JP6642597B2 - ウェーハ洗浄処理装置及びウェーハ洗浄方法 - Google Patents
ウェーハ洗浄処理装置及びウェーハ洗浄方法 Download PDFInfo
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- JP6642597B2 JP6642597B2 JP2018016959A JP2018016959A JP6642597B2 JP 6642597 B2 JP6642597 B2 JP 6642597B2 JP 2018016959 A JP2018016959 A JP 2018016959A JP 2018016959 A JP2018016959 A JP 2018016959A JP 6642597 B2 JP6642597 B2 JP 6642597B2
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- wafer
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- 238000004140 cleaning Methods 0.000 title claims description 78
- 238000000034 method Methods 0.000 title claims description 19
- 239000000126 substance Substances 0.000 claims description 13
- 235000012431 wafers Nutrition 0.000 description 104
- 239000003595 mist Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 230000007547 defect Effects 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Description
図1に示されるような本発明のウェーハ洗浄処理装置を用いて、ウェーハの洗浄を行った。
図2に示されるような従来のウェーハ洗浄処理装置を用いて、ウェーハの洗浄を行った以外は実施例と同じように5枚のウェーハを用いて、測定を行った。
14…ウェーハ、 15…テーブル、 16…カップ部、 17…遮蔽板、
20…洗浄処理装置、 21…給気部、 22…排気部、 23…チャンバー、
24…ウェーハ、 25…テーブル、 26…カップ部
A〜D…排気流路。
Claims (6)
- チャンバー内に配置された回転可能なテーブルの上にウェーハを保持して、前記ウェーハを回転させながら、前記ウェーハを薬液によって洗浄処理するウェーハ洗浄処理装置であって、
前記チャンバーは、チャンバー内にガスを給気する給気部及びガスを排気する排気部を備え、
前記ウェーハを保持するテーブルを囲うように配置され、回転したウェーハから振り飛ばされる洗浄後の薬液を捕捉する上下移動可能なカップ部と、
該カップ部の外側に配置され、前記チャンバーの内壁から内側に延在する中央穴有り形状の遮蔽板とを具備するものであり、
前記遮蔽板は、前記カップ部の内径以上外径以下の内径の穴を有し、前記テーブルに保持されたウェーハの高さ位置よりも低い位置に設置されるものであることを特徴とするウェーハ洗浄処理装置。 - 前記遮蔽板が、前記カップ部上昇時に前記遮蔽板と前記カップ部とにより形成される隙間を完全に塞ぐものであることを特徴とする請求項1に記載のウェーハ洗浄処理装置。
- 前記カップ部上昇時に前記テーブルと前記カップ部とにより形成される隙間の面積を排気断面積1とし、
前記カップ部下降時に前記テーブルと前記カップ部とにより形成される隙間の面積を排気断面積2とし、
前記カップ部下降時に前記遮蔽板と前記カップ部とにより形成される隙間の面積を排気断面積3としたときに、
前記遮蔽板が、排気断面積2及び排気断面積3の合計が排気断面積1以上となるものであることを特徴とする請求項1又は請求項2に記載のウェーハ洗浄処理装置。 - 前記カップ部が、前記カップ部下降時に前記テーブルと前記カップ部の上端との間に隙間を有するものであることを特徴とする請求項1から請求項3のいずれか一項に記載のウェーハ洗浄処理装置。
- 前記カップ部が、上部に内側に向かって傾斜またはR形状を有するものであることを特徴とする請求項1から請求項4のいずれか一項に記載のウェーハ洗浄処理装置。
- 請求項1から請求項5のいずれか一項に記載のウェーハ洗浄処理装置を用い、
前記遮蔽板により前記チャンバー内のガスの流れを整えながら、ウェーハを洗浄することを特徴とするウェーハ洗浄方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018016959A JP6642597B2 (ja) | 2018-02-02 | 2018-02-02 | ウェーハ洗浄処理装置及びウェーハ洗浄方法 |
CN201980007004.3A CN111602231B (zh) | 2018-02-02 | 2019-01-16 | 晶圆清洗处理装置及晶圆清洗方法 |
SG11202005740XA SG11202005740XA (en) | 2018-02-02 | 2019-01-16 | Wafer cleaning apparatus and wafer cleaning method |
KR1020207019484A KR102650020B1 (ko) | 2018-02-02 | 2019-01-16 | 웨이퍼 세정처리장치 및 웨이퍼 세정방법 |
PCT/JP2019/000982 WO2019150940A1 (ja) | 2018-02-02 | 2019-01-16 | ウェーハ洗浄処理装置及びウェーハ洗浄方法 |
TW108102833A TWI780296B (zh) | 2018-02-02 | 2019-01-25 | 晶圓洗淨處理裝置及晶圓洗淨方法 |
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JP2018016959A JP6642597B2 (ja) | 2018-02-02 | 2018-02-02 | ウェーハ洗浄処理装置及びウェーハ洗浄方法 |
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JP2019134124A JP2019134124A (ja) | 2019-08-08 |
JP6642597B2 true JP6642597B2 (ja) | 2020-02-05 |
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JP (1) | JP6642597B2 (ja) |
KR (1) | KR102650020B1 (ja) |
CN (1) | CN111602231B (ja) |
SG (1) | SG11202005740XA (ja) |
TW (1) | TWI780296B (ja) |
WO (1) | WO2019150940A1 (ja) |
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JP7351331B2 (ja) | 2021-10-29 | 2023-09-27 | 株式会社Sumco | シリコンウェーハの枚葉式スピン洗浄乾燥方法 |
WO2023097193A1 (en) * | 2021-11-23 | 2023-06-01 | Lam Research Corporation | Apparatuses and techniques for cleaning a multi-station semiconductor processing chamber |
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JP4425913B2 (ja) * | 2004-06-04 | 2010-03-03 | 東京エレクトロン株式会社 | 基板洗浄方法およびコンピュータ読取可能な記憶媒体 |
JP2009064795A (ja) * | 2005-12-27 | 2009-03-26 | Tokyo Electron Ltd | 基板処理装置および基板処理方法 |
JP2008060107A (ja) | 2006-08-29 | 2008-03-13 | Toshiba Matsushita Display Technology Co Ltd | スピン洗浄装置 |
JP2008108775A (ja) * | 2006-10-23 | 2008-05-08 | Sumitomo Precision Prod Co Ltd | 回転式基板処理装置 |
JP2010003816A (ja) * | 2008-06-19 | 2010-01-07 | Tokyo Seimitsu Co Ltd | ウェーハ洗浄装置 |
JP5371863B2 (ja) * | 2010-03-30 | 2013-12-18 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
JP5890108B2 (ja) * | 2011-04-27 | 2016-03-22 | 株式会社Screenホールディングス | 洗浄処理方法 |
JP5978071B2 (ja) * | 2012-08-31 | 2016-08-24 | 株式会社Screenホールディングス | 基板処理装置 |
JP6059087B2 (ja) * | 2013-05-31 | 2017-01-11 | 東京エレクトロン株式会社 | 液処理装置、液処理方法および記憶媒体 |
JP2015046522A (ja) * | 2013-08-29 | 2015-03-12 | 株式会社Screenホールディングス | 基板処理装置 |
JP6626762B2 (ja) * | 2016-03-30 | 2019-12-25 | 株式会社Screenホールディングス | 基板処理装置 |
JP6712482B2 (ja) * | 2016-03-31 | 2020-06-24 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP6817748B2 (ja) * | 2016-08-24 | 2021-01-20 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
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- 2018-02-02 JP JP2018016959A patent/JP6642597B2/ja active Active
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- 2019-01-16 KR KR1020207019484A patent/KR102650020B1/ko active IP Right Grant
- 2019-01-16 WO PCT/JP2019/000982 patent/WO2019150940A1/ja active Application Filing
- 2019-01-16 SG SG11202005740XA patent/SG11202005740XA/en unknown
- 2019-01-16 CN CN201980007004.3A patent/CN111602231B/zh active Active
- 2019-01-25 TW TW108102833A patent/TWI780296B/zh active
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KR20200112829A (ko) | 2020-10-05 |
CN111602231B (zh) | 2023-09-01 |
JP2019134124A (ja) | 2019-08-08 |
SG11202005740XA (en) | 2020-07-29 |
KR102650020B1 (ko) | 2024-03-22 |
TWI780296B (zh) | 2022-10-11 |
TW201935547A (zh) | 2019-09-01 |
CN111602231A (zh) | 2020-08-28 |
WO2019150940A1 (ja) | 2019-08-08 |
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