WO2017155117A1 - 半導体センサチップ実装用接着剤及び半導体センサ - Google Patents
半導体センサチップ実装用接着剤及び半導体センサ Download PDFInfo
- Publication number
- WO2017155117A1 WO2017155117A1 PCT/JP2017/009816 JP2017009816W WO2017155117A1 WO 2017155117 A1 WO2017155117 A1 WO 2017155117A1 JP 2017009816 W JP2017009816 W JP 2017009816W WO 2017155117 A1 WO2017155117 A1 WO 2017155117A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- spacer
- adhesive
- semiconductor sensor
- less
- sensor chip
- Prior art date
Links
- 239000000853 adhesive Substances 0.000 title claims abstract description 64
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 64
- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 125000006850 spacer group Chemical group 0.000 claims abstract description 140
- 239000002245 particle Substances 0.000 claims abstract description 54
- 238000007906 compression Methods 0.000 claims abstract description 46
- 230000006835 compression Effects 0.000 claims abstract description 44
- 229920002050 silicone resin Polymers 0.000 claims abstract description 24
- 238000011084 recovery Methods 0.000 claims abstract description 13
- -1 acrylic compound Chemical class 0.000 claims description 57
- 229920001296 polysiloxane Polymers 0.000 claims description 23
- 239000012790 adhesive layer Substances 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 15
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 32
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 24
- 229910000077 silane Inorganic materials 0.000 description 22
- 239000000178 monomer Substances 0.000 description 21
- 229920005989 resin Polymers 0.000 description 15
- 239000011347 resin Substances 0.000 description 15
- 125000004432 carbon atom Chemical group C* 0.000 description 13
- 239000003054 catalyst Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 229910052697 platinum Inorganic materials 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 125000000217 alkyl group Chemical group 0.000 description 10
- 229920002545 silicone oil Polymers 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000013464 silicone adhesive Substances 0.000 description 9
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 8
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- WERYXYBDKMZEQL-UHFFFAOYSA-N 1,4-butanediol Substances OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- 230000002708 enhancing effect Effects 0.000 description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229920001971 elastomer Polymers 0.000 description 4
- MBGQQKKTDDNCSG-UHFFFAOYSA-N ethenyl-diethoxy-methylsilane Chemical compound CCO[Si](C)(C=C)OCC MBGQQKKTDDNCSG-UHFFFAOYSA-N 0.000 description 4
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 4
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 125000000962 organic group Chemical group 0.000 description 4
- 230000008447 perception Effects 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- 239000004342 Benzoyl peroxide Substances 0.000 description 3
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 235000019400 benzoyl peroxide Nutrition 0.000 description 3
- 229920001400 block copolymer Polymers 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 3
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 3
- ZLNAFSPCNATQPQ-UHFFFAOYSA-N ethenyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)C=C ZLNAFSPCNATQPQ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 229940059574 pentaerithrityl Drugs 0.000 description 3
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 125000005504 styryl group Chemical group 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- LTQBNYCMVZQRSD-UHFFFAOYSA-N (4-ethenylphenyl)-trimethoxysilane Chemical compound CO[Si](OC)(OC)C1=CC=C(C=C)C=C1 LTQBNYCMVZQRSD-UHFFFAOYSA-N 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 2
- URDOJQUSEUXVRP-UHFFFAOYSA-N 3-triethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C(C)=C URDOJQUSEUXVRP-UHFFFAOYSA-N 0.000 description 2
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 2
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 2
- YNWJPOVPFGCGLE-UHFFFAOYSA-N 4,4-diethoxybut-1-enylsilane Chemical compound C(C)OC(CC=C[SiH3])OCC YNWJPOVPFGCGLE-UHFFFAOYSA-N 0.000 description 2
- MZZPECHJKDVTOI-UHFFFAOYSA-N 4,4-dimethoxybut-1-enylsilane Chemical compound COC(CC=C[SiH3])OC MZZPECHJKDVTOI-UHFFFAOYSA-N 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- BXLNNBFOYDZVGN-UHFFFAOYSA-N bis(ethenyl)-ethyl-methylsilane Chemical compound CC[Si](C)(C=C)C=C BXLNNBFOYDZVGN-UHFFFAOYSA-N 0.000 description 2
- LKZYQDVVGTXQTR-UHFFFAOYSA-N but-1-enyl(dimethoxy)silane Chemical compound CCC=C[SiH](OC)OC LKZYQDVVGTXQTR-UHFFFAOYSA-N 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 125000000753 cycloalkyl group Chemical group 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- KQAHMVLQCSALSX-UHFFFAOYSA-N decyl(trimethoxy)silane Chemical compound CCCCCCCCCC[Si](OC)(OC)OC KQAHMVLQCSALSX-UHFFFAOYSA-N 0.000 description 2
- GAURFLBIDLSLQU-UHFFFAOYSA-N diethoxy(methyl)silicon Chemical compound CCO[Si](C)OCC GAURFLBIDLSLQU-UHFFFAOYSA-N 0.000 description 2
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 2
- VHPUZTHRFWIGAW-UHFFFAOYSA-N dimethoxy-di(propan-2-yl)silane Chemical compound CO[Si](OC)(C(C)C)C(C)C VHPUZTHRFWIGAW-UHFFFAOYSA-N 0.000 description 2
- CVQVSVBUMVSJES-UHFFFAOYSA-N dimethoxy-methyl-phenylsilane Chemical compound CO[Si](C)(OC)C1=CC=CC=C1 CVQVSVBUMVSJES-UHFFFAOYSA-N 0.000 description 2
- 239000000806 elastomer Substances 0.000 description 2
- FJKIXWOMBXYWOQ-UHFFFAOYSA-N ethenoxyethane Chemical compound CCOC=C FJKIXWOMBXYWOQ-UHFFFAOYSA-N 0.000 description 2
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 2
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 2
- BITPLIXHRASDQB-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane Chemical compound C=C[Si](C)(C)O[Si](C)(C)C=C BITPLIXHRASDQB-UHFFFAOYSA-N 0.000 description 2
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- MSRJTTSHWYDFIU-UHFFFAOYSA-N octyltriethoxysilane Chemical compound CCCCCCCC[Si](OCC)(OCC)OCC MSRJTTSHWYDFIU-UHFFFAOYSA-N 0.000 description 2
- 239000003208 petroleum Substances 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- UOHMMEJUHBCKEE-UHFFFAOYSA-N prehnitene Chemical compound CC1=CC=C(C)C(C)=C1C UOHMMEJUHBCKEE-UHFFFAOYSA-N 0.000 description 2
- 239000005060 rubber Substances 0.000 description 2
- 239000005288 shirasu porous glass Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229920000468 styrene butadiene styrene block copolymer Polymers 0.000 description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 2
- 238000003878 thermal aging Methods 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 2
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 2
- XYJRNCYWTVGEEG-UHFFFAOYSA-N trimethoxy(2-methylpropyl)silane Chemical compound CO[Si](OC)(OC)CC(C)C XYJRNCYWTVGEEG-UHFFFAOYSA-N 0.000 description 2
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 2
- LGROXJWYRXANBB-UHFFFAOYSA-N trimethoxy(propan-2-yl)silane Chemical compound CO[Si](OC)(OC)C(C)C LGROXJWYRXANBB-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 1
- HIYIGPVBMDKPCR-UHFFFAOYSA-N 1,1-bis(ethenoxymethyl)cyclohexane Chemical compound C=COCC1(COC=C)CCCCC1 HIYIGPVBMDKPCR-UHFFFAOYSA-N 0.000 description 1
- MWZJGRDWJVHRDV-UHFFFAOYSA-N 1,4-bis(ethenoxy)butane Chemical compound C=COCCCCOC=C MWZJGRDWJVHRDV-UHFFFAOYSA-N 0.000 description 1
- SAMJGBVVQUEMGC-UHFFFAOYSA-N 1-ethenoxy-2-(2-ethenoxyethoxy)ethane Chemical compound C=COCCOCCOC=C SAMJGBVVQUEMGC-UHFFFAOYSA-N 0.000 description 1
- OVGRCEFMXPHEBL-UHFFFAOYSA-N 1-ethenoxypropane Chemical compound CCCOC=C OVGRCEFMXPHEBL-UHFFFAOYSA-N 0.000 description 1
- ZIKLJUUTSQYGQI-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxypropoxy)propane Chemical compound CCOCC(C)OCC(C)OCC ZIKLJUUTSQYGQI-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- GZBSIABKXVPBFY-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)CO GZBSIABKXVPBFY-UHFFFAOYSA-N 0.000 description 1
- FXNDIJDIPNCZQJ-UHFFFAOYSA-N 2,4,4-trimethylpent-1-ene Chemical group CC(=C)CC(C)(C)C FXNDIJDIPNCZQJ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- DRLRGHZJOQGQEC-UHFFFAOYSA-N 2-(2-methoxypropoxy)propyl acetate Chemical compound COC(C)COC(C)COC(C)=O DRLRGHZJOQGQEC-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- SBYMUDUGTIKLCR-UHFFFAOYSA-N 2-chloroethenylbenzene Chemical compound ClC=CC1=CC=CC=C1 SBYMUDUGTIKLCR-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- ROGIWVXWXZRRMZ-UHFFFAOYSA-N 2-methylbuta-1,3-diene;styrene Chemical compound CC(=C)C=C.C=CC1=CC=CC=C1 ROGIWVXWXZRRMZ-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- DOYKFSOCSXVQAN-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CCO[Si](C)(OCC)CCCOC(=O)C(C)=C DOYKFSOCSXVQAN-UHFFFAOYSA-N 0.000 description 1
- ATVJXMYDOSMEPO-UHFFFAOYSA-N 3-prop-2-enoxyprop-1-ene Chemical compound C=CCOCC=C ATVJXMYDOSMEPO-UHFFFAOYSA-N 0.000 description 1
- DBCAQXHNJOFNGC-UHFFFAOYSA-N 4-bromo-1,1,1-trifluorobutane Chemical compound FC(F)(F)CCCBr DBCAQXHNJOFNGC-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 1
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 description 1
- XMSXQFUHVRWGNA-UHFFFAOYSA-N Decamethylcyclopentasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 XMSXQFUHVRWGNA-UHFFFAOYSA-N 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- 239000004606 Fillers/Extenders Substances 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical group CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- RMKZLFMHXZAGTM-UHFFFAOYSA-N [dimethoxy(propyl)silyl]oxymethyl prop-2-enoate Chemical compound CCC[Si](OC)(OC)OCOC(=O)C=C RMKZLFMHXZAGTM-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229920001893 acrylonitrile styrene Polymers 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- FYBYQXQHBHTWLP-UHFFFAOYSA-N bis(silyloxysilyloxy)silane Chemical compound [SiH3]O[SiH2]O[SiH2]O[SiH2]O[SiH3] FYBYQXQHBHTWLP-UHFFFAOYSA-N 0.000 description 1
- ZXYULJCZWBKBCX-UHFFFAOYSA-N but-1-enyl(diethoxy)silane Chemical compound C(C)C=C[SiH](OCC)OCC ZXYULJCZWBKBCX-UHFFFAOYSA-N 0.000 description 1
- 239000001191 butyl (2R)-2-hydroxypropanoate Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- OIWOHHBRDFKZNC-UHFFFAOYSA-N cyclohexyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1CCCCC1 OIWOHHBRDFKZNC-UHFFFAOYSA-N 0.000 description 1
- MEWFSXFFGFDHGV-UHFFFAOYSA-N cyclohexyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C1CCCCC1 MEWFSXFFGFDHGV-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical class OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- YQGOWXYZDLJBFL-UHFFFAOYSA-N dimethoxysilane Chemical compound CO[SiH2]OC YQGOWXYZDLJBFL-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000012674 dispersion polymerization Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- AFOSIXZFDONLBT-UHFFFAOYSA-N divinyl sulfone Chemical compound C=CS(=O)(=O)C=C AFOSIXZFDONLBT-UHFFFAOYSA-N 0.000 description 1
- JZKFHQMONDVVNF-UHFFFAOYSA-N dodecyl sulfate;tris(2-hydroxyethyl)azanium Chemical compound OCCN(CCO)CCO.CCCCCCCCCCCCOS(O)(=O)=O JZKFHQMONDVVNF-UHFFFAOYSA-N 0.000 description 1
- 238000004945 emulsification Methods 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 238000010556 emulsion polymerization method Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- MEGHWIAOTJPCHQ-UHFFFAOYSA-N ethenyl butanoate Chemical compound CCCC(=O)OC=C MEGHWIAOTJPCHQ-UHFFFAOYSA-N 0.000 description 1
- GLVVKKSPKXTQRB-UHFFFAOYSA-N ethenyl dodecanoate Chemical compound CCCCCCCCCCCC(=O)OC=C GLVVKKSPKXTQRB-UHFFFAOYSA-N 0.000 description 1
- AFSIMBWBBOJPJG-UHFFFAOYSA-N ethenyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC=C AFSIMBWBBOJPJG-UHFFFAOYSA-N 0.000 description 1
- IRTACFOVZDBFEX-UHFFFAOYSA-N ethenyl-diethoxy-ethylsilane Chemical compound CCO[Si](CC)(C=C)OCC IRTACFOVZDBFEX-UHFFFAOYSA-N 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- STVZJERGLQHEKB-UHFFFAOYSA-N ethylene glycol dimethacrylate Substances CC(=C)C(=O)OCCOC(=O)C(C)=C STVZJERGLQHEKB-UHFFFAOYSA-N 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 239000012760 heat stabilizer Substances 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 125000000555 isopropenyl group Chemical group [H]\C([H])=C(\*)C([H])([H])[H] 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000004611 light stabiliser Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- XJRBAMWJDBPFIM-UHFFFAOYSA-N methyl vinyl ether Chemical compound COC=C XJRBAMWJDBPFIM-UHFFFAOYSA-N 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 125000006340 pentafluoro ethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002685 polymerization catalyst Substances 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920000346 polystyrene-polyisoprene block-polystyrene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- SCUZVMOVTVSBLE-UHFFFAOYSA-N prop-2-enenitrile;styrene Chemical compound C=CC#N.C=CC1=CC=CC=C1 SCUZVMOVTVSBLE-UHFFFAOYSA-N 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 238000007127 saponification reaction Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229920006132 styrene block copolymer Polymers 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 238000010558 suspension polymerization method Methods 0.000 description 1
- WYKYCHHWIJXDAO-UHFFFAOYSA-N tert-butyl 2-ethylhexaneperoxoate Chemical compound CCCCC(CC)C(=O)OOC(C)(C)C WYKYCHHWIJXDAO-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- JRSJRHKJPOJTMS-UHFFFAOYSA-N trimethoxy(2-phenylethenyl)silane Chemical compound CO[Si](OC)(OC)C=CC1=CC=CC=C1 JRSJRHKJPOJTMS-UHFFFAOYSA-N 0.000 description 1
- GRPURDFRFHUDSP-UHFFFAOYSA-N tris(prop-2-enyl) benzene-1,2,4-tricarboxylate Chemical compound C=CCOC(=O)C1=CC=C(C(=O)OCC=C)C(C(=O)OCC=C)=C1 GRPURDFRFHUDSP-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
- 229960000834 vinyl ether Drugs 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
- H01L23/4828—Conductive organic material or pastes, e.g. conductive adhesives, inks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
- C08L25/02—Homopolymers or copolymers of hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/08—Macromolecular additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J171/00—Adhesives based on polyethers obtained by reactions forming an ether link in the main chain; Adhesives based on derivatives of such polymers
- C09J171/02—Polyalkylene oxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
- C08G65/02—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring
- C08G65/32—Polymers modified by chemical after-treatment
- C08G65/329—Polymers modified by chemical after-treatment with organic compounds
- C08G65/336—Polymers modified by chemical after-treatment with organic compounds containing silicon
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/05611—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05639—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05655—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05666—Titanium [Ti] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/0568—Molybdenum [Mo] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05684—Tungsten [W] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8312—Aligning
- H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
- H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
Definitions
- the present invention relates to an adhesive for mounting a semiconductor sensor chip used for mounting a semiconductor sensor chip.
- the present invention also relates to a semiconductor sensor using the above adhesive.
- Patent Document 1 a second adhesive that is formed of a silicone-based resin and maintains a constant distance between the package and the circuit chip and a silicone-based resin that bonds the package and the circuit chip.
- a sensor device comprising an adhesive is disclosed.
- the first adhesive functions as a spacer.
- Patent Document 2 discloses that in a three-axis acceleration sensor, a silicon rubber resin kneaded with a spherical spacer is used as an adhesive.
- the spherical spacer is a hard plastic.
- the adhesive described in Patent Document 1 may have low heat resistance. Furthermore, in the adhesive described in Patent Document 1, cracks and peeling may occur due to thermal shock, and the cold-heat cycle characteristics may be low.
- an adhesive used for mounting a semiconductor sensor chip includes a silicone resin and a spacer, and the spacer has a 10% compression elastic modulus of 10 N / mm 2 or more, 2000 N / and mm 2 or less, the compression recovery rate of the spacer is not more than 20%, wherein the average particle diameter of the spacers, 10 [mu] m or more and 200 ⁇ m or less, the semiconductor sensor chip mounting adhesive (hereinafter as adhesive May be provided).
- the ratio of the 10% compression modulus of the spacer after heating to the 10% compression modulus of the spacer before heating is 0.95 or more and 1.05 or less.
- the spacer included in the adhesive is there a spacer having an average particle diameter of 1.5 times or more with respect to the average particle diameter of the spacer?
- the number of spacers having an average particle diameter of 1.5 times or more with respect to the average particle diameter of the spacers is 0.1% or less.
- the spacer is a silicone spacer.
- the spacer is a polymer of a (meth) acrylic compound having an isobornyl group.
- the semiconductor device includes a first member, a semiconductor sensor chip that is a second member, and an adhesive layer that bonds the first member and the second member, A semiconductor sensor is provided in which the adhesive layer is a cured product of the above-described adhesive for mounting a semiconductor sensor chip.
- the adhesive for mounting a semiconductor sensor chip according to the present invention includes a silicone resin and a spacer, wherein the spacer has a 10% compression elastic modulus of 10 N / mm 2 or more and 2000 N / mm 2 or less, and the compression of the spacer Since the recovery rate is 20% or less and the average particle size of the spacer is 10 ⁇ m or more and 200 ⁇ m or less, noise perception can be reduced and the heat resistance and the thermal cycle resistance can be improved.
- FIG. 1 is a sectional view showing an example of a semiconductor sensor using an adhesive for mounting a semiconductor sensor chip according to the present invention.
- the adhesive for mounting a semiconductor sensor chip according to the present invention (hereinafter sometimes referred to as an adhesive) is an adhesive used for mounting a semiconductor sensor chip.
- the adhesive according to the present invention includes a silicone resin and a spacer.
- the spacer has a 10% compression modulus of 10 N / mm 2 or more and 2000 N / mm 2 or less.
- the compression recovery rate of the spacer is 20% or less.
- the spacer has an average particle size of 10 ⁇ m or more and 200 ⁇ m or less.
- the present invention since the above-described configuration is provided, noise perception can be reduced and heat resistance can be increased. Moreover, as heat resistance, the adhesive strength at high temperature can be increased. Furthermore, in this invention, since the structure mentioned above is provided, a cold-heat-resistant cycling characteristic can also be improved. In the present invention, not only one of the heat resistance and the heat / cool cycle characteristics but also both can be enhanced.
- the 10% compression elastic modulus is a compression elastic modulus when the spacer is compressed 10%.
- the 10% compression modulus of the spacer is 10 N / mm 2 or more and 2000 N / mm 2 or less.
- the 10% compression modulus of the spacer is preferably 500 N / mm 2 or less, more preferably 100 N / mm 2 or less.
- the 10% compression modulus of the spacer can be measured as follows.
- the spacer is compressed with a smooth indenter end face of a cylinder (diameter 50 ⁇ m, made of diamond) under conditions where a maximum test load of 20 mN is applied for 60 seconds.
- the load value (N) and compression displacement (mm) at this time are measured. From the measured value obtained, the compression elastic modulus can be obtained by the following formula.
- the micro compression tester for example, “Fischer Scope H-100” manufactured by Fischer is used.
- the compression recovery rate of the spacer is 20% or less. From the viewpoint of further enhancing the gap control effect, the compression recovery rate of the spacer is preferably 15% or less, more preferably 10% or less.
- the lower limit of the compression recovery rate of the spacer is not particularly limited, but is usually 1% or more.
- the compression recovery rate of the spacer can be measured as follows.
- ⁇ Spray the spacer on the sample table With respect to one dispersed spacer, a load (reverse load value) is applied in the center direction of the spacer until the spacer is compressed and deformed by 30% using a micro compression tester. Thereafter, unloading is performed up to the origin load value (0.40 mN). The load-compression displacement during this period is measured, and the compression recovery rate can be obtained from the following equation.
- the load speed is 0.33 mN / sec.
- the micro compression tester for example, “Fischer Scope H-100” manufactured by Fischer is used.
- Compression recovery rate (%) [(L1-L2) / L1] ⁇ 100
- L1 Compressive displacement from the origin load value to the reverse load value when applying a load
- L2 Unloading displacement from the reverse load value to the origin load value when releasing the load
- the average particle diameter of the spacer is 10 ⁇ m or more and 200 ⁇ m or less. From the viewpoint of further enhancing the gap control effect, the average particle diameter of the spacer is preferably 20 ⁇ m or more, more preferably 30 ⁇ m or more, preferably 150 ⁇ m or less, more preferably 110 ⁇ m or less, and even more preferably 100 ⁇ m or less. .
- the average particle diameter is obtained by observing the spacers with a scanning electron microscope and arithmetically averaging the maximum diameters of 50 arbitrarily selected spacers in the observed image.
- the content of the spacer is preferably 0.1% by weight or more, more preferably 1% by weight or more, preferably 10% by weight, in 100% by weight of the adhesive. Hereinafter, it is more preferably 5% by weight or less.
- the spacer before heating has a 10% compression modulus of the spacer after heating.
- 10% compression modulus (10% compression modulus after heating / 10% compression modulus before heating) is preferably 0.95 or more, more preferably 0.98 or more, and preferably 1. 05 or less, more preferably 1.02 or less.
- the spacer included in the adhesive there is no spacer having an average particle diameter of 1.5 times or more with respect to the average particle diameter of the spacer. .
- the spacer contained in the adhesive The total number of the spacers is preferably 100%, and the number of spacers having an average particle size of 1.5 times or more with respect to the average particle size of the spacers is preferably 0.1% or less. More preferably, it is present in a number of 05% or less.
- the spacer is preferably a silicone resin, and is preferably a silicone spacer.
- the spacer is preferably silicone particles.
- the spacer does not contain a platinum catalyst or contains a platinum catalyst at 100 ppm or less.
- a platinum catalyst the lower the platinum catalyst content, the better.
- the platinum catalyst content is more preferably 80 ppm or less, still more preferably 60 ppm or less, still more preferably 50 ppm or less, still more preferably 40 ppm or less, particularly preferably 30 ppm or less, and particularly preferably 20 ppm or less, most preferably 10 ppm or less. It is.
- silicone particles are often obtained by polymerizing monomers using a platinum catalyst.
- the platinum catalyst is contained inside, and the platinum catalyst content exceeds 100 ppm.
- silicone particles obtained without using a platinum catalyst generally do not contain a platinum catalyst.
- the material of the silicone particles is preferably organopolysiloxane, more preferably silane alkoxide.
- organopolysiloxane and the silane alkoxide may be used alone or in combination of two or more.
- the silane alkoxide is a silane alkoxide A represented by the following formula (1A) or a silane alkoxide B represented by the following formula (1B). It is preferable to contain.
- the silane alkoxide may contain a silane alkoxide A represented by the following formula (1A) or may contain a silane alkoxide B represented by the following formula (1B).
- R1 represents a hydrogen atom, a phenyl group or an alkyl group having 1 to 30 carbon atoms
- R2 represents an alkyl group having 1 to 6 carbon atoms
- n represents an integer of 0 to 2.
- the plurality of R1s may be the same or different.
- Several R2 may be the same and may differ.
- R1 in the formula (1A) is an alkyl group having 1 to 30 carbon atoms
- specific examples of R1 include a methyl group, an ethyl group, a propyl group, an isopropyl group, an isobutyl group, an n-hexyl group, and a cyclohexyl group.
- This alkyl group preferably has 10 or less carbon atoms, more preferably 6 or less.
- the alkyl group includes a cycloalkyl group.
- R2 examples include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, and an isobutyl group.
- silane alkoxide A examples include tetramethoxysilane, tetraethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, isopropyltrimethoxysilane, isobutyltrimethoxysilane, cyclohexyltri Examples include methoxysilane, n-hexyltrimethoxysilane, n-octyltriethoxysilane, n-decyltrimethoxysilane, phenyltrimethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, diisopropyldimethoxysilane, and diphenyldimethoxysilane. . Silane alkoxides other than these may be used.
- R1 represents a hydrogen atom, a phenyl group, an alkyl group having 1 to 30 carbon atoms, or an organic group having 1 to 30 carbon atoms having a polymerizable double bond
- R2 represents 1 to 6 carbon atoms
- n represents an integer of 0-2.
- the plurality of R1s may be the same or different.
- Several R2 may be the same and may differ.
- at least one R1 is an organic group having 1 to 30 carbon atoms having a polymerizable double bond.
- At least one R1 is preferably a vinyl group, a styryl group or a (meth) acryloxy group, more preferably a vinyl group or a (meth) acryloxy group, and even more preferably a vinyl group.
- R1 in the formula (1B) is an alkyl group having 1 to 30 carbon atoms
- specific examples of R1 include a methyl group, an ethyl group, a propyl group, an isopropyl group, an isobutyl group, an n-hexyl group, and a cyclohexyl group.
- This alkyl group preferably has 10 or less carbon atoms, more preferably 6 or less.
- the alkyl group includes a cycloalkyl group.
- Examples of the polymerizable double bond include a carbon-carbon double bond.
- R1 is an organic group having 1 to 30 carbon atoms having a polymerizable double bond
- specific examples of R1 include vinyl group, styryl group, allyl group, isopropenyl group, and 3- (meth) acrylic group.
- Examples include a loxyalkyl group.
- Examples of the styryl group include p-styryl group, o-styryl group, and m-styryl group.
- Examples of the (meth) acryloxyalkyl group include a (meth) acryloxymethyl group, a (meth) acryloxyethyl group, and a (meth) acryloxypropyl group.
- the number of carbon atoms of the organic group having 1 to 30 carbon atoms having a polymerizable double bond is preferably 2 or more, preferably 30 or less, more preferably 10 or less.
- (meth) acryloxy refers to acryloxy and methacryloxy.
- R2 examples include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, and an isobutyl group.
- the silane alkoxide preferably contains dialkoxysilane.
- the hydrolyzed condensate of the silane alkoxide is not less than 0% by weight (unused) of monoalkoxysilane in 100% by weight of silane alkoxide, 20 Hydrolysis of a silane alkoxide containing not more than 10% by weight, dialkoxysilane not less than 70% by weight and not more than 99.9% by weight, and trialkoxysilane and tetraalkoxysilane in total of not less than 0.1% by weight and not more than 30% by weight Condensate is preferable, and in 100% by weight of silane alkoxide, 0% by weight (unused) of monoalkoxysilane, 15% by weight or less, 75% by weight or more of dialkoxysilane, 99% by weight or less, and trialkoxysilane And tetraalkoxysilane in total containing 1% by weight or more and 25% by weight or less And more preferably the hydrolysis-condensation product.
- the silane alkoxide preferably includes a silane alkoxide having a polymerizable functional group, and more preferably includes a silane alkoxide having a polymerizable double bond.
- the silane alkoxide having a polymerizable double bond include vinyltrimethoxysilane, vinyltriethoxysilane, dimethoxymethylvinylsilane, dimethoxyethylvinylsilane, diethoxymethylvinylsilane, diethoxyethylvinylsilane, ethylmethyldivinylsilane, methylvinyl.
- cyclic siloxane may be used, and modified (reactive) silicone oil may be used.
- modified silicone oil include one-end modified silicone oil, both-end silicone oil, and side chain type silicone oil.
- an oligomer is obtained by condensing the silane alkoxide in advance, and then a polymerization reaction is performed by a suspension polymerization method, a dispersion polymerization method, a miniemulsion polymerization method, an emulsion polymerization method, or the like. And a method for producing substrate particles.
- the spacer is preferably a polymer containing a polymerizable monomer having an ethylenically unsaturated group.
- Examples of the polymerizable monomer having an ethylenically unsaturated group include non-crosslinkable monomers and crosslinkable monomers.
- non-crosslinkable monomer examples include, as vinyl compounds, styrene monomers such as styrene, ⁇ -methyl styrene, chlorostyrene; methyl vinyl ether, ethyl vinyl ether, propyl vinyl ether, 1,4-butanediol diester.
- Vinyl ether compounds such as vinyl ether, cyclohexanedimethanol divinyl ether, diethylene glycol divinyl ether; acid vinyl ester compounds such as vinyl acetate, vinyl butyrate, vinyl laurate, vinyl stearate; halogen-containing monomers such as vinyl chloride, vinyl fluoride;
- (Meth) acrylic compounds include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, lauric Alkyl (meth) acrylate compounds such as (meth) acrylate, cetyl (meth) acrylate, stearyl (meth) acrylate, cyclohexyl (meth) acrylate, isobornyl (meth) acrylate; 2-hydroxyethyl (meth) acrylate, glycerol (meth) Oxygen
- crosslinkable monomer examples include vinyl monomers such as vinyl compounds such as divinylbenzene, 1,4-divinyloxybutane and divinylsulfone; (meth) acrylic compounds such as tetramethylolmethanetetra ( (Meth) acrylate, tetramethylolmethane tri (meth) acrylate, tetramethylolmethane di (meth) acrylate, trimethylolpropane tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, dipentaerythritol penta (meth) acrylate, glycerol Tri (meth) acrylate, glycerol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, (poly) tetramethyleneglycol Polyfunctional (meth) acrylate
- (meth) acrylate indicates acrylate and methacrylate.
- (meth) acryl refers to acrylic and methacrylic.
- the spacer is preferably a polymer of a (meth) acrylic compound, and is a polymer of a (meth) acrylic compound having an isobornyl group. More preferably.
- the (meth) acrylic compound having an isobornyl group include isobornyl (meth) acrylate and isobornyl di (meth) acrylate.
- the adhesive includes the above-described spacer and silicone resin.
- the spacer is preferably dispersed in a silicone resin and used as an adhesive.
- the silicone resin preferably has fluidity.
- the silicone resin is preferably pasty.
- the paste form includes liquid.
- the adhesive may be a one-component type in which a main agent and a curing agent are mixed in advance, or a two-component type in which a main agent and a curing agent are separated.
- the adhesive may be a condensation curable type or an addition curable type.
- the adhesive may be cured using a catalyst such as platinum, or may be cured by heating or moisture.
- the silicone resin is not particularly limited.
- the silicone resin may be an organopolysiloxane compound, and the organopolysiloxane may have a hydroxyl group at a terminal or a vinyl group at a terminal.
- the silicone resin may be a polypropylene oxide having a methyldimethoxysilyl group.
- the adhesive may contain a vinyl resin, a thermoplastic resin, a curable resin, a thermoplastic block copolymer, an elastomer and a solvent in addition to the silicone resin and the spacer.
- a vinyl resin a thermoplastic resin
- a curable resin a thermoplastic block copolymer
- an elastomer a solvent in addition to the silicone resin and the spacer.
- Examples of the vinyl resin include vinyl acetate resin, acrylic resin, and styrene resin.
- examples of the thermoplastic resin include polyolefin resin, ethylene-vinyl acetate copolymer, and polyamide resin.
- examples of the curable resin include an epoxy resin, a urethane resin, a polyimide resin, and an unsaturated polyester resin.
- the curable resin may be a room temperature curable resin, a thermosetting resin, a photocurable resin, or a moisture curable resin.
- the curable resin may be used in combination with a curing agent.
- thermoplastic block copolymer examples include a styrene-butadiene-styrene block copolymer, a styrene-isoprene-styrene block copolymer, a hydrogenated product of a styrene-butadiene-styrene block copolymer, and a styrene-isoprene. -Hydrogenated products of styrene block copolymers.
- the elastomer examples include styrene-butadiene copolymer rubber and acrylonitrile-styrene block copolymer rubber.
- Examples of the solvent include water and organic solvents.
- An organic solvent is preferred because it can be easily removed.
- Examples of the organic solvent include alcohol compounds such as ethanol, ketone compounds such as acetone, methyl ethyl ketone, and cyclohexanone, aromatic hydrocarbon compounds such as toluene, xylene, and tetramethylbenzene, cellosolve, methyl cellosolve, butyl cellosolve, carbitol, and methylcarbitol.
- the adhesive includes, for example, a filler, an extender, a softener, a plasticizer, a polymerization catalyst, a curing catalyst, a colorant, an antioxidant, a heat stabilizer, a light stabilizer, Various additives such as ultraviolet absorbers, lubricants, antistatic agents and flame retardants may be included.
- the method for dispersing the spacer in the silicone resin may be any conventionally known dispersion method and is not particularly limited.
- Examples of a method for dispersing the spacer in the silicone resin include a method in which the spacer is added to the silicone resin and then kneaded and dispersed with a planetary mixer or the like, and the spacer is homogenized in water or an organic solvent. Etc., and then added to the silicone resin, kneaded with a planetary mixer, etc. and dispersed, and after the silicone resin is diluted with water or an organic solvent, the spacer is added. And a method of kneading and dispersing with a planetary mixer or the like.
- the content of the silicone resin is preferably 70% by weight or more, more preferably 80% by weight in 100% by weight of the adhesive. It is above, Preferably it is 99 weight% or less, More preferably, it is 95 weight% or less.
- a semiconductor sensor according to the present invention includes a first member, a semiconductor sensor chip that is a second member, and an adhesive layer that bonds the first and second members.
- the adhesive layer is formed of a cured product of the adhesive.
- FIG. 1 is a cross-sectional view showing an example of a semiconductor sensor using an adhesive for mounting a semiconductor sensor chip according to the present invention.
- a semiconductor sensor 1 shown in FIG. 1 includes a first member 3, a semiconductor sensor chip that is a second member 4, and an adhesive layer 5 that bonds the first member 3 and the second member 4.
- the adhesive layer 5 is a cured product of an adhesive including the spacer 2 and the silicone resin.
- the spacer 2 exists between the first member 3 and the second member 4, and the first member 3 and the second member 4 are horizontally bonded at a constant interval (gap). .
- the manufacturing method of the semiconductor sensor is not particularly limited.
- An example of a method for manufacturing a semiconductor sensor includes a method in which the adhesive is disposed between a first member and a second member to obtain a laminate, and then the laminate is heated and pressurized.
- the first member include electronic components such as semiconductor chips, capacitors and diodes, and electronic components such as printed circuit boards, flexible printed circuit boards, glass epoxy substrates, and glass substrates.
- the first member is preferably an electronic component.
- the adhesive is preferably an adhesive for bonding electronic components.
- the semiconductor sensor chip is preferably a pressure sensor.
- the first member may have a first electrode on the surface.
- the second member may have a second electrode on the surface.
- the electrode provided on the member include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a silver electrode, a titanium electrode, a molybdenum electrode, and a tungsten electrode.
- the electrode is preferably a gold electrode, a nickel electrode, a titanium electrode, a tin electrode, or a copper electrode.
- the electrode is preferably an aluminum electrode, a titanium electrode, a copper electrode, a molybdenum electrode, or a tungsten electrode.
- the electrode formed only with aluminum may be sufficient and the electrode by which the aluminum layer was laminated
- the material for the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element.
- the trivalent metal element include Sn, Al, and Ga.
- a solution A was prepared by dissolving 0.5 parts by weight of tert-butyl-2-ethylperoxyhexanoate (polymerization initiator, “Perbutyl O” manufactured by NOF Corporation) in 30 parts by weight of the obtained silicone oligomer. .
- aqueous solution B was prepared by mixing 80 parts by weight of a 5 wt% aqueous solution of “GOHSENOL GH-20” manufactured by Nippon Synthetic Chemical Co., Ltd. After the said solution A was put into the separable flask installed in the warm bath, the said aqueous solution B was added.
- spacer 1 In a 500 ml separable flask placed in a hot tub, 6.5 parts by weight of the obtained silicone particles, 0.6 parts by weight of hexadecyltrimethylammonium bromide, 240 parts by weight of distilled water, and 120 parts by weight of methanol are added. I put it in. After stirring at 40 ° C. for 1 hour, 3.0 parts by weight of divinylbenzene and 0.5 part by weight of styrene were added, the temperature was raised to 75 ° C., and the mixture was stirred for 0.5 hours. Thereafter, 0.4 part by weight of 2,2′-azobis (isobutyric acid) dimethyl was added, and the reaction was carried out with stirring for 8 hours. The whole amount of the polymerized particles was washed with water by centrifugation to obtain a spacer 1. In the obtained spacer 1, the average particle diameter was 20.5 ⁇ m, and the CV value of the particle diameter was 3.5%.
- spacer 2 was obtained in the same manner as in the preparation of the spacer 1 except that both-end acrylic silicone oil (“X-22-2445” manufactured by Shin-Etsu Chemical Co., Ltd.) was used instead of the silicone oligomer.
- the average particle diameter was 20.3 ⁇ m, and the CV value of the particle diameter was 3.6%.
- Example 1 Preparation of silicone adhesive
- One-component thermosetting silicone adhesive TSE322 manufactured by Momentive Performance Materials
- spacer 1 spacer 1 as gap control particles so that the content in the resulting adhesive would be 2% by weight.
- the mixture was stirred with a stirrer and dispersed uniformly to prepare a silicone adhesive.
- Example 2 A pressure sensor structure was obtained in the same manner as in Example 1 except that the spacer 2 was used instead of the spacer 1 when preparing the silicone adhesive.
- Example 3 A pressure sensor structure was obtained in the same manner as in Example 1 except that the spacer 3 was used instead of the spacer 1 when preparing the silicone adhesive.
- Example 1 A pressure sensor structure was obtained in the same manner as in Example 1 except that the spacer A was used instead of the spacer 1 when preparing the silicone adhesive.
- Example 2 A pressure sensor structure was obtained in the same manner as in Example 1 except that the spacer B was used in place of the spacer 1 when preparing the silicone adhesive.
- Example 3 A pressure sensor structure was obtained in the same manner as in Example 1 except that the spacer C was used instead of the spacer 1 when preparing the silicone adhesive.
- connection strength The shear strength at 260 ° C of the obtained pressure sensor structure was measured. From the shear strength, heat resistance: connection strength was determined.
- Shear strength is 150 N / cm 2 or more ⁇ : Shear strength is 100 N / cm 2 or more and less than 150 N / cm 2 ⁇ : Shear strength is less than 100 N / cm 2
- the sample was observed with a stereomicroscope ("SMZ-10" manufactured by Nikon Corporation). It was observed whether or not the adhesive layer was cracked or whether or not the adhesive layer was peeled off from the substrate.
- the cold / heat resistance cycle characteristics were determined according to the following criteria.
- the 10% compression modulus of the spacer contained in the adhesive is 2000 N / mm 2 or less, and the spacer is relatively soft. Therefore, noise detection can be reduced in the pressure sensor structure. confirmed.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Materials Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Measuring Fluid Pressure (AREA)
- Die Bonding (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
本発明に係る半導体センサチップ実装用接着剤(以下、接着剤と記載することがある)は、半導体センサチップの実装に用いられる接着剤である。本発明に係る接着剤は、シリコーン樹脂とスペーサとを含む。
F:スペーサが10%圧縮変形したときの荷重値(N)
S:スペーサが10%圧縮変形したときの圧縮変位(mm)
R:スペーサの半径(mm)
L1:負荷を与えるときの原点用荷重値から反転荷重値に至るまでの圧縮変位
L2:負荷を解放するときの反転荷重値から原点用荷重値に至るまでの除荷変位
本発明に係る半導体センサは、第1の部材と、第2の部材である半導体センサチップと、第1,第2の部材を接着している接着層とを備える。本発明に係る半導体センサでは、上記接着層が、上記接着剤の硬化物により形成されている。
シリコーンオリゴマーの作製:
温浴槽内に設置した100mlのセパラブルフラスコに、1,3-ジビニルテトラメチルジシロキサン1重量部と、0.5重量%p-トルエンスルホン酸水溶液20重量部とを入れた。40℃で1時間撹拌した後、炭酸水素ナトリウム0.05重量部を添加した。その後、ジメトキシメチルフェニルシラン10重量部、ジメチルジメトキシシラン49重量部、トリメチルメトキシシラン0.6重量部、及びメチルトリメトキシシラン3.6重量部を添加し、1時間撹拌を行った。その後、10重量%水酸化カリウム水溶液1.9重量部を添加して、85℃まで昇温してアスピレーターで減圧しながら、10時間撹拌、反応を行った。反応終了後、常圧に戻し40℃まで冷却して、酢酸0.2重量部を添加し、12時間以上分液漏斗内で静置した。二層分離後の下層を取り出して、エバポレーターにて精製することでシリコーンオリゴマーを得た。
得られたシリコーンオリゴマー30重量部に、tert-ブチル-2-エチルペルオキシヘキサノアート(重合開始剤、日油社製「パーブチルO」)0.5重量部を溶解させた溶解液Aを用意した。また、イオン交換水150重量部に、ラウリル硫酸トリエタノールアミン塩の40重量%水溶液(乳化剤)0.8重量部と、ポリビニルアルコール(重合度:約2000、けん化度:86.5~89モル%、日本合成化学社製「ゴーセノールGH-20」)の5重量%水溶液80重量部とを混合して、水溶液Bを用意した。温浴槽中に設置したセパラブルフラスコに、上記溶解液Aを入れた後、上記水溶液Bを添加した。その後、Shirasu Porous Glass(SPG)膜(細孔平均径約20μm)を用いることで、乳化を行った。その後、85℃に昇温して、9時間重合を行った。重合後の粒子の全量を遠心分離により水洗浄した後、分級操作を行ってシリコーン粒子を得た。
温浴槽内に設置した500mlのセパラブルフラスコに、得られたシリコーン粒子6.5重量部と、ヘキサデシルトリメチルアンモニウムブロミド0.6重量部と、蒸留水240重量部と、メタノール120重量部とを入れた。40℃で1時間攪拌した後、ジビニルベンゼン3.0重量部とスチレン0.5重量部とを添加して、75℃まで昇温して0.5時間攪拌を行った。その後、2,2’-アゾビス(イソ酪酸)ジメチル0.4重量部を入れて8時間攪拌、反応を行った。重合後の粒子の全量を遠心分離により水洗浄して、スペーサ1を得た。得られたスペーサ1では、平均粒子径は20.5μm、粒子径のCV値は3.5%であった。
シリコーンオリゴマーの代わりに両末端アクリルシリコーンオイル(信越化学工業社製「X-22-2445」)を用いたこと以外はスペーサ1の作製と同様にして、スペーサ2を得た。得られたスペーサ2では、平均粒子径は20.3μm、粒子径のCV値は3.6%であった。
エチレングリコールジメタクリレート100gと、イソボルニルアクリレート800gと、シクロヘキシルメタクリレート100gと、過酸化ベンゾイル35gとを混合し、均一に溶解させて、モノマー混合液を得た。1重量%ポリビニルアルコール水溶液5kgを作製し、反応釜に入れた。この反応釜の中に上記モノマー混合液を更に入れ、2~4時間攪拌することで、モノマー混合液の液滴が所定の粒子径になるように、粒子径を調整した。この後90℃の窒素雰囲気下で9時間反応を行い、スペーサ3を得た。得られたスペーサ3を熱水にて数回洗浄した後、分級操作を行った。得られたスペーサ3では、平均粒子径は20.1μm、粒子径のCV値は3.1%であった。
市販の20μmのシリカ粒子「ミクロパールSI」(積水化学工業社製)
テトラメチロールメタン500gと、ジビニルベンゼン500gと、過酸化ベンゾイル20gとを混合し、均一に溶解させてモノマー混合液を得た。1重量%ポリビニルアルコール水溶液5kgを作製し、反応釜に入れた。この反応釜の中に上記モノマー混合液を更に入れ、2~4時間攪拌することで、モノマー混合液の液滴が所定の粒子径になるように、粒子径を調整した。この後85℃の窒素雰囲気下で10時間反応を行い、スペーサBを得た。得られたスペーサBを熱水にて数回洗浄した後、分級操作を行った。得られたスペーサBでは、平均粒子径は19.8μm、粒子径のCV値は3.5%であった。
ポリテトラメチレングリコールジアクリレート970gと、テトラメチロールメタンテトラアクリレート30gと、過酸化ベンゾイル39gとを混合し、均一に溶解させてモノマー混合液を得た。1重量%ポリビニルアルコール水溶液5kgを作製し、反応釜に入れた。この反応釜の中に上記モノマー混合液を更に入れ、2~4時間攪拌することで、モノマー混合液の液滴が所定の粒子径になるように、粒子径を調整した。この後85℃の窒素雰囲気下で9時間反応を行い、スペーサCを得た。得られたスペーサC熱水にて数回洗浄した後、分級操作を行った。得られたスペーサCでは、平均粒子径は20.1μm、粒子径のCV値は3.2%であった。
(シリコーン接着剤の調製)
1成分加熱硬化型シリコーン接着剤 TSE322(モメンティブパフォーマンスマテリアルズ社製)に対して、得られる接着剤中での含有量が2重量%になるようにギャップ制御粒子としてスペーサ1を添加し、遊星式攪拌機にて攪拌し、均一に分散させて、シリコーン接着剤を調製した。
上記シリコーン接着剤をシリンジに充填し、ディスペンサを用いてプリント基板上に厚さが20μmとなるように塗布した後、塗布した接着剤上に圧力センサチップを配し、150℃で10分加熱して硬化、接着し、圧力センサ構造体を得た。
シリコーン接着剤の調製の際、スペーサ2をスペーサ1の代わりに用いたこと以外は実施例1と同様にして、圧力センサ構造体を得た。
シリコーン接着剤の調製の際、スペーサ3をスペーサ1の代わりに用いたこと以外は実施例1と同様にして、圧力センサ構造体を得た。
シリコーン接着剤の調製の際、スペーサAをスペーサ1の代わりに用いたこと以外は実施例1と同様にして、圧力センサ構造体を得た。
シリコーン接着剤の調製の際、スペーサBをスペーサ1の代わりに用いたこと以外は実施例1と同様にして、圧力センサ構造体を得た。
シリコーン接着剤の調製の際、スペーサCをスペーサ1の代わりに用いたこと以外は実施例1と同様にして、圧力センサ構造体を得た。
(1)10%圧縮弾性率
フィッシャー社製「フィッシャースコープH-100」を用いて、上述した方法で、スペーサの10%圧縮弾性率を測定した。
スペーサを走査型電子顕微鏡で観察し、観察された画像における任意に選択した50個の各スペーサの最大粒子径を算術平均することにより求めた。
フィッシャー社製「フィッシャースコープH-100」を用いて、上述した方法で、スペーサの圧縮回復率を測定した。
フィッシャー社製「フィッシャースコープH-100」を用いて、スペーサを150℃、大気中で1000時間加熱した後の10%圧縮弾性率を測定した。スペーサの熱経時変化を以下の基準で判定した。
○:加熱後の10%圧縮弾性率の加熱前の10%圧縮弾性率に対する比が、0.95以上、1.05以下
△:加熱後の10%圧縮弾性率の加熱前の10%圧縮弾性率に対する比が、0.9以上、0.95未満、又は、1.05より大きく、1.10以下
×:加熱後の10%圧縮弾性率の加熱前の10%圧縮弾性率に対する比が、0.9未満、又は、1.10より大きい
得られた圧力センサ構造体の260℃でのシェア強度を測定した。シェア強度から、耐熱性:接続強度を判定した。
○○:シェア強度が150N/cm2以上
○:シェア強度が100N/cm2以上、150N/cm2未満
×:シェア強度が100N/cm2未満
得られた圧力センサ構造体を用いて、液槽式熱衝撃試験機(ESPEC社製「TSB-51」)を用いて、-40℃で5分間保持した後、120℃まで昇温し、120℃で5分間保持した後-40℃まで降温する過程を1サイクルとする冷熱サイクル試験を実施した。500サイクル後にサンプルを取り出した。
○○:接着層にクラックが生じておらず、かつ接着層が基板から剥離していない
○:接着層にわずかなクラックが生じているか、又は接着層が基板からわずかに剥離している
×:接着層に大きなクラックが生じているか、又は接着層が基板から大きく剥離している
2…スペーサ
3…第1の部材
4…第2の部材(半導体センサチップ)
5…接着層
Claims (6)
- 半導体センサチップの実装に用いられる接着剤であって、
シリコーン樹脂と、スペーサとを含み、
前記スペーサの10%圧縮弾性率が、10N/mm2以上、2000N/mm2以下であり、
前記スペーサの圧縮回復率が、20%以下であり、
前記スペーサの平均粒子径が、10μm以上、200μm以下である、半導体センサチップ実装用接着剤。 - 前記スペーサを150℃で1000時間加熱したときに、加熱後のスペーサの10%圧縮弾性率の加熱前のスペーサの10%圧縮弾性率に対する比が、0.95以上、1.05以下である、請求項1に記載の半導体センサチップ実装用接着剤。
- 前記接着剤中に含まれる前記スペーサにおいて、前記スペーサの平均粒子径に対して、平均粒子径が1.5倍以上であるスペーサが存在しないか、又は、前記スペーサの全個数100%中、前記スペーサの平均粒子径に対して、平均粒子径が1.5倍以上であるスペーサが0.1%以下の個数で存在する、請求項1又は2に記載の半導体センサチップ実装用接着剤。
- 前記スペーサが、シリコーンスペーサである、請求項1~3のいずれか1項に記載の半導体センサチップ実装用接着剤。
- 前記スペーサが、イソボルニル基を有する(メタ)アクリル化合物の重合体である、請求項1~3のいずれか1項に記載の半導体センサチップ実装用接着剤。
- 第1の部材と、
第2の部材である半導体センサチップと、
前記第1の部材と前記第2の部材とを接着している接着層とを備え、
前記接着層が、請求項1~5のいずれか1項に記載の半導体センサチップ実装用接着剤の硬化物である、半導体センサ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201780003503.6A CN108139285B (zh) | 2016-03-10 | 2017-03-10 | 半导体传感器芯片安装用粘结剂以及半导体传感器 |
EP17763449.0A EP3428600B1 (en) | 2016-03-10 | 2017-03-10 | Adhesive for semiconductor sensor chip mounting, and semiconductor sensor |
US16/082,491 US10790217B2 (en) | 2016-03-10 | 2017-03-10 | Adhesive for semiconductor sensor chip mounting, and semiconductor sensor |
JP2017516173A JP6322337B2 (ja) | 2016-03-10 | 2017-03-10 | 半導体センサチップ実装用接着剤及び半導体センサ |
KR1020187006709A KR102331523B1 (ko) | 2016-03-10 | 2017-03-10 | 반도체 센서 칩 실장용 접착제 및 반도체 센서 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016047174 | 2016-03-10 | ||
JP2016-047174 | 2016-03-10 | ||
JP2016-047173 | 2016-03-10 | ||
JP2016047173 | 2016-03-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017155117A1 true WO2017155117A1 (ja) | 2017-09-14 |
Family
ID=59790414
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2017/009816 WO2017155117A1 (ja) | 2016-03-10 | 2017-03-10 | 半導体センサチップ実装用接着剤及び半導体センサ |
PCT/JP2017/009815 WO2017155116A1 (ja) | 2016-03-10 | 2017-03-10 | 半導体実装用接着剤及び半導体センサ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2017/009815 WO2017155116A1 (ja) | 2016-03-10 | 2017-03-10 | 半導体実装用接着剤及び半導体センサ |
Country Status (7)
Country | Link |
---|---|
US (2) | US10679925B2 (ja) |
EP (2) | EP3428600B1 (ja) |
JP (4) | JP6322337B2 (ja) |
KR (3) | KR20220019061A (ja) |
CN (2) | CN108139286B (ja) |
TW (2) | TWI751142B (ja) |
WO (2) | WO2017155117A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210015805A (ko) * | 2018-05-31 | 2021-02-10 | 세키스이가가쿠 고교가부시키가이샤 | 스페이서 입자, 접착제 및 접착 구조체 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3375808B1 (en) * | 2015-11-11 | 2022-12-21 | Sekisui Chemical Co., Ltd. | Particles, particle material, connecting material, and connection structure |
WO2017155117A1 (ja) * | 2016-03-10 | 2017-09-14 | 積水化学工業株式会社 | 半導体センサチップ実装用接着剤及び半導体センサ |
EP3796373B1 (de) | 2019-09-20 | 2023-06-28 | BIOTRONIK SE & Co. KG | Platinenanordnung eines implantierbaren medizinischen geräts |
TW202128921A (zh) * | 2019-10-15 | 2021-08-01 | 日商積水化學工業股份有限公司 | 間隙材料、接著劑及顯示器裝置 |
KR102584513B1 (ko) * | 2020-12-31 | 2023-10-06 | 세메스 주식회사 | 온도 변화가 수반되는 분위기에 제공되는 기판 지지 부재의 수평 측정용 기판형 센서, 이를 이용한 수평 측정 방법 및 비일시적 컴퓨터 판독가능 매체 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10300772A (ja) * | 1997-04-24 | 1998-11-13 | Denso Corp | 半導体加速度センサ |
JPH11108782A (ja) * | 1997-10-02 | 1999-04-23 | Denso Corp | 半導体力学量センサ |
JP2012004224A (ja) * | 2010-06-15 | 2012-01-05 | Sekisui Chem Co Ltd | 電子部品接合体の製造方法及び電子部品接合体 |
JP2015075422A (ja) * | 2013-10-10 | 2015-04-20 | 株式会社デンソー | 圧力センサ |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3445641B2 (ja) | 1993-07-30 | 2003-09-08 | 株式会社デンソー | 半導体装置 |
JP3384949B2 (ja) | 1997-06-26 | 2003-03-10 | 日新製鋼株式会社 | 耐汚染性に優れた金属パネル |
CN1900195B (zh) | 1998-08-13 | 2011-06-22 | 日立化成工业株式会社 | 电路构件连接用的粘结剂、电路板及其制造方法 |
JP2003322573A (ja) * | 2002-04-30 | 2003-11-14 | Fujikura Ltd | 電子デバイスの取付構造 |
JP2005294044A (ja) * | 2004-03-31 | 2005-10-20 | Sekisui Chem Co Ltd | 導電性微粒子、及び接続構造体 |
JP4839041B2 (ja) * | 2005-08-29 | 2011-12-14 | 東レ・ダウコーニング株式会社 | 絶縁性液状ダイボンディング剤および半導体装置 |
JP4802667B2 (ja) | 2005-11-08 | 2011-10-26 | 住友金属鉱山株式会社 | エポキシ樹脂接着組成物及びそれを用いた光半導体用接着剤 |
EP2348087A1 (en) | 2005-12-26 | 2011-07-27 | Hitachi Chemical Company, Ltd. | Adhesive composition, circuit connecting material and connecting structure of circuit member |
JP4269292B2 (ja) | 2006-05-30 | 2009-05-27 | 日立金属株式会社 | 3軸加速度センサー |
KR100923901B1 (ko) * | 2006-07-20 | 2009-10-28 | 세키스이가가쿠 고교가부시키가이샤 | 전자 부품용 접착제, 반도체 칩 적층체의 제조 방법 및 반도체 장치 |
CN103205231A (zh) | 2006-07-21 | 2013-07-17 | 日立化成工业株式会社 | 电路连接材料、电路部件的连接结构及电路部件的连接方法 |
JP5108556B2 (ja) * | 2007-02-27 | 2012-12-26 | 積水化成品工業株式会社 | アクリル系樹脂粒子の製造方法及び樹脂粒子の製造方法 |
US20090050266A1 (en) * | 2007-08-21 | 2009-02-26 | Kang Yang | Crosslinked polymeric materials as filler and spacers in adhesives |
CN102206480A (zh) | 2007-10-02 | 2011-10-05 | 日立化成工业株式会社 | 连接材料作为电路连接材料的应用 |
JP5118956B2 (ja) * | 2007-12-26 | 2013-01-16 | 積水化学工業株式会社 | 電子部品用接着剤 |
US20110127068A1 (en) * | 2008-07-31 | 2011-06-02 | Takuya Wada | Polymer particle, conductive particle, anisotropic conductive material and connection structure |
JP5287763B2 (ja) | 2010-02-24 | 2013-09-11 | 株式会社デンソー | センサ装置およびその製造方法 |
JP2011198953A (ja) * | 2010-03-18 | 2011-10-06 | Sekisui Chem Co Ltd | 電子部品積層体の製造方法 |
JP2010237686A (ja) * | 2010-05-21 | 2010-10-21 | Sekisui Chem Co Ltd | 液晶表示装置の製造方法 |
JP2012060020A (ja) * | 2010-09-10 | 2012-03-22 | Sekisui Chem Co Ltd | 半導体チップ実装体の製造方法及び半導体装置 |
KR101374365B1 (ko) | 2010-12-27 | 2014-03-17 | 제일모직주식회사 | 반도체용 접착 조성물 및 이를 포함하는 접착 필름 |
JP5583714B2 (ja) * | 2011-04-01 | 2014-09-03 | 株式会社日本触媒 | 導電性微粒子及びそれを用いた異方性導電材料 |
JP5689975B2 (ja) * | 2011-09-27 | 2015-03-25 | 積水化成品工業株式会社 | 樹脂組成物層用スペーサー粒子およびその用途 |
US20140120356A1 (en) * | 2012-06-18 | 2014-05-01 | Ormet Circuits, Inc. | Conductive film adhesive |
US9607086B2 (en) * | 2014-03-27 | 2017-03-28 | Mcafee, Inc. | Providing prevalence information using query data |
WO2017155117A1 (ja) * | 2016-03-10 | 2017-09-14 | 積水化学工業株式会社 | 半導体センサチップ実装用接着剤及び半導体センサ |
-
2017
- 2017-03-10 WO PCT/JP2017/009816 patent/WO2017155117A1/ja active Application Filing
- 2017-03-10 CN CN201780003507.4A patent/CN108139286B/zh active Active
- 2017-03-10 TW TW106108073A patent/TWI751142B/zh active
- 2017-03-10 JP JP2017516173A patent/JP6322337B2/ja active Active
- 2017-03-10 CN CN201780003503.6A patent/CN108139285B/zh active Active
- 2017-03-10 WO PCT/JP2017/009815 patent/WO2017155116A1/ja active Application Filing
- 2017-03-10 KR KR1020227002671A patent/KR20220019061A/ko not_active Application Discontinuation
- 2017-03-10 KR KR1020187006709A patent/KR102331523B1/ko active IP Right Grant
- 2017-03-10 TW TW106108074A patent/TWI725131B/zh active
- 2017-03-10 JP JP2017516172A patent/JP6322336B2/ja active Active
- 2017-03-10 KR KR1020187006708A patent/KR102356926B1/ko active IP Right Grant
- 2017-03-10 US US16/082,430 patent/US10679925B2/en active Active
- 2017-03-10 US US16/082,491 patent/US10790217B2/en active Active
- 2017-03-10 EP EP17763449.0A patent/EP3428600B1/en active Active
- 2017-03-10 EP EP17763448.2A patent/EP3428599B1/en active Active
-
2018
- 2018-04-05 JP JP2018073139A patent/JP6971192B2/ja active Active
- 2018-04-05 JP JP2018073140A patent/JP2018135525A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10300772A (ja) * | 1997-04-24 | 1998-11-13 | Denso Corp | 半導体加速度センサ |
JPH11108782A (ja) * | 1997-10-02 | 1999-04-23 | Denso Corp | 半導体力学量センサ |
JP2012004224A (ja) * | 2010-06-15 | 2012-01-05 | Sekisui Chem Co Ltd | 電子部品接合体の製造方法及び電子部品接合体 |
JP2015075422A (ja) * | 2013-10-10 | 2015-04-20 | 株式会社デンソー | 圧力センサ |
Non-Patent Citations (1)
Title |
---|
See also references of EP3428600A4 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210015805A (ko) * | 2018-05-31 | 2021-02-10 | 세키스이가가쿠 고교가부시키가이샤 | 스페이서 입자, 접착제 및 접착 구조체 |
KR102599329B1 (ko) | 2018-05-31 | 2023-11-07 | 세키스이가가쿠 고교가부시키가이샤 | 스페이서 입자, 접착제 및 접착 구조체 |
Also Published As
Publication number | Publication date |
---|---|
JP2018142709A (ja) | 2018-09-13 |
KR102356926B1 (ko) | 2022-01-28 |
KR20180118102A (ko) | 2018-10-30 |
US10790217B2 (en) | 2020-09-29 |
CN108139286A (zh) | 2018-06-08 |
JP6322336B2 (ja) | 2018-05-09 |
TW201800545A (zh) | 2018-01-01 |
CN108139285A (zh) | 2018-06-08 |
US10679925B2 (en) | 2020-06-09 |
US20190078002A1 (en) | 2019-03-14 |
JPWO2017155117A1 (ja) | 2018-03-15 |
CN108139286B (zh) | 2021-06-25 |
EP3428600B1 (en) | 2023-05-24 |
EP3428599A1 (en) | 2019-01-16 |
WO2017155116A1 (ja) | 2017-09-14 |
CN108139285B (zh) | 2021-06-04 |
TWI725131B (zh) | 2021-04-21 |
KR20180117589A (ko) | 2018-10-29 |
US20190088573A1 (en) | 2019-03-21 |
EP3428599A4 (en) | 2019-09-25 |
JPWO2017155116A1 (ja) | 2018-03-15 |
JP6322337B2 (ja) | 2018-05-09 |
KR102331523B1 (ko) | 2021-11-26 |
EP3428600A4 (en) | 2019-09-25 |
JP2018135525A (ja) | 2018-08-30 |
TWI751142B (zh) | 2022-01-01 |
TW201800546A (zh) | 2018-01-01 |
EP3428599B1 (en) | 2023-06-07 |
KR20220019061A (ko) | 2022-02-15 |
JP6971192B2 (ja) | 2021-11-24 |
EP3428600A1 (en) | 2019-01-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6322337B2 (ja) | 半導体センサチップ実装用接着剤及び半導体センサ | |
JP6641164B2 (ja) | 基材粒子、導電性粒子、導電材料及び接続構造体 | |
KR20130018561A (ko) | 무기 산화물 입자 함유 실리콘 수지 시트 | |
WO2021075485A1 (ja) | ギャップ材、接着剤及びディスプレイ装置 | |
WO2021075483A1 (ja) | オプティカルボンディング用粒子、接着剤及びディスプレイ装置 | |
JP6947631B2 (ja) | 接合用組成物、光学用接着剤及び圧力センサー用接着剤 | |
JP7506531B2 (ja) | 粒子、導電性粒子、導電材料及び接続構造体 | |
TW201843214A (zh) | 樹脂粒子、連接材料及連接構造體 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2017516173 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20187006709 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2017763449 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 2017763449 Country of ref document: EP Effective date: 20181010 |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 17763449 Country of ref document: EP Kind code of ref document: A1 |