WO2018145359A1 - 显示面板及其阵列基板 - Google Patents

显示面板及其阵列基板 Download PDF

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Publication number
WO2018145359A1
WO2018145359A1 PCT/CN2017/080397 CN2017080397W WO2018145359A1 WO 2018145359 A1 WO2018145359 A1 WO 2018145359A1 CN 2017080397 W CN2017080397 W CN 2017080397W WO 2018145359 A1 WO2018145359 A1 WO 2018145359A1
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WO
WIPO (PCT)
Prior art keywords
array
array substrate
metal layer
wiring
metal
Prior art date
Application number
PCT/CN2017/080397
Other languages
English (en)
French (fr)
Inventor
赵阳
Original Assignee
深圳市华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US15/520,383 priority Critical patent/US10367011B2/en
Publication of WO2018145359A1 publication Critical patent/WO2018145359A1/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings

Definitions

  • the present invention relates to the field of display technologies, and in particular to a display panel and an array substrate thereof.
  • Liquid crystal display (Liquid Crystal Display, LCD) has many advantages such as thin body, power saving, no radiation, long life, etc., and has been widely used. Such as: LCD TVs, smart phones, digital cameras, computer screens or laptop screens, etc., dominate the field of flat panel display.
  • GOA Gate On. Array
  • WOA Wire On Array
  • the invention provides a display panel and an array substrate thereof, so as to solve the problem that the WOA single-layer metal trace is adopted in the GOA design in the prior art, and the current entering the GOA circuit is easily caused to be too large, so that the span or the tip portion between the GOA circuits is easy. Injury, technical problems that lead to open circuits and short circuits.
  • a technical solution adopted by the present invention is to provide an array substrate, wherein the array substrate includes a display area and a peripheral wiring area, wherein
  • the display area includes a plurality of sub-pixel electrodes arranged in a matrix, scan lines corresponding to the sub-pixel electrodes of each row, and data lines corresponding to the sub-pixel electrodes of each column;
  • the peripheral wiring area is provided with a gate driving circuit corresponding to each of the scan lines and a data driving line corresponding to each of the data lines, and the gate driving circuit and the data driving line are electrically Connecting to the flip chip package region of the driving chip, each of the array driving circuits electrically connected to the flip chip packaging region is disposed on different metal layers, thereby improving the electrostatic protection capability of the array substrate;
  • the distance between adjacent array wirings is in the range of 10-30 ⁇ m, and the starting point of each of the array wirings connecting the gate driving circuit and the end point connecting the flip chip packaging regions are disposed in the same metal layer.
  • another technical solution adopted by the present invention is to provide an array substrate, where the array substrate includes a display area and a peripheral wiring area, where
  • the display area includes a plurality of sub-pixel electrodes arranged in a matrix, scan lines corresponding to the sub-pixel electrodes of each row, and data lines corresponding to the sub-pixel electrodes of each column;
  • the peripheral wiring area is provided with a gate driving circuit corresponding to each of the scan lines and a data driving line corresponding to each of the data lines, and the gate driving circuit and the data driving line are electrically Connected to the flip chip package region of the driving chip, each of the array driving circuits electrically connected to the flip chip package region is disposed on different metal layers, thereby improving the electrostatic protection capability of the array substrate.
  • the starting point of each of the array wirings connecting the gate driving circuit and the end point connecting the flip chip packaging regions are disposed in the same metal layer.
  • the different metal layers comprise a first metal layer and a second metal layer, and the array wirings of the first metal layer and the second metal layer each have a length greater than 100 ⁇ m.
  • the array wirings of the first metal layer and the second metal layer are electrically connected through via holes of the gate insulating layer.
  • the diameter of the through hole is equal to the width of the array wiring.
  • the array wiring has a width ranging from 10 to 30 ⁇ m.
  • the first metal layer includes a plurality of first metal segments
  • the second metal layer includes a plurality of second metal segments
  • the plurality of first metal segments and the corresponding plurality of The second metal segment is electrically connected.
  • the array wiring is further divided into a first array wiring area and a second array wiring area, and the plurality of the first metal segments and the second array wiring region of the first array wiring region A plurality of the first metal segments are spaced apart from each other in the same layer.
  • the distance between adjacent array wirings ranges from 10 to 30 [mu]m.
  • another technical solution adopted by the present invention is to provide a display panel including a casing and the array substrate described above, wherein the array substrate includes a display area and a peripheral wiring area. ,among them,
  • the display area includes a plurality of sub-pixel electrodes arranged in a matrix, scan lines corresponding to the sub-pixel electrodes of each row, and data lines corresponding to the sub-pixel electrodes of each column;
  • the peripheral wiring area is provided with a gate driving circuit corresponding to each of the scan lines and a data driving line corresponding to each of the data lines, and the gate driving circuit and the data driving line are electrically Connected to the flip chip package region of the driving chip, each of the array driving circuits electrically connected to the flip chip package region is disposed on different metal layers, thereby improving the electrostatic protection capability of the array substrate.
  • the starting point of each of the array wirings connecting the gate driving circuit and the end point connecting the flip chip packaging regions are disposed in the same metal layer.
  • the different metal layers comprise a first metal layer and a second metal layer, and the array wirings of the first metal layer and the second metal layer each have a length greater than 100 ⁇ m.
  • the array wirings of the first metal layer and the second metal layer are electrically connected through via holes of the gate insulating layer.
  • the diameter of the through hole is equal to the width of the array wiring.
  • the array wiring has a width ranging from 10 to 30 ⁇ m.
  • the first metal layer includes a plurality of first metal segments
  • the second metal layer includes a plurality of second metal segments
  • the plurality of first metal segments and the corresponding plurality of The second metal segment is electrically connected.
  • the array wiring is further divided into a first array wiring area and a second array wiring area, and the plurality of the first metal segments and the second array wiring region of the first array wiring region A plurality of the first metal segments are spaced apart from each other in the same layer.
  • the distance between adjacent array wirings ranges from 10 to 30 [mu]m.
  • the array substrate provided by the present invention has an array wiring disposed on different metal layers, which lengthens the length of the array wiring, improves the impedance of the array wiring, and reduces input.
  • the current of the gate driving circuit reduces the probability of the gate driving circuit being damaged, thereby improving the electrostatic protection capability of the array substrate.
  • FIG. 1 is a schematic structural view of a first embodiment of an array substrate provided by the present invention.
  • FIG. 2 is a cross-sectional structural view showing an array wiring of different metal layers in the first embodiment of the present invention
  • FIG. 3 is a schematic structural view of a second embodiment of an array substrate provided by the present invention.
  • FIG. 4 is a schematic structural view of a third embodiment of an array substrate provided by the present invention.
  • FIG. 5 is a cross-sectional structural view showing an array wiring of different metal layers in a third embodiment of the present invention.
  • FIG. 6 is a schematic structural view of an embodiment of a display panel provided by the present invention.
  • FIG. 1 is a schematic structural view of a first embodiment of an array substrate provided by the present invention
  • FIG. 2 is a schematic cross-sectional structural view of an array wiring of different metal layers in the first embodiment of the present invention.
  • the array substrate 100 array substrate includes a display area 101 and a peripheral wiring area 102, and the peripheral wiring area 102 is disposed at or around the display area 101.
  • the peripheral wiring area 102 is disposed in the display area. The left and upper sides of 101.
  • the display area 101 includes a plurality of sub-pixel electrodes 110 arranged in a matrix, scan lines 130 corresponding to each row of sub-pixel electrodes 110, and data lines 150 corresponding to each column of sub-pixel electrodes 110.
  • the peripheral wiring area 102 is provided with a gate driving circuit 120 corresponding to each row of scanning lines 130 and a data driving line 140 corresponding to each column of data lines 150.
  • the gate driving circuit 120 and the data driving line 140 are electrically connected to the driving.
  • the flip chip package region 160 of the chip, the array wiring 170 electrically connected to the flip chip package region 160 of each gate driving circuit 120 is disposed on a different metal layer 180 (see FIG. 2).
  • a dotted line It does not belong to the same metal layer as the solid line, thereby improving the electrostatic protection capability of the array substrate 100.
  • the array substrate 100 provided by the present invention is provided with the array wiring 170 disposed on the different metal layers 180, the length of the array wiring 170 is extended, the impedance of the array wiring 170 is increased, and the current input to the gate driving circuit 120 is reduced, and the gate is reduced. The probability of the pole drive circuit 120 being damaged increases the electrostatic protection capability of the array substrate 100.
  • the different metal layers 180 include a first metal layer 181, a second metal layer 182, and an isolated first metal layer 181 and
  • the insulating layer 183 of the second metal layer 182 is an insulating layer containing at least one insulating material, that is, a plurality of insulating layers or an insulating layer.
  • the material of the insulating layer may be epoxy resin.
  • the array wiring 170 includes a start point 171 and an end point 173, and further includes a first array wiring 172 of the first metal layer 181 and a second array wiring 174 of the second metal layer 182.
  • the starting point 171 of each of the array wirings 170 connected to the gate driving circuit 120 and the end point 173 connecting the flip-chip packaging regions 160 are disposed on the same metal layer, and may be the first metal layer 181 or the second metal layer 182.
  • the length of the first array wiring 172 of the first metal layer 181 and the second array wiring 172 of the second metal layer 182 are all greater than 100 ⁇ m, and the optional length is 200 ⁇ m, 300 ⁇ m, or 350 ⁇ m, etc., which may be based on practical applications.
  • the specific array substrate size is adjusted.
  • the insulating layer 183 that isolates the first metal layer 181 and the second metal layer 182 is a gate insulating layer, and the gate insulating layer 183 is provided with a via hole, and the first array of the first metal layer 181
  • the wiring 172 and the second array wiring 174 of the second metal layer 182 are electrically connected through the via holes 184 of the gate insulating layer 183.
  • the diameter of the via 184 may be greater than, less than, or equal to the width of the array wiring 170. Alternatively, the diameter of the via 184 is equal to the width of the array wiring 170.
  • the width of the array wiring 170 ranges from 10 to 30 ⁇ m; further, the width of the array wiring 170 ranges from 15 to 25 ⁇ m; alternatively, the width of the array wiring 170 is 20 ⁇ m.
  • the distance between adjacent array wirings 170 ranges from 10 to 30 ⁇ m; further, the distance between adjacent array wirings 170 ranges from 15 to 25 ⁇ m; alternatively, the distance between adjacent array wirings 170 is 20 ⁇ m.
  • the plurality of first array wires 172 and the plurality of second array wires 174 are disposed at the corners of the array wires 170, and the array wires 170 of different metal layers may also be used at other straight lines, specifically
  • the array wiring between the starting point 171 and the ending point 173 can be set in different metal layers, and a multi-segment design can also be performed. For details, refer to the following, and details are not described herein again.
  • FIG. 3 is a schematic structural diagram of a second embodiment of an array substrate provided by the present invention.
  • FIG. 3 for convenience of understanding, a cross-sectional view of a different metal layer array wiring is taken as an example.
  • the structure of the present embodiment is substantially the same as that of the first embodiment, and the array wiring 270 is further divided into a first array wiring area. 203 and the second array wiring region 204, wherein the plurality of first array wirings 272 of the first array wiring region 203 and the plurality of first array wirings 272 of the second array wiring region 204 are spaced apart from each other in the same layer;
  • the plurality of second array wirings 274 of one array wiring region 203 are spaced apart from the plurality of second array wirings 274 of the second array wiring region 204 at the same layer.
  • FIG. 4 is a schematic structural view of a second embodiment of the array substrate provided by the present invention
  • FIG. 5 is a schematic cross-sectional structural view of the array wiring of different metal layers in the third embodiment of the present invention.
  • the cross-sectional views of the different metal layer array wirings are taken as an example.
  • the structure of the present embodiment is basically the same as that of the first embodiment, except that the first metal layer 381 includes a plurality of a first metal segment 3701, a first metal segment 3702, that is, a first array wiring 372; the second metal layer 382 includes a plurality of second metal segments 3703, a second metal segment 3704, that is, a second array wiring 374;
  • the metal segments are electrically connected to the corresponding plurality of second metal segments.
  • the lengths of the first metal segment 3701 and the first metal segment 3702 may be equal or unequal, and the lengths are all greater than 100 ⁇ m; for the same reason, the lengths of the second metal segment 3703 and the second metal segment 3704 may be equal or unequal, and The length is greater than 100 ⁇ m.
  • the first metal layer 381 includes two first metal segments, and in other embodiments, three, four, or more, which are not described herein.
  • the plurality of first metal segments 3701 and the first metal segments 3702 of the first array wiring region 303 are disposed in the same layer, and the plurality of second metal segments 3703 and the second metal segments 3704 are disposed on another layer. (indicated by a broken line), wherein the plurality of first metal segments 3701 and the first metal segments 3702 of the second array wiring region 304 are spaced apart from the plurality of first metal segments 3701 and the first metal segments 3702 of the first array wiring region 304.
  • the array substrate of the present embodiment further extends the length of the array wiring by providing a plurality of first metal segments 3701 and a plurality of second metal segments 3703 disposed on different metal layers, thereby further improving the electrostatic protection capability of the array substrate.
  • FIG. 6 is a schematic structural diagram of an embodiment of a display panel provided by the present invention.
  • the display panel 10 includes a housing 11 and the array substrate described above, and the array substrate is disposed inside the housing 11.
  • the array substrate is the array substrate 100, the array substrate 200, or the array substrate 300 described above.
  • the structure of the array substrate 100, the array substrate 200, or the array substrate 300 is as described above, and details are not described herein again.
  • the array substrate provided by the present invention has an array wiring disposed on different metal layers, which extends the length of the array wiring and improves the impedance of the array wiring, thereby reducing input gate driving.
  • the current of the circuit reduces the chance of the gate drive circuit being damaged, thereby improving the electrostatic protection capability of the array substrate.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示面板（10）及其阵列基板（100，200，300），该阵列基板（100，200，300）包括显示区（101）和外围布线区（102），其中，外围布线区（102）设置有与显示区（101）的扫描线（130）对应设置的栅极驱动电路（120）和与显示区（101）的数据线（150）对应设置的数据驱动线（140），栅极驱动电路（120）电连接至驱动芯片的覆晶薄膜封装区（160）的阵列布线（170）设置在不同金属层（180），从而提高阵列基板（100，200，300）的静电防护能力。阵列基板（100，200，300）由于设有设置在不同金属层（180）的阵列布线（170），阵列布线（170）长度延长，阻抗提高，减少输入电流，减少电路炸伤的几率，提高静电防护能力。

Description

显示面板及其阵列基板
【技术领域】
本发明涉及显示技术领域，具体是指一种显示面板及其阵列基板。
【背景技术】
液晶显示器（Liquid Crystal Display，LCD）具有机身薄、省电、无辐射、寿命长等众多优点，得到了广泛的应用。如：液晶电视、智能手机、数字相机、计算机屏幕或笔记本电脑屏幕等等，在平板显示领域中占主导地位。
通常的液晶屏，栅极电路驱动芯片（Gate Driver）设置在玻璃基板的外部，为了简化显示面板的设计，栅极电路驱动芯片放在玻璃基板内部，称为Gate On Array（简称GOA）设计。一般情况下，GOA设计中，通过阵列布线（Wire On Array，简称WOA）将左右侧的GOA与上侧或者下侧的驱动芯片电连接，通常采用单层金属走线，单层金属走线对于高度致密与复杂的GOA电路来说，容易导致进入GOA电路的电流过大，使GOA电路之间的跨线或者尖端部容易炸伤，从而导致断路和短路。
【发明内容】
本发明提供一种显示面板及其阵列基板，以解决现有技术中GOA设计采用WOA单层金属走线，容易导致进入GOA电路的电流过大，使GOA电路之间的跨线或者尖端部容易炸伤，导致断路和短路的技术问题。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种阵列基板，其中，所述阵列基板包括显示区和外围布线区，其中，
所述显示区包括多个以矩阵方式排列的子像素电极、与每一行所述子像素电极对应设置的扫描线以及与每一列所述子像素电极对应设置的数据线；
所述外围布线区设置有与每一行所述扫描线对应设置的栅极驱动电路和与每一列所述数据线对应设置的数据驱动线，所述栅极驱动电路和所述数据驱动线均电连接至驱动芯片的覆晶薄膜封装区，每一条所述栅极驱动电路电连接至所述覆晶薄膜封装区的阵列布线设置在不同金属层，从而提高所述阵列基板的静电防护能力；
其中，相邻所述阵列布线的距离范围为10-30μm，每一条所述阵列布线连接所述栅极驱动电路的起点和连接所述覆晶薄膜封装区的终点设置在同一金属层。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种阵列基板，所述阵列基板包括显示区和外围布线区，其中，
所述显示区包括多个以矩阵方式排列的子像素电极、与每一行所述子像素电极对应设置的扫描线以及与每一列所述子像素电极对应设置的数据线；
所述外围布线区设置有与每一行所述扫描线对应设置的栅极驱动电路和与每一列所述数据线对应设置的数据驱动线，所述栅极驱动电路和所述数据驱动线均电连接至驱动芯片的覆晶薄膜封装区，每一条所述栅极驱动电路电连接至所述覆晶薄膜封装区的阵列布线设置在不同金属层，从而提高所述阵列基板的静电防护能力。
根据本发明一实施例，每一条所述阵列布线连接所述栅极驱动电路的起点和连接所述覆晶薄膜封装区的终点设置在同一金属层。
根据本发明一实施例，所述不同金属层包括第一金属层和第二金属层，所述第一金属层和所述第二金属层的阵列布线的长度范围均大于100μm。
根据本发明一实施例，所述第一金属层和所述第二金属层的阵列布线通过栅极绝缘层的通孔电连接。
根据本发明一实施例，所述通孔的直径等于所述阵列布线的宽度。
根据本发明一实施例，所述阵列布线的宽度范围为10-30μm。
根据本发明一实施例，所述第一金属层包括多个第一金属段，所述第二金属层包括多个第二金属段，所述多个第一金属段与对应的所述多个第二金属段电连接。
根据本发明一实施例，所述阵列布线进一步划分为第一阵列布线区和第二阵列布线区，所述第一阵列布线区的多个所述第一金属段与所述第二阵列布线区的多个所述第一金属段间隔设置在同一层。
根据本发明一实施例，相邻所述阵列布线的距离范围为10-30μm。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种显示面板，所述显示面板包括壳体和上述所述的阵列基板，其中，所述阵列基板包括显示区和外围布线区，其中，
所述显示区包括多个以矩阵方式排列的子像素电极、与每一行所述子像素电极对应设置的扫描线以及与每一列所述子像素电极对应设置的数据线；
所述外围布线区设置有与每一行所述扫描线对应设置的栅极驱动电路和与每一列所述数据线对应设置的数据驱动线，所述栅极驱动电路和所述数据驱动线均电连接至驱动芯片的覆晶薄膜封装区，每一条所述栅极驱动电路电连接至所述覆晶薄膜封装区的阵列布线设置在不同金属层，从而提高所述阵列基板的静电防护能力。
根据本发明一实施例，每一条所述阵列布线连接所述栅极驱动电路的起点和连接所述覆晶薄膜封装区的终点设置在同一金属层。
根据本发明一实施例，所述不同金属层包括第一金属层和第二金属层，所述第一金属层和所述第二金属层的阵列布线的长度范围均大于100μm。
根据本发明一实施例，所述第一金属层和所述第二金属层的阵列布线通过栅极绝缘层的通孔电连接。
根据本发明一实施例，所述通孔的直径等于所述阵列布线的宽度。
根据本发明一实施例，所述阵列布线的宽度范围为10-30μm。
根据本发明一实施例，所述第一金属层包括多个第一金属段，所述第二金属层包括多个第二金属段，所述多个第一金属段与对应的所述多个第二金属段电连接。
根据本发明一实施例，所述阵列布线进一步划分为第一阵列布线区和第二阵列布线区，所述第一阵列布线区的多个所述第一金属段与所述第二阵列布线区的多个所述第一金属段间隔设置在同一层。
根据本发明一实施例，相邻所述阵列布线的距离范围为10-30μm。
本发明的有益效果是：区别于现有技术的情况，本发明提供的阵列基板由于设有设置在不同金属层的阵列布线，延长了阵列布线的长度，提高阵列布线的的阻抗，从而减少输入栅极驱动电路的电流，减少栅极驱动电路炸伤的几率，从而提高阵列基板的静电防护能力。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图，其中：
图1是本发明提供的阵列基板第一实施例的结构示意图；
图2是本发明第一实施例中不同金属层的阵列布线的剖面结构示意图；
图3是本发明提供的阵列基板第二实施例的结构示意图；
图4是本发明提供的阵列基板第三实施例的结构示意图；
图5是本发明第三实施例中不同金属层的阵列布线的剖面结构示意图；
图6是本发明提供的显示面板一实施例的结构示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请一并参阅图1和图2，图1是本发明提供的阵列基板第一实施例的结构示意图，图2是本发明第一实施例中不同金属层的阵列布线的剖面结构示意图。
如图1所示，该阵列基板100阵列基板包括显示区101和外围布线区102，外围布线区102设置在显示区101的周边或者四周，在本发明示例中，外围布线区102设置在显示区101的左侧和上侧。
其中，显示区101包括多个以矩阵方式排列的子像素电极110、与每一行子像素电极110对应设置的扫描线130以及与每一列子像素电极110对应设置的数据线150。
外围布线区102设置有与每一行扫描线130对应设置的栅极驱动电路120和与每一列数据线150对应设置的数据驱动线140，栅极驱动电路120和数据驱动线140均电连接至驱动芯片的覆晶薄膜封装区160，每一条栅极驱动电路120电连接至覆晶薄膜封装区160的阵列布线170设置在不同金属层180（见图2），在本实施例的示例中，虚线与实线不属于同一金属层，从而提高阵列基板100的静电防护能力。
本发明提供的阵列基板100由于设有设置在不同金属层180的阵列布线170，延长了阵列布线170的长度，提高阵列布线170的的阻抗，从而减少输入栅极驱动电路120的电流，减少栅极驱动电路120炸伤的几率，从而提高阵列基板100的静电防护能力。
请一并参见图2，为了方便理解，以不同金属层阵列布线的剖面图为示例进行说明，不同金属层180包括第一金属层181、第二金属层182以及隔绝第一金属层181和第二金属层182的绝缘层183，绝缘层183是至少一层含有绝缘材料的绝缘层，即可以是多层绝缘层，也可以是一层绝缘层。绝缘层的材料可选为环氧树脂。
阵列布线170包括起点171和终点173，还包括第一金属层181的第一阵列布线172和第二金属层182的第二阵列布线174。其中，每一条阵列布线170连接栅极驱动电路120的起点171和连接覆晶薄膜封装区160的终点173设置在同一金属层，可以是第一金属层181，也可以是第二金属层182。且第一金属层181的第一阵列布线172和第二金属层182的第二阵列布线172的长度范围均大于100μm，可选的长度为200μm、300μm或者350μm等等，实际应用例中可以依据具体的阵列基板尺寸进行调整。
在本实施例的示例中，隔绝第一金属层181和第二金属层182的绝缘层183为栅极绝缘层，栅极绝缘层183上设有通孔，第一金属层181的第一阵列布线172和第二金属层182的第二阵列布线174通过栅极绝缘层183的通孔184电连接。通孔184的直径可以大于、小于或者等于阵列布线170的宽度，可选的，通孔184的直径等于阵列布线170的宽度。其中，阵列布线170的宽度范围为10-30μm；进一步的，阵列布线170的宽度范围为15-25μm；可选的，阵列布线170的宽度为20μm。且相邻阵列布线170的距离范围为10-30μm；进一步的，相邻阵列布线170的距离范围为15-25μm；可选的，相邻阵列布线170的距离为20μm。
本实施例的示例中，多个第一阵列布线172和多个第二阵列布线174设置在阵列布线170的弯角处，在其他直线处也均可采用不同金属层的阵列布线170，具体的，在起点171和终点173之间的阵列布线均可以设置在不同金属层，且还可以进行多段设计，详细内容参见下文，此处不再赘述。
请参阅图3，图3本发明提供的阵列基板第二实施例的结构示意图。
如图3所示，为了方便理解，以不同金属层阵列布线的剖面图为示例进行说明，本实施例的结构与第一实施例的结构基本相同，阵列布线270进一步划分为第一阵列布线区203和第二阵列布线区204，其中，第一阵列布线区203的多个第一阵列布线272与第二阵列布线区204的多个第一阵列布线272间隔设置在同一层；同理，第一阵列布线区203的多个第二阵列布线274与第二阵列布线区204的多个第二阵列布线274间隔设置在同一层。
请一并参阅图4和图5，图4本发明提供的阵列基板第二实施例的结构示意图，图5是本发明第三实施例中不同金属层的阵列布线的剖面结构示意图。
如图5所示，为了方便理解，以不同金属层阵列布线的剖面图为示例进行说明，本实施例的结构与第一实施例的结构基本相同，不同的是第一金属层381包括多个第一金属段3701、第一金属段3702，即第一阵列布线372；第二金属层382包括多个第二金属段3703、第二金属段3704，即第二阵列布线374；多个第一金属段与对应的多个第二金属段电连接。其中，第一金属段3701和第一金属段3702的长度可以相等或者不相等，且长度均大于100μm；同理，第二金属段3703和第二金属段3704的长度可以相等或者不相等，且长度均大于100μm。在本实施例的示例中，第一金属层381包括两个第一金属段，在其他实施例中，可以三个、四个，或者更多，在此不一一赘述。
请一并参阅图4，第一阵列布线区303的多个第一金属段3701、第一金属段3702设置在同一层，多个第二金属段3703、第二金属段3704设置在另一层（虚线表示），其中，第二阵列布线区304的多个第一金属段3701、第一金属段3702与第一阵列布线区304的多个第一金属段3701、第一金属段3702间隔设置在同一层。本实施例的阵列基板由于设有设置在不同金属层的多个第一金属段3701和多个第二金属段3703，进一步延长了阵列布线的长度，从而进一步提高阵列基板的静电防护能力。
请参阅图6，图6是本发明提供的显示面板一实施例的结构示意图。
如图6所示，该显示面板10包括壳体11和上述的阵列基板，阵列基板设置在壳体11的内部。其中，阵列基板为上述的阵列基板100、阵列基板200或者阵列基板300。
其中，阵列基板100、阵列基板200或者阵列基板300的结构参见上文，此处不再赘述。
综上所述，本领域技术人员容易理解，本发明提供的阵列基板由于设有设置在不同金属层的阵列布线，延长了阵列布线的长度，提高阵列布线的的阻抗，从而减少输入栅极驱动电路的电流，减少栅极驱动电路炸伤的几率，从而提高阵列基板的静电防护能力。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (19)

  1. 一种阵列基板，其中，所述阵列基板包括显示区和外围布线区，其中，
    所述显示区包括多个以矩阵方式排列的子像素电极、与每一行所述子像素电极对应设置的扫描线以及与每一列所述子像素电极对应设置的数据线；
    所述外围布线区设置有与每一行所述扫描线对应设置的栅极驱动电路和与每一列所述数据线对应设置的数据驱动线，所述栅极驱动电路和所述数据驱动线均电连接至驱动芯片的覆晶薄膜封装区，每一条所述栅极驱动电路电连接至所述覆晶薄膜封装区的阵列布线设置在不同金属层，从而提高所述阵列基板的静电防护能力；
    其中，相邻所述阵列布线的距离范围为10-30μm，每一条所述阵列布线连接所述栅极驱动电路的起点和连接所述覆晶薄膜封装区的终点设置在同一金属层。
  2. 一种阵列基板，其中，所述阵列基板包括显示区和外围布线区，其中，
    所述显示区包括多个以矩阵方式排列的子像素电极、与每一行所述子像素电极对应设置的扫描线以及与每一列所述子像素电极对应设置的数据线；
    所述外围布线区设置有与每一行所述扫描线对应设置的栅极驱动电路和与每一列所述数据线对应设置的数据驱动线，所述栅极驱动电路和所述数据驱动线均电连接至驱动芯片的覆晶薄膜封装区，每一条所述栅极驱动电路电连接至所述覆晶薄膜封装区的阵列布线设置在不同金属层，从而提高所述阵列基板的静电防护能力。
  3. 根据权利要求2所述的阵列基板，其中，每一条所述阵列布线连接所述栅极驱动电路的起点和连接所述覆晶薄膜封装区的终点设置在同一金属层。
  4. 根据权利要求3所述的阵列基板，其中，所述不同金属层包括第一金属层和第二金属层，所述第一金属层和所述第二金属层的阵列布线的长度范围均大于100μm。
  5. 根据权利要求4所述的阵列基板，其中，所述第一金属层和所述第二金属层的阵列布线通过栅极绝缘层的通孔电连接。
  6. 根据权利要求5所述的阵列基板，其中，所述通孔的直径等于所述阵列布线的宽度。
  7. 根据权利要求6所述的阵列基板，其中，所述阵列布线的宽度范围为10-30μm。
  8. 根据权利要求4所述的阵列基板，其中，所述第一金属层包括多个第一金属段，所述第二金属层包括多个第二金属段，所述多个第一金属段与对应的所述多个第二金属段电连接。
  9. 根据权利要求8所述的阵列基板，其中，所述阵列布线进一步划分为第一阵列布线区和第二阵列布线区，所述第一阵列布线区的多个所述第一金属段与所述第二阵列布线区的多个所述第一金属段间隔设置在同一层。
  10. 根据权利要求2所述的阵列基板，其中，相邻所述阵列布线的距离范围为10-30μm。
  11. 一种显示面板，其中，所述显示面板包括壳体和权利求1所述的阵列基板，其中，所述阵列基板包括显示区和外围布线区，其中，
    所述显示区包括多个以矩阵方式排列的子像素电极、与每一行所述子像素电极对应设置的扫描线以及与每一列所述子像素电极对应设置的数据线；
    所述外围布线区设置有与每一行所述扫描线对应设置的栅极驱动电路和与每一列所述数据线对应设置的数据驱动线，所述栅极驱动电路和所述数据驱动线均电连接至驱动芯片的覆晶薄膜封装区，每一条所述栅极驱动电路电连接至所述覆晶薄膜封装区的阵列布线设置在不同金属层，从而提高所述阵列基板的静电防护能力。
  12. 根据权利要求11所述的显示面板，其中，每一条所述阵列布线连接所述栅极驱动电路的起点和连接所述覆晶薄膜封装区的终点设置在同一金属层。
  13. 根据权利要求12所述的显示面板，其中，所述不同金属层包括第一金属层和第二金属层，所述第一金属层和所述第二金属层的阵列布线的长度范围均大于100μm。
  14. 根据权利要求13所述的显示面板，其中，所述第一金属层和所述第二金属层的阵列布线通过栅极绝缘层的通孔电连接。
  15. 根据权利要求14所述的阵列基板，其中，所述通孔的直径等于所述阵列布线的宽度。
  16. 根据权利要求15所述的阵列基板，其中，所述阵列布线的宽度范围为10-30μm。
  17. 根据权利要求13所述的阵列基板，其中，所述第一金属层包括多个第一金属段，所述第二金属层包括多个第二金属段，所述多个第一金属段与对应的所述多个第二金属段电连接。
  18. 根据权利要求17所述的阵列基板，其中，所述阵列布线进一步划分为第一阵列布线区和第二阵列布线区，所述第一阵列布线区的多个所述第一金属段与所述第二阵列布线区的多个所述第一金属段间隔设置在同一层。
  19. 根据权利要求11所述的阵列基板，其中，相邻所述阵列布线的距离范围为10-30μm。
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CN114185213B (zh) * 2021-12-30 2023-11-24 滁州惠科光电科技有限公司 阵列基板、显示面板及显示装置

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