporation source for evaporating lithium metal, and forms a lithium metal film on the substrate.
  • the first processing unit includes a first processing chamber for hydroxylating the surface of the lithium metal film.
  • the second processing section includes a second processing chamber for carbonating the hydroxylated surface.
  • the vacuum chamber houses the film forming unit, the first processing unit, and the second processing unit.
  • the lithium metal film formed on the substrate can be hydroxylated.
  • the hydroxide which is a precursor of the protective film which consists of lithium carbonate can be formed favorably, and a protective film can be stably formed in a subsequent carbonation process.
  • the formation of the lithium metal film, the hydroxylation treatment, and the carbonation treatment can be performed consistently in the vacuum chamber. As a result, contact between the lithium metal film and the outside air is prevented, so that deterioration of the lithium metal film can be suppressed and a protective film can be stably formed.
  • a transport mechanism provided in the vacuum chamber and configured to transport the base material that is a long film;
  • the transport mechanism is provided on the upstream side in the transport direction of the film from the film forming unit, and is provided on the downstream side in the transport direction of the film from the unwinding roller for unwinding the film and the first and second processing chambers.
  • a winding roller for winding the film.
  • the first processing unit further includes a first gas supply line for introducing a first gas containing oxygen and hydrogen into the first processing chamber
  • the second processing unit may further include a second gas supply line for introducing a second gas containing carbon and oxygen into the second processing chamber.
  • the first gas may be water vapor
  • the second gas may be a mixed gas of a rare gas and carbon dioxide gas.
  • the first processing unit further includes a pressure adjusting mechanism that adjusts the pressure of water vapor introduced into the first processing chamber to 1.0 ⁇ 10 ⁇ 6 Pa or more and 1.0 ⁇ 10 ⁇ 2 Pa or less. May be.
  • a pressure adjusting mechanism that adjusts the pressure of water vapor introduced into the first processing chamber to 1.0 ⁇ 10 ⁇ 6 Pa or more and 1.0 ⁇ 10 ⁇ 2 Pa or less. May be.
  • a film forming method includes: A lithium metal film is formed on the substrate in a vacuum chamber.
  • the surface of the lithium metal film is hydroxylated in a vacuum chamber.
  • the hydroxylated surface is carbonated in the vacuum chamber.
  • FIG. 1 is a schematic sectional side view showing a configuration of a film forming apparatus 100 according to an embodiment of the present invention.
  • the X-axis, Y-axis, and Z-axis directions shown in FIG. 1 indicate triaxial directions orthogonal to each other, the X-axis and Y-axis indicate horizontal directions, and the Z-axis direction indicates a vertical direction.
  • the film forming apparatus 100 includes a vacuum chamber 110, a film forming unit 120, a transfer unit 130, a first processing unit 140, a second processing unit 150, a recovery unit 160, and a transfer mechanism. 170.
  • the vacuum chamber 110 has a sealed structure and is connected to a first exhaust line L having a vacuum pump P1. Thereby, the vacuum chamber 110 is configured such that the inside thereof can be evacuated or maintained in a predetermined reduced pressure atmosphere. Further, as shown in FIG. 1, the vacuum chamber 110 includes a plurality of partition plates 111, 112, partitioning a film forming unit 120, a transport unit 130, a first processing chamber 141, a second processing chamber 151, and a recovery unit 160, respectively. 113, 114, 115.
  • the film forming unit 120 is a film forming chamber partitioned by the partition plate 111 and the outer wall of the vacuum chamber 110, and has an evaporation source 121 therein. Further, the film forming unit 120 is connected to the first exhaust line L. Thereby, when the vacuum chamber 110 is evacuated, first, the inside of the film forming unit 120 is evacuated.
  • the film forming unit 120 communicates with the transport unit 130, when the film forming unit 120 is exhausted, the transport unit 130 is also exhausted. Thereby, a pressure difference is generated between the film forming unit 120 and the transport unit 130. Due to this pressure difference, a vapor flow of a lithium raw material, which will be described later, is prevented from entering the transport unit 130.
  • the evaporation source 121 is a lithium evaporation source that evaporates lithium metal, and includes, for example, a resistance heating evaporation source, an induction heating evaporation source, and an electron beam heating evaporation source.
  • the transfer unit 130 is a transfer chamber partitioned by the partition plates 111, 112, and 115 and the outer wall of the vacuum chamber 110, and is disposed in the Y-axis direction inside the vacuum chamber 110.
  • the first exhaust line L is connected only to the film forming unit 120. However, by connecting another exhaust line to the transfer unit 130, the transfer unit 130 and the film forming unit 120 are independently exhausted. May be.
  • the first processing unit 140 includes a first processing chamber 141, a first gas supply line 142, and a pressure adjustment mechanism 143.
  • the first processing chamber 141 is a processing chamber partitioned by the partition plates 112, 113, and 115 and the outer wall of the vacuum chamber 110.
  • the first processing chamber 141 is connected to a first gas supply line 142 having a first gas supply source S1. Thereby, the 1st processing chamber 141 is constituted so that the 1st gas can be introduced into the inside.
  • the first gas is not particularly limited as long as it contains oxygen and hydrogen, and is typically water vapor.
  • the first processing chamber 141 is connected to a pressure adjustment mechanism 143 having a pump P2. Accordingly, the first processing chamber 141 is maintained in a predetermined reduced pressure atmosphere, and the gas pressure of the first gas in the first processing chamber 141 is adjusted to a predetermined pressure.
  • the first gas introduced into the first processing chamber 141 when the first gas introduced into the first processing chamber 141 is exhausted, the inside of the first processing chamber 141 is first exhausted.
  • the transfer unit 130 since the first processing chamber 141 communicates with the transfer unit 130, when the first processing chamber 141 is exhausted, the transfer unit 130 is also exhausted. As a result, a pressure difference is generated between the first processing chamber 141 and the transfer unit 130. This pressure difference prevents the first gas from entering the transfer unit 130.
  • the second processing unit 150 includes a second processing chamber 151, a second gas supply line 152, and a second exhaust line 153.
  • the second processing chamber 151 is a processing chamber partitioned by the partition plates 113, 114, 115 and the outer wall of the vacuum chamber 110.
  • the second processing chamber 151 is connected to a second gas supply line 152 having a second gas supply source S2. Thereby, the 2nd processing chamber 151 is constituted so that the 2nd gas can be introduced into the inside.
  • the second gas is not particularly limited as long as it is a gas containing carbon and oxygen. Specifically, for example, a mixed gas of a rare gas such as argon and carbon dioxide is used. In this case, the amount of carbon dioxide contained in the second gas can also be set as appropriate, for example, about 5% in volume ratio.
  • the second processing chamber 151 is connected to a second exhaust line 153 having a pump P3. Accordingly, the second processing chamber 151 is configured to be maintained in a predetermined reduced pressure atmosphere.
  • the internal pressure in the second processing chamber 151 may be the same as or higher than the internal pressure in the first processing chamber 141. Further, the second gas supply line 152 may be omitted as necessary.
  • the transport mechanism 170 includes an unwinding roller 171, a main roller 172, and a winding roller 173.
  • the unwinding roller 171, the main roller 172, and the winding roller 173 are each provided with a rotation drive unit (not shown) and configured to be rotatable around the Z axis in the direction of the arrow in FIG. 1 at a predetermined rotation speed.
  • a rotation drive unit not shown
  • the substrate F is transported from the unwinding roller 171 toward the winding roller 173 in the vacuum chamber 110 at a predetermined transport speed.
  • the unwinding roller 171 is provided on the upstream side in the transport direction of the base material F from the film forming unit 120 and has a function of feeding the base material F to the main roller 172.
  • An appropriate number of guide rollers (not shown) that do not include a unique rotation drive unit may be disposed at an appropriate position between the unwinding roller 171 and the main roller 172.
  • the main roller 172 is disposed between the unwinding roller 171 and the winding roller 173 in the conveying direction of the base material F.
  • the main roller 172 is disposed at a position where at least a part of the lower part in the Y-axis direction faces the film forming unit 120 through the opening 111 a provided in the partition plate 111.
  • the main roller 172 faces the opening 111a with a predetermined interval, and faces the evaporation source 121 in the Y-axis direction.
  • the main roller 172 may be made of a metal material such as stainless steel, iron, or aluminum, and may be provided with a temperature control mechanism such as a temperature control medium circulation system (not shown).
  • the size of the main roller 172 is not particularly limited, but typically, the width dimension in the Z-axis direction is set larger than the width dimension of the base material F in the Z-axis direction.
  • the take-up roller 173 is disposed in the recovery unit 160 which is a space partitioned by the partition plates 114 and 115 and the outer wall of the vacuum chamber 110, and is unwound from the unwind roller 171 and formed with lithium metal in the film forming unit 120. It has a function to collect the base material F.
  • an appropriate number of guide rollers (not shown) that do not include an original rotation drive unit may be disposed at an appropriate position between the winding roller 173 and the main roller 172.
  • the base material F is, for example, a long film cut to a predetermined width.
  • the base material F is comprised with metals, such as copper, aluminum, nickel, stainless steel.
  • the substrate F may be a resin film such as an OPP (stretched polypropylene) film, a PET (polyethylene terephthalate) film, a PPS (polyphenylene sulfide) film, or a PI (polyimide) film.
  • the thickness of the substrate F is not particularly limited and is, for example, several ⁇ m to several tens of ⁇ m. Moreover, there is no restriction
  • the film forming apparatus 100 has the above configuration. Although not shown, the film forming apparatus 100 includes a controller that controls the evaporation source 121, the transport mechanism 170, the vacuum pumps P1 to P3, the first and second gas supply sources S1, S2, and the like.
  • the control unit is configured by a computer including a CPU and a memory, and controls the overall operation of the film forming apparatus 100.
  • the configuration of the film forming apparatus 100 is not limited to the configuration shown in FIG. 1.
  • the film forming unit 120, the evaporation source 121, the transfer unit 130, the first processing chamber 141, the second processing chamber 151, and the recovery unit are used.
  • the arrangement, size, etc. of 160 can be changed as appropriate.
  • FIG. 2 is a flowchart showing a film forming method using the film forming apparatus 100.
  • 3 to 5 are schematic diagrams showing a film forming process of the film forming apparatus 100.
  • FIG. Hereinafter, a film forming method of the film forming apparatus 100 will be described along FIG. 2 with reference to FIGS. 3 to 5 as appropriate.
  • a method for forming a protective film made of lithium carbonate on a lithium metal film formed on the substrate F will be described.
  • Step S01 exhaust processing
  • the vacuum pumps P1, P2, and P3 are activated to evacuate the vacuum chamber 110, and the film forming unit 120, the transfer unit 130, the first processing chamber 141, and the second processing chamber 151 are each maintained at a predetermined degree of vacuum.
  • the pressure in the film forming unit 120 is adjusted to 1 ⁇ 10 ⁇ 5 Pa or more and 1 ⁇ 10 ⁇ 2 Pa or less.
  • the first gas is introduced into the first processing chamber 141 from the first gas supply line 142.
  • water vapor is used as the first gas
  • the pressure of the water vapor introduced into the first processing chamber 141 by the pressure adjustment mechanism 143 is 1.0 ⁇ 10 ⁇ 6 Pa or more and 1.0 ⁇ 10 ⁇ 2 Pa. Adjusted to: Thereby, in the carbonation process (step S04) mentioned later, optimization of process conditions, such as the reaction efficiency of a hydroxide and 2nd gas improving, is achieved.
  • the second gas is introduced into the second processing chamber 151 from the second gas supply line 152.
  • a mixed gas of argon and carbon dioxide is used as the second gas, and the pressure of the carbon dioxide introduced into the second processing chamber 151 by the second exhaust line 153 is 1 ⁇ 10 ⁇ 6 Pa or more. It is adjusted to 1 ⁇ 10 ⁇ 3 Pa or less.
  • the transport mechanism 170 that supports the base material F is driven to transport the base material F from the unwinding roller 171 toward the winding roller 173.
  • the evaporation source 121 evaporates metallic lithium and forms a vapor flow of a lithium material that is emitted toward the base material F on the main roller 172.
  • Step S02 Film forming step
  • the unwinding roller 171, the main roller 172, and the winding roller 173 are continuously rotated at a predetermined rotation speed around the Z axis so that the base material F on the main roller 172 passes through the film forming unit 120.
  • Lithium metal particles are deposited on the substrate F, and a lithium metal film M1 is formed on the substrate F as shown in FIG.
  • the thickness of the lithium metal film M1 is not particularly limited, and is, for example, several ⁇ m to several tens ⁇ m.
  • Step S03 hydroxylation treatment
  • a chemical reaction represented by the following formula (1) occurs on the surface of the lithium metal film M1, and the surface of the lithium metal film M1 is hydroxylated. Therefore, as shown in FIG. 4, a reaction layer M2 made of lithium hydroxide is formed on the surface of the lithium metal film M1.
  • Step S04 Carbonation treatment
  • a chemical reaction represented by the following formula (2) occurs between the reaction layer M2 made of lithium hydroxide and the carbon dioxide gas, and as shown in FIG. A protective layer M3 made of is formed.
  • Step S05 Collection
  • the base material F on which the lithium metal film M1 having the protective layer M3 is formed is wound around the winding roller 173.
  • the lithium laminated base material F1 in which the protective layer M3 made of lithium carbonate is formed on the lithium metal film M1 is obtained.
  • the protective layer M3 formed by the film forming method functions as a strong protective film that covers the surface of the lithium metal film M1. Thereby, discoloration of the lithium laminated base material F1, deterioration of product characteristics using the base material F1, and the like are suppressed.
  • the protective layer M3 is formed without removing the lithium metal film M1 from the vacuum chamber 110. Thereby, the contact between the lithium metal film M1 and the outside air is prevented, so that the deterioration of the lithium metal film M1 can be suppressed and the protective layer M3 can be stably formed.
  • the formation of the lithium metal film M1, the hydroxylation process, and the carbonation process are performed consistently in the vacuum chamber 110.
  • a process such as aging by transferring the base material F on which the lithium metal film M1 is formed to an environment other than the vacuum chamber 110 becomes unnecessary. Therefore, the tact time from the formation of the lithium metal film M1 to the carbonation treatment is shortened, so that productivity is improved.
  • the first and second processing chambers 141 and 151 are provided on the transport path of the base material F. Accordingly, the substrate F on which the lithium metal film M1 is formed is inevitably passed through the first and second processing chambers 141 and 151 in the process of being recovered. Therefore, since the whole base F can be uniformly hydroxylated and carbonated, variations in the formation of the reaction layer M2 and the protective layer M3 are suppressed.
  • the vacuum deposition method is employed as an example of the film forming method, but the present invention is not limited thereto, and a molecular beam deposition method, an ion plating method, an ion beam deposition method, or the like may be employed.
  • the gas pressure in the first and second processing chambers 141 and 151 is adjusted to optimize the above-described hydroxylation treatment and carbonation treatment.
  • the present invention is not limited to this.
  • the size, arrangement, or number of the first and second processing chambers 141, 151 are changed as appropriate, the transport speed or transport path of the substrate F, or the first and second processing chambers.
  • the concentration of the first and second gases in the 141 and 151 and the number of the first and second gas supply lines 142 and 152 are optimized. May be achieved.
  • a take-up type film forming apparatus has been described as an example of the film forming apparatus 100.
  • the present invention can also be applied to, for example, a sheet type film forming apparatus.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
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  • General Chemical & Material Sciences (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Physical Vapour Deposition (AREA)
PCT/JP2018/015577 2017-04-19 2018-04-13 成膜装置及び成膜方法 WO2018193993A1 (ja)

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KR1020197000115A KR102192297B1 (ko) 2017-04-19 2018-04-13 막 형성장치 및 막 형성방법
JP2019513612A JP6602505B2 (ja) 2017-04-19 2018-04-13 成膜装置及び成膜方法
CN201880002619.2A CN109689927B (zh) 2017-04-19 2018-04-13 成膜装置及成膜方法

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EP4083252A4 (en) * 2019-12-26 2024-01-10 ULVAC, Inc. DEVICE FOR PRODUCING THIN LAYERS

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