WO2018059019A1 - 坩埚、蒸镀装置及蒸镀系统 - Google Patents

坩埚、蒸镀装置及蒸镀系统 Download PDF

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Publication number
WO2018059019A1
WO2018059019A1 PCT/CN2017/089355 CN2017089355W WO2018059019A1 WO 2018059019 A1 WO2018059019 A1 WO 2018059019A1 CN 2017089355 W CN2017089355 W CN 2017089355W WO 2018059019 A1 WO2018059019 A1 WO 2018059019A1
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crucible
shape
heating
heating portion
top surface
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PCT/CN2017/089355
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English (en)
French (fr)
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张永峰
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京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US15/580,123 priority Critical patent/US20180298487A1/en
Priority to JP2017563294A priority patent/JP2019534937A/ja
Publication of WO2018059019A1 publication Critical patent/WO2018059019A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material

Definitions

  • the present disclosure relates to the field of evaporation.
  • it relates to a crucible, a vapor deposition apparatus, and an evaporation system.
  • the evaporation process is widely used in the coating production of electronic devices. It provides for placing the raw material in a device such as a crucible, heating the raw material to a certain temperature by a heating source, causing the raw material to evaporate or sublimate, and then depositing on the surface of the substrate to be film-formed to complete the coating.
  • a reactive metal such as Mg or Al having a low work function
  • a mixture of Mg and Ag (9:1) is commonly used to balance various aspects of performance.
  • the Mg metal is very active, it is inevitable to react with the residual O 2 and N 2 in the vapor deposition chamber during the long-term vapor deposition to form a sheet-like "magnesium ash" impurity. As time goes by, more and more, some impurities move with the vapor-deposited Mg radicals to the surface of the glass substrate and attach to the substrate, thereby causing display defects.
  • Embodiments of the present disclosure provide a crucible, an evaporation device, and an evaporation system capable of solving the problem that impurities generated in the evaporation process may contaminate the evaporation chamber and impurities may move to the vapor-deposited substrate along with the vapor-deposited material. The problem.
  • a first aspect of the present disclosure provides a flaw.
  • Said ⁇ includes for accommodating a containment chamber of thermal material, wherein the crucible further includes a collector located in the accommodation chamber, and an opening of the collector faces a top of the accommodation chamber.
  • the crucible further includes a flip cover disposed on the receiving chamber, the flip cover having at least one hole, wherein an area of the top surface of the hole on a side away from the receiving chamber An area smaller than a bottom surface of the hole on a side facing the accommodation chamber.
  • the top surface and the bottom surface have a circular shape, and wherein the top surface has a diameter ranging from 0.5 to 2 mm and the bottom surface has a diameter ranging from 2 to 4 mm.
  • the cross-sectional shape of the aperture in a plane perpendicular to the top surface is an isosceles trapezoidal shape.
  • the crucible further includes a thermally conductive plate disposed at a bottom of the containment chamber.
  • the heat conducting plate is configured to have a honeycomb shape in a cross-sectional shape on a plane parallel to the top surface.
  • the shape of the collector comprises a funnel shape, an ellipsoidal shape or a plate shape.
  • Another object of the present disclosure is to provide an evaporation apparatus.
  • a second aspect of the present disclosure provides an evaporation apparatus comprising a heating source and a crucible as described above, wherein the heating source is for heating the crucible.
  • the heating source is disposed on a side of the crucible, and the heating source includes a first heating portion and a second heating portion disposed along a direction from the bottom of the crucible to the lid, wherein The second heating portion is located above the first heating portion, and wherein the second heating portion is for providing a second heating temperature that is higher than a first heating temperature provided by the first heating portion.
  • Still another object of the present disclosure is to provide an evaporation system.
  • a third aspect of the present disclosure provides an evaporation system comprising the evaporation apparatus as described above.
  • FIG. 1 is a schematic illustration of a crucible in accordance with an embodiment of the present disclosure
  • FIG. 2(a) is a schematic illustration of a crucible in accordance with an embodiment of the present disclosure
  • FIG. 2(b) is a partial enlarged view of a flip cover according to an embodiment of the present disclosure
  • FIG. 3 is a schematic illustration of a crucible in accordance with an embodiment of the present disclosure.
  • FIG. 4 is a top plan view of a thermally conductive plate in accordance with an embodiment of the present disclosure
  • Figure 5 (a) is a schematic illustration of a crucible in accordance with one embodiment of the present disclosure
  • Figure 5 (b) is a schematic illustration of a crucible in accordance with another embodiment of the present disclosure.
  • FIG. 6 is a schematic view of an evaporation device in accordance with an embodiment of the present disclosure.
  • FIG. 7 is a schematic diagram of an evaporation apparatus in accordance with an embodiment of the present disclosure.
  • the terms “upper”, “lower”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom” and The derivative should refer to the public text.
  • the terms “overlay”, “on top of”, “positioned on” or “positioned on top of” mean that a first element, such as a first structure, exists in a second element, such as a second structure. Above, wherein an intermediate element such as an interface structure may exist between the first element and the second element.
  • Terminology “Touch” means connecting a first element such as a first structure and a second element such as a second structure, with or without other elements at the interface of the two elements.
  • FIG. 1 is a schematic illustration of a crucible in accordance with an embodiment of the present disclosure.
  • the crucible includes a housing chamber 1 for accommodating the material to be heated.
  • the crucible also includes a collector 2 located in the containment chamber 1 with the opening 21 of the collector 2 facing the top of the containment chamber 1.
  • the crucible also includes a support device 3 for supporting the collector 2.
  • the support device 3 can be a card slot.
  • the support device 3 is exemplified as a component independent of the collector 2. It will be appreciated that the collector 2 can be supported by itself in the crucible without the need for a special support device 3.
  • the size and specific location of the collector can be set according to actual needs, and the disclosure does not limit this.
  • impurities generated during the evaporation process can be collected by the collector, reducing the accommodation for a vacuum evaporation chamber, for example.
  • the contamination of the chamber and the probability of depositing impurities onto the substrate are reduced, thereby significantly reducing the probability of impurities being deposited on the substrate causing anomalies.
  • the crucible further includes a flip cover 4 disposed on the receiving chamber, and the flip cover has at least one hole 5.
  • the surface of the hole on the side away from the accommodation chamber is defined as a "top surface”
  • the surface of the hole on the side facing the accommodation chamber is defined as a "bottom surface”. It can be seen that the area of the top surface of the aperture 5 is smaller than the area of the bottom surface of the aperture.
  • the hole 5 is an opening having a thin upper portion and a thick lower portion.
  • FIG. 2(b) is a partial enlarged view of a flip cover in accordance with an embodiment of the present disclosure. As can be more clearly seen from Fig. 2(b), the area of the top surface S1 of the hole 5 is smaller than the area of the bottom surface S2 of the hole.
  • the vapor flow and the moving direction of the vapor-deposited material can be stabilized, so that the vapor-deposited material (for example, Mg) can escape more and can restrict impurities.
  • the pores may be set to have a specific size in order to better limit the escape of impurities and promote the escape of the vapor-deposited material in consideration of the size of the impurities and the material to be vapor-deposited.
  • the top and bottom surfaces of the hole may be arranged to have a circular shape and the top surface may be straight
  • the range of the diameter is set to be about 0.5 to 2 mm, and the range of the diameter of the bottom surface is set to about 2-4 mm.
  • the cross-sectional shape of the aperture in a plane perpendicular to the top surface is an isosceles trapezoidal shape.
  • the holes can be conical holes.
  • Such an opening design can limit the undesired material (for example, flake magnesia) from escaping, and can correct the desired direction of movement of the vapor-deposited material (eg, Mg radicals) to cause vaporized material molecules.
  • the direction of motion is as vertical as possible.
  • the crucible further includes a heat conducting plate 6 disposed at the bottom of the containing chamber 1.
  • a heat conducting plate By providing a heat conducting plate, the contact area of the vapor-deposited material such as magnesium and the crucible is increased, so that the vapor-deposited material can be more uniformly heated, and the evaporation rate of the vapor-deposited material can be stabilized, thereby achieving a better vapor deposition effect.
  • the heat conducting plate can also be integrated with the bottom of the crucible.
  • the heat conducting plate in the crucible is configured to have a honeycomb shape in a sectional shape on a plane parallel to the top surface.
  • the honeycomb shape of the heat conducting plate in FIG. 4 includes a plurality of hexagons only for exemplary purposes, and is not intended to limit the honeycomb shape of the heat conducting plate.
  • the honeycomb shape of the heat conducting plate can be set according to actual needs.
  • the honeycomb shape may also include a plurality of circles, quadrangles, pentagons, heptagons, and the like.
  • the shape of the collector is not limited to the funnel shape shown in the above figures, and may include an ellipsoidal shape, a plate shape, and the like, which is not limited in the present disclosure.
  • the shape of the collector can be set to any desired shape as needed.
  • Figure 5 (a) is a schematic illustration of a file in accordance with one embodiment of the present disclosure.
  • Fig. 5(a) is exemplified by the shape of the collector 2 being an ellipsoidal shape. It will be appreciated that the support means 3 for supporting the collector 2 in the crucible is not necessary. The collector can be placed in the crucible without the need for a special support device.
  • FIG. 5(b) is a schematic diagram of a crucible in accordance with another embodiment of the present disclosure.
  • Fig. 5(b) is exemplified by the shape of the collector 2 being a plate shape.
  • the shape of the plate in Fig. 5(b) is merely exemplary, and is not limited to a flat plate shape, and the groove-like structure having an opening also belongs to the "plate shape" herein.
  • Another aspect of the present disclosure also provides an evaporation apparatus comprising the crucible as described above and a heating source for heating the crucible.
  • FIG. 6 is a schematic illustration of an evaporation apparatus in accordance with an embodiment of the present disclosure.
  • the vapor deposition apparatus includes a heat source 7 and a crucible as described above, wherein the heat source is used to heat the crucible.
  • FIG. 7 is a schematic diagram of an evaporation apparatus in accordance with an embodiment of the present disclosure.
  • the heat source of the vapor deposition device is disposed on the side of the crucible, and the heating source includes a first heating portion 71 and a second heating portion 72 disposed along the bottom of the crucible to the lid, wherein the second heating The portion 72 is located above the first heating portion 71.
  • the second heating portion is for providing a second heating temperature that is higher than a first heating temperature provided by the first heating portion.
  • the first heating portion and the second heating portion thus disposed, it is possible to prevent the vapor-deposited material molecules (for example, Mg radicals) from being subjected to a temperature which is slightly lower in temperature, and deposition occurs, resulting in a hole in the lid. Blocked.
  • the vapor-deposited material molecules for example, Mg radicals
  • the heating temperature of the second heating portion may be set to be higher than the heating temperature of the first heating portion, and the difference between the two ranges from about 50 to 100 ° C to better enable evaporation.
  • the material escapes from the containment chamber.
  • the heating temperature range of the first heating portion may be set to about 450 to 500 ° C
  • the heating temperature range of the second heating portion may be set to about 500 to 550 °C.
  • Yet another aspect of the present disclosure also provides an evaporation system including the evaporation apparatus as described above.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)

Abstract

一种坩埚、蒸镀装置及蒸镀系统。所述坩埚包括用于容纳被加热材料的容纳室（1），其中，所述坩埚还包括位于所述容纳室中的收集器（2），且所述收集器（2）的开口（21）朝向所述容纳室（1）的顶部。

Description

坩埚、蒸镀装置及蒸镀系统
相关申请的交叉引用
本申请要求于2016年09月27日递交的中国专利申请第201610850525.3号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开文本涉及蒸镀领域。特别地，涉及一种坩埚、蒸镀装置及蒸镀系统。
背景技术
当前，蒸镀工艺被广泛用于电子器件的镀膜生产中。其提供将原材料放于诸如坩埚的装置中，通过加热源将原材料加热到一定温度，使得原材料发生蒸发或升华，然后沉积在待成膜基板的表面，来完成镀膜。
在OLED器件制备中，需要使用具有低功函数的Mg、Al等活泼金属来制备阴极。为实现阴极与电子注入层材料能级的搭配，提高阴极的导电特性，常用Mg与Ag(9：1)的混合来平衡各方面性能。但是由于Mg金属很活泼，在长时间蒸镀过程中不可避免与蒸镀腔室内残余的O2、N2反应生成片状“镁灰”杂质。随着时间的延长越积越多，部分杂质随蒸镀Mg原子团运动到玻璃基板表面并附到基板上，从而造成显示缺陷。
发明内容
本公开文本的实施例提供了一种坩埚、蒸镀装置及蒸镀系统，能够解决蒸镀过程中产生的杂质会污染蒸镀室以及杂质会随着被蒸镀材料运动到被蒸镀基板上的问题。
本公开文本的一个目的在于提供一种坩埚。
本公开文本的第一方面提供了一种坩埚。所述坩埚包括用于容纳被加 热材料的容纳室，其中，所述坩埚还包括位于所述容纳室中的收集器，且所述收集器的开口朝向所述容纳室的顶部。
在一个实施例中，所述坩埚还包括设置在所述容纳室上的坩埚盖，所述坩埚盖具有至少一个孔，其中，所述孔在远离所述容纳室的一侧的顶表面的面积小于所述孔在朝向所述容纳室的一侧的底表面的面积。
在一个实施例中，所述顶表面和所述底表面具有圆形形状，并且其中，所述顶表面的直径的范围为0.5-2mm，所述底表面的直径的范围为2-4mm。
在一个实施例中，所述孔在垂直于所述顶表面的平面上的的截面形状为等腰梯形形状。
在一个实施例中，所述坩埚进一步包括设置在所述容纳室底部的导热板。
在一个实施例中，所述导热板被配置成在平行于所述顶表面的平面上的截面形状具有蜂窝形状。
在一个实施例中，所述收集器的形状包括漏斗形、椭球形或板形。
本公开文本的另一个目的在于提供一种蒸镀装置。
本公开文本的第二方面提供了一种蒸镀装置，所述蒸镀装置包括加热源和如上所述的坩埚，其中，所述加热源用于对所述坩埚加热。
在一个实施例中，所述加热源被设置在所述坩埚的侧面，且所述加热源包括沿所述坩埚底部到所述坩埚盖的方向设置的第一加热部分和第二加热部分，其中，所述第二加热部分位于所述第一加热部分之上，并且其中，所述第二加热部分用于提供高于所述第一加热部分所提供的第一加热温度的第二加热温度。
本公开文本的又一个目的在于提供一种蒸镀系统。
本公开文本的第三方面提供了一种蒸镀系统，所述蒸镀系统包括如上所述的蒸镀装置。
附图说明
为了更清楚地说明本公开文本的实施例的技术方案，下面将对实施例 的附图进行简要说明，应当知道，以下描述的附图仅仅涉及本公开文本的一些实施例，而非对本公开文本的限制，其中：
图1为根据本公开文本的实施例的坩埚的示意图；
图2(a)为根据本公开文本的实施例的坩埚的示意图；
图2(b)为根据本公开文本的实施例的坩埚盖的局部放大图；
图3为根据本公开文本的实施例的坩埚的示意图；
图4为根据本公开文本的实施例的导热板的俯视示意图；
图5(a)为根据本公开文本的一个实施例的坩埚的示意图；
图5(b)为根据本公开文本的另一个实施例的坩埚的示意图；
图6为根据本公开文本的实施例的蒸镀装置的示意图；
图7为根据本公开文本的实施例的蒸镀装置的示意图。
具体实施方式
为了使本公开文本的实施例的目的、技术方案和优点更加清楚，下面将接合附图，对本公开文本的实施例的技术方案进行清楚、完整的描述。显然，所描述的实施例是本公开文本的一部分实施例，而不是全部的实施例。基于所描述的本公开文本的实施例，本领域技术人员在无需创造性劳动的前提下所获得的所有其他实施例，也都属于本公开文本保护的范围。
当介绍本公开文本的元素及其实施例时，除非上下文中另外明确地指出，否则在本文和所附权利要求中所使用的词语的单数形式包括复数，反之亦然。因而，当提及单数时，通常包括相应术语的复数。用语“包含”、“包括”、“含有”和“具有”旨在包括性的并且表示可以存在除所列要素之外的另外的要素。
出于下文表面描述的目的，如其在附图中被标定方向那样，术语“上”、“下”、“左”、“右”“垂直”、“水平”、“顶”、“底”及其派生词应涉及公开文本。术语“上覆”、“在……顶上”、“定位在……上”或者“定位在……顶上”意味着诸如第一结构的第一要素存在于诸如第二结构的第二要素上，其中，在第一要素和第二要素之间可存在诸如界面结构的中间要素。术语“接 触”意味着连接诸如第一结构的第一要素和诸如第二结构的第二要素，而在两个要素的界面处可以有或者没有其它要素。
图1为根据本公开文本的实施例的坩埚的示意图。如图1所示，坩埚包括用于容纳被加热材料的容纳室1。从图1可以看出，该坩埚还包括位于容纳室1中的收集器2，且收集器2的开口21朝向容纳室1的顶部。可选地，坩埚还包括用来支撑收集器2的支撑装置3。支撑装置3可以为卡槽。这里以支撑装置3为独立于收集器2的部件为示例。可以理解的是，收集器2可以自身支撑于坩埚中，而无需专门的支撑装置3。收集器的大小和具体位置可以根据实际需要来设定，本公开文本对此不做限制。
通过设置在坩埚的容纳室中的收集器，且收集器的开口朝向所述容纳室的顶部，使得蒸镀过程中生成的杂质能够被收集器所收集，减少了对诸如真空蒸镀腔的容纳室的污染，并且减少了杂质沉积到基板上的机率，从而能显著降低杂质沉积到基板上造成异常的概率。
图2(a)为根据本公开文本的实施例的坩埚的示意图。如图2(a)所示，坩埚还包括设置在所述容纳室上的坩埚盖4，并且所述坩埚盖具有至少一个孔5。这里，将孔在远离容纳室的一侧的表面定义为“顶表面”，将孔在朝向所述容纳室的一侧的表面定义为“底表面”。可以看出，孔5的顶表面的面积小于所述孔的底表面的面积。换而言之，孔5为上部细、下部粗的开口。
图2(b)为根据本公开文本的实施例的坩埚盖的局部放大图。从图2(b)可以更清楚地看出，孔5的顶表面S1的面积小于所述孔的底表面S2的面积。
通过这样的设置在坩埚盖中的孔，可以稳定被蒸镀材料(例如，Mg)的蒸汽流及运动方向，使得被蒸镀的材料(例如，Mg)能够逸出更多，并且能够限制杂质(例如，包括氧化镁和/或氮化镁的“镁灰”)的逸出。在
在一个实施例中，考虑到杂质和被蒸镀材料的尺寸，为了更好的限制杂质的逸出和促进被蒸镀材料的逸出，可以将孔设置为具有特定尺寸。例如，可以将孔的顶表面和底表面设置为具有圆形形状，并且将顶表面的直 径的范围设定为约0.5-2mm，将底表面的直径的范围设定为约2-4mm。
一个实施例中，孔在垂直于顶表面的平面上的截面形状为等腰梯形形状。孔可以为圆锥形孔。这样开口的设计能够限制不希望的材料(例如，片状镁灰)逸出坩埚外，又能校正所希望的被蒸镀材料(例如，Mg原子团)分子的运动方向，使被蒸镀材料分子的运动方向尽量垂直向上。
图3为根据本公开文本的实施例的坩埚的示意图。如图3所示，坩埚进一步包括设置在容纳室1底部的导热板6。通过设置导热板，增加了诸如镁等的被蒸镀材料与坩埚的接触面积，可以使得被蒸镀材料受热更均匀，稳定被蒸镀材料的蒸发速率，实现更好的蒸镀效果。导热板也可以与坩埚的底部为一体结构。
图4为根据本公开文本的实施例的导热板的俯视示意图。从图4中可以看出，在坩埚中的导热板被配置成在平行于顶表面的平面上的截面形状具有蜂窝形状。需要说明，图4中导热板的蜂窝形状包括多个六边形仅仅为示例性的，而非用以限制导热板的蜂窝形状。可以根据实际需要来设置导热板的蜂窝形状。例如，蜂窝形状也可以包括多个圆形、四边形、五边形、七边形等等。
收集器的形状不仅仅限制于上述图中所示出的漏斗形，也可以包括椭球形、板形等等，本公开文本对此不做限制。可以根据需要，将收集器的形状设置为任何期望的形状。
图5(a)为根据本公开文本的一个实施例的坩埚的示意图。图5(a)以收集器2的形状为椭球形为示例。可以理解的是，用于将收集器2支撑在坩埚中的支撑装置3不是必须的。收集器可以被放置于坩埚中，而无需专门的支撑装置。
图5(b)为根据本公开文本的另一个实施例的坩埚的示意图。图5(b)以收集器2的形状为板形为示例。图5(b)中的板形仅仅为示例性的，并非限制于平面板状，具有开口的凹槽状结构也属于本文中的“板形”。
本公开文本的另一方面还提供了一种蒸镀装置，该蒸镀装置包括如上所述的坩埚和用于对坩埚进行加热的加热源。
图6为根据本公开文本的实施例的蒸镀装置的示意图。如图6所示，该蒸镀装置包括加热源7和如上所述的坩埚，其中，加热源用于对坩埚进行加热。
图7为根据本公开文本的实施例的蒸镀装置的示意图。如图7所示，蒸镀装置的加热源被设置在坩埚的侧面，且加热源包括沿坩埚底部到坩埚盖的方向设置的第一加热部分71和第二加热部分72，其中，第二加热部分72位于第一加热部分71之上。第二加热部分用于提供高于第一加热部分所提供的第一加热温度的第二加热温度。通过这样设置的第一加热部分和第二加热部分，这样能够避免温度较高的被蒸镀材料分子(例如，Mg原子团)遇到温度略低的坩埚盖，而发生沉积，导致坩埚盖的孔堵塞。
在实际工作中，可以将第二加热部分的加热温度设置为高于所述第一加热部分的加热温度，且两者的差值范围为约50-100℃，以更好地使得被蒸镀材料从容纳室逸出。例如，对于被蒸镀材料包括镁的情况，可以将第一加热部分的加热温度范围设置为约450-500℃，第二加热部分的加热温度范围设置为约500-550℃。
本公开文本的又一方面还提供了一种蒸镀系统，该蒸镀系统包括如上所述的蒸镀装置。
已经描述了某特定实施例，这些实施例仅通过举例的方式展现，而且不旨在限制本公开文本的范围。事实上，本文所描述的新颖实施例可以以各种其它形式来实施；此外，可在不脱离本公开文本的精神下，做出以本文所描述的实施例的形式的各种省略、替代和改变。所附权利要求以及它们的等价物旨在覆盖落在本公开文本范围和精神内的此类形式或者修改。

Claims (10)

  1. 一种坩埚，包括用于容纳被加热材料的容纳室，其中，所述坩埚还包括位于所述容纳室中的收集器，且所述收集器的开口朝向所述容纳室的顶部。
  2. 根据权利要求1所述的坩埚，其中，所述坩埚还包括设置在所述容纳室上的坩埚盖，所述坩埚盖具有至少一个孔，其中，所述孔在远离所述容纳室的一侧的顶表面的面积小于所述孔在朝向所述容纳室的一侧的底表面的面积。
  3. 根据权利要求2所述的坩埚，其中，所述顶表面和所述底表面具有圆形形状，并且其中，所述顶表面的的直径范围为0.5-2mm，所述底表面的直径的范围为2-4mm。
  4. 根据权利要求3所述的坩埚，其中，所述孔在垂直于所述顶表面的平面上的截面形状为等腰梯形形状。
  5. 根据权利要求2所述的坩埚，其中，所述坩埚进一步包括设置在所述容纳室底部的导热板。
  6. 根据权利要求5所述的坩埚，其中，所述导热板被配置成在平行于所述顶表面的平面上的截面形状具有蜂窝形状。
  7. 根据权利要求1-6中任一项所述的坩埚，其中，所述收集器的形状包括漏斗形、椭球形或板形。
  8. 一种蒸镀装置，其中，所述蒸镀装置包括加热源和根据权利要求1-7中任一项所述的坩埚，其中，所述加热源用于对所述坩埚加热。
  9. 根据权利要求8所述的蒸镀装置，其中，所述加热源被设置在所述坩埚的侧面，且所述加热源包括沿所述坩埚底部到所述坩埚盖的方向设置的第一加热部分和第二加热部分，其中，所述第二加热部分位于所述第一加热部分之上，并且其中，
    所述第二加热部分用于提供高于所述第一加热部分所提供的第一加热温度的第二加热温度。
  10. 一种蒸镀系统，其中，所述蒸镀系统包括根据权利要求8或9所 述的蒸镀装置。
PCT/CN2017/089355 2016-09-27 2017-06-21 坩埚、蒸镀装置及蒸镀系统 WO2018059019A1 (zh)

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CN106191785B (zh) * 2016-09-27 2018-09-18 京东方科技集团股份有限公司 坩埚、蒸镀装置及蒸镀系统
CN109722633B (zh) * 2017-10-31 2021-07-06 上海和辉光电股份有限公司 一种坩埚及蒸镀装置
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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990012485A2 (en) * 1989-04-21 1990-11-01 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Multiple source evaporation for alloy production
CN102605194A (zh) * 2012-03-16 2012-07-25 葫芦岛锌业股份有限公司 一种真空蒸馏制备高纯锌的方法
CN203451609U (zh) * 2013-09-26 2014-02-26 京东方科技集团股份有限公司 一种蒸镀坩埚
CN203582959U (zh) * 2013-12-06 2014-05-07 京东方科技集团股份有限公司 一种蒸镀装置
CN104018122A (zh) * 2014-06-10 2014-09-03 京东方科技集团股份有限公司 一种收集装置
WO2015129091A1 (ja) * 2014-02-27 2015-09-03 日立アロカメディカル株式会社 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法
CN105755432A (zh) * 2016-04-13 2016-07-13 京东方科技集团股份有限公司 一种蒸镀罩和蒸镀设备
CN106191785A (zh) * 2016-09-27 2016-12-07 京东方科技集团股份有限公司 坩埚、蒸镀装置及蒸镀系统

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6237529B1 (en) * 2000-03-03 2001-05-29 Eastman Kodak Company Source for thermal physical vapor deposition of organic electroluminescent layers

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990012485A2 (en) * 1989-04-21 1990-11-01 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Multiple source evaporation for alloy production
CN102605194A (zh) * 2012-03-16 2012-07-25 葫芦岛锌业股份有限公司 一种真空蒸馏制备高纯锌的方法
CN203451609U (zh) * 2013-09-26 2014-02-26 京东方科技集团股份有限公司 一种蒸镀坩埚
CN203582959U (zh) * 2013-12-06 2014-05-07 京东方科技集团股份有限公司 一种蒸镀装置
WO2015129091A1 (ja) * 2014-02-27 2015-09-03 日立アロカメディカル株式会社 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法
CN104018122A (zh) * 2014-06-10 2014-09-03 京东方科技集团股份有限公司 一种收集装置
CN105755432A (zh) * 2016-04-13 2016-07-13 京东方科技集团股份有限公司 一种蒸镀罩和蒸镀设备
CN106191785A (zh) * 2016-09-27 2016-12-07 京东方科技集团股份有限公司 坩埚、蒸镀装置及蒸镀系统

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