WO2018094596A1 - 阵列基板及其制造方法 - Google Patents
阵列基板及其制造方法 Download PDFInfo
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- WO2018094596A1 WO2018094596A1 PCT/CN2016/106887 CN2016106887W WO2018094596A1 WO 2018094596 A1 WO2018094596 A1 WO 2018094596A1 CN 2016106887 W CN2016106887 W CN 2016106887W WO 2018094596 A1 WO2018094596 A1 WO 2018094596A1
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- 239000000758 substrate Substances 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 83
- 239000002184 metal Substances 0.000 claims abstract description 83
- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 23
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 11
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 11
- 238000000059 patterning Methods 0.000 claims abstract description 8
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 239000002738 chelating agent Substances 0.000 claims description 3
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
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- 230000015572 biosynthetic process Effects 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910020923 Sn-O Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
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- 229910052758 niobium Inorganic materials 0.000 description 2
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- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
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Abstract
Description
Claims (14)
- 一种阵列基板的制造方法,其特征在于,所述方法包括:在基板上依次形成栅极、栅极绝缘层、导体缓冲层和金属层;对所述金属层及所述导体缓冲层进行图案化处理,以在所述金属层上形成源极、漏极及介于二者之间的沟道,所述导体缓冲层部分露出于所述沟道;对露出所述沟道部分的导体缓冲层进行半导体化处理,以在沟道内形成半导体区域。
- 如权利要求1所述的阵列基板的制造方法,其特征在于,所述对所述金属层及所述导体缓冲层进行图案化处理,以在所述金属层上形成源极、漏极及介于二者之间的沟道,所述导体缓冲层部分露出于所述沟道步骤中包括:在所述金属层上涂覆光刻胶;提供一多灰阶掩膜版,利用所述多灰阶掩膜版对所述光刻胶进行图案化,以在所述光刻胶上形成半曝光区域;以所述光刻胶为遮蔽层,对所述金属层及导体缓冲层进行蚀刻,使得蚀刻后的金属层及导体缓冲层具有源极和漏极图案;将所述光刻胶的所述半曝光区域转化为全曝光区域;蚀刻所述蚀刻后的金属层之露出于所述全曝光区域的部分,以形成沟道并露出所述导体缓冲层。
- 如权利要求2所述的阵列基板的制造方法,其特征在于,所述对所述导体缓冲层进行半导体化处理,以在所述导体缓冲层之露出于所述沟道部分形成半导体区域步骤中包括:以所述光刻胶为遮蔽层,对所述导体缓冲层之露出于所述沟道部分进行等离子处理或高温氧化气氛处理,以使得所述导体缓冲层之露出于所述沟道部分形成所述半导体区域。
- 如权利要求2所述的阵列基板的制造方法,其特征在于,所述方法还 包括在所述半导体区域形成后,通过灰化处理或剥离法去除所述光刻胶。
- 如权利要求2所述的阵列基板的制造方法,其特征在于,所述将所述光刻胶的所述半曝光区域转化为全曝光区域步骤中,包括对所述光刻胶进行灰化处理,使得所述半曝光区域转化为所述全曝光区域。
- 如权利要求2所述的阵列基板的制造方法,其特征在于,所述以所述光刻胶为遮蔽层,对所述金属层及导体缓冲层进行蚀刻,使得蚀刻后的金属层及导体缓冲层具有源极和漏极图案步骤中,包括采用蚀刻液对所述金属层及导体缓冲层进行蚀刻。
- 如权利要求6所述的阵列基板的制造方法,其特征在于,所述蚀刻液可以选用H2O2、金属螯合剂或有机酸。
- 如权利要求2所述的阵列基板的制造方法,其特征在于,所述多灰阶掩膜版为半色调掩膜版或灰色调掩膜版。
- 如权利要求1所述的阵列基板的制造方法,其特征在于,所述在基板上依次形成栅极、栅极绝缘层、导体缓冲层和金属层步骤中,包括在栅绝缘层上通过溅射或热蒸发的方法沉积导体缓冲层。
- 如权利要求1所述的阵列基板的制造方法,其特征在于,所述在基板上依次形成栅极、栅极绝缘层、导体缓冲层和金属层步骤中,包括通过PECVD方法沉积所述栅极绝缘层。
- 一种阵列基板,其特征在于,包括依次层叠设置于基板的栅极、栅极绝缘层、导体缓冲层和金属层,其中,所述导体缓冲层包括半导体区域和导体区域,所述金属层包括源极和漏极,所述源极和漏极之间设有沟道,所述源极及所述漏极正对所述导体区域,所述半导体区域露出于所述沟道。
- 如权利要求11所述的阵列基板,其特征在于,所述导体缓冲层材料为金属氧化物。
- 如权利要求12所述的阵列基板,其特征在于,所述金属氧化物为 IGZO。
- 如权利要求11所述的阵列基板,其特征在于,所述金属层采用铜或铜合金材料制成。
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PCT/CN2016/106887 WO2018094596A1 (zh) | 2016-11-23 | 2016-11-23 | 阵列基板及其制造方法 |
KR1020197015549A KR20190065458A (ko) | 2016-11-23 | 2016-11-23 | 어레이 기판 및 어레이 기판의 제조방법 |
CN201680036580.7A CN107820640A (zh) | 2016-11-23 | 2016-11-23 | 阵列基板及其制造方法 |
EP16922321.1A EP3547351A1 (en) | 2016-11-23 | 2016-11-23 | Array substrate and manufacturing method therefor |
US16/349,490 US20200194572A1 (en) | 2016-11-23 | 2016-11-23 | ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING ARRAY SUBSTRATE (As Amended) |
JP2019526296A JP2019536284A (ja) | 2016-11-23 | 2016-11-23 | アレイ基板及びアレイ基板の製造方法 |
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EP (1) | EP3547351A1 (zh) |
JP (1) | JP2019536284A (zh) |
KR (1) | KR20190065458A (zh) |
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CN109712993A (zh) * | 2019-01-02 | 2019-05-03 | 南京中电熊猫平板显示科技有限公司 | 阵列基板及制造方法及显示装置 |
CN111584521B (zh) * | 2020-05-25 | 2023-10-03 | 成都京东方显示科技有限公司 | 阵列基板及其制作方法、显示面板 |
CN111584520B (zh) * | 2020-05-25 | 2023-09-12 | 成都京东方显示科技有限公司 | 阵列基板、显示面板以及阵列基板的制作方法 |
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US20140084282A1 (en) * | 2011-12-31 | 2014-03-27 | Boe Technology Group Co., Ltd. | Thin film transistor, array substrate and display device |
CN104025269A (zh) * | 2012-11-12 | 2014-09-03 | 深圳市柔宇科技有限公司 | 一种自对准金属氧化物薄膜晶体管器件及制造方法 |
CN104247031A (zh) * | 2012-04-23 | 2014-12-24 | 夏普株式会社 | 半导体装置及其制造方法 |
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JPWO2008136505A1 (ja) * | 2007-05-08 | 2010-07-29 | 出光興産株式会社 | 半導体デバイス及び薄膜トランジスタ、並びに、それらの製造方法 |
TWI711182B (zh) * | 2008-07-31 | 2020-11-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
JP5587591B2 (ja) * | 2008-11-07 | 2014-09-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI489628B (zh) * | 2009-04-02 | 2015-06-21 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
CN102157565A (zh) * | 2011-01-18 | 2011-08-17 | 北京大学深圳研究生院 | 一种薄膜晶体管的制作方法 |
JP6436660B2 (ja) * | 2014-07-07 | 2018-12-12 | 三菱電機株式会社 | 薄膜トランジスタ基板およびその製造方法 |
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- 2016-11-23 CN CN201680036580.7A patent/CN107820640A/zh active Pending
- 2016-11-23 EP EP16922321.1A patent/EP3547351A1/en not_active Withdrawn
- 2016-11-23 KR KR1020197015549A patent/KR20190065458A/ko not_active Application Discontinuation
- 2016-11-23 JP JP2019526296A patent/JP2019536284A/ja active Pending
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US20140084282A1 (en) * | 2011-12-31 | 2014-03-27 | Boe Technology Group Co., Ltd. | Thin film transistor, array substrate and display device |
CN104247031A (zh) * | 2012-04-23 | 2014-12-24 | 夏普株式会社 | 半导体装置及其制造方法 |
CN104025269A (zh) * | 2012-11-12 | 2014-09-03 | 深圳市柔宇科技有限公司 | 一种自对准金属氧化物薄膜晶体管器件及制造方法 |
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CN107820640A (zh) | 2018-03-20 |
US20200194572A1 (en) | 2020-06-18 |
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