WO2017159343A1 - Ruban adhésif pour traitement de plaquette de semi-conducteur et procédé de traitement de plaquette de semi-conducteur - Google Patents

Ruban adhésif pour traitement de plaquette de semi-conducteur et procédé de traitement de plaquette de semi-conducteur Download PDF

Info

Publication number
WO2017159343A1
WO2017159343A1 PCT/JP2017/007709 JP2017007709W WO2017159343A1 WO 2017159343 A1 WO2017159343 A1 WO 2017159343A1 JP 2017007709 W JP2017007709 W JP 2017007709W WO 2017159343 A1 WO2017159343 A1 WO 2017159343A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor wafer
pressure
group
adhesive tape
sensitive adhesive
Prior art date
Application number
PCT/JP2017/007709
Other languages
English (en)
Japanese (ja)
Inventor
雅人 大倉
Original Assignee
古河電気工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 古河電気工業株式会社 filed Critical 古河電気工業株式会社
Priority to KR1020177031167A priority Critical patent/KR102089928B1/ko
Priority to CN201780001306.0A priority patent/CN107960131B/zh
Publication of WO2017159343A1 publication Critical patent/WO2017159343A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C09J201/02—Adhesives based on unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors

Definitions

  • the present invention relates to an adhesive tape for processing a semiconductor wafer and a method for processing a semiconductor wafer.
  • a semiconductor package is manufactured by slicing a high-purity silicon single crystal or the like into a semiconductor wafer, and then forming an integrated circuit on the surface of the semiconductor wafer by ion implantation, etching, or the like.
  • the semiconductor wafer is processed to a desired thickness by grinding or polishing the back surface of the semiconductor wafer on which the integrated circuit is formed.
  • an adhesive tape for protecting the surface of the semiconductor wafer hereinafter also simply referred to as “surface protective tape”.
  • the back-ground semiconductor wafer is stored in a semiconductor wafer cassette after the back-side grinding is completed, transported to a dicing process, and processed into semiconductor chips.
  • the thickness of a semiconductor wafer be about 200 to 400 ⁇ m by back grinding or the like.
  • the semiconductor wafer is becoming thinner.
  • the diameter of the original semiconductor wafer tends to be increased.
  • semiconductor wafers having a diameter of 5 inches or 6 inches have been the mainstream, but in recent years, processing of semiconductor wafers having a diameter of 8 to 12 inches has become the mainstream.
  • Flip chip mounting has been attracting attention as a method for mounting a semiconductor element in a minimum area in response to recent downsizing and higher density of electronic devices.
  • Bumps are formed on the electrodes of the semiconductor element used for the flip chip mounting, and the bumps are electrically joined to the wiring on the circuit board.
  • solder or gold is mainly used as the composition of these bumps.
  • the solder bump or gold bump is formed on an exposed aluminum terminal connected to the internal wiring of the chip by vapor deposition or plating.
  • bumped semiconductor wafers have large irregularities on the surface, making thin film processing difficult, and if the backside grinding is performed using ordinary adhesive tape, semiconductor wafer cracks may occur or the thickness of the semiconductor wafer It may cause deterioration of accuracy. For this reason, the bumped semiconductor wafer is ground using a specially designed surface protection tape (see, for example, Patent Document 1).
  • the bump height of the semiconductor wafer with bumps used in the wafer level package remains high, and bumps with a height of 250 ⁇ m or more are also mounted.
  • Wafer level packages do not require chip stacking, so they are not ground as thin as 50 ⁇ m or less like memory semiconductor wafers, but they are very easy to break even with thick film grinding because they have high bumps and are 150 ⁇ m thick. The following grinding thickness easily causes the problem of semiconductor wafer cracking.
  • a urethane acrylate oligomer in which a compound having an ethylenically unsaturated group to be reacted with an acrylic copolymer having a functional group-containing monomer unit is reacted with an aliphatic diisocyanate and an acrylate having one hydroxyl group See also).
  • the present invention is suitably used for a semiconductor wafer having a step or a protrusion, for securely holding a semiconductor wafer during processing of the semiconductor wafer, and capable of peeling without peeling or leaving a residue of the semiconductor wafer during peeling. It is an object to provide a method for processing an adhesive tape and a semiconductor wafer.
  • the present inventors have found that the molar amount per unit g of the ethylenically unsaturated group of the radiation curable pressure-sensitive adhesive is important. That is, it has been conventionally desired that the radiation curable pressure-sensitive adhesive is sufficiently crosslinked so as to reduce the apparent adhesive force (adhesive force to a smooth adherend).
  • the surface unevenness is large, such as a semiconductor wafer with bumps, curing shrinkage occurs by crosslinking, and adhesive residue bites into the semiconductor wafer with bumps. It was found that an increase in peeling force occurred.
  • the present invention has been completed based on such findings.
  • a semiconductor wafer processing pressure-sensitive adhesive tape having a pressure-sensitive adhesive layer on at least one surface of a base film, wherein the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive and has at least ethylene in the side chain.
  • Base resin having a polymerizable unsaturated group (radiation polymerizable carbon-carbon double bond and ethylenic double bond), an acrylic pressure-sensitive base resin containing no monomer unit derived from alicyclic (meth) acrylate, and A resin or oligomer selected from urethane acrylate oligomers having at least two ethylenically unsaturated groups (radiation polymerizable carbon-carbon double bonds and ethylenic double bonds) in the molecule
  • the pressure-sensitive adhesive comprises A pressure-sensitive adhesive tape for processing a semiconductor wafer, having an ethylenically unsaturated group of 0.2 to 2.0 mmol / g.
  • An acrylic pressure-sensitive base resin that does not contain a monomer unit derived from the alicyclic (meth) acrylate is an alkyl ester that may have a functional group of (meth) acrylic acid, acrylic acid, and ⁇ 1>
  • the functional group of the alkyl ester which may have a functional group of (meth) acrylic acid is a carboxy group, a hydroxyl group, an amino group, a mercapto group, a cyclic acid anhydride group, an epoxy group, an isocyanate group
  • ⁇ 4> The pressure-sensitive adhesive tape for processing a semiconductor wafer according to any one of ⁇ 1> to ⁇ 3>, wherein the mass average molecular weight of at least one kind of the oligomer is 1,100 to 20,000.
  • the oligomer is a mixture of at least an oligomer having two ethylenically unsaturated groups in the molecule and an oligomer having three or more ethylenically unsaturated groups in the molecule ⁇ 1> to The pressure-sensitive adhesive tape for processing a semiconductor wafer according to any one of ⁇ 5>.
  • ⁇ 7> The adhesive for semiconductor wafer processing according to any one of ⁇ 1> to ⁇ 6>, wherein the adhesive has the ethylenically unsaturated group of 0.72 to 2.0 mmol / g. tape.
  • ⁇ 8> The adhesive tape for processing a semiconductor wafer according to any one of ⁇ 1> to ⁇ 7>, wherein the adhesive contains a polyvalent isocyanate compound.
  • ⁇ 9> Any of ⁇ 1> to ⁇ 8>, wherein the adhesive strength after UV curing to the SUS plate is 0.3 to 3.0 N / 25 mm, and the curing shrinkage stress is 300 gf or less
  • the semiconductor wafer processing pressure-sensitive adhesive tape according to any one of ⁇ 1> to ⁇ 9> is bonded to a semiconductor wafer surface having a surface irregularity of 10 ⁇ m or more, and then irradiated with ultraviolet rays, to thereby form the semiconductor wafer A method for processing a semiconductor wafer, comprising a step of peeling the processing adhesive tape.
  • a base resin having an ethylenically unsaturated group (radiation polymerizable carbon-carbon double bond and ethylenic double bond) in the side chain, and an alicyclic (meth) acrylate “at least derived from a base resin having an ethylenically unsaturated group (radiation polymerizable carbon-carbon double bond and ethylenic double bond) in the side chain, and an alicyclic (meth) acrylate.
  • the present invention it is possible to provide a semiconductor wafer processing pressure-sensitive adhesive tape and a semiconductor wafer processing method that can securely hold a semiconductor wafer during semiconductor wafer processing and can be peeled off without being damaged or left behind when the semiconductor wafer is peeled off. became.
  • the semiconductor wafer having steps and protrusions, or the semiconductor wafer to be ground and the thickness of the semiconductor wafer after grinding are thin, the above-described effects of the present invention are effectively exhibited.
  • the pressure-sensitive adhesive tape for processing a semiconductor wafer according to the present invention has a radiation having an ethylenically unsaturated group (radiation polymerizable carbon-carbon double bond) of 0.2 to 2.0 mmol / g on at least one surface of a base film. It has an adhesive layer composed of a curable adhesive.
  • radiation polymerizable carbon-carbon double bond Radiation polymerizable carbon-carbon double bond
  • the base film is preferably made of a resin film, and known plastics, rubbers and the like can be used.
  • polyolefin resin polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-acrylic acid Homopolymers or copolymers of ⁇ -olefins such as methyl copolymers, ethylene-acrylic acid copolymers, ionomers, or mixtures thereof), polyester resins (polyethylene terephthalate, polyethylene naphthalate), polycarbonate resins, polyurethane resins Engineering plastics (polymethyl methacrylate, etc.), synthetic rubbers (styrene-ethylene-butene or pentene copolymers), thermoplastic elastomers (polyamide-polyol copoly
  • the thickness of the base film is 50 to 300 ⁇ m if the base material has flexibility such as polyethylene, and has rigidity such as polyester, from the viewpoints of high elongation characteristics, peelability of the surface protection tape, and cutability in the bonding machine.
  • the base material has flexibility such as polyethylene, and has rigidity such as polyester, from the viewpoints of high elongation characteristics, peelability of the surface protection tape, and cutability in the bonding machine.
  • 10 to 100 ⁇ m is appropriate.
  • 50 to 300 ⁇ m is preferable.
  • the pressure-sensitive adhesive used for the pressure-sensitive adhesive layer is a radiation curable pressure-sensitive adhesive.
  • Radiation curable pressure-sensitive adhesives only need to have the property of being cured by radiation to form a three-dimensional network, and can be broadly divided into 1) ethylenically unsaturated groups (radiation polymerizable carbon-carbon double bonds in ethylenic groups) At least two in the molecule relative to the pressure-sensitive adhesive comprising a base resin (polymer) having a double bond) and 2) a normal rubber-based or (meth) acrylic pressure-sensitive base resin (polymer) Are classified into pressure-sensitive adhesives containing a low molecular weight compound having an ethylenically unsaturated group (hereinafter referred to as radiation-polymerizable low molecular weight compound) and a photopolymerization initiator. In the present invention, the above 2) is preferable.
  • Adhesive comprising a base resin having an ethylenically unsaturated group in the side chain
  • the adhesive having an ethylenically unsaturated group in the side chain is preferably a (meth) acrylic adhesive
  • the base resin is a (meth) acrylic Those containing a polymer or (meth) acrylic polymer as a main component are particularly preferred.
  • a (meth) acrylic polymer as a main component means that the (meth) acrylic polymer component is at least 50% by mass or more, preferably 80% by mass or more (100% by mass or less).
  • the (meth) acrylic polymer has an ethylenically unsaturated group in at least a side chain, so that it can be cured by irradiation, and may further have a functional group such as an epoxy group or a carboxy group.
  • the (meth) acrylic polymer having an ethylenically unsaturated group in the side chain may be produced in any manner.
  • the group having an ethylenically unsaturated group may be any group as long as it has a non-aromatic ethylenic double bond, but a (meth) acryloyl group, a (meth) acryloyloxy group, a (meth) acryloyl group.
  • An amino group, an allyl group, a 1-propenyl group, and a vinyl group (including styrene or substituted styrene) are preferable, and a (meth) acryloyl group and a (meth) acryloyloxy group are more preferable.
  • Examples of the functional groups ( ⁇ ) and ( ⁇ ) include a carboxy group, a hydroxyl group, an amino group, a mercapto group, a cyclic acid anhydride group, an epoxy group, and an isocyanate group (—N ⁇ C ⁇ O).
  • the cyclic acid anhydride group is a group having a cyclic acid anhydride structure.
  • one functional group of the functional group ( ⁇ ) and the functional group ( ⁇ ) is a carboxy group, a hydroxyl group, an amino group, a mercapto group, or a cyclic acid anhydride group
  • the other functional group includes an epoxy group and an isocyanate group.
  • the other functional group includes a carboxy group, a hydroxyl group, an amino group, and a mercapto group.
  • the other functional group may be an epoxy group.
  • the (meth) acrylic polymer having a functional group ( ⁇ ) in the side chain is a (meth) acrylic monomer having a functional group ( ⁇ ), preferably a (meth) acrylic ester [(particularly, a functional group in the alcohol part). It can be obtained by using (having ( ⁇ )) as a monomer component.
  • the (meth) acrylic polymer having a functional group ( ⁇ ) in the side chain is preferably a copolymer, and this copolymerization component is a (meth) acrylic acid alkyl ester, in particular, a functional group ( ⁇ ) and (meth) acrylic acid alkyl esters in which the group having an ethylenically unsaturated group is not substituted are preferred.
  • Examples of (meth) acrylic acid esters include methyl acrylate, ethyl acrylate, n-propyl acrylate, n-butyl acrylate, isobutyl acrylate, n-pentyl acrylate, n-hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2 -Ethylhexyl acrylate, dodecyl acrylate, decyl acrylate hexyl acrylate, and the corresponding methacrylates.
  • the (meth) acrylic acid ester may be one type or two or more types, but it is preferable to use one having an alcohol part having 5 or less carbon atoms and one having 6 to 12 carbon atoms.
  • a glass transition point (Tg) becomes so low that a monomer with large carbon number of an alcohol part is used, the thing of a desired glass transition point can be obtained.
  • a low molecular compound having a carbon-carbon double bond such as vinyl acetate, styrene or acrylonitrile for the purpose of improving compatibility and various performances.
  • the content of is preferably in the range of 5% by mass or less.
  • Examples of (meth) acrylic monomers having a functional group ( ⁇ ) include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol Monoacrylates, glycol monomethacrylates, N-methylolacrylamide, N-methylolmethacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, Some of the isocyanate groups of itaconic anhydride, fumaric anhydride, phthalic anhydride, glycidyl acrylate, glycidyl methacrylate, allyl glycidyl ether, polyisocyanate compounds Such as those urethanization with monomers like having Bokishi groups and ethylenically unsaturated groups.
  • acrylic acid, methacrylic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycidyl acrylate, and glycidyl methacrylate are preferable.
  • Acrylic acid, methacrylic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylate Are more preferable, and 2-hydroxyalkyl acrylates and 2-hydroxyalkyl methacrylates are more preferable.
  • the functional group ( ⁇ ) in the compound having an ethylenically unsaturated group and a functional group ( ⁇ ) is preferably an isocyanate group.
  • (meth) acrylic acid ester having an isocyanate (—N ⁇ C ⁇ O) group in the alcohol part can be mentioned, and in particular, (meth) acrylic acid alkyl ester substituted with an isocyanate (—N ⁇ C ⁇ O) group.
  • examples of such a monomer include 2-isocyanatoethyl methacrylate and 2-isocyanatoethyl acrylate.
  • the compound illustrated with the (meth) acrylic-type monomer which has a functional group ((alpha)) as a preferable compound in case a functional group ((beta)) is other than an isocyanate group is mentioned.
  • the compound having an ethylenically unsaturated group and the functional group ( ⁇ ) is preferably a functional group ( ⁇ ) in the side chain of the polymer, preferably By reacting with a hydroxyl group, a polymerizable group can be incorporated into the copolymer, and the adhesive strength after irradiation can be reduced.
  • ketone, ester, alcohol, and aromatic solvents can be used, among which toluene, Generally, it is a good solvent for a (meth) acrylic polymer such as ethyl acetate, isopropyl alcohol, benzene methyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone, and a solvent having a boiling point of 60 to 120 ° C. is preferable.
  • radical generators such as azobis compounds such as ⁇ , ⁇ '-azobisisobutyronitrile and organic peroxide compounds such as benzoyl peroxide are usually used.
  • a catalyst and a polymerization inhibitor can be used in combination, and a (meth) acrylic copolymer having a desired molecular weight can be obtained by adjusting the polymerization temperature and the polymerization time.
  • a solvent such as mercaptan or carbon tetrachloride. This reaction is not limited to solution polymerization, and other methods such as bulk polymerization and suspension polymerization may be used.
  • the mass average molecular weight of the base resin having an ethylenically unsaturated group in the side chain is preferably about 200,000 to 1,000,000. If the mass average molecular weight exceeds 1,000,000, when irradiated, the adhesive after irradiation is not flexible and is brittle, so that adhesive residue is left on the surface of the semiconductor chip during peeling. If the mass average molecular weight is less than 200,000, the cohesive force before radiation irradiation is small and the adhesive force is weak, so that the semiconductor chip cannot be held sufficiently during dicing, and there is a possibility of chip fly. In addition, curing is insufficient after irradiation, and adhesive residue is left on the surface of the semiconductor chip during peeling. In order to prevent these as much as possible, the mass average molecular weight is preferably 200,000 or more. In the present invention, the mass average molecular weight is a polystyrene-reduced mass average molecular weight by a conventional method.
  • the glass transition point of the base resin having an ethylenically unsaturated group in the side chain is preferably ⁇ 70 to ⁇ 10 ° C., more preferably ⁇ 50 to ⁇ 10 ° C. If the glass transition point is lower than ⁇ 70 ° C., the fluidity of the pressure-sensitive adhesive is high and causes residue of the adhesive. This causes grinding water to enter the wafer surface during grinding.
  • the acid value of the base resin having an ethylenically unsaturated group in the side chain is preferably 0.5 to 30, 1 to 20 is more preferable.
  • the hydroxyl value of the base resin having an ethylenically unsaturated group in the side chain is 5 To 100 is preferable, and 10 to 80 is more preferable.
  • the acid value and the hydroxyl value are prepared by adjusting the (meth) acrylic polymer having a functional group ( ⁇ ) in the side chain, the ethylenically unsaturated group, and the (meth) acrylic polymer.
  • the step of reacting a compound having a functional group ( ⁇ ) capable of reacting with the functional group ( ⁇ ) of the side chain it can be prepared as desired by leaving an unreacted functional group.
  • photopolymerization initiators include, for example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, phenyldimethoxyacetylbenzene, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, benzyl dimethyl ketal, ⁇ -hydroxycyclohexyl phenyl ketone, Examples thereof include 2-hydroxymethylphenylpropane.
  • the blending amount of these photopolymerization initiators is preferably 0.01 to 10 parts by mass, more preferably 0.01 to 5 parts by mass with respect to 100 parts by mass of the base resin. If the blending amount is too small, the reaction is insufficient, and if the blending amount is too large, the low molecular components increase, thereby affecting the contamination.
  • the pressure-sensitive adhesive made of a base resin having an ethylenically unsaturated group in the side chain preferably contains a crosslinking agent.
  • a crosslinking agent may be any, but a crosslinking agent selected from the group of polyisocyanates, melamine / formaldehyde resins and epoxy resins is preferred. Of these, polyisocyanates are preferred in the present invention.
  • the polyisocyanates are not particularly limited, and examples thereof include 4,4′-diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4,4′-diphenyl ether diisocyanate, 4,4 ′-[2,2-bis (4 -Phenoxyphenyl) propane] aromatic isocyanate such as diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate Lysine diisocyanate, lysine triisocyanate and the like.
  • Coronate L made by Nippon Polyurethane Co., Ltd., trade name
  • Coronate L made by Nippon Polyurethane Co., Ltd., trade name
  • melamine / formaldehyde resin examples include Nicalac MX-45 (trade name, manufactured by Sanwa Chemical Co., Ltd.), Melan (trade name, manufactured by Hitachi Chemical Co., Ltd.), and the like.
  • TETRAD-X (trade name, manufactured by Mitsubishi Chemical Corporation) or the like can be used.
  • the amount of the crosslinking agent is preferably 0.1 to 10 parts by mass, more preferably 1 to 10 parts by mass with respect to 100 parts by mass of the base resin.
  • the blending amount of the crosslinking agent is less than 0.1 parts by mass, the cohesive force improving effect is not sufficient, and the fluidity of the pressure-sensitive adhesive is high, which causes the adhesive residue. If the amount of the crosslinking agent exceeds 10 parts by mass, the adhesive elastic modulus becomes too high, and the semiconductor wafer surface cannot be protected.
  • Adhesive containing a radiation-polymerizable low molecular weight compound is not particularly limited, and is a known chlorinated polypropylene resin or acrylic used for the adhesive. Resin [(meth) acrylic resin], polyester resin, polyurethane resin, epoxy resin and the like can be used.
  • the base resin of the pressure-sensitive adhesive is preferably an acrylic resin ((meth) acrylic resin), and the side chain that is a raw material for synthesizing the base resin having an ethylenically unsaturated group in the side chain is functional.
  • a (meth) acrylic polymer having a group ( ⁇ ) is particularly preferred.
  • the pressure-sensitive adhesive is preferably prepared by appropriately blending a photopolymerization initiator, a curing agent or a crosslinking agent in addition to the acrylic resin as the base resin and the radiation-polymerizable low molecular weight compound.
  • the mass average molecular weight of the adhesive base resin is preferably about 200,000 to 2,000,000. In the present invention, it is preferable to contain at least one oligomer having a mass average molecular weight of 1,000 to 20,000 in addition to the base resin.
  • the mass average molecular weight of the oligomer is more preferably 1,100 to 20,000, further preferably 2,000 to 20,000, and particularly preferably 2,000 to 10,000.
  • the radiation polymerizable low molecular weight compound a low molecular weight compound having at least two ethylenically unsaturated groups (radiation polymerizable carbon-carbon double bonds) in a molecule that can be three-dimensionally reticulated by irradiation is used.
  • the oligomer is a radiation polymerizable low molecular weight compound having an ethylenically unsaturated group.
  • radiation-polymerizable low molecular weight compounds include trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, Dipentaerythritol hexa (meth) acrylate, 1,4-butylene glycol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, polyethylene glycol di (meth) acrylate, oligoester (meth) acrylate, etc. Applicable.
  • urethane (meth) acrylate oligomers can also be used as radiation polymerizable low molecular weight compounds.
  • Urethane (meth) acrylate oligomers include a polyester compound or a polyether compound such as a polyhydric isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3 (Xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane-4,4-diisocyanate, etc.) are reacted with a terminal isocyanate urethane prepolymer obtained by reacting (meth) acrylate having a hydroxyl group (for example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate, polyethylene glycol methacrylate
  • the radiation polymerizable low molecular weight compound may be used alone or in combination of two or more.
  • the radiation curable pressure-sensitive adhesive can contain a photopolymerization initiator as required. As long as it reacts with the radiation which permeate
  • benzophenones such as benzophenone, 4,4′-dimethylaminobenzophenone, 4,4′-diethylaminobenzophenone, 4,4′-dichlorobenzophenone, acetophenones such as acetophenone, diethoxyacetophenone, phenyldimethoxyacetylbenzene, 2- Anthraquinones such as ethyl anthraquinone and t-butylanthraquinone, 2-chlorothioxanthone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triarylimidazole dimer (rophine dimer), acridine compound , Acylphosphine oxides, and the like. These can be used alone or in combination of two or more.
  • the addition amount of the photopolymerization initiator is preferably 0.1 to 10 parts by mass, more preferably 0.3 to 7.5 parts by mass, and further preferably 0.5 to 5 parts by mass with respect to 100 parts by mass of the base resin. .
  • the amount of photopolymerization initiator added is large, radiation curing occurs at multiple points and abruptly, resulting in increased radiation curing shrinkage. Therefore, photopolymerization is performed compared to conventional radiation curing type surface protection adhesive tapes. Reducing the amount of initiator is also useful from the viewpoint of suppressing radiation curing shrinkage.
  • the pressure-sensitive adhesive preferably contains a curing agent or a crosslinking agent.
  • the curing agent or crosslinking agent include polyvalent isocyanate compounds, polyvalent epoxy compounds, polyvalent aziridine compounds, chelate compounds and the like.
  • the polyvalent isocyanate compound is not particularly limited.
  • polyvalent epoxy compound examples include epoxy resins, such as ethylene glycol diglycidyl ether, terephthalic acid diglycidyl ester acrylate, and anilines substituted with two glycidyl groups on the N atom.
  • epoxy resins such as ethylene glycol diglycidyl ether, terephthalic acid diglycidyl ester acrylate
  • anilines substituted with two glycidyl groups on the N atom is an example of anilines.
  • anilines is N, N′-tetraglycidyl-m-phenylenediamine.
  • Polyvalent aziridine compounds include tris-2,4,6- (1-aziridinyl) -1,3,5-triazine, tris [1- (2-methyl) -aziridinyl] phosphine oxide, hexa [1- (2- Methyl) -aziridinyl] triphosphatriazine and the like.
  • Examples of the chelate compound include ethyl acetoacetate aluminum diisopropylate and aluminum tris (ethyl acetoacetate).
  • the blending amount of the curing agent or the crosslinking agent is preferably 0.1 to 10 parts by mass, more preferably 0.1 to 5.0 parts by mass, and 0.5 to 4.0 parts by mass with respect to 100 parts by mass of the base resin. Is more preferable.
  • the pressure-sensitive adhesive of the pressure-sensitive adhesive layer of the present invention comprises at least a base resin having an ethylenically unsaturated group (radiation-polymerizable carbon-carbon double bond and ethylenic double bond) in the side chain, an alicyclic (metal ) Acrylic pressure-sensitive base resin containing no monomer units derived from acrylate and having at least two ethylenically unsaturated groups (radiation polymerizable carbon-carbon double bonds and ethylenic double bonds) in the molecule It has a resin or oligomer selected from urethane acrylate oligomers.
  • the thickness of the pressure-sensitive adhesive layer is not particularly limited, but is selected according to the unevenness of the surface of the adherend. For example, when bonding to a bumped wafer, the thickness is about 10 to 50 ⁇ m thicker than the bump height. It is preferable. Specifically, it is preferably 10 to 500 ⁇ m, more preferably 30 to 400 ⁇ m, further preferably 50 to 300 ⁇ m, and particularly preferably 50 to 150 ⁇ m.
  • the pressure-sensitive adhesive may be a multilayer, and in this case, it is desirable that at least the outermost-layer pressure-sensitive adhesive is a radiation curable pressure-sensitive adhesive that satisfies the configuration of the present invention. For example, when the substrate film that softens by heating is used to follow the surface of the adherend, the total thickness of the layers to be followed is preferably within the above range. It is possible to reduce the thickness to about 100 ⁇ m.
  • the content of the ethylenically unsaturated group (radiation polymerizable carbon-carbon double bond) in the radiation curable pressure-sensitive adhesive is 0.2 to 2.0 mmol / g.
  • the ethylenically unsaturated group in the radiation curable adhesive is a compound having an ethylenically unsaturated group contained in the radiation curable adhesive (a polymer such as a base resin having an ethylenically unsaturated group in the side chain).
  • Radiation polymerizable low molecular weight compound is the total of all ethylenically unsaturated groups, and is the total number of moles of ethylenically unsaturated groups per unit g of the radiation curable pressure-sensitive adhesive.
  • the content of the ethylenically unsaturated group in the radiation curable pressure-sensitive adhesive is preferably 0.2 to 1.8 mmol / g, more preferably 0.2 to 1.5 mmol / g, and 0.5 to 1.5 mmol. / G is more preferable.
  • the pressure-sensitive adhesive is a multilayer, it is preferable to satisfy the above range when all the pressure-sensitive adhesives are regarded as one layer, and it is more preferable that each layer satisfies the above range.
  • the content of the ethylenically unsaturated group in the radiation curable pressure-sensitive adhesive is a (meth) acrylic polymer used when synthesizing the base resin.
  • the amount of the functional group ( ⁇ ) capable of reacting with the side chain functional group ( ⁇ ) and the amount of the compound having an ethylenically unsaturated group and the number of ethylenically unsaturated groups can be adjusted. It can adjust with the number and compounding quantity of the ethylenically unsaturated group which has.
  • the content of the ethylenically unsaturated group in the radiation curable pressure-sensitive adhesive can be determined by the amount of the compound or synthetic raw material used as described above, but the iodine value of the radiation curable pressure-sensitive adhesive [100 g of base resin G number of iodine (I 2 ) to be added] and the molecular weight of I 2 is 253.8, and thus this value can be obtained by unit conversion to mmol / g.
  • the adhesive strength after UV curing with respect to the SUS plate is preferably 0.3 to 3.0 N / 25 mm, more preferably 0.5 to 3.0 N / 25 mm. 0.5 to 1.5 is more preferable.
  • the term “after ultraviolet curing” means that the entire pressure-sensitive adhesive layer has been cured by irradiation with ultraviolet rays so as to have an integrated irradiation amount of 500 mJ / cm 2 .
  • test pieces each having a width of 25 mm and a length of 150 mm were collected from an adhesive tape for semiconductor wafer processing before radiation irradiation, and the test pieces were finished with JIS G 4305 finished with No. 280 water-resistant abrasive paper defined in JIS R 6253.
  • a 2 kg rubber roller is reciprocated three times on a SUS steel plate having a thickness of 1.5 mm to 2.0 mm, and left for 1 hour, and then cured by irradiating with 500 mJ / cm 2 ultraviolet rays.
  • the adhesive strength after UV curing on the SUS plate is the molecular weight of the pressure-sensitive adhesive composition, the type and amount of the radiation-polymerizable low molecular weight compound, the type and amount of the additive including the crosslinking agent, and the thickness of the radiation-curable pressure-sensitive adhesive layer.
  • the thickness and the like as appropriate, the scope of the present invention can be achieved. If the apparent adhesive force to the SUS plate is too small, curing shrinkage also increases, so that the peel force from an adherend having a large surface irregularity such as a bump wafer is increased. If the apparent adhesive force to the SUS plate is too large, the radiation curing is insufficient and peeling failure or adhesive residue occurs.
  • the radiation curable pressure-sensitive adhesive (pressure-sensitive adhesive layer) of the present invention has a curing shrinkage stress of preferably 300 gf or less, more preferably 50 to 250 gf, and even more preferably 50 to 200 gf.
  • the curing shrinkage stress of the pressure-sensitive adhesive can be determined as follows.
  • the curing shrinkage stress of the pressure-sensitive adhesive (pressure-sensitive adhesive layer) is obtained by laminating a coated and dried pressure-sensitive adhesive on a release-treated separator, and punching it into a pellet with a thickness of about 2 mm and a diameter of ⁇ 8 mm.
  • a curing shrinkage measuring device for example, resin curing shrinkage rate stress measuring device “CUSTRON” manufactured by Matsuo Sangyo Co., Ltd.
  • an ultraviolet ray of 500 mJ / cm 2 is irradiated at an illuminance of 50 mW from an initial load of ⁇ 60 gf.
  • the curing shrinkage stress after 5 minutes is measured.
  • the curing shrinkage stress is a force in the compression direction, the force is opposite to the initial load. Therefore, the initial load is expressed as minus.
  • the curing shrinkage stress decreases as the amount of ethylenically unsaturated groups or initiator decreases. Moreover, since the ethylenically unsaturated group is cross-linked to the base polymer or the molecular weight of the ethylenically unsaturated group is increased, the movement of the ethylenically unsaturated group during radiation cross-linking can be suppressed, so that the curing shrinkage stress can be suppressed. By reducing the curing shrinkage stress, biting and catching on the adherend surface during radiation curing shrinkage can be reduced, so that peeling failure and adhesive residue can be reduced.
  • the pressure-sensitive adhesive tape for processing a semiconductor wafer of the present invention may be provided with other layers such as an adhesive layer.
  • the adhesive layer is provided on the pressure-sensitive adhesive layer.
  • the adhesive layer contains an epoxy resin having two or more epoxy groups in the molecule, and is bisphenol type, naphthalene type, phenol novolac type, cresol novolak type, phenol aralkyl type, biphenyl type. It is preferable to contain at least one epoxy resin selected from the group consisting of triphenylmethane type and dicyclopentadiene type.
  • the adhesive layer includes a curing agent and a curing accelerator that are cured by reacting with the epoxy resin.
  • the curing agent and curing accelerator include phenolic curing agents, acid anhydrides, amine compounds, imidazoles, and phosphines.
  • the adhesive layer preferably contains a polymer compound, such as phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, acrylic resin, polyester resin, polyethylene resin, polyethersulfone resin, poly Examples include ether imide resins, polyvinyl acetal resins, urethane resins, and acrylic rubbers.
  • a polymer compound such as phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, acrylic resin, polyester resin, polyethylene resin, polyethersulfone resin, poly Examples include ether imide resins, polyvinyl acetal resins, urethane resins, and acrylic rubbers.
  • the adhesive layer may contain an inorganic filler.
  • the inorganic filler only needs to have insulating properties and thermal conductivity. For example, nitrogen compounds (boron nitride, aluminum nitride, silicon nitride, carbon nitride, titanium nitride, etc.), carbon compounds (silicon carbide, fluorine carbide, Boron carbide, titanium carbide, tungsten carbide, diamond, etc.), metal oxides (silica, alumina, magnesium oxide, zinc oxide, beryllium oxide, etc.) and the like.
  • the thickness of the adhesive layer is not particularly limited, but can be appropriately selected depending on the height of the bump to be embedded. For example, it can be preferably used if it is as thin as 10 to 20 ⁇ m from the height of the bump.
  • the adhesive layer is provided by coating the adhesive composition on the release film and bonding it to the adhesive layer of the base film.
  • the adhesive tape for semiconductor wafer processing may have a release liner on the adhesive layer.
  • a release liner a polyethylene terephthalate film subjected to silicone release treatment or the like is used. If necessary, a polypropylene film that is not subjected to silicone release treatment may be used.
  • the semiconductor wafer processing method of the present invention is a semiconductor wafer processing method using the semiconductor wafer processing adhesive tape of the present invention.
  • the adhesive tape for semiconductor wafer processing of the present invention may be used in any process as long as it is a semiconductor wafer processing process. For example, a semiconductor wafer back surface grinding process, a dicing process, a dicing die bonding process, and the like are preferable.
  • the adhesive tape for processing a semiconductor wafer of the present invention is preferably used by being bonded to a semiconductor wafer surface having surface irregularities of 10 ⁇ m or more. It is more preferable to apply to semiconductor wafers having surface irregularities (bump (electrode) height) of 20 to 400 ⁇ m, and more preferable to apply to 50 to 150 ⁇ m.
  • the arrangement density (high density) of bumps on the surface of the semiconductor wafer is not particularly limited, but a pitch more than twice the height of the bumps (from the apex in the height direction of the bumps to the next arranged bumps) Applicable to the distance to the apex in the height direction). It is also used for semiconductor wafers in which bumps are uniformly arranged on the entire surface.
  • the thickness of the semiconductor wafer is preferably 20 to 500 ⁇ m, more preferably 50 to 200 ⁇ m, and even more preferably 80 to 200 ⁇ m in terms of the thickness of the semiconductor wafer that has been back-ground by a processing method using a semiconductor wafer processing adhesive tape.
  • a thin film semiconductor wafer can be obtained with a high yield.
  • This semiconductor wafer processing method is suitable as a manufacturing method for thin-film grinding of a semiconductor wafer with an electrode of 50 ⁇ m or less.
  • the method for processing a semiconductor wafer of the present invention includes a step of peeling the pressure-sensitive adhesive tape for processing a semiconductor wafer by irradiating with radiation, particularly ultraviolet rays, after the pressure-sensitive adhesive tape for processing a semiconductor wafer of the present invention is bonded to the surface of the semiconductor wafer. It is preferable.
  • the adhesive tape for semiconductor wafer processing of the present invention is bonded to the circuit pattern surface (front surface) of the semiconductor wafer so that the adhesive layer becomes the bonding surface.
  • the surface side of the semiconductor wafer having no circuit pattern is ground until the thickness of the semiconductor wafer reaches a predetermined thickness, for example, 10 to 200 ⁇ m.
  • a dicing process is performed, and then a heat seal type (thermal fusion type) or adhesive type release tape is adhered to the back surface of the base film of the semiconductor wafer processing adhesive tape, and the semiconductor wafer processing adhesive tape is attached to the semiconductor wafer. Peel off.
  • a heat seal type thermal fusion type
  • adhesive type release tape is adhered to the back surface of the base film of the semiconductor wafer processing adhesive tape, and the semiconductor wafer processing adhesive tape is attached to the semiconductor wafer. Peel off.
  • Adhesive compositions 2A to 2G were prepared as follows.
  • Example 1 An adhesive composition 2A was applied on a polyethylene terephthalate (PET) separator having a thickness of 38 ⁇ m so that the thickness after drying was 90 ⁇ m, dried, and then an ethylene-vinyl acetate copolymer having a thickness of 140 ⁇ m.
  • An adhesive tape for processing a semiconductor wafer having a thickness of 230 ⁇ m was manufactured by laminating with a base film made of (EVA) film.
  • Example 2 In Example 1, the adhesive tape for semiconductor wafer processing was manufactured like Example 1 except having changed adhesive composition 2A into adhesive composition 2B.
  • Example 3 In Example 1, a pressure-sensitive adhesive tape for semiconductor wafer processing was produced in the same manner as Example 1 except that the pressure-sensitive adhesive composition 2A was changed to the pressure-sensitive adhesive composition 2C.
  • Example 4 the adhesive tape for semiconductor wafer processing was manufactured like Example 1 except having changed adhesive composition 2A into adhesive composition 2D.
  • Example 1 the adhesive tape for semiconductor wafer processing was manufactured like Example 1 except having changed adhesive composition 2A into adhesive composition 2E.
  • Example 2 the adhesive tape for semiconductor wafer processing was manufactured like Example 1 except having changed adhesive composition 2A into adhesive composition 2F.
  • Example 3 the adhesive tape for semiconductor wafer processing was manufactured like Example 1 except having changed adhesive composition 2A into adhesive composition 2G.
  • the molar content of the ethylenically unsaturated group (carbon-carbon double bond) contained in the radiation curable adhesive is the raw material used. Calculated from Moreover, the measurement of the peeling force after the radiation irradiation with respect to SUS, the measurement of the curing shrinkage stress, the evaluation of the peeling force, the evaluation of dust intrusion and the evaluation of the adhesive residue were performed.
  • test pieces each having a width of 25 mm and a length of 150 mm were sampled from the semiconductor wafer processing pressure-sensitive adhesive tape before irradiation, and the test pieces are defined in JIS R 6253.
  • a 2 kg rubber roller was pressed on a SUS steel plate with a thickness of 1.5 mm to 2.0 mm specified in JIS G 4305, finished with 280th water-resistant abrasive paper, and pressed for 3 hours.
  • a cured and shrinkage measuring device [Plastic made by Matsuo Sangyo Co., Ltd.] is used by laminating a coated and dried adhesive on a release-treated separator and punching it into a pellet with a thickness of about 2 mm and a diameter of ⁇ 8 mm.
  • Curing shrinkage stress measuring apparatus “CUSTRON” was used, and irradiation with 500 mJ / cm 2 of ultraviolet light was performed at an illuminance of 50 mW from an initial load of ⁇ 60 gf, and the curing shrinkage stress after 5 minutes was measured. Since the curing shrinkage stress is a force in the compression direction, the force is opposite to the initial load.
  • the curing shrinkage stress represents the shrinkage stress when the initial load ⁇ 60 gf is 0.
  • peeling force when the width at the time of peeling became the maximum (200 mm), the following criteria were evaluated. In Table 1, this is simply indicated as “peeling force”.
  • the adhesive tape for semiconductor wafer processing of Examples 1 to 4 in which the content of ethylenically unsaturated groups in the adhesive satisfies the range of 0.2 to 2.0 mmol / g has a curing shrinkage stress.
  • the peel force for the SUS plate can be sufficiently reduced to 3 N / 25 mm or less within a range that can be suppressed to 300 gf or less, so that the peel force for bump wafers with large surface irregularities can be suppressed to 50 N / 200 mm or less, which is excellent. I understand.
  • the content of ethylenically unsaturated groups in the adhesive exceeds 2.0 mmol / g, and the curing shrinkage stress is as high as 330 gf and 380 gf. For this reason, the peel force is also higher than 50 N / 200 mm. Moreover, in the adhesive tape for processing a semiconductor wafer of Comparative Example 2, an adhesive residue was observed. Conversely, the pressure-sensitive adhesive tape for semiconductor wafer processing of Comparative Example 3 in which the content of ethylenically unsaturated groups in the pressure-sensitive adhesive is less than 0.2 mmol / g has a low curing shrinkage stress of 120 gf.
  • the pressure-sensitive adhesive tape for processing a semiconductor wafer of the present invention is excellent in evaluation of both dust intrusion and adhesive residue, and in particular, a semiconductor wafer having a surface irregularity of 75 ⁇ m and a bump height of 10 ⁇ m or more. It turns out that it is excellent as an adhesive tape for semiconductor wafer processing used by bonding to the surface.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne un ruban adhésif pour traitement de plaquette de semi-conducteur, qui comprend une couche adhésive sur au moins une surface d'un film de base, et qui est caractérisé en ce que l'adhésif dans la couche adhésive est un adhésif durcissable par rayonnement et comprend au moins une résine ou un oligomère choisi parmi une résine de base ayant un groupe éthyléniquement insaturé (qui est une liaison double carbone-carbone polymérisable par rayonnement et une liaison double éthylénique) dans une chaîne latérale, une résine de base sensible à la pression acrylique ne contenant aucune unité monomère dérivée d'un (méth)acrylate alicyclique, et un oligomère d'acrylate d'uréthane ayant au moins deux groupes éthyléniquement insaturés (qui sont des liaisons doubles carbone-carbone polymérisables par rayonnement et des liaisons doubles éthyléniques) dans chaque molécule, et en ce que l'adhésif contient de 0,2 à 2,0 mmol/g d'un groupe éthyléniquement insaturé ; un procédé de production d'un ruban adhésif pour traitement de plaquette de semi-conducteur ; et un procédé de traitement de plaquette de semi-conducteur.
PCT/JP2017/007709 2016-03-17 2017-02-28 Ruban adhésif pour traitement de plaquette de semi-conducteur et procédé de traitement de plaquette de semi-conducteur WO2017159343A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020177031167A KR102089928B1 (ko) 2016-03-17 2017-02-28 반도체 웨이퍼 가공용 점착 테이프 및 반도체 웨이퍼의 가공 방법
CN201780001306.0A CN107960131B (zh) 2016-03-17 2017-02-28 半导体晶片加工用胶带和半导体晶片的加工方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016054269A JP6034522B1 (ja) 2016-03-17 2016-03-17 半導体ウェハ加工用粘着テープおよび半導体ウェハの加工方法
JP2016-054269 2016-03-17

Publications (1)

Publication Number Publication Date
WO2017159343A1 true WO2017159343A1 (fr) 2017-09-21

Family

ID=57419839

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/007709 WO2017159343A1 (fr) 2016-03-17 2017-02-28 Ruban adhésif pour traitement de plaquette de semi-conducteur et procédé de traitement de plaquette de semi-conducteur

Country Status (5)

Country Link
JP (1) JP6034522B1 (fr)
KR (1) KR102089928B1 (fr)
CN (1) CN107960131B (fr)
TW (1) TWI744290B (fr)
WO (1) WO2017159343A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110763255A (zh) * 2019-11-26 2020-02-07 衡阳开拓光电科技有限公司 一种光纤绕环固化工艺
WO2020100696A1 (fr) * 2018-11-12 2020-05-22 日立化成株式会社 Procédé de fabrication de dispositif à semi-conducteurs, et film adhésif pour traitement de tranche de semi-conducteur

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6200611B1 (ja) * 2016-03-17 2017-09-20 古河電気工業株式会社 半導体ウェハ加工用粘着テープ、半導体ウェハ加工用粘着テープの製造方法および半導体ウェハの加工方法
SG11201906797WA (en) 2017-02-24 2019-08-27 Furukawa Electric Co Ltd Mask-integrated surface protective tape, and method of producing a semiconductor chip using the same
CN109075055B (zh) * 2017-03-31 2023-08-15 古河电气工业株式会社 半导体晶片表面保护用胶带和半导体晶片的加工方法
JP7284856B2 (ja) * 2018-03-14 2023-05-31 マクセル株式会社 バックグラインド用粘着テープ
JPWO2022097472A1 (fr) * 2020-11-09 2022-05-12

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01249878A (ja) * 1988-03-31 1989-10-05 Furukawa Electric Co Ltd:The 半導体ウエハ固定用放射線硬化性粘着テープ
JP2011181899A (ja) * 2010-02-02 2011-09-15 Lintec Corp ダイシングシート
JP2015073056A (ja) * 2013-10-04 2015-04-16 リンテック株式会社 半導体加工用シート

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3620810B2 (ja) 1996-05-02 2005-02-16 リンテック株式会社 ウエハ保護用粘着シート
JP4369584B2 (ja) 2000-01-21 2009-11-25 日東電工株式会社 半導体ウエハ保持保護用粘着シート
JP5057697B2 (ja) * 2006-05-12 2012-10-24 日東電工株式会社 半導体ウエハ又は半導体基板加工用粘着シート
JP4861081B2 (ja) 2006-07-14 2012-01-25 電気化学工業株式会社 半導体部材固定用粘着シート及びそれを用いた電子部品製造方法。
JP5286084B2 (ja) * 2006-07-19 2013-09-11 積水化学工業株式会社 ダイシング・ダイボンディングテープ及び半導体チップの製造方法
JP5069662B2 (ja) * 2007-11-12 2012-11-07 リンテック株式会社 粘着シート
KR101140790B1 (ko) * 2010-03-30 2012-05-03 티티티케미칼 주식회사 웨이퍼 다이싱용 아크릴계 점착 조성물 및 이를 포함하는 다이싱 테이프
KR20110131772A (ko) * 2010-05-31 2011-12-07 주식회사 케이씨씨 자외선 경화성 점착수지 조성물 및 이를 포함하는 다이싱용 또는 표면보호용 점착 테이프
KR101198254B1 (ko) * 2010-05-31 2012-11-07 주식회사 케이씨씨 반도체 제조용 점·접착쉬트
JP5687897B2 (ja) * 2010-12-28 2015-03-25 日東電工株式会社 放射線硬化型粘着剤組成物及び粘着シート
CN102504623B (zh) * 2011-09-28 2014-01-08 中钞特种防伪科技有限公司 一种剥离层组合物及其制备方法和应用
JP2013122005A (ja) * 2011-12-09 2013-06-20 Samsung Yokohama Research Institute Co Ltd 半導体用感光性接着フィルムおよび当該フィルムを用いた半導体装置の製造方法
JP6092161B2 (ja) * 2014-07-03 2017-03-08 リンテック株式会社 表面保護フィルム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01249878A (ja) * 1988-03-31 1989-10-05 Furukawa Electric Co Ltd:The 半導体ウエハ固定用放射線硬化性粘着テープ
JP2011181899A (ja) * 2010-02-02 2011-09-15 Lintec Corp ダイシングシート
JP2015073056A (ja) * 2013-10-04 2015-04-16 リンテック株式会社 半導体加工用シート

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020100696A1 (fr) * 2018-11-12 2020-05-22 日立化成株式会社 Procédé de fabrication de dispositif à semi-conducteurs, et film adhésif pour traitement de tranche de semi-conducteur
CN112930584A (zh) * 2018-11-12 2021-06-08 昭和电工材料株式会社 半导体装置的制造方法及半导体晶圆加工用胶黏膜
JPWO2020100696A1 (ja) * 2018-11-12 2021-09-24 昭和電工マテリアルズ株式会社 半導体装置の製造方法及び半導体ウエハ加工用接着フィルム
TWI795609B (zh) * 2018-11-12 2023-03-11 日商昭和電工材料股份有限公司 半導體裝置的製造方法及半導體晶圓加工用接著膜
JP7384168B2 (ja) 2018-11-12 2023-11-21 株式会社レゾナック 半導体装置の製造方法及び半導体ウエハ加工用接着フィルム
CN110763255A (zh) * 2019-11-26 2020-02-07 衡阳开拓光电科技有限公司 一种光纤绕环固化工艺

Also Published As

Publication number Publication date
JP2017168739A (ja) 2017-09-21
KR20180020956A (ko) 2018-02-28
CN107960131B (zh) 2022-02-25
JP6034522B1 (ja) 2016-11-30
TWI744290B (zh) 2021-11-01
CN107960131A (zh) 2018-04-24
TW201802207A (zh) 2018-01-16
KR102089928B1 (ko) 2020-03-17

Similar Documents

Publication Publication Date Title
JP6034522B1 (ja) 半導体ウェハ加工用粘着テープおよび半導体ウェハの加工方法
JP5718515B1 (ja) 半導体ウエハ表面保護用粘着テープおよび半導体ウエハの加工方法
JP7079200B2 (ja) 半導体ウェハ表面保護用粘着テープ及び半導体ウェハの加工方法
JP5137538B2 (ja) 粘接着剤組成物、粘接着シートおよび半導体装置の製造方法
KR101518533B1 (ko) 반도체 장치 제조용 필름 롤
JP6053909B2 (ja) 半導体ウエハ表面保護用粘着テープおよびその製造方法
TW201906133A (zh) 切晶黏晶膜
JP5242830B1 (ja) 半導体ウェハ表面保護用粘着テープおよび半導体ウェハの製造方法
WO2005112091A1 (fr) Feuille de liaison adhésive, dispositif semi-conducteur utilisant ladite feuille et procede de fabrication dudit dispositif semi-conducteur
CN107112229B (zh) 半导体晶片表面保护用胶带
JP2010129816A (ja) 半導体チップ積層体および半導体チップ積層用接着剤組成物
TW201932558A (zh) 接著膜及附有切晶帶之接著膜
JP5089358B2 (ja) ウエハ加工用テープ
JP6200611B1 (ja) 半導体ウェハ加工用粘着テープ、半導体ウェハ加工用粘着テープの製造方法および半導体ウェハの加工方法
JP5237647B2 (ja) 粘接着剤組成物、粘接着シートおよび半導体装置の製造方法
JP2015220377A (ja) 粘接着フィルム一体型表面保護テープおよび粘接着フィルム一体型表面保護テープを用いた半導体チップの製造方法
JP2012209429A (ja) 半導体ウエハ加工用粘着テープ及び半導体ウエハの加工方法
JP5184685B1 (ja) 半導体ウエハ加工用テープ
JP5291040B2 (ja) ウエハ加工用粘着テープ
WO2020153499A1 (fr) Ruban adhésif sensible à la pression durcissable par une lumière ultraviolette destiné au traitement de tranches à semi-conducteurs, procédé de fabrication d'une puce semi-conductrice et procédé destiné à l'utilisation d'un ruban sensible à la pression durcissable par une lumière ultraviolette
JP2011249608A (ja) 半導体ウエハ表面保護用粘着テープ
JP2022153305A (ja) ダイシングダイボンディングシート及び半導体装置の製造方法
TW202101550A (zh) 工件加工用片材

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 20177031167

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17766346

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 17766346

Country of ref document: EP

Kind code of ref document: A1