WO2018062482A1 - 半導体装置の製造方法および実装装置 - Google Patents

半導体装置の製造方法および実装装置 Download PDF

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Publication number
WO2018062482A1
WO2018062482A1 PCT/JP2017/035469 JP2017035469W WO2018062482A1 WO 2018062482 A1 WO2018062482 A1 WO 2018062482A1 JP 2017035469 W JP2017035469 W JP 2017035469W WO 2018062482 A1 WO2018062482 A1 WO 2018062482A1
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chip
bonding
semiconductor chips
semiconductor
press
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PCT/JP2017/035469
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English (en)
French (fr)
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智宣 中村
前田　徹
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株式会社新川
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Priority to US16/337,925 priority Critical patent/US10847434B2/en
Priority to KR1020197012051A priority patent/KR102147683B1/ko
Priority to CN201780073516.0A priority patent/CN110024093A/zh
Publication of WO2018062482A1 publication Critical patent/WO2018062482A1/ja

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Definitions

  • the present invention relates to a manufacturing method for manufacturing a semiconductor device by stacking a plurality of semiconductor chips and a semiconductor chip mounting apparatus.
  • Patent Document 1 discloses a technique for stacking and mounting a plurality of semiconductor chips.
  • a thermosetting adhesive film is laminated in advance on a bump forming surface of a semiconductor chip.
  • a plurality of semiconductor chips are sequentially stacked on a substrate or another semiconductor chip while temporarily pressing to form a multistage temporary pressing laminate.
  • the multi-stage temporary press-bonded laminate is pressed and heated from above, thereby performing a main press-bonding step for melting the bumps and curing the thermosetting adhesive film.
  • target number of layers the number of stacked semiconductor chips
  • the semiconductor on the lower layer side The chip may not be mounted properly. That is, in this press-bonding, the multistage temporary press-bonded laminate is heated by pressing a heated heat tool against the uppermost surface of the multistage temporary press-bonded stack. A thermal gradient occurs from the top to the bottom due to heat conduction.
  • the semiconductor chip on the lower layer side may not be sufficiently heated. In this case, since the bumps of the lower semiconductor chip are not sufficiently melted or the thermosetting adhesive film is not sufficiently cured, the lower semiconductor chip is not properly mounted.
  • an object of the present invention is to provide a semiconductor device manufacturing method and a mounting apparatus capable of appropriately mounting each semiconductor chip even when the number of stacked semiconductor chips is large.
  • the mounting method of the present invention is a manufacturing method for manufacturing a semiconductor device by stacking a predetermined target number of semiconductor chips on a substrate, and sequentially mounting one or more semiconductor chips on the substrate.
  • the second stacking step and the second final crimping are performed until the total number of stacked semiconductor chips reaches the target stacking number. Repeat the process.
  • a plurality of arrangement regions are set on the substrate, and in the first stacking step and the first final crimping step, one semiconductor chip is temporarily crimped and finally crimped.
  • the second lamination step is performed after the first main crimping step is performed in all the arrangement regions.
  • Another mounting apparatus is a mounting apparatus that stacks and mounts a predetermined target number of semiconductor chips on a substrate, and the semiconductor chip is disposed on the substrate or a lower semiconductor chip.
  • a temporary press-bonding means for press-bonding by heating with a first load while heating at a first temperature from above, and a chip stack, which is a stack of one or more semiconductor chips, from above, higher than the first temperature By applying pressure with a second load while heating at the second temperature, the main pressure bonding means for collectively pressure bonding one or more semiconductor chips constituting the chip stack, and the temporary pressure bonding means and the main pressure bonding means are controlled.
  • the first chip A first final crimping process in which the one or more semiconductor chips constituting the layered body are finally crimped together by the permanent crimping means, and two or more semiconductor chips are sequentially placed on the temporary crimped semiconductor chip.
  • the second final crimping process is performed by the temporary crimping unit and the final crimping unit.
  • Another mounting device is a mounting device for stacking and mounting a predetermined target number of semiconductor chips on a substrate, and mounting the semiconductor chip disposed on the substrate or a lower semiconductor chip.
  • the chip laminated body that is a laminated body of one or more semiconductor chips is heated from the upper side at the second temperature higher than the first temperature.
  • the control unit includes a bonding unit that collectively press-bonds one or more semiconductor chips constituting the chip stacked body by pressurizing with a second load while heating, and a control unit that controls the bonding unit.
  • the first stack processing unit for forming a first chip stack by sequentially pressing one or more semiconductor chips on the substrate by the bonding unit sequentially, and the first chip stack
  • a first final crimping unit that collectively press-bonds the one or more semiconductor chips to be formed at once by the bonding unit, and two or more semiconductor chips are sequentially provisionally bonded by the bonding unit on the finally-bonded semiconductor chip.
  • a second stacking unit that forms a second chip stack and a two-semiconductor chip that constitutes the second chip stack are collectively bonded together by the bonding unit by laminating while pressing. And a main pressure bonding processing section.
  • the stacking step and the main pressing step are repeated at least twice. For this reason, it is not necessary to perform final pressure bonding of the semiconductor chips having the target number of layers at once, and the semiconductor chips on the lower layer side can also be reliably heated. As a result, when semiconductor chips are stacked and mounted, each semiconductor chip can be mounted appropriately even if the number of stacked layers is large.
  • FIG. 1 It is a figure which shows the structure of the mounting apparatus which is embodiment of this invention. It is a schematic perspective view of the semiconductor wafer which functions as a substrate. It is a figure which shows the structure of the semiconductor chip mounted. It is a figure which shows the structure of a semiconductor device. It is a figure which shows the flow which laminates
  • FIG. 1 is a schematic configuration diagram of a mounting apparatus 100 according to an embodiment of the present invention.
  • the mounting apparatus 100 is an apparatus for mounting the semiconductor chip 10 on the substrate 30.
  • the mounting apparatus 100 has a particularly suitable configuration when a plurality of semiconductor chips 10 are stacked and mounted.
  • the mounting apparatus 100 includes a chip supply unit 102, a chip transport unit 104, a bonding unit 106, and a control unit (not shown) that controls driving of these units.
  • the chip supply unit 102 is a part that takes out the semiconductor chip 10 from the chip supply source and supplies it to the chip transport unit 104.
  • the chip supply unit 102 includes a protrusion 110, a die picker 114, a transfer head 116, and a control unit 130 that controls each part of the mounting apparatus.
  • the plurality of semiconductor chips 10 are placed on the dicing tape TE. At this time, the semiconductor chip 10 is placed in a face-up state with the bumps 18 facing upward.
  • the protruding portion 110 pushes up only one semiconductor chip 10 out of the plurality of semiconductor chips 10 in the face-up state.
  • the die picker 114 receives the semiconductor chip 10 pushed up by the protruding portion 110.
  • the die picker 114 that has received the semiconductor chip 10 rotates 180 degrees on the spot so that the bumps 18 of the semiconductor chip 10 face downward, that is, the semiconductor chip 10 is in a face-down state. In this state, the transfer head 116 receives the semiconductor chip 10 from the die picker 114.
  • the transfer head 116 is movable in the vertical and horizontal directions, and can hold the semiconductor chip 10 by suction at its lower end.
  • the transfer head 116 holds the semiconductor chip 10 by suction at its lower end. Thereafter, the transfer head 116 moves in the horizontal and vertical directions and moves to the chip transfer unit 104.
  • the chip transport unit 104 has a turntable 118 that rotates about a vertical rotation axis Ra.
  • the transfer head 116 places the semiconductor chip 10 at a predetermined position on the turntable 118.
  • the turntable 118 on which the semiconductor chip 10 is placed rotates about the rotation axis Ra, the semiconductor chip 10 is transferred to the bonding unit 106 located on the side opposite to the chip supply unit 102.
  • the bonding unit 106 includes a stage 120 that supports the substrate 30, a mounting head 122 that holds the semiconductor chip 10 and attaches to the substrate 30, and the like.
  • the bonding portion 106 functions as a temporary pressure bonding unit that temporarily pressure-bonds the semiconductor chip 10 and also functions as a main pressure bonding unit that pressure-bonds the semiconductor chip 10.
  • the stage 120 is movable in the horizontal direction and adjusts the relative positional relationship between the mounted substrate 30 and the mounting head 122. Further, the stage 120 may include a heater.
  • the mounting head 122 can hold the semiconductor chip 10 at the lower end thereof, and can rotate and move up and down around the vertical rotation axis Rb.
  • the mounting head 122 presses the semiconductor chip 10 onto the substrate 30 or other semiconductor chip 10 placed on the stage 120. Specifically, the mounting head 122 is lowered so as to press the held semiconductor chip 10 against the substrate 30 or the like, whereby the semiconductor chip 10 is temporarily bonded or permanently bonded.
  • the mounting head 122 has a built-in temperature variable heater.
  • the mounting head 122 has a second temperature higher than the first temperature T1 at the first temperature T1, which will be described later, at the time of performing the temporary pressure bonding, and at the time of the main pressure bonding. Heated to T2. Further, the mounting head 122 applies a first load Ft1 to the semiconductor chip 10 when performing the temporary pressure bonding and a second load Ft2 when performing the main pressure bonding.
  • a camera (not shown) is provided near the mounting head 122.
  • Each of the substrate 30 and the semiconductor chip 10 is provided with an alignment mark serving as a positioning reference.
  • the camera images the substrate 30 and the semiconductor chip 10 so that this alignment mark is reflected.
  • the control unit 130 grasps the relative positional relationship between the substrate 30 and the semiconductor chip 10 based on the image data obtained by the imaging, and rotates the rotation angle around the axis Rb of the mounting head 122 and the stage 120 as necessary. Adjust the horizontal position.
  • the control unit 130 controls the driving of each unit, and includes, for example, a CPU that performs various calculations and a storage unit 138 that stores various data and programs.
  • the control unit 130 reads the program from the storage unit 138 and functions as a first lamination processing unit 132, a first main crimping processing unit 134, a second lamination processing unit 135, and a second main crimping processing unit 136.
  • the first stack processing unit 132 forms a first chip stack by sequentially pressing one or more semiconductor chips 10 on the substrate 30 in order by the bonding unit 106.
  • the first main press-bonding processing unit 134 collectively press-bonds one or more semiconductor chips 10 constituting the first chip stacked body by the bonding unit 106.
  • the second stacking processing unit 135 forms a second chip stacked body by stacking two or more semiconductor chips 10 on the semiconductor chip 10 that has been subjected to the final press bonding, while sequentially bonding the temporary bonding by the bonding unit 106. .
  • the second final press-bonding processing unit 136 collectively press-bonds two or more semiconductor chips 10 constituting the second chip stacked body by the bonding unit 106.
  • both the temporary pressure bonding and the main pressure bonding are performed by one mounting head 122, but a pressure head for temporary pressure bonding and a pressure head for main pressure bonding may be provided.
  • the stage 120 is configured to move horizontally, but the mounting head 122 may be configured to move horizontally instead of or in addition to the stage 120.
  • the configurations of the chip supply unit 102, the chip transfer unit 104, and the like may be changed as appropriate.
  • FIG. 2 is a schematic image diagram of the substrate 30 (semiconductor wafer) used in the present embodiment. As shown in FIG. 2, a plurality of arrangement regions 34 arranged in a lattice pattern are set on the substrate 30. In each arrangement region 34, a plurality of semiconductor chips 10 are stacked and mounted.
  • FIG. 3 is a diagram showing a schematic configuration of the semiconductor chip 10 to be mounted. Electrode terminals 14 and 16 are formed on the upper and lower surfaces of the semiconductor chip 10. Further, bumps 18 are formed on one surface of the semiconductor chip 10 so as to continue to the electrode terminals 14. The bump 18 is made of a conductive metal and melts at a predetermined melting temperature Tm.
  • a non-conductive film (hereinafter referred to as “NCF”) 20 is attached to one surface of the semiconductor chip 10 so as to cover the bumps 18.
  • the NCF 20 functions as an adhesive that bonds the semiconductor chip 10 to the substrate 30 or another semiconductor chip 10, and is a non-conductive thermosetting resin such as a polyimide resin, an epoxy resin, an acrylic resin, or a phenoxy resin. And polyethersulfone resin.
  • the thickness of the NCF 20 is larger than the average height of the bumps 18, and the bumps 18 are almost completely covered with the NCF 20.
  • NCF20 is a solid film at room temperature, but when it exceeds a predetermined softening start temperature Ts, it gradually softens and exhibits fluidity, and when it exceeds a predetermined curing start temperature Tt, it is irreversibly cured. Begin to.
  • the softening start temperature Ts is lower than the melting temperature Tm and the curing start temperature Tt of the bump 18.
  • the first temperature T1 for temporary pressure bonding is higher than the softening start temperature Ts and lower than the melting temperature Tm and the curing start temperature Tt.
  • the second temperature T2 for main press bonding is higher than the melting temperature Tm and the curing start temperature Tt. That is, Ts ⁇ T1 ⁇ (Tm, Tt) ⁇ T2.
  • the mounting head 122 When the semiconductor chip 10 is temporarily bonded to the substrate 30 or the lower semiconductor chip 10 (hereinafter referred to as a “bonded body”), the mounting head 122 is heated to the first temperature T1, and then the semiconductor chip 10 is added. Press. At this time, the NCF 20 of the semiconductor chip 10 is heated to near the first temperature T1 by heat transfer from the mounting head 122, softens, and has fluidity. As a result, the NCF 20 flows into the gap between the semiconductor chip 10 and the object to be bonded, and the gap can be reliably filled.
  • the mounting head 122 is heated to the second temperature T2, and then the semiconductor chip 10 is pressurized.
  • the bumps 18 and the NCF 20 of the semiconductor chip 10 are heated to near the second temperature T ⁇ b> 2 by heat transfer from the mounting head 122.
  • the bumps 18 are melted and can be welded to the opposing pressure-bonded bodies.
  • the NCF 20 is cured in a state in which the gap between the semiconductor chip 10 and the object to be pressed is filled, so that the semiconductor chip 10 and the object to be pressed are firmly fixed.
  • FIG. 4 is a diagram illustrating a configuration of a semiconductor device in which a plurality of semiconductor chips 10 are stacked and mounted on a substrate 30.
  • the semiconductor device is configured by stacking and mounting a target number of semiconductor chips 10 in each of a plurality of arrangement regions 34.
  • the target number of layers is “8”
  • eight semiconductor chips 10 are stacked and mounted in one arrangement region 34.
  • a stack of eight semiconductor chips 10 is referred to as a “completed stack ST0”.
  • the completed stacked body ST0 is handled by dividing it into a plurality of chip stacked bodies, specifically, a first chip stacked body ST1 and a second chip stacked body ST2.
  • the first chip stacked body ST ⁇ b> 1 is a stacked body including four semiconductor chips 10 stacked on the substrate 30.
  • the second chip stacked body ST2 is a stacked body including four semiconductor chips 10 stacked on the first chip stacked body ST1.
  • the second stacking step and the second stack for forming the second chip stack ST2 are performed after the first stacking step and the first main press-bonding step are performed to form the first chip stack ST1. Execute the process.
  • the reason why one completed stacked body ST0 is divided into two or more chip stacked bodies ST1 and ST2 is to satisfactorily mount all the semiconductor chips 10, which will be described later. .
  • FIGS. 5 to 7 are image diagrams showing the flow of mounting the semiconductor chip 10.
  • FIG. 5 to FIG. 7 three arrangement regions 34 are illustrated. For convenience of explanation, these regions are referred to as region A, region B, and region C in order from the left side. Further, the mounting procedure described below may be performed under normal pressure, or may be performed in a vacuum in order to prevent air bubbles from being caught.
  • each of the chip stacks ST1 and ST2 is formed by sequentially stacking four semiconductor chips 10 while temporarily press-bonding to form the chip stacks ST1 and ST2 in a temporarily press-bonded state, and the chip stacks ST1 and ST2. Mounting is performed by performing a main press-bonding step of performing main press-bonding of the four semiconductor chips 10 at once by applying heat and pressure at the second temperature T2 from above.
  • the semiconductor chip 10 is arranged in the region A on the substrate 30 using the mounting head 122.
  • the substrate 30 is positioned with respect to the semiconductor chip 10 so that the bumps 18 of the semiconductor chip 10 face the electrode terminals 32 on the substrate 30.
  • the mounting head 122 is heated to the first temperature T1, which is a temperature for temporary pressure bonding.
  • the semiconductor chip 10 is pressurized with a specified first load Ft1 by the mounting head 122 to temporarily press the semiconductor chip 10 to the substrate 30.
  • the NCF 20 is heated to the softening start temperature Ts or higher and exhibits appropriate fluidity.
  • the NCF 20 fills the gap between the semiconductor chip 10 and the substrate 30 without any gaps.
  • the first load Ft1 is not particularly limited as long as the bump 18 pushes the softened NCF 20 so that the bump 18 can contact the electrode terminal 32 of the substrate 30 and the bump 18 is not greatly deformed.
  • the second-layer semiconductor chip 10 is further temporarily bonded onto the temporarily-bonded first-layer semiconductor chip 10.
  • the bumps 18 of the second semiconductor chip 10 are formed on the first semiconductor chip 10 by using the mounting head 122 in the same manner as in the first layer.
  • the second-layer semiconductor chip 10 is disposed on the first-layer semiconductor chip 10 so as to face the electrode terminals 16. In this state, the second-layer semiconductor chip 10 is pressurized at the first load Ft1 while being heated at the first temperature T1, and temporarily bonded to the first-layer semiconductor chip 10.
  • FIG. 5C shows a state where the four layers of semiconductor chips 10 are stacked while being temporarily pressed in the region A.
  • the process of laminating these four semiconductor chips 10 is the first laminating process, and the formed laminated body becomes the first chip laminated body ST1 in a temporarily press-bonded state.
  • FIG. 6A shows a state where four semiconductor chips 10 are stacked while being temporarily bonded to all the arrangement regions 34 to form a first chip stacked body ST1 in a temporarily pressed state.
  • first main press-bonding step for performing the main press-bonding of the first chip stack ST1 is performed. Specifically, first, the mounting head 122 is heated to a second temperature T2, which is a temperature for main press bonding. Then, as shown in FIG. 6B, the first chip stacked body ST1 in the temporarily press-bonded state is pressurized with the second load Ft2 using the mounting head 122 heated to the second temperature T2, and the four semiconductors The chip 10 is finally crimped together.
  • the second load Ft2 is not particularly limited as long as the pushing amount of the bump 18 can be appropriately maintained.
  • the four semiconductor chips 10 constituting the first chip stack ST1 are also heated.
  • the heating temperature decreases as the distance from the mounting head 122 increases.
  • the uppermost layer (fourth layer) semiconductor chip 10 is heated to substantially the same temperature as the second temperature T2, but the lowermost layer (first layer) semiconductor chip 10 starts from the second temperature T2.
  • the second temperature T2 is set so that the lower layer temperature Ta is higher than the melting temperature Tm and the curing start temperature Tt. That is, during the main pressure bonding, all four semiconductor chips 10 constituting the first chip stacked body ST1 are heated to a temperature higher than the melting temperature Tm and the curing start temperature Tt.
  • the NCF 20 of the semiconductor chip 10 is gradually cured. Then, as the NCF 20 is cured, the semiconductor chip 10 and the object to be bonded (the substrate 30 or the lower semiconductor chip 10) are mechanically firmly fixed. Further, the bump 18 is melted by being heated beyond the melting temperature Tm, and can be in close contact with the opposing electrode terminals 32 and 16. As a result, the four semiconductor chips 10 and the substrate 30 are in a mounted state in which they are electrically joined to each other. And the process of carrying out this pressure bonding of the four semiconductor chips 10 which comprise this 1st chip laminated body ST1 collectively becomes a 1st main pressure bonding process.
  • the first final crimping step is executed in all of the two or more arrangement regions 34 such as the region B and the region C.
  • FIG. 6C shows a state in which the first final crimping process is performed on all the arrangement regions 34.
  • the second stacking step of forming the second chip stack ST2 in the temporarily press-bonded state on the first chip stack ST1 is executed. . Specifically, the temperature of the mounting head 122 is lowered to the first temperature T1, which is a temperature for temporary pressure bonding. Thereafter, as shown in FIG. 7A and FIG. 7B, four semiconductor chips 10 are newly stacked on the first chip stack ST1 that has been subjected to the final press-bonding process while being temporarily press-bonded. To go. Thereby, the stacked body to be formed is the second chip stacked body ST2, and the step of forming the second chip stacked body ST2 is the second stacking process.
  • the second stacking step is also executed in all the two or more arrangement regions 34. If the second chip stacked bodies ST2 in the temporarily press-bonded state are formed in all the arrangement regions 34, finally, the second final press-bonding step is executed, and all the second chip stacked bodies ST2 are finally press-bonded. And if all 2nd chip laminated body ST2 is this press-fit, a mounting process will be completed.
  • one completed stacked body ST0 is divided into a plurality (two in this example) of chip stacked bodies ST1 and ST2, and stacked for each chip stacked body ST1 and ST2.
  • the process and the main press bonding process are executed. The reason for this processing procedure will be described in comparison with the prior art.
  • the main pressure bonding is performed after all the target number of semiconductor chips 10 are stacked. That is, in the example of FIG. 4, eight semiconductor chips 10 are stacked while being temporarily pressed and then pressed while heating at the second temperature T ⁇ b> 2 from the upper side of the eighth semiconductor chip 10.
  • the heating temperature of the mounting head 122 is switched only once (switching between the first temperature T1 and the second temperature T2), the time required for raising and lowering the temperature of the mounting head 122 can be reduced. , Time for the entire mounting process can be shortened.
  • the lower semiconductor chip 10 cannot be heated appropriately, and there is a possibility that the NCF 20 is hardened and the bumps 18 are not sufficiently melted.
  • the heated mounting head 122 is pressed against the uppermost (eighth) semiconductor chip 10 to collectively put the eight semiconductor chips 10 together. This is crimped.
  • the distance H from the mounting head 122 to the lower semiconductor chip 10 becomes longer. If the distance H from the mounting head 122, which is a heat source, increases, the heating temperature also decreases accordingly. As a result, the lower semiconductor chip 10 is not sufficiently heated, and there is a possibility that the NCF 20 is hardened or the bumps 18 are not sufficiently melted.
  • the temperature of the mounting head 122 if the temperature of the mounting head 122 is raised, the temperature of the lower semiconductor chip 10 can be kept high.
  • a temperature higher than the first temperature is required.
  • the melting of the bumps 18 of the upper layer chip and the accompanying alloy reaction progress, and further, the hardening and deterioration of the NCF 20 progress, so that the reliability is remarkably impaired. Therefore, the mounting head 122 could not be heated to an excessively high temperature.
  • the completed stacked body ST0 including the semiconductor chips having the target number of stacked layers is divided into a plurality of chip stacked bodies ST1 and ST2, and the stacking process is performed for each chip stacked body ST1 and ST2.
  • the main crimping process is performed.
  • FIG. 8 is an image diagram showing another mounting procedure.
  • This embodiment is different from the first embodiment in that the first chip stacked body ST ⁇ b> 1 is composed of one semiconductor chip 10.
  • next 1st chip laminated body ST1 is formed.
  • one semiconductor chip 10 is arranged in one arrangement region 34 (region A) with the mounting head 122 heated to the first temperature T1.
  • the first load Ft1 is applied, and the semiconductor chip 10 is temporarily bonded.
  • the temperature of the mounting head 122 is raised to the second temperature, and then the semiconductor chip 10 is pressurized with the second load Ft2.
  • FIG. 8A shows a state in which the first chip stack ST1 is formed in all the arrangement regions 34.
  • FIG. 8B is a diagram illustrating a state in which the second chip stacked body ST2 in the temporarily press-bonded state is formed.
  • FIG.8 (c) is a figure which shows the mode of a 2nd main crimping
  • the semiconductor chips 10 for four layers are further temporarily bonded onto each second chip stacked body ST2. Then, after the lamination, the second second laminating step and the second final crimping step for the final press-bonding may be performed. Furthermore, when the target number of layers is “10”, after the second stacking step and the second main press-bonding step of the second time described above, after stacking the semiconductor chips 10 for two layers while temporarily pressing, What is necessary is just to implement the 3rd 2nd lamination
  • the number of stacked chips of the first chip stacked body ST1 is one.
  • the semiconductor chip 10 of the first layer is finally pressure-bonded, and then the semiconductor chips of the second and subsequent layers are stacked.
  • the reason for this configuration is as follows.
  • the substrate 30 in the present embodiment is a semiconductor wafer made of silicon or the like. This semiconductor wafer has a higher thermal conductivity than a normal resin substrate or the like. For this reason, the heat applied to the chip stack in the region A by the main pressure bonding may be transferred to the chip stack in the adjacent region B.
  • FIG. 6B it is assumed that the first layer semiconductor chip 10 is in a temporarily press-bonded state in the region B adjacent to the region A when the chip stacked body in the region A is finally press-bonded. .
  • the heat transferred through the chip stack in the region A and the substrate 30 is also transferred to the first semiconductor chip 10 in the region B.
  • the NCF 20 of the first semiconductor chip 10 in the region B starts to be cured by the transmitted heat. As described above, when the NCF 20 is cured before the main pressure bonding, the semiconductor chip 10 is not sufficiently fixed to the substrate 30.
  • the semiconductor chip 10 in the second and subsequent layers in this region B has a long heat path from the heat source (mounting head 122), so the amount of heat transfer is small, and the NCF 20 is hardly cured. Further, the semiconductor chip 10 that has been subjected to the final press-fitting is interposed in the middle of the heat path from the heat source to the semiconductor chip 10 in the second and subsequent layers in the region B. The NCF 20 is completely cured in the semiconductor chip 10 that has been subjected to this press-bonding, but the cured NCF 20 functions as a shielding material that prevents heat transfer. By interposing the semiconductor chip 10 that has been subjected to this press-bonding, the amount of heat transfer to the semiconductor chips 10 in the second and subsequent layers in the region B can be greatly reduced.
  • the NCF 20 of the second and subsequent semiconductor chips 10 can be hardened unexpectedly. It can. Further, according to the present embodiment, even if the temperature of the mounting head 122 is set high, the NCF 20 does not harden unexpectedly in the adjacent region. As a result, since the temperature of the mounting head 122 can be increased, the degree of freedom in setting the temperature of the mounting head 122 can be improved.
  • the structure demonstrated so far is an example, and when forming one completed laminated body ST0, if a lamination process and a main crimping
  • the execution order of the temporary pressure bonding and the main pressure bonding may be changed as appropriate.
  • the main crimping process is performed after the stacking process is completed in all of the plurality of arrangement regions 34.
  • the stacking process and the main crimping process may be performed serially for each arrangement region 34.
  • Good That is, after continuously performing the first lamination step, the first main pressure bonding step, the second lamination step, and the second main pressure bonding step in the region A, in the region B, the first lamination step, the first main pressure bonding step, the first You may make it perform a 2 lamination
  • the main press-bonding may be continuously performed.
  • the semiconductor chips 10 are stacked while being temporarily pressure-bonded to the third layer in each of the regions A to C. Thereafter, in the region A, the fourth-layer semiconductor chip 10 is pressurized and temporarily pressure-bonded by the mounting head 122 heated to the first temperature T1. If the fourth-layer semiconductor chip 10 can be pressurized, the pressure of the mounting head 122 is increased to the second temperature T2 while the fourth-layer semiconductor chip 10 is being pressed by the mounting head 122, and the main bonding is performed. To do.
  • the mounting head 122 is cooled to the first temperature T1, and then the fourth layer semiconductor chip 10 in the region B is temporarily pressure bonded. Thereafter, the pressure is raised to the second temperature T2 and the final pressure bonding is performed.
  • the number of times the temperature of the mounting head 122 is switched increases, but the amount of movement of the mounting head 122 can be reduced.
  • both the pre-crimping and the main press-bonding are performed by the mounting head 122.
  • the temporary press-bonding mounting head and the main press-bonding mounting head may be provided separately.
  • the mounting head dedicated for temporary crimping is always heated to the first temperature T1
  • the mounting head dedicated for final crimping is always heated to the second temperature T2.
  • the mounting head for main press-bonding may have a size capable of simultaneously heating and pressurizing (main press-bonding) two or more chip laminates.
  • the number of stacked first chip stacks is not particularly limited as long as it is 1 or more. Further, the number of stacked second chip stacks is not particularly limited as long as it is two or more. However, when the number of stacked single chip laminates is excessively large, the heat of the main press applied to the uppermost surface is not sufficiently transmitted to the lowermost layer, resulting in mounting defects. Therefore, the number of stacked chip stacks is set to be equal to or less than the number at which the heat of main press bonding can be appropriately transferred to the lowermost layer. The number of heat transferred appropriately varies depending on the material and configuration of the semiconductor chip 10, but when a general semiconductor chip 10 is used, it is desirable that the number of stacked layers of one chip stack is 4 or less. In this embodiment, a semiconductor wafer is used as the substrate 30. However, the substrate 30 is not limited to a semiconductor wafer and may be other types of substrates.

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Abstract

基板３０上に、規定の目標積層数の半導体チップ１０を積層して実装する実装方法は、前記基板３０の上において、１以上の半導体チップ１０を、順次、仮圧着しながら積層することで第一チップ積層体ＳＴ１を形成する第一積層工程と、前記第一チップ積層体ＳＴ１を上側から加熱しつつ加圧することで、前記１以上の半導体チップ１０を一括で本圧着する第一本圧着工程と、本圧着された半導体チップ１０の上において、２以上の半導体チップ１０を、順次、仮圧着しながら積層することで第二チップ積層体ＳＴ２を形成する第二積層工程と、前記第二チップ積層体ＳＴ２を上側から加熱しつつ加圧することで、前記２以上の半導体チップ１０を一括で本圧着する第二本圧着工程と、を含む。

Description

半導体装置の製造方法および実装装置
　本発明は、複数の半導体チップを積層して半導体装置を製造する製造方法および半導体チップの実装装置に関する。
　従来から、半導体装置の更なる高機能化、小型化が求められている。そこで、一部では、複数の半導体チップを積層して実装することが提案されている。例えば、特許文献１には、複数の半導体チップを積層実装する技術が開示されている。この特許文献１では、半導体チップのうちバンプ形成面に、予め熱硬化性接着剤フィルムをラミネートする。積層実装する際には、複数の半導体チップを、基板または他の半導体チップの上に順次、仮圧着しながら積層して多段仮圧着積層体を形成する。次に、この多段仮圧着積層体を上側から加圧かつ加熱することで、バンプを溶融させるとともに熱硬化性接着剤フィルムを硬化させる本圧着工程を実行する。こうした技術によれば、小さな面積で、より多数の半導体チップを実装できるため、更なる高機能化、小型化が可能となる。
特開２０１４－６０２４１号公報
　ここで、当然ながら、更なる高機能化、小型化を実現するためには、最終的に得られる半導体チップの積層数（以下「目標層数」という）を増やせばよい。しかし、特許文献１のように、目標層数分の半導体チップを積層した後に、当該目標層数分の半導体チップを一括で本圧着する技術の場合、目標層数が増えると、下層側の半導体チップが適切に実装できないおそれがある。すなわち、本圧着では、多段仮圧着積層体の最上面に、加熱したヒートツールを押し当てることで、当該多段仮圧着積層体を加熱している。熱伝導により上部から下部に向かい温度勾配が生じる。積層数が増えて、ヒートツールからの距離が過度に長くなると、下層側の半導体チップが十分に加熱されないことがある。この場合、当該下層側の半導体チップのバンプが十分に溶融しない、あるいは、熱硬化性接着剤フィルムが十分に硬化しないため、下層側の半導体チップが適切に実装されない。
　そこで、本発明では、半導体チップを積層実装する際、積層数が多くても、各半導体チップを適切に実装できる半導体装置の製造方法および実装装置を提供することを目的とする。
　本発明の実装方法は、基板上に、規定の目標積層数の半導体チップを積層して半導体装置を製造する製造方法であって、前記基板の上において、１以上の半導体チップを、順次、仮圧着しながら積層することで第一チップ積層体を形成する第一積層工程と、前記第一チップ積層体を上側から加熱しつつ加圧することで、前記１以上の半導体チップを一括で本圧着する第一本圧着工程と、本圧着された半導体チップの上において、２以上の半導体チップを、順次、仮圧着しながら積層することで第二チップ積層体を形成する第二積層工程と、前記第二チップ積層体を上側から加熱しつつ加圧することで、前記２以上の半導体チップを一括で本圧着する第二本圧着工程と、を含む、ことを特徴とする。
　好適な態様では、前記第一積層工程および前記第一本圧着工程を実行した後、前記半導体チップの総積層数が、前記目標積層数に達するまで、前記第二積層工程および前記第二本圧着工程を、くり返す。
　他の好適な態様では、前記基板には、複数の配置領域が設定されており、前記第一積層工程および第一本圧着工程では、１つの半導体チップを仮圧着および本圧着しており、２以上の前記配置領域全てにおいて前記第一本圧着工程を実行した後に、前記第二積層工程を実行する。
　他の本発明である実装装置は、基板上に、規定の目標積層数の半導体チップを積層して実装する実装装置であって、前記基板または下層の半導体チップの上に配置された前記半導体チップを、上側から第一温度で加熱しつつ第一荷重で加圧することで仮圧着する仮圧着手段と、１以上の半導体チップの積層体であるチップ積層体を、上側から、第一温度より高い第二温度で加熱しつつ第二荷重で加圧することで、前記チップ積層体を構成する１以上の半導体チップを一括で本圧着する本圧着手段と、前記仮圧着手段および本圧着手段を制御する制御部と、を備え、前記制御部は、前記基板の上において、１以上の半導体チップを、順次、前記仮圧着手段により仮圧着することで第一チップ積層体を形成する第一積層処理と、前記第一チップ積層体を構成する前記１以上の半導体チップを前記本圧着手段により一括で本圧着する第一本圧着処理と、本圧着された半導体チップの上において、２以上の半導体チップを、順次、前記仮圧着手段により仮圧着しながら積層することで第二チップ積層体を形成する第二積層処理と、前記第二チップ積層体を構成する前記２以上の半導体チップを前記本圧着手段により一括で本圧着する第二本圧着処理と、を前記仮圧着手段および本圧着手段に実行させる、ことを特徴とする。
　他の本発明である実装装置は、基板上に規定の目標積層数の半導体チップを積層して実装する実装装置であって、前記基板または下層の半導体チップの上に配置された前記半導体チップを、上側から第一温度で加熱しつつ第一荷重で加圧することで仮圧着するとともに、１以上の半導体チップの積層体であるチップ積層体を、上側から、第一温度より高い第二温度で加熱しつつ第二荷重で加圧することで、前記チップ積層体を構成する１以上の半導体チップを一括で本圧着するボンディング部と、前記ボンディング部を制御する制御部と、を備え、前記制御部は、前記基板の上において、１以上の半導体チップを、順次、前記ボンディング部により仮圧着することで第一チップ積層体を形成する第一積層処理部と、前記第一チップ積層体を構成する前記１以上の半導体チップを前記ボンディング部により一括で本圧着する第一本圧着処理部と、本圧着された半導体チップの上において、２以上の半導体チップを、順次、前記ボンディング部により仮圧着しながら積層することで、第二チップ積層体を形成する第二積層処理部と、前記第二チップ積層体を構成する前記２以上の半導体チップを前記ボンディング部により一括で本圧着する第二本圧着処理部と、を備える、ことを特徴とする。
　本発明によれば、規定の目標積層数の半導体チップを積層する際に、積層工程と本圧着工程とを少なくとも２回くり返す。そのため、目標積層数の半導体チップを一括で本圧着する必要がなく、下層側の半導体チップも確実に加熱できる。その結果、半導体チップを積層実装する際、積層数が多くても、各半導体チップを適切に実装できる。
本発明の実施形態である実装装置の構成を示す図である。 基板として機能する半導体ウェハの概略斜視図である。 実装される半導体チップの構成を示す図である。 半導体装置の構成を示す図である。 複数の半導体チップを積層して実装する流れを示す図である。 複数の半導体チップを積層して実装する流れを示す図である。 複数の半導体チップを積層して実装する流れを示す図である。 複数の半導体チップを積層して実装する他の例の流れを示す図である。
　以下、本発明の実施形態について図面を参照して説明する。図１は、本発明の実施形態である実装装置１００の概略構成図である。この実装装置１００は、基板３０の上に、半導体チップ１０を実装する装置である。この実装装置１００は、複数の半導体チップ１０を積層して実装する場合に特に好適な構成となっている。
　実装装置１００は、チップ供給部１０２、チップ搬送部１０４、ボンディング部１０６、および、これらの駆動を制御する制御部（図示せず）と、を備える。チップ供給部１０２は、チップ供給源から半導体チップ１０を取り出し、チップ搬送部１０４に供給する部位である。このチップ供給部１０２は、突上部１１０とダイピッカ１１４と移送ヘッド１１６と、実装装置の各部を制御する制御部１３０を備えている。
　チップ供給部１０２において、複数の半導体チップ１０は、ダイシングテープＴＥ上に載置されている。このとき半導体チップ１０は、バンプ１８が上側を向いたフェイスアップ状態で載置されている。突上部１１０は、この複数の半導体チップ１０の中から一つの半導体チップ１０のみを、フェイスアップ状態のまま、上方に突き上げる。ダイピッカ１１４は、突上部１１０により突き上げられた半導体チップ１０を受け取る。半導体チップ１０を受け取ったダイピッカ１１４は、当該半導体チップ１０のバンプ１８が下方を向くように、すなわち、半導体チップ１０がフェイスダウン状態になるように、その場で１８０度回転する。この状態になれば、移送ヘッド１１６が、ダイピッカ１１４から半導体チップ１０を受け取る。
　移送ヘッド１１６は、上下および水平方向に移動可能であり、その下端で、半導体チップ１０を吸着保持できる。ダイピッカ１１４が１８０度回転して、半導体チップ１０がフェイスダウン状態となれば、移送ヘッド１１６は、その下端で、当該半導体チップ１０を吸着保持する。その後、移送ヘッド１１６は、水平および上下方向に移動して、チップ搬送部１０４へと移動する。
　チップ搬送部１０４は、鉛直な回転軸Ｒａを中心として回転する回転台１１８を有している。移送ヘッド１１６は、回転台１１８の所定位置に、半導体チップ１０を載置する。半導体チップ１０が載置された回転台１１８が回転軸Ｒａを中心として回転することで、当該半導体チップ１０が、チップ供給部１０２と反対側に位置するボンディング部１０６に搬送される。
　ボンディング部１０６は、基板３０を支持するステージ１２０や半導体チップ１０を保持して基板３０に取り付ける実装ヘッド１２２等を備えている。このボンディング部１０６は、半導体チップ１０を仮圧着する仮圧着手段として機能するとともに、半導体チップ１０を本圧着する本圧着手段としても機能する。ステージ１２０は、水平方向に移動可能であり、載置されている基板３０と実装ヘッド１２２との相対位置関係を調整する。また、このステージ１２０には、ヒータが内蔵されてもよい。
　実装ヘッド１２２は、その下端に半導体チップ１０を保持でき、また、鉛直な回転軸Ｒｂ回りの回転と、昇降と、が可能となっている。この実装ヘッド１２２は、半導体チップ１０をステージ１２０に載置された基板３０または他の半導体チップ１０の上に圧着する。具体的には、保持している半導体チップ１０を基板３０等に押し付けるように、実装ヘッド１２２が、下降することで、半導体チップ１０の仮圧着または本圧着が行われる。この実装ヘッド１２２には、温度可変のヒータが内蔵されており、実装ヘッド１２２は、仮圧着実行時には、後述する第一温度Ｔ１に、本圧着実行時には、第一温度Ｔ１よりも高い第二温度Ｔ２に加熱される。また、実装ヘッド１２２は、仮圧着実行時には、第一荷重Ｆｔ１を、本圧着実行時には、第二荷重Ｆｔ２を、半導体チップ１０に付加する。
　実装ヘッド１２２の近傍には、カメラ（図示せず）が設けられている。基板３０および半導体チップ１０には、それぞれ、位置決めの基準となるアライメントマークが付されている。カメラは、このアライメントマークが映るように、基板３０および半導体チップ１０を撮像する。制御部１３０は、この撮像により得られた画像データに基づいて、基板３０および半導体チップ１０の相対位置関係を把握し、必要に応じて、実装ヘッド１２２の軸Ｒｂ回りの回転角度およびステージ１２０の水平位置を調整する。
　制御部１３０は、各部の駆動を制御するもので、例えば、各種演算を行うＣＰＵと、各種データやプログラムを記憶する記憶部１３８と、を備えている。この制御部１３０は、記憶部１３８からプログラムを読み込むことにより、第一積層処理部１３２、第一本圧着処理部１３４、第二積層処理部１３５、および、第二本圧着処理部１３６として機能する。第一積層処理部１３２は、基板３０の上において、１以上の半導体チップ１０を、順次、ボンディング部１０６により仮圧着することで第一チップ積層体を形成する。第一本圧着処理部１３４は、第一チップ積層体を構成する１以上の半導体チップ１０をボンディング部１０６により一括で本圧着する。第二積層処理部１３５は、本圧着された半導体チップ１０の上において、２以上の半導体チップ１０を、順次、ボンディング部１０６により仮圧着しながら積層することで、第二チップ積層体を形成する。第二本圧着処理部１３６は、第二チップ積層体を構成する２以上の半導体チップ１０をボンディング部１０６により一括で本圧着する。
　なお、ここで説明した実装装置１００の構成は、一例であり、適宜、変更されてもよい。例えば、本実施形態では、一つの実装ヘッド１２２で、仮圧着および本圧着の双方を行っているが、仮圧着用の加圧ヘッドと、本圧着用の加圧ヘッドとを、設けてもよい。また、本実施形態では、ステージ１２０が水平移動する構成としているが、ステージ１２０に替えて、または、加えて、実装ヘッド１２２が水平移動する構成としてもよい。また、チップ供給部１０２や、チップ搬送部１０４等の構成も、適宜、変更されてもよい。
　次に、この実装装置１００による半導体チップ１０の実装について説明する。本実施形態では、基板３０として半導体ウェハを使用し、この半導体ウェハ（基板３０）の上に、複数の半導体チップ１０を積層実装する。したがって、本実施形態の実装プロセスは、半導体ウェハの回路形成面に半導体チップ１０を積層実装する、チップオンウェハプロセスとなる。図２は、本実施形態で使用する基板３０（半導体ウェハ）の概略イメージ図である。図２に示すように、基板３０には、格子状に並ぶ複数の配置領域３４が設定されている。各配置領域３４には、複数の半導体チップ１０が積層実装される。
　次に、半導体チップ１０の構成について簡単に説明する。図３は、実装される半導体チップ１０の概略構成を示す図である。半導体チップ１０の上下面には、電極端子１４，１６が形成されている。また、半導体チップ１０の片面には、電極端子１４に連なってバンプ１８が形成されている。バンプ１８は、導電性金属からなり、所定の溶融温度Ｔｍで溶融する。
　また、半導体チップ１０の片面には、バンプ１８を覆うように、非導電性フィルム（以下「ＮＣＦ」という）２０が貼り付けられている。ＮＣＦ２０は、半導体チップ１０と、基板３０または他の半導体チップ１０とを接着する接着剤として機能するもので、非導電性の熱硬化性樹脂、例えば、ポリイミド樹脂、エポキシ樹脂、アクリル樹脂、フェノキシ樹脂、ポリエーテルスルホン樹脂等からなる。このＮＣＦ２０の厚みは、バンプ１８の平均高さよりも大きく、バンプ１８は、このＮＣＦ２０によりほぼ完全に覆われている。ＮＣＦ２０は、常温下では、固体のフィルムであるが、所定の軟化開始温度Ｔｓを超えると、徐々に、軟化して流動性を発揮し、所定の硬化開始温度Ｔｔを超えると、不可逆的に硬化し始める。
　ここで、軟化開始温度Ｔｓは、バンプ１８の溶融温度Ｔｍおよび硬化開始温度Ｔｔよりも低い。仮圧着用の第一温度Ｔ１は、この軟化開始温度Ｔｓより高く、溶融温度Ｔｍおよび硬化開始温度Ｔｔよりも低い。また、本圧着用の第二温度Ｔ２は、溶融温度Ｔｍおよび硬化開始温度Ｔｔよりも高い。すなわち、Ｔｓ＜Ｔ１＜（Ｔｍ，Ｔｔ）＜Ｔ２となっている。
　半導体チップ１０を基板３０または下側の半導体チップ１０（以下「被圧着体」と呼ぶ）に仮圧着する際には、実装ヘッド１２２を、第一温度Ｔ１に加熱したうえで半導体チップ１０を加圧する。このとき、半導体チップ１０のＮＣＦ２０は、実装ヘッド１２２からの伝熱により、第一温度Ｔ１近傍まで加熱され、軟化し、流動性を持つ。そして、これにより、ＮＣＦ２０が、半導体チップ１０と被圧着体との隙間に流れ込み、当該隙間を確実に埋めることができる。
　半導体チップ１０を、被圧着体に本圧着する際には、実装ヘッド１２２を、第二温度Ｔ２に加熱したうえで、半導体チップ１０を加圧する。このとき、半導体チップ１０のバンプ１８およびＮＣＦ２０は、実装ヘッド１２２からの伝熱により、第二温度Ｔ２近傍まで加熱される。これにより、バンプ１８は、溶融し、対向する被圧着体に溶着できる。また、この加熱により、ＮＣＦ２０が、半導体チップ１０と被圧着体との隙間を埋めた状態で硬化するため、半導体チップ１０と被圧着体とが強固に固定される。
　次に、半導体チップ１０を積層実装して製造される半導体装置について説明する。図４は、基板３０に複数の半導体チップ１０を積層実装した半導体装置の構成を示す図である。半導体装置は、複数の配置領域３４それぞれに、目標積層数の半導体チップ１０を積層実装して構成される。本実施形態では、目標積層数を、「８」としており、一つの配置領域３４には、８つの半導体チップ１０が積層実装される。以下では、８つの半導体チップ１０を積層実装したものを「完成積層体ＳＴ０」と呼ぶ。
　本実施形態では、完成積層体ＳＴ０を、複数のチップ積層体、具体的には、第一チップ積層体ＳＴ１と第二チップ積層体ＳＴ２とに分けて取り扱う。第一チップ積層体ＳＴ１は、基板３０の上に積層された４つの半導体チップ１０から成る積層体である。また、第二チップ積層体ＳＴ２は、第一チップ積層体ＳＴ１の上に積層された４つの半導体チップ１０から成る積層体である。本実施形態では、第一チップ積層体ＳＴ１を形成するために第一積層工程および第一本圧着工程を実行した後に、第二チップ積層体ＳＴ２を形成するための第二積層工程および第二積層工程を実行する。このように、一つの完成積層体ＳＴ０を、２以上のチップ積層体ＳＴ１，ＳＴ２に分割して取り扱うのは、全ての半導体チップ１０を良好に実装するためであるが、これについては、後述する。
　次に、半導体チップ１０の実装の流れについて図５～図７を参照して説明する。図５～図７は、半導体チップ１０の実装の流れを示すイメージ図である。図５～図７では、三つの配置領域３４を図示しているが、説明の都合上、これらは、左側から順に、領域Ａ、領域Ｂ、領域Ｃと呼ぶ。また、以下で説明する実装の手順は、常圧下で行ってもよいし、気泡の噛みこみ等を防ぐために真空中で実施してもよい。
　本実施形態では、上述したように、まず、第一チップ積層体ＳＴ１を実装した後、当該第一チップ積層体ＳＴ１の上に、さらに、第二チップ積層体ＳＴ２を実装し、最終的に８層の完成積層体ＳＴ０を形成している。各チップ積層体ＳＴ１，ＳＴ２は、４つの半導体チップ１０を順次、仮圧着しながら積層して、仮圧着状態のチップ積層体ＳＴ１，ＳＴ２を形成する積層工程と、このチップ積層体ＳＴ１，ＳＴ２の上から第二温度Ｔ２で加熱加圧することで４つの半導体チップ１０を一括で本圧着する本圧着工程と、を実行することで実装される。
　具体的に説明すると、まず、最初に、図５（ａ）に示すように、実装ヘッド１２２を用いて、半導体チップ１０を基板３０上の領域Ａに配置する。このとき、半導体チップ１０のバンプ１８が、基板３０上の電極端子３２と向かい合うように、基板３０を半導体チップ１０に対して位置決めする。また、このとき、実装ヘッド１２２は、仮圧着用の温度である第一温度Ｔ１に加熱されている。次に、図５（ｂ）に示すように、実装ヘッド１２２で、半導体チップ１０を、規定の第一荷重Ｆｔ１で加圧し、半導体チップ１０を基板３０に仮圧着する。このとき、実装ヘッド１２２からの伝熱により、ＮＣＦ２０は、軟化開始温度Ｔｓ以上に加熱され、適度な流動性を発揮する。これにより、ＮＣＦ２０は、半導体チップ１０と基板３０との間隙を隙間なく埋める。なお、第一荷重Ｆｔ１は、バンプ１８が、軟化したＮＣＦ２０を押しのけて、基板３０の電極端子３２に接触でき、かつ、バンプ１８が大きく変形しない程度の大きさであれば、特に、限定されない。
　１層目の半導体チップ１０が仮圧着できれば、続いて、この仮圧着された１層目の半導体チップ１０の上に、さらに、２層目の半導体チップ１０を仮圧着する。２層目の半導体チップ１０を仮圧着する際は、１層目の場合と同様に、実装ヘッド１２２を用いて、２層目の半導体チップ１０のバンプ１８が、１層目の半導体チップ１０の電極端子１６と向かい合うように、２層目の半導体チップ１０を１層目の半導体チップ１０の上に配置する。そして、その状態で、２層目の半導体チップ１０を第一温度Ｔ１で加熱しつつ第一荷重Ｆｔ１で加圧して、１層目の半導体チップ１０に仮圧着する。
　以降、同様に、２層目の半導体チップ１０の上に、３層目の半導体チップ１０を、３層目の半導体チップ１０の上に４層目の半導体チップ１０を、仮圧着していく。図５（ｃ）は、領域Ａにおいて、４層の半導体チップ１０を仮圧着しながら積層した様子を示している。この４つの半導体チップ１０を積層する工程が、第一積層工程であり、形成された積層体が、仮圧着状態の第一チップ積層体ＳＴ１となる。
　領域Ａにおいて、仮圧着状態の第一チップ積層体ＳＴ１が形成できれば、同様の手順で、領域Ｂ，領域Ｃなど、他の配置領域３４にも、仮圧着状態の第一チップ積層体ＳＴ１を形成する。図６（ａ）は、全ての配置領域３４に、４つの半導体チップ１０を仮圧着しながら積層して、仮圧着状態の第一チップ積層体ＳＴ１を形成した様子を示している。
　全ての配置領域３４に、仮圧着状態の第一チップ積層体ＳＴ１が形成できれば、続いて、第一チップ積層体ＳＴ１を本圧着する第一本圧着工程を実行する。具体的には、まず、実装ヘッド１２２を、本圧着用の温度である第二温度Ｔ２まで加熱する。そして、図６（ｂ）に示すように、仮圧着状態の第一チップ積層体ＳＴ１を、第二温度Ｔ２に加熱された実装ヘッド１２２を用いて、第二荷重Ｆｔ２で加圧し、四つの半導体チップ１０を一括で本圧着する。なお、第二荷重Ｆｔ２は、バンプ１８の押し込み量を適切に保てるのであれば、特に限定されない。
　第二温度Ｔ２に加熱された実装ヘッド１２２で押圧されることにより、第一チップ積層体ＳＴ１を構成する四つの半導体チップ１０も加熱されることになる。ただし、加熱温度は、実装ヘッド１２２から離れるほど低下していく。具体的には、最上層（４層目）の半導体チップ１０は、第二温度Ｔ２とほぼ同じ温度に加熱されるが、最下層（１層目）の半導体チップ１０は、第二温度Ｔ２からΔＴだけ低下した下層温度Ｔａ＝Ｔ２－ΔＴで加熱されることになる。第二温度Ｔ２は、この下層温度Ｔａが、溶融温度Ｔｍおよび硬化開始温度Ｔｔより大きくなるように、設定されている。つまり、本圧着の際、第一チップ積層体ＳＴ１を構成する４つの半導体チップ１０は、全て、溶融温度Ｔｍおよび硬化開始温度Ｔｔよりも高い温度に加熱される。
　各半導体チップ１０が硬化開始温度Ｔｔを超えて加熱されることで、半導体チップ１０のＮＣＦ２０は、徐々に硬化していく。そして、ＮＣＦ２０が硬化することで、半導体チップ１０と被圧着体（基板３０または下側の半導体チップ１０）とが機械的に強固に固着される。また、溶融温度Ｔｍを超えて加熱されることで、バンプ１８が、溶融し、対向する電極端子３２，１６に密着できる。そして、これにより、四つの半導体チップ１０および基板３０が、互いに電気的に接合された実装状態となる。そして、この第一チップ積層体ＳＴ１を構成する四つの半導体チップ１０を一括で本圧着する工程が、第一本圧着工程となる。
　一つの第一チップ積層体ＳＴ１を本圧着できれば、続いて、他の第一チップ積層体ＳＴ１も、本圧着する。すなわち、領域Ｂ，領域Ｃ等、２以上の配置領域３４全てにおいて、第一本圧着工程を実行する。図６（ｃ）は、全ての配置領域３４に、第一本圧着工程を実行した様子を示している。
　全ての配置領域３４で、第一本圧着工程を実行すれば、続いて、第一チップ積層体ＳＴ１の上に、仮圧着状態の第二チップ積層体ＳＴ２を形成する第二積層工程を実行する。具体的には、実装ヘッド１２２の温度を、仮圧着用の温度である第一温度Ｔ１まで低下させる。その後は、図７（ａ）、図７（ｂ）に示すように、本圧着された第一チップ積層体ＳＴ１の上に、新たに、四つの半導体チップ１０を順次、仮圧着しながら積層していく。これにより、形成される積層体が、第二チップ積層体ＳＴ２であり、この第二チップ積層体ＳＴ２を形成する工程が第二積層工程である。第二積層工程も、２以上の配置領域３４全てにおいて、実行する。全ての配置領域３４に、仮圧着状態の第二チップ積層体ＳＴ２が形成されれば、最後に、第二本圧着工程を実行し、全ての第二チップ積層体ＳＴ２を本圧着する。そして、全ての第二チップ積層体ＳＴ２が本圧着されれば、実装工程は、完了となる。
　以上の説明で明らかな通り、本実施形態では、一つの完成積層体ＳＴ０を複数（本例では二つ）のチップ積層体ＳＴ１，ＳＴ２に分割し、各チップ積層体ＳＴ１，ＳＴ２ごとに、積層工程と本圧着工程とを実行している。かかる処理手順とする理由について、従来技術と比較して説明する。
　従来から、複数の半導体チップ１０を積層して実装する技術が知られている。ただし、従来の実装技術は、目標積層数の半導体チップ１０全てを積層した後に、本圧着を実行している。すなわち、図４の例では、８つの半導体チップ１０を、仮圧着しながら積層した後、８層目の半導体チップ１０の上側から第二温度Ｔ２で加熱しつつ加圧していた。かかる手順とした場合、実装ヘッド１２２の加熱温度の切り替え（第一温度Ｔ１－第二温度Ｔ２間の切り替え）が１回だけとなるため、実装ヘッド１２２の昇降温に要する時間を低減でき、ひいては、実装処理全体の時間を短縮できる。しかし、こうした従来技術の場合、下層の半導体チップ１０が適切に加熱できず、ＮＣＦ２０の硬化やバンプ１８の溶融が不十分になるおそれがあった。
　すなわち、従来技術では、８つの半導体チップ１０を積層実装する場合には、最上層（８層目）の半導体チップ１０に加熱された実装ヘッド１２２を押しあてて、８つの半導体チップ１０を一括で本圧着する。しかし、この場合、積層数が多いと、実装ヘッド１２２から下層の半導体チップ１０までの距離Ｈが長くなる。熱源である実装ヘッド１２２からの距離Ｈが長くなれば、その分、加熱温度も低下する。その結果、下層の半導体チップ１０は、十分に加熱されず、ＮＣＦ２０の硬化や、バンプ１８の溶融が不十分となるおそれがあった。
　ここで、当然ながら、実装ヘッド１２２の温度を高くすれば、下層の半導体チップ１０の温度を高く保てる。しかし、先に述べた上層、下層チップ間の温度勾配を考慮すると、第一温度よりも高温が必要となる。それによって、上層チップのバンプ１８の溶融、および、それに伴う合金反応が進行、さらには、ＮＣＦ２０の硬化、劣化が進むため、信頼性を著しく損ねる。したがって、実装ヘッド１２２を過度に高温に加熱することはできなかった。
　そこで、本実施形態では、上述したように、目標積層数の半導体チップからなる完成積層体ＳＴ０を、複数のチップ積層体ＳＴ１，ＳＴ２に分割し、各チップ積層体ＳＴ１，ＳＴ２ごとに積層工程と本圧着工程とを行っている。かかる処理手順とすることで、本圧着する際、実装ヘッド１２２から下層の半導体チップ１０までの距離を短くできる。そのため、本圧着用の温度である第二温度Ｔ２を過度に高温にしなくても、チップ積層体ＳＴ１，ＳＴ２の下層まで適切に加熱できる。その結果、半導体チップ１０を積層実装する際、積層数が多くても、各半導体チップ１０を適切に実装できる。
　次に、他の実施形態について、図８を参照して説明する。図８は、他の実装手順を示すイメージ図である。この実施形態では、第一チップ積層体ＳＴ１が、一つの半導体チップ１０で構成される点で、第一実施形態と異なる。また、本実施形態では、一つの第一チップ積層体ＳＴ１を形成してから、次の第一チップ積層体ＳＴ１を形成している。具体的に説明すると、本実施形態では、まず、第一温度Ｔ１に加熱した実装ヘッド１２２で、一つの半導体チップ１０を、一つの配置領域３４（領域Ａ）に配置する。そして、その状態で、第一荷重Ｆｔ１を付加し、半導体チップ１０を仮圧着する。その後、実装ヘッド１２２を、第二温度まで昇温したうえで、半導体チップ１０を、第二荷重Ｆｔ２で加圧する。つまり、第一積層工程と第一本圧着工程を連続して実行する。この工程で、本圧着された一つの半導体チップ１０が、第一チップ積層体ＳＴ１となる。領域Ａに、第一チップ積層体ＳＴ１が形成できれば、続いて、残りの配置領域３４である領域Ｂ，領域Ｃにも順次、第一チップ積層体ＳＴ１を形成する。図８（ａ）は、全ての配置領域３４に、第一チップ積層体ＳＴ１を形成した様子を示している。
　この状態になれば、続いて、第二チップ積層体ＳＴ２を形成する。この第二チップ積層体ＳＴ２の形成手順は、第一実施形態と同じである。すなわち、第一チップ積層体ＳＴ１の上に、複数（図示例では３つ）の半導体チップ１０を順次、第一温度Ｔ１に加熱した実装ヘッド１２２で仮圧着しながら積層し、仮圧着状態の第二チップ積層体ＳＴ２を形成する。一つの第二チップ積層体ＳＴ２が形成できれば、他の配置領域３４においても、同様に、第二チップ積層体ＳＴ２を形成する。すなわち、２以上の配置領域３４全てにおいて、第二積層工程を実行する。図８（ｂ）は、仮圧着状態の第二チップ積層体ＳＴ２が形成された様子を示す図である。続いて、実装ヘッド１２２を、本圧着用の第二温度Ｔ２まで加熱した状態で、第二チップ積層体ＳＴ２を加圧し、４つの半導体チップ１０を一括で本圧着していく。図８（ｃ）は、第二本圧着工程の様子を示す図である。一つの配置領域３４において、第二本圧着工程が完了すれば、残りの配置領域３４においても、同様に、第二本圧着工程を実施する。以降、半導体チップ１０の総積層数が、目標積層数に達するまで、第二積層工程と第二本圧着工程と、をくり返す。例えば、目標積層数が「８」の場合において、図８（ｃ）の状態になれば、続いて、各第二チップ積層体ＳＴ２の上に、さらに、４層分の半導体チップ１０を仮圧着しながら積層した後、本圧着する２回目の第二積層工程および第二本圧着工程を実施すればよい。さらに、目標積層数が「１０」の場合は、既述した２回目の第二積層工程および第二本圧着工程の後、さらに、２層分の半導体チップ１０を仮圧着しながら積層した後、本圧着する３回目の第二積層工程および第二本圧着工程を実施すればよい。
　ところで、以上の説明から明らかな通り、本実施形態では、第一チップ積層体ＳＴ１のチップ積層数を一つとしている。換言すれば、２以上の配置領域３４全てにおいて、１層目の半導体チップ１０を本圧着してから、２層目以降の半導体チップの積層を行っている。かかる構成とするのは、次の理由による。
　本実施形態における基板３０は、シリコン等からなる半導体ウェハである。この半導体ウェハは、通常の樹脂基板等に比して、熱伝導率が高い。そのため、本圧着により領域Ａのチップ積層体に付加された熱が、隣接する領域Ｂのチップ積層体にまで伝達することがある。このとき、図６（ｂ）に示すように、領域Ａのチップ積層体を本圧着する際に、領域Ａに隣接する領域Ｂにおいて、１層目の半導体チップ１０が仮圧着状態であったとする。この場合、領域Ａのチップ積層体、および、基板３０を介して伝達された熱が、領域Ｂの１層目の半導体チップ１０にも伝達される。そして、この伝達された熱により、領域Ｂの１層目の半導体チップ１０のＮＣＦ２０が硬化開始する場合がある。このように、本圧着の前に、ＮＣＦ２０が硬化すると、半導体チップ１０の基板３０への固定が不十分となる。
　そこで、本実施形態では、意図しないＮＣＦ２０の硬化を防ぐために、１層目の半導体チップ１０を全て、本圧着してから、２層目以降の半導体チップ１０の積層を実行している。かかる構成とした場合、図８（ｃ）に示すように、領域Ａにおいて２層目以降の半導体チップ１０を本圧着するときの熱は、領域Ａのチップ積層体、基板を介して、領域Ｂの１層目の半導体チップ１０にも伝達される。しかし、この領域Ｂの１層目の半導体チップ１０は、既に、本圧着されているため、伝熱されても問題は生じない。また、この領域Ｂの１層目の半導体チップ１０を介して、領域Ｂの２層目以降の半導体チップ１０にも伝熱される。しかし、この領域Ｂの２層目以降の半導体チップ１０は、熱源（実装ヘッド１２２）からの熱経路が長くなるため、伝熱量は小さく、ＮＣＦ２０の硬化は、生じにくい。さらに、熱源から領域Ｂの２層目以降の半導体チップ１０までの熱経路途中には、本圧着済の半導体チップ１０が介在する。この本圧着済の半導体チップ１０は、そのＮＣＦ２０が完全に硬化するが、硬化したＮＣＦ２０は、伝熱を妨げる遮蔽材として機能する。かかる本圧着済の半導体チップ１０が介在することで、領域Ｂの２層目以降の半導体チップ１０への伝熱量が大幅に低減できる。
　つまり、予め、全ての配置領域３４において、１層目の半導体チップ１０を本圧着しておくことで、２層目以降の半導体チップ１０のＮＣＦ２０が意に反して硬化することを効果的に防止できる。また、本実施形態によれば、実装ヘッド１２２の温度を高めに設定しても、隣接領域においてＮＣＦ２０が意に反して硬化することがない。その結果、実装ヘッド１２２の温度を高くすることが可能になるため、実装ヘッド１２２の温度設定の自由度を向上できる。
　なお、これまで説明した構成は、一例であり、一つの完成積層体ＳＴ０を形成するに当たって、積層工程と本圧着工程とを、２回以上くり返すのであれば、その他の構成は、適宜、変更されてもよい。例えば、仮圧着と本圧着との実行順序は、適宜、変更されてもよい。
　例えば、本実施形態では、複数の配置領域３４全てで積層工程が終わった後に、本圧着工程を実行しているが、各配置領域３４ごとに積層工程および本圧着工程をシリアルに実行してもよい。すなわち、領域Ａにおいて第一積層工程、第一本圧着工程、第二積層工程、第二本圧着工程を連続して実行した後、領域Ｂにおいて、第一積層工程、第一本圧着工程、第二積層工程、第二本圧着工程を行うようにしてもよい。かかる構成とした場合、実装ヘッド１２２の温度の切り替え回数は増加するが、本圧着を実行する積層体の近傍に、仮圧着状態の積層体は存在しないことになる。その結果、ＮＣＦ２０の意に反した硬化を防止できる。
　また、各チップ積層体ＳＴ１，ＳＴ２の最上層の半導体チップ１０を仮圧着する際に、連続して、本圧着を行うようにしてもよい。具体的には、第一実施形態において第一チップ積層体ＳＴ１を形成する際には、各領域Ａ～Ｃにおいて、３層目まで半導体チップ１０を仮圧着しながら積層する。その後、領域Ａにおいて、第一温度Ｔ１に加熱した実装ヘッド１２２で、４層目の半導体チップ１０を加圧して仮圧着する。４層目の半導体チップ１０が加圧できれば、実装ヘッド１２２で４層目の半導体チップ１０を加圧した状態のまま、実装ヘッド１２２の温度を第二温度Ｔ２まで上昇させて、本圧着を実行する。この場合、領域Ａの４層目の半導体チップ１０の本圧着が完了すれば、実装ヘッド１２２を第一温度Ｔ１まで降温したうえで、領域Ｂの４層目の半導体チップ１０の仮圧着を行い、その後、第二温度Ｔ２まで上昇させて本圧着する。かかる構成とした場合、実装ヘッド１２２の温度の切り替え回数は増加するが、実装ヘッド１２２の移動量は、低下できる。
　また、これまでの説明では、実装ヘッド１２２で、仮圧着および本圧着の双方を実行していたが、仮圧着用の実装ヘッドと、本圧着用の実装ヘッドと、を別個に設けてもよい。この場合、仮圧着専用の実装ヘッドは、常に、第一温度Ｔ１に、本圧着専用の実装ヘッドは、常に第二温度Ｔ２に加熱しておけばよい。かかる構成とすることで、実装ヘッドの温度の切り替えが不要となるため、実装ヘッドの昇降温に要する時間を無くすことができ、実装時間をより短縮できる。また、このとき、本圧着用の実装ヘッドは、２以上のチップ積層体を同時に加熱・加圧（本圧着）できるサイズとしてもよい。
　また、第一チップ積層体の積層数は、１以上であれば、特に限定されない。また、第二チップ積層体の積層数は、２以上であれば特に、限定されない。ただし、一つのチップ積層体の積層数が過度に多い場合、最上面に付与された本圧着の熱が、最下層まで十分に伝わらず、実装不良を生じる。そこで、チップ積層体の積層数は、本圧着の熱が、最下層にまで適切に伝熱され得る個数以下とする。適切に伝熱される個数は、半導体チップ１０の材質や構成によって異なるが、一般的な半導体チップ１０を用いる場合、一つのチップ積層体の積層数は、４以下であることが望ましい。また、本実施形態では、基板３０として半導体ウェハを用いたが、基板３０は、半導体ウェハに限らず、他の種類の基板でもよい。
　１０　半導体チップ、１４，１６，３２　電極端子、１８　バンプ、３０　基板、３４　配置領域、１００　実装装置、１０２　チップ供給部、１０４　チップ搬送部、１０６　ボンディング部、１１０　突上部、１１４　ダイピッカ、１１６　移送ヘッド、１１８　回転台、１２０　ステージ、１２２　実装ヘッド、ＳＴ０　完成積層体、ＳＴ１　第一チップ積層体、ＳＴ２　第二チップ積層体、ＴＥ　ダイシングテープ。

Claims (5)

  1. 　基板上に、規定の目標積層数の半導体チップを積層して半導体装置を製造する製造方法であって、
    　前記基板の上において、１以上の半導体チップを、順次、仮圧着しながら積層することで第一チップ積層体を形成する第一積層工程と、
    　前記第一チップ積層体を上側から加熱しつつ加圧することで、前記１以上の半導体チップを一括で本圧着する第一本圧着工程と、
    　本圧着された半導体チップの上において、２以上の半導体チップを、順次、仮圧着しながら積層することで第二チップ積層体を形成する第二積層工程と、
    　前記第二チップ積層体を上側から加熱しつつ加圧することで、前記２以上の半導体チップを一括で本圧着する第二本圧着工程と、
    　を含む、ことを特徴とする半導体装置の製造方法。
  2. 　請求項１に記載の半導体装置の製造方法であって、
    　前記第一積層工程および前記第一本圧着工程を実行した後、前記半導体チップの総積層数が、前記目標積層数に達するまで、前記第二積層工程および前記第二本圧着工程を、くり返す、ことを特徴とする半導体装置の製造方法。
  3. 　請求項１または２に記載の半導体装置の製造方法であって、
    　前記基板には、複数の配置領域が設定されており、
    　前記第一積層工程および第一本圧着工程では、１つの半導体チップを仮圧着および本圧着しており、
    　２以上の前記配置領域全てにおいて前記第一本圧着工程を実行した後に、前記第二積層工程を実行する、
    　ことを特徴とする半導体装置の製造方法。
  4. 　基板上に、規定の目標積層数の半導体チップを積層して実装する実装装置であって、
    　前記基板または下層の半導体チップの上に配置された前記半導体チップを、上側から第一温度で加熱しつつ第一荷重で加圧することで仮圧着する仮圧着手段と、
    　１以上の半導体チップの積層体であるチップ積層体を、上側から、第一温度より高い第二温度で加熱しつつ第二荷重で加圧することで、前記チップ積層体を構成する１以上の半導体チップを一括で本圧着する本圧着手段と、
    　前記仮圧着手段および本圧着手段を制御する制御部と、
    　を備え、前記制御部は、
    　前記基板の上において、１以上の半導体チップを、順次、前記仮圧着手段により仮圧着することで第一チップ積層体を形成する第一積層処理と、
    　前記第一チップ積層体を構成する前記１以上の半導体チップを前記本圧着手段により一括で本圧着する第一本圧着処理と、
    　本圧着された半導体チップの上において、２以上の半導体チップを、順次、前記仮圧着手段により仮圧着しながら積層することで第二チップ積層体を形成する第二積層処理と、
    　前記第二チップ積層体を構成する前記２以上の半導体チップを前記本圧着手段により一括で本圧着する第二本圧着処理と、
    　を前記仮圧着手段および本圧着手段に実行させる、
    　ことを特徴とする実装装置。
  5. 　基板上に規定の目標積層数の半導体チップを積層して実装する実装装置であって、
    　前記基板または下層の半導体チップの上に配置された前記半導体チップを、上側から第一温度で加熱しつつ第一荷重で加圧することで仮圧着するとともに、１以上の半導体チップの積層体であるチップ積層体を、上側から、第一温度より高い第二温度で加熱しつつ第二荷重で加圧することで、前記チップ積層体を構成する１以上の半導体チップを一括で本圧着するボンディング部と、
    　前記ボンディング部を制御する制御部と、
    　を備え、前記制御部は、
    　前記基板の上において、１以上の半導体チップを、順次、前記ボンディング部により仮圧着することで第一チップ積層体を形成する第一積層処理部と、
    　前記第一チップ積層体を構成する前記１以上の半導体チップを前記ボンディング部により一括で本圧着する第一本圧着処理部と、
    　本圧着された半導体チップの上において、２以上の半導体チップを、順次、前記ボンディング部により仮圧着しながら積層することで、第二チップ積層体を形成する第二積層処理部と、
    　前記第二チップ積層体を構成する前記２以上の半導体チップを前記ボンディング部により一括で本圧着する第二本圧着処理部と、
    　を備える、ことを特徴とする実装装置。
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