WO2018155486A1 - 固体撮像素子及び撮像装置 - Google Patents
固体撮像素子及び撮像装置 Download PDFInfo
- Publication number
- WO2018155486A1 WO2018155486A1 PCT/JP2018/006193 JP2018006193W WO2018155486A1 WO 2018155486 A1 WO2018155486 A1 WO 2018155486A1 JP 2018006193 W JP2018006193 W JP 2018006193W WO 2018155486 A1 WO2018155486 A1 WO 2018155486A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- visible light
- infrared
- pixel
- filter
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 134
- 238000001514 detection method Methods 0.000 claims abstract description 82
- 230000003287 optical effect Effects 0.000 claims description 44
- 230000002596 correlated effect Effects 0.000 claims description 21
- 238000002834 transmittance Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 claims 4
- 239000010409 thin film Substances 0.000 claims 2
- 239000007787 solid Substances 0.000 claims 1
- 230000003595 spectral effect Effects 0.000 description 45
- 230000005540 biological transmission Effects 0.000 description 43
- 238000010586 diagram Methods 0.000 description 30
- 238000006243 chemical reaction Methods 0.000 description 23
- 230000004048 modification Effects 0.000 description 20
- 238000012986 modification Methods 0.000 description 20
- 230000000875 corresponding effect Effects 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000005286 illumination Methods 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010030 laminating Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
- H04N23/11—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths for generating image signals from visible and infrared light wavelengths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
- H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/131—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing infrared wavelengths
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
Definitions
- the present invention relates to a solid-state imaging device for color image shooting and an imaging apparatus including the solid-state imaging device. More specifically, the present invention relates to a solid-state imaging device and an imaging apparatus that detect visible light and near-infrared light.
- Patent Document 1 There has been proposed an image capturing device that detects infrared light reflected by a subject or emitted by the subject and forms a color image of the subject. If the technique described in Patent Document 1 is used, a color image can be taken even in an extremely low illuminance environment or in the dark.
- NIR-R near-infrared light
- -G near-infrared light
- RGB red light
- G green light
- B blue light
- NIR-R near-infrared light
- red light (R), green light (G) or blue light (B) and the corresponding three types of near-infrared light (NIR-R, -G, -B) are detected by the same pixel.
- a photodetection device has also been proposed (see Patent Documents 5 and 6).
- an optical filter that transmits only red light (R) and the corresponding near infrared light (NIR-R), green light (G) and the corresponding near infrared light are periodically arranged. .
- the conventional solid-state imaging device described above has the following problems.
- the near-infrared light detection pixels in the solid-state imaging devices described in Patent Documents 2 to 4 are configured not to provide an infrared filter, but to provide only an RGB color filter, thereby blocking the incidence of visible light. Therefore, these solid-state imaging devices cannot selectively detect near-infrared light having a specific wavelength. That is, with the solid-state imaging devices described in Patent Documents 2 to 4, it is difficult to capture a color image in an extremely low illumination environment or in the dark.
- the light detection devices described in Patent Documents 5 and 6 are assumed to be applied to the technique described in Patent Document 1, but transmit only a specific wavelength in the visible region and a specific wavelength in the near-infrared region.
- Other optical filters that reflect light are difficult to design.
- high-precision film thickness control is required, and the manufacturing process is complicated. Become. For this reason, the photodetectors described in Patent Documents 5 and 6 are required to be further improved in terms of manufacturing cost and manufacturing process.
- an object of the present invention is to provide a solid-state imaging device and an imaging apparatus capable of photographing color images in a wide range of illuminance environments from normal illuminance to darkness (0 lux).
- the solid-state imaging device includes a visible light detection region that receives visible light and a near-infrared light detection region that receives near-infrared light, and the visible light detection region includes a first visible light detection region.
- a third visible light pixel that receives third visible light is provided, and in the near infrared light detection region, a first near infrared pixel that receives the first near infrared light, the first A second near-infrared light pixel that receives a second near-infrared light having a wavelength different from that of the near-infrared light, and a third near-infrared light having a wavelength different from that of the first and second near-infrared lights.
- a third near infrared pixel that receives light is provided.
- the solid-state imaging device includes a first pixel that receives the first visible light and the first near-infrared light correlated with the first visible light, and the first visible light.
- the second pixel receiving the second visible light having a different wavelength and the second near-infrared light having a correlation with the second visible light, and the first and second visible light have different wavelengths.
- a third pixel that receives a third visible light and a third near-infrared light having a correlation with the third visible light, and the first pixel includes a pixel other than the first visible light.
- An optical filter that reflects and / or absorbs visible light and an optical filter that reflects or absorbs near-infrared light in a specific wavelength range are stacked, and the second pixel has the second visible light.
- the third pixel includes an optical filter that reflects and / or absorbs visible light other than the third visible light, and reflects and / or absorbs near-infrared light in a specific wavelength range. And an optical filter to be stacked.
- An imaging apparatus includes the solid-state imaging element described above.
- the imaging apparatus analyzes a signal acquired by the solid-state imaging device and generates a color image based on the first to third visible light and / or a color image based on the first to third near-infrared light. You may have a production
- the present invention it is possible to realize a solid-state imaging device and an imaging apparatus that can capture color images in a wide range of illuminance environments from normal illuminance to darkness (0 lux) and that is easier to manufacture than conventional products.
- FIGS. 3A and 3B are cross-sectional views illustrating a schematic configuration of a pixel portion of the solid-state imaging device according to the first embodiment of the present invention, in which a represents a pixel configuration of a visible light detection region, and b represents a near infrared light detection region. A pixel structure is shown.
- FIGS. 3A to 3C are schematic diagrams illustrating a configuration example of the interference filter illustrated in FIG. 2, in which a is an interference filter 31R, b is an interference filter 31B, and c is an interference filter 31G.
- FIGS. 3A to 3C are schematic diagrams illustrating a configuration example of the interference filter illustrated in FIG. 2, in which a is an interference filter 31R, b is an interference filter 31B, and c is an interference filter 31G. It is a figure which shows the characteristic of interference filter 31R, 31G, 31B of the structure shown in FIG. It is a top view which shows the pixel arrangement example of the solid-state image sensor of the modification of the 1st Embodiment of this invention.
- FIGS. 7A to 7C are schematic diagrams illustrating a schematic configuration of a pixel portion of a solid-state imaging device according to a second embodiment of the present invention, where a is an interference filter 31R, b is an interference filter 31B, and c is an interference filter 31G.
- FIGS. 7A to 7C are schematic diagrams illustrating a schematic configuration of a pixel portion of a solid-state imaging device according to a modification of the second embodiment of the present invention, where a is an interference filter 31R, b is an interference filter 31B, and c is an interference filter 31G. is there. It is sectional drawing which shows typically schematic structure of the solid-state image sensor of the 3rd Embodiment of this invention.
- FIG. 5 is a diagram showing spectral transmission characteristics of an optical filter that cuts near infrared light of 650 to 900 nm. It is a figure which shows the spectral transmission characteristic at the time of laminating
- a is a diagram showing the spectral transmission characteristics of a bandpass filter having a center wavelength of 750 nm
- b is a diagram showing the spectral transmission characteristics of a short-pass filter that cuts near-infrared light of 890 nm or more.
- a is a schematic diagram illustrating a filter configuration example of a solid-state imaging device according to the third embodiment of the present invention
- b is a diagram illustrating the spectral transmission characteristics thereof.
- a is a schematic diagram which shows the other filter structural example of the solid-state image sensor of the 3rd Embodiment of this invention, and b is the figure which shows the spectral transmission characteristic.
- a is a schematic diagram which shows the other filter structural example of the solid-state image sensor of the 3rd Embodiment of this invention, and b is the figure which shows the spectral transmission characteristic.
- a is a top view which shows the example of a pixel arrangement
- b is a figure which shows the spectral characteristics of the optical filter provided on each pixel of a.
- It is a conceptual diagram which shows the basic composition of the imaging device of the 5th Embodiment of this invention. It is a figure which shows typically the structure of the imaging device of the modification of the 5th Embodiment of this invention.
- a is a plan view showing a pixel arrangement example of the visible light detection solid-state imaging element 6
- b is a plan view showing a pixel arrangement example of the near-infrared light detection solid-state imaging element 40.
- FIG. 1 is a plan view showing an arrangement example of pixels in the solid-state imaging device of the present embodiment
- FIG. 2 is a cross-sectional view showing a schematic configuration of a pixel portion.
- the solid-state imaging device 1 of the present embodiment includes a visible light detection region 2 for detecting visible light and a near infrared light detection region 3 for detecting near infrared light. .
- the visible light detection region 2 is provided with three types of pixels having different detection wavelengths.
- the three types of pixels provided in the visible light detection region 2 are respectively “first visible light pixel”, “second visible light pixel”, and “third visible light pixel”, for example, the first visible light pixel is red.
- the light R can be detected, the green light G can be detected by the second visible light pixel, and the blue light B can be detected by the third visible light pixel.
- each pixel in the visible light detection region 2 reflects and / or absorbs visible light other than the red light R on the photoelectric conversion layer 11 that detects incident light as an electrical signal, as shown in FIG. 2A.
- the red light filter 21R, the green light filter 21G that reflects and / or absorbs visible light other than the green light G, and the blue light filter 21B that reflects and / or absorbs visible light other than the blue light B are provided. That's fine.
- the photoelectric conversion layer 11 detects incident light as an electrical signal, and has a configuration in which a plurality of photoelectric conversion portions are formed on a substrate such as silicon.
- the structure of the photoelectric conversion layer 11 is not particularly limited, and a CCD (Charge-Coupled Device), a CMOS (Complementary Metal-Oxide Semiconductor) structure, or the like can be employed.
- the red light filter 21R, the green light filter 21G, and the blue light filter 21B are respectively formed on the corresponding photoelectric conversion units.
- each pixel in the visible light detection region 2 may be provided with an infrared light cut filter 22 that reflects and / or absorbs infrared light.
- the infrared light cut filter 22 may be formed integrally with each pixel, but may be a separate member.
- Each pixel in the visible light detection region 2 may be provided with an on-chip lens, a flattening layer, or the like.
- the transmission wavelength of each color filter provided on the photoelectric conversion layer 11 is not limited to the red light R, the green light G, and the blue light B described above, and is appropriately selected according to the specifications of the solid-state imaging device. can do. Further, the material for forming each color filter is not particularly limited, and a known material can be used.
- the near infrared light detection region 3 is also provided with three types of pixels having different detection wavelengths.
- the three types of pixels provided in the near-infrared light detection region 3 are “first near-infrared pixel”, “second near-infrared pixel”, and “third near-infrared pixel”, respectively.
- Near-infrared light having a correlation with the red light R is detected in the near-infrared pixel (hereinafter referred to as near-infrared light NIR-R), and the second near-infrared pixel is correlated with the green light G.
- near-infrared light NIR-G Light in a near-infrared region
- near-red light light in the near-infrared region
- blue light B light in the third near-infrared pixel. It can be configured to detect external light NIR-B).
- the near infrared light NIR-R is light having an arbitrary wavelength in the range of 700 to 830 nm
- the near infrared light NIR-G is light having an arbitrary wavelength in the range of 880 to 1200 nm
- the infrared light NIR-B is light having an arbitrary wavelength in the range of 830 to 880 nm, and is light having a different wavelength.
- each pixel in the near-infrared light detection region 3 includes an interference filter 31R that selectively transmits the near-infrared light NIR-R on the photoelectric conversion layer 11, and a near-infrared light NIR-G.
- An interference filter 31G that selectively transmits light and an interference filter 31B that selectively transmits light NIR-B in the near infrared region may be provided.
- the characteristics of these interference filters are not particularly limited.
- the interference filter 31R is a short-pass filter that transmits near-infrared light having a wavelength longer than 800 nm to 50% or less, and the interference filter 31G has a central wavelength.
- the interference filter 31B can be a long-pass filter having a transmittance of near-infrared light having a wavelength shorter than 890 nm of 50% or less.
- the configuration of the interference filters 31R, 31G, and 31B is not particularly limited.
- the interference filters 31R, 31G, and 31B may be configured such that two types of dielectric layers having different refractive indexes are alternately formed.
- FIGS. 3a to 3c are schematic diagrams showing configuration examples of the interference filters 31R, 31G, and 31B
- FIG. 4 is a diagram showing the characteristics thereof.
- the interference filters 31R, 31G, and 31B are formed on the photoelectric conversion layer 11 from the low refractive index layers 31L 1 to 31L 4 made of a dielectric material and the low refractive index layers 31L 1 to 31L 4 .
- high refractive index layers 31H 1 to 31H 5 made of a dielectric material having a high refractive index are formed.
- the low refractive index layers 31L 1 to 31L 4 can be made of, for example, silicon dioxide (SiO 2 ), and the high refractive index layers 31H 1 to 31H 5 are made of, for example, titanium oxide (TiO 2 ) or niobium pentoxide. (Nb 2 O 5 ), silicon nitride (Si 3 N 4 ), or the like can be used.
- the interference filters 31R, 31G, and 31B include the low-refractive index layers 31L 1 to 31L 4 and the high-refractive index layers 31H 1 , 31H 2 , 31H 4 , and 31H 5 positioned on the light incident side and the light output side, respectively. common in the filter, mutually different only the thickness of the high refractive index layer 31H 3 in the thickness direction the middle position.
- the interference filters 31R and 31G the thickness of the low refractive index layer 31L 1 ⁇ 31L 4 in 31B is ⁇ 0 / (4 ⁇ n L ), the high refractive index layer 31H 1, 31H 2, 31H 4 , the thickness of 31H 5 is lambda 0 / (4 ⁇ n H ).
- the thickness of the high refractive index layer 31H 3 located in the middle for example interference filter 31R is 1.74 ⁇ ⁇ 0 / (4 ⁇ n H), interference filter 31B is 2 ⁇ ⁇ 0 / (4 ⁇ n H ), and the interference filter 31G is 2.21 ⁇ ⁇ 0 / (4 ⁇ n H ).
- Interference filter 31R shown in FIG. 3a ⁇ c, 31G, at 31B it is possible to change the transmission wavelength by changing the thickness of the high refractive index layer 31H 3 positioned in the thickness direction center, a layer other than the further intermediate layer Is common to all interference filters, the manufacturing process can be simplified.
- FIGS. 5a to 5c are schematic diagrams showing other configuration examples of the interference filters 31R, 31G, and 31B
- FIG. 6 is a diagram showing the characteristics thereof.
- the interference filters 31R, 31G, and 31B are not limited to the configuration shown in FIGS. 3A to 3C described above.
- the low refractive index layer 31L 0 is used as a spacer in the middle in the thickness direction. By changing the thickness, the transmission wavelength can be changed.
- interference filter 31R, a low refractive index layer 31L 0 are not provided, other high refractive index layer as an intermediate layer 31H 1, 2 times the thickness of the high-refraction 31H 3
- the rate layer 31H 2 is provided.
- the interference filter 31B, 31G is divided a high refractive index layer 31H 2 into two high refractive index layers 31H 21 high-refractive index layer 31H 22, it is provided with the low refractive index layer 31L 0 therebetween.
- the interference filter 31G, rather than interference filter 31B the thickness of the low refractive index layer 31L 0 is increased.
- the interference filters 31R, 31G, and 31B shown in FIGS. 5a to 5c the high refractive index layers 31H 1 and 31H 3 and the low refractive index layers 31L 1 and 31L 2 other than the intermediate layer are common to the interference filters. As shown in FIG. 6, the interference filters 31R, 31G, and 31B can suppress variations in characteristics among the filters as compared to the configurations shown in FIGS. 3a to 3c.
- the number of layers in each of the interference filters 31R, 31G, and 31B is not particularly limited, but it is preferable that the high refractive index layers are three or more layers, and a total of five or more layers are stacked, more preferably each layer. 5 layers or more, more preferably 10 layers or more for each layer. Thereby, the frequency characteristic of each interference filter can be made steep.
- each pixel in the near infrared light detection region 3 has a visible light cut filter 32 that reflects and / or absorbs visible light in order to eliminate the influence of visible light and detect near infrared light with high accuracy. It may be provided.
- the visible light cut filter 32 may be formed integrally with each pixel, but may be a separate member.
- an on-chip lens, a flattening layer, or the like can be provided for each pixel in the near infrared light detection region 3.
- each pixel in the near-infrared light detection region 3 is provided with a red light filter 21R, a green light filter 21G, a blue light filter 21B, or other color filters in an upper layer or a lower layer than the interference filters 31R, 31G, 31B. It may be done. In that case, it is desirable to form interference filters 31R, 31G, and 31B above the red light filter 21R, the green light filter 21G, and the blue light filter 21B, so that light from an oblique direction is incident on other pixels. Can be suppressed.
- the solid-state imaging device 1 of the present embodiment detects visible light at each pixel in the visible light detection region 2 and detects near-infrared light at each pixel in the near-infrared light detection region 3.
- each photoelectric conversion unit in the visible light detection region 2 has visible light (R, R) in a specific wavelength band transmitted through the color filters 21R, 21G, and 21B arranged thereon. G, B) are incident.
- transmitted color filter 21R, 21G, 21B is output. Thereby, a color image derived from visible light can be obtained.
- near-infrared light in a specific wavelength band transmitted through the interference filters 31R, 31G, and 31B disposed thereon is incident on each photoelectric conversion unit in the near-infrared light detection region 3.
- Each photoelectric conversion unit outputs an electrical signal corresponding to the intensity of near-infrared light (NIR-R, NIR-G, NIR-B) in the wavelength band transmitted through the interference filters 31R, 31G, 31B.
- near-infrared light NIR-R, NIR-G, and NIR-B are correlated with red light R, green light G, and blue light B.
- a color image equivalent to light detection can be formed.
- the solid-state imaging device of the present embodiment may perform detection only in either the visible light detection region 2 or the near infrared light detection region 3.
- visible light is detected by operating only each pixel in the visible light detection region 2 during the daytime or using only a signal from each photoelectric conversion unit in the visible light detection region 2, and near infrared light detection at nighttime.
- Near-infrared light can also be detected by operating only each pixel in region 3 or using only signals from each photoelectric conversion unit in near-infrared light detection region 3.
- the visible light detection region 2 and the near infrared light detection region 3 pixels it is also possible to always detect using both the visible light detection region 2 and the near infrared light detection region 3 pixels.
- the red light R detected in the visible light detection region 2 using the signals of the near infrared light NIR-R, NIR-G, and NIR-B detected in the near infrared light detection region 3.
- the green light G and blue light B signals can be corrected to remove the influence of the near infrared light component.
- the solid-state imaging device of the present embodiment is provided with a visible light detection region and a near-infrared light detection region, each region is provided with three types of pixels having different detection wavelengths, and red light R, Detects green light G, blue light B, and near-infrared light NIR-R, NIR-G, and NIR-B correlated with these lights, so it has a wide range of illuminance from normal illuminance to darkness (0 lux) Color images can be taken in the environment.
- the solid-state imaging device of the present embodiment detects with different pixels for each wavelength, each pixel can be easily designed and the film configuration can be simplified, so that it can be manufactured more easily than conventional products. It becomes possible. Furthermore, the configuration of the solid-state imaging device of the present embodiment can be applied to both the backside illumination type and the frontside illumination type, but the backside illumination type that is less affected by reflected light is preferable.
- FIG. 7 is a plan view showing an arrangement example of each pixel in the solid-state imaging device of the present modification.
- the visible light detection region 2 and the near-infrared light detection region 3 are alternately formed by 4 pixels.
- the present invention is not limited to this, and visible light detection is performed.
- the region and the near infrared light detection region can be formed in any arrangement.
- each pixel for receiving visible light is formed in one region (visible light detection region 2), and each for receiving near-infrared light.
- the pixels may be formed collectively in another region (near infrared light detection region 3).
- FIG. 8 is a cross-sectional view showing a schematic configuration of a pixel portion of the solid-state imaging device of the present embodiment.
- the same components as those shown in FIG. 5 are denoted by the same reference numerals, and detailed description thereof is omitted.
- an antireflection film 33 is formed on each pixel in the near infrared light detection region 3.
- the antireflection film 33 is for preventing reflection at the interface between the interference filters 31R, 31G, and 31B and other members and layers, and is laminated on the outermost layer on the light emission side of the interference filters 31R, 31G, and 31B. Has been. That is, in the solid-state imaging device 20 of the present embodiment, the interference filters 31R, 31G, and 31B are formed on the antireflection film 33.
- the antireflection film 33 is formed of a material having a refractive index of 1.5 to 2.5, preferably 1.9 to 2.1.
- the antireflection film 33 can be formed of, for example, SiN, C, SiON, Ni, silver chloride, or the like, but is not limited thereto, and is formed of other materials as long as the refractive index is within the above-described range. May be.
- the thickness of the antireflection film 33 is not particularly limited, but is, for example, 5 to 1000 nm.
- the antireflection film 33 is provided on the light emission side outermost layer of the interference filter as in the solid-state imaging device 20 of the present embodiment, the dispersion of the spectral characteristics can be suppressed and the transmission characteristics can be sharpened. Occurrence of the phenomenon that the sensitivity of light called ripples fluctuates up and down can be suppressed.
- silicon is used from the viewpoint of improving spectral transmission characteristics. It is preferable to provide an antireflection film also on the substrate.
- FIG. 9 is a cross-sectional view showing a schematic configuration of a pixel portion of the solid-state imaging device of the present embodiment.
- the same components as those of each pixel shown in FIG. 8 are denoted by the same reference numerals, and detailed description thereof is omitted.
- the solid-state imaging device 30 of the present modification example has light-reflecting-side outermost layers and light-emitting-side outermost layers of the interference filters 31R, 31G, and 31B, respectively, higher than the high refractive index layers 31H 1 to 31H 5.
- Low refractive index layers 34L 1 and 34L 2 made of a dielectric material having a low refractive index are laminated, and an antireflection film 33 is laminated on the low refractive index layer 34L 1 which is the outermost layer on the light emission side.
- the low refractive index layers 34L 1 and 34L 2 may be provided in at least one of the outermost layers on the light incident side and the light emission side of the interference filters 31R, 31G, and 31B.
- the low refractive index layers 34L 1 and 34L 2 can be formed of the same material as the low refractive index layers 31L 1 to 31L 4 described above, for example. Further, the thicknesses of the low refractive index layers 34L 1 and 34L 2 may be different from each other, and may be different from the low refractive index layers 31L 1 to 31L 4 .
- the thickness of the low refractive index layers 31L 1 to 31L 4 Is ⁇ 0 / (4 ⁇ n L )
- the low refractive index layer 34L 1 is 1.2 ⁇ ⁇ 0 / (4 ⁇ n L )
- the low refractive index layer 34L 2 is 0.5 ⁇ ⁇ 0 / ( 4 ⁇ n L ).
- an antireflection film 33 is provided in each pixel, and the thicknesses of the interference filters 31R, 31G, and 31B on the light incident side outermost layer and / or the light output side outermost layer are mutually different. Since different low refractive index layers 32L 1 and 31L 2 are provided, it is possible to greatly improve the transmission characteristics particularly in the visible light region.
- FIG. 10 is a cross-sectional view schematically showing a schematic configuration of the solid-state imaging device of the present embodiment.
- the same components as those of each pixel shown in FIG. 2 are denoted by the same reference numerals, and detailed description thereof is omitted.
- the visible light detection region and the near-infrared detection region are configured by separate pixels, but the present invention is not limited to this, and visible light
- the detection area and the near-infrared detection area may partially or entirely overlap. That is, the solid-state imaging device of the present invention may include a pixel that detects both visible light and near-infrared light.
- the solid-state imaging device 40 of the present embodiment includes a first pixel that receives first visible light and first near-infrared light that is correlated with the first visible light, A second pixel that receives a second visible light having a wavelength different from that of the first visible light and a second near-infrared light correlated with the second visible light; and the first and second visible lights And a third pixel that receives third visible light having a different wavelength and third near-infrared light correlated with the third visible light.
- the solid-state imaging device 1 of the present embodiment is provided with three types of pixels having different detection wavelengths.
- the first to third visible lights are red light (R), green light (G), and blue light (B)
- the first to third near-infrared lights are correlated with the red light.
- Near-infrared region light NIR-R
- near-infrared region light correlated with green light NIR-G
- near-infrared region light correlated with blue light NIR- B
- near infrared light NIR-R is light having an arbitrary wavelength in the range of 700 to 830 nm
- near infrared light NIR-G is light having an arbitrary wavelength in the range of 880 to 1200 nm
- the external light NIR-B is light having an arbitrary wavelength in the range of 830 to 880 nm, and is light having different wavelengths.
- an optical filter that reflects and / or absorbs visible light other than the first to third visible lights on the photoelectric conversion layer 11 and a near wavelength region.
- An optical filter that reflects or absorbs infrared light is laminated.
- Optical filter When the first to third visible lights are red light (R), green light (G), and blue light (B), respectively, as shown in FIG.
- R red light
- G green light
- B blue light
- a red color filter 21R that reflects and / or absorbs visible light other than red light R
- a green color filter 21G that reflects and / or absorbs visible light other than green light G
- a visible light other than blue light B a visible light other than blue light B.
- / or the blue color filter 21B which absorbs is provided.
- each color filter 21R, 21G, and 21B is not particularly limited, and includes a visible light cut filter and an interference filter that cut visible light of a specific wavelength in addition to those using an organic material having absorption at a specific wavelength. It can also be used. Note that the transmission wavelengths of the color filters 21R, 21G, and 21B provided on the photoelectric conversion layer 11 are not limited to the red light R, the green light G, and the blue light B described above. It can be selected as appropriate according to the conditions.
- the above-described color filters 21R, 21G, and 21B are disposed in the region directly above each photoelectric conversion unit of the photoelectric conversion layer 11, and a near-infrared light cut filter that reflects and / or absorbs near-infrared light in a specific wavelength region.
- the near-infrared light cut filter includes, for example, a near-infrared cut filter 31R that reflects or absorbs near-infrared light of 750 nm or more, and a near-infrared cut filter 31G that reflects or absorbs near-infrared light of 650 to 900 nm.
- One or two or more near-infrared cut filters 31B that reflect or absorb near-infrared light of 550 to 860 nm and / or 900 nm or more can be provided.
- the near-infrared light cut filters 31R, 31G, and 31B are, for example, interference filters having a structure in which two types of dielectric layers having different refractive indexes as shown in FIGS. 3, 5, 8, and 9 are alternately stacked. Can be realized.
- the near-infrared light cut filter used in the solid-state imaging device of the present embodiment is not limited to the configuration using the above-described interference filter, and may be any filter that cuts near-infrared light having a specific wavelength. Two or more short-pass filters, long-pass filters, and band-pass filters can be used in combination.
- ⁇ Red pixel> 11 is a diagram showing the spectral transmission characteristics of the red color filter 21R
- FIG. 12 is a diagram showing the spectral transmission characteristics of a short pass filter that cuts near infrared light of 820 nm or more
- FIG. 13 is shown in FIG. It is a figure which shows the spectral characteristic at the time of laminating
- a near infrared light cut filter having the spectral characteristics shown in FIG. 12 may be stacked as the near infrared light cut filter 31R. Accordingly, the spectral transmission characteristics shown in FIG. 13 are obtained in the red pixel, and only the red light R enters the photoelectric conversion unit in the visible region, and only the red near-infrared light NIR-R enters in the near infrared region.
- ⁇ Green pixel> 14 is a diagram showing the spectral transmission characteristics of the green color filter 21G
- FIG. 15 is a diagram showing the spectral transmission characteristics of an optical filter that cuts near-infrared light of 650 to 900 nm
- FIG. 16 is shown in FIG. It is a figure which shows the spectral transmission characteristic at the time of laminating
- a near infrared light cut filter having the spectral characteristics shown in FIG. 15 may be stacked as the near infrared light cut filter 31G. Accordingly, the spectral transmission characteristics shown in FIG. 16 are obtained in the green pixel, and only the green light G is incident in the visible region and only the green near infrared light NIR-G is incident in the near infrared region.
- FIG. 17 is a diagram showing the spectral transmission characteristics of the blue color filter 21B
- FIG. 18a is a diagram showing the spectral transmission characteristics of a bandpass filter having a center wavelength of 750 nm
- FIG. 19 is a diagram showing spectral transmission characteristics of a short pass filter
- FIG. 19 is a diagram showing spectral transmission characteristics when the optical filter shown in FIG. 17 and the optical filters shown in FIGS.
- the bandpass filter having the spectral characteristics shown in FIG. 18a and the short path having the optical characteristics shown in FIG. What is necessary is just to laminate
- the spectral transmission characteristic shown in FIG. 19 is obtained in the blue pixel, and only the blue light B is incident in the visible region and only the blue near infrared light NIR-B is incident in the near infrared region.
- FIG. 20 is a diagram showing the spectral transmission characteristics of the solid-state imaging device 40 shown in FIG. 10, and FIGS. 21 to 23 are diagrams showing an example of the filter configuration of the solid-state imaging device 40 of this embodiment and the spectral transmission characteristics thereof.
- the solid-state imaging device composed of the red, green, and blue pixels having the spectral transmission characteristics shown in FIGS. 13, 16, and 19 described above exhibits the spectral transmission characteristics shown in FIG.
- a near-infrared light cut filter that cuts light of around 850 nm is laminated on the red color filter 21R and the green color filter 21G, and only on the blue color filter 21B.
- a near-infrared light cut filter that cuts light of around 708 nm is stacked.
- a near-infrared light cut filter that cuts near-infrared light of 860 nm or more is further laminated on the red pixel and the blue pixel.
- the above-described interference filter can be used for each of the near-infrared light cut filters described above.
- the solid-state imaging device 1 including the optical filter having this configuration exhibits the spectral transmission characteristics shown in FIG. 21b.
- the near-infrared light cut filter 31G of the green pixel may be an infrared cut filter that cuts light of a wider band around 850 nm.
- the solid-state imaging device 1 including the optical filter having this configuration exhibits the spectral transmission characteristics shown in FIG. 22b.
- the green color filter 21G and the blue color filter 21B are stacked with a near-infrared light cut filter that cuts light at around 708 nm, and the green pixel is cut at a wider band around 850 nm.
- the infrared cut filter which performs this can also be configured such that a blue pixel is further laminated with a near infrared light cut filter which cuts near infrared light of 890 nm or more.
- a red color filter 21R and a near-infrared light cut filter that cuts near-infrared light of 820 nm or more are stacked on the red pixel, and a buffer layer is provided between the near-infrared cut filter and the red color filter. May be provided.
- the solid-state imaging device 1 including the optical filter having this configuration exhibits the spectral transmission characteristics illustrated in FIG.
- the 10 to 23 show examples of configurations in which the near-infrared light cut filters 31R, 31G, and 31B are provided on the color filters 21R, 21G, and 21B, but the present invention is not limited to this,
- the near-infrared light cut filters 31R, 31G, and 31B can be formed in the lower layer, and the color filters 21R, 21G, and 21B can be formed in the upper layer.
- the color filters 21R, 21G, and 21B are formed on the photoelectric conversion layer 11 side, and the near-infrared light cut filters 31R, 31G, and 31B are formed on the light incident side. Is preferably formed.
- the color filters 21R, 21G, and 21B and the near-infrared light cut filters 31R, 31G, and 31B do not need to be directly stacked, and are flattened therebetween.
- a layer, a buffer layer, or the like may be provided.
- an on-chip lens or the like may be provided for each pixel of the solid-state imaging device 1 of the present embodiment.
- the solid-state imaging device 40 of the present embodiment detects red light R and red near-infrared light NIR-R with red pixels, detects green light G and green near-infrared light NIR-G with green pixels, and detects blue pixels. To detect blue light B and blue near-infrared light NIR-B. Each photoelectric conversion unit outputs an electrical signal corresponding to the detected light intensity, thereby obtaining a color image derived from visible light or near-infrared light.
- the solid-state imaging device has a configuration in which an optical filter for visible light and an optical filter for near infrared light are stacked, so that the red light R and the green light have a simple configuration.
- G, blue light B and near-infrared light NIR-R, NIR-G, NIR-G correlated with these lights can be dispersed and detected.
- Near-infrared light NIR-R, NIR-G, and NIR-B correlate with red light R, green light G, and blue light B.
- a color image equivalent to visible light detection can be formed.
- a color image can be taken in a wide illuminance environment from normal illuminance to darkness (0 lux).
- the present invention is not limited to this, and the detection wavelength is not limited to this.
- Four or more different types of pixels may be provided.
- the first pixel that receives the first visible light and the first near-infrared light correlated with the first visible light, and the first visible light have different wavelengths.
- the third pixel that receives the third near-infrared light that has a correlation with the three visible lights one or more pixels that receive any one of the first to third visible lights (visible light pixels) ) May be provided.
- the configuration of the solid-state imaging device of the present embodiment can be applied to both the back side illumination type and the front side illumination type, but the back side illumination type with little influence of reflected light is preferable.
- the other configurations and effects of the solid-state imaging device of the present embodiment are the same as those of the first embodiment and the second embodiment described above.
- FIG. 24A is a diagram illustrating a pixel arrangement example of the solid-state imaging device of the present embodiment
- FIG. 24B is a diagram illustrating spectral characteristics of an optical filter provided on the pixel.
- NIR-R, NIR-G, and NIR-B are detected by different pixels, but a plurality of near-red light having different wavelengths is detected. It is also possible to adopt a configuration in which external light is detected by the same pixel.
- the solid-state imaging device 10 of this embodiment includes a pixel that detects red light R and red near-infrared light NIR-R, green light G and red near-infrared light NIR-R, A pixel for detecting broadband light NIR-W including blue near-infrared light NIR-B and green near-infrared light NIR-G, and a pixel for detecting blue light B and green near-infrared light NIR-G are provided. Further, in the solid-state imaging device 10 of the present embodiment, in addition to pixels that receive both visible light and near-infrared light, pixels that receive only visible light such as green light G can be provided.
- the solid-state imaging device 10 of the present embodiment can reduce the manufacturing cost because the pixel configuration is simple.
- FIG. 25 is a conceptual diagram showing the configuration of the solid-state imaging device of the present embodiment.
- the solid-state imaging device 50 of this embodiment includes the solid-state imaging device 1 of the first embodiment described above, and generates a color image based on signals output from these.
- the imaging device 50 analyzes a signal acquired by the solid-state imaging device 1, and uses a signal based on visible light output from each pixel, a signal based on near-infrared light, or both to generate a color image.
- the image generation unit 43 generates a color image using only the signal 41 based on visible light
- the image generation unit 43 generates a color image using only the signal 41 based on visible light
- the signal 42 based on near-infrared light is used. To generate a color image.
- the image generation unit 43 can also generate a color image using both the signal 41 based on visible light and the signal 42 based on near-infrared light.
- the signal 42 based on the near-infrared light is used to correct the signal 41 based on the visible light to generate a color image from which the influence of the near-infrared light component is removed.
- the “night mode” a signal 41 based on near-infrared light is corrected using a signal 41 based on visible light, and the influence of visible light components included in environmental light such as headlights is removed. Generate an image. Thereby, the detection accuracy of visible light and near-infrared light is improved, and color reproducibility in color photography can be improved.
- the imaging apparatus of the present embodiment includes a solid-state imaging device that detects red light R, green light G, and blue light B and near infrared light NIR-R, NIR-G, and NIR-B correlated with those lights. Therefore, a color image can be taken in a wide range of illuminance environments from normal illuminance to darkness (0 lux).
- the present invention is not limited to this, and the solid-state imaging devices of the second to fourth embodiments are not limited thereto. Even if it is used, the image can be taken in the same manner, and the same effect can be obtained.
- FIG. 26 is a diagram schematically illustrating the configuration of an imaging apparatus according to this modification.
- the imaging device 51 of this modification is provided with a solid-state imaging device 6 for detecting visible light in addition to the solid-state imaging device 40 of the third embodiment described above.
- FIG. 27A is a plan view showing an example of pixel arrangement of the solid-state image sensor 6 for detecting visible light
- FIG. 27B is a plan view showing an example of pixel arrangement of the solid-state image sensor 40 for detecting near-infrared light
- the visible light detecting solid-state imaging device 6 includes a pixel that detects red light R, a pixel that detects green light G, and a pixel that detects blue light B.
- the solid-state imaging device 40 includes a pixel that detects red light R and red near-infrared light NIR-R, and a pixel that detects green light G and green near-infrared light NIR-G.
- the infrared light cut filter 5 may be disposed on the light incident surface side of the visible light detection solid-state imaging element 6 as necessary.
- the imaging device 51 of the present modified example divides incident light into two using an optical element such as a half mirror 4 and enters the solid-state imaging element 6 for visible light detection and the solid-state imaging element 40 for near-infrared light detection. Let The visible light detection solid-state image sensor 6 detects red light R, green light G, and blue light B, and the near-infrared light detection solid-state image sensor 40 detects red light R, green light G, blue light B, and Near-infrared light NIR-R, NIR-G, and NIR-B correlated with these lights are detected.
- the imaging device 51 of this modification detects visible light and near-infrared light with separate solid-state imaging elements, compared to a configuration in which a visible light detection area and a near-infrared light detection area are provided on the same element.
- the configuration of the pixel becomes simple, and the manufacturing cost of the solid-state imaging device can be reduced.
- visible light and near-infrared light separated from one light are detected by the corresponding pixels of the two solid-state imaging elements, so that the visible light and the per-region light and Corresponding near-infrared light can be detected and the density between pixels of the same wavelength is also increased, so that higher resolution can be ensured.
- the configuration and effects other than those described above in the imaging apparatus of the present modification are the same as those in the fifth embodiment described above.
- Solid-state imaging device 1 Visible light detection region 3 Near-infrared light detection region 4 Half mirror 5, 22 Infrared light cut filter 6 Solid-state imaging device for visible light detection 11 Photoelectric conversion layer 21B , 21G, 21R Color filter 31B, 31G, 31R Interference filter (Near-infrared light cut filter) 31H 1 to 31H 5 , 31H 21 , 31H 22 , 31H 31 , 31H 32 high refractive index layer 31L 0 to 31L 4 , 34L 1 , 34L 2 low refractive index layer 32 visible light cut filter 33 antireflection film 41 derived from visible light Signals 42 Signals derived from near-infrared light 43 Image generation units 50, 51 Imaging device
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Color Television Image Signal Generators (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Filters (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
又は、本発明に係る固体撮像素子は、第1の可視光及び前記第1の可視光と相関関係にある第1の近赤外光を受光する第1画素と、前記第1の可視光とは波長が異なる第2の可視光及び前記第2の可視光と相関関係にある第2の近赤外光を受光する第2画素と、前記第1及び第2の可視光とは波長が異なる第3の可視光及び前記第3の可視光と相関関係にある第3の近赤外光を受光する第3画素と、を有し、前記第1画素には、前記第1の可視光以外の可視光を反射及び/又は吸収する光学フィルターと、特定波長域の近赤外光を反射又は/吸収する光学フィルターとが積層されており、前記第2画素には、前記第2の可視光以外の可視光を反射及び/又は吸収する光学フィルターと、特定波長域の近赤外光を反射又は/吸収する光学フィルターとが積層されており、前記第3画素には、前記第3の可視光以外の可視光を反射及び/又は吸収する光学フィルターと、特定波長域の近赤外光を反射及び/又は吸収する光学フィルターとが積層されている。
この撮像装置は、前記固体撮像素子で取得した信号を解析し、第1~第3の可視光に基づくカラー画像及び/又は第1~第3の近赤外光に基づくカラー画像を生成する画像生成部を有していてもよい。
先ず、本発明の第1の実施形態に係る固体撮像素子について説明する。図1は本実施形態の固体撮像素子における画素の配列例を示す平面図であり、図2は画素部分の概略構成を示す断面図である。図1に示すように、本実施形態の固体撮像素子1は、可視光を検出するための可視光検出領域2と、近赤外光を検出するための近赤外光検出領域3とを有する。
可視光検出領域2には、検出波長が異なる3種類の画素が設けられている。可視光検出領域2に設けられた3種の画素をそれぞれ「第1可視光画素」、「第2可視光画素」及び「第3可視光画素」とした場合、例えば第1可視光画素で赤色光Rを検出し、第2可視光画素で緑色光Gを検出し、第3可視光画素で青色光Bを検出する構成とすることができる。
近赤外光検出領域3にも、検出波長が異なる3種類の画素が設けられている。近赤外光検出領域3に設けられた3種の画素をそれぞれ「第1近赤外画素」、「第2近赤外画素」及び「第3近赤外画素」とした場合、例えば第1近赤外画素で赤色光Rと相関関係にある近赤外領域の光(以下、近赤外光NIR-Rという。)を検出し、第2近赤外画素で緑色光Gと相関関係にある近赤外領域の光(以下、近赤外光NIR-Gという。)を検出し、第3近赤外画素で青色光Bと相関関係にある近赤外領域の光(以下、近赤外光NIR-Bという。)を検出する構成とすることができる。
次に、本実施形態の固体撮像素子の動作について説明する。本実施形態の固体撮像素子1は、可視光検出領域2の各画素で可視光を検出し、近赤外光検出領域3の各画素で近赤外光を検出する。具体的には、図2aに示すように、可視光検出領域2の各光電変換部には、その上に配置されたカラーフィルター21R,21G,21Bを透過した特定波長帯域の可視光(R,G,B)が入射する。そして、各光電変換部からは、カラーフィルター21R、21G,21Bを透過した波長帯域の可視光(R,G,B)の強度に対応する電気信号が出力される。これにより、可視光に由来するカラー画像を得ることができる。
次に、本発明の第1の実施形態の変形例に係る固体撮像素子について説明する。図7は本変形例の固体撮像素子における各画素の配列例を示す平面図である。図1に示す固体撮像素子1では、可視光検出領域2と近赤外光検出領域3を4画素ずつ交互に形成しているが、本発明はこれに限定されるものではなく、可視光検出領域と近赤外光検出領域は任意の配置で形成することができる。
次に、本発明の第2の実施形態に係る固体撮像素子について説明する。図8は本実施形態の固体撮像素子の画素部分の概略構成を示す断面図である。なお、図8においては、図5に示す各画素の構成と同じものには同じ符号を付し、その詳細な説明は省略する。図8に示すように、本実施形態の固体撮像素子20は、近赤外光検出領域3の各画素に反射防止膜33が形成されている。
反射防止膜33は、干渉フィルター31R,31G,31Bと他の部材や層との境界面での反射を防止するためのものであり、干渉フィルター31R,31G,31Bの光出射側最外層に積層されている。即ち、本実施形態の固体撮像素子20では、反射防止膜33上に、干渉フィルター31R,31G,31Bが形成されている。
次に、本発明の第2の実施形態の変形例に係る固体撮像素子について説明する。図9は本実施形態の固体撮像素子の画素部分の概略構成を示す断面図である。なお、図9においては、図8に示す各画素の構成と同じものには同じ符号を付し、その詳細な説明は省略する。
次に、本発明の第3の実施形態に係る固体撮像素子について説明する。図10は本実施形態の固体撮像素子の概略構成を模式的に示す断面図である。なお、図10においては、図2に示す各画素の構成と同じものには同じ符号を付し、その詳細な説明は省略する。
第1~第3の可視光がそれぞれ赤色光(R)、緑色光(G)、青色光(B)の場合、図1に示すように、光電変換層11の各光電変換部の直上域には、それぞれ赤色光R以外の可視光を反射及び/又は吸収する赤色カラーフィルター21R、緑色光G以外の可視光を反射及び/又は吸収する緑色カラーフィルター21G、青色光B以外の可視光を反射及び/又は吸収する青色カラーフィルター21Bが設けられている。
図11は赤色カラーフィルター21Rの分光透過特性を示す図であり、図12は820nm以上の近赤外光をカットするショートパスフィルターの分光透過特性を示す図であり、図13は図11に示す光学フィルターと図12に示す光学フィルターを積層した場合の分光特性を示す図である。
図14は緑色カラーフィルター21Gの分光透過特性を示す図であり、図15は650~900nmの近赤外光をカットする光学フィルターの分光透過特性を示す図であり、図16は図14に示す光学フィルターと図15に示す光学フィルターを積層した場合の分光透過特性を示す図である。
図17は青色カラーフィルター21Bの分光透過特性を示す図であり、図18aは中心波長750nmのバンドパスフィルターの分光透過特性を示す図であり、図18bは890nm以上の近赤外光をカットするショートパスフィルターの分光透過特性を示す図であり、図19は図17に示す光学フィルターと図18a,bに示す光学フィルターを積層した場合の分光透過特性を示す図である。
図20は図10に示す固体撮像素子40の分光透過特性を示す図であり、図21~23は本実施形態の固体撮像素子40のフィルター構成例とその分光透過特性を示す図である。前述した図13、図16及び図19に示す分光透過特性を示す赤色画素、緑色画素及び青色画素で構成された固体撮像素子は、図20に示す分光透過特性を示す。
次に、本実施形態の固体撮像素子40の動作について説明する。本実施形態の固体撮像素子40は、赤色画素で赤色光Rと赤色近赤外光NIR-Rを検出し、緑色画素で緑色光Gと緑色近赤外光NIR-Gを検出し、青色画素で青色光Bと青色近赤外光NIR-Bを検出する。そして、各光電変換部からは、検出された光の強度に対応する電気信号が出力され、これにより、可視光又は近赤外光に由来するカラー画像が得られる。
次に、本発明の第4の実施形態に係る固体撮像素子について説明する。図24aは本実施形態の固体撮像素子の画素配置例を示す図であり、図24bはその画素上に設けられた光学フィルターの分光特性を示す図である。前述した第1~第3の実施形態の固体撮像素子では、近赤外光NIR-R,NIR-G,NIR-Bをそれぞれ別の画素で検出しているが、波長が異なる複数の近赤外光を同一画素で検出する構成を採ることもできる。
次に、本発明の第5の実施形態に係る固体撮像装置について説明する。図25は本実施形態の固体撮像装置の構成を示す概念図である。図25に示すように、本実施形態の固体撮像装置50は、前述した第1の実施形態の固体撮像素子1を備え、これらから出力された信号に基づきカラー画像を生成する。
次に、本発明の第5の実施形態の変形例に係る撮像装置について説明する。図26は本変形例の撮像装置の構成を模式的に示す図である。図26に示すように、本変形例の撮像装置51は、前述した第3の実施形態の固体撮像素子40に加えて、可視光検出用固体撮像素子6が設けられている。
2 可視光検出領域
3 近赤外光検出領域
4 ハーフミラー
5、22 赤外光カットフィルター
6 可視光検出用固体撮像素子
11 光電変換層
21B、21G、21R カラーフィルター
31B、31G、31R 干渉フィルター(近赤外光カットフィルター)
31H1~31H5、31H21、31H22、31H31、31H32 高屈折率層
31L0~31L4、34L1、34L2 低屈折率層
32 可視光カットフィルター
33 反射防止膜
41 可視光に由来する信号
42 近赤外光に由来する信号
43 画像生成部
50、51 撮像装置
Claims (21)
- 可視光を検出する可視光検出領域と、
近赤外光を検出する近赤外光検出領域と、
を有し、
前記可視光検出領域には、
第1の可視光を受光する第1可視光画素、
前記第1の可視光とは波長が異なる第2の可視光を受光する第2可視光画素、
並びに前記第1及び第2の可視光とは波長が異なる第3の可視光を受光する第3可視光画素が設けられており、
前記近赤外光検出領域には、
第1の近赤外光を受光する第1近赤外画素、
前記第1の近赤外光とは波長が異なる第2の近赤外光を受光する第2近赤外光画素、
並びに前記第1及び第2の近赤外光とは波長が異なる第3の近赤外光を受光する第3近赤外光画素が設けられている固体撮像素子。 - 前記第1近赤外光画素には前記第1の近赤外光を選択的に透過する第1干渉フィルターが設けられ、
前記第2近赤外光画素には前記第2の近赤外光を選択的に透過する第2干渉フィルターが設けられ、
前記第3近赤外光画素には前記第3の近赤外光を選択的に透過する第3干渉フィルターが設けられている
請求項1に記載の固体撮像素子。 - 前記第1干渉フィルターは800nmよりも長波長の近赤外光の透過率が50%以下のショートパスフィルターであり、
前記第2干渉フィルターは中心波長が850nmのバンドパスフィルターであり、
前記第3干渉フィルターは890nmよりも短波長の近赤外光の透過率が50%以下のロングパスフィルターである
請求項2に記載の固体撮像素子。 - 前記第1~第3近赤外光画素には反射防止膜が形成されており、前記反射防止膜上に前記第1~第3干渉フィルターが形成されている請求項2又は3に記載の固体撮像素子。
- 前記第1~第3近赤外画素には、可視光を反射及び/又は吸収する可視光カットフィルターが設けられている請求項1~4のいずれか1項に記載の固体撮像素子。
- 前記第1近赤外光画素には前記第1の可視光以外の可視光を反射及び/又は吸収する第1カラーフィルターが、前記第2近赤外光画素には前記第2の可視光以外の可視光を反射及び/又は吸収する第2カラーフィルターが、前記第3近赤外画素には前記第3の可視光以外の可視光を反射及び/又は吸収する第3カラーフィルターがそれぞれ設けられている請求項1~5のいずれか1項に記載の固体撮像素子。
- 前記第1~第3カラーフィルターは、前記第1~第3干渉フィルターよりも下層に形成されている請求項6に記載固体撮像素子。
- 前記第1可視光画素には前記第1の可視光以外の可視光を反射及び/又は吸収する第1カラーフィルターが設けられ、
前記第2可視光画素には前記第2の可視光以外の可視光を反射及び/又は吸収する第2カラーフィルターが設けられ、
前記第3可視光画素には前記第3の可視光以外の可視光を反射及び/又は吸収する第3のカラーフィルターが設けられている
請求項1~7のいずれか1項に記載の固体撮像素子。 - 前記第1~第3可視光画素には、赤外光を反射及び/又は吸収する赤外光カットフィルターが設けられている請求項1~8のいずれか1項に記載の固体撮像素子。
- 第1の可視光及び前記第1の可視光と相関関係にある第1の近赤外光を受光する第1画素と、
前記第1の可視光とは波長が異なる第2の可視光及び前記第2の可視光と相関関係にある第2の近赤外光を受光する第2画素と、
前記第1及び第2の可視光とは波長が異なる第3の可視光及び前記第3の可視光と相関関係にある第3の近赤外光を受光する第3画素と、
を有し、
前記第1画素には、前記第1の可視光以外の可視光を反射及び/又は吸収する光学フィルターと、特定波長域の近赤外光を反射又は/吸収する光学フィルターとが積層されており、
前記第2画素には、前記第2の可視光以外の可視光を反射及び/又は吸収する光学フィルターと、特定波長域の近赤外光を反射又は/吸収する光学フィルターとが積層されており、
前記第3画素には、前記第3の可視光以外の可視光を反射及び/又は吸収する光学フィルターと、特定波長域の近赤外光を反射及び/又は吸収する光学フィルターとが積層されている
固体撮像素子。 - 前記第1画素は、赤色光以外の光を反射及び/又は吸収する赤色カラーフィルターと、750nm以上の近赤外光を反射又は/吸収する近赤外カットフィルターとを備え、
前記第2画素は、緑色光以外の光を反射及び/又は吸収する緑色カラーフィルターと、650~900nmの近赤外光を反射又は/吸収する近赤外カットフィルターとを備え、
前記第3画素は、青色光以外の光を反射及び/又は吸収する青色カラーフィルターと、550~860nm及び/又は900nm以上の近赤外光を反射又は/吸収する1又は2以上の近赤外カットフィルターとを備える
請求項10に記載の固体撮像素子。 - 前記第1画素は、第1の可視光以外の光を反射及び/又は吸収する第1カラーフィルターと、特定波長域の近赤外光を選択的に透過する第1干渉フィルターとを備え、
前記第2画素は、第2の可視光以外の光を反射及び/又は吸収する第2カラーフィルターと、特定波長域の近赤外光を選択的に透過する第2干渉フィルターとを備え、
前記第3画素は、第3の可視光以外の光を反射及び/又は吸収する第3カラーフィルターと、特定波長域の近赤外光を選択的に透過する第3干渉フィルターとを備える
請求項10又は11に記載の固体撮像素子。 - 前記第1~第3画素には反射防止膜が形成されており、前記反射防止膜上に前記第1~第3干渉フィルターが形成されている請求項12に記載の固体撮像素子。
- 前記第1~第3干渉フィルターは、前記第1~第3カラーフィルターよりも上層に形成されている請求項12に記載の固体撮像素子。
- 前記第1干渉フィルター、前記第2干渉フィルター及び前記第3干渉フィルターは、いずれも第1誘電体層と前記第1誘電体層よりも屈折率が高い第2誘電体層を、交互に5層以上積層した構成となっており、
光入射側及び光出射側に位置する第1誘電体層及び第2誘電体層の厚さは各干渉フィルターで共通し、厚さ方向中間位置の層の厚さのみ相互に異なる請求項2又は12に記載の固体撮像素子。 - 前記第1干渉フィルター、前記第2干渉フィルター及び前記第3干渉フィルターは、厚さ方向中間に位置する第2誘電体層の厚さのみ相互に異なる請求項15に記載の固体撮像素子。
- 前記第1干渉フィルターは、厚さ方向中間位置に、他の第2誘電層よりも厚膜の厚膜第2誘電体層が設けられており、
前記第2干渉フィルター及び前記第3干渉フィルターは、厚さ方向中間位置に、他の第1誘電層よりも薄膜の薄膜第1誘電体層が設けられており、前記第2干渉フィルターの薄膜第1誘電体層は、前記第3干渉フィルターの薄膜第1誘電体層よりも厚い請求項15に記載の固体撮像素子。 - 前記第1干渉フィルター、前記第2干渉フィルター及び前記第3干渉フィルターは、光入射側最外層及び/又は光出射側最外層に、前記第2誘電体層よりも屈折率が低い第3誘電体層が設けられている請求項15~17のいずれか1項に記載の固体撮像素子。
- 前記第1の可視光は赤色光であり、
前記第2の可視光は緑色光であり、
前記第3の可視光は青色光であり、
前記第1の近赤外光は前記赤色光と相関関係にある近赤外領域の光であり、
前記第2の近赤外光は前記緑色光と相関関係にある近赤外領域の光であり、
前記第3の近赤外光は前記青色光と相関関係にある近赤外領域の光である
請求項1~18のいずれか1項に記載の固体撮像素子。 - 請求項1~19のいずれか1項に記載の固体撮像素子を備える撮像装置。
- 前記固体撮像素子で取得した信号を解析し、第1~第3の可視光に基づくカラー画像及び/又は第1~第3の近赤外光に基づくカラー画像を生成する画像生成部を有する請求項20に記載の撮像装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/302,267 US10819922B2 (en) | 2017-02-21 | 2018-02-21 | Solid-state imaging element and imaging device |
DE112018000926.2T DE112018000926T5 (de) | 2017-02-21 | 2018-02-21 | Festkörperabbildungsbauelement und abbildungsvorrichtung |
JP2018533970A JP6410203B1 (ja) | 2017-02-21 | 2018-02-21 | 固体撮像素子及び撮像装置 |
KR1020187034464A KR102201627B1 (ko) | 2017-02-21 | 2018-02-21 | 고체 촬상 소자 및 촬상 장치 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-030535 | 2017-02-21 | ||
JP2017030535 | 2017-02-21 | ||
JP2017-030542 | 2017-02-21 | ||
JP2017030542 | 2017-02-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2018155486A1 true WO2018155486A1 (ja) | 2018-08-30 |
Family
ID=63254249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2018/006193 WO2018155486A1 (ja) | 2017-02-21 | 2018-02-21 | 固体撮像素子及び撮像装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10819922B2 (ja) |
JP (3) | JP6410203B1 (ja) |
KR (1) | KR102201627B1 (ja) |
DE (1) | DE112018000926T5 (ja) |
WO (1) | WO2018155486A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020031655A1 (ja) * | 2018-08-07 | 2020-02-13 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び撮像システム |
JP2020056874A (ja) * | 2018-10-01 | 2020-04-09 | キヤノン電子株式会社 | 光学フィルタ及び光学装置 |
WO2021161961A1 (ja) * | 2020-02-10 | 2021-08-19 | 株式会社ナノルクス | 光学フィルタ及びその製造方法、光センサ並びに固体撮像素子 |
JPWO2021241122A1 (ja) * | 2020-05-29 | 2021-12-02 | ||
WO2023095827A1 (ja) * | 2021-11-25 | 2023-06-01 | 三菱ケミカル株式会社 | 構造体及び固体撮像素子 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6713088B2 (ja) * | 2017-03-07 | 2020-06-24 | 富士フイルム株式会社 | フィルタ、光センサ、固体撮像素子および画像表示装置 |
KR20200054326A (ko) | 2017-10-08 | 2020-05-19 | 매직 아이 인코포레이티드 | 경도 그리드 패턴을 사용한 거리 측정 |
US10785422B2 (en) * | 2018-05-29 | 2020-09-22 | Microsoft Technology Licensing, Llc | Face recognition using depth and multi-spectral camera |
WO2019236563A1 (en) | 2018-06-06 | 2019-12-12 | Magik Eye Inc. | Distance measurement using high density projection patterns |
US11143803B2 (en) * | 2018-07-30 | 2021-10-12 | Viavi Solutions Inc. | Multispectral filter |
WO2020105360A1 (ja) * | 2018-11-19 | 2020-05-28 | パナソニックIpマネジメント株式会社 | 光センサ及び光検出システム |
EP3911920B1 (en) * | 2019-01-20 | 2024-05-29 | Magik Eye Inc. | Three-dimensional sensor including bandpass filter having multiple passbands |
KR20200095691A (ko) * | 2019-02-01 | 2020-08-11 | 삼성전자주식회사 | 밀리미터 웨이브를 이용한 객체 인식 방법 및 이를 지원하는 전자 장치 |
WO2020197813A1 (en) | 2019-03-25 | 2020-10-01 | Magik Eye Inc. | Distance measurement using high density projection patterns |
US11068701B2 (en) * | 2019-06-13 | 2021-07-20 | XMotors.ai Inc. | Apparatus and method for vehicle driver recognition and applications of same |
JP7323787B2 (ja) * | 2019-07-31 | 2023-08-09 | 日亜化学工業株式会社 | 照明装置及び赤外線カメラ付き照明装置 |
EP4065929A4 (en) | 2019-12-01 | 2023-12-06 | Magik Eye Inc. | IMPROVEMENT OF TRIANGULATION-BASED THREE-DIMENSIONAL DISTANCE MEASUREMENTS WITH TIME OF FLIGHT INFORMATION |
KR102359033B1 (ko) | 2020-02-18 | 2022-02-04 | 목포해양대학교 산학협력단 | Lng 선박 정비 연관성을 이용한 예방 정비 모델 생성 방법 및 그 시스템 |
JP2021150837A (ja) * | 2020-03-19 | 2021-09-27 | 株式会社リコー | 固体撮像素子、画像読取装置、及び画像形成装置 |
CN114287127B (zh) * | 2020-07-27 | 2023-10-31 | 华为技术有限公司 | 一种滤光阵列、移动终端以及设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011050049A (ja) * | 2009-07-30 | 2011-03-10 | National Institute Of Advanced Industrial Science & Technology | 画像撮影装置および画像撮影方法 |
WO2015159651A1 (ja) * | 2014-04-14 | 2015-10-22 | シャープ株式会社 | 光検出装置および固体撮像装置並びにそれらの製造方法 |
WO2016013520A1 (ja) * | 2014-07-25 | 2016-01-28 | 富士フイルム株式会社 | カラーフィルタ、固体撮像素子 |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2643326B2 (ja) * | 1988-07-07 | 1997-08-20 | キヤノン株式会社 | 焦点検出装置を有した一眼レフカメラ |
JP3284659B2 (ja) * | 1993-04-09 | 2002-05-20 | 株式会社フジクラ | 波長多重光通信用光スイッチング装置 |
US6380539B1 (en) * | 1997-01-30 | 2002-04-30 | Applied Science Fiction, Inc. | Four color trilinear CCD scanning |
US5924792A (en) * | 1997-02-21 | 1999-07-20 | General Electric Company | Modular dual port central lighting system |
EP0966696B1 (en) * | 1998-01-15 | 2004-05-26 | Ciena Corporation | Optical interference filter |
JP2000304918A (ja) * | 1999-02-19 | 2000-11-02 | Canon Inc | 結像光学系及びそれを用いた原稿読取装置 |
WO2000062120A1 (fr) * | 1999-04-13 | 2000-10-19 | Matsushita Electric Industrial Co., Ltd. | Afficheur a cristaux liquides |
JP2002286638A (ja) * | 2001-03-26 | 2002-10-03 | Shimadzu Corp | 同位体ガス測定装置 |
US20070182844A1 (en) * | 2003-03-09 | 2007-08-09 | Latia Imaging Pty Ltd | Optical system for producing differently focused images |
KR100970259B1 (ko) * | 2003-08-04 | 2010-07-16 | 삼성전자주식회사 | 액정표시장치 |
US7411729B2 (en) * | 2004-08-12 | 2008-08-12 | Olympus Corporation | Optical filter, method of manufacturing optical filter, optical system, and imaging apparatus |
US7456384B2 (en) * | 2004-12-10 | 2008-11-25 | Sony Corporation | Method and apparatus for acquiring physical information, method for manufacturing semiconductor device including array of plurality of unit components for detecting physical quantity distribution, light-receiving device and manufacturing method therefor, and solid-state imaging device and manufacturing method therefor |
JP4839632B2 (ja) * | 2005-02-25 | 2011-12-21 | ソニー株式会社 | 撮像装置 |
WO2007086155A1 (ja) | 2006-01-24 | 2007-08-02 | Matsushita Electric Industrial Co., Ltd. | 固体撮像装置、信号処理方法及びカメラ |
US20080173795A1 (en) * | 2007-01-23 | 2008-07-24 | Hwa-Young Kang | Image sensor |
TWI370894B (en) * | 2007-02-26 | 2012-08-21 | Corning Inc | Method for measuring distortion |
JP2008244246A (ja) | 2007-03-28 | 2008-10-09 | Matsushita Electric Ind Co Ltd | 固体撮像装置、カメラ、車両及び監視装置 |
KR100863497B1 (ko) * | 2007-06-19 | 2008-10-14 | 마루엘에스아이 주식회사 | 이미지 감지 장치, 이미지 신호 처리 방법, 광 감지 소자, 제어 방법 및 화소 어레이 |
DE102007054701A1 (de) * | 2007-11-14 | 2009-05-28 | Schott Ag | Farbfilter und Verfahren zu dessen Herstellung |
JP5793688B2 (ja) * | 2008-07-11 | 2015-10-14 | パナソニックIpマネジメント株式会社 | 固体撮像装置 |
JP2010093472A (ja) * | 2008-10-07 | 2010-04-22 | Panasonic Corp | 撮像装置および撮像装置用信号処理回路 |
JP5568923B2 (ja) * | 2009-08-25 | 2014-08-13 | 株式会社リコー | 撮像光学系およびカメラ装置および携帯情報端末装置 |
JP2011077410A (ja) | 2009-09-30 | 2011-04-14 | Toshiba Corp | 固体撮像装置 |
JP2011075984A (ja) * | 2009-10-01 | 2011-04-14 | Sony Corp | 撮像光学系及び撮像装置 |
JP5485004B2 (ja) * | 2010-04-23 | 2014-05-07 | パナソニック株式会社 | 撮像装置 |
JP5741283B2 (ja) | 2010-12-10 | 2015-07-01 | 旭硝子株式会社 | 赤外光透過フィルタ及びこれを用いた撮像装置 |
US20120202281A1 (en) * | 2011-02-07 | 2012-08-09 | Pond Biofuels Inc. | Light energy supply for photobioreactor system |
US10019112B2 (en) * | 2011-10-25 | 2018-07-10 | Semiconductor Components Industries, Llc | Touch panels with dynamic zooming and low profile bezels |
US9143704B2 (en) * | 2012-01-20 | 2015-09-22 | Htc Corporation | Image capturing device and method thereof |
JP5910485B2 (ja) * | 2012-03-16 | 2016-04-27 | 株式会社リコー | 撮像システム |
JP5942901B2 (ja) | 2012-06-14 | 2016-06-29 | ソニー株式会社 | 固体撮像素子および電子機器 |
WO2014013912A1 (ja) * | 2012-07-19 | 2014-01-23 | 株式会社ニコン | 光学素子、光学装置、計測装置、及びスクリーニング装置 |
JP6161007B2 (ja) * | 2012-09-14 | 2017-07-12 | パナソニックIpマネジメント株式会社 | 固体撮像装置及びカメラモジュール |
WO2014084167A1 (ja) * | 2012-11-30 | 2014-06-05 | 旭硝子株式会社 | 近赤外線カットフィルタ |
WO2014122714A1 (ja) * | 2013-02-07 | 2014-08-14 | パナソニック株式会社 | 撮像装置及びその駆動方法 |
EP2871843B1 (en) * | 2013-11-12 | 2019-05-29 | LG Electronics Inc. -1- | Digital device and method for processing three dimensional image thereof |
US9739916B2 (en) * | 2014-03-20 | 2017-08-22 | 3M Innovative Properties Company | Circadian rhythm optical film |
WO2015186225A1 (ja) * | 2014-06-05 | 2015-12-10 | 株式会社ニコン | 走査型投影装置、投影方法、及び手術支援システム |
US20160161332A1 (en) * | 2014-12-09 | 2016-06-09 | Stmicroelectronics (Research & Development) Limited | Image sensor using pixels with combined rgb and ir sensing |
JP6535461B2 (ja) * | 2014-12-16 | 2019-06-26 | 株式会社トプコン | 材料分析センサ及び材料分析装置 |
JP2016174028A (ja) | 2015-03-16 | 2016-09-29 | 株式会社東芝 | 固体撮像装置および多眼カメラモジュール |
JPWO2016158128A1 (ja) | 2015-03-31 | 2017-12-07 | 国立研究開発法人産業技術総合研究所 | 光検出装置および撮像装置 |
US10627646B2 (en) * | 2015-05-20 | 2020-04-21 | Canon Kabushiki Kaisha | Image pickup optical system and image pickup apparatus |
US10389922B2 (en) * | 2015-08-15 | 2019-08-20 | Nikon Corporation | Multi-wavelength detector |
US10132971B2 (en) * | 2016-03-04 | 2018-11-20 | Magna Electronics Inc. | Vehicle camera with multiple spectral filters |
US10444415B2 (en) * | 2017-02-14 | 2019-10-15 | Cista System Corp. | Multispectral sensing system and method |
-
2018
- 2018-02-21 DE DE112018000926.2T patent/DE112018000926T5/de active Pending
- 2018-02-21 KR KR1020187034464A patent/KR102201627B1/ko active IP Right Grant
- 2018-02-21 US US16/302,267 patent/US10819922B2/en active Active
- 2018-02-21 WO PCT/JP2018/006193 patent/WO2018155486A1/ja active Application Filing
- 2018-02-21 JP JP2018533970A patent/JP6410203B1/ja active Active
- 2018-07-31 JP JP2018143514A patent/JP6448842B2/ja active Active
- 2018-11-07 JP JP2018209594A patent/JP2019024262A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011050049A (ja) * | 2009-07-30 | 2011-03-10 | National Institute Of Advanced Industrial Science & Technology | 画像撮影装置および画像撮影方法 |
WO2015159651A1 (ja) * | 2014-04-14 | 2015-10-22 | シャープ株式会社 | 光検出装置および固体撮像装置並びにそれらの製造方法 |
WO2016013520A1 (ja) * | 2014-07-25 | 2016-01-28 | 富士フイルム株式会社 | カラーフィルタ、固体撮像素子 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020031655A1 (ja) * | 2018-08-07 | 2020-02-13 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び撮像システム |
JP2020056874A (ja) * | 2018-10-01 | 2020-04-09 | キヤノン電子株式会社 | 光学フィルタ及び光学装置 |
JP7271121B2 (ja) | 2018-10-01 | 2023-05-11 | キヤノン電子株式会社 | 光学フィルタ及び光学装置 |
WO2021161961A1 (ja) * | 2020-02-10 | 2021-08-19 | 株式会社ナノルクス | 光学フィルタ及びその製造方法、光センサ並びに固体撮像素子 |
JPWO2021241122A1 (ja) * | 2020-05-29 | 2021-12-02 | ||
WO2021241122A1 (ja) * | 2020-05-29 | 2021-12-02 | パナソニックIpマネジメント株式会社 | フィルタアレイおよび光検出システム |
JP7209273B2 (ja) | 2020-05-29 | 2023-01-20 | パナソニックIpマネジメント株式会社 | フィルタアレイおよび光検出システム |
WO2023095827A1 (ja) * | 2021-11-25 | 2023-06-01 | 三菱ケミカル株式会社 | 構造体及び固体撮像素子 |
Also Published As
Publication number | Publication date |
---|---|
JP6410203B1 (ja) | 2018-10-24 |
KR20190002615A (ko) | 2019-01-08 |
JP6448842B2 (ja) | 2019-01-09 |
US10819922B2 (en) | 2020-10-27 |
JPWO2018155486A1 (ja) | 2019-02-28 |
KR102201627B1 (ko) | 2021-01-12 |
US20190297278A1 (en) | 2019-09-26 |
DE112018000926T5 (de) | 2019-10-31 |
JP2019024262A (ja) | 2019-02-14 |
JP2018170801A (ja) | 2018-11-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6410203B1 (ja) | 固体撮像素子及び撮像装置 | |
JP6364667B2 (ja) | 光検出装置および固体撮像装置並びにそれらの製造方法 | |
JP4839632B2 (ja) | 撮像装置 | |
JP5296077B2 (ja) | 撮像装置 | |
US8227883B2 (en) | Solid-state imaging device and camera | |
TWI770168B (zh) | 誘發透射濾光片 | |
JP4740018B2 (ja) | 固体撮像装置、カメラおよび信号処理方法 | |
US8314872B2 (en) | Imaging device | |
US8593538B2 (en) | Solid state imaging device | |
US20140347493A1 (en) | Image-capturing device and filter | |
US8445849B2 (en) | IR sensing device | |
US20120033116A1 (en) | Solid-state image sensor and camera | |
JP5774502B2 (ja) | 固体撮像装置 | |
KR20170099657A (ko) | 이미지 센서 및 그 제조 방법 | |
JP2007220832A (ja) | 固体撮像装置及びカメラ | |
JP2012019113A (ja) | 固体撮像装置 | |
WO2016158128A1 (ja) | 光検出装置および撮像装置 | |
US8860814B2 (en) | Solid-state imaging element and imaging device | |
WO2013099151A1 (ja) | 固体撮像素子、撮像装置、および信号処理方法 | |
WO2013065226A1 (ja) | 固体撮像素子、撮像装置および信号処理方法 | |
JP2011061134A (ja) | 半導体イメージセンサ | |
KR20160029641A (ko) | 이미지 센서 및 이를 구비하는 전자장치 | |
JP2014086742A (ja) | 固体撮像素子、撮像装置、および信号処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2018533970 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20187034464 Country of ref document: KR Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 18758317 Country of ref document: EP Kind code of ref document: A1 |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 18758317 Country of ref document: EP Kind code of ref document: A1 |