WO2018037982A1 - 基板処理装置および基板処理方法 - Google Patents

基板処理装置および基板処理方法 Download PDF

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Publication number
WO2018037982A1
WO2018037982A1 PCT/JP2017/029466 JP2017029466W WO2018037982A1 WO 2018037982 A1 WO2018037982 A1 WO 2018037982A1 JP 2017029466 W JP2017029466 W JP 2017029466W WO 2018037982 A1 WO2018037982 A1 WO 2018037982A1
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WIPO (PCT)
Prior art keywords
substrate
guard
unit
upper position
liquid
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PCT/JP2017/029466
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English (en)
French (fr)
Japanese (ja)
Inventor
昌之 林
敬次 岩田
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Priority to CN201780047398.6A priority Critical patent/CN109564862B/zh
Priority to KR1020197002420A priority patent/KR102208292B1/ko
Priority to KR1020217001696A priority patent/KR102262348B1/ko
Publication of WO2018037982A1 publication Critical patent/WO2018037982A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate using a chemical solution.
  • the substrate include a semiconductor substrate, a liquid crystal display substrate, a plasma display substrate, an FED (Field ⁇ EmissionFDisplay) substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, Ceramic substrates, solar cell substrates and the like are included.
  • a single wafer processing apparatus for processing substrates one by one may be used to perform processing with a chemical on the surface of a substrate such as a semiconductor substrate.
  • This single-wafer type substrate processing apparatus includes, for example, a spin chuck that rotates while holding the substrate substantially horizontal in a chamber, a nozzle for supplying a chemical to the substrate rotated by the spin chuck, and a substrate. It includes a processing cup for receiving and draining the scattered processing liquid, and a disc-shaped blocking plate disposed to face the surface (upper surface) of the substrate held by the spin chuck.
  • the processing cup has, for example, a substantially cylindrical shape with the rotation axis of the substrate by the spin chuck as the central axis, and an opening (upper opening) is provided at the upper end thereof.
  • the processing cup includes a cup accommodated in a fixed manner and a guard that can be moved up and down with respect to the cup and that can catch a chemical liquid scattered from a substrate rotated by a spin chuck.
  • a guard that can be moved up and down with respect to the cup and that can catch a chemical liquid scattered from a substrate rotated by a spin chuck.
  • at least the height position of the outermost guard is set to a predetermined liquid receiving position where the chemical liquid splashing from the substrate can be received by the guard.
  • the chemical solution is supplied to the surface of the substrate by supplying the chemical solution from the nozzle to the surface of the substrate.
  • the chemical solution supplied to the surface of the substrate receives a centrifugal force due to the rotation of the substrate and scatters laterally from the peripheral edge of the substrate.
  • medical solution which scattered to the side is received by the guard, is supplied to a cup along the inner wall of a guard, and is drained after that.
  • the processing cup is Even if the inside is evacuated by the exhaust mechanism, the atmosphere containing the chemical mist or the like inside the processing cup may flow out of the processing cup through the upper opening of the processing cup and diffuse into the chamber. .
  • the atmosphere containing chemical mist, etc. becomes particles and adheres to the substrate, contaminating the substrate, and contaminating the inner wall of the chamber. Or it is desirable to prevent.
  • an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of suppressing the diffusion of the atmosphere containing the chemical solution supplied to the main surface of the substrate to the surroundings.
  • the present invention includes a chamber, a substrate holding unit that is accommodated in the chamber and holds the substrate in a horizontal posture, a rotation unit that rotates the substrate held by the substrate holding unit around a vertical rotation axis, A nozzle for discharging liquid from the discharge port toward the main surface of the substrate that has a discharge port and is held by the rotating unit, and a first for supplying a first chemical to the nozzle
  • a plurality of cylindrical guards including a chemical solution supply unit, a cylindrical first guard surrounding the periphery of the substrate holding unit, and a cylindrical second guard surrounding the periphery of the first guard;
  • a processing cup for accommodating the substrate holding unit; an elevating unit for elevating and lowering at least one of the plurality of guards; the rotating unit; and the first chemical solution supply unit.
  • a control device for controlling the lifting unit, wherein the control device is configured to remove at least one of the plurality of guards from a substrate at a predetermined upper position and rotated by the rotating unit.
  • An upper position arrangement that is set above a predetermined liquid receiving position where the first chemical liquid to be scattered can be received by the guard, and is arranged at an upper position where the liquid scattered from the substrate can be received by the guard.
  • a processing device is provided.
  • the first chemical liquid is disposed on the main surface of the substrate in the rotating state in a state where at least one of the plurality of guards is disposed at the upper position set higher than the liquid receiving position. Is supplied. In a state where at least one of the plurality of guards is disposed at the upper position, a large distance is ensured between the upper opening of the processing cup and the substrate.
  • mist of the chemical solution is generated by supplying the first chemical solution to the substrate.
  • the chemical solution It is difficult for the atmosphere containing the mist to flow out of the processing cup through the upper opening of the processing cup.
  • the substrate processing apparatus which can suppress the spreading
  • a facing member that has a substrate facing surface facing upward with respect to the upper surface of the substrate held by the substrate holding unit, and is disposed above the guard, It further includes an opposing member that forms an annular gap with the upper end of the guard in a state where the guard is disposed at the upper position.
  • the atmosphere in the processing cup in order for the atmosphere inside the processing cup to flow out into the chamber, the atmosphere in the processing cup not only flows out of the processing cup through the upper opening, but is further arranged at the upper position. It is necessary to reach the inside of the chamber through an annular gap between the upper end of the guard in the state of being placed and the substrate facing surface. In this case, by setting the upper position of the guard so that the annular gap is narrowed, the amount of atmosphere flowing out into the chamber through the annular gap can be effectively suppressed or prevented.
  • the apparatus holds the nozzle and moves around the predetermined swing axis set outside the rotation range of the substrate so as to move the nozzle along the main surface of the substrate held by the substrate holding unit. It may further include a nozzle arm provided to be swingable. In this case, the annular gap may be set larger than the vertical width of the nozzle arm so that the nozzle arm can straddle the inside and outside of the rotation range.
  • the nozzle arm can be straddled inside and outside the rotation range while passing through the annular gap. Then, by making the annular gap as small as possible, the annular gap can be set to a minimum size within a range that allows passage of the nozzle arm. In this case, the amount of atmosphere flowing out from the inside of the processing cup to the inside of the chamber can be effectively reduced. Thereby, the spreading
  • the substrate processing apparatus holds the nozzle, and moves the nozzle along a main surface of the substrate held by the substrate holding unit. It may further include a nozzle arm provided so as to be swingable around the movement axis. In this case, the first position between the upper end of the guard and the lower end of the nozzle arm in a state where the upper position is located is between the lower end of the nozzle arm and the discharge port. The position may be narrower than the second interval.
  • the upper end of the guard in the upper position is higher than the intermediate position between the lower end of the nozzle arm and the main surface of the substrate held by the substrate holding unit.
  • the position may be a position.
  • the amount of the atmosphere flowing out from the processing cup into the chamber can be effectively reduced by setting the upper position to the position as described above. Thereby, the spreading
  • medical solution can be suppressed much more effectively.
  • the apparatus may further include a second chemical solution supply unit for supplying a second chemical solution different in type from the first chemical solution to the main surface of the substrate.
  • the control device further controls the second chemical solution supply unit, and the control device lowers the upper end of the first guard from the substrate held by the substrate holding unit.
  • a second chemical supply step for supplying a second chemical to the main surface of the substrate while rotating the substrate by the rotating unit.
  • the second chemical liquid supply step is executed in a state where the first guard is disposed at the lower position and the second guard is disposed at the liquid receiving position. Therefore, in the second chemical solution supply step, the second chemical solution scattered from the substrate can be satisfactorily received by the second guard at the liquid receiving position.
  • the control device may execute the step of arranging the first and second guards at the upper position as the upper position arranging step.
  • the first chemical solution supply step is executed in a state where the first and second guards are arranged at the upper position. Therefore, in the first chemical liquid supply step, the first chemical liquid scattered from the substrate can be satisfactorily received by the first guard while arranging the first guard as high as possible. Thereby, in the 1st chemical
  • the apparatus may further include a water supply unit for supplying water to the nozzle.
  • the control device may further control the water supply unit.
  • the control device includes the step of disposing the first and second guards at the liquid receiving position, and the rotating unit by the rotating unit in a state where the first and second guards are disposed at the liquid receiving position. You may further perform the water supply process which supplies water to the main surface of the said board
  • the water supply step is executed in a state where the first and second guards are arranged at the liquid receiving position. Therefore, in the water supply step, water scattered from the substrate can be received well by the first guard at the liquid receiving position.
  • the control device may execute a step of arranging the first guard at the liquid receiving position and arranging the second guard at the upper position as the upper position arranging step.
  • the first chemical liquid supply step is executed in a state where the first guard is disposed at the liquid receiving position and the second guard is disposed at the upper position.
  • the second guard By disposing the second guard in the upper position as high as possible, it is possible to suppress the mist of the first chemical liquid from flowing out of the processing cup. Therefore, in the first chemical solution supply step, the first chemical solution scattered from the substrate is received by the first guard at the liquid receiving position, and the outflow of the atmosphere containing the mist of the first chemical solution to the outside of the processing cup is prevented. Can be suppressed.
  • medical solution can be suppressed more effectively.
  • the apparatus may further include a water supply unit for supplying water to the nozzle.
  • the control device may further control the water supply unit.
  • the control device arranges the first guard at a lower position where an upper end of the first guard is located below the substrate held by the substrate holding unit, and arranges the second guard at the liquid receiving position. And a main unit of the substrate while rotating the substrate by the rotating unit in a state where the first guard is disposed at the lower position and the second guard is disposed at the liquid receiving position. You may further perform the water supply process which supplies water to a surface.
  • the water supply step is executed in a state where the first guard is disposed at the lower position and the second guard is disposed at the liquid receiving position. Therefore, in the water supply process, the water scattered from the substrate can be received well by the second guard at the liquid receiving position.
  • the first guard In the first chemical supply process, the first guard is disposed at the liquid receiving position and the second guard is disposed at the upper position. Therefore, after the first chemical supply process, the first guard and the second guard are disposed. There is a possibility that the mist of the first chemical solution is attached to the wall of the internal space partitioned between the two guards.
  • the water can be supplied to the internal space defined between the first guard and the second guard. Therefore, even if the mist of the 1st chemical
  • the control device executes the water supply step before and / or after the execution of the first chemical solution supply step and / or before and / or after the execution of the second chemical solution supply step. Also good.
  • the first and second chemical liquid supply steps using different types of chemical liquids are performed in a common chamber. Further, the water supply process is executed before and / or after the first chemical liquid supply process and / or before and / or after the second chemical liquid supply process.
  • the mist of the first chemical solution is formed on the wall of the internal space defined between the first guard and the second guard. May adhere.
  • water can be supplied to the internal space by performing the water supply step after the end of the first chemical solution supply step and / or before the start of the second chemical solution supply step.
  • medical solution adhering to the wall can be washed away. Therefore, at the start of the second chemical liquid supply process, no mist of the first chemical liquid remains on the wall of the internal space. Therefore, even if the second chemical liquid enters the internal space in the second chemical liquid supply step, the second chemical liquid does not come into contact with the first chemical liquid. Thereby, the contact with the 1st chemical
  • the apparatus may include a partition plate that vertically divides a side region of the substrate holding unit into an upper space on the upper side and a lower space on the lower side in the chamber.
  • an exhaust port is opened in the lower space, and a gap may be formed between the second guard and the partition plate.
  • the second guard may have a closing portion for closing the gap. Further, in a state where the second guard is disposed at the upper position, the closing portion closes the gap, and the second guard is set below the upper position.
  • the said clearance gap may be formed in the state arrange
  • the first chemical solution may include a mixed solution of sulfuric acid and hydrogen peroxide solution.
  • the present invention includes a chamber, a substrate holding unit that is accommodated in the chamber and holds the substrate in a horizontal posture, a rotation unit that rotates the substrate held by the substrate holding unit around a vertical rotation axis, Substrate processing performed in a substrate processing apparatus including a cylindrical first guard surrounding the periphery of the substrate holding unit and a plurality of guards including a cylindrical second guard surrounding the periphery of the first guard A substrate holding step of holding the substrate by the substrate holding unit; and at least one of the plurality of guards is scattered from the substrate at a predetermined upper position and rotated by the rotating unit.
  • a substrate processing method including a first chemical supply step for supplying a chemical.
  • the substrate is rotated and at least one of the plurality of guards is disposed at the upper position set above the liquid receiving position, and the first surface is provided on the main surface of the substrate.
  • the chemical solution is supplied.
  • mist of the chemical solution is generated by supplying the first chemical solution to the substrate.
  • the substrate processing method which can suppress the spreading
  • the first guard in the method, is disposed at a lower position where an upper end of the first guard is positioned lower than a substrate held by the substrate holding unit, and the second guard is disposed.
  • the substrate In the liquid receiving position, and in the state where the first guard is arranged at the lower position and the second guard is arranged at the liquid receiving position, the substrate is moved by the rotating unit.
  • the second chemical liquid supply step is executed in a state where the first guard is disposed at the lower position and the second guard is disposed at the liquid receiving position. Therefore, in the second chemical solution supply step, the second chemical solution scattered from the substrate can be satisfactorily received by the second guard at the liquid receiving position.
  • the upper position arranging step may include a step of arranging the first and second guards at the upper position.
  • the first chemical solution supply step is executed in a state where the first and second guards are arranged at the upper position. Therefore, in the first chemical liquid supply step, the first chemical liquid scattered from the substrate can be satisfactorily received by the first guard while arranging the first guard as high as possible. Thereby, in the 1st chemical
  • the method includes the steps of disposing the first and second guards at the liquid receiving position, and the substrate by the rotating unit in a state where the first and second guards are disposed at the liquid receiving position.
  • the water supply step is executed in a state where the first and second guards are arranged at the liquid receiving position. Therefore, in the water supply step, water scattered from the substrate can be received well by the first guard at the liquid receiving position.
  • the upper position arranging step may include a step of arranging the first guard at the liquid receiving position and arranging the second guard at the upper position.
  • the first chemical liquid supply step is executed in a state where the first guard is disposed at the liquid receiving position and the second guard is disposed at the upper position.
  • the second guard By disposing the second guard in the upper position as high as possible, it is possible to suppress the mist of the first chemical liquid from flowing out of the processing cup. Therefore, in the first chemical solution supply step, the first chemical solution scattered from the substrate is received by the first guard at the liquid receiving position, and the outflow of the atmosphere containing the mist of the first chemical solution to the outside of the processing cup is prevented. Can be suppressed.
  • medical solution can be suppressed more effectively.
  • the method includes the steps of disposing the first and second guards at the liquid receiving position, and lowering the upper end of the first guard below the substrate held by the substrate holding unit. Disposing the second guard at the liquid receiving position, the first guard disposed at the lower position, and the second guard disposed at the liquid receiving position. And a water supply step of supplying water to the main surface of the substrate while rotating the substrate by the rotating unit.
  • the water supply step is executed in a state where the first guard is disposed at the lower position and the second guard is disposed at the liquid receiving position. Therefore, in the water supply process, the water scattered from the substrate can be received well by the second guard at the liquid receiving position.
  • the first guard In the first chemical supply process, the first guard is disposed at the liquid receiving position and the second guard is disposed at the upper position. Therefore, after the first chemical supply process, the first guard and the second guard are disposed. There is a possibility that the mist of the first chemical solution is attached to the wall of the internal space partitioned between the two guards.
  • the water can be supplied to the internal space defined between the first guard and the second guard. Therefore, even if the mist of the 1st chemical
  • the water supply step may be executed before and / or after the execution of the first chemical solution supply step and / or before and / or after the execution of the second chemical solution supply step.
  • the first and second chemical liquid supply steps using different types of chemical liquids are performed in a common chamber. Further, the water supply process is executed before and / or after the first chemical liquid supply process and / or before and / or after the second chemical liquid supply process.
  • the mist of the first chemical solution is formed on the wall of the internal space defined between the first guard and the second guard. May adhere.
  • water can be supplied to the internal space by performing the water supply step after the end of the first chemical solution supply step and / or before the start of the second chemical solution supply step.
  • medical solution adhering to the wall can be washed away. Therefore, at the start of the second chemical liquid supply process, no mist of the first chemical liquid remains on the wall of the internal space. Therefore, even if the second chemical liquid enters the internal space in the second chemical liquid supply step, the second chemical liquid does not come into contact with the first chemical liquid. Thereby, the contact with the 1st chemical
  • FIG. 1 is an illustrative plan view for explaining an internal layout of a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 2A is a schematic cross-sectional view for explaining a configuration example of a processing unit provided in the substrate processing apparatus.
  • FIG. 2B is a diagram for specifically explaining a configuration around a counter member included in the processing unit.
  • FIG. 3A is an illustrative view for describing the flow of airflow inside the chamber in a state where the second guard shown in FIG. 2A is in the lower position.
  • FIG. 3B is an illustrative view for explaining the flow of airflow inside the chamber in a state where the second guard is in the liquid receiving position.
  • FIG. 3A is an illustrative view for describing the flow of airflow inside the chamber in a state where the second guard shown in FIG. 2A is in the lower position.
  • FIG. 3B is an illustrative view for explaining the flow of airflow inside the chamber in a state where the second guard is
  • FIG. 3C is an illustrative view for explaining the flow of airflow inside the chamber in a state where the second guard is in the upper position.
  • FIG. 4 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus.
  • FIG. 5 is a flowchart for explaining a first substrate processing example by the processing unit.
  • 6A-6B are schematic diagrams for explaining the first substrate processing example.
  • FIG. 6C-6D are schematic diagrams for explaining the process subsequent to FIG. 6B.
  • FIG. 6E is an illustrative view for describing a step following FIG. 6D.
  • FIG. 7 is an illustrative sectional view showing an enlarged configuration example of the lower part of the processing unit.
  • 8A-8B are illustrative views for explaining a second substrate processing example by the processing unit.
  • FIG. 8C is an illustrative view for explaining a second substrate processing example by the processing unit.
  • FIG. 1 is an illustrative plan view for explaining an internal layout of a substrate processing apparatus 1 according to an embodiment of the present invention.
  • the substrate processing apparatus 1 is a single wafer processing apparatus that processes substrates W such as silicon wafers one by one.
  • the substrate W is a disk-shaped substrate.
  • the substrate processing apparatus 1 includes a plurality of processing units 2 that process a substrate W with a processing liquid, a load port LP on which a carrier C that houses a plurality of substrates W processed by the processing unit 2 is placed, a load port It includes transfer robots IR and CR that transfer the substrate W between the LP and the processing unit 2, and a control device 3 that controls the substrate processing apparatus 1.
  • the transfer robot IR transfers the substrate W between the carrier C and the substrate transfer robot CR.
  • the substrate transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2.
  • the plurality of processing units 2 have the same configuration, for example.
  • FIG. 2A is a schematic cross-sectional view for explaining a configuration example of the processing unit 2.
  • the processing unit 2 includes a box-shaped chamber 4 and a spin chuck that holds a single substrate W in the chamber 4 in a horizontal posture and rotates the substrate W about a vertical rotation axis A1 passing through the center of the substrate W.
  • (Substrate holding unit) 5 an opposing member 7 having a substrate facing surface 6 facing the upper surface (main surface) of the substrate W held by the spin chuck 5, and a substrate W held by the spin chuck 5,
  • SPM supply unit (first chemical supply unit) 8 for supplying a sulfuric acid / hydrogen peroxide / mixture (SPM) as a first chemical solution and a spin chuck 5
  • Organic for supplying an isopropyl alcohol (IPA) liquid as an example of an organic solvent (an organic solvent having a low surface tension) as the second chemical liquid to the surface (upper surface) of the substrate W
  • An agent supply unit (second chemical supply unit) 10 a water supply unit 11 for supplying water as a rinsing liquid to the surface (upper surface) of the substrate W
  • the chamber 4 includes a box-shaped partition wall 13 that accommodates the spin chuck 5 and the nozzles, and an FFU (fan filter filter) as a blower unit that sends clean air (air filtered by a filter) into the partition wall 13 from above the partition wall 13.
  • Unit 14 and a partition plate 16 that vertically divides the side region 15 of the processing cup 12 in the chamber 4 into an upper region 15a and a lower region 15b.
  • the FFU 14 is disposed above the partition wall 13 and attached to the ceiling of the partition wall 13.
  • the control device 3 controls the FFU 14 so that the FFU 14 sends clean air downward from the ceiling of the partition wall 13 into the chamber 4.
  • An exhaust port 9 is opened at the bottom or bottom of the partition wall 13.
  • An exhaust duct 9 a is connected to the exhaust port 9. The exhaust device sucks the atmosphere of the lower space 4a inside the chamber 4 (the space below the partition plate 16 in the vertical direction in the internal space of the chamber 4) and exhausts the lower space 4a.
  • the exhaust device exhausts the lower space 4 a of the chamber 4, whereby a downflow (downflow) is formed in the chamber 4.
  • the processing of the substrate W is performed in a state where a down flow is formed in the chamber 4.
  • the partition plate 16 is disposed between the outer wall of the processing cup 12 and the partition wall 13 (side partition wall) of the chamber 4.
  • the inner end portion of the partition plate 16 is disposed along the outer peripheral surface of the outer wall of the processing cup 12.
  • the outer end portion of the partition plate 16 is disposed along the inner surface of the partition wall 13 (side partition wall) of the chamber 4.
  • An SPM nozzle 28 and a nozzle arm 29 described later are disposed above the partition plate 16.
  • the partition plate 16 may be a single plate or a plurality of plates disposed at the same height.
  • the upper surface of the partition plate 16 may be horizontal or may extend obliquely upward toward the rotation axis A1.
  • the spin chuck 5 As the spin chuck 5, a clamping chuck that holds the substrate W horizontally with the substrate W held in the horizontal direction is employed. Specifically, the spin chuck 5 is mounted substantially horizontally on a spin motor (rotary unit) 17, a lower spin shaft 18 integrated with a drive shaft of the spin motor 17, and an upper end of the lower spin shaft 18. Disc-shaped spin base 19.
  • the spin base 19 has an upper surface 19a made of a flat surface.
  • a plurality of (three or more, for example, six) clamping members 20 are arranged on the peripheral edge thereof.
  • the plurality of clamping members 20 are arranged at appropriate intervals on the circumference corresponding to the outer peripheral shape of the substrate W at the peripheral edge of the upper surface of the spin base 19.
  • the spin chuck 5 is not limited to a sandwich type, and for example, the substrate W is held in a horizontal posture by vacuum-sucking the back surface of the substrate W, and further rotated around a vertical rotation axis in that state.
  • a vacuum suction type vacuum chuck
  • the substrate W held on the spin chuck 5 may be employed.
  • the facing member 7 includes a blocking plate 21 and an upper spin shaft 22 provided coaxially with the blocking plate 21.
  • the blocking plate 21 has a disc shape having a diameter substantially equal to or larger than that of the substrate W.
  • the substrate facing surface 6 forms a lower surface of the blocking plate 21 and has a circular shape facing the entire upper surface of the substrate W.
  • a cylindrical through hole 23 penetrating the blocking plate 21 and the upper spin shaft 22 up and down is formed at the center of the substrate facing surface 6.
  • the inner peripheral wall of the through hole 23 is partitioned by a cylindrical surface.
  • a first nozzle 24 and a second nozzle 25 extending vertically are inserted through the through hole 23.
  • the upper spin shaft 22 is coupled with a blocking plate rotating unit 26.
  • the shielding plate rotating unit 26 rotates the upper spin shaft 22 around the rotational axis A2 together with the shielding plate 21.
  • a shield plate lifting / lowering unit 27 having a configuration including an electric motor, a ball screw, and the like is coupled to the shield plate 21.
  • the blocking plate lifting / lowering unit 27 moves the blocking plate 21 in the vertical direction together with the first and second nozzles 24 and 25.
  • the shield plate lifting / lowering unit 27 includes a proximity position (see FIG. 6D and the like) in which the substrate facing surface 6 of the shield plate 21 is close to the upper surface of the substrate W held by the spin chuck 5 and a retreat provided above the proximity position.
  • the blocking plate 21 and the first and second nozzles 24, 25 are moved up and down between positions (see FIG. 2A, FIG. 6A, etc.).
  • the shield plate lifting / lowering unit 27 can hold the shield plate 21 at each position between the proximity position and the retracted position.
  • the SPM supply unit 8 includes an SPM nozzle (nozzle) 28, a nozzle arm 29 to which the SPM nozzle 28 is attached at the tip, an SPM pipe 30 connected to the SPM nozzle 28, and an SPM interposed in the SPM pipe 30.
  • the valve 31 includes a nozzle moving unit 32 that is connected to the nozzle arm 29 and moves the SPM nozzle 28 by swinging the nozzle arm 29 around the swing axis A3.
  • the nozzle moving unit 32 includes a motor and the like.
  • the SPM nozzle 28 is, for example, a straight nozzle that discharges liquid in a continuous flow state.
  • the discharge port 28a is formed in the outer peripheral surface of the body of the SPM nozzle 28, and SPM is discharged from the discharge port 28a sideways.
  • a configuration may be employed in which a discharge port is formed at the lower end of the body of the SPM nozzle 28 and SPM is discharged downward from the discharge port 28a.
  • the SPM pipe 30 is supplied with a sulfuric acid hydrogen peroxide solution mixture (sulfuric acid / hydrogen peroxide mixture: SPM) from a sulfuric acid hydrogen peroxide supply source.
  • SPM sulfuric acid hydrogen peroxide solution mixture
  • the SPM supplied to the SPM pipe 30 is at a high temperature (eg, about 170 ° C. to about 180 ° C.).
  • the SPM that has been heated to the high temperature by the heat of reaction between sulfuric acid and hydrogen peroxide is supplied to the SPM pipe 30.
  • the SPM valve 31 When the SPM valve 31 is opened, the high-temperature SPM supplied from the SPM pipe 30 to the SPM nozzle 28 is discharged from the discharge port 28a of the SPM nozzle 28.
  • the SPM valve 31 When the SPM valve 31 is closed, high temperature SPM discharge from the SPM nozzle 28 is stopped.
  • the nozzle moving unit 32 is located between the processing position where the high temperature SPM discharged from the SPM nozzle 28 is supplied to the upper surface of the substrate W and the retreat position where the SPM nozzle 28 retreats to the side of the spin chuck 5 in plan view. Then, the SPM nozzle 28 is moved.
  • FIG. 2B is a diagram for specifically explaining the configuration around the opposing member 7 included in the processing unit 2.
  • a central axis nozzle 33 extending vertically extends through the through hole 23.
  • the central shaft nozzle 33 includes first and second nozzles 24 and 25 and a cylindrical casing 34 surrounding the first and second nozzles 24 and 25.
  • a first discharge port 35 for discharging a liquid downward is formed at the lower end of the first nozzle 24.
  • a second discharge port 36 for discharging the liquid downward is formed at the lower end of the second nozzle 25.
  • each of the first and second nozzles 24 and 25 is an inner tube.
  • the casing 34 extends in the vertical direction along the rotation axis A2.
  • the casing 34 is inserted into the through hole 23 in a non-contact state. Therefore, the inner periphery of the shielding plate 21 surrounds the outer periphery of the casing 34 with a gap in the radial direction.
  • the organic solvent supply unit 10 is connected to the first nozzle 24, the organic solvent pipe 37 connected to the first nozzle 24, and the inside communicating with the first discharge port 35, and the organic solvent pipe 37.
  • a first organic solvent valve 38 that opens and closes the solvent and a second organic solvent valve 39 that is interposed in the organic solvent pipe 37 on the downstream side of the first organic solvent valve 38 and opens and closes the organic solvent are included.
  • a suction pipe 41 having a suction device (not shown) connected to the tip thereof. Branch connected.
  • the suction pipe 41 is provided with a suction valve 42 for opening and closing the suction pipe 41.
  • the organic solvent from the organic solvent supply source is supplied to the second organic solvent valve 39.
  • the organic solvent supplied to the second organic solvent valve 39 is discharged from the first discharge port 35 toward the center of the upper surface of the substrate W.
  • organic solvent downstream portion 43 The inside of the downstream portion 43 (hereinafter referred to as “organic solvent downstream portion 43”) downstream of the branch position 40 in the pipe 37 is exhausted, and the organic solvent contained in the organic solvent downstream portion 43 passes to the suction pipe 41. And drawn.
  • the suction device and suction valve 42 are included in the suction unit 44.
  • the water supply unit 11 is connected to the second nozzle 25, the water nozzle 46 connected to the second nozzle 25, and the inside communicating with the second outlet 36. And a water valve 47 for switching supply and stop of water supply to the second nozzle 25.
  • a water valve 47 for switching supply and stop of water supply to the second nozzle 25.
  • the water supplied to the water pipe 46 is, for example, carbonated water, but is not limited to carbonated water, and is not limited to deionized water (DIW), electrolytic ion water, hydrogen water, ozone water, and diluted concentration (for example, about 10 ppm to 100 ppm). Any of aqueous hydrochloric acid may be used.
  • the processing unit 2 is further interposed in an inert gas pipe 48 that supplies an inert gas to a cylindrical space between the outer periphery of the casing 34 and the inner periphery of the blocking plate 21, and the inert gas pipe 48. And an inert gas valve 49.
  • the inert gas valve 49 When the inert gas valve 49 is opened, the inert gas from the inert gas supply source passes between the outer periphery of the casing 34 and the inner periphery of the blocking plate 21 and is discharged downward from the center of the lower surface of the blocking plate 21. Is done.
  • the inert gas valve 49 when the inert gas valve 49 is opened in a state where the shielding plate 21 is disposed in the proximity position, the inert gas discharged from the center of the lower surface of the shielding plate 21 and the substrate of the shielding plate 21 are discharged.
  • the inert gas flowing through the inert gas pipe 48 is, for example, nitrogen gas.
  • the inert gas is not limited to nitrogen gas, but may be other inert gas such as helium gas or argon gas.
  • the processing cup 12 includes a plurality of cups (first and second cups 51 and 52) fixedly disposed so as to surround the spin chuck 5 in a double manner, and a periphery of the substrate W.
  • a plurality of guards (first and second guards 53 and 54) for receiving the scattered processing liquid (SPM, organic solvent or water), and a guard lifting / lowering unit (lifting / lowering unit) 55 for lifting and lowering each guard independently.
  • the guard elevating unit 55 is configured to include a ball screw mechanism, for example.
  • the processing cup 12 can be accommodated so as to overlap in the vertical direction, and the guard elevating unit 55 moves up and down at least one of the first and second guards 53, 54, so that the processing cup 12 is expanded and folded. Is called.
  • the first cup 51 has an annular shape and surrounds the spin chuck 5 between the spin chuck 5 and the cylindrical member 50.
  • the first cup 51 has a substantially rotationally symmetric shape with respect to the rotation axis A1 of the substrate W.
  • the first cup 51 has a U-shaped cross section and defines a first drainage groove 59 for draining the processing liquid used for processing the substrate W.
  • a first drainage port (not shown) is opened at the lowest portion of the bottom of the first drainage groove 59, and a first drainage pipe 61 is connected to the first drainage port.
  • the treatment liquid drained through the first drain pipe 61 is sent to a predetermined recovery device or disposal device and processed by the device. *
  • the second cup 52 has an annular shape and surrounds the first cup 51.
  • the second cup 52 has a shape that is substantially rotationally symmetric with respect to the rotation axis A ⁇ b> 1 of the substrate W.
  • the second cup 52 has a U-shaped cross section, and defines a second drainage groove 62 for collecting and collecting the processing liquid used for processing the substrate W.
  • a second drainage port (not shown) is opened at the lowest portion of the bottom of the second drainage groove 62, and a second drainage pipe 64 is connected to the second drainage port. Has been.
  • the processing liquid drained through the second drainage pipe 64 is sent to a predetermined recovery device or disposal device and processed by the device.
  • the inner first guard 53 surrounds the periphery of the spin chuck 5 and has a substantially rotationally symmetric shape with respect to the rotation axis A 1 of the substrate W by the spin chuck 5.
  • the first guard 53 is integrally provided with a cylindrical guide portion 66 surrounding the spin chuck 5 and a cylindrical processing liquid separation wall 67 connected to the guide portion 66.
  • the guide portion 66 includes a cylindrical lower end 68 that surrounds the periphery of the spin chuck 5, a cylindrical thick portion 69 that extends outward from the upper end of the lower end 68 (in a direction away from the rotation axis A1 of the substrate W), A cylindrical middle step 70 extending vertically upward from the outer peripheral portion of the upper surface of the thick portion 69, and an annular shape extending obliquely upward from the upper end of the middle step 70 inward (in the direction approaching the rotation axis A1 of the substrate W). And an upper end 71.
  • the treatment liquid separation wall 67 extends vertically downward from the outer peripheral part of the thick part 69 and is located on the second drainage groove 62.
  • the lower end 68 of the guide portion 66 is positioned on the first drainage groove 59, and the first guard 53 and the first cup 51 are closest to each other in the first drainage groove 59. Housed inside.
  • the inner peripheral end of the upper end portion 71 of the guide portion 66 has a circular shape with a larger diameter than the substrate W held by the spin chuck 5 in plan view. Further, the upper end portion 71 of the guide portion 66 may have a straight cross-sectional shape as shown in FIG. 2A or the like, or may extend while drawing a smooth arc, for example.
  • the outer second guard 54 surrounds the periphery of the spin chuck 5 outside the first guard 53 and has a substantially rotationally symmetric shape with respect to the rotation axis A 1 of the substrate W by the spin chuck 5.
  • the second guard 54 includes a cylindrical portion 72 that is coaxial with the first guard 53, an upper end portion 73 that extends obliquely upward from the upper end of the cylindrical portion 72 toward the center side (a direction approaching the rotation axis A1 of the substrate W), and a cylindrical portion.
  • the lower end portion of 72 has an annular protrusion (blocking portion) 75 protruding outward.
  • the inner peripheral end of the upper end portion 73 has a circular shape with a larger diameter than the substrate W held by the spin chuck 5 in plan view.
  • the upper end portion 73 may have a straight cross-sectional shape as shown in FIG. 2A or the like, or may extend, for example, while drawing a smooth arc.
  • the tip of the upper end 73 defines an upper opening 12a (see FIG. 2A) of the processing cup 12.
  • the cylindrical portion 72 is located on the second drainage groove 62.
  • the upper end portion 73 is provided so as to overlap the upper end portion 71 of the guide portion 66 of the first guard 53 in the vertical direction, and the first guard 53 and the second guard 54 are closest to each other in the guide. It is formed so as to be close to the upper end 71 of the portion 66 with a minute gap.
  • the folded portion 74 is formed to overlap the upper end portion 71 of the guide portion 66 in the horizontal direction in a state where the first guard 53 and the second guard 54 are closest to each other.
  • the protrusion 75 has an annular upper surface formed of a flat horizontal surface.
  • the guard lifting / lowering unit 55 lifts and lowers each guard between an upper position P1 (see FIG. 3B and the like) described below and a lower position P3 (see FIG. 3C and the like) where the upper end of the guard is positioned below the substrate W.
  • the upper position P1 of the first and second guards 53 and 54 is a height position set above a liquid receiving position P2 (see FIG. 3A and the like) described below.
  • the upper position P1 of each guard is the size of an annular gap 86 (see FIG. 6B) formed between the upper end of the guard and the facing member 7 (substrate facing surface 6). This is the position where the vertical width is larger than the vertical width W1 of the nozzle arm 29.
  • the upper position P1 of each guard is a position below the lower end surface 29a of the nozzle arm 29 and above the discharge port 28a. More specifically, the upper position P1 of each guard indicates that the first interval 87 (see FIG. 6B) between the upper end of the guard and the lower end surface 29a of the nozzle arm 29 (lower end of the nozzle arm 29) is the nozzle arm. 29 is a position that is equal to or narrower than the second interval 88 (see FIGS. 6A and 6B) 88 between the lower end surface 29a of the SPM 29 and the discharge port 28a of the SPM nozzle 28. .
  • the upper position P1 of each guard is such that the upper end of the guard is an intermediate position M between the lower end surface 29a of the nozzle arm 29 and the upper surface of the substrate W held by the spin chuck 5 (see FIG. 3B). ) Above.
  • the guard lifting / lowering unit 55 can hold the first and second guards 53 and 54 at an arbitrary position between the upper position P1 and the lower position P3. Specifically, the guard lifting / lowering unit 55 sets the first and second guards 53 and 54 to liquids set between the upper position P1, the lower position P3, and the upper position P1 and the lower position P3, respectively. It is held at the receiving position P2.
  • the liquid receiving position P2 of the first and second guards 53 and 54 is a height position at which the upper end of the guard is located above the substrate W.
  • the supply of the processing liquid to the substrate W and the drying of the substrate W are performed in a state where any one of the guards (first and second guards 53 and 54) faces the peripheral end surface of the substrate W.
  • FIG. 3A to 3C are schematic diagrams for explaining the height positions of the first and second guards 53 and 54 and the flow of the airflow in the chamber 4.
  • FIG. 3A shows a state in which the second guard 54 is disposed at the liquid receiving position P2.
  • FIG. 3B shows a state in which the second guard 54 is disposed at the upper position P1.
  • FIG. 3C shows a state where the second guard 54 is disposed at the lower position P3.
  • the first and second guards 53 and 54 are both arranged at the upper position P1.
  • Such a state of the processing cup 12 is hereinafter referred to as a “first upper position state”.
  • the folded-back portion 74 overlaps the upper end portion 71 of the guide portion 66 in the horizontal direction, that is, the first and second guards 53 and 54 overlap at a narrow interval. .
  • both the first and second guards 53 and 54 are arranged at the liquid receiving position P2.
  • a state of the processing cup 12 is hereinafter referred to as a “first liquid receiving position state”.
  • the folded-back portion 74 overlaps the upper end portion 71 of the guide portion 66 in the horizontal direction, that is, the first and second guards 53 and 54 overlap each other with a narrow interval. Yes.
  • the first is a technique in which the first guard 53 is disposed at the lower position P3 and the second guard 54 is disposed at the upper position P1, as indicated by a two-dot chain line in FIG. 3B.
  • Such a state of the processing cup 12 is hereinafter referred to as a “second upper position state”.
  • the second is a technique in which the first guard 53 is disposed at the lower position P3 and the second guard 54 is disposed at the liquid receiving position P2, as indicated by a two-dot chain line in FIG. 3A.
  • Such a state of the processing cup 12 is hereinafter referred to as a “second liquid receiving position state”.
  • the distance between the first and second guards 53 and 54 is wide vertically.
  • the processing cup 12 can be configured such that none of the guards (first and second guards 53 and 54) is opposed to the peripheral end surface of the substrate W. In this state, both the first and second guards 53 and 54 are disposed at the lower position P3. Such a state of the processing cup 12 is hereinafter referred to as a “retracted state”.
  • the protrusion 75 (the upper surface thereof) of the second guard 54 and the lower surface of the partition plate 16 (the lower surface thereof).
  • the vertical interval is about 30 mm and the horizontal interval is about 2 mm. Therefore, the pressure loss at which the gas passes through the gap S between the protrusion 75 and the partition plate 16 is larger than that in the retracted state.
  • the gap S0 between the spin chuck 5 and the tip of the second guard 54 is more than in the retracted state.
  • the pressure loss when the gas passes between the spin chuck 5 and the tip of the second guard 54 is smaller than that in the retracted state (that is, exists to some extent). Accordingly, in the first liquid receiving position state or the second liquid receiving position state of the processing cup 12, the downflow DF2 flowing inside the chamber 4 causes the clearance S between the protrusion 75 and the partition plate 16 and the spin. It enters the lower space 4a of the chamber 4 through both the gap S0 between the chuck 5 and the tip of the second guard 54.
  • the processing cup 12 when the processing cup 12 is in the first upper position state or the second upper position state, the upper surface of the protrusion 75 of the second guard 54 and the lower surface of the partition plate 16 are in contact with each other.
  • the gap S between the protrusion 75 and the partition plate 16 is substantially zero (substantially closed. More strictly speaking, the vertical interval is about 3 mm and the horizontal interval is about 2 mm). .
  • FIG. 4 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 1.
  • the control device 3 is configured using, for example, a microcomputer.
  • the control device 3 includes an arithmetic unit such as a CPU, a fixed memory device, a storage unit such as a hard disk drive, and an input / output unit.
  • the storage unit stores a program executed by the arithmetic unit.
  • the control device 3 controls operations of the spin motor 17, the nozzle moving unit 32, the shielding plate rotating unit 26, the shielding plate lifting / lowering unit 27, the guard lifting / lowering unit 55, and the like.
  • the control device 3 opens and closes the SPM valve 31, the first organic solvent valve 38, the second organic solvent valve 39, the suction valve 42, the water valve 47, the inert gas valve 49, and the like.
  • FIG. 5 is a flowchart for explaining a first substrate processing example by the processing unit 2.
  • 6A to 6E are schematic diagrams for explaining a first substrate processing example.
  • the first substrate processing example is a resist removal process for removing the resist formed on the upper surface of the substrate W.
  • the first substrate processing example includes an SPM supply step (first chemical solution supply step) S3 for supplying SPM to the upper surface of the substrate W, and a liquid organic solvent such as IPA on the upper surface of the substrate W.
  • SPM and an organic solvent are a combination of chemicals that are dangerous (in this case, rapid reaction) due to contact.
  • the substrate W after the ion implantation process at a high dose is carried into the chamber 4 (step S1 in FIG. 5). It is assumed that the loaded substrate W has not been subjected to a process for ashing the resist. A fine pattern with a fine and high aspect ratio is formed on the surface of the substrate W.
  • the opposing member 7 (that is, the blocking plate 21 and the central axis nozzle 33) is retracted to the retracted position, the SPM nozzle 28 is retracted from above the spin chuck 5, and the first and second guards 53, 54 are in the lower position.
  • the control device 3 holds the substrate W
  • the hand H (see FIG. 1) of the transfer robot CR (see FIG. 1) enters the chamber 4.
  • the substrate W is delivered to the spin chuck 5 with its surface (resist formation surface) facing upward. Thereafter, the substrate W is held on the spin chuck 5.
  • control device 3 starts the rotation of the substrate W by the spin motor 17 (step S2 in FIG. 5).
  • the substrate W is raised to a predetermined liquid processing speed (in the range of about 10-500 rpm, for example, about 400 rpm), and is maintained at the liquid processing speed.
  • control device 3 performs an SPM supply process (step S3 in FIG. 5) for supplying a high temperature SPM to the upper surface of the substrate W.
  • SPM supply step S ⁇ b> 3 the control device 3 supplies the high temperature SPM from the SPM nozzle 28 to the center of the upper surface of the substrate W, for example, in order to peel the resist from the surface of the substrate W.
  • control device 3 controls the nozzle moving unit 32 to move the SPM nozzle 28 from the retracted position to the processing position.
  • the SPM nozzle 28 is disposed above the central portion of the substrate W.
  • the control device 3 controls the guard lifting / lowering unit 55 to raise the first and second guards 53 and 54 to the upper position ( The state of the processing cup 12 is changed to the first upper position state), and the first guard 53 is opposed to the peripheral end surface of the substrate W.
  • a first interval 87 (for example, substantially zero) between the upper end of the second guard 54 and the lower end surface 29a of the nozzle arm 29 is It becomes narrower than a second distance 88 (for example, about 5 mm) between the lower end surface 29a of the nozzle arm 29 and the discharge port 28a of the SPM nozzle 28.
  • the upper end of the second guard 54 is intermediate between the lower end surface 29 a of the nozzle arm 29 and the upper surface of the substrate W held by the spin chuck 5. It is a position located above the position M (see FIG. 3B).
  • the control device 3 opens the SPM valve 31.
  • high temperature for example, about 170 ° C. to about 180 ° C.
  • SPM is supplied from the SPM pipe 30 to the SPM nozzle 28, and high temperature SPM is discharged from the discharge port 28a of the SPM nozzle 28 as shown in FIG. 6B.
  • the high-temperature SPM discharged from the SPM nozzle 28 is deposited on the center of the upper surface of the substrate W, receives centrifugal force due to the rotation of the substrate W, and flows outward along the upper surface of the substrate W. Thereby, the entire upper surface of the substrate W is covered with the liquid film of SPM.
  • the resist is peeled off from the surface of the substrate W and removed from the surface of the substrate W by the high temperature SPM. Further, the supply position of the high-temperature SPM from the SPM nozzle 28 may be moved (scanned) between the center portion of the upper surface of the substrate W and the peripheral portion of the upper surface.
  • the SPM supplied to the upper surface of the substrate W is scattered from the peripheral edge of the substrate W toward the side of the substrate W and is received by the inner wall of the first guard 53.
  • the SPM flowing down along the inner wall of the first guard 53 is collected in the first drainage groove 59 and then guided to the first drainage pipe 61 to drain the SPM. Guided to a processor (not shown).
  • the SPM used is extremely high (for example, about 170 ° C. to about 180 ° C.)
  • a large amount of SPM mist MI is generated. Due to the supply of the SPM to the substrate W, a large amount of SPM mist MI generated around the upper surface of the substrate W floats on the upper surface of the substrate W.
  • the height position of the guard (at least the second guard 54) is high enough to achieve the purpose of catching the chemical liquid scattered from the substrate W, the height of the lower height
  • the atmosphere containing the SPM mist MI inside the processing cup 12 may flow out of the processing cup 12 through the upper opening 12 a of the processing cup 12 and diffuse into the chamber 4. is there.
  • the atmosphere containing the SPM mist MI becomes particles and adheres to the substrate W to contaminate the substrate W or contaminate the inner wall of the partition wall 13 of the chamber 4. It is not desirable to diffuse into
  • the gap S between the protrusion 75 and the partition plate 16 becomes substantially zero, so the downflow DF3 (see FIG. 3B) flowing inside the chamber 4 is It passes between the spin chuck 5 and the tip of the second guard 54 and enters the lower space 4 a of the chamber 4. Thereby, the outflow of the atmosphere containing the mist MI of SPM from the processing cup 12 to the inside of the chamber 4 can be more effectively suppressed.
  • the first guard 53 and the second guard 54 are closest to each other.
  • the folded portion 74 overlaps the upper end portion 71 of the guide portion 66 in the horizontal direction. Therefore, the SPM mist MI floating on the upper surface of the substrate W does not enter between the first guard 53 and the second guard 54 in the SPM supply step S3.
  • IPA may adhere to the inner wall of the second guard 54.
  • the SPM mist MI does not enter between the first guard 53 and the second guard 54, it is possible to suppress or prevent the SPM and IPA from being mixed in the processing cup 12 in the SPM supply step S3. it can. Thereby, it can suppress or prevent that the inside of the processing cup 12 becomes a particle generation source.
  • the SPM supply step S3 ends. Specifically, the control device 3 closes the SPM valve 31 and stops discharging hot SPM from the SPM nozzle 28. Further, the control device 3 controls the guard lifting unit 55 to lower the first and second guards 53 and 54 to the liquid receiving position P2, respectively. After starting the lowering of the first and second guards 53 and 54, the control device 3 controls the nozzle moving unit 32 to retract the SPM nozzle 28 to the retracted position.
  • a water supply process for supplying water as a rinsing liquid to the upper surface of the substrate W is performed.
  • the control device 3 opens the water valve 47.
  • water is discharged from the central axis nozzle 33 (second nozzle 25 (see FIG. 2B)) toward the center of the upper surface of the substrate W.
  • the water discharged from the central axis nozzle 33 is deposited on the central portion of the upper surface of the substrate W, and flows on the upper surface of the substrate W toward the peripheral portion of the substrate W under the centrifugal force generated by the rotation of the substrate W.
  • This water causes the SPM on the substrate W to flow outward and is discharged around the substrate W.
  • the liquid film of SPM on the substrate W is replaced with a liquid film of water covering the entire upper surface of the substrate W. That is, the SPM is washed away from the upper surface of the substrate W with water as the rinse liquid.
  • the water flowing on the upper surface of the substrate W is scattered from the peripheral edge of the substrate W toward the side of the substrate W and is received by the inner wall of the first guard 53. Then, the water flowing down along the inner wall of the first guard 53 is collected in the first drainage groove 59 and then guided to the first drainage pipe 61 to drain the water. Guided to a processor (not shown). If the SPM liquid used in the SPM supply step S3 adheres to the inner wall of the first guard 53, the first drain groove 59, and the pipe wall of the first drain pipe 61, the SPM liquid Is washed away by water.
  • control device 3 closes the water valve 47 and stops water discharge from the second nozzle 25. Thereby, water supply process S4 is complete
  • step S5 in FIG. 5 an organic solvent process for supplying IPA as an organic solvent to the upper surface of the substrate W is performed.
  • the control device 3 controls the shield plate lifting / lowering unit 27 to place the shield plate 21 in the proximity position.
  • the blocking plate 21 blocks the upper surface of the substrate W from the surrounding space.
  • control device 3 controls the guard lifting / lowering unit 55 so that the first guard 53 remains at the lower position P3, the second guard 54 is disposed at the upper position P1, and the second guard 54 is placed on the substrate W. It is made to oppose to the peripheral end surface.
  • control device 3 decelerates the rotation of the substrate W to a predetermined paddle speed.
  • This paddle speed means that when the substrate W is rotated at the paddle speed, the centrifugal force acting on the liquid on the upper surface of the substrate W is smaller than the surface tension acting between the rinse liquid and the upper surface of the substrate W, Alternatively, the speed is such that the centrifugal force and the surface tension almost antagonize.
  • the control device 3 opens the first organic solvent valve 38 while opening the second organic solvent valve 39 and closing the suction valve 42.
  • IPA from the organic solvent supply source is supplied to the first nozzle 24, and IPA is discharged from the first nozzle 24 to land on the upper surface of the substrate W.
  • the organic solvent step S5 water contained in the liquid film on the upper surface of the substrate W is sequentially replaced with IPA by discharging IPA from the first nozzle 24.
  • the IPA liquid film covering the entire upper surface of the substrate W is held on the upper surface of the substrate W in a paddle shape.
  • the supply of IPA to the upper surface of the substrate W is continued. Therefore, IPA is discharged from the peripheral edge of the substrate W.
  • IPA discharged from the peripheral edge of the substrate W is received by the inner wall of the second guard 54. Then, the IPA that flows down along the inner wall of the second guard 54 is collected in the second drainage groove 62 and then guided to the second drainage pipe 64 to drain the IPA. (Not shown).
  • the IPA discharged from the peripheral portion of the substrate W is received by the inner wall of the second guard 54 facing the peripheral end surface of the substrate W, and retreats downward with respect to the peripheral end surface of the substrate W. It is not received by the inner wall of the guard 53.
  • the organic solvent step S ⁇ b> 5 a small amount of IPA mist is generated around the substrate W, and the IPA mist is not guided to the inner wall of the first guard 53.
  • the SPM attached to the first guard 53 in the SPM supply step S3 is washed away by the water supply in the water supply step S4. Therefore, in the organic solvent step S5, the contact of IPA and SPM does not occur.
  • control device 3 closes the first organic solvent valve 38 and stops IPA discharge from the second nozzle 25. Thereby, organic solvent process S5 is complete
  • a spin dry process for drying the substrate W is performed.
  • the control device 3 controls the spin motor 17 with the blocking plate 21 being placed in the proximity position, thereby controlling the organic solvent from the SPM supply step S3 as shown in FIG. 6E.
  • the substrate W is accelerated to a drying rotation speed (for example, several thousand rpm) larger than the rotation speed in each step up to step S5, and the substrate W is rotated at the drying rotation speed.
  • a drying rotation speed for example, several thousand rpm
  • the control device 3 controls the shielding plate rotating unit 26 to rotate the shielding plate 21 in the rotation direction of the substrate W at a high speed.
  • an organic solvent suction process for sucking the organic solvent in the organic solvent pipe 37 is executed.
  • the organic solvent suction step the organic solvent present in the organic solvent pipe 37 after the organic solvent step S5 is sucked by the suction unit 44.
  • the control device 3 opens the suction valve 42 while opening the second organic solvent valve 39 and closing the first organic solvent valve 38.
  • the inside of the organic solvent downstream portion 43 is exhausted, and IPA present in the organic solvent downstream portion 43 is drawn into the suction pipe 41 (suction).
  • the suction of IPA is performed until the tip surface of the IPA moves back to a predetermined standby position in the pipe.
  • the control device 3 closes the suction valve 42. Thereby, it is possible to prevent the IPA from dropping from the organic solvent pipe 37 in the spin drying step S6.
  • control device 3 controls the spin motor 17 to stop the rotation of the substrate W by the spin chuck 5 (step S7 in FIG. 5), and the blocking plate rotation unit 26 is moved.
  • the rotation of the blocking plate 21 is stopped by controlling.
  • the substrate W is unloaded from the chamber 4 (step S8 in FIG. 5). Specifically, the control device 3 raises the blocking plate 21 to place it in the retracted position, lowers the second guard 54 to the lower position P3, and moves the first and second guards 53, 54 to the substrate. It is arranged below the W holding position. Thereafter, the control device 3 causes the hand H of the substrate transport robot CR to enter the chamber 4. Then, the control device 3 causes the hand of the substrate transport robot CR to hold the substrate W on the spin chuck 5 and retracts the hand H of the substrate transport robot CR from the chamber 4. Thereby, the substrate W from which the resist is removed from the surface is carried out of the chamber 4. *
  • the SPM supply step S3 is executed in the first upper position state of the processing cup 12. Therefore, in the SPM supply step S3, the first chemical solution scattered from the substrate can be satisfactorily received by the first guard 53 while the first guard 53 is disposed as high as possible.
  • the guard first and second guards 53 and 54
  • the SPM and the IPA are mixed in the processing cup 12. Can be suppressed or prevented. Thereby, it can suppress or prevent that the inside of the processing cup 12 becomes a particle generation source.
  • FIG. 7 is an illustrative sectional view showing an example of a configuration example of the lower part of the processing unit 2 in an enlarged manner. *
  • the water branch pipe 102 and the IPA branch pipe 103 may be connected to the tip of the second drainage pipe 64 of the second cup 52. That is, the distribution destination of the liquid flowing through the second drainage pipe 64 (the distribution destination of the liquid passing through the internal space defined between the first guard 53 and the second guard 54) has two branch pipes ( Branching into a water branch pipe 102 and an IPA branch pipe 103). The case where such two branch piping is employ
  • the water branch pipe 102 is provided with a water open / close valve 105 for opening and closing the water branch pipe 102.
  • the IPA branch pipe 103 is provided with an IPA on / off valve 106 for opening and closing the IPA branch pipe 103.
  • the flow destination of the liquid flowing through the second drainage pipe 64 is set to the water branch pipe 102.
  • the IPA on / off valve 106 is opened while the water on / off valve 105 is closed, the flow destination of the liquid flowing through the second drainage pipe 64 is set to the IPA branch pipe 103.
  • FIGS. 8A to 8C are schematic diagrams for explaining the second substrate processing example.
  • the second substrate processing example is the same as the first substrate processing example in the basic processing flow.
  • a second substrate processing example will be described with reference to FIGS. 2A, 2B, 5 and 7.
  • FIG. 8A to 8C will be referred to as appropriate.
  • the second substrate processing example is different from the first substrate processing example in that the state of the processing cup 12 is arranged in the second upper position state instead of the first upper position state in the SPM supply step S3. ing.
  • the second upper position state of the processing cup 12 is a state in which the first guard 53 is disposed at the liquid receiving position P2 and the second guard 54 is disposed at the upper position. Further, by placing the processing cup 12 in the second upper position in the SPM supply step S3, the wall of the internal space defined between the first guard 53 and the second guard 54 (second guard 54).
  • SPM mist MI may adhere to the inner wall of the first guard 53, the outer wall of the first guard 53, etc., but in the water supply step S4, the processing cup 12 is brought into the second liquid receiving position to start from the peripheral edge of the substrate W.
  • the walls of the internal space (the inner walls of the second guard 54 and the first guard 53
  • the SPM supply step S3 according to the second substrate processing example will be described in detail.
  • the control device 3 controls the guard lifting unit 55 to raise the first guard 53 to the liquid receiving position P2, and to The guard 54 is raised to the upper position P1, and the second guard 54 is opposed to the peripheral end surface of the substrate W.
  • the first gap 87 (between the upper end of the second guard 54 and the lower end surface 29 a of the nozzle arm 29 is provided.
  • substantially zero is narrower than a second distance 88 (for example, about 5 mm) between the lower end surface 29a of the nozzle arm 29 and the discharge port 28a of the SPM nozzle 28.
  • the second upper position state of the processing cup 12 is such that the upper end of the second guard 54 is intermediate between the lower end surface 29 a of the nozzle arm 29 and the upper surface of the substrate W held by the spin chuck 5. It is a position located above the position M (see FIG. 3B). After the second guard 54 is raised, the control device 3 opens the SPM valve 31 (see FIG. 2A).
  • the first guard 53 is disposed at the liquid receiving position P2 and the second guard 54 is disposed at the upper position P1 ( That is, in the second upper position state of the processing cup 12, the high temperature SPM is supplied to the upper surface of the substrate W in the rotating state.
  • the SPM supplied to the upper surface of the substrate W receives a centrifugal force due to the rotation of the substrate W and scatters laterally from the peripheral edge of the substrate W.
  • the SPM scattered to the side is received by the first guard 53 at the liquid receiving position P ⁇ b> 2 and flows down along the inner wall of the first guard 53.
  • the SPM flowing down the first guard 53 is led to the first drainage pipe 61 and led to a drainage treatment apparatus (not shown) for draining the SPM.
  • the SPM used is extremely high temperature (for example, about 170 ° C. to about 180 ° C.), a large amount of SPM mist MI is generated. Due to the supply of the SPM to the substrate W, a large amount of SPM mist MI generated around the upper surface of the substrate W floats on the upper surface of the substrate W.
  • annular gap 86 (see FIG. 5) formed between the upper end of the second guard 54 and the substrate facing surface 6 of the blocking plate 21 in the state of being disposed at the upper position P1. 3B) is set narrowly. Therefore, it is difficult for the atmosphere in the processing cup 12 to flow out into the chamber 4 through the annular gap 86. Thereby, it is possible to suppress or prevent the atmosphere containing the SPM mist MI inside the processing cup 12 from flowing into the chamber 4.
  • the gap S between the projection 75 and the partition plate 16 becomes substantially zero, so the downflow DF3 (see FIG. 3B) flowing inside the chamber 4 is By passing between the spin chuck 5 and the tip of the second guard 54 and entering the lower space 4a of the chamber 4, the outflow of the atmosphere containing the SPM mist MI from the processing cup 12 into the chamber 4 is prevented. Can be suppressed more effectively.
  • the SPM mist MI enters the internal space defined between the first guard 53 and the second guard 54, and as a result, the SPM mist There is a risk that MI may adhere to the walls of the internal space (the inner wall of the second guard 54, the outer wall of the first guard 53, etc.).
  • the control device 3 controls the guard lifting / lowering unit 55 to lower the first guard 53 from the liquid receiving position P2 to the lower position P3 and to move the second guard 54 to the upper position P1.
  • the state of the processing cup 12 is changed to the second liquid receiving position state.
  • the second guard 54 faces the peripheral end surface of the substrate W.
  • the control device 3 opens the water on-off valve 105 while closing the IPA on-off valve 106, thereby controlling the flow destination of the liquid flowing through the second drainage pipe 64. Set to 102.
  • the control device 3 controls the nozzle moving unit 32 to retract the SPM nozzle 28 to the retracted position.
  • a water supply process (step S4 in FIG. 5) is performed. Specifically, the control device 3 opens the water valve 47. 8B, water is discharged from the center axis nozzle 33 (from the second nozzle 25 (see FIG. 2B) toward the center of the upper surface of the substrate W. The water is discharged from the center axis nozzle 33. The water is deposited on the central portion of the upper surface of the substrate W, and flows on the upper surface of the substrate W toward the peripheral portion of the substrate W under the centrifugal force generated by the rotation of the substrate W.
  • the water supplied to the upper surface of the substrate W scatters from the peripheral edge of the substrate W toward the side of the substrate W, and is an internal space (first space) defined between the first guard 53 and the second guard 54.
  • the water flowing down along the inner wall of the second guard 54 is collected in the second drainage groove 62 and then guided to the second drainage pipe 64.
  • the second drainage pipe The water flowing through 64 is supplied to the water branch pipe 102 and then sent to a treatment device (not shown) for draining the water.
  • step S5 in FIG. 5 an organic solvent process for supplying IPA as an organic solvent to the upper surface of the substrate W is performed.
  • the control device 3 opens the IPA on-off valve 106 while closing the water on-off valve 105, thereby controlling the flow destination of the liquid flowing through the second drainage pipe 64 to the IPA branch pipe 103 ( (See FIG. 7).
  • Other controls in the organic solvent step S5 are the same as those in the first substrate processing example.
  • the organic solvent step S5 in the second substrate processing example since the distribution destination of the liquid flowing through the second drainage pipe 64 is set to the IPA branch pipe 103, the IPA flowing through the second drainage pipe 64 is Are supplied to the branch pipe 103 for IPA and then sent to a processing device (not shown) for draining the IPA.
  • the organic solvent step S5 ends.
  • step S6 the control device 3 executes a spin dry process (step S6 in FIG. 5).
  • the control device 3 stops the rotation of the substrate W by the spin chuck 5 (step S7 in FIG. 5) and stops the rotation of the blocking plate 21.
  • the substrate W is unloaded from the chamber 4 (step S8 in FIG. 5).
  • a cup cleaning process for cleaning the processing cup 12 is executed.
  • water is used as the cleaning liquid.
  • control device 3 starts the rotation of the spin base 19 by the spin motor 17 (see FIG. 2A).
  • the control device 3 Prior to the start of water supply to the spin base 19, the control device 3 controls the guard lifting / lowering unit 55 (see FIG. 2A) to keep the first guard 53 at the lower position P3 while maintaining the second guard 54. Is raised to the liquid receiving position P2. That is, as shown in FIG. 8C, the state of the processing cup 12 is changed to the second liquid receiving position state. In the second liquid receiving position state of the processing cup 12, the second guard 54 faces the peripheral edge portion of the upper surface 19 a of the spin base 19.
  • the control device 3 Prior to the start of water supply to the spin base 19, the control device 3 opens the water on-off valve 105 (see FIG. 7) while closing the IPA on-off valve 106 (see FIG. 7), thereby The flow destination of the liquid flowing through the drainage pipe 64 is set to the water branch pipe 102 (see FIG. 7).
  • the control device 3 opens the water valve 47 (see FIG. 2). Thereby, as shown in FIG. 8C, water is discharged from the central axis nozzle 33 (second nozzle 25 (see FIG. 2B)).
  • the water discharged from the central axis nozzle 33 is deposited on the central portion of the upper surface 19a of the spin base 19 and receives a centrifugal force due to the rotation of the spin base 19, and the peripheral portion of the spin base 19 on the upper surface 19a of the spin base 19. And scatters from the peripheral edge of the spin base 19 to the side.
  • the water scattered from the peripheral edge of the spin base 19 is an internal space defined between the first guard 53 and the second guard 54 (the inner wall of the second guard 54, the outer wall of the first guard 53, etc.). And is received by the inner wall of the second guard 54.
  • the water flowing down along the inner wall of the second guard 54 is collected in the second drainage groove 62 and then guided to the second drainage pipe 64 (see FIG. 7).
  • the water flowing through the second drainage pipe 64 is used for water. It is supplied to the branch pipe 102 and then sent to a treatment device (not shown) for draining water.
  • the walls of the internal space defined between the first guard 53 and the second guard 54 (the inner wall of the second guard 54 and the outer wall of the first guard 53), the second The IPA liquid adheres to the drainage groove 62 and the second drainage pipe 64, and the IPA liquid is washed away with water by the cup cleaning process.
  • the control device 3 closes the water valve 47 and stops the supply of water to the upper surface 19a of the spin base 19. Further, the control device 3 controls the spin motor 17 to stop the rotation of the spin base 19. Thereby, a cup washing
  • a dummy substrate made of SiC or the like (having the same diameter as the substrate W) is held by the spin chuck 5 and a cleaning solution such as water is used for the rotating dummy substrate.
  • a cleaning solution such as water
  • water may be scattered from the periphery of the dummy substrate to the side of the dummy substrate.
  • the SPM supply step S3 is executed in the second upper position state of the processing cup 12. Therefore, in the SPM supply step S3, the first chemical liquid scattered from the substrate can be satisfactorily received by the second guard 53 while arranging the second guard 53 as high as possible.
  • the wall of the internal space where the mist MI of the SPM generated in the SPM supply step S3 is partitioned between the first guard 53 and the second guard 54 (the inner wall of the second guard 54 or the first guard 53).
  • the internal space (the second space) in which the water scattered from the peripheral portion of the substrate W is partitioned between the first guard 53 and the second guard 54.
  • SPM adhering to the inner wall of the internal space can be washed away by supplying it to the inner wall of the guard 54 or the outer wall of the first guard 53. Therefore, it is possible to suppress or prevent the SPM and IPA from being mixed in the processing cup 12. Thereby, it can suppress or prevent that the inside of the processing cup 12 becomes a particle generation source.
  • the processing liquid discharged from the substrate W is received by the inner wall of the second guard 54. Therefore, after the organic solvent supply step S ⁇ b> 5 is finished, the IPA liquid adheres to the wall of the internal space defined between the first guard 53 and the second guard 54.
  • the wall of the internal space defined between the first guard 53 and the second guard 54 (the inner wall of the second guard 54 and the like)
  • the IPA liquid adhering to the outer wall of the first guard 53), the second drainage groove 62, and the second drainage pipe 64 can be washed away with water. Therefore, it is possible to suppress or prevent the SPM and IPA from coming into contact with each other inside the processing cup 12, thereby suppressing or preventing the inside of the processing cup 12 from becoming a particle generation source.
  • the water supply step S4 may be performed before the start of the SPM supply step S3.
  • the high temperature SPM is supplied to the upper surface of the substrate W in the rotating state with the second guard 54 disposed at the upper position P1.
  • a large distance is ensured between the upper opening 12a of the processing cup 12 and the substrate W.
  • mist of SPM is generated by supplying the high-temperature SPM to the substrate W.
  • the distance between the upper opening 12a of the processing cup 12 and the substrate W is secured large, It is difficult for the atmosphere containing mist to flow out of the processing cup 12 through the upper opening 12 a of the processing cup 12.
  • the upper position P1 of each of the guards 53 and 54 is such that the annular gap 86 formed between the upper end of the guard and the facing member 7 (substrate facing surface 6) is larger than the vertical width W1 of the nozzle arm 29.
  • the position is large and narrow as much as possible.
  • the annular gap 86 can be set to a minimum size within a range that allows passage of the nozzle arm 29. In this case, the amount of atmosphere flowing out from the inside of the processing cup 12 to the inside of the chamber 4 can be effectively reduced. Thereby, the spreading
  • the upper position P1 of each of the guards 53 and 54 is a position below the lower end surface 29a of the nozzle arm 29 and above the discharge port 28a. More specifically, the upper position P ⁇ b> 1 of each guard 53, 54 is such that the first gap 87 between the upper end of the guard and the lower end surface 38 a of the nozzle arm 29 is such that the lower end surface 29 a of the nozzle arm 29 and the SPM nozzle 28. This position is narrower than the second distance 88 between the discharge port 34a.
  • each of the guards 53 and 54 is such that the upper end of the guard is an intermediate position M between the lower end surface 38a of the nozzle arm 29 and the upper surface of the substrate W held by the spin chuck 5 (see FIG. 3B). ) Above.
  • the upper position P1 By setting the upper position P1 to such a position, the amount of atmosphere flowing out from the processing cup 12 into the chamber 4 can be effectively reduced. Thereby, the spreading
  • a cleaning chemical supply process for supplying a cleaning chemical to the upper surface of the substrate W may be performed after the water supply process S4 is completed.
  • hydrofluoric acid and SC1 mixed solution containing NH 4 OH and H 2 O 2
  • SC1 mixed solution containing NH 4 OH and H 2 O 2
  • hydrogen peroxide solution (H 2 O 2 ) is supplied to the upper surface (front surface) of the substrate W after the SPM supply step S3 or the cleaning chemical solution supply step. You may perform the hydrogen peroxide solution supply process.
  • IPA is exemplified as an example of the organic solvent used as an example of the second chemical solution, but methanol, ethanol, HFE (hydrofluoroether), acetone, and the like can be exemplified as the organic solvent.
  • the organic solvent may be a liquid mixed with other components as well as a case where it is composed of only a single component.
  • a mixed solution of IPA and acetone or a mixed solution of IPA and methanol may be used.
  • substrate processing apparatus 4 chamber 5: spin chuck (substrate holding unit) 6: Substrate facing surface 7: Opposing member 8: SPM supply unit (first chemical solution supply unit) 10: Organic solvent supply unit (second chemical supply unit) 11: Water supply unit 12: Processing cup 17: Spin motor (rotary unit) 28: SPM nozzle (nozzle) 28a: Discharge port 29: Nozzle arm 29a: Lower end surface (lower end of nozzle arm) 55: Guard lifting unit (lifting unit) 75: Projection (occlusion) 86: Annular gap A3: Oscillating axis P1: Upper position P2: Liquid receiving position M: Intermediate position
PCT/JP2017/029466 2016-08-24 2017-08-16 基板処理装置および基板処理方法 WO2018037982A1 (ja)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110364453A (zh) * 2018-03-26 2019-10-22 株式会社斯库林集团 基板处理方法以及基板处理装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6642597B2 (ja) * 2018-02-02 2020-02-05 信越半導体株式会社 ウェーハ洗浄処理装置及びウェーハ洗浄方法
JP7068044B2 (ja) * 2018-05-30 2022-05-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7197376B2 (ja) * 2019-01-17 2022-12-27 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102271566B1 (ko) * 2019-10-28 2021-07-01 세메스 주식회사 기판 처리 장치
CN111890218B (zh) * 2020-07-04 2021-09-03 林燕 一种旋转升降的化学机械研磨防溅罩
JP2023018993A (ja) * 2021-07-28 2023-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012142402A (ja) * 2010-12-28 2012-07-26 Tokyo Electron Ltd 液処理装置および液処理方法
JP2015177014A (ja) * 2014-03-14 2015-10-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3398532B2 (ja) 1995-09-28 2003-04-21 大日本スクリーン製造株式会社 基板回転式現像装置
JP3704260B2 (ja) 1999-09-22 2005-10-12 大日本スクリーン製造株式会社 基板洗浄装置および基板洗浄方法
JP4679479B2 (ja) 2006-09-28 2011-04-27 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP2009135396A (ja) * 2007-11-06 2009-06-18 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US8501025B2 (en) * 2010-03-31 2013-08-06 Dainippon Screen Mfg. Co., Ltd. Substrate treatment apparatus and substrate treatment method
JP5920867B2 (ja) 2011-09-29 2016-05-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6502037B2 (ja) * 2014-08-15 2019-04-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012142402A (ja) * 2010-12-28 2012-07-26 Tokyo Electron Ltd 液処理装置および液処理方法
JP2015177014A (ja) * 2014-03-14 2015-10-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110364453A (zh) * 2018-03-26 2019-10-22 株式会社斯库林集团 基板处理方法以及基板处理装置
CN110364453B (zh) * 2018-03-26 2023-06-13 株式会社斯库林集团 基板处理方法以及基板处理装置

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