WO2017199440A1 - 半導体コンプレッション成型用離型シート及びこれを用いて成型される半導体パッケージ - Google Patents
半導体コンプレッション成型用離型シート及びこれを用いて成型される半導体パッケージ Download PDFInfo
- Publication number
- WO2017199440A1 WO2017199440A1 PCT/JP2016/065070 JP2016065070W WO2017199440A1 WO 2017199440 A1 WO2017199440 A1 WO 2017199440A1 JP 2016065070 W JP2016065070 W JP 2016065070W WO 2017199440 A1 WO2017199440 A1 WO 2017199440A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- particles
- resin
- release sheet
- release layer
- release
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 86
- 238000000748 compression moulding Methods 0.000 title claims abstract description 25
- 239000002245 particle Substances 0.000 claims abstract description 121
- 229920005989 resin Polymers 0.000 claims description 44
- 239000011347 resin Substances 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 36
- 238000000465 moulding Methods 0.000 claims description 32
- 239000004925 Acrylic resin Substances 0.000 claims description 13
- 229920000178 Acrylic resin Polymers 0.000 claims description 12
- 230000006835 compression Effects 0.000 claims description 11
- 238000007906 compression Methods 0.000 claims description 11
- 229920006350 polyacrylonitrile resin Polymers 0.000 claims description 5
- 229920005990 polystyrene resin Polymers 0.000 claims description 5
- 229920006267 polyester film Polymers 0.000 claims description 4
- 229920005672 polyolefin resin Polymers 0.000 claims description 4
- 229920002050 silicone resin Polymers 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 124
- 238000000034 method Methods 0.000 description 24
- 239000003566 sealing material Substances 0.000 description 23
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 18
- -1 acryl Chemical group 0.000 description 13
- 238000011109 contamination Methods 0.000 description 11
- 239000011254 layer-forming composition Substances 0.000 description 11
- 239000003431 cross linking reagent Substances 0.000 description 9
- 229920006243 acrylic copolymer Polymers 0.000 description 8
- 239000000178 monomer Substances 0.000 description 8
- 238000001035 drying Methods 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 230000005484 gravity Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 150000003440 styrenes Chemical class 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 230000037303 wrinkles Effects 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- 229920001225 polyester resin Polymers 0.000 description 3
- 239000004645 polyester resin Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- DPBJAVGHACCNRL-UHFFFAOYSA-N 2-(dimethylamino)ethyl prop-2-enoate Chemical compound CN(C)CCOC(=O)C=C DPBJAVGHACCNRL-UHFFFAOYSA-N 0.000 description 2
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 2
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000010954 inorganic particle Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011146 organic particle Substances 0.000 description 2
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 1
- BOVQCIDBZXNFEJ-UHFFFAOYSA-N 1-chloro-3-ethenylbenzene Chemical compound ClC1=CC=CC(C=C)=C1 BOVQCIDBZXNFEJ-UHFFFAOYSA-N 0.000 description 1
- KTZVZZJJVJQZHV-UHFFFAOYSA-N 1-chloro-4-ethenylbenzene Chemical compound ClC1=CC=C(C=C)C=C1 KTZVZZJJVJQZHV-UHFFFAOYSA-N 0.000 description 1
- VTPNYMSKBPZSTF-UHFFFAOYSA-N 1-ethenyl-2-ethylbenzene Chemical compound CCC1=CC=CC=C1C=C VTPNYMSKBPZSTF-UHFFFAOYSA-N 0.000 description 1
- NVZWEEGUWXZOKI-UHFFFAOYSA-N 1-ethenyl-2-methylbenzene Chemical compound CC1=CC=CC=C1C=C NVZWEEGUWXZOKI-UHFFFAOYSA-N 0.000 description 1
- XHUZSRRCICJJCN-UHFFFAOYSA-N 1-ethenyl-3-ethylbenzene Chemical compound CCC1=CC=CC(C=C)=C1 XHUZSRRCICJJCN-UHFFFAOYSA-N 0.000 description 1
- JZHGRUMIRATHIU-UHFFFAOYSA-N 1-ethenyl-3-methylbenzene Chemical compound CC1=CC=CC(C=C)=C1 JZHGRUMIRATHIU-UHFFFAOYSA-N 0.000 description 1
- WHFHDVDXYKOSKI-UHFFFAOYSA-N 1-ethenyl-4-ethylbenzene Chemical compound CCC1=CC=C(C=C)C=C1 WHFHDVDXYKOSKI-UHFFFAOYSA-N 0.000 description 1
- JWVTWJNGILGLAT-UHFFFAOYSA-N 1-ethenyl-4-fluorobenzene Chemical compound FC1=CC=C(C=C)C=C1 JWVTWJNGILGLAT-UHFFFAOYSA-N 0.000 description 1
- LMAUULKNZLEMGN-UHFFFAOYSA-N 1-ethyl-3,5-dimethylbenzene Chemical compound CCC1=CC(C)=CC(C)=C1 LMAUULKNZLEMGN-UHFFFAOYSA-N 0.000 description 1
- IGGDKDTUCAWDAN-UHFFFAOYSA-N 1-vinylnaphthalene Chemical compound C1=CC=C2C(C=C)=CC=CC2=C1 IGGDKDTUCAWDAN-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- SJIXRGNQPBQWMK-UHFFFAOYSA-N 2-(diethylamino)ethyl 2-methylprop-2-enoate Chemical compound CCN(CC)CCOC(=O)C(C)=C SJIXRGNQPBQWMK-UHFFFAOYSA-N 0.000 description 1
- QHVBLSNVXDSMEB-UHFFFAOYSA-N 2-(diethylamino)ethyl prop-2-enoate Chemical compound CCN(CC)CCOC(=O)C=C QHVBLSNVXDSMEB-UHFFFAOYSA-N 0.000 description 1
- NCEGJIHRQBRVJQ-UHFFFAOYSA-N 2-amino-3-[3-[2-(phosphonomethyl)phenyl]phenyl]propanoic acid Chemical compound OC(=O)C(N)CC1=CC=CC(C=2C(=CC=CC=2)CP(O)(O)=O)=C1 NCEGJIHRQBRVJQ-UHFFFAOYSA-N 0.000 description 1
- SBYMUDUGTIKLCR-UHFFFAOYSA-N 2-chloroethenylbenzene Chemical compound ClC=CC1=CC=CC=C1 SBYMUDUGTIKLCR-UHFFFAOYSA-N 0.000 description 1
- GPOGMJLHWQHEGF-UHFFFAOYSA-N 2-chloroethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCl GPOGMJLHWQHEGF-UHFFFAOYSA-N 0.000 description 1
- WHBAYNMEIXUTJV-UHFFFAOYSA-N 2-chloroethyl prop-2-enoate Chemical compound ClCCOC(=O)C=C WHBAYNMEIXUTJV-UHFFFAOYSA-N 0.000 description 1
- DSIWLDCXHHMNQL-UHFFFAOYSA-N 2-ethenyl-1,4-difluorobenzene Chemical compound FC1=CC=C(F)C(C=C)=C1 DSIWLDCXHHMNQL-UHFFFAOYSA-N 0.000 description 1
- WDQMWEYDKDCEHT-UHFFFAOYSA-N 2-ethylhexyl 2-methylprop-2-enoate Chemical compound CCCCC(CC)COC(=O)C(C)=C WDQMWEYDKDCEHT-UHFFFAOYSA-N 0.000 description 1
- DUCAVBJYSSNCJG-UHFFFAOYSA-N 2-fluoroethyl prop-2-enoate Chemical compound FCCOC(=O)C=C DUCAVBJYSSNCJG-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- YXYJVFYWCLAXHO-UHFFFAOYSA-N 2-methoxyethyl 2-methylprop-2-enoate Chemical compound COCCOC(=O)C(C)=C YXYJVFYWCLAXHO-UHFFFAOYSA-N 0.000 description 1
- HFCUBKYHMMPGBY-UHFFFAOYSA-N 2-methoxyethyl prop-2-enoate Chemical compound COCCOC(=O)C=C HFCUBKYHMMPGBY-UHFFFAOYSA-N 0.000 description 1
- RUMACXVDVNRZJZ-UHFFFAOYSA-N 2-methylpropyl 2-methylprop-2-enoate Chemical compound CC(C)COC(=O)C(C)=C RUMACXVDVNRZJZ-UHFFFAOYSA-N 0.000 description 1
- CFVWNXQPGQOHRJ-UHFFFAOYSA-N 2-methylpropyl prop-2-enoate Chemical compound CC(C)COC(=O)C=C CFVWNXQPGQOHRJ-UHFFFAOYSA-N 0.000 description 1
- WWJCRUKUIQRCGP-UHFFFAOYSA-N 3-(dimethylamino)propyl 2-methylprop-2-enoate Chemical compound CN(C)CCCOC(=O)C(C)=C WWJCRUKUIQRCGP-UHFFFAOYSA-N 0.000 description 1
- UFQHFMGRRVQFNA-UHFFFAOYSA-N 3-(dimethylamino)propyl prop-2-enoate Chemical compound CN(C)CCCOC(=O)C=C UFQHFMGRRVQFNA-UHFFFAOYSA-N 0.000 description 1
- UJTRCPVECIHPBG-UHFFFAOYSA-N 3-cyclohexylpyrrole-2,5-dione Chemical compound O=C1NC(=O)C(C2CCCCC2)=C1 UJTRCPVECIHPBG-UHFFFAOYSA-N 0.000 description 1
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- VEPKQEUBKLEPRA-UHFFFAOYSA-N VX-745 Chemical compound FC1=CC(F)=CC=C1SC1=NN2C=NC(=O)C(C=3C(=CC=CC=3Cl)Cl)=C2C=C1 VEPKQEUBKLEPRA-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- AOJOEFVRHOZDFN-UHFFFAOYSA-N benzyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC1=CC=CC=C1 AOJOEFVRHOZDFN-UHFFFAOYSA-N 0.000 description 1
- GCTPMLUUWLLESL-UHFFFAOYSA-N benzyl prop-2-enoate Chemical compound C=CC(=O)OCC1=CC=CC=C1 GCTPMLUUWLLESL-UHFFFAOYSA-N 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- YACLQRRMGMJLJV-UHFFFAOYSA-N chloroprene Chemical compound ClC(=C)C=C YACLQRRMGMJLJV-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- KRJIBMFDBVWHBJ-UHFFFAOYSA-N cycloheptyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1CCCCCC1 KRJIBMFDBVWHBJ-UHFFFAOYSA-N 0.000 description 1
- VLIHGIDKOZKVBS-UHFFFAOYSA-N cycloheptyl prop-2-enoate Chemical compound C=CC(=O)OC1CCCCCC1 VLIHGIDKOZKVBS-UHFFFAOYSA-N 0.000 description 1
- OIWOHHBRDFKZNC-UHFFFAOYSA-N cyclohexyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1CCCCC1 OIWOHHBRDFKZNC-UHFFFAOYSA-N 0.000 description 1
- KBLWLMPSVYBVDK-UHFFFAOYSA-N cyclohexyl prop-2-enoate Chemical compound C=CC(=O)OC1CCCCC1 KBLWLMPSVYBVDK-UHFFFAOYSA-N 0.000 description 1
- WRAABIJFUKKEJQ-UHFFFAOYSA-N cyclopentyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1CCCC1 WRAABIJFUKKEJQ-UHFFFAOYSA-N 0.000 description 1
- BTQLDZMOTPTCGG-UHFFFAOYSA-N cyclopentyl prop-2-enoate Chemical compound C=CC(=O)OC1CCCC1 BTQLDZMOTPTCGG-UHFFFAOYSA-N 0.000 description 1
- GTBGXKPAKVYEKJ-UHFFFAOYSA-N decyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCOC(=O)C(C)=C GTBGXKPAKVYEKJ-UHFFFAOYSA-N 0.000 description 1
- FWLDHHJLVGRRHD-UHFFFAOYSA-N decyl prop-2-enoate Chemical compound CCCCCCCCCCOC(=O)C=C FWLDHHJLVGRRHD-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- OCDWICPYKQMQSQ-UHFFFAOYSA-N docosyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCCCCCCCCCCOC(=O)C(C)=C OCDWICPYKQMQSQ-UHFFFAOYSA-N 0.000 description 1
- KHAYCTOSKLIHEP-UHFFFAOYSA-N docosyl prop-2-enoate Chemical compound CCCCCCCCCCCCCCCCCCCCCCOC(=O)C=C KHAYCTOSKLIHEP-UHFFFAOYSA-N 0.000 description 1
- GMSCBRSQMRDRCD-UHFFFAOYSA-N dodecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCOC(=O)C(C)=C GMSCBRSQMRDRCD-UHFFFAOYSA-N 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- FKIRSCKRJJUCNI-UHFFFAOYSA-N ethyl 7-bromo-1h-indole-2-carboxylate Chemical compound C1=CC(Br)=C2NC(C(=O)OCC)=CC2=C1 FKIRSCKRJJUCNI-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- MDNFYIAABKQDML-UHFFFAOYSA-N heptyl 2-methylprop-2-enoate Chemical compound CCCCCCCOC(=O)C(C)=C MDNFYIAABKQDML-UHFFFAOYSA-N 0.000 description 1
- SCFQUKBBGYTJNC-UHFFFAOYSA-N heptyl prop-2-enoate Chemical compound CCCCCCCOC(=O)C=C SCFQUKBBGYTJNC-UHFFFAOYSA-N 0.000 description 1
- ZNAOFAIBVOMLPV-UHFFFAOYSA-N hexadecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCCCCOC(=O)C(C)=C ZNAOFAIBVOMLPV-UHFFFAOYSA-N 0.000 description 1
- LNCPIMCVTKXXOY-UHFFFAOYSA-N hexyl 2-methylprop-2-enoate Chemical compound CCCCCCOC(=O)C(C)=C LNCPIMCVTKXXOY-UHFFFAOYSA-N 0.000 description 1
- LNMQRPPRQDGUDR-UHFFFAOYSA-N hexyl prop-2-enoate Chemical group CCCCCCOC(=O)C=C LNMQRPPRQDGUDR-UHFFFAOYSA-N 0.000 description 1
- NGYRYRBDIPYKTL-UHFFFAOYSA-N icosyl prop-2-enoate Chemical compound CCCCCCCCCCCCCCCCCCCCOC(=O)C=C NGYRYRBDIPYKTL-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 238000007759 kiss coating Methods 0.000 description 1
- 238000002356 laser light scattering Methods 0.000 description 1
- PBOSTUDLECTMNL-UHFFFAOYSA-N lauryl acrylate Chemical compound CCCCCCCCCCCCOC(=O)C=C PBOSTUDLECTMNL-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000007974 melamines Chemical class 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- MDYPDLBFDATSCF-UHFFFAOYSA-N nonyl prop-2-enoate Chemical compound CCCCCCCCCOC(=O)C=C MDYPDLBFDATSCF-UHFFFAOYSA-N 0.000 description 1
- HMZGPNHSPWNGEP-UHFFFAOYSA-N octadecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCCCCCCOC(=O)C(C)=C HMZGPNHSPWNGEP-UHFFFAOYSA-N 0.000 description 1
- FSAJWMJJORKPKS-UHFFFAOYSA-N octadecyl prop-2-enoate Chemical compound CCCCCCCCCCCCCCCCCCOC(=O)C=C FSAJWMJJORKPKS-UHFFFAOYSA-N 0.000 description 1
- NWAHZAIDMVNENC-UHFFFAOYSA-N octahydro-1h-4,7-methanoinden-5-yl methacrylate Chemical compound C12CCCC2C2CC(OC(=O)C(=C)C)C1C2 NWAHZAIDMVNENC-UHFFFAOYSA-N 0.000 description 1
- NZIDBRBFGPQCRY-UHFFFAOYSA-N octyl 2-methylprop-2-enoate Chemical compound CCCCCCCCOC(=O)C(C)=C NZIDBRBFGPQCRY-UHFFFAOYSA-N 0.000 description 1
- 229940065472 octyl acrylate Drugs 0.000 description 1
- ANISOHQJBAQUQP-UHFFFAOYSA-N octyl prop-2-enoate Chemical compound CCCCCCCCOC(=O)C=C ANISOHQJBAQUQP-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- GYDSPAVLTMAXHT-UHFFFAOYSA-N pentyl 2-methylprop-2-enoate Chemical compound CCCCCOC(=O)C(C)=C GYDSPAVLTMAXHT-UHFFFAOYSA-N 0.000 description 1
- ULDDEWDFUNBUCM-UHFFFAOYSA-N pentyl prop-2-enoate Chemical compound CCCCCOC(=O)C=C ULDDEWDFUNBUCM-UHFFFAOYSA-N 0.000 description 1
- WRAQQYDMVSCOTE-UHFFFAOYSA-N phenyl prop-2-enoate Chemical compound C=CC(=O)OC1=CC=CC=C1 WRAQQYDMVSCOTE-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001490 poly(butyl methacrylate) polymer Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- BOQSSGDQNWEFSX-UHFFFAOYSA-N propan-2-yl 2-methylprop-2-enoate Chemical compound CC(C)OC(=O)C(C)=C BOQSSGDQNWEFSX-UHFFFAOYSA-N 0.000 description 1
- LYBIZMNPXTXVMV-UHFFFAOYSA-N propan-2-yl prop-2-enoate Chemical compound CC(C)OC(=O)C=C LYBIZMNPXTXVMV-UHFFFAOYSA-N 0.000 description 1
- NHARPDSAXCBDDR-UHFFFAOYSA-N propyl 2-methylprop-2-enoate Chemical compound CCCOC(=O)C(C)=C NHARPDSAXCBDDR-UHFFFAOYSA-N 0.000 description 1
- PNXMTCDJUBJHQJ-UHFFFAOYSA-N propyl prop-2-enoate Chemical compound CCCOC(=O)C=C PNXMTCDJUBJHQJ-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- ATZHWSYYKQKSSY-UHFFFAOYSA-N tetradecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCCOC(=O)C(C)=C ATZHWSYYKQKSSY-UHFFFAOYSA-N 0.000 description 1
- XZHNPVKXBNDGJD-UHFFFAOYSA-N tetradecyl prop-2-enoate Chemical compound CCCCCCCCCCCCCCOC(=O)C=C XZHNPVKXBNDGJD-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/14—Layered products comprising a layer of synthetic resin next to a particulate layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/16—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by features of a layer formed of particles, e.g. chips, powder or granules
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
- H01L21/566—Release layers for moulds, e.g. release layers, layers against residue during moulding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2264/00—Composition or properties of particles which form a particulate layer or are present as additives
- B32B2264/02—Synthetic macromolecular particles
- B32B2264/0214—Particles made of materials belonging to B32B27/00
- B32B2264/0228—Vinyl resin particles, e.g. polyvinyl acetate, polyvinyl alcohol polymers or ethylene-vinyl acetate copolymers
- B32B2264/0235—Aromatic vinyl resin, e.g. styrenic (co)polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2264/00—Composition or properties of particles which form a particulate layer or are present as additives
- B32B2264/02—Synthetic macromolecular particles
- B32B2264/0214—Particles made of materials belonging to B32B27/00
- B32B2264/025—Acrylic resin particles, e.g. polymethyl methacrylate or ethylene-acrylate copolymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2264/00—Composition or properties of particles which form a particulate layer or are present as additives
- B32B2264/02—Synthetic macromolecular particles
- B32B2264/0214—Particles made of materials belonging to B32B27/00
- B32B2264/0257—Polyolefin particles, e.g. polyethylene or polypropylene homopolymers or ethylene-propylene copolymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/748—Releasability
Definitions
- the present invention relates to a release sheet for molding a semiconductor compression and a semiconductor package molded using the same.
- a semiconductor chip is usually sealed with a resin for shielding and protecting from the outside air, and mounted on a substrate as a molded product called a package.
- a molded product is molded as a package molded product for each chip connected through a runner which is a flow path of a sealing resin.
- the mold release property from the mold is obtained by the structure of the mold, addition of a release agent to the sealing resin, and the like.
- packages such as Ball Grid Array (BGA), Quad Flat Non-leaded (QFN), and wafer level chip size package (WL-CSP) have increased. ing.
- the resin mold release is used to improve the mold release property of the package.
- a film is used (for example, see JP-A No. 2002-158242). Such a molding method using a release film is referred to as “film assist molding”.
- the above release film When the above release film is used, it is possible to easily release the sealing material and the mold of the semiconductor package when the semiconductor package is resin-molded. However, the appearance of the molded package surface is not uniform, and there is a possibility that a flow trace of the sealing material is seen, or the molded semiconductor package surface is contaminated from the release film.
- the BGA method and WL-CSP method as the molding method is changed from the conventional transfer mold method to the compression mold method, the size of one shot has increased, the uniformity of the molded package surface appearance, sealing The required level of material flow traces is increasing.
- a semiconductor package when a semiconductor package is resin-molded by a compression molding method, it is possible to easily release the sealing material and the mold without damaging the semiconductor package.
- a release sheet for molding a semiconductor compression which has excellent uniformity in the appearance of the surface of the semiconductor package and can reduce contamination from the release sheet on the surface of the molded semiconductor package.
- a semiconductor package molded using the release sheet for molding a semiconductor compression there is provided.
- the present invention includes the following aspects. ⁇ 1> a release layer containing particles; A base material layer; Including A release sheet for molding a semiconductor compression, wherein the content of the particles in the release layer is 5% by volume to 65% by volume. ⁇ 2> The release sheet for semiconductor compression molding according to ⁇ 1>, wherein an average particle diameter of the particles is 1 ⁇ m to 55 ⁇ m. ⁇ 3> The mold release sheet for semiconductor compression molding according to ⁇ 1> or ⁇ 2>, wherein the particles are resin particles.
- ⁇ 4> The release sheet for semiconductor compression molding according to ⁇ 3>, wherein the resin particles include at least one selected from the group consisting of an acrylic resin, a polyolefin resin, a polystyrene resin, a polyacrylonitrile resin, and a silicone resin.
- the resin particles include at least one selected from the group consisting of an acrylic resin, a polyolefin resin, a polystyrene resin, a polyacrylonitrile resin, and a silicone resin.
- ⁇ 5> The mold release sheet for semiconductor compression molding according to any one of ⁇ 1> to ⁇ 4>, wherein the base material layer is a polyester film.
- ⁇ 6> A semiconductor package molded using the release sheet for molding a semiconductor compression according to any one of ⁇ 1> to ⁇ 5>.
- the sealing material and the mold can be easily released without damaging the semiconductor package, and the molded semiconductor
- a release sheet for molding a semiconductor compression that has excellent uniformity in package surface appearance and can reduce contamination from the release sheet on the surface of the molded semiconductor package.
- a semiconductor package molded using the release sheet for molding a semiconductor compression there is provided a semiconductor package molded using the release sheet for molding a semiconductor compression.
- a numerical range indicated by using “to” indicates a range including the numerical values described before and after “to” as the minimum value and the maximum value, respectively.
- the amount of each component in the composition means the total amount of the plurality of substances present in the composition unless there is a specific notice when there are a plurality of substances corresponding to each component in the composition.
- the “step” is not limited to an independent step, and is included in the term if the intended action of the step is achieved even when it cannot be clearly distinguished from other steps.
- the “layer” and the “film” include a configuration formed in a part in addition to a configuration formed in the entire surface when observed as a plan view.
- “(meth) acryl” means at least one of “acryl” and “methacryl”
- “(meth) acrylate” means at least one of “acrylate” and “methacrylate”.
- the upper limit value or the lower limit value described in one numerical range is replaced with the upper limit value or the lower limit value of another numerical range described. May be. Further, in the numerical ranges described in this specification, the upper limit value or the lower limit value of the numerical range may be replaced with the values shown in the examples.
- the average thickness of a layer or film is a value given as an arithmetic average value obtained by measuring the thicknesses of five layers of the target layer or film.
- the thickness of the layer or film can be measured using a micrometer or the like. If the thickness of the layer or film can be measured directly, it is measured using a micrometer.
- the thickness may be measured by observing the cross section of the release sheet using an electron microscope.
- the “average particle size” is determined as a particle size (50% D) at which accumulation from the small particle size side becomes 50% in a volume cumulative particle size distribution curve by a laser diffraction / scattering particle size distribution measurement method. .
- it can be measured using a particle size distribution measuring apparatus using a laser light scattering method (eg, Shimadzu Corporation, “SALD-3000”).
- the release sheet for semiconductor compression molding (hereinafter also referred to as “release sheet”) includes a release layer containing particles and a base material layer, and the content of the particles in the release layer is 5% by volume or more. It is a release sheet for semiconductor compression molding which is 65 volume%. More specifically, the release sheet has a two-layer structure including a release layer in contact with a molded semiconductor package on one side of a base layer that is in contact with a mold used in resin molding of the semiconductor package.
- the release sheet enables easy release of the sealing material and the mold without damaging the semiconductor package when the semiconductor package is molded by compression molding.
- it is possible to improve the uniformity of the appearance of the surface of the semiconductor package and to reduce contamination from the release sheet on the surface of the molded semiconductor package.
- the reason for this is not clear, but is presumed as follows.
- the release sheet is sufficient for the shape of the molding die from the viewpoint of suppressing the occurrence of shape defects such as wrinkles in the molded semiconductor package. It is required to have a follow-up property that fits. Furthermore, if an excessive force is applied when the semiconductor package is taken out from the molding die, the semiconductor package is likely to be damaged.
- the release sheet is also required to have sufficient releasability with respect to the semiconductor package.
- the release sheet of the present specification has different functions, namely, a release layer excellent in releasability for a sealing resin (for example, epoxy resin) for a semiconductor package and a base material layer excellent in followability for a mold for molding 2
- a release layer excellent in releasability for a sealing resin for example, epoxy resin
- the particle diameter, shape, and the like of the particles can be easily selected, and it becomes easy to adjust the degree of variation in the roughness of the outer surface of the release layer.
- the particles are resin particles, the resin particles are excellent in adhesiveness with other components contained in the release layer, so it is difficult to drop off from the release layer, and it is assumed that the contamination of the semiconductor package can be suppressed. Is done.
- the release sheet includes a release layer containing particles (hereinafter also referred to as “specific release layer”), and the content of the particles in the specific release layer is 5% by volume to 65% by volume.
- grains contained in a mold release layer is not specifically limited, Any of an inorganic particle and an organic particle may be sufficient.
- the material of the inorganic particles include alumina, aluminum hydroxide, boron nitride, silicon oxide, graphite and the like.
- the organic particles include resin particles. From the viewpoint of improving adhesion with other components contained in the release layer, the particles are preferably resin particles. When the particles are resin particles, the adhesion between the particles and other components contained in the release layer is improved, the particles are less likely to fall off the release layer, and contamination of the semiconductor package is suppressed.
- the resin particles preferably include at least one selected from the group consisting of acrylic resins, polyolefin resins, polystyrene resins, polyacrylonitrile resins, and silicone resins. From the viewpoint of releasability with respect to the semiconductor package, the resin particles more preferably include at least one selected from an acrylic resin, a polystyrene resin, and a polyacrylonitrile resin. From the viewpoint of the uniformity of the package surface appearance, the resin particles are preferably insoluble or hardly soluble in an organic solvent (for example, toluene, methyl ethyl ketone, or ethyl acetate) that can be used in the preparation of the release layer forming composition. .
- an organic solvent for example, toluene, methyl ethyl ketone, or ethyl acetate
- insoluble or hardly soluble in an organic solvent means that resin particles are dispersed in an organic solvent such as toluene in a gel fraction test based on JIS K6769 (2013) or ISO 15875-2 (2003) at 50 ° C.
- the gel fraction after holding for 24 hours is 97% or more.
- acrylic resins include (co) polymers of (meth) acrylic monomers, specifically (meth) acrylic resins, (meth) acrylic ester resins (for example, alkyl (meth) acrylates). Resin, dimethylaminoethyl (meth) acrylate resin) and the like.
- (meth) acrylic monomers include methyl acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, n-propyl acrylate, n-propyl methacrylate, isopropyl acrylate, isopropyl methacrylate, and n-acrylate.
- the polyolefin resin is not particularly limited as long as it is a (co) polymer of an olefin monomer or an alkene monomer. Specific examples include polyethylene, polypropylene, polymethylpentene, and the like. Examples of polystyrene resins include (co) polymers of styrene or styrene derivatives.
- styrene derivatives include alkyl-substituted styrene having an alkyl chain such as ⁇ -methylstyrene, 4-methylstyrene, 2-methylstyrene, 3-methylstyrene, 2-ethylstyrene, 3-ethylstyrene, 4-ethylstyrene, and the like.
- polyacrylonitrile resins include (co) polymers of acrylonitrile monomers. From the viewpoint of suppressing the solubility of the resin particles in the organic solvent, the resin contained in the resin particles is preferably a crosslinked resin.
- the average particle diameter of the particles is preferably 1 ⁇ m to 55 ⁇ m. If the average particle diameter of the particles is 1 ⁇ m or more, it is possible to sufficiently form irregularities on the surface of the specific release layer, improving the uniformity of the appearance of the molded semiconductor package surface, and the flow of the sealing material It tends to be suppressed. Further, if the average particle diameter of the particles is 55 ⁇ m or less, it is not necessary to excessively increase the thickness of the specific release layer in order to fix the particles in the specific release layer, which is preferable from the viewpoint of cost.
- the upper limit of the average particle diameter of the particles is preferably 55 ⁇ m and more preferably 50 ⁇ m from the viewpoint of the semiconductor package surface appearance.
- the lower limit of the average particle diameter of the particles is more preferably 3 ⁇ m, and even more preferably 10 ⁇ m, from the viewpoint of cost.
- the shape of the particles contained in the specific release layer is not particularly limited, and may be any of a spherical shape, an elliptical shape, an indefinite shape, and the like.
- the particles include tuftic series such as tuftic FH-S010 (Toyobo Co., Ltd.), which are acrylic resin particles.
- the content of particles contained in the specific release layer is 5% to 65% by volume.
- the content of the particles is 5% by volume or more, it is possible to sufficiently form irregularities on the surface of the specific release layer, improving the uniformity of the surface appearance of the molded semiconductor package, and the flow trace of the sealing material There is a tendency that a sufficient effect of suppressing the above is obtained.
- the lower limit of the particle content is preferably 10% by volume, and more preferably 20% by volume.
- the upper limit of the particle content is preferably 60% by volume, and more preferably 50% by volume.
- the content rate of the particles can be calculated as a ratio of particles per unit volume by, for example, observing a cross section of the specific release layer of the release sheet with a scanning electron microscope (SEM). Specifically, it can be calculated by the following method. First, the cross section of the specific release layer is observed with an SEM, and the number and particle diameter of particles included in an arbitrary area (hereinafter also referred to as “specific area”) in the cross section are measured. Furthermore, an arbitrary volume (hereinafter also referred to as “specific volume”) is set based on the specific area, and the number of particles contained in the specific volume is calculated. Further, the volume per particle is calculated based on the particle diameter of the particle. Then, from the calculated number of particles and the volume per particle, the total volume of particles contained in the specific volume is calculated, and by dividing the layer volume of the particles by the specific volume, The volume content of the particles contained in can be calculated.
- SEM scanning electron microscope
- the mass (Wc) of the specific release layer at 25 ° C. is measured, the specific release layer is dissolved in an organic solvent such as toluene, and the mass (Wf) of the remaining particles at 25 ° C. is determined. taking measurement. Subsequently, the specific gravity (df) of the particle
- Vc Volume of release layer (cm 3 )
- Wc Mass of release layer
- dc specific gravity of the release layer (g / cm 3 )
- Vf Volume of particles (cm 3 )
- Wf mass of particles
- df specific gravity of particles (g / cm 3 )
- Vr Volume ratio of particles
- the specific release layer in this measurement method may be peeled off from the release sheet, or may be prepared separately for this measurement method.
- the specific release layer may further contain a resin component. By including the resin component, the particles are fixed in the specific release layer.
- the resin component of the specific release layer is not particularly limited.
- the resin component is preferably an acrylic resin or a silicone resin from the viewpoint of releasability from a semiconductor package, heat resistance, and the like, and is a cross-linked acrylic resin (hereinafter also referred to as “cross-linked acrylic copolymer”). It is more preferable.
- Acrylic resin is mainly composed of low glass transition temperature (Tg) monomer such as butyl acrylate, ethyl acrylate, 2-ethylhexyl acrylate, etc., such as acrylic acid, methacrylic acid, hydroxyethyl methacrylate, hydroxyethyl acrylate, acrylamide, acrylonitrile, etc.
- Tg low glass transition temperature
- An acrylic copolymer obtained by copolymerizing with a functional group monomer is preferred.
- the crosslinked acrylic copolymer can be produced by crosslinking the monomer using a crosslinking agent.
- the crosslinking agent used in the production of the crosslinked acrylic copolymer include known crosslinking agents such as isocyanate compounds, melamine compounds, and epoxy compounds.
- the cross-linking agent is more preferably a trifunctional or tetrafunctional polyfunctional cross-linking agent in order to form a network structure that gently spreads in the acrylic resin.
- the cross-linked acrylic copolymer produced using the cross-linking agent as described above has a network structure that is gently spread, if this cross-linked acrylic polymer is used as the resin component of the specific release layer, Since the extensibility of the release layer is improved and inhibition of the extensibility of the base material layer is suppressed, the followability of the release sheet with respect to the mold during compression molding can be improved.
- the amount of the crosslinking agent used in the production of the cross-linked acrylic copolymer is preferably 3 parts by mass to 100 parts by mass with respect to 100 parts by mass of the acrylic copolymer. More preferably, it is 70 parts by mass.
- the amount of the crosslinking agent is 3 parts by mass or more, the resin component strength is ensured, so that contamination can be prevented. If the amount is 100 parts by mass or less, the flexibility of the crosslinked acrylic copolymer is improved and the mold release is performed. The stretchability of the layer is improved.
- the specific release layer may further contain a solvent, an anchoring improver, a cross-linking accelerator, an antistatic agent, a colorant, and the like as necessary as long as the effect of the present invention is not inhibited.
- the thickness of the specific release layer is not particularly limited, and is appropriately set in consideration of the relationship with the average particle diameter of the particles used.
- the thickness of the specific release layer is preferably 0.1 ⁇ m to 100 ⁇ m, and more preferably 1 ⁇ m to 50 ⁇ m. If the thickness of the specific release layer is extremely thinner than the average particle size of the particles used, it becomes difficult to fix the particles in the specific release layer, and the possibility that the particles fall off increases, and the molded semiconductor package May cause surface contamination.
- the thickness of the specific release layer in this specification means a dry thickness, and the specific release layer of the release sheet can be measured by the method for measuring the thickness of the layer.
- the outer surface of the specific release layer (the surface opposite to the surface facing the base material layer) preferably has irregularities.
- the surface roughness of the specific release layer can be evaluated by arithmetic average roughness (Ra) or ten-point average roughness (Rz).
- Arithmetic average roughness (Ra) and ten-point average roughness (Rz) are measured using, for example, a surface roughness measuring device (for example, Kosaka Laboratory Ltd., model number SE-3500) with a stylus tip diameter of 2 ⁇ m, It may be a value obtained by analyzing a result measured under conditions of a feed rate of 0.5 mm / s and a scanning distance of 8 mm according to JIS B0601 (2013) or ISO 4287 (1997).
- the arithmetic release roughness (Ra) of the specific release layer is preferably 0.5 ⁇ m to 5 ⁇ m, and the ten-point average roughness (Rz) is preferably 5 ⁇ m to 50 ⁇ m. preferable.
- the surface roughness of the specific release layer can be adjusted within the above range.
- the release sheet has a base material layer. It does not specifically limit as a base material layer, It can select suitably from the resin containing base material layers currently used in the said technical field. From the viewpoint of improving the followability of the release sheet to the shape of the mold, it is preferable to use a resin-containing base material layer having excellent stretchability.
- the base material layer preferably has heat resistance equal to or higher than this temperature in consideration that the molding of the sealing material is performed at a high temperature (about 100 ° C. to 200 ° C.). In order to suppress the occurrence of wrinkles of the sealing resin, tearing of the release sheet, etc. when the release sheet is attached to the mold and the resin being molded flows, the elastic modulus and elongation at high temperatures are suppressed. It is important to select the base material layer in consideration of the above.
- the material of the base material layer is preferably a polyester resin from the viewpoint of heat resistance and elastic modulus at high temperature.
- the polyester resin include polyethylene terephthalate resin, polyethylene naphthalate resin and polybutylene terephthalate resin, and copolymers and modified resins thereof.
- a base material layer what formed the polyester resin into the sheet form is preferable, it is more preferable that a base material layer is a polyester film, and it is a biaxially stretched polyester film from a viewpoint of the followable
- the thickness of the base material layer is not particularly limited, and is preferably 5 ⁇ m to 100 ⁇ m, and more preferably 10 ⁇ m to 70 ⁇ m.
- the thickness is 5 ⁇ m or more, the handleability of the release sheet is excellent and wrinkles tend not to occur.
- the thickness is 100 ⁇ m or less, the followability to the mold at the time of molding is excellent, and thus wrinkles and the like of the molded semiconductor package tend to be suppressed.
- the base material layer is a layer in contact with the mold surface, and depending on the material used, a greater peeling force may be required to peel the release sheet from the mold.
- a mold release sheet so that a mold release sheet may be easily peeled from a metal mold
- a satin finish for example, satin finish or matte is used to improve the releasability from the mold.
- the material of the second release layer is not particularly limited as long as it is a material satisfying heat resistance, releasability from the mold, and the like, and the same material as the specific release layer may be used.
- the thickness of the second release layer is not particularly limited, but is preferably 0.1 ⁇ m to 100 ⁇ m.
- a layer such as an antistatic layer or a colored layer may be provided.
- the release sheet can be produced by a known method.
- a release sheet can be produced by applying a release layer-forming composition containing 5% to 65% by volume of particles to the total solid content on one side of the base material layer and drying.
- the release layer-forming composition may contain a resin component and other components added as desired.
- the method for adjusting the release layer forming composition is not particularly limited, and examples thereof include a method of dispersing particles in a solvent, and a known composition adjusting method can be used.
- the solvent used for the preparation of the release layer forming composition is not particularly limited, and is preferably an organic solvent capable of dispersing particles and dissolving a resin component. Examples of the organic solvent include toluene, methyl ethyl ketone, and ethyl acetate.
- the method for applying the release layer forming composition to one surface of the base material layer is not particularly limited, and a known coating method such as a roll coating method, a bar coating, or a kiss coating can be used.
- a known coating method such as a roll coating method, a bar coating, or a kiss coating
- the release layer forming composition is applied, it is applied so that the thickness of the dried composition layer (release layer) is 0.1 ⁇ m to 100 ⁇ m.
- the method for drying the applied release layer forming composition is not particularly limited, and a known drying method can be used. For example, a method of drying at 50 to 150 ° C. for 0.1 to 60 minutes may be used.
- the release sheet for compression molding can be used for molding a semiconductor package, and can be particularly suitably used for compression molding.
- a release sheet is disposed in a mold of a compression molding apparatus, and the release sheet is made to follow the shape of the mold by vacuum suction or the like.
- a semiconductor package sealing material for example, epoxy resin
- the semiconductor chip is placed on the mold, and the mold is compressed while heating to cure the sealing material. Is molded.
- the mold is opened and the molded semiconductor package is taken out.
- the release sheet since the release sheet is adsorbed to the mold in the compression molding, the release sheet is required to have excellent followability to the shape of the mold.
- die can be improved more by using resin excellent in a drawability as a base material layer.
- the release sheet for compression molding of this specification is a semiconductor package in a peeling process after molding by mounting the semiconductor so that the specific release layer surface is in contact with the semiconductor package (molded product) when molding the semiconductor by compression molding. It is easy to release the release sheet from the mold, and it is possible to easily release the sealing material and the mold without damaging the semiconductor package. The flow trace of the stop material is also suppressed, and contamination of the molded package surface from the film can also be suppressed.
- Example 1 10 parts by mass of Coronate L (Nippon Polyurethane Industry Co., Ltd., trade name) as a cross-linking agent with 100 parts by mass of acrylic resin (Imperial Chemical Industry Co., Ltd .: WS-023) and tuftic as particles (C) 10 parts by mass of FH-S010 (Toyobo Co., Ltd., trade name, acrylic particles, average particle size 10 ⁇ m) was added to toluene to give a toluene solution with a solid content of 15% by mass, and a release layer forming composition was prepared. Prepared.
- a biaxially stretched polyethylene terephthalate film (Unitika Ltd .: S-25) having a thickness of 25 ⁇ m as a substrate layer was subjected to corona treatment. Thereafter, on one side of the biaxially stretched polyethylene terephthalate film, using a roll coater, the release layer forming composition is applied and dried so that the average thickness after drying is 10 ⁇ m, and a release layer is formed. A release sheet was obtained. It was 10 volume% when the content rate of the particle
- This release sheet is mounted on the upper mold of a compression molding mold in which a semiconductor bare chip is set in the lower mold, fixed in a vacuum, and then clamped to form a sealing material (Hitachi Chemical Co., Ltd .: trade name “CEL- 9750ZHF10 ”) was molded (compression molding) to obtain a semiconductor package.
- the mold temperature was 180 ° C.
- the molding pressure was 6.86 MPa (70 kgf / cm 2 )
- the molding time was 180 seconds.
- Example 2 is the same as Example 1 except that the thickness of layer A after drying, the presence or absence of a release layer, the type or content of particles (C) are changed as shown in Tables 1 and 2 below. Release sheets of 9 to 9 and Comparative Examples 1 to 3 were prepared and evaluated. The evaluation results are shown in Tables 1 and 2.
- the particles (C) shown in Tables 1 and 2 are as follows. ⁇ Tuftic FH-S015 (Toyobo Co., Ltd., trade name) ⁇ Tuftic FH-S020 (Toyobo Co., Ltd., trade name) ⁇ Tuffic FH-S050 (Toyobo Co., Ltd., trade name) ⁇ SX-500H (Soken Chemical Co., Ltd., trade name) ⁇ Tuffic ASF-7 (Toyobo Co., Ltd., trade name) ⁇ E606 (Toray Dow Corning Co., Ltd., trade name) ⁇ BM30X-12 (Sekisui Plastics Co., Ltd., trade name) ⁇ HPS-3500 (Toagosei Co., Ltd., trade name)
- PMMA means polymethyl methacrylate
- PMBA means polybutyl methacrylate.
- the release sheets of Examples 1 to 9 have good releasability from the molded sealing material, excellent uniformity of the molded package surface appearance, and molding.
- the dropout of particles (C) on the package surface was also suppressed.
- a release sheet was produced and evaluated in the same manner as in Example 1 except that the content of the particles (C) was 1% by volume. In either case, a flow trace was observed, and the surface appearance uniformity was not sufficiently obtained.
- Comparative Example 1 having no release layer, the sealing material and the release sheet could not be peeled off after molding.
- Comparative Example 2 in which a release layer containing no particles was used, the molded package surface appearance was non-uniform and a flow trace of the sealing material was seen.
- Comparative Example 3 in which the content rate of the particles exceeded 65% by volume, dropping of the particles was observed.
- the release sheet according to the embodiment of the present invention when used, when the semiconductor package is resin-molded, the sealing material and the mold are easily released without damaging the semiconductor package. Therefore, it is possible to provide a release film that is excellent in uniformity of the appearance of the molded package surface and in which contamination of the molded package surface from the film is suppressed.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Laminated Bodies (AREA)
- Casting Or Compression Moulding Of Plastics Or The Like (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
Abstract
Description
一方、パッケージの小型化、多ピン化等の要請から、Ball Grid Array(BGA)方式、Quad Flat Non-leaded(QFN)方式、ウエハレベルChip Size Package(WL-CSP)方式等のパッケージが増加している。QFN方式では、スタンドオフの確保及び端子部への封止材バリ発生を防止するため、またBGA方式及びWL-CSP方式では、金型からのパッケージの離型性向上のため、樹脂製離型フィルムが用いられる(例えば、特開2002-158242号公報参照)。このように離型フィルムを使用する成型方法を、「フィルムアシスト成型」という。
また、BGA方式及びWL-CSP方式で、従来のトランスファーモールド方式からコンプレッションモールド方式へと成形方法が変更されるに従い、1ショットの大サイズ化が進み、成形したパッケージ表面外観の均一性、封止材のフロー跡等の要求レベルが高くなってきている。
<1> 粒子を含む離型層と、
基材層と、
を含み、
前記離型層中の前記粒子の含有率が5体積%~65体積%である半導体コンプレッション成型用離型シート。
<2> 前記粒子の平均粒子径が1μm~55μmである<1>に記載の半導体コンプレッション成型用離型シート。
<3> 前記粒子が樹脂粒子である<1>又は<2>に記載の半導体コンプレッション成型用離型シート。
<4> 前記樹脂粒子が、アクリル樹脂、ポリオレフィン樹脂、ポリスチレン樹脂、ポリアクリロニトリル樹脂及びシリコーン樹脂からなる群より選択される少なくとも1種を含む<3>に記載の半導体コンプレッション成型用離型シート。
<5> 前記基材層が、ポリエステルフィルムである<1>~<4>のいずれか1つに記載の半導体コンプレッション成型用離型シート。
<6> <1>~<5>のいずれか1つに記載の半導体コンプレッション成型用離型シートを用いて成型される半導体パッケージ。
本明細書において「~」を用いて示された数値範囲は、「~」の前後に記載される数値をそれぞれ最小値及び最大値として含む範囲を示す。
本明細書において組成物中の各成分の量は、組成物中に各成分に該当する物質が複数存在する場合、特に断らない限り、組成物中に存在する当該複数の物質の合計量を意味する。
本明細書において「工程」とは、独立した工程だけではなく、他の工程と明確に区別できない場合であってもその工程の所期の作用が達成されれば、本用語に含まれる。
本明細書において「層」及び「膜」とは、平面図として観察したときに、全面に形成されている形状の構成に加え、一部に形成されている形状の構成も包含される。
本明細書において、「(メタ)アクリル」とは「アクリル」及び「メタクリル」の少なくとも一方を意味し、「(メタ)アクリレート」とは「アクリレート」及び「メタクリレート」の少なくとも一方を意味する。
また、本明細書中に段階的に記載されている数値範囲において、一つの数値範囲で記載された上限値又は下限値は、他の段階的な記載の数値範囲の上限値又は下限値に置き換えてもよい。また、本明細書中に記載されている数値範囲において、その数値範囲の上限値又は下限値は、実施例に示されている値に置き換えてもよい。
層又は膜の厚みは、マイクロメーター等を用いて測定することができる。層又は膜の厚みを直接測定可能な場合には、マイクロメーターを用いて測定する。一方、1つの層の厚み又は複数の層の総厚みを測定する場合には、電子顕微鏡を用いて、離型シートの断面を観察することで測定してもよい。
半導体コンプレッション成型用離型シート(以下、「離型シート」とも称する)は、粒子を含む離型層と、基材層と、を含み、離型層中の粒子の含有率が5体積%~65体積%である半導体コンプレッション成型用離型シートである。
より詳細には、離型シートは、半導体パッケージの樹脂成型において使用される金型と接触させる基材層の片面に、成型される半導体パッケージと接触する離型層を備える2層構造を有する。
この理由は明らかではないが、以下のように推察される。
半導体パッケージを成型する際に従来の離型シートを使用する場合、成型される半導体パッケージにシワ等の形状不具合が発生することを抑制する観点から、離型シートは成型用金型の形状に充分合うような追従性を有することが求められる。更に、成型用金型から半導体パッケージを取り出す際に過剰な力を入れると半導体パッケージが破損しやすいため、離型シートは半導体パッケージに対して充分な離型性を有することも求められる。
本明細書の離型シートは、半導体パッケージ用の封止樹脂(例えばエポキシ樹脂)に対する離型性に優れる離型層及び成型用金型に対する追従性に優れる基材層という、異なる機能を有する2種の層を有することにより、成型用金型に対する追従性を維持しつつ、成型される半導体パッケージからの離型性を向上することができると推察される。
更に、本明細書の離型シートでは、離型層が特定の含有率で粒子を含むことにより、離型層の外表面(半導体パッケージに対向する面)が粗くなり、成型される半導体パッケージの表面が粗くなることで、封止材のフロー跡が低減され、パッケージ表面外観の均一性を向上することができると推察される。また、粒子の粒子径、形状等を容易に選択でき、離型層の外表面の粗さのバラつきの程度を調整することが容易になる。更に、粒子が樹脂粒子である場合、樹脂粒子は離型層に含まれるその他の成分との密着性に優れるため、離型層から脱落し難く、半導体パッケージの汚染を抑制することができると推察される。
離型シートは、粒子を含む離型層(以下、「特定離型層」とも称する)を含み、特定離型層中の粒子の含有率は5体積%~65体積%である。
離型層に含まれる粒子の種類は特に限定されず、無機粒子及び有機粒子のいずれでもよい。無機粒子の材質としては、アルミナ、水酸化アルミニウム、窒化ホウ素、酸化ケイ素、黒鉛等が挙げられる。有機粒子としては樹脂粒子が挙げられる。
離型層に含まれるその他の成分との密着性向上の観点からは、粒子は樹脂粒子であることが好ましい。粒子が樹脂粒子である場合、粒子と離型層に含まれるその他の成分との密着性が向上し、粒子が離型層から脱落し難くなり、半導体パッケージの汚染が抑制される。
樹脂粒子は、アクリル樹脂、ポリオレフィン樹脂、ポリスチレン樹脂、ポリアクリロニトリル樹脂及びシリコーン樹脂からなる群より選択される少なくとも1種を含むことが好ましい。半導体パッケージに対する離型性の観点からは、樹脂粒子は、アクリル樹脂、ポリスチレン樹脂及びポリアクリロニトリル樹脂から選択される少なくとも1種を含むことがより好ましい。
パッケージ表面外観の均一性の観点から、樹脂粒子は、離型層形成用組成物の調製に使用され得る有機溶媒(例えば、トルエン、メチルエチルケトン、又は酢酸エチル)に不溶性又は難溶性であることが好ましい。ここで、有機溶媒に不溶性又は難溶性とは、JIS K6769(2013)又はISO 15875-2(2003)に準拠するゲル分率試験において、トルエン等の有機溶媒中に樹脂粒子を分散して50℃で24時間保持した後のゲル分率が97%以上であることをいう。
(メタ)アクリル単量体としては、アクリル酸メチル、メタクリル酸メチル、アクリル酸エチル、メタクリル酸エチル、アクリル酸n-プロピル、メタクリル酸n-プロピル、アクリル酸イソプロピル、メタクリル酸イソプロピル、アクリル酸n-ブチル、メタクリル酸n-ブチル、アクリル酸イソブチル、メタクリル酸イソブチル、アクリル酸sec-ブチル、メタクリル酸sec-ブチル、アクリル酸tert-ブチル、メタクリル酸tert-ブチル、アクリル酸ペンチル、メタクリル酸ペンチル、アクリル酸ヘキシル、メタクリル酸ヘキシル、アクリル酸ヘプチル、メタクリル酸ヘプチル、アクリル酸2-エチルヘキシル、メタクリル酸2-エチルヘキシル、アクリル酸オクチル、メタクリル酸オクチル、アクリル酸ノニル、メタクリル酸ノニル、アクリル酸デシル、メタクリル酸デシル、アクリル酸ドデシル、メタクリル酸ドデシル、アクリル酸テトラデシル、メタクリル酸テトラデシル、アクリル酸ヘキサデシル、メタクリル酸ヘキサデシル、アクリル酸オクタデシル、メタクリル酸オクタデシル、アクリル酸エイコシル、メタクリル酸エイコシル、アクリル酸ドコシル、メタクリル酸ドコシル、アクリル酸シクロペンチル、メタクリル酸シクロペンチル、アクリル酸シクロヘキシル、メタクリル酸シクロヘキシル、アクリル酸シクロヘプチル、メタクリル酸シクロヘプチル、アクリル酸ベンジル、メタクリル酸ベンジル、アクリル酸フェニル、メタクリル酸フェニル、アクリル酸メトキシエチル、メタクリル酸メトキシエチル、アクリル酸ジメチルアミノエチル、メタクリル酸ジメチルアミノエチル、アクリル酸ジエチルアミノエチル、メタクリル酸ジエチルアミノエチル、アクリル酸ジメチルアミノプロピル、メタクリル酸ジメチルアミノプロピル、アクリル酸2-クロロエチル、メタクリル酸2-クロロエチル、アクリル酸2-フルオロエチル、メタクリル酸2-フルオロエチル、スチレン、α-メチルスチレン、シクロヘキシルマレイミド、アクリル酸ジシクロペンタニル、メタクリル酸ジシクロペンタニル、ビニルトルエン、塩化ビニル、酢酸ビニル、N-ビニルピロリドン、ブタジエン、イソプレン、クロロプレン等が挙げられる。これらは単独で又は2種類以上を組み合わせて使用される。
ポリオレフィン樹脂としては、オレフィン単量体又はアルケン単量体の(共)重合体であれば特に限定されない。具体的には、ポリエチレン、ポリプロピレン、ポリメチルペンテン等が挙げられる。
ポリスチレン樹脂の例としては、スチレン又はスチレン誘導体の(共)重合体が挙げられる。スチレン誘導体としては、α-メチルスチレン、4-メチルスチレン、2-メチルスチレン、3-メチルスチレン、2-エチルスチレン、3-エチルスチレン、4-エチルスチレン等のアルキル鎖を持つアルキル置換スチレン、2-クロロスチレン、3-クロロスチレン、4-クロロスチレン等のハロゲン置換スチレン、4-フルオロスチレン、2,5-ジフルオロスチレン等のフッ素置換スチレン、ビニルナフタレンなどが挙げられる。
ポリアクリロニトリル樹脂の例としては、アクリロニトリル単量体の(共)重合体が挙げられる。
有機溶媒に対する樹脂粒子の溶解性を抑制する観点からは、樹脂粒子に含まれる樹脂は架橋樹脂であることが好ましい。
粒子の平均粒子径の上限は、半導体パッケージ表面外観の観点から、55μmであることが好ましく、50μmであることがより好ましい。粒子の平均粒子径の下限は、コストの観点から、3μmであることがより好ましく、10μmであることが更に好ましい。
粒子の含有率が5体積%以上であると、特定離型層表面に充分に凹凸を形成することが可能であり、成型した半導体パッケージ表面外観の均一性が向上して封止材のフロー跡を抑制する効果が充分得られる傾向にある。この観点から、粒子の含有率の下限は10体積%であることが好ましく、20体積%であることがより好ましい。
また、粒子の含有率が65体積%以下であると、特定離型層中の後述する樹脂成分により粒子が固定されやすくなり、粒子の脱落の可能性が低下し、成型した半導体パッケージ表面への汚染を抑制でき、且つ経済的にも好ましい傾向にある。この観点から、粒子の含有率の上限は60体積%であることが好ましく、50体積%であることがより好ましい。
まず、特定離型層の断面をSEMで観察し、この断面における任意の面積(以下、「特定面積」とも称する)に含まれる粒子の数及び粒子径を測定する。更に、上記特定面積に基づいて任意の体積(以下、「特定体積」とも称する)を設定し、この特定体積中に含まれる粒子の数を算出する。更に、粒子の粒子径に基づいて、粒子1つ当たりの体積を算出する。そして、算出された粒子の数及び粒子1つ当たりの体積から、特定体積中に含まれる粒子の総体積を算出し、この粒子の層体積を特定体積で除することにより、特定離型層中に含まれる粒子の体積含有率を算出することができる。
(式1)
Vc=Wc/dc
Vf=Wf/df
Vr=Vf/Vc
Wc:離型層の質量(g)
dc:離型層の比重(g/cm3)
Vf:粒子の体積(cm3)
Wf:粒子の質量(g)
df:粒子の比重(g/cm3)
Vr:粒子の体積比率
尚、この測定方法における特定離型層は、離型シートから剥離したものであってもよく、この測定方法用に別途作製したものであってもよい。
特定離型層は更に樹脂成分を含んでいてよい。樹脂成分を含むことにより、粒子が特定離型層内に固定される。
特定離型層の樹脂成分は特に限定されない。樹脂成分は、半導体パッケージとの離型性、耐熱性等の観点から、アクリル樹脂又はシリコーン樹脂であることが好ましく、架橋型アクリル樹脂(以下、「架橋型アクリル共重合体」とも称する)であることがより好ましい。
架橋型アクリル共重合体の製造に使用される架橋剤としては、イソシアネート化合物、メラミン化合物、エポキシ化合物等の公知の架橋剤が挙げられる。また、アクリル樹脂中に緩やかに広がった網目状構造を形成するために、架橋剤は3官能、4官能等の多官能架橋剤であることがより好ましい。
この観点から、架橋型アクリル共重合体の製造において使用される架橋剤の量は、アクリル共重合体100質量部に対して、3質量部~100質量部であることが好ましく、5質量部~70質量部であることがより好ましい。架橋剤の量が3質量部以上であると樹脂成分の強度が確保されるため汚染を防ぐことができ、100質量部以下であると架橋型アクリル共重合体の柔軟性が向上し、離型層の延伸性が向上する。
特定離型層は、本発明の効果が阻害されない限り、必要に応じて、溶媒、アンカリング向上剤、架橋促進剤、帯電防止剤、着色剤等を更に含んでいてもよい。
特定離型層の厚みは特に限定されず、使用する粒子の平均粒子径との関係を考慮して適宜設定される。特定離型層の厚みは、0.1μm~100μmであることが好ましく、1μm~50μmであることがより好ましい。
特定離型層の厚みが使用する粒子の平均粒子径より極端に薄い場合、特定離型層中に粒子を固定することが困難になり、粒子が脱落する可能性が高くなり、成型した半導体パッケージ表面への汚染の原因となる可能性がある。また、特定離型層の厚みが使用する粒子の平均粒子径より極端に厚い場合、特定離型層表面に充分に凹凸を形成することが困難となり、成型した半導体パッケージ表面外観の均一性を向上する効果、封止材のフロー跡を抑制する効果等が充分得られない可能性がある。また、経済的にも不利益である。
尚、本明細書における特定離型層の厚みとは乾燥厚みを意味し、離型シートの特定離型層を上記の層の厚みの測定方法で測定することができる。
特定離型層の外表面(基材層と対向する面とは反対側の面)は凹凸を有することが好ましい。特定離型層の表面粗さは、算術平均粗さ(Ra)又は十点平均粗さ(Rz)により評価することができる。
算術平均粗さ(Ra)及び十点平均粗さ(Rz)は、例えば、表面粗さ測定装置(例えば、(株)小坂研究所、型番SE-3500)を用いて、触針先端径2μm、送り速さ0.5mm/s及び走査距離8mmの条件で測定した結果を、JIS B0601(2013)又はISO 4287(1997)により解析して得た値でもよい。パッケージ表面外観の均一性の観点から、特定離型層の算術平均粗さ(Ra)は0.5μm~5μmであることが好ましく、十点平均粗さ(Rz)は5μm~50μmであることが好ましい。
粒子の平均粒子径と特定離型層の厚みとを調整することにより、特定離型層の表面粗さを上記範囲内に調整することができる。
離型シートは基材層を有する。基材層としては特に限定されず、当該技術分野で使用されている樹脂含有基材層から適宜選択することができる。金型の形状に対する離型シートの追従性を向上する観点からは、延伸性に優れる樹脂含有基材層を使用することが好ましい。
基材層は、封止材の成形が高温(100℃~200℃程度)で行われることを考慮すると、この温度以上の耐熱性を有することが望ましい。また、離型シートを金型に装着する際及び成形中の樹脂が流動する際に封止樹脂のシワ、離型シートの破れ等の発生を抑制するためには、高温時の弾性率、伸び等を考慮して基材層を選択することが重要である。
基材層としては、ポリエステル樹脂をシート状に成型したものが好ましく、基材層がポリエステルフィルムであることがより好ましく、金型への追従性の観点からは、2軸延伸ポリエステルフィルムであることが好ましい。
基材層の厚みは特に限定されず、5μm~100μmであることが好ましく、10μm~70μmであることがより好ましい。厚みが5μm以上であると、離型シートの取扱い性に優れ、シワが生じ難い傾向にある。厚みが100μm以下であると、成型時の金型への追従性に優れるため、成型された半導体パッケージのシワ等の発生が抑制される傾向にある。
基材層は金型表面に接触する層であり、用いる材料によっては離型シートを金型から剥離するためにより大きな剥離力が必要となることがある。この様に金型から剥離しにくい材料を基材層に使用する場合には、金型から離型シートを剥離しやすくするように離型シートを調整することが好ましい。例えば、基材層の特定離型層と接する反対の面、つまり基材層の金型側の面に、金型からの離型性を向上させるために梨地加工(例えば、サテン仕上げ、又はマット仕上げ)等の表面加工をしたり、新たに別の離型層(第2離型層)を設けてもよい。第2離型層の材料としては、耐熱性、金型からの剥離性等を満たす材料であれば特に限定せず、特定離型層と同じ材料を使用してもよい。第2離型層の厚みは、特に限定されないが、0.1μm~100μmであることが好ましい。
離型シートは、公知の方法により製造することができる。例えば、総固形分に対して5体積%~65体積%の粒子を含む離型層形成用組成物を基材層の片面に付与し、乾燥することにより、離型シートを製造することができる。離型層形成用組成物は、樹脂成分及び所望により添加されるその他の成分を含んでいてもよい。
離型層形成用組成物の調整方法は特に制限されず、例えば、粒子を溶媒に分散する方法が挙げられ、公知の組成物調整方法を使用することができる。
離型層形成用組成物の調製に使用する溶媒は特に限定されず、粒子を分散可能であり、樹脂成分を溶解可能である有機溶媒であることが好ましい。有機溶媒としては、トルエン、メチルエチルケトン、酢酸エチル等が挙げられる。
離型層形成用組成物を基材層の片面に付与する方法は特に限定されず、ロールコート法、バーコート、キスコート等の公知の塗布方法を使用することができる。尚、離型層形成用組成物を付与する際には、乾燥後の組成物層(離型層)の厚みが0.1μm~100μmとなるように付与する。
付与された離型層形成用組成物を乾燥する方法は特に限定されず、公知の乾燥方法を使用することができる。例えば、50℃~150℃で0.1分~60分乾燥させる方法でもよい。
コンプレッション成型用離型シートは、半導体パッケージの成型に使用することができ、特にコンプレッション成型に好適に使用することができる。
通常、半導体パッケージのコンプレッション成型では、コンプレッション成型装置の金型に離型シートを配置し、真空吸着等により離型シートを金型の形状に追従させる。その後、半導体パッケージの封止材(例えば、エポキシ樹脂等)を金型に入れ、半導体チップをその上に配置し、加熱しながら金型を圧縮することにより封止材を硬化させて、半導体パッケージを成型する。その後、金型を開けて、成型された半導体パッケージを取り出す。
アクリル樹脂(帝国化学産業(株):WS-023)100質量部に対し、架橋剤としてのコロネートL(日本ポリウレタン工業(株)、商品名)を10質量部と、粒子(C)としてのタフチックFH-S010(東洋紡(株)、商品名、アクリル粒子、平均粒子径10μm)を10質量部と、をトルエンに添加して固形分15質量%のトルエン溶液とし、離型層形成用組成物を調製した。
基材層としての、厚みが25μmの2軸延伸ポリエチレンテレフタレートフィルム(ユニチカ(株):S-25)をコロナ処理した。その後、上記2軸延伸ポリエチレンテレフタレートフィルムの片面に、ロールコータを用いて、乾燥後の平均厚みが10μmになるように離型層形成用組成物を塗布及び乾燥して離型層を形成し、離型シートを得た。
得られた離型シートの離型層中の粒子(C)の含有率をSEMによる断面観察により測定したところ、10体積%であった。
この離型シートを、下型に半導体ベアチップをセットしたコンプレッション成型金型の上型に装着し、真空で固定した後、型締めし、封止材(日立化成(株):商品名「CEL-9750ZHF10」)を成型(コンプレッション成型)して半導体パッケージを得た。金型温度は180℃、成形圧力は6.86MPa(70kgf/cm2)、成形時間は180秒とした。
離型シートの成型後の封止材との離型性、成型した半導体パッケージ表面の外観の均一性(封止材のフロー跡の有無)及び成型した半導体パッケージ表面への粒子(C)の脱落の有無(汚染の有無)を下記の方法で評価した。評価結果を表1及び表2に示す。
成型後の離型シートの封止材との離型性の指標として、剥離角度180°、剥離速度300mm/分で剥離試験を行なったときの剥離力を測定し、下記の基準で評価した。
A:0.5N/50mm未満
B:0.5N/50mm以上5.0N/50mm未満
C:5.0N/50mm以上
半導体パッケージ表面の封止材のフロー跡の有無を、目視及び光学顕微鏡(100倍)で観察し、下記の基準で評価した。
A:目視及び顕微鏡観察のいずれでもフロー跡が観察されない。
B:目視ではフロー跡が観察されず、顕微鏡観察ではわずかに観察される。
C:目視及び顕微鏡観察のいずれでもフロー跡が観察される。
半導体パッケージ表面への粒子(C)の脱落の有無を、目視及び光学顕微鏡(100倍)で観察し、下記の基準で評価した。
A:目視及び顕微鏡観察のいずれでも粒子(C)の脱落が観察されない。
B:目視では粒子(C)の脱落が観察されず、顕微鏡観察ではわずかに観察される。
C:目視及び顕微鏡観察のいずれでも粒子(C)の脱落が観察される。
A層の乾燥後の厚み、離型層の有無、粒子(C)の種類又は含有率を下記表1及び表2に示すように変更した以外は、実施例1と同様にして、実施例2~9及び比較例1~3の離型シートを作製し評価した。評価結果を表1及び表2に示す。
・タフチックFH-S015(東洋紡(株)、商品名)
・タフチックFH-S020(東洋紡(株)、商品名)
・タフチックFH-S050(東洋紡(株)、商品名)
・SX-500H(綜研化学(株)、商品名)
・タフチックASF-7(東洋紡(株)、商品名)
・E606(東レ・ダウコーニング(株)、商品名)
・BM30X-12(積水化成品工業(株)、商品名)
・HPS-3500(東亞合成(株)、商品名)
尚、表1及び表2中の「PMMA」はポリメタクリル酸メチルを意味し、「PMBA」はポリメタクリル酸ブチルを意味する。
表2中の「-」は、材料を使用していないこと、又は特性が検出可能ではないことを表す。
尚、表1及び表2には示していないが、粒子(C)の含有率を1体積%とした以外は実施例1と同様にして離型シートを製造し評価したところ、目視及び顕微鏡観察のいずれでもフロー跡が観察され、表面外観の均一性が充分得られなかった。
Claims (6)
- 粒子を含む離型層と、
基材層と、
を含み、
前記離型層中の前記粒子の含有率が5体積%~65体積%である半導体コンプレッション成型用離型シート。 - 前記粒子の平均粒子径が1μm~55μmである請求項1に記載の半導体コンプレッション成型用離型シート。
- 前記粒子が樹脂粒子である請求項1又は請求項2に記載の半導体コンプレッション成型用離型シート。
- 前記樹脂粒子が、アクリル樹脂、ポリオレフィン樹脂、ポリスチレン樹脂、ポリアクリロニトリル樹脂及びシリコーン樹脂からなる群より選択される少なくとも1種を含む請求項3に記載の半導体コンプレッション成型用離型シート。
- 前記基材層が、ポリエステルフィルムである請求項1~請求項4のいずれか1項に記載の半導体コンプレッション成型用離型シート。
- 請求項1~請求項5のいずれか1項に記載の半導体コンプレッション成型用離型シートを用いて成型される半導体パッケージ。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018518055A JPWO2017199440A1 (ja) | 2016-05-20 | 2016-05-20 | 半導体コンプレッション成型用離型シート及びこれを用いて成型される半導体パッケージ |
PCT/JP2016/065070 WO2017199440A1 (ja) | 2016-05-20 | 2016-05-20 | 半導体コンプレッション成型用離型シート及びこれを用いて成型される半導体パッケージ |
US16/302,994 US20190275763A1 (en) | 2016-05-20 | 2016-05-20 | Mold release sheet for semiconductor compression molding and semiconductor package which is molded using same |
SG11201810215RA SG11201810215RA (en) | 2016-05-20 | 2016-05-20 | Mold release sheet for semiconductor compression molding and semiconductor package which is molded using same |
CN201680085883.8A CN109155257B (zh) | 2016-05-20 | 2016-05-20 | 半导体压缩成型用脱模片及使用其成型而成的半导体封装 |
KR1020187036119A KR20190008882A (ko) | 2016-05-20 | 2016-05-20 | 반도체 콤프레션 성형용 이형 시트 및 이것을 사용하여 성형되는 반도체 패키지 |
MYPI2018001965A MY198300A (en) | 2016-05-20 | 2016-05-20 | Mold release sheet for semiconductor compression molding and semiconductor package which is molded using same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2016/065070 WO2017199440A1 (ja) | 2016-05-20 | 2016-05-20 | 半導体コンプレッション成型用離型シート及びこれを用いて成型される半導体パッケージ |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017199440A1 true WO2017199440A1 (ja) | 2017-11-23 |
Family
ID=60326435
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/065070 WO2017199440A1 (ja) | 2016-05-20 | 2016-05-20 | 半導体コンプレッション成型用離型シート及びこれを用いて成型される半導体パッケージ |
Country Status (7)
Country | Link |
---|---|
US (1) | US20190275763A1 (ja) |
JP (1) | JPWO2017199440A1 (ja) |
KR (1) | KR20190008882A (ja) |
CN (1) | CN109155257B (ja) |
MY (1) | MY198300A (ja) |
SG (1) | SG11201810215RA (ja) |
WO (1) | WO2017199440A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020152101A (ja) * | 2019-03-20 | 2020-09-24 | 株式会社コバヤシ | 金型と離型フィルムとの組合せ、離型フィルム、金型、及び成形体の製造方法 |
WO2021075071A1 (ja) * | 2019-10-16 | 2021-04-22 | 株式会社コバヤシ | 離型フィルム及び離型フィルムの製造方法 |
WO2022138676A1 (ja) * | 2020-12-24 | 2022-06-30 | 昭和電工マテリアルズ株式会社 | 離型フィルム及び電子部品装置の製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013039834A (ja) * | 2011-03-28 | 2013-02-28 | Hitachi Chemical Co Ltd | 多層樹脂シート、樹脂シート積層体、多層樹脂シート硬化物及びその製造方法、金属箔付き多層樹脂シート、並びに半導体装置 |
WO2015133630A1 (ja) * | 2014-03-07 | 2015-09-11 | 旭硝子株式会社 | 離型フィルム、その製造方法、および半導体パッケージの製造方法 |
WO2015133634A1 (ja) * | 2014-03-07 | 2015-09-11 | 旭硝子株式会社 | 離型フィルム、および封止体の製造方法 |
JP5792904B2 (ja) * | 2013-06-18 | 2015-10-14 | 積水化学工業株式会社 | 離型フィルム |
JP2016092272A (ja) * | 2014-11-06 | 2016-05-23 | 日立化成株式会社 | 半導体コンプレッション成型用離型シート及びこれを用いて成型される半導体パッケージ |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002158242A (ja) | 1999-11-30 | 2002-05-31 | Hitachi Chem Co Ltd | 半導体モールド用離型シート及び樹脂封止半導体装置の製造法 |
JP2004200467A (ja) * | 2002-12-19 | 2004-07-15 | Hitachi Chem Co Ltd | 半導体モールド用離型シート |
KR102157058B1 (ko) * | 2012-10-19 | 2020-09-17 | 도레이 카부시키가이샤 | 이형용 2축 배향 폴리에스테르 필름 |
JP2014151448A (ja) * | 2013-02-05 | 2014-08-25 | Daicel Corp | 離型フィルム及び繊維強化プラスチックの製造方法 |
JP6204051B2 (ja) * | 2013-04-19 | 2017-09-27 | 株式会社巴川製紙所 | モールド成形用離型シート |
US20160200072A1 (en) * | 2013-08-30 | 2016-07-14 | Yupo Corporation | Easily peelable laminate film, easily peelable laminate label, high-concealment easily peelable laminate film, and high-concealment easily peelable laminate label |
-
2016
- 2016-05-20 MY MYPI2018001965A patent/MY198300A/en unknown
- 2016-05-20 SG SG11201810215RA patent/SG11201810215RA/en unknown
- 2016-05-20 WO PCT/JP2016/065070 patent/WO2017199440A1/ja active Application Filing
- 2016-05-20 CN CN201680085883.8A patent/CN109155257B/zh active Active
- 2016-05-20 JP JP2018518055A patent/JPWO2017199440A1/ja active Pending
- 2016-05-20 KR KR1020187036119A patent/KR20190008882A/ko not_active Application Discontinuation
- 2016-05-20 US US16/302,994 patent/US20190275763A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013039834A (ja) * | 2011-03-28 | 2013-02-28 | Hitachi Chemical Co Ltd | 多層樹脂シート、樹脂シート積層体、多層樹脂シート硬化物及びその製造方法、金属箔付き多層樹脂シート、並びに半導体装置 |
JP5792904B2 (ja) * | 2013-06-18 | 2015-10-14 | 積水化学工業株式会社 | 離型フィルム |
WO2015133630A1 (ja) * | 2014-03-07 | 2015-09-11 | 旭硝子株式会社 | 離型フィルム、その製造方法、および半導体パッケージの製造方法 |
WO2015133634A1 (ja) * | 2014-03-07 | 2015-09-11 | 旭硝子株式会社 | 離型フィルム、および封止体の製造方法 |
JP2016092272A (ja) * | 2014-11-06 | 2016-05-23 | 日立化成株式会社 | 半導体コンプレッション成型用離型シート及びこれを用いて成型される半導体パッケージ |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020152101A (ja) * | 2019-03-20 | 2020-09-24 | 株式会社コバヤシ | 金型と離型フィルムとの組合せ、離型フィルム、金型、及び成形体の製造方法 |
JP7347803B2 (ja) | 2019-03-20 | 2023-09-20 | 株式会社コバヤシ | 金型と離型フィルムとの組合せ、離型フィルム、金型、及び成形体の製造方法 |
WO2021075071A1 (ja) * | 2019-10-16 | 2021-04-22 | 株式会社コバヤシ | 離型フィルム及び離型フィルムの製造方法 |
JP2021062582A (ja) * | 2019-10-16 | 2021-04-22 | 株式会社コバヤシ | 離型フィルム及び離型フィルムの製造方法 |
WO2022138676A1 (ja) * | 2020-12-24 | 2022-06-30 | 昭和電工マテリアルズ株式会社 | 離型フィルム及び電子部品装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
SG11201810215RA (en) | 2018-12-28 |
KR20190008882A (ko) | 2019-01-25 |
CN109155257B (zh) | 2023-09-15 |
US20190275763A1 (en) | 2019-09-12 |
JPWO2017199440A1 (ja) | 2019-04-04 |
MY198300A (en) | 2023-08-22 |
CN109155257A (zh) | 2019-01-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6520055B2 (ja) | 半導体コンプレッション成型用離型シート及びこれを用いて成型される半導体パッケージ | |
JP6414345B2 (ja) | 離型フィルム | |
JP5717353B2 (ja) | 熱伝導性粘着シート | |
WO2017199440A1 (ja) | 半導体コンプレッション成型用離型シート及びこれを用いて成型される半導体パッケージ | |
WO2010022154A2 (en) | Release materials | |
US20130316138A1 (en) | Protecting sheet for glasses | |
WO2021079746A1 (ja) | 離型フィルム及び半導体パッケージの製造方法 | |
CN1829783A (zh) | 耐热遮蔽带 | |
JP4421039B2 (ja) | 粘着剤組成物および粘着テープ | |
US20050038152A1 (en) | Aqueous dispersion type pressure-sensitive adhesive composition, and pressure-sensitive adhesive sheet | |
JP7052891B2 (ja) | 半導体コンプレッション成型用離型シート及びこれを用いて成型される半導体パッケージ | |
JP6819721B2 (ja) | 半導体コンプレッション成型用離型シート及びこれを用いて成型される半導体パッケージ | |
JP2004006630A (ja) | 半導体ウエハ表面保護用粘着フィルム及び該粘着フィルムを用いる半導体ウエハの裏面加工方法 | |
TWI697406B (zh) | 半導體壓縮成型用脫模片和使用其成型的半導體封裝 | |
JP2004200467A (ja) | 半導体モールド用離型シート | |
JP2023130117A (ja) | 半導体成型用離型フィルム及び半導体装置の製造方法 | |
TW202035158A (zh) | 半導體壓縮成型用脫模片和使用其成型的半導體封裝 | |
JP7370074B2 (ja) | 熱伝導シート | |
JP2011012126A (ja) | 印刷用粘着シート | |
KR20240015042A (ko) | 이형 필름 및 반도체 패키지의 제조 방법 | |
JP2004079567A (ja) | 半導体パッケージ用離型シート及び樹脂封止半導体装置の製造法 | |
TWI824665B (zh) | 晶圓背面研磨用黏結膜 | |
US5275866A (en) | Thermoformed poly (methyl methacrylate) sheets with protective film and adhesion layer | |
WO2023047977A1 (ja) | プロセス用離型フィルム、その製造方法、及び用途。 | |
TW202406746A (zh) | 離型膜及半導體封裝體的製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2018518055 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16902459 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20187036119 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 16902459 Country of ref document: EP Kind code of ref document: A1 |