WO2017215399A1 - 掩膜组件及其制造方法、显示装置 - Google Patents

掩膜组件及其制造方法、显示装置 Download PDF

Info

Publication number
WO2017215399A1
WO2017215399A1 PCT/CN2017/084717 CN2017084717W WO2017215399A1 WO 2017215399 A1 WO2017215399 A1 WO 2017215399A1 CN 2017084717 W CN2017084717 W CN 2017084717W WO 2017215399 A1 WO2017215399 A1 WO 2017215399A1
Authority
WO
WIPO (PCT)
Prior art keywords
mask
region
vapor deposition
buffer
area
Prior art date
Application number
PCT/CN2017/084717
Other languages
English (en)
French (fr)
Inventor
李冬伟
李宝军
黄俊杰
Original Assignee
京东方科技集团股份有限公司
鄂尔多斯市源盛光电有限责任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司, 鄂尔多斯市源盛光电有限责任公司 filed Critical 京东方科技集团股份有限公司
Priority to US15/745,401 priority Critical patent/US10648070B2/en
Publication of WO2017215399A1 publication Critical patent/WO2017215399A1/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/88—Dummy elements, i.e. elements having non-functional features

Definitions

  • Embodiments of the present disclosure generally relate to the field of display technology, and in particular, to a mask assembly, a method of fabricating the same, and a display device.
  • the organic light-emitting diode (English: Organic Light-Emitting Diode; OLED) display has the advantages of self-luminous, thin thickness, light weight, fast response, wide viewing angle, rich color, high brightness, low power consumption, high temperature resistance and the like. Widely used in mobile phones, watches, computers, televisions and other products.
  • an electrode pattern, an organic light-emitting pattern, or the like can be formed by using an evaporation machine and a mask assembly.
  • the mask assembly includes: a metal frame, Open MASK (Chinese: open mask) and a fine metal mask (Fine Metal Mask; FMM for short), Open MASK includes an open area, and the FMM includes a precision row.
  • Open MASK Choinese: open mask
  • FMM Fine Metal Mask
  • the vapor deposition holes on the entire FMM, the sides of Open MASK and FMM are respectively welded on the metal frame, and the FMM is laminated on the Open MASK.
  • the orthographic projection on the Open MASK is located.
  • the area where the vapor deposition hole in the opening area is located is the evaporation area of the mask assembly (that is, the evaporation area of the mask assembly is defined by the open area of Open MASK, and the boundary of the evaporation area is Open MASK The boundary of the open area).
  • the mask assembly is disposed between the vapor deposition machine and the substrate, so that the position of the mask assembly and the substrate are relatively fixed, and the evaporation region of the mask assembly is aligned with the pattern region to be formed on the substrate.
  • the vapor deposition material in the vapor deposition machine is vapor-deposited onto the substrate through the vapor deposition zone, and a corresponding pattern is formed in the pattern area to be formed.
  • the vapor deposition region of the mask assembly in the related art is defined by the open region of Open MASK
  • the process of soldering the FMM on Open MASK easily causes the deformation of the Open MASK to cause the opening region of the Open MASK and the metal.
  • the relative position of the frame is changed, which causes the evaporation region of the mask assembly to change, and the evaporation region of the mask assembly and the pattern region to be formed on the substrate cannot be effectively aligned. Therefore, the alignment accuracy of the mask assembly is low. .
  • the present disclosure has been made to overcome at least one of the above and other problems and disadvantages of the prior art.
  • a mask assembly including: a frame, a first mask, and a second mask,
  • the first mask plate and the second mask plate are stacked on the frame;
  • the first mask plate includes an opening region
  • the second mask plate includes a vapor deposition region and a buffer region surrounding the vapor deposition region, wherein the vapor deposition region is provided with steam for passing the vapor deposition material
  • a plated hole is used for blocking the evaporation material, and an orthographic projection of a boundary of the open region on the second mask is located in the buffer region.
  • a first buffer structure configured to reduce a stress difference between the buffer region and the vapor deposition region is disposed within the buffer region.
  • a first groove is disposed in the buffer region.
  • the open face of the first recess is located on a side of the second mask away from the first mask.
  • the buffer region is annular in shape.
  • the first mask further includes a first peripheral region surrounding the opening region, the first peripheral region for blocking the evaporation material; the second mask Also included is a second peripheral region surrounding the buffer region, the orthographic projection of the second peripheral region on the first mask panel being located within the first peripheral region.
  • a second buffer structure configured to reduce a stress difference between the second peripheral region and the vapor deposition region is disposed within the second peripheral region.
  • the second buffer structure includes a second vapor deposition aperture and/or a second recess.
  • a plurality of first grooves are disposed in the buffer region, and the mask assembly includes at least one of the following (1) to (9): (1) all of the vapor deposition The areas of the open faces of the holes are equal; (2) the areas of the open faces of all the grooves are equal; (3) the area of the open faces of any of the vapor-deposited holes is equal to the area of the open faces of any of the grooves; 4) the depth of any of the grooves is greater than or equal to half of the thickness of the second mask and less than the thickness of the second mask; (5) the shape of the opening is circular; 6) the vapor deposition zone has a circular shape; (7) the buffer zone has a circular shape; (8) the radius of the inner ring of the buffer zone is equal to the radius of the vapor deposition zone; 9) The radius of the open area is larger than the radius of the inner ring of the buffer area and smaller than the radius of the outer ring of the buffer area.
  • the frame is a metal frame
  • the second mask is a fine metal mask
  • the first mask and the second mask are respectively welded to the frame.
  • a method of fabricating a mask assembly comprising the following:
  • the second mask plate includes a vapor deposition region and a buffer region surrounding the vapor deposition region, wherein the vapor deposition region is provided with an evaporation hole for the vapor deposition material to pass through,
  • the buffer zone is used to block the evaporation material
  • the first mask plate and the second mask plate are stacked on the frame such that an orthographic projection of a boundary of the opening region on the second mask plate is located in the buffer region.
  • the step of forming the second mask comprises forming a first buffer structure configured to reduce a stress difference between the buffer region and the vapor deposition region in the buffer region.
  • a first groove is disposed in the buffer region.
  • the open face of the first recess is located on a side of the second mask away from the first mask.
  • the buffer region is annular in shape.
  • the first mask further includes a first peripheral region surrounding the opening region, the first peripheral region for blocking the evaporation material; the second mask Also including a second peripheral area surrounding the buffer area, and
  • the step of laminating the first mask and the second mask on the frame further includes:
  • a second buffer structure configured to reduce a stress difference between the second peripheral region and the vapor deposition region is disposed within the second peripheral region.
  • the second buffer structure includes a second vapor deposition aperture and or a second recess.
  • a first groove is disposed in the buffer region, and the mask assembly is fabricated to include at least one of the following (1) to (9): (1) all of the steaming The areas of the open faces of the plated holes are equal; (2) the areas of the open faces of all the grooves are equal; (3) the area of the open faces of any of the vapor-deposited holes is equal to the area of the open faces of any of the grooves; (4) the depth of any of the grooves is greater than or equal to half of the thickness of the second mask and less than the thickness of the second mask; (5) the shape of the opening is circular; (6) the vapor deposition zone has a circular shape; (7) the buffer zone has a circular shape; and (8) the inner ring radius of the buffer zone is equal to the radius of the vapor deposition zone; (9) The radius of the opening region is larger than the radius of the inner ring of the buffer region and smaller than the radius of the outer ring of the buffer region.
  • the frame is a metal frame
  • the second mask is a fine metal mask
  • the first mask and the second mask are laminated on the frame
  • a display device comprising: a pattern formed using a mask assembly as described in any of the embodiments of the present disclosure.
  • FIG. 1A is a schematic structural view of a mask assembly provided by the related art
  • FIG. 1B is a schematic structural view of another mask assembly provided by the related art
  • FIG. 2A is a perspective exploded view showing the structure of a mask assembly provided by an embodiment of the present disclosure
  • 2B is a schematic plan view showing the structure of a mask assembly according to an embodiment of the present disclosure
  • 2C is a schematic plan view showing the structure of a first mask provided by an embodiment of the present disclosure.
  • 2D is a schematic plan view showing the structure of a second mask provided by an embodiment of the present disclosure.
  • 2E is a schematic view showing a positional relationship between an open area and a vapor deposition area and a buffer area according to an embodiment of the present disclosure
  • 2F is a schematic plan view showing the structure of another mask assembly according to an embodiment of the present disclosure.
  • 2G is a schematic structural diagram of a substrate provided by the related art.
  • 2H is a schematic structural diagram of a substrate according to an embodiment of the present disclosure.
  • FIG. 3 is a flow chart of a method of fabricating a mask assembly according to an embodiment of the present disclosure
  • FIG. 4 is a flow chart of another method of fabricating a mask assembly according to an embodiment of the present disclosure.
  • FIG. 1A is a schematic structural view of a mask assembly 00 provided by the related art.
  • the mask assembly 00 includes: a metal frame, Open MASK and FMM 001, the Open MASK includes an open area, and the FMM 001 includes an evaporation hole 0011 precisely arranged on the entire FMM, and the sides of the Open MASK and the FMM are respectively soldered.
  • the metal frame, and the FMM 001 is stacked on the Open MASK, in the vapor deposition hole 0011 on the FMM, the area where the orthographic projection on the Open MASK is located in the opening area where the vapor deposition hole 0011 is located is the mask assembly 00.
  • the mask assembly 00 When a pattern is formed on the substrate (not shown in FIG. 1A), the mask assembly 00 is disposed between the vapor deposition machine and the substrate, so that the position of the mask assembly 00 and the substrate are relatively fixed, and the evaporation region of the mask assembly 00 is 002 is aligned with the pattern area to be formed on the substrate, and the vapor deposition material in the vapor deposition machine is vapor-deposited onto the substrate through the evaporation region 002, and a corresponding pattern is formed in the pattern region to be formed.
  • the vapor deposition region 002 of the mask assembly 00 is defined by the open area of the Open MASK
  • the Open MASK in the process of soldering the FMM-001 with respect to Open MASK, the Open MASK is easily deformed, and the open area of the Open MASK is opened.
  • the relative position of the metal frame changes, which in turn causes the evaporation zone 002 of the mask assembly 00 to change.
  • the opening of the Open MASK is caused by the deformation of the Open MASK.
  • the relative position of the region to the metal frame is changed such that the vapor deposition region 002 of the mask assembly 00 is changed from the position shown in FIG. 1A to the position shown in FIG.
  • FIG. 2A and 2B illustrate the structure of a mask assembly 01 provided by an embodiment of the present disclosure. See picture 2A and 2B, the mask assembly 01 includes a frame 013, a first mask 012, and a second mask 011. The first mask 012 and the second mask 011 are stacked on the frame 013.
  • the first mask includes an open area 0121
  • the second mask 011 includes a vapor deposition area 0111 and a buffer or dummy area 0112 surrounding the vapor deposition area 0111, and the vapor deposition area 0111 is disposed therein.
  • the vapor deposition hole K1 through which the vapor deposition material passes, the buffer region 0112 is used to block the vapor deposition material, and the orthographic projection of the boundary of the opening region 0121 on the second mask plate 011 is located in the buffer region 0112.
  • the boundary of the opening region of the first mask is positive on the second mask.
  • the projection is located in a buffer region of the second mask surrounding the evaporation region, and the buffer region is used to block the evaporation material, such that, due to the presence of the buffer region, the position of the opening region is fixed when the second mask is fixed.
  • the change does not affect the evaporation zone. Therefore, the alignment accuracy of the mask component is high, which solves the problem of low alignment accuracy of the mask component, and achieves the effect of improving the alignment accuracy of the mask component.
  • the buffer region 0112 is annular in shape.
  • the specific structure of the frame can be referred to the related art, and the embodiments of the present disclosure are not described herein again.
  • FIG. 2C is a schematic structural diagram of a first mask 012 according to an embodiment of the present disclosure.
  • the first mask 012 includes an opening area 0021 and surrounds the opening area 0121.
  • the area on the first mask 012 is comprised of the open area 0121 and the first peripheral area 0122 for blocking the evaporation material.
  • the plate surface of the first mask plate 012 is rectangular, and the shape of the opening region 0121 may be a circular shape, and the first peripheral region 0122 is the first mask region 012 except the opening region 0121. Outside the area.
  • the open area 0121 can also be a rectangle or other shape, which is not limited by the embodiment of the present disclosure.
  • FIG. 2D is a schematic structural diagram of a second mask 011 according to an embodiment of the present disclosure.
  • the second mask 011 includes an evaporation region 0111 and a vapor deposition region. a buffer area 0112 around 0111 and a second peripheral area surrounding the buffer area 0112 0113.
  • the area on the second mask 011 is composed of a vapor deposition area 0111, a buffer area 0112, and a second peripheral area 0113.
  • the plate surface of the second mask plate 011 is rectangular, the shape of the vapor deposition region 0111 may be circular, the shape of the buffer region 0112 may be a circular shape, and the second peripheral region 0113 is the second mask plate 011.
  • a region other than the vapor deposition region 0111 and the buffer region 0112 is removed.
  • the board surface of the second mask 011, the vapor deposition area 0111, and the buffer area 0112 may be other shapes, and the specific shape may be set according to actual needs, which is not limited in the embodiment of the present disclosure. .
  • a vapor deposition hole K through which the vapor deposition material passes is disposed in the vapor deposition region 0111, and the buffer region 0112 is used to block the vapor deposition material.
  • the first region is provided in the buffer region 0112.
  • the groove C which serves as a buffer structure, can reduce the stress difference between the buffer region 0112 and the vapor deposition region 0111, avoiding the process of disposing the second mask plate 011 on the frame, and causing the second mask due to stretching. Plate 011 showed wrinkles.
  • the opening surface of the first groove C may be located on a side of the second mask plate 011 away from the first mask plate 012. The embodiment does not limit this.
  • the second peripheral region of the second mask 011 is provided with an evaporation hole; or, the second peripheral region of the second mask 011 is provided with a second recess.
  • the second peripheral region 0113 of the second mask 011 is provided with a vapor deposition hole K2.
  • the vapor deposition hole or the second groove provided on the second peripheral region 0113 serves as a buffer structure, and the stress difference between the second peripheral region 0113 and the vapor deposition region 0111 can be reduced to avoid the second mask plate 011.
  • the second mask sheet 011 is wrinkled due to stretching.
  • the orthographic projection of the second peripheral region on the first mask is located in the first peripheral region.
  • the structure of the second groove and the structure of the first groove C may be the same or different, and the structures of the vapor deposition hole K2 and the vapor deposition hole K1 may be the same or different, and the present disclosure is implemented. This example does not limit this.
  • the vapor deposition holes K1, K2 may be circular holes, rectangular holes, square holes or other shapes of holes, and the openings of all the vapor deposition holes K1, K2 may have the same shape and equal area, all The shapes of the opening faces of the grooves (including the first groove C and the second groove) may be the same and the areas are equal, and the area of the opening faces of any of the vapor deposition holes K1, K2 may be equal to the area of the opening faces of any of the grooves. And/or the depth of any of the grooves may be greater than or equal to half the thickness of the second mask 011 and less than the thickness of the second mask, so that the different positions on the second mask 011 can be reduced as much as possible The difference in stress.
  • the vapor deposition holes K1 and K2 may be formed by a full etching process, and the full etching process may etch the second mask plate 011 to form vapor deposition holes K1 and K2, and the first groove C and the second groove are both formed.
  • the half etching process may be used, and the half etching process does not etch the second mask 011 to form a groove.
  • FIG. 2E illustrates a positional relationship of an open area 0121, a vapor deposition area 0111, and a buffer area 0112 according to an embodiment of the present disclosure.
  • the shapes of the open area 0121 and the vapor deposition area 0111 are both The circular shape
  • the buffer region 0112 has a circular shape
  • the radius of the inner ring of the buffer region 0112 is equal to the radius of the vapor deposition region 0111
  • the radius of the opening region 0121 is larger than the radius of the inner ring of the buffer region 0112, and is smaller than the buffer region.
  • the first mask may be Open MASK
  • the second mask 011 may be an FMM
  • the first mask and the second mask 011 are the same shape and equal in size.
  • the shape of the frame 013 may be a rectangle and the frame may be a metal frame
  • the shapes of the first mask plate 012 and the second mask plate 011 are all rectangular, and the first mask plate 012 and the second mask plate 011 respectively It is welded to the frame 013, which is not limited by the embodiment of the present disclosure.
  • the first mask in the process of soldering the second mask 011 with respect to the first mask 012, the first mask may be deformed by force, which may result in the first mask.
  • the relative position of the opening area 0121 of the board and the frame 013 is changed, but since the evaporation area 0111 of the mask assembly 01 is defined by the second mask 011, and the buffer area 0112 is further included on the second mask 011, Thus, even if the relative position of the opening area 0121 of the first mask to the frame 013 is changed, the orthographic projection of the boundary of the opening area 0121 of the first mask after the change on the second mask 011 is still located in the buffer area. In 0112, the evaporation region of the mask assembly 01 is not changed.
  • the first mask 012 may be deformed by force, resulting in the relative position of the opening area 0121 of the first mask 012 and the frame 013. Change, making the first The opening area 0121 of a mask 012 is changed from the position shown in FIG. 2B to the position shown in FIG. 2F. Referring to FIG. 2F, the boundary of the opening area 0121 of the first mask 012 after the change is in the second mask. The orthographic projection on the diaphragm 011 is still located in the buffer region 0112. Therefore, the vapor deposition region 0111 of the mask assembly 01 is not changed, and the position of the opening region 0121 of the first mask is not changed to the mask assembly 01. The position of the vapor deposition zone 0111 has an influence, so the alignment accuracy of the mask assembly 01 provided by the embodiment of the present disclosure is high.
  • the evaporation region of the mask assembly in the related art is defined by the open area of Open MASK, and the accuracy of Open MASK is lower than that of the FMM, and the quality of the formed pattern is poor, so that a pattern is formed (such as an organic light-emitting pattern, an electrode).
  • a pattern such as an organic light-emitting pattern, an electrode.
  • the pixels in the buffer are buffer protected, and the buffer pixels are not used for image display. For example, as shown in FIG.
  • a blank area 0211 may be disposed around the display area 021 of the substrate 02, and a buffer pixel may be formed in the blank area 0211, so that when the pixel of the substrate 02 fails, the pixel that first fails is The buffer pixel in the blank area 0211, therefore, the buffer pixel can protect the pixels for displaying an image in the display area 021.
  • the width of the edge of the substrate is a, and the edge of the substrate 02 is wide, making it difficult to realize a narrow bezel display.
  • the vapor deposition region of the mask assembly provided by the embodiment of the present disclosure is defined by the FMM, and the precision of the FMM is high, and the quality of the formed pattern is good, so that when the pattern is formed, the buffer pixel may not be formed on the substrate, and therefore, It is not necessary to provide a white space around the display area of the substrate.
  • a blank area may not be provided around the display area 031 of the substrate 03.
  • the width of the edge of the substrate 03 is b, and the edge of the substrate 03 is narrow (b ⁇ a), A narrow border display is achieved.
  • the display usually includes a liquid crystal display (English: Liquid Crystal Display; abbreviated as: LCD), an OLED display, a plasma display panel (Plasma Display Panel; PDP for short) display and an electronic ink display, and the OLED display is light, thin, active, and fast. Responsive speed, wide viewing angle, rich color and high brightness, low power consumption, high and low temperature resistance, etc. are recognized as the third generation display technology behind LCD display, which can be widely used in smartphones, tablets, TVs, etc. End products. Recently, with the popularity of the Apple Watch, the use of the OLED display in the watch has quickly led the trend.
  • the mask assembly provided by the embodiment of the present disclosure can be used for the manufacture of the display of the watch, and has broad application prospects and market demands.
  • the boundary of the opening region of the first mask is positive on the second mask.
  • the projection is located in a buffer region of the second mask surrounding the evaporation region, and the buffer region is used to block the evaporation material, such that, due to the presence of the buffer region, the position of the opening region is fixed when the second mask is fixed.
  • the change does not affect the evaporation zone. Therefore, the alignment accuracy of the mask component is high, which solves the problem of low alignment accuracy of the mask component, and achieves the effect of improving the alignment accuracy of the mask component.
  • FIG. 3 is a flowchart of a method for fabricating a mask assembly according to an embodiment of the present disclosure, which may be used to manufacture the mask assembly 01 illustrated in FIG. 2B , see FIG. 3 , which is manufactured.
  • the method can include the following steps:
  • Step 301 providing a framework
  • Step 302 forming a first mask, the first mask comprising an open area
  • Step 303 forming a second mask plate, the second mask plate includes a vapor deposition region and a buffer region surrounding the vapor deposition region, wherein the vapor deposition region is provided with an evaporation hole for the vapor deposition material to pass through, and the buffer region is used for Blocking the evaporation material;
  • Step 304 Laying the first mask and the second mask on the frame such that the orthographic projection of the boundary of the opening region on the second mask is located in the buffer region.
  • the boundary of the opening region of the first mask is at the second mask.
  • the orthographic projection is located in the buffer region of the second mask surrounding the evaporation region, and the buffer region is used to block the evaporation material, so that the opening region is fixed when the second mask is fixed due to the existence of the buffer region
  • the position change does not affect the evaporation area. Therefore, the alignment accuracy of the mask assembly is high, which solves the problem of low alignment accuracy of the mask assembly, and achieves the effect of improving the alignment accuracy of the mask assembly.
  • a first recess is provided in the buffer region.
  • the open face of the first recess is located on a side of the second mask away from the first mask.
  • the shape of the buffer region is annular.
  • the first mask further includes a first peripheral region surrounding the open region, the first peripheral region for blocking the evaporation material
  • the second mask further includes a second peripheral region surrounding the buffer region,
  • the step of laminating the first mask and the second mask on the frame may further include:
  • the first mask and the second mask are stacked on the frame such that the orthographic projection of the second peripheral region on the first mask is located in the first peripheral region.
  • the second peripheral region is provided with an evaporation hole
  • a second groove is disposed in the second peripheral region.
  • the buffer region is provided with a first groove
  • the area of the opening faces of all the vapor deposition holes is equal
  • the areas of the opening faces of all the grooves are equal
  • the area of the opening face of any of the vapor deposition holes is equal to either
  • the area of the open face of the groove, and/or the depth of either groove is greater than or equal to half the thickness of the second mask and less than the thickness of the second mask.
  • the shape of the opening region and the vapor deposition region are both circular, the shape of the buffer region is circular, the radius of the inner ring of the buffer region is equal to the radius of the vapor deposition region, and/or the radius of the opening region It is larger than the radius of the inner ring of the buffer region and smaller than the radius of the outer ring of the buffer region.
  • the frame is a metal frame and the second mask is a fine metal mask.
  • 304 includes:
  • the first mask and the second mask are respectively soldered to the frame, and the first mask and the second mask are laminated.
  • the boundary of the opening region of the first mask is at the second mask.
  • the upper orthographic projection is located in the buffer region of the second mask surrounding the evaporation region, and the buffer region is used to block the evaporation material, so that the opening is fixed when the second mask is fixed due to the existence of the buffer region.
  • the change of the position of the area does not affect the evaporation area. Therefore, the alignment accuracy of the mask assembly is high, which solves the problem of low alignment accuracy of the mask assembly, and improves the alignment accuracy of the mask assembly. effect.
  • FIG. 4 is a flowchart of a method for fabricating another mask assembly according to an embodiment of the present disclosure.
  • the manufacturing method can be used to manufacture the mask assembly 01 shown in FIG. 2B.
  • the manufacturing method of the mask assembly may include the following steps:
  • Step 401 providing a framework.
  • Step 402 Form a first mask, the first mask includes an opening area and a first peripheral area surrounding the opening area, the first peripheral area is for blocking the evaporation material.
  • the first mask 012 may be Open MASK, as shown in FIG. 2C, the first mask 012 includes an open area 0121 and a first peripheral area 0122 surrounding the open area 0121, the first peripheral area 0122 is used to block the evaporation material.
  • the surface of the first mask 012 is rectangular, the opening area 0021 may be circular, and the first peripheral area 0122 is an area of the first mask 012 except the opening area 0121.
  • the first mask plate 012 may include a first mask body, and the first mask body is a rectangular plate that does not include any pattern, and the first mask body may be performed by one patterning process.
  • the first mask plate 012 is obtained by the process.
  • the one-time patterning process may include photoresist coating, exposure, development, etching, and photoresist stripping, and thus, the first mask body is applied by one patterning process.
  • the processing of the first mask 012 may include: coating a photoresist having a certain thickness on the first mask body to obtain a photoresist layer, and using a mask having a corresponding pattern to the photoresist layer Exposure is performed to form a fully exposed region and a non-exposed region of the photoresist layer, the fully exposed region corresponding to the opening region of the first mask to be formed, and the non-exposed region corresponding to the first peripheral region of the first mask to be formed Then, the developing process is used to completely remove the photoresist in the completely exposed region, and the photoresist in the non-exposed region is completely retained, and the region corresponding to the completely exposed region on the first mask body is etched by an etching process.
  • An opening region 0121 of the first mask is obtained, and then the photoresist in the non-exposed region is peeled off to obtain a first peripheral region 0122 of the first mask, to obtain an opening region 0121 of the first mask and a first peripheral region 0122. Thereafter, the first mask 012 is obtained.
  • the embodiment of the present disclosure is described by using a positive photoresist to form the first mask 012.
  • the first mask 012 may be formed by using a negative photoresist. This embodiment of the present disclosure does not limit this.
  • the mask having the corresponding pattern used in forming the first mask 012 in the step 402 is different from the first mask 012, and the mask having the corresponding pattern may include light transmission.
  • the masks of the regions and the light-shielding regions are not described herein again.
  • Step 403 forming a second mask plate, the second mask plate includes a vapor deposition region, a buffer region surrounding the vapor deposition region, and a second peripheral region surrounding the buffer region, wherein the vapor deposition region is provided with an evaporation plate The evaporation hole through which the material passes, and the buffer area is used to block the evaporation material.
  • the second mask 011 may be an FMM, as shown in FIG. 2D, the second mask 011 includes a vapor deposition region 0111, a buffer region 0112 surrounding the vapor deposition region 0111, and a buffer region 0112.
  • the surrounding second peripheral region 0113, the plate surface of the second mask plate 011 is rectangular, the vapor deposition region 0111 may have a circular shape, the buffer region 0112 has a circular shape, and the second peripheral region 0113 is the second.
  • a region other than the vapor deposition region 0111 and the buffer region 0112 is removed from the mask 011.
  • the vapor deposition zone 0111 is provided with an evaporation hole K1 through which the evaporation material passes, the buffer region 0112 is provided with a first groove C, and the second peripheral region 0113 is provided with a vapor deposition hole.
  • K2 exemplarily, the vapor deposition hole may be a circular hole, a rectangular hole, a square hole or other shapes
  • the openings of all the vapor-deposited holes have the same shape and the same area, and the open faces of all the grooves have the same shape and the same area, and the area of the open face of any of the vapor-deposited holes is equal to the area of the open face of any of the grooves.
  • the depth of any of the grooves is greater than or equal to half the thickness of the second mask 011 and less than the thickness of the second mask.
  • the second mask plate 011 may include a second mask body, and the second mask body is a rectangular plate that does not include any pattern, and the second mask body may be performed by one patterning process. Processing results in a second mask 011.
  • the one patterning process may include photoresist coating, exposure, development, etching, and photoresist stripping. Therefore, the second mask body is processed by one patterning process to obtain a second mask sheet 011.
  • the method may include: coating a photoresist having a certain thickness on the second mask body to obtain a photoresist layer, and exposing the photoresist layer by using a gray mask or a halftone mask having a corresponding pattern;
  • the photoresist layer is formed into a fully exposed area, a partially exposed area and a non-exposed area, the fully exposed area corresponds to the evaporation hole on the second mask to be formed, and the partially exposed area corresponds to the second mask to be formed
  • the groove, the non-exposed area corresponds to other areas, and then processed by a developing process, so that the photoresist in the completely exposed area is completely removed, the photoresist in the partially exposed area is partially removed, and the photoresist in the non-exposed area is completely retained.
  • Etching process is performed on the region corresponding to the completely exposed region of the second mask body to obtain an evaporation hole of the second mask, and then part of the exposure may be removed by using a process such as development, ashing or stripping.
  • a process such as development, ashing or stripping.
  • an area corresponding to a portion of the exposed portion of the second mask body is etched by an etching process to obtain a recess of the second mask, and then the photoresist in the non-exposed region is peeled off to obtain a second Mask plate 011.
  • the embodiment of the present disclosure is described by using a positive photoresist to form the second mask 011.
  • the second mask 011 may be formed by using a negative photoresist. This embodiment of the present disclosure does not limit this.
  • step 403 is described by using a gray mask or a halftone mask to form the second mask 011 by one patterning process. In practical applications, it is also possible to pass two patterns. The process forms a second mask 011, which is not described herein again.
  • Step 404 stacking the first mask and the second mask on the frame to make the opening area
  • the orthographic projection of the boundary in the second mask is located in the buffer region, and the orthographic projection of the second peripheral region on the first mask is located in the first peripheral region.
  • the mask module 01 can be formed by laminating the first mask 012 and the second mask 011 on the frame.
  • the specific structure of the mask module 01 can be referred to FIG. 2B. .
  • the shape of the frame may be a rectangle, and the shapes of the first mask 012 and the second mask 011 may both be rectangular, and the frame may be a metal frame, the first mask 012 and The material of the second mask 011 can be metal. Therefore, the first mask 012 and the second mask 011 can be respectively soldered on the frame, so that the first mask 012 and the second mask 011 Cascade.
  • the first mask plate 012 may be first welded to the frame, and then the second mask plate 011 is welded to the frame, so that the opening surface of the first groove C of the buffer region of the second mask plate 011 is located.
  • the second mask 011 is away from one side of the first mask 012, and the orthographic projection of the second peripheral region 0113 of the second mask 011 on the first mask 012 is located on the first mask 012.
  • the opening area 0121 of the first mask 012 has a circular shape
  • the vapor deposition area 0111 of the second mask 011 has a circular shape
  • the buffer area 0112 has a circular shape.
  • the radius of the inner ring of the buffer region 0112 is equal to the radius of the vapor deposition region 0111, and/or the radius of the opening region 0121 is greater than the radius of the inner ring of the buffer region 0112 and smaller than the radius of the outer ring of the buffer region 0112.
  • the boundary of the opening region of the first mask is at the second mask.
  • the orthographic projection is located in the buffer region of the second mask surrounding the evaporation region, and the buffer region is used to block the evaporation material, so that the opening region is fixed when the second mask is fixed due to the existence of the buffer region
  • the position change does not affect the evaporation area. Therefore, the alignment accuracy of the mask assembly is high, which solves the problem of low alignment accuracy of the mask assembly, and achieves the effect of improving the alignment accuracy of the mask assembly.
  • the embodiment of the present disclosure further provides a display device, which comprises a graphic formed by using the mask assembly shown in FIG. 2B, and the display device may be: a watch, an electronic paper, a mobile phone, a tablet computer, or a battery. Any product or component that has a display function, such as a video camera, monitor, notebook computer, digital photo frame, and navigator.
  • the display device includes a pattern formed by using a mask assembly. Since the evaporation region of the mask assembly is defined by the second mask, the boundary of the opening region of the first mask is at The orthographic projection on the second mask is located in the buffer region of the second mask surrounding the evaporation region, and the buffer region is used to block the evaporation material, so that the second mask is fixed due to the presence of the buffer region When the plate is used, the change of the position of the opening region does not affect the vapor deposition region. Therefore, the alignment accuracy of the mask assembly is high, the quality of the formed pattern is good, and the display quality of the display device is good.
  • a person skilled in the art may understand that all or part of the steps of implementing the above embodiments may be completed by hardware, or may be instructed by a program to execute related hardware, and the program may be stored in a computer readable storage medium.
  • the storage medium mentioned may be a read only memory, a magnetic disk or an optical disk or the like.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种掩膜组件(01)，包括：框架(013)、第一掩膜板(012)和第二掩膜板(011)，第一掩膜板(012)和第二掩膜板(011)层叠设置在框架(013)上；第一掩膜板(012)包括开口区域(0121)，第二掩膜板(011)包括蒸镀区域(0111)和围绕在蒸镀区域(0111)周围的缓冲区域(0112)，蒸镀区域(0111)内设置有供蒸镀材料通过的第一蒸镀孔(K1)，缓冲区域(0112)用于对蒸镀材料进行阻挡，开口区域(0121)的边界在第二掩膜板(011)上的正投影位于缓冲区域(0112)内。还公开了掩模组件(01)的制造方法和显示装置。

Description

掩膜组件及其制造方法、显示装置
本申请主张在2016年6月15日在中国专利局提交的中国专利申请No.201610423043.X的优先权，其全部内容通过引用包含于此。
技术领域
本公开的实施例一般地涉及显示技术领域，并且特别涉及一种掩膜组件及其制造方法、以及显示装置。
背景技术
有机发光二极管(英文：Organic Light-Emitting Diode；简称：OLED)显示器具有自主发光、厚度薄、重量轻、响应速度快、视角广、色彩丰富以及高亮度、低功耗、耐高低温等优点，广泛应用于手机、手表、电脑、电视机等产品中。在OLED显示器的制造过程中，可以采用蒸镀机配合掩膜组件形成电极图形、有机发光图形等。
相关技术中，掩膜组件包括：金属框架、Open MASK(中文：开放掩膜板)和精细金属掩膜板(英文：Fine Metal Mask；简称：FMM)，Open MASK包括开口区域，FMM包括精密排布在整个FMM上的蒸镀孔，Open MASK和FMM的四周分别焊接在金属框架上，且FMM层叠设置在Open MASK上，在FMM上的蒸镀孔中，其在Open MASK上的正投影位于开口区域内的蒸镀孔所在的区域为该掩膜组件的蒸镀区域(也即是，掩膜组件的蒸镀区域由Open MASK的开口区域来限定，该蒸镀区域的边界为Open MASK的开口区域的边界)。在基板上形成图形时，将掩膜组件设置在蒸镀机与基板之间，使掩膜组件与基板的位置相对固定，掩膜组件的蒸镀区域与基板上的待形成图形区域对准，蒸镀机中的蒸镀材料通过蒸镀区域蒸镀到基板上，在待形成图形区域形成相应的图形。
但是，由于相关技术中的掩膜组件的蒸镀区域由Open MASK的开口区域来限定，而在Open MASK上焊接FMM的过程中，容易导致Open MASK受力变形，使Open MASK的开口区域与金属框架的相对位置发生改变，进而导致掩膜组件的蒸镀区域发生改变，掩膜组件的蒸镀区域与基板上的待形成图形区域无法有效对准，因此，掩膜组件的对位精度较低。
发明内容
为了克服现有技术存在的上述和其它问题和缺陷中的至少一种，提出了本公开。
根据本公开的一个方面，提供一种掩膜组件，所述掩膜组件包括：框架、第一掩膜板和第二掩膜板，
所述第一掩膜板和所述第二掩膜板层叠设置在所述框架上；
所述第一掩膜板包括开口区域，所述第二掩膜板包括蒸镀区域和围绕在所述蒸镀区域周围的缓冲区域，所述蒸镀区域内设置有供蒸镀材料通过的蒸镀孔，所述缓冲区域用于对蒸镀材料进行阻挡，所述开口区域的边界在所述第二掩膜板上的正投影位于所述缓冲区域内。
在一个实施例中，缓冲区域内设置有被构造成减小缓冲区域与蒸镀区域之间的应力差的第一缓冲结构。
在一个实施例中，所述缓冲区域内设置有第一凹槽。
在一个实施例中，所述第一凹槽的开口面位于所述第二掩膜板远离所述第一掩膜板的一面上。
在一个实施例中，所述缓冲区域的形状为环形。
在一个实施例中，所述第一掩膜板还包括围绕在所述开口区域周围的第一外围区域，所述第一外围区域用于对蒸镀材料进行阻挡；所述第二掩膜板还包括围绕在所述缓冲区域周围的第二外围区域，所述第二外围区域在所述第一掩膜板上的正投影位于所述第一外围区域内。
在一个实施例中，所述第二外围区域内设置有被构造成减小第二外围区域与蒸镀区域之间的应力差的第二缓冲结构。示例性地，第二缓冲结构包括第二蒸镀孔和/或第二凹槽。
在一些实施例中，所述缓冲区域内设置有多个第一凹槽，并且所述掩膜组件包括下述(1)至(9)中的至少一种：(1)所有所述蒸镀孔的开口面的面积相等；(2)所有凹槽的开口面的面积相等；(3)任一所述蒸镀孔的开口面的面积等于任一所述凹槽的开口面的面积；(4)任一所述凹槽的深度大于或者等于所述第二掩膜板的厚度的一半且小于所述第二掩膜板的厚度；(5)所述开口区域的形状为圆形；(6)所述蒸镀区域的形状为圆形；(7)所述缓冲区域的形状为圆环形；(8)所述缓冲区域的内环的半径与所述蒸镀区域的半径相等；(9)所述开口区域的半径大于所述缓冲区域的内环的半径且小于所述缓冲区域的外环的半径。
在一个实施例中，所述框架为金属框架，所述第二掩膜板为精细金属掩膜板，所述第一掩膜板和所述第二掩膜板分别焊接在所述框架上。
根据本公开的另一个方面，提供一种掩膜组件的制造方法，所述方法包括下述：
提供框架；
形成第一掩膜板，所述第一掩膜板包括开口区域；
形成第二掩膜板，所述第二掩膜板包括蒸镀区域和围绕在所述蒸镀区域周围的缓冲区域，所述蒸镀区域内设置有供蒸镀材料通过的蒸镀孔，所述缓冲区域用于对蒸镀材料进行阻挡；
将所述第一掩膜板和所述第二掩膜板层叠设置在所述框架上，使所述开口区域的边界在所述第二掩膜板上的正投影位于所述缓冲区域内。
在一个实施例中，形成第二掩膜板的步骤包括在缓冲区域内形成被构造成减小缓冲区域与蒸镀区域之间的应力差的第一缓冲结构。
在一个实施例中，所述缓冲区域内设置有第一凹槽。
在一个实施例中，所述第一凹槽的开口面位于所述第二掩膜板远离所述第一掩膜板的一面上。
在一个实施例中，所述缓冲区域的形状为环形。
在一个实施例中，所述第一掩膜板还包括围绕在所述开口区域周围的第一外围区域，所述第一外围区域用于对蒸镀材料进行阻挡；所述第二掩膜板还包括围绕在所述缓冲区域周围的第二外围区域，并且
将所述第一掩膜板和所述第二掩膜板层叠设置在所述框架上的步骤还包括：
将所述第一掩膜板和所述第二掩膜板层叠设置在所述框架上，使所述第二外围区域在所述第一掩膜板上的正投影位于所述第一外围区域内。
在一个实施例中，所述第二外围区域内设置有被构造成减小第二外围区域与蒸镀区域之间的应力差的第二缓冲结构。示例性地，第二缓冲结构包括第二蒸镀孔和、或第二凹槽。
在一些实施例中，所述缓冲区域内设置有第一凹槽，并且所述掩膜组件被制造成包括下述(1)至(9)中的至少一种：(1)所有所述蒸镀孔的开口面的面积相等；(2)所有凹槽的开口面的面积相等；(3)任一所述蒸镀孔的开口面的面积等于任一所述凹槽的开口面的面积；(4)任一所述凹槽的深度大于或者等于所述第二掩膜板的厚度的一半且小于所述第二掩膜板的厚度；(5)所述开口区域的形状为圆形；(6)所述蒸镀区域的形状为圆形；(7)所述缓冲区域的形状为圆环形；(8)所述缓冲区域的内环的半径与所述蒸镀区域的半径相等；(9)所述开口区域的半径大于所述缓冲区域的内环的半径且小于所述缓冲区域的外环的半径。
在一个实施例中，所述框架为金属框架，所述第二掩膜板为精细金属掩膜板，并且将所述第一掩膜板和所述第二掩膜板层叠设置在所述框架上的步骤包括：
将所述第一掩膜板和所述第二掩膜板分别焊接在所述框架上，使所述第一 掩膜板和所述第二掩膜板层叠。
根据本公开的又一个方面，提供一种显示装置，所述显示装置包括：采用本公开的任一实施例中描述的掩膜组件形成的图形。
附图说明
为了更清楚地说明本公开实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1A是相关技术提供的一种掩膜组件的结构示意图；
图1B是相关技术提供的另一种掩膜组件的结构示意图；
图2A是示出本公开实施例提供的一种掩膜组件的结构的透视分解图；
图2B是示出本公开实施例提供的一种掩膜组件的结构的平面示意图；
图2C是示出本公开实施例提供的一种第一掩膜板的结构的平面示意图；
图2D是示出本公开实施例提供的一种第二掩膜板的结构的平面示意图；
图2E是示出本公开实施例提供的一种开口区域与蒸镀区域、缓冲区域之间的位置关系的示意图；
图2F是示出本公开实施例提供的另一种掩膜组件的结构的平面示意图；
图2G是相关技术提供的一种基板的结构示意图；
图2H是本公开实施例提供的一种基板的结构示意图；
图3是本公开实施例提供的一种掩膜组件的制造方法的流程图；
图4是本公开实施例提供的另一种掩膜组件的制造方法的流程图。
此处的附图被并入说明书中并构成本说明书的一部分，示出了本公开的部分示例性实施例，并与说明书一起用于解释本公开的原理。
具体实施方式
为了使本公开的目的、技术方案和优点更加清楚，下面将结合附图对本公开作进一步地详细描述，显然，所描述的实施例仅仅是本公开一部份实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本公开保护的范围。
图1A示出了相关技术提供的一种掩膜组件00的结构示意图。参见图1A，该掩膜组件00包括：金属框架、Open MASK和FMM 001，Open MASK包括开口区域，FMM 001包括精密排布在整个FMM上的蒸镀孔0011，Open MASK和FMM的四周分别焊接在金属框架上，且FMM 001层叠设置在Open MASK上，FMM上的蒸镀孔0011中，其在Open MASK上的正投影位于开口区域内的蒸镀孔0011所在的区域为该掩膜组件00的蒸镀区域002。在基板(图1A中未示出)上形成图形时，将掩膜组件00设置在蒸镀机与基板之间，使掩膜组件00与基板的位置相对固定，掩膜组件00的蒸镀区域002与基板上的待形成图形区域对准，蒸镀机中的蒸镀材料通过蒸镀区域002蒸镀到基板上，在待形成图形区域形成相应的图形。
但是，由于该掩膜组件00的蒸镀区域002由Open MASK的开口区域来限定，而在相对于Open MASK焊接FMM-001的过程中，容易导致Open MASK受力变形，使Open MASK的开口区域与金属框架的相对位置发生改变，进而导致掩膜组件00的蒸镀区域002发生改变，比如，在相对于Open MASK焊接FMM-001的过程中，由于Open MASK受力变形，导致Open MASK的开口区域与金属框架的相对位置发生改变，使得掩膜组件00的蒸镀区域002由如图1A所示的位置改变至如图1B所示的位置(图1B中虚线圈所示区域为Open MASK与金属框架的相对位置改变之前Open MASK的开口区域)，那么，由于掩膜组件00与基板的位置相对固定，因此，蒸镀区域002位置的改变会导致掩膜组件00的蒸镀区域002与基板上的待形成图形区域无法有效对准，掩膜组件00的对位精度较低。
图2A和2B示出了本公开实施例提供的一种掩膜组件01的结构。参见图 2A和2B，该掩膜组件01包括：框架013、第一掩膜板012和第二掩膜板011，第一掩膜板012和第二掩膜板011层叠设置在框架013上。
其中，第一掩膜板包括开口区域0121，第二掩膜板011包括蒸镀区域0111和围绕在蒸镀区域0111周围的缓冲或虚设(英文：Dummy)区域0112，蒸镀区域0111内设置有供蒸镀材料通过的蒸镀孔K1，缓冲区域0112用于对蒸镀材料进行阻挡，开口区域0121的边界在第二掩膜板011上的正投影位于缓冲区域0112内。
综上所述，本公开实施例提供的掩膜组件，由于掩膜组件的蒸镀区域由第二掩膜板限定，第一掩膜板的开口区域的边界在第二掩膜板上的正投影位于第二掩膜板的围绕蒸镀区域的缓冲区域内，而缓冲区域用于对蒸镀材料进行阻挡，这样，由于缓冲区域的存在，在固定第二掩膜板时，开口区域位置的改变不会对蒸镀区域产生影响，因此，掩膜组件的对位精度较高，解决了掩膜组件的对位精度较低的问题，达到了提高掩膜组件的对位精度的效果。
在一个实施例中，如图2B所示，缓冲区域0112的形状为环形。框架的具体结构可以参考相关技术，本公开实施例在此不再赘述。
在一个实施例中，请参考图2C，其示出了本公开实施例提供的一种第一掩膜板012的结构示意图，第一掩膜板012包括开口区域0121和围绕在该开口区域0121周围的第一外围区域0122。在一个示例中，第一掩膜板012上的区域由该开口区域0121和第一外围区域0122组成，该第一外围区域0122用于对蒸镀材料进行阻挡。示例地，如图2C所示，第一掩膜板012的板面为矩形，开口区域0121的形状可以为圆形，第一外围区域0122为该第一掩膜板012上除该开口区域0121之外的区域。实际应用中，该开口区域0121还可以为矩形或者其他形状，本公开实施例对此不作限定。
在一个实施例中，请参考图2D，其示出了本公开实施例提供的一种第二掩膜板011的结构示意图，第二掩膜板011包括蒸镀区域0111、围绕在蒸镀区域0111周围的缓冲区域0112和围绕在缓冲区域0112周围的第二外围区域 0113。在一个示例中，第二掩膜板011上的区域由蒸镀区域0111、缓冲区域0112和第二外围区域0113组成。示例地，第二掩膜板011的板面为矩形，蒸镀区域0111的形状可以为圆形，缓冲区域0112的形状可以为圆环形，第二外围区域0113为该第二掩膜板011上除该蒸镀区域0111和缓冲区域0112之外的区域。需要说明的是，实际应用中，第二掩膜板011的板面、蒸镀区域0111和缓冲区域0112还可以为其他形状，其具体形状可以根据实际需要设置，本公开实施例对此不作限定。
进一步地，如图2D所示，蒸镀区域0111内设置有供蒸镀材料通过的蒸镀孔K，缓冲区域0112用于对蒸镀材料进行阻挡，示例地，缓冲区域0112内设置有第一凹槽C，其作为缓冲结构，可以减小缓冲区域0112与蒸镀区域0111之间的应力差，避免将第二掩膜板011设置在框架上的过程中，由于拉伸导致第二掩膜板011出现皱纹。在一个实施例中，在将第二掩膜板011设置在框架上时，可以使第一凹槽C的开口面位于第二掩膜板011远离第一掩膜板012的一面上，本公开实施例对此不作限定。
在一些实施例中，第二掩膜板011的第二外围区域内设置有蒸镀孔；或者，第二掩膜板011的第二外围区域内设置有第二凹槽。示例地，如图2D所示，第二掩膜板011的第二外围区域0113上设置有蒸镀孔K2。其中，在第二外围区域0113上设置的蒸镀孔或者第二凹槽作为缓冲结构，可以减小第二外围区域0113与蒸镀区域0111之间的应力差，避免将第二掩膜板011设置在框架上的过程中，由于拉伸导致第二掩膜板011出现皱纹。其中，在如图2B所示的掩膜组件01中，第二外围区域在第一掩膜板上的正投影位于第一外围区域内。需要说明的是，实际应用中，第二凹槽的结构与第一凹槽C的结构可以相同，也可以不同，蒸镀孔K2与蒸镀孔K1的结构也可以相同或不同，本公开实施例对此不作限定。
在一些实施例中，蒸镀孔K1、K2可以为圆形孔、矩形孔、方形孔或者其他形状的孔，所有蒸镀孔K1、K2的开口面的形状可以相同且面积相等，所有 凹槽(包括第一凹槽C和第二凹槽)的开口面的形状可以相同且面积相等，任一蒸镀孔K1、K2的开口面的面积可以等于任一凹槽的开口面的面积，和/或任一凹槽的深度可以大于或者等于第二掩膜板011的厚度的一半且小于第二掩膜板的厚度，这样可以尽可能的减小第二掩膜板011上不同位置的应力差。其中，蒸镀孔K1、K2可以通过全刻蚀工艺形成，全刻蚀工艺可以将第二掩膜板011刻透从而形成蒸镀孔K1、K2，第一凹槽C和第二凹槽都可以采用半刻蚀工艺形成，半刻蚀工艺不会将第二掩膜板011刻透从而形成凹槽。
进一步地，请参考图2E，其示出了本公开的一种实施例提供的一种开口区域0121、蒸镀区域0111和缓冲区域0112的位置关系，开口区域0121和蒸镀区域0111的形状都为圆形，缓冲区域0112的形状为圆环形，缓冲区域0112的内环的半径与蒸镀区域0111的半径相等，开口区域0121的半径大于缓冲区域0112的内环的半径，且小于缓冲区域0112的外环的半径。
在一些实施例中，第一掩膜板可以为Open MASK，第二掩膜板011可以为FMM，第一掩膜板和第二掩膜板011的形状相同，大小相等。示例地，框架013的形状可以为矩形且框架可以为金属框架，第一掩膜板012和第二掩膜板011的形状都为矩形，第一掩膜板012和第二掩膜板011分别焊接在框架013上，本公开实施例对此不作限定。
在如图2B所示的掩膜组件01中，在相对于第一掩膜板012焊接第二掩膜板011的过程中，第一掩膜板可能受力变形，这会导致第一掩膜板的开口区域0121与框架013的相对位置发生改变，但是由于掩膜组件01的蒸镀区域0111是由第二掩膜板011限定的，且第二掩膜板011上还包括缓冲区域0112，这样，即使第一掩膜板的开口区域0121与框架013的相对位置发生改变，只要改变后第一掩膜板的开口区域0121的边界在第二掩膜板011上的正投影仍然位于缓冲区域0112内，就不会改变掩膜组件01的蒸镀区域。比如，在相对于第一掩膜板012焊接第二掩膜板011的过程中，第一掩膜板012可能受力变形，导致第一掩膜板012的开口区域0121与框架013的相对位置发生改变，使得第 一掩膜板012的开口区域0121由如图2B所示的位置改变至如图2F所示的位置.参见图2F可知，改变后第一掩膜板012的开口区域0121的边界在第二掩膜板011上的正投影仍然位于缓冲区域0112内，因此，掩膜组件01的蒸镀区域0111未发生改变，第一掩膜板的开口区域0121的位置的改变不会对掩膜组件01的蒸镀区域0111的位置产生影响，所以，本公开实施例提供的掩膜组件01的对位精度较高。
相关技术中的掩膜组件的蒸镀区域由Open MASK的开口区域来限定，而Open MASK的精度比FMM的精度低，形成的图形的质量较差，这样在形成图形(比如有机发光图形、电极图形)时，为了避免基板的显示区域的周边的像素出现故障，通常需要在基板的显示区域的周边设置留白区，并在留白区形成缓冲或虚设像素(英文：Dummy Pixel)来对显示区域中的像素进行缓冲保护，该缓冲像素不用于图像显示。示例地，如图2G所示，可以在基板02的显示区域021的周边设置留白区0211，在留白区0211中形成缓冲像素，这样当基板02的像素出现故障时，首先出现故障的像素为留白区0211中的缓冲像素，因此，该缓冲像素可以对显示区域021中用于显示图像的像素进行保护。但是，设置留白区0211之后，如图2G所示，基板的边缘的宽度为a，该基板02的边缘较宽，难以实现窄边框显示。
本公开实施例提供的掩膜组件的蒸镀区域由FMM来限定，而FMM的精度较高，形成的图形的质量较好，这样在形成图形时，可以不在基板上形成缓冲像素，因此，也不需要在基板的显示区域的周边设置留白区。示例地，如图2H所示，可以不在基板03的显示区域031的周边设置留白区，此时，基板03的边缘的宽度为b，该基板03的边缘较窄(b＜a)，可以实现窄边框显示。
相关技术中，为了提高掩膜组件的对位精度，需要不断提高Open MASK的开口精度，而Open MASK是精度较低的掩膜板，提高Open MASK的开口精度的过程复杂，导致Open MASK的制作工艺难度较高，本公开实施例通过采用FMM限定掩膜组件的蒸镀区域，可以不再要求Open MASK具有较高的 开口精度就可以提高掩膜组件的对位精度，因此，可以降低Open MASK的开口精度要求，降低Open MASK的制作工艺难度。
显示器通常包括液晶显示器(英文：Liquid Crystal Display；简称：LCD)、OLED显示器、等离子显示屏(英文：Plasma Display Panel；简称：PDP)显示器和电子墨水显示器，OLED显示器以其轻薄、主动发光、快响应速度、广视角、色彩丰富及高亮度、低功耗、耐高低温等众多优点而被业界公认为是LCD显示器之后的第三代显示技术，可以广泛用于智能手机、平板电脑、电视等终端产品。近期随着苹果手表的热卖，将OLED显示器运用在手表中迅速引领了潮流，本公开实施例提供的掩膜组件可以用于手表的显示器的制作，具有广泛的应用前景和市场需求。
综上所述，本公开实施例提供的掩膜组件，由于掩膜组件的蒸镀区域由第二掩膜板限定，第一掩膜板的开口区域的边界在第二掩膜板上的正投影位于第二掩膜板的围绕蒸镀区域的缓冲区域内，而缓冲区域用于对蒸镀材料进行阻挡，这样，由于缓冲区域的存在，在固定第二掩膜板时，开口区域位置的改变不会对蒸镀区域产生影响，因此，掩膜组件的对位精度较高，解决了掩膜组件的对位精度较低的问题，达到了提高掩膜组件的对位精度的效果。
请参考图3，其示出了本公开实施例提供的一种掩膜组件的制造方法的流程图，该制造方法可以用于制造图2B所示的掩膜组件01，参见图3，该制造方法可以包括下述步骤：
步骤301、提供框架；
步骤302、形成第一掩膜板，第一掩膜板包括开口区域；
步骤303、形成第二掩膜板，第二掩膜板包括蒸镀区域和围绕在蒸镀区域周围的缓冲区域，蒸镀区域内设置有供蒸镀材料通过的蒸镀孔，缓冲区域用于对蒸镀材料进行阻挡；和
步骤304、将第一掩膜板和第二掩膜板层叠设置在框架上，使开口区域的边界在第二掩膜板上的正投影位于缓冲区域内。
综上所述，本公开实施例提供的掩膜组件的制造方法，由于掩膜组件的蒸镀区域由第二掩膜板限定，第一掩膜板的开口区域的边界在第二掩膜板的正投影位于第二掩膜板的围绕蒸镀区域的缓冲区域内，而缓冲区域用于对蒸镀材料进行阻挡，这样，由于缓冲区域的存在，在固定第二掩膜板时，开口区域位置的改变不会对蒸镀区域产生影响，因此，掩膜组件的对位精度较高，解决了掩膜组件的对位精度较低的问题，达到了提高掩膜组件的对位精度的效果。
在一个实施例中，缓冲区域内设置有第一凹槽。
在一个实施例中，第一凹槽的开口面位于第二掩膜板远离第一掩膜板的一面上。
在一个实施例中，缓冲区域的形状为环形。
在一些实施例中，第一掩膜板还包括围绕在开口区域周围的第一外围区域，第一外围区域用于对蒸镀材料进行阻挡；
第二掩膜板还包括围绕在缓冲区域周围的第二外围区域，
将第一掩膜板和第二掩膜板层叠设置在框架上的步骤还可以包括：
将第一掩膜板和第二掩膜板层叠设置在框架上，使第二外围区域在第一掩膜板上的正投影位于第一外围区域内。
在一个实施例中，第二外围区域内设置有蒸镀孔；或者，
第二外围区域内设置有第二凹槽。
在一些实施例中，缓冲区域内设置有第一凹槽，所有蒸镀孔的开口面的面积相等，所有凹槽的开口面的面积相等，任一蒸镀孔的开口面的面积等于任一凹槽的开口面的面积，和/或任一凹槽的深度大于或者等于第二掩膜板的厚度的一半且小于第二掩膜板的厚度。
在一些实施例中，开口区域和蒸镀区域的形状都为圆形，缓冲区域的形状为圆环形，缓冲区域的内环的半径与蒸镀区域的半径相等，和/或开口区域的半径大于缓冲区域的内环的半径且小于缓冲区域的外环的半径。
在一个实施例中，框架为金属框架，第二掩膜板为精细金属掩膜板，步骤 304包括：
将第一掩膜板和第二掩膜板分别焊接在框架上，使第一掩膜板和第二掩膜板层叠。
综上所述，本公开实施例提供的掩膜组件的制造方法，由于掩膜组件的蒸镀区域由第二掩膜板限定，第一掩膜板的开口区域的边界在第二掩膜板上的正投影位于第二掩膜板的围绕蒸镀区域的缓冲区域内，而缓冲区域用于对蒸镀材料进行阻挡，这样，由于缓冲区域的存在，在固定第二掩膜板时，开口区域位置的改变不会对蒸镀区域产生影响，因此，掩膜组件的对位精度较高，解决了掩膜组件的对位精度较低的问题，达到了提高掩膜组件的对位精度的效果。
请参考4，其示出了本公开实施例提供的另一种掩膜组件的制造方法的方法流程图，该制造方法可以用于制造图2B所示的掩膜组件01，参见图4，该掩膜组件的制造方法可以包括下述步骤：
步骤401、提供框架。
在本公开实施例中，框架的具体结构以及形成方法均可以参考相关技术，本公开实施例在此不再赘述。
步骤402、形成第一掩膜板，第一掩膜板包括开口区域和围绕在开口区域周围的第一外围区域，第一外围区域用于对蒸镀材料进行阻挡。
在一个示例中，第一掩膜板012可以为Open MASK，如图2C所示，第一掩膜板012包括开口区域0121和围绕在开口区域0121周围的第一外围区域0122，第一外围区域0122用于对蒸镀材料进行阻挡。示例地，第一掩膜板012的板面为矩形，开口区域0121可以为圆形，第一外围区域0122为该第一掩膜板012上除该开口区域0121之外的区域。
在本公开实施例中，第一掩膜板012可以包括第一掩膜板本体，第一掩膜板本体为不包括任何图形的矩形板，可以通过一次构图工艺对第一掩膜板本体进行处理得到第一掩膜板012。示例性地，一次构图工艺可以包括光刻胶涂覆、曝光、显影、刻蚀和光刻胶剥离，因此，通过一次构图工艺对第一掩膜板本体 进行处理得到第一掩膜板012可以包括：在第一掩膜板本体上涂覆一层具有一定厚度的光刻胶得到光刻胶层，采用具有相应图形的掩膜板对光刻胶层进行曝光，使光刻胶层形成完全曝光区和非曝光区，完全曝光区对应待形成的第一掩膜板的开口区域，非曝光区对应待形成的第一掩膜板的第一外围区域，之后采用显影工艺处理，使完全曝光区的光刻胶被完全去除，非曝光区的光刻胶全部保留，采用刻蚀工艺对第一掩膜板本体上完全曝光区对应的区域进行刻蚀，得到第一掩膜板的开口区域0121，之后剥离非曝光区的光刻胶得到第一掩膜板的第一外围区域0122，得到第一掩膜板的开口区域0121和第一外围区域0122之后，就得到了第一掩膜板012。
需要说明的是，本公开实施例是以采用正性光刻胶形成第一掩膜板012为例进行说明的，实际应用中，还可以采用负性光刻胶形成第一掩膜板012，本公开实施例对此不做限定。
还需要说明的是，该步骤402中形成第一掩膜板012时采用的具有相应图形的掩膜板与该第一掩膜板012不同，该具有相应图形的掩膜板可以是包括透光区域和遮光区域的掩膜板，本公开实施例在此不再赘述。
步骤403、形成第二掩膜板，第二掩膜板包括蒸镀区域、围绕在蒸镀区域周围的缓冲区域和围绕在缓冲区域周围的第二外围区域，蒸镀区域内设置有供蒸镀材料通过的蒸镀孔，缓冲区域用于对蒸镀材料进行阻挡。
在一些示例中，第二掩膜板011可以为FMM，如图2D所示，第二掩膜板011包括蒸镀区域0111、围绕在蒸镀区域0111周围的缓冲区域0112和围绕在缓冲区域0112周围的第二外围区域0113，第二掩膜板011的板面为矩形，蒸镀区域0111的形状可以为圆形，缓冲区域0112的形状为圆环形，第二外围区域0113为该第二掩膜板011上除该蒸镀区域0111和缓冲区域0112之外的区域。在本公开的一些实施例中，蒸镀区域0111内设置有供蒸镀材料通过的蒸镀孔K1，缓冲区域0112内设置有第一凹槽C，第二外围区域0113上设置有蒸镀孔K2，示例性地，蒸镀孔可以为圆形孔、矩形孔、方形孔或者其他形状 的孔，所有蒸镀孔的开口面的形状相同且面积相等，所有凹槽的开口面的形状相同且面积相等，任一蒸镀孔的开口面的面积等于任一凹槽的开口面的面积，和/或任一凹槽的深度大于或者等于第二掩膜板011的厚度的一半且小于第二掩膜板的厚度。
在本公开实施例中，第二掩膜板011可以包括第二掩膜板本体，第二掩膜板本体为不包括任何图形的矩形板，可以通过一次构图工艺对第二掩膜板本体进行处理得到第二掩膜板011。在一个示例中，一次构图工艺可以包括光刻胶涂覆、曝光、显影、刻蚀和光刻胶剥离，因此，通过一次构图工艺对第二掩膜板本体进行处理得到第二掩膜板011可以包括：在第二掩膜板本体上涂覆一层具有一定厚度的光刻胶得到光刻胶层，采用具有相应图形的灰色掩膜板或者半色调掩膜板对光刻胶层进行曝光，使光刻胶层形成完全曝光区、部分曝光区和非曝光区，完全曝光区对应待形成的第二掩膜板上的蒸镀孔，部分曝光区对应待形成的第二掩膜板上的凹槽，非曝光区对应其他区域，之后采用显影工艺处理，使完全曝光区的光刻胶被完全去除，部分曝光区的光刻胶被部分去除，非曝光区的光刻胶全部保留，采用刻蚀工艺对第二掩膜板本体上完全曝光区对应的区域进行刻蚀，得到第二掩膜板的蒸镀孔，之后可以采用显影、灰化或剥离等工艺去除部分曝光区的光刻胶，采用刻蚀工艺对第二掩膜板本体上部分曝光区对应的区域进行刻蚀，得到第二掩膜板的凹槽，之后剥离非曝光区的光刻胶得到第二掩膜板011。
需要说明的是，本公开实施例是以采用正性光刻胶形成第二掩膜板011为例进行说明的，实际应用中，还可以采用负性光刻胶形成第二掩膜板011，本公开实施例对此不做限定。
还需要说明的是，该步骤403是以通过一次构图工艺，采用灰色掩膜板或者半色调掩膜板形成第二掩膜板011为例进行说明的，实际应用中，还可以通过两次构图工艺形成第二掩膜板011，本公开实施例在此不再赘述。
步骤404、将第一掩膜板和第二掩膜板层叠设置在框架上，使开口区域的 边界在第二掩膜板的正投影位于缓冲区域内，第二外围区域在第一掩膜板上的正投影位于第一外围区域内。
其中，将第一掩膜板012和第二掩膜板011层叠设置在框架上后可以形成掩膜组件01，掩膜组件01的具体结构可以参考图2B，本公开实施例在此不再赘述。
在本公开的一些实施例中，框架的形状可以为矩形，第一掩膜板012和第二掩膜板011的形状都可以为矩形，且框架可以为金属框架，第一掩膜板012和第二掩膜板011的材质均可以为金属，因此，可以将第一掩膜板012和第二掩膜板011分别焊接在框架上，使第一掩膜板012和第二掩膜板011层叠。具体地，可以先将第一掩膜板012焊接在框架上，然后将第二掩膜板011焊接在框架上，使第二掩膜板011的缓冲区域的第一凹槽C的开口面位于第二掩膜板011远离第一掩膜板012的一面上，并使第二掩膜板011的第二外围区域0113在第一掩膜板012上的正投影位于第一掩膜板012的第一外围区域0122内。
在本公开的一些实施例中，第一掩膜板012的开口区域0121的形状为圆形，第二掩膜板011的蒸镀区域0111的形状为圆形，缓冲区域0112的形状为圆环形，缓冲区域0112的内环的半径与蒸镀区域0111的半径相等，和/或开口区域0121的半径大于缓冲区域0112的内环的半径且小于缓冲区域0112的外环的半径，本公开实施例在此不再赘述。
综上所述，本公开实施例提供的掩膜组件的制造方法，由于掩膜组件的蒸镀区域由第二掩膜板限定，第一掩膜板的开口区域的边界在第二掩膜板的正投影位于第二掩膜板的围绕蒸镀区域的缓冲区域内，而缓冲区域用于对蒸镀材料进行阻挡，这样，由于缓冲区域的存在，在固定第二掩膜板时，开口区域位置的改变不会对蒸镀区域产生影响，因此，掩膜组件的对位精度较高，解决了掩膜组件的对位精度较低的问题，达到了提高掩膜组件的对位精度的效果。
本公开实施例还提供了一种显示装置，该显示装置包括采用图2B所示的掩膜组件形成的图形，显示装置可以为：手表、电子纸、手机、平板电脑、电 视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
综上所述，本公开实施例提供的显示装置包括采用掩膜组件形成的图形，由于掩膜组件的蒸镀区域由第二掩膜板限定，第一掩膜板的开口区域的边界在第二掩膜板上的正投影位于第二掩膜板的围绕蒸镀区域的缓冲区域内，而缓冲区域用于对蒸镀材料进行阻挡，这样，由于缓冲区域的存在，在固定第二掩膜板时，开口区域位置的改变不会对蒸镀区域产生影响，因此，掩膜组件的对位精度较高，形成的图形的质量较好，显示装置的显示质量较好。
本领域普通技术人员可以理解实现上述实施例的全部或部分步骤可以通过硬件来完成，也可以通过程序来指令相关的硬件完成，所述的程序可以存储于一种计算机可读存储介质中，上述提到的存储介质可以是只读存储器，磁盘或光盘等。
以上所述仅为本公开的较佳实施例，并不用以限制本公开，凡在本公开的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本公开的保护范围之内。

Claims (19)

  1. 一种掩膜组件，包括：框架、第一掩膜板和第二掩膜板，
    所述第一掩膜板和所述第二掩膜板层叠设置在所述框架上；
    其中，所述第一掩膜板包括开口区域，所述第二掩膜板包括蒸镀区域和围绕在所述蒸镀区域周围的缓冲区域，所述蒸镀区域内设置有供蒸镀材料通过的第一蒸镀孔，所述缓冲区域用于对蒸镀材料进行阻挡，所述开口区域的边界在所述第二掩膜板上的正投影位于所述缓冲区域内。
  2. 根据权利要求1所述的掩膜组件，其中，
    缓冲区域内设置有被构造成减小缓冲区域与蒸镀区域之间的应力差的第一缓冲结构。
  3. 根据权利要求1或2所述的掩膜组件，其中所述缓冲区域内设置有第一凹槽。
  4. 根据权利要求3所述的掩膜组件，其中，
    所述第一凹槽的开口面位于所述第二掩膜板远离所述第一掩膜板的一面上。
  5. 根据权利要求1-4中任一项所述的掩膜组件，其中，所述缓冲区域的形状为环形。
  6. 根据权利要求1-5中任一项所述的掩膜组件，其中，
    所述第一掩膜板还包括围绕在所述开口区域周围的第一外围区域，所述第一外围区域用于对蒸镀材料进行阻挡；
    所述第二掩膜板还包括围绕在所述缓冲区域周围的第二外围区域，所述第 二外围区域在所述第一掩膜板上的正投影位于所述第一外围区域内。
  7. 根据权利要求6所述的掩膜组件，其中，
    所述第二外围区域内设置有被构造成减小第二外围区域与蒸镀区域之间的应力差的第二缓冲结构，该第二缓冲结构包括形成在第二外围区域内的第二蒸镀孔和/或第二凹槽。
  8. 根据权利要求1-7中任一项所述的掩膜组件，其中，
    所述缓冲区域内设置有多个第一凹槽，并且
    所述掩膜组件包括下述(1)至(9)中的至少一种：
    (1)所有所述蒸镀孔的开口面的面积相等；
    (2)所有凹槽的开口面的面积相等；
    (3)任一所述蒸镀孔的开口面的面积等于任一所述凹槽的开口面的面积；
    (4)任一所述凹槽的深度大于或者等于所述第二掩膜板的厚度的一半且小于所述第二掩膜板的厚度；
    (5)所述开口区域的形状为圆形；
    (6)所述蒸镀区域的形状为圆形；
    (7)所述缓冲区域的形状为圆环形；
    (8)所述缓冲区域的内环的半径与所述蒸镀区域的半径相等；以及
    (9)所述开口区域的半径大于所述缓冲区域的内环的半径且小于所述缓冲区域的外环的半径。
  9. 根据权利要求1至8中任一项所述的掩膜组件，其中，
    所述框架为金属框架，所述第二掩膜板为精细金属掩膜板，所述第一掩膜板和所述第二掩膜板分别焊接在所述框架上。
  10. 一种掩膜组件的制造方法，包括下述步骤：
    提供框架；
    形成第一掩膜板，所述第一掩膜板包括开口区域；
    形成第二掩膜板，所述第二掩膜板包括蒸镀区域和围绕在所述蒸镀区域周围的缓冲区域，所述蒸镀区域内设置有供蒸镀材料通过的蒸镀孔，所述缓冲区域用于对蒸镀材料进行阻挡；以及
    将所述第一掩膜板和所述第二掩膜板层叠设置在所述框架上，使所述开口区域的边界在所述第二掩膜板上的正投影位于所述缓冲区域内。
  11. 根据权利要求10所述的方法，其中形成第二掩膜板的步骤包括在缓冲区域内形成被构造成减小缓冲区域与蒸镀区域之间的应力差的第一缓冲结构。
  12. 根据权利要求10或11所述的方法，其中，所述缓冲区域内设置有第一凹槽。
  13. 根据权利要求12所述的方法，其中，
    所述第一凹槽的开口面位于所述第二掩膜板远离所述第一掩膜板的一面上。
  14. 根据权利要求10-13中任一项所述的方法，其中，所述缓冲区域的形状为环形。
  15. 根据权利要求10所述的方法，其中，
    所述第一掩膜板还包括围绕在所述开口区域周围的第一外围区域，所述第一外围区域用于对蒸镀材料进行阻挡；
    所述第二掩膜板还包括围绕在所述缓冲区域周围的第二外围区域，并且
    将所述第一掩膜板和所述第二掩膜板层叠设置在所述框架上的步骤还包 括：
    将所述第一掩膜板和所述第二掩膜板层叠设置在所述框架上，使所述第二外围区域在所述第一掩膜板上的正投影位于所述第一外围区域内。
  16. 根据权利要求15所述的方法，其中，所述第二外围区域内设置有被构造成减小第二外围区域与蒸镀区域之间的应力差的第二缓冲结构，该第二缓冲结构包括形成在第二外围区域内的第二蒸镀孔和/或第二凹槽。
  17. 根据权利要求15所述的方法，其中，
    所述缓冲区域内设置有多个第一凹槽，并且
    所述掩膜组件被制造成包括下述(1)至(9)中的至少一种：
    (1)所有所述蒸镀孔的开口面的面积相等；
    (2)所有凹槽的开口面的面积相等；
    (3)任一所述蒸镀孔的开口面的面积等于任一所述凹槽的开口面的面积；
    (4)任一所述凹槽的深度大于或者等于所述第二掩膜板的厚度的一半且小于所述第二掩膜板的厚度；
    (5)所述开口区域的形状为圆形；
    (6)所述蒸镀区域的形状为圆形；
    (7)所述缓冲区域的形状为圆环形；
    (8)所述缓冲区域的内环的半径与所述蒸镀区域的半径相等；以及
    (9)所述开口区域的半径大于所述缓冲区域的内环的半径，且小于所述缓冲区域的外环的半径。
  18. 根据权利要求10至17中任一项所述的方法，其中，
    所述框架为金属框架，所述第二掩膜板为精细金属掩膜板，并且
    将所述第一掩膜板和所述第二掩膜板层叠设置在所述框架上的步骤包括：
    将所述第一掩膜板和所述第二掩膜板分别焊接在所述框架上，使所述第一掩膜板和所述第二掩膜板层叠。
  19. 一种显示装置，包括采用权利要求1至9中任一项所述的掩膜组件形成的图形。
PCT/CN2017/084717 2016-06-15 2017-05-17 掩膜组件及其制造方法、显示装置 WO2017215399A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/745,401 US10648070B2 (en) 2016-06-15 2017-05-17 Mask assembly and method for manufacturing the same and display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610423043.X 2016-06-15
CN201610423043.XA CN106086781B (zh) 2016-06-15 2016-06-15 掩膜组件及其制造方法、显示装置

Publications (1)

Publication Number Publication Date
WO2017215399A1 true WO2017215399A1 (zh) 2017-12-21

Family

ID=57845914

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/084717 WO2017215399A1 (zh) 2016-06-15 2017-05-17 掩膜组件及其制造方法、显示装置

Country Status (3)

Country Link
US (1) US10648070B2 (zh)
CN (1) CN106086781B (zh)
WO (1) WO2017215399A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111492090A (zh) * 2017-12-25 2020-08-04 堺显示器制品株式会社 蒸镀掩模、蒸镀方法以及有机el显示设备的制造方法

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106086781B (zh) 2016-06-15 2018-09-11 京东方科技集团股份有限公司 掩膜组件及其制造方法、显示装置
CN108666420B (zh) * 2017-03-27 2021-01-22 京东方科技集团股份有限公司 掩模板及其制作方法
CN108666437B (zh) * 2017-04-01 2020-05-26 上海和辉光电有限公司 显示面板及其制作方法
CN206706184U (zh) * 2017-05-12 2017-12-05 京东方科技集团股份有限公司 掩模板以及掩模片
KR102418174B1 (ko) * 2017-07-05 2022-07-08 다이니폰 인사츠 가부시키가이샤 증착 마스크, 증착 마스크 장치, 증착 마스크의 제조 방법 및 증착 마스크 장치의 제조 방법
CN111095591A (zh) * 2017-09-04 2020-05-01 应用材料公司 用于高res fmm的fmm工艺
CN107400851B (zh) * 2017-09-25 2019-11-05 京东方科技集团股份有限公司 一种掩膜板图形的制备方法及掩膜板
CN107815641B (zh) * 2017-10-25 2020-05-19 信利（惠州）智能显示有限公司 掩膜板
CN107808936A (zh) * 2017-10-25 2018-03-16 信利（惠州）智能显示有限公司 掩膜装置
CN108281575B (zh) * 2018-01-26 2020-08-14 京东方科技集团股份有限公司 掩膜板及其制作方法
CN108468018B (zh) * 2018-03-28 2019-10-15 京东方科技集团股份有限公司 掩模板框架及其制作方法、蒸镀掩模板组件及蒸镀设备
WO2020158566A1 (ja) * 2019-01-31 2020-08-06 大日本印刷株式会社 蒸着マスク群、電子デバイスの製造方法及び電子デバイス
CN109750256B (zh) * 2019-03-25 2020-12-18 京东方科技集团股份有限公司 掩膜组件的制备方法、掩膜组件
CN109962096B (zh) * 2019-04-15 2021-02-23 京东方科技集团股份有限公司 显示背板及其制作方法、显示装置
CN110117768B (zh) * 2019-05-17 2021-02-26 京东方科技集团股份有限公司 掩膜装置
CN110838156A (zh) * 2019-11-06 2020-02-25 京东方科技集团股份有限公司 一种金属掩膜板的绘图方法及装置
CN110777328A (zh) * 2019-11-21 2020-02-11 昆山国显光电有限公司 一种掩膜版、蒸镀系统及掩膜版的制备方法
CN110838565B (zh) * 2019-11-26 2022-07-29 京东方科技集团股份有限公司 金属掩模版、显示面板和显示装置
CN111826608A (zh) * 2020-07-30 2020-10-27 昆山工研院新型平板显示技术中心有限公司 掩膜板、掩膜板的制备方法及蒸镀装置
CN111876725A (zh) * 2020-07-31 2020-11-03 京东方科技集团股份有限公司 组合掩膜板及其支撑掩膜板
KR20220055538A (ko) * 2020-10-26 2022-05-04 삼성디스플레이 주식회사 마스크 어셈블리 및 마스크 어셈블리의 제작 방법
CN116254503B (zh) * 2023-03-21 2024-05-07 京东方科技集团股份有限公司 一种金属屏蔽片掩膜板和蒸镀辅助设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101015234A (zh) * 2004-09-08 2007-08-08 东丽株式会社 有机电场发光装置及其制造方法
KR20100101436A (ko) * 2009-03-09 2010-09-17 삼성모바일디스플레이주식회사 더미 슬릿부를 차단하는 차단부를 구비한 고정세 증착 마스크, 상기 고정세 증착 마스크를 이용한 유기 발광 소자의 제조 방법, 및 상기 제조 방법에 의해 제조된 유기 발광 소자
CN104630705A (zh) * 2015-03-13 2015-05-20 合肥鑫晟光电科技有限公司 一种掩膜板及其制备方法
CN105039905A (zh) * 2015-04-28 2015-11-11 友达光电股份有限公司 掩膜
CN106086781A (zh) * 2016-06-15 2016-11-09 京东方科技集团股份有限公司 掩膜组件及其制造方法、显示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7282240B1 (en) * 1998-04-21 2007-10-16 President And Fellows Of Harvard College Elastomeric mask and use in fabrication of devices
US9231210B2 (en) * 2010-05-18 2016-01-05 Sharp Kabushiki Kaisha Manufacturing device and manufacturing method for organic EL element
CN103205695B (zh) * 2012-01-16 2015-11-25 昆山允升吉光电科技有限公司 一种蒸镀用掩模板及其制作工艺
KR20150019695A (ko) * 2013-08-14 2015-02-25 삼성디스플레이 주식회사 단위 마스크 및 마스크 조립체
CN103757589A (zh) * 2014-01-23 2014-04-30 上海和辉光电有限公司 掩膜装置、制造该掩膜装置的系统以及方法
CN104294212A (zh) * 2014-09-03 2015-01-21 安徽省大富光电科技有限公司 掩膜板组件
CN104393195B (zh) 2014-10-10 2016-03-30 深圳市华星光电技术有限公司 掩膜板、掩膜板的制造方法以及oled面板的制造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101015234A (zh) * 2004-09-08 2007-08-08 东丽株式会社 有机电场发光装置及其制造方法
KR20100101436A (ko) * 2009-03-09 2010-09-17 삼성모바일디스플레이주식회사 더미 슬릿부를 차단하는 차단부를 구비한 고정세 증착 마스크, 상기 고정세 증착 마스크를 이용한 유기 발광 소자의 제조 방법, 및 상기 제조 방법에 의해 제조된 유기 발광 소자
CN104630705A (zh) * 2015-03-13 2015-05-20 合肥鑫晟光电科技有限公司 一种掩膜板及其制备方法
CN105039905A (zh) * 2015-04-28 2015-11-11 友达光电股份有限公司 掩膜
CN106086781A (zh) * 2016-06-15 2016-11-09 京东方科技集团股份有限公司 掩膜组件及其制造方法、显示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111492090A (zh) * 2017-12-25 2020-08-04 堺显示器制品株式会社 蒸镀掩模、蒸镀方法以及有机el显示设备的制造方法

Also Published As

Publication number Publication date
US10648070B2 (en) 2020-05-12
CN106086781A (zh) 2016-11-09
CN106086781B (zh) 2018-09-11
US20180209028A1 (en) 2018-07-26

Similar Documents

Publication Publication Date Title
WO2017215399A1 (zh) 掩膜组件及其制造方法、显示装置
US11127763B2 (en) Display panel and manufacturing method thereof and display device
US10985348B2 (en) Display panel, manufacturing method thereof, and display device
US20240107824A1 (en) Display substrate and manufacturing method therefor, and display apparatus
CN109671726B (zh) 阵列基板及其制造方法、显示面板、显示装置
WO2018000808A1 (zh) 显示基板及其制作方法、显示装置
WO2020151448A1 (zh) 蒸镀方法、蒸镀掩膜模组、显示面板及显示装置
US9508867B2 (en) Thin film transistor, array substrate, method of fabricating same, and display device
US10381382B2 (en) Array substrate, method for manufacturing the same and display device
TWI470738B (zh) 顯示裝置的製造方法
US10768489B2 (en) Display panel with spacers and walls for the spacers, manufacturing method thereof and display device
US10488710B2 (en) Array substrate and method for manufacturing the same, and display apparatus
WO2019051931A1 (zh) 掩膜板及其制造方法、蒸镀方法
KR20180001639A (ko) 박막 증착용 마스크 어셈블리와, 이의 제조 방법
WO2021098635A1 (zh) 电子设备
US10453963B2 (en) Array substrate manufacturing method
WO2016155429A1 (zh) 显示基板及其制造方法、显示装置
WO2017181753A1 (zh) 阵列基板、显示面板、显示装置及阵列基板制作方法
US20200136081A1 (en) Electrode exhaust structure, electrode, display panel and manufacturing method therefor, and display apparatus
WO2021218413A1 (zh) 掩膜板、显示基板及其制作方法、显示装置
US9806109B2 (en) Half tone mask plate and method for manufacturing array substrate using the same
US10942403B2 (en) Display substrate and display apparatus
US20230180581A1 (en) Display substrate, fabrication method therefor, and display apparatus
CN211207024U (zh) 一种阵列基板、显示面板和显示装置
US20230167535A1 (en) Fine metal mask and manufacturing method thereof

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 15745401

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17812510

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17812510

Country of ref document: EP

Kind code of ref document: A1